JP6080961B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6080961B2 JP6080961B2 JP2015535344A JP2015535344A JP6080961B2 JP 6080961 B2 JP6080961 B2 JP 6080961B2 JP 2015535344 A JP2015535344 A JP 2015535344A JP 2015535344 A JP2015535344 A JP 2015535344A JP 6080961 B2 JP6080961 B2 JP 6080961B2
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- film
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Classifications
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Description
<構成>
図1に本実施の形態に係る半導体装置の断面図を示す。本実施の形態では、半導体装置に備わる半導体素子はワイドバンドギャップ半導体を含む。より具体的には、半導体素子として、n型の炭化珪素ショットキーバリアダイオードを用いた場合を一例として説明する。
次に、図1に示した、炭化珪素ショットキーバリアダイオードを半導体素子とする半導体装置の製造方法について説明する。図10〜図18は、半導体装置の製造過程を示す断面図である。なお、図10〜図18においても、図1と同様に半導体装置の左側半分の断面のみを示している。
本実施の形態における半導体装置は、200℃以上で使用する半導体素子と、半導体素子と電気的に接続されたCu配線電極17と、半導体素子およびCu配線電極17を被覆する有機樹脂膜10と、Cu配線電極17と有機樹脂膜10との界面に設けられ、無機膜からなる拡散防止膜11と、を備える。
図19に本実施の形態における半導体装置の断面図を示す。本実施の形態は、実施の形態1の半導体装置に対して、金属層7を設けない構成である。その他の構成は実施の形態1(図1)と同じため、説明を省略する。
図20は、本実施の形態における半導体装置の断面図である。本実施の形態の半導体装置は、半導体チップ22として、実施の形態1(図1)に示した半導体装置を含む。本実施の形態の半導体装置は、半導体チップ22と、絶縁セラミックス24と、複数の銅板21,23,25と、冷却器27と、樹脂28とを備える。
Claims (9)
- 200℃以上で使用する炭化珪素半導体素子と、
前記炭化珪素半導体素子と電気的に接続された、厚みが6μm以上のCu配線電極(17)と、
前記炭化珪素半導体素子および前記Cu配線電極(17)を被覆する有機樹脂膜(10)と、
前記Cu配線電極(17)と前記有機樹脂膜(10)との界面に設けられ、SiN無機膜からなる拡散防止膜(11)と、
を備え、
前記有機樹脂膜(10)はポリイミドであり、
前記拡散防止膜(11)は、前記Cu配線電極(17)と前記有機樹脂膜(10)との界面全面に設けられ、
前記Cu配線電極(17)の裾部において前記拡散防止膜(11)の厚みは100nm以上であることを特徴とする、
半導体装置。 - 前記半導体素子と前記Cu配線電極(17)との間にバリアメタル層をさらに備え、
前記バリアメタル層は前記有機樹脂膜(10)に被覆され、
前記バリアメタル層と前記有機樹脂膜(10)との界面には前記拡散防止膜(11)が設けられ、
前記バリアメタル層の厚みは10nm以上200nm以下であることを特徴とする、
請求項1に記載の半導体装置。 - 前記拡散防止膜(11)の組成比N/Siは0.8以上1.6以下である、
請求項1に記載の半導体装置。 - 前記拡散防止膜(11)の屈折率は1.7以上2.4以下である、
請求項1に記載の半導体装置。 - 前記拡散防止膜(11)の屈折率は2.4以上2.7以下であり、当該拡散防止膜は半絶縁性の膜である、
請求項1に記載の半導体装置。 - 前記拡散防止膜(11)は、Si3N4、Si2N4のうち、少なくとも1つを含む、
請求項1に記載の半導体装置。 - 当該有機樹脂膜(10)の厚みは3μm以上100μm以下であることを特徴とする、
請求項1から請求項6のいずれか一項に記載の半導体装置。 - 半導体装置の製造方法であって、
前記半導体装置は200℃以上で使用され、
(a)炭化珪素の下地を準備する工程と、
(b)前記下地上に電極を形成する工程と、
(c)前記電極上にバリアメタル層を形成する工程と、
(d)前記バリアメタル層の上面側にめっき法により6μm以上の厚みでCu配線電極(17)を形成する工程と、
(e)前記下地上面、前記電極、前記バリアメタル層および前記Cu配線電極(17)の露出面を、SiN無機膜からなる拡散防止膜(11)で被覆する工程と、
(f)前記工程(e)の後、前記拡散防止膜(11)の一部を除去して前記Cu配線電極(17)上面の一部を露出させる工程と、
(g)前記工程(f)の後、前記拡散防止膜(11)および露出している前記Cu配線電極(17)上面をポリイミドからなる有機樹脂膜(10)で被覆する工程と、
(h)前記工程(g)の後、前記Cu配線電極(17)と前記有機樹脂膜(10)とが接触しないように前記有機樹脂膜(10)の一部を除去して前記Cu配線電極(17)上面の一部を露出させる工程と、
を備え、
前記工程(e)において、前記Cu配線電極(17)の裾部は前記拡散防止膜(11)で被覆され、当該裾部において前記拡散防止膜(11)を100nm以上の膜厚で形成することを特徴とする、
半導体装置の製造方法。 - 半導体装置の製造方法であって、
前記半導体装置は200℃以上で使用され、
(i)炭化珪素の下地を準備する工程と、
(j)前記下地上に電極を形成する工程と、
(k)前記電極上にバリアメタル層を形成する工程と、
(l)前記バリアメタル層の上面側にめっき法により6μm以上の厚みでCu配線電極(17)を形成する工程と、
(m)前記下地上面、前記電極、前記バリアメタル層および前記Cu配線電極(17)の露出面を、SiN無機膜からなる拡散防止膜(11)で被覆する工程と、
(o)前記拡散防止膜(11)をポリイミドからなる有機樹脂膜(10)で被覆する工程と、
(p)前記工程(o)の後、前記Cu配線電極(17)と前記有機樹脂膜(10)とが接触しないように前記拡散防止膜(11)および前記有機樹脂膜(10)の一部を除去して前記Cu配線電極(17)上面の一部を露出させる工程と、
を備え、
前記工程(m)において、前記Cu配線電極(17)の裾部は前記拡散防止膜(11)で被覆され、当該裾部において前記拡散防止膜(11)を100nm以上の膜厚で形成することを特徴とする、
半導体装置の製造方法。
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WO2005106957A1 (ja) * | 2004-04-30 | 2005-11-10 | Fujitsu Limited | 半導体装置及びその製造方法 |
JP2006108234A (ja) * | 2004-10-01 | 2006-04-20 | Denso Corp | 半導体装置およびその製造方法 |
JP2006324565A (ja) * | 2005-05-20 | 2006-11-30 | Matsushita Electric Ind Co Ltd | 半導体デバイス及びその製造方法 |
JP2011049258A (ja) * | 2009-08-25 | 2011-03-10 | Toshiba Corp | 半導体装置の製造方法 |
JP2011222963A (ja) * | 2010-01-15 | 2011-11-04 | Rohm Co Ltd | 半導体装置およびその製造方法 |
JP2012204634A (ja) * | 2011-03-25 | 2012-10-22 | Mitsubishi Electric Corp | 半導体装置 |
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JP2000243774A (ja) * | 1999-02-24 | 2000-09-08 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
WO2005106957A1 (ja) * | 2004-04-30 | 2005-11-10 | Fujitsu Limited | 半導体装置及びその製造方法 |
JP2006108234A (ja) * | 2004-10-01 | 2006-04-20 | Denso Corp | 半導体装置およびその製造方法 |
JP2006324565A (ja) * | 2005-05-20 | 2006-11-30 | Matsushita Electric Ind Co Ltd | 半導体デバイス及びその製造方法 |
JP2011049258A (ja) * | 2009-08-25 | 2011-03-10 | Toshiba Corp | 半導体装置の製造方法 |
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JP2012204634A (ja) * | 2011-03-25 | 2012-10-22 | Mitsubishi Electric Corp | 半導体装置 |
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