JP5118811B2 - 発光装置及び表示装置 - Google Patents
発光装置及び表示装置 Download PDFInfo
- Publication number
- JP5118811B2 JP5118811B2 JP2005325367A JP2005325367A JP5118811B2 JP 5118811 B2 JP5118811 B2 JP 5118811B2 JP 2005325367 A JP2005325367 A JP 2005325367A JP 2005325367 A JP2005325367 A JP 2005325367A JP 5118811 B2 JP5118811 B2 JP 5118811B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- light emitting
- oxide
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/142—Inert intermediate layers
- G03G5/144—Inert intermediate layers comprising inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Shift Register Type Memory (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005325367A JP5118811B2 (ja) | 2004-11-10 | 2005-11-09 | 発光装置及び表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004326684 | 2004-11-10 | ||
| JP2004326684 | 2004-11-10 | ||
| JP2005325367A JP5118811B2 (ja) | 2004-11-10 | 2005-11-09 | 発光装置及び表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006186319A JP2006186319A (ja) | 2006-07-13 |
| JP2006186319A5 JP2006186319A5 (enExample) | 2008-12-25 |
| JP5118811B2 true JP5118811B2 (ja) | 2013-01-16 |
Family
ID=35841859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005325367A Expired - Lifetime JP5118811B2 (ja) | 2004-11-10 | 2005-11-09 | 発光装置及び表示装置 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7872259B2 (enExample) |
| EP (1) | EP1810335B1 (enExample) |
| JP (1) | JP5118811B2 (enExample) |
| KR (2) | KR20070085879A (enExample) |
| CN (1) | CN101057333B (enExample) |
| AU (1) | AU2005302963B2 (enExample) |
| CA (1) | CA2585063C (enExample) |
| RU (1) | RU2358354C2 (enExample) |
| WO (1) | WO2006051994A2 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3125296A1 (en) | 2015-07-30 | 2017-02-01 | Ricoh Company, Ltd. | Field-effect transistor, display element, image display device, and system |
| US10170635B2 (en) | 2015-12-09 | 2019-01-01 | Ricoh Company, Ltd. | Semiconductor device, display device, display apparatus, and system |
| US10586873B2 (en) | 2016-03-18 | 2020-03-10 | Ricoh Company, Ltd. | Method for producing field-effect transistor |
| US10672914B2 (en) | 2013-07-31 | 2020-06-02 | Ricoh Company, Ltd. | Field-effect transistor and method for producing field-effect transistor |
Families Citing this family (1895)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| CA2585190A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| KR20070085879A (ko) | 2004-11-10 | 2007-08-27 | 캐논 가부시끼가이샤 | 발광 장치 |
| US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
| US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| TWI472037B (zh) * | 2005-01-28 | 2015-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7928938B2 (en) * | 2005-04-19 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including memory circuit, display device and electronic apparatus |
| US7710739B2 (en) | 2005-04-28 | 2010-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| US8629819B2 (en) | 2005-07-14 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| EP1758072A3 (en) * | 2005-08-24 | 2007-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
| JP4732080B2 (ja) * | 2005-09-06 | 2011-07-27 | キヤノン株式会社 | 発光素子 |
| KR100729043B1 (ko) * | 2005-09-14 | 2007-06-14 | 삼성에스디아이 주식회사 | 투명 박막 트랜지스터 및 그의 제조방법 |
| EP1764770A3 (en) * | 2005-09-16 | 2012-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of display device |
| JP5006598B2 (ja) * | 2005-09-16 | 2012-08-22 | キヤノン株式会社 | 電界効果型トランジスタ |
| WO2007034935A1 (en) * | 2005-09-21 | 2007-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Cyclic redundancy check circuit and semiconductor device having the cyclic redundancy check circuit |
| EP1998373A3 (en) * | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| WO2007043493A1 (en) | 2005-10-14 | 2007-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5037808B2 (ja) * | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| WO2007058329A1 (en) * | 2005-11-15 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5016831B2 (ja) * | 2006-03-17 | 2012-09-05 | キヤノン株式会社 | 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置 |
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| TWI358964B (en) * | 2006-04-12 | 2012-02-21 | Au Optronics Corp | Electroluminescence display element and method for |
| JP2007286150A (ja) * | 2006-04-13 | 2007-11-01 | Idemitsu Kosan Co Ltd | 電気光学装置、並びに、電流制御用ｔｆｔ基板及びその製造方法 |
| KR100785038B1 (ko) * | 2006-04-17 | 2007-12-12 | 삼성전자주식회사 | 비정질 ＺｎＯ계 ＴＦＴ |
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| US7742673B2 (en) | 2007-09-28 | 2010-06-22 | General Electric Company | Thermal mangement article having thermal wave guide |
| US7982216B2 (en) | 2007-11-15 | 2011-07-19 | Fujifilm Corporation | Thin film field effect transistor with amorphous oxide active layer and display using the same |
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| US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
| CA2585190A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| KR20070085879A (ko) * | 2004-11-10 | 2007-08-27 | 캐논 가부시끼가이샤 | 발광 장치 |
| US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| JP2007264214A (ja) * | 2006-03-28 | 2007-10-11 | Fuji Xerox Co Ltd | 電子写真感光体、プロセスカートリッジ、画像形成装置、及びコーティング剤組成物 |
-
2005
- 2005-11-09 KR KR1020077012875A patent/KR20070085879A/ko not_active Ceased
- 2005-11-09 RU RU2007121701/28A patent/RU2358354C2/ru active
- 2005-11-09 CN CN2005800383031A patent/CN101057333B/zh not_active Expired - Lifetime
- 2005-11-09 KR KR1020097016244A patent/KR100953596B1/ko not_active Expired - Lifetime
- 2005-11-09 US US11/269,768 patent/US7872259B2/en active Active
- 2005-11-09 CA CA2585063A patent/CA2585063C/en not_active Expired - Lifetime
- 2005-11-09 AU AU2005302963A patent/AU2005302963B2/en not_active Expired
- 2005-11-09 JP JP2005325367A patent/JP5118811B2/ja not_active Expired - Lifetime
- 2005-11-09 WO PCT/JP2005/020981 patent/WO2006051994A2/en not_active Ceased
- 2005-11-09 EP EP05806767.9A patent/EP1810335B1/en not_active Expired - Lifetime
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10672914B2 (en) | 2013-07-31 | 2020-06-02 | Ricoh Company, Ltd. | Field-effect transistor and method for producing field-effect transistor |
| EP3125296A1 (en) | 2015-07-30 | 2017-02-01 | Ricoh Company, Ltd. | Field-effect transistor, display element, image display device, and system |
| US10115828B2 (en) | 2015-07-30 | 2018-10-30 | Ricoh Company, Ltd. | Field-effect transistor, display element, image display device, and system |
| US10170635B2 (en) | 2015-12-09 | 2019-01-01 | Ricoh Company, Ltd. | Semiconductor device, display device, display apparatus, and system |
| US10403765B2 (en) | 2015-12-09 | 2019-09-03 | Ricoh Company, Ltd. | Semiconductor device, display device, display apparatus, and system |
| US10586873B2 (en) | 2016-03-18 | 2020-03-10 | Ricoh Company, Ltd. | Method for producing field-effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006186319A (ja) | 2006-07-13 |
| AU2005302963A1 (en) | 2006-05-18 |
| KR20090106591A (ko) | 2009-10-09 |
| CA2585063C (en) | 2013-01-15 |
| US20110017996A1 (en) | 2011-01-27 |
| US8212252B2 (en) | 2012-07-03 |
| EP1810335B1 (en) | 2020-05-27 |
| EP1810335A2 (en) | 2007-07-25 |
| KR20070085879A (ko) | 2007-08-27 |
| KR100953596B1 (ko) | 2010-04-21 |
| CN101057333A (zh) | 2007-10-17 |
| US20060113549A1 (en) | 2006-06-01 |
| RU2358354C2 (ru) | 2009-06-10 |
| WO2006051994A2 (en) | 2006-05-18 |
| CA2585063A1 (en) | 2006-05-18 |
| WO2006051994A3 (en) | 2006-07-06 |
| CN101057333B (zh) | 2011-11-16 |
| BRPI0517562A (pt) | 2008-10-14 |
| US7872259B2 (en) | 2011-01-18 |
| AU2005302963B2 (en) | 2009-07-02 |
| RU2007121701A (ru) | 2008-12-20 |
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