JP2010517292A5 - - Google Patents

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Publication number
JP2010517292A5
JP2010517292A5 JP2009547254A JP2009547254A JP2010517292A5 JP 2010517292 A5 JP2010517292 A5 JP 2010517292A5 JP 2009547254 A JP2009547254 A JP 2009547254A JP 2009547254 A JP2009547254 A JP 2009547254A JP 2010517292 A5 JP2010517292 A5 JP 2010517292A5
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gas
thin film
substrate
zinc oxide
reactive
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JP2009547254A
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JP5249243B2 (ja
JP2010517292A (ja
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Priority claimed from US11/627,525 external-priority patent/US8207063B2/en
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JP2009547254A 2007-01-26 2008-01-14 原子層堆積法 Expired - Fee Related JP5249243B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/627,525 US8207063B2 (en) 2007-01-26 2007-01-26 Process for atomic layer deposition
US11/627,525 2007-01-26
PCT/US2008/000466 WO2008091504A1 (en) 2007-01-26 2008-01-14 Process for atomic layer deposition

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JP2010517292A JP2010517292A (ja) 2010-05-20
JP2010517292A5 true JP2010517292A5 (enExample) 2013-04-04
JP5249243B2 JP5249243B2 (ja) 2013-07-31

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JP2009547254A Expired - Fee Related JP5249243B2 (ja) 2007-01-26 2008-01-14 原子層堆積法

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US (1) US8207063B2 (enExample)
EP (1) EP2106459A1 (enExample)
JP (1) JP5249243B2 (enExample)
WO (1) WO2008091504A1 (enExample)

Families Citing this family (1832)

* Cited by examiner, † Cited by third party
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