JP6575398B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6575398B2 JP6575398B2 JP2016039067A JP2016039067A JP6575398B2 JP 6575398 B2 JP6575398 B2 JP 6575398B2 JP 2016039067 A JP2016039067 A JP 2016039067A JP 2016039067 A JP2016039067 A JP 2016039067A JP 6575398 B2 JP6575398 B2 JP 6575398B2
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- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 23
- 230000001681 protective effect Effects 0.000 description 8
- 238000005476 soldering Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
図1は、本発明の実施の形態1に係る半導体装置を示す断面図である。メインセル領域においてSi基板1の主面にp型アノード領域2が形成され、メインセル領域の外側の終端領域においてSi基板1の主面に複数のp型リング領域3及びn+型リング領域4が形成されている。SiO2酸化膜5及びTEOS酸化膜6がSi基板1の主面上に形成されている。SiO2酸化膜5及びTEOS酸化膜6は、p型アノード領域2及びp型リング領域3上にそれぞれ第1及び第2のコンタクトホール7,8を有する。
図3は、本発明の実施の形態2に係る半導体装置を示す断面図である。実施の形態1とは異なり、AlSi電極10が第2のコンタクトホール8を完全には埋め込まず、SiNSiN半絶縁性膜11が第2のコンタクトホール8を完全に埋め込む。これにより、終端領域のコンタクトカバレッジが悪くなることで断線したとしても、SiN半絶縁性膜11で埋め込まれて同電位となる。このため、逆バイアス時の電位がFLRとFPで分担され、耐圧を安定化することができる。その他の構成及び効果は実施の形態1と同様である。
Claims (5)
- 主面を有する半導体基板と、
メインセル領域において前記主面に形成された第1の拡散領域と、
前記メインセル領域の外側の終端領域において前記主面に形成された第2の拡散領域と、
前記主面上に形成され、前記第1及び第2の拡散領域上にそれぞれ第1及び第2のコンタクトホールを有する第1の絶縁膜と、
前記第1のコンタクトホール内に形成され、前記第1の拡散領域に接続された第1の電極と、
前記第2のコンタクトホール内に形成され、前記第2の拡散領域に接続された第2の電極と、
前記第2の電極を覆う半絶縁性膜と、
前記半絶縁性膜上に形成された第2の絶縁膜と、
前記第2の絶縁膜を覆うポリイミドと、
前記第1の電極上に形成された第3の電極とを備え、
第1及び第2の電極は同じ材質であり、
前記第1のコンタクトホールにおける前記第1の電極の厚みは前記第1のコンタクトホールの深さより薄く、
前記第1のコンタクトホールにおける前記第1の電極の厚み及び前記第3の電極の厚みの合計は前記第1のコンタクトホールの深さより厚く、
前記第2のコンタクトホールにおける前記第2の電極の厚みは前記第2のコンタクトホールの深さより厚いことを特徴とする半導体装置。 - 主面を有する半導体基板と、
メインセル領域において前記主面に形成された第1の拡散領域と、
前記メインセル領域の外側の終端領域において前記主面に形成された第2の拡散領域と、
前記主面上に形成され、前記第1及び第2の拡散領域上にそれぞれ第1及び第2のコンタクトホールを有する第1の絶縁膜と、
前記第1のコンタクトホール内に形成され、前記第1の拡散領域に接続された第1の電極と、
前記第2のコンタクトホール内に形成され、前記第2の拡散領域に接続された第2の電極と、
前記第2の電極を覆う半絶縁性膜と、
前記半絶縁性膜上に形成された第2の絶縁膜と、
前記第2の絶縁膜を覆うポリイミドと、
前記第1の電極上に形成された第3の電極とを備え、
第1及び第2の電極は同じ材質であり、
前記第1のコンタクトホールにおける前記第1の電極の厚みは前記第1のコンタクトホールの深さより薄く、
前記第1のコンタクトホールにおける前記第1の電極の厚み及び前記第3の電極の厚みの合計は前記第1のコンタクトホールの深さより厚く、
前記第2のコンタクトホールにおける前記第2の電極の厚みは前記第2のコンタクトホールの深さより浅く、
前記第2のコンタクトホールにおける前記第2の電極の厚み及び前記半絶縁性膜の厚みの合計は前記第1のコンタクトホールの深さより厚いことを特徴とする半導体装置。 - 前記第1及び第2の電極はAl系電極を有することを特徴とする請求項1又は2に記載の半導体装置。
- 前記第1及び第2の電極は、前記Al系電極の下に形成されたバリアメタルを更に有することを特徴とする請求項3に記載の半導体装置。
- 前記第1及び第2の電極はバリアメタルであることを特徴とする請求項1又は2に記載の半導体装置。
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