JP5708124B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5708124B2 JP5708124B2 JP2011068214A JP2011068214A JP5708124B2 JP 5708124 B2 JP5708124 B2 JP 5708124B2 JP 2011068214 A JP2011068214 A JP 2011068214A JP 2011068214 A JP2011068214 A JP 2011068214A JP 5708124 B2 JP5708124 B2 JP 5708124B2
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- semiconductor device
- protective film
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- 239000004065 semiconductor Substances 0.000 title claims description 32
- 230000001681 protective effect Effects 0.000 claims description 22
- 239000011229 interlayer Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 27
- 229910052782 aluminium Inorganic materials 0.000 description 27
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
図1は、本発明の実施の形態1に係る半導体装置を示す上面図である。ワイヤボンディングされるゲートパッド1、エミッタパッド2、カレント温度センサ(不図示)に接続されたセンスパッド3がチップ上に設けられている。これらのパッド以外の領域は保護膜4で覆われている。
図8は、本発明の実施の形態2に係る半導体装置を示す上面図である。図9は図8のC−C´に沿った断面図である。Si基板10上にゲート抵抗7a,7bが設けられている。ゲート抵抗7a,7bを層間絶縁膜12が覆っている。層間絶縁膜12上にアルミ配線5a,5bが設けられている。アルミ配線5a,5bは、互いに分離し、コンタクト電極6を介してゲート抵抗7a,7bにそれぞれ接続されている。アルミ配線5a,5bを半絶縁性の保護膜4が覆っている。
図11は、本発明の実施の形態3に係る半導体装置を示す上面図である。アルミ配線5aは、保護膜4から露出されたゲートパッド1を有する。トレンチ配線13は、このゲートパッド1の下を通る。これにより、素子面積を小さくすることができる。その他の構成は実施の形態2と同様であり、実施の形態2と同様の効果を得ることもできる。
4 保護膜
5a アルミ配線(第1の上配線)
5b アルミ配線(第2の上配線)
7 ゲート抵抗(下配線)
7a ゲート抵抗(第1の下配線)
7b ゲート抵抗(第2の下配線)
10 Si基板(基板)
12 層間絶縁膜
13 トレンチ配線
Claims (6)
- 基板と、
前記基板上に設けられた下配線と、
前記下配線を覆う層間絶縁膜と、
前記層間絶縁膜上に設けられ、互いに分離した第1及び第2の上配線と、
前記第1及び第2の上配線を覆う半絶縁性の保護膜とを備え、
前記下配線の直上であって前記第1の上配線と前記第2の上配線との間の領域に前記半絶縁性の保護膜が設けられていないことを特徴とする半導体装置。 - 前記下配線の直上の全領域に前記半絶縁性の保護膜が設けられていないことを特徴とする請求項1に記載の半導体装置。
- 基板と、
前記基板上に設けられた第1及び第2の下配線と、
前記第1及び第2の下配線を覆う層間絶縁膜と、
前記層間絶縁膜上に設けられ、互いに分離した第1及び第2の上配線と、
前記第1の上配線と前記第2の上配線との間の領域の直下において前記基板に設けられ、前記第1の下配線と前記第2の下配線を接続するトレンチ配線と、
前記第1及び第2の上配線を覆う半絶縁性の保護膜とを備え、
前記第1の上配線は、前記保護膜から露出されたワイヤボンディング領域を有し、
前記トレンチ配線は前記ワイヤボンディング領域の下を通ることを特徴とする半導体装置。 - 前記トレンチ配線は前記ワイヤボンディング領域の角部の下を通ることを特徴とする請求項3に記載の半導体装置。
- 前記トレンチ配線は前記ワイヤボンディング領域の前記角部に対して斜めに配置されていることを特徴とする請求項4に記載の半導体装置。
- 前記トレンチ配線はメッシュ状に配線されていることを特徴とする請求項3〜5の何れか1項に記載の半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011068214A JP5708124B2 (ja) | 2011-03-25 | 2011-03-25 | 半導体装置 |
US13/237,516 US8872346B2 (en) | 2011-03-25 | 2011-09-20 | Semiconductor device |
DE102011122927.6A DE102011122927B3 (de) | 2011-03-25 | 2011-12-29 | Halbleitervorrichtung |
DE102011090118.3A DE102011090118B4 (de) | 2011-03-25 | 2011-12-29 | Halbleitervorrichtung |
KR1020120015657A KR101329612B1 (ko) | 2011-03-25 | 2012-02-16 | 반도체장치 |
CN201210045372.7A CN102693964B (zh) | 2011-03-25 | 2012-02-27 | 半导体装置 |
US14/447,045 US9054039B2 (en) | 2011-03-25 | 2014-07-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011068214A JP5708124B2 (ja) | 2011-03-25 | 2011-03-25 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012204634A JP2012204634A (ja) | 2012-10-22 |
JP5708124B2 true JP5708124B2 (ja) | 2015-04-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011068214A Active JP5708124B2 (ja) | 2011-03-25 | 2011-03-25 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8872346B2 (ja) |
JP (1) | JP5708124B2 (ja) |
KR (1) | KR101329612B1 (ja) |
CN (1) | CN102693964B (ja) |
DE (2) | DE102011122927B3 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130116782A (ko) | 2012-04-16 | 2013-10-24 | 한국전자통신연구원 | 계층적 비디오 부호화에서의 계층정보 표현방식 |
JP5765324B2 (ja) * | 2012-12-10 | 2015-08-19 | トヨタ自動車株式会社 | 半導体装置 |
JP6080961B2 (ja) * | 2013-09-05 | 2017-02-15 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
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USH665H (en) | 1987-10-19 | 1989-08-01 | Bell Telephone Laboratories, Incorporated | Resistive field shields for high voltage devices |
JP3139783B2 (ja) | 1991-08-22 | 2001-03-05 | 株式会社東芝 | 半導体集積回路装置 |
JP3275536B2 (ja) * | 1994-05-31 | 2002-04-15 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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JPH1026744A (ja) | 1996-07-10 | 1998-01-27 | Koji Matsui | 前掛式眼鏡 |
JPH1032203A (ja) * | 1996-07-17 | 1998-02-03 | Toshiba Corp | 半導体装置の製造方法 |
JPH10242301A (ja) * | 1997-02-21 | 1998-09-11 | Nec Corp | 半導体記憶装置およびその製造方法 |
JP4167313B2 (ja) * | 1997-03-18 | 2008-10-15 | 株式会社東芝 | 高耐圧電力用半導体装置 |
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JP3132422B2 (ja) * | 1997-06-09 | 2001-02-05 | 日本電気株式会社 | 半導体装置の製造方法 |
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-
2011
- 2011-03-25 JP JP2011068214A patent/JP5708124B2/ja active Active
- 2011-09-20 US US13/237,516 patent/US8872346B2/en active Active
- 2011-12-29 DE DE102011122927.6A patent/DE102011122927B3/de active Active
- 2011-12-29 DE DE102011090118.3A patent/DE102011090118B4/de active Active
-
2012
- 2012-02-16 KR KR1020120015657A patent/KR101329612B1/ko active IP Right Grant
- 2012-02-27 CN CN201210045372.7A patent/CN102693964B/zh active Active
-
2014
- 2014-07-30 US US14/447,045 patent/US9054039B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE102011122927B3 (de) | 2020-07-30 |
CN102693964A (zh) | 2012-09-26 |
DE102011090118A1 (de) | 2012-09-27 |
KR101329612B1 (ko) | 2013-11-15 |
US20140339674A1 (en) | 2014-11-20 |
KR20120108925A (ko) | 2012-10-05 |
US8872346B2 (en) | 2014-10-28 |
US9054039B2 (en) | 2015-06-09 |
CN102693964B (zh) | 2015-11-18 |
DE102011090118B4 (de) | 2018-06-07 |
US20120241974A1 (en) | 2012-09-27 |
JP2012204634A (ja) | 2012-10-22 |
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