JP5800291B2 - ZnO系半導体素子およびその製造方法 - Google Patents
ZnO系半導体素子およびその製造方法 Download PDFInfo
- Publication number
- JP5800291B2 JP5800291B2 JP2011089002A JP2011089002A JP5800291B2 JP 5800291 B2 JP5800291 B2 JP 5800291B2 JP 2011089002 A JP2011089002 A JP 2011089002A JP 2011089002 A JP2011089002 A JP 2011089002A JP 5800291 B2 JP5800291 B2 JP 5800291B2
- Authority
- JP
- Japan
- Prior art keywords
- based semiconductor
- zno
- layer
- aluminum oxide
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 101
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 45
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 42
- 239000010931 gold Substances 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 17
- 229910052763 palladium Inorganic materials 0.000 claims description 12
- 238000004381 surface treatment Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000031700 light absorption Effects 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 80
- 239000000758 substrate Substances 0.000 description 31
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 230000035945 sensitivity Effects 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 12
- 238000004380 ashing Methods 0.000 description 9
- 230000003595 spectral effect Effects 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
Description
2 n型ZnO系半導体層
3 酸化アルミニウム膜
4 金属電極
4a Pd(パラジウム)層
4b Au(金)層
5 パッド電極
11 n型ZnO基板
13 酸化アルミニウム膜
14a Pd(パラジウム)層
14b Au(金)層
15 パッド電極
Claims (7)
- n型ZnO系半導体層と、
前記n型ZnO系半導体層上に形成された酸化アルミニウム膜と、
前記酸化アルミニウム膜上に形成されたパラジウム層とを備え、
前記n型ZnO系半導体層とパラジウム層でショットキーバリア構造を構成していることを特徴とするZnO系半導体素子。 - 前記酸化アルミニウム膜が形成される側の前記n型ZnO系半導体層の表面は、+C面であることを特徴とする請求項1に記載のZnO系半導体素子。
- 前記酸化アルミニウム膜は、酸化アルミニウムの単分子層の1倍〜10倍の範囲の膜厚を有することを特徴とする請求項1又は請求項2に記載のZnO系半導体素子。
- 前記パラジウム層を含む多層金層膜で構成された半透明電極が形成されていることを特徴とする請求項1〜請求項3のいずれか1項に記載のZnO系半導体素子。
- 前記n型ZnO系半導体層は、MgYZn1−YO(0≦Y<1)で構成されていることを特徴とする請求項1〜請求項4のいずれか1項に記載のZnO系半導体素子。
- 前記n型ZnO系半導体層は、紫外光を吸収する光吸収層として作用し、紫外光を検出することを特徴とする請求項5に記載のZnO系半導体素子。
- n型ZnO系半導体層の表面を酸化ラジカルに曝して表面処理を行う第1工程と、
前記第1工程の後に、前記n型ZnO系半導体層上に酸化アルミニウム膜を形成する第2工程と、
前記第2工程の後に、酸化アルミニウム膜上にパラジウム層を形成する第3工程とを備え、前記n型ZnO系半導体層とパラジウム層でショットキーバリア構造を構成していることを特徴とするZnO系半導体素子の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011089002A JP5800291B2 (ja) | 2011-04-13 | 2011-04-13 | ZnO系半導体素子およびその製造方法 |
US13/445,593 US8759828B2 (en) | 2011-04-13 | 2012-04-12 | ZnO-based semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011089002A JP5800291B2 (ja) | 2011-04-13 | 2011-04-13 | ZnO系半導体素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012222275A JP2012222275A (ja) | 2012-11-12 |
JP5800291B2 true JP5800291B2 (ja) | 2015-10-28 |
Family
ID=47005771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011089002A Expired - Fee Related JP5800291B2 (ja) | 2011-04-13 | 2011-04-13 | ZnO系半導体素子およびその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8759828B2 (ja) |
JP (1) | JP5800291B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105914241B (zh) | 2010-09-22 | 2018-07-24 | 第一太阳能有限公司 | 光伏装置和形成光伏装置的方法 |
TW201314782A (zh) * | 2011-09-23 | 2013-04-01 | Hon Hai Prec Ind Co Ltd | 薄膜電晶體的製造方法 |
WO2015025499A1 (ja) * | 2013-08-19 | 2015-02-26 | 出光興産株式会社 | 酸化物半導体基板及びショットキーバリアダイオード |
KR101665863B1 (ko) * | 2014-04-18 | 2016-10-25 | 한양대학교 산학협력단 | 정류 다이오드 및 그 제조방법 |
KR101683341B1 (ko) * | 2014-08-14 | 2016-12-07 | 한양대학교 산학협력단 | Uv 센서 및 그 제조방법 |
CN107851605B (zh) * | 2015-07-06 | 2021-11-26 | 香港科技大学 | 半导体器件及其制作方法 |
CN110729352A (zh) * | 2019-10-09 | 2020-01-24 | 杭州电子科技大学 | 一种碳化硅肖特基二极管的势垒调节方法 |
TWI750549B (zh) | 2019-12-06 | 2021-12-21 | 國家中山科學研究院 | 一種製備氮化鋁-氧化鋅紫外光檢測電極之方法 |
CN111081788B (zh) * | 2019-12-31 | 2021-06-29 | 山东大学 | 一种底部为肖特基接触的铟铝锌氧化物二极管及其制备方法 |
CN111081765B (zh) * | 2019-12-31 | 2021-06-29 | 山东大学 | 一种基于铟铝锌氧化物的肖特基二极管及其制备方法 |
CN113540208B (zh) * | 2021-06-15 | 2022-10-18 | 西安电子科技大学 | 基于原位生长MIS结构的垂直GaN肖特基二极管及其制备方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1199755A4 (en) * | 1999-07-26 | 2004-10-20 | Nat Inst Of Advanced Ind Scien | ZNO COMPOSITE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND ITS PRODUCTION METHOD |
DE19951207A1 (de) * | 1999-10-15 | 2001-04-19 | Twlux Halbleitertechnologien B | Halbleiterbauelement |
US6846731B2 (en) * | 2002-01-04 | 2005-01-25 | Rutgers, The State University Of New Jersey | Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films |
US7105868B2 (en) * | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
AU2003262981A1 (en) * | 2002-08-28 | 2004-03-19 | Moxtronics, Inc. | A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices |
JP3720341B2 (ja) * | 2003-02-12 | 2005-11-24 | ローム株式会社 | 半導体発光素子 |
JP4034208B2 (ja) * | 2003-02-25 | 2008-01-16 | ローム株式会社 | 透明電極 |
US7002179B2 (en) * | 2003-03-14 | 2006-02-21 | Rohm Co., Ltd. | ZnO system semiconductor device |
DE20313925U1 (de) * | 2003-09-04 | 2004-10-07 | Brose Fahrzeugteile Gmbh & Co. Kg, Coburg | Rückenlehnenstruktur für einen Kraftfahrzeugsitz |
US7402506B2 (en) * | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
JP5109049B2 (ja) * | 2005-12-26 | 2012-12-26 | シチズンホールディングス株式会社 | 光起電力型紫外線センサ |
US7973379B2 (en) * | 2005-12-26 | 2011-07-05 | Citizen Holdings Co., Ltd. | Photovoltaic ultraviolet sensor |
KR100785038B1 (ko) * | 2006-04-17 | 2007-12-12 | 삼성전자주식회사 | 비정질 ZnO계 TFT |
JP4939844B2 (ja) * | 2006-06-08 | 2012-05-30 | ローム株式会社 | ZnO系半導体素子 |
JP4362635B2 (ja) * | 2007-02-02 | 2009-11-11 | ローム株式会社 | ZnO系半導体素子 |
JP2008192927A (ja) * | 2007-02-06 | 2008-08-21 | Rohm Co Ltd | 多層基板 |
JP2008227001A (ja) * | 2007-03-09 | 2008-09-25 | Rohm Co Ltd | 赤外線リフレクター及び加熱装置 |
JP2008244307A (ja) * | 2007-03-28 | 2008-10-09 | Sharp Corp | 半導体発光素子および窒化物半導体発光素子 |
JP2008273814A (ja) * | 2007-04-04 | 2008-11-13 | Rohm Co Ltd | ZnO系薄膜 |
JP5025326B2 (ja) * | 2007-05-14 | 2012-09-12 | ローム株式会社 | 酸化物半導体受光素子 |
WO2008143526A1 (en) * | 2007-05-17 | 2008-11-27 | Canterprise Limited | Contact and method of fabrication |
JP2009021540A (ja) * | 2007-06-13 | 2009-01-29 | Rohm Co Ltd | ZnO系薄膜及びZnO系半導体素子 |
CN101821865A (zh) * | 2007-08-08 | 2010-09-01 | 罗姆股份有限公司 | 半导体元件以及半导体元件的制造方法 |
JP2009179534A (ja) * | 2008-01-31 | 2009-08-13 | Rohm Co Ltd | ZnO系基板及びZnO系基板の処理方法 |
CN102017197A (zh) * | 2008-02-21 | 2011-04-13 | 罗姆股份有限公司 | ZnO类半导体元件 |
JP5348961B2 (ja) * | 2008-07-29 | 2013-11-20 | シチズンホールディングス株式会社 | フォトダイオードの駆動方法及び光検出装置 |
US8187976B2 (en) * | 2009-08-26 | 2012-05-29 | Indian Institute Of Technology Madras | Stable P-type semiconducting behaviour in Li and Ni codoped ZnO |
JP2011049448A (ja) * | 2009-08-28 | 2011-03-10 | Mitsubishi Chemicals Corp | 酸化亜鉛系基板及び酸化亜鉛系基板の製造方法 |
KR100999798B1 (ko) * | 2010-02-11 | 2010-12-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
-
2011
- 2011-04-13 JP JP2011089002A patent/JP5800291B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-12 US US13/445,593 patent/US8759828B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2012222275A (ja) | 2012-11-12 |
US20120261658A1 (en) | 2012-10-18 |
US8759828B2 (en) | 2014-06-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5800291B2 (ja) | ZnO系半導体素子およびその製造方法 | |
Chen et al. | Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes | |
Alaie et al. | Recent advances in ultraviolet photodetectors | |
JP4977695B2 (ja) | 紫外受光素子 | |
Guo et al. | High-performance WO 3− x-WSe 2/SiO 2/n-Si heterojunction near-infrared photodetector via a homo-doping strategy | |
Chang et al. | Electrical and optical characteristics of UV photodetector with interlaced ZnO nanowires | |
KR20080070662A (ko) | 용액으로부터 형성된 나노결정 태양 전지 | |
CN110660882B (zh) | 一种栅控PIN结构GaN紫外探测器及其制备方法 | |
Yang et al. | Flexible all-inorganic photoconductor detectors based on perovskite/hole-conducting layer heterostructures | |
EP2726404B1 (en) | Method and apparatus for converting photon energy to electrical energy | |
JP2010056504A (ja) | 半導体素子 | |
Shao et al. | Ionization-enhanced AlGaN heterostructure avalanche photodiodes | |
Liu et al. | A nanopillar-modified high-sensitivity asymmetric graphene–GaN photodetector | |
CN103247708A (zh) | 半导体感光元件 | |
JP3405099B2 (ja) | カラーセンサ | |
Zainal et al. | Performance of polycrystalline GaN based metal-semiconductor-metal (MSM) photodetector with different contact | |
Zhang et al. | In-situ prepared WSe2/Si 2D-3D vertical heterojunction for high performance self-driven photodetector | |
JP6125176B2 (ja) | 高透過率保護膜作製方法および半導体発光素子の製造方法 | |
Zhang et al. | Efficient photovoltaic devices based on p-ZnSe/n-CdS core–shell heterojunctions with high open-circuit voltage | |
JP2009130013A (ja) | 酸化ガリウム基板用電極の製造方法及びそれにより製造される酸化ガリウム基板用電極 | |
Zhang et al. | Vertical Schottky ultraviolet photodetector based on graphene and top–down fabricated GaN nanorod arrays | |
JP5779005B2 (ja) | 紫外線受光素子及びそれらの製造方法 | |
Chen et al. | Improved performances of InGaN schottky photodetectors by inducing a thin insulator layer and mesa process | |
JP2007123587A (ja) | 受光素子 | |
KR20150042409A (ko) | 발광 소자의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140327 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140527 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150218 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150303 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150326 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150804 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150817 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5800291 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |