JP5401570B2 - 画像表示装置 - Google Patents

画像表示装置 Download PDF

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Publication number
JP5401570B2
JP5401570B2 JP2012053401A JP2012053401A JP5401570B2 JP 5401570 B2 JP5401570 B2 JP 5401570B2 JP 2012053401 A JP2012053401 A JP 2012053401A JP 2012053401 A JP2012053401 A JP 2012053401A JP 5401570 B2 JP5401570 B2 JP 5401570B2
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JP
Japan
Prior art keywords
film
amorphous oxide
image display
tft
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2012053401A
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English (en)
Japanese (ja)
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JP2012151485A (ja
JP2012151485A5 (enExample
Inventor
日出也 雲見
秀雄 細野
利夫 神谷
研二 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Tokyo Institute of Technology NUC
Original Assignee
Canon Inc
Tokyo Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Canon Inc, Tokyo Institute of Technology NUC filed Critical Canon Inc
Priority to JP2012053401A priority Critical patent/JP5401570B2/ja
Publication of JP2012151485A publication Critical patent/JP2012151485A/ja
Publication of JP2012151485A5 publication Critical patent/JP2012151485A5/ja
Application granted granted Critical
Publication of JP5401570B2 publication Critical patent/JP5401570B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2012053401A 2004-11-10 2012-03-09 画像表示装置 Expired - Lifetime JP5401570B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012053401A JP5401570B2 (ja) 2004-11-10 2012-03-09 画像表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004326682 2004-11-10
JP2004326682 2004-11-10
JP2012053401A JP5401570B2 (ja) 2004-11-10 2012-03-09 画像表示装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005325365A Division JP5126729B2 (ja) 2004-11-10 2005-11-09 画像表示装置

Publications (3)

Publication Number Publication Date
JP2012151485A JP2012151485A (ja) 2012-08-09
JP2012151485A5 JP2012151485A5 (enExample) 2012-11-29
JP5401570B2 true JP5401570B2 (ja) 2014-01-29

Family

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Family Applications (1)

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JP2012053401A Expired - Lifetime JP5401570B2 (ja) 2004-11-10 2012-03-09 画像表示装置

Country Status (2)

Country Link
US (2) US7791072B2 (enExample)
JP (1) JP5401570B2 (enExample)

Families Citing this family (1881)

* Cited by examiner, † Cited by third party
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