JP2008544522A - 亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ - Google Patents

亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ Download PDF

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Publication number
JP2008544522A
JP2008544522A JP2008516908A JP2008516908A JP2008544522A JP 2008544522 A JP2008544522 A JP 2008544522A JP 2008516908 A JP2008516908 A JP 2008516908A JP 2008516908 A JP2008516908 A JP 2008516908A JP 2008544522 A JP2008544522 A JP 2008544522A
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nanoparticles
zinc oxide
thin film
semiconductor
substrate
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JP2008544522A5 (enExample
Inventor
ハワード レビー，デイビッド
カロル スクデリ，アンドレア
マリー アービング，リン
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イーストマン コダック カンパニー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/811—Of specified metal oxide composition, e.g. conducting or semiconducting compositions such as ITO, ZnOx
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
JP2008516908A 2005-06-16 2006-06-01 亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ Withdrawn JP2008544522A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/156,143 US7402506B2 (en) 2005-06-16 2005-06-16 Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
PCT/US2006/021337 WO2006138072A1 (en) 2005-06-16 2006-06-01 Thin film transistors comprising zinc-oxide-based semiconductor materials

Publications (2)

Publication Number Publication Date
JP2008544522A true JP2008544522A (ja) 2008-12-04
JP2008544522A5 JP2008544522A5 (enExample) 2009-07-09

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JP2008516908A Withdrawn JP2008544522A (ja) 2005-06-16 2006-06-01 亜鉛酸化物をベースとした半導体材料を含む薄膜トランジスタ

Country Status (4)

Country Link
US (1) US7402506B2 (enExample)
EP (1) EP1891667A1 (enExample)
JP (1) JP2008544522A (enExample)
WO (1) WO2006138072A1 (enExample)

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JP2011228690A (ja) * 2010-04-02 2011-11-10 Semiconductor Energy Lab Co Ltd 半導体装置
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JP2012501941A (ja) * 2008-09-04 2012-01-26 ビーエーエスエフ ソシエタス・ヨーロピア 変性された粒子、及びこれらを含む分散液
WO2012090891A1 (ja) * 2010-12-27 2012-07-05 パナソニック株式会社 電界効果トランジスタおよびその製造方法
JP2012160715A (ja) * 2011-01-12 2012-08-23 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
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KR101298017B1 (ko) * 2008-12-24 2013-08-19 한양대학교 산학협력단 Ｎ-형 유기-무기 나노복합 초격자 투명 반도체 박막, 상기의 제조 방법 및 전자 기기적 용도
JP2015057363A (ja) * 2013-08-07 2015-03-26 ザ リージェンツ オブ ザ ユニヴァーシティー オブ カリフォルニアＴｈｅ Ｒｅｇｅｎｔｓ Ｏｆ Ｔｈｅ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｃａｌｉｆｏｒｎｉａ 透明な金属酸化物のナノ粒子の組成、その製造方法、及びこれからなる物品
JP2016001340A (ja) * 2010-07-01 2016-01-07 株式会社半導体エネルギー研究所 液晶表示装置
KR20240033737A (ko) * 2022-09-05 2024-03-13 서울대학교산학협력단 양이온 교환 반응을 이용한 금속 산화물 박막 및 그 형성방법, 박막 트랜지스터 및 그 제조방법

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