JPWO2006046302A1 - 半導体装置及びその製造方法 - Google Patents
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Abstract
Description
Claims (12)
- 隣接して設けられたボンディングパッド部と配線部とを備え、前記ボンディングパッドの前記配線部側の領域には、該ボンディングパッドの外周縁と実質的に同方向に延在する空隙領域が設けられている半導体装置。
- 前記ボンディングパッドの前記配線部側の領域には前記空隙領域が少なくとも3つ設けられており、該空隙領域が複数列で配置されている請求項1に記載の半導体装置。
- 前記配線部と前記ボンディングパッドの一部領域が単一の保護膜で被覆されており、前記一部領域に設けられた空隙領域には前記保護膜の一部が充填されている請求項1または2に記載の半導体装置。
- 前記ボンディングパッドの内側領域にはボンディングワイヤ接続用の開口窓が設けられており、前記少なくとも3つの空隙領域の何れかが前記開口窓の形成領域に設けられている請求項2または3に記載の半導体装置。
- 前記保護膜は、相対的に軟性の第1の絶縁膜と相対的に硬性の第2の絶縁膜を順次積層させた多層膜であり、前記空隙領域への充填物は前記第1の絶縁膜の一部である請求項3または4に記載の半導体装置。
- 前記第1の絶縁膜はSOG膜であり、前記第2の絶縁膜はシリコン窒化膜である請求項5に記載の半導体装置。
- 前記空隙領域を取り囲む前記ボンディングパッドの側壁にはサイドウォールが設けられている請求項1乃至6の何れかに記載の半導体装置。
- 前記サイドウォールは、TiまたはTiを含む合金で形成されている請求項7に記載の半導体装置。
- 前記ボンディングパッド部と配線部とは、埋め込み配線パターンを被覆するように形成されたシリコン酸化膜上に設けられている請求項1乃至8の何れかに記載の半導体装置。
- 絶縁層上に導電層を形成し、
該導電層をボンディングパッド部と配線部とにパターニングし、前記ボンディングパッドのパターニングにより、前記ボンディングパッドの前記配線部側の領域には、前記ボンディングパッドの外周縁と実質的に同方向に延在する空隙領域を形成する半導体装置の製造方法。 - 前記ボンディングパッドの内側領域にボンディングワイヤ接続用の開口窓を形成する請求項10記載の製造方法。
- 絶縁層によって覆われる埋め込み配線パターンを形成し、
前記絶縁層上に導電層を形成し、
該導電層をボンディングパッド部と配線部とにパターニングし、前記ボンディングパッドのパターニングにより、前記ボンディングパッドの前記配線部側の領域には、前記ボンディングパッドの外周縁と実質的に同方向に延在する空隙領域を形成する半導体装置の製造方法。
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PCT/JP2004/016120 WO2006046302A1 (ja) | 2004-10-29 | 2004-10-29 | 半導体装置及びその製造方法 |
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JPWO2006046302A1 true JPWO2006046302A1 (ja) | 2008-05-22 |
JP4777899B2 JP4777899B2 (ja) | 2011-09-21 |
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JP2006542179A Expired - Fee Related JP4777899B2 (ja) | 2004-10-29 | 2004-10-29 | 半導体装置 |
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US (1) | US20060091537A1 (ja) |
JP (1) | JP4777899B2 (ja) |
CN (1) | CN100530577C (ja) |
DE (1) | DE112004003008T5 (ja) |
GB (1) | GB2434917B (ja) |
TW (1) | TWI405300B (ja) |
WO (1) | WO2006046302A1 (ja) |
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JP5192163B2 (ja) * | 2007-03-23 | 2013-05-08 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
JP5452064B2 (ja) * | 2009-04-16 | 2014-03-26 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US8836150B2 (en) * | 2010-11-29 | 2014-09-16 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
JP5926988B2 (ja) | 2012-03-08 | 2016-05-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9331019B2 (en) | 2012-11-29 | 2016-05-03 | Infineon Technologies Ag | Device comprising a ductile layer and method of making the same |
JP2016092061A (ja) * | 2014-10-30 | 2016-05-23 | 株式会社東芝 | 半導体装置および固体撮像装置 |
US9484307B2 (en) * | 2015-01-26 | 2016-11-01 | Advanced Semiconductor Engineering, Inc. | Fan-out wafer level packaging structure |
JP2020155659A (ja) * | 2019-03-22 | 2020-09-24 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および半導体装置の製造方法 |
CN111638625B (zh) * | 2020-06-04 | 2023-03-14 | 厦门通富微电子有限公司 | 一种掩膜版、制备半导体器件的方法和半导体器件 |
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JPS63141330A (ja) * | 1986-12-03 | 1988-06-13 | Nec Corp | 半導体集積回路装置 |
JP2000012604A (ja) * | 1998-06-22 | 2000-01-14 | Toshiba Corp | 半導体装置およびその製造方法 |
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US5565378A (en) * | 1992-02-17 | 1996-10-15 | Mitsubishi Denki Kabushiki Kaisha | Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution |
KR0170316B1 (ko) * | 1995-07-13 | 1999-02-01 | 김광호 | 반도체 장치의 패드 설계 방법 |
US6165886A (en) * | 1998-11-17 | 2000-12-26 | Winbond Electronics Corp. | Advanced IC bonding pad design for preventing stress induced passivation cracking and pad delimitation through stress bumper pattern and dielectric pin-on effect |
JP3383236B2 (ja) * | 1998-12-01 | 2003-03-04 | 株式会社日立製作所 | エッチング終点判定方法及びエッチング終点判定装置 |
US6355576B1 (en) * | 1999-04-26 | 2002-03-12 | Vlsi Technology Inc. | Method for cleaning integrated circuit bonding pads |
US6803302B2 (en) * | 1999-11-22 | 2004-10-12 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device having a mechanically robust pad interface |
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2004
- 2004-10-29 JP JP2006542179A patent/JP4777899B2/ja not_active Expired - Fee Related
- 2004-10-29 CN CNB2004800447503A patent/CN100530577C/zh not_active Expired - Fee Related
- 2004-10-29 DE DE112004003008T patent/DE112004003008T5/de not_active Ceased
- 2004-10-29 GB GB0709053A patent/GB2434917B/en not_active Expired - Fee Related
- 2004-10-29 WO PCT/JP2004/016120 patent/WO2006046302A1/ja active Application Filing
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2005
- 2005-10-20 TW TW094136656A patent/TWI405300B/zh active
- 2005-10-24 US US11/257,825 patent/US20060091537A1/en not_active Abandoned
Patent Citations (2)
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JPS63141330A (ja) * | 1986-12-03 | 1988-06-13 | Nec Corp | 半導体集積回路装置 |
JP2000012604A (ja) * | 1998-06-22 | 2000-01-14 | Toshiba Corp | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
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US20060091537A1 (en) | 2006-05-04 |
GB0709053D0 (en) | 2007-06-20 |
TW200620547A (en) | 2006-06-16 |
DE112004003008T5 (de) | 2007-10-25 |
JP4777899B2 (ja) | 2011-09-21 |
GB2434917B (en) | 2010-05-26 |
CN101091240A (zh) | 2007-12-19 |
TWI405300B (zh) | 2013-08-11 |
CN100530577C (zh) | 2009-08-19 |
WO2006046302A1 (ja) | 2006-05-04 |
GB2434917A (en) | 2007-08-08 |
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