JP2011506758A5 - - Google Patents

Download PDF

Info

Publication number
JP2011506758A5
JP2011506758A5 JP2010526899A JP2010526899A JP2011506758A5 JP 2011506758 A5 JP2011506758 A5 JP 2011506758A5 JP 2010526899 A JP2010526899 A JP 2010526899A JP 2010526899 A JP2010526899 A JP 2010526899A JP 2011506758 A5 JP2011506758 A5 JP 2011506758A5
Authority
JP
Japan
Prior art keywords
gas material
substrate
reactive gas
thin film
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010526899A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011506758A (ja
Filing date
Publication date
Priority claimed from US11/861,618 external-priority patent/US7858144B2/en
Application filed filed Critical
Publication of JP2011506758A publication Critical patent/JP2011506758A/ja
Publication of JP2011506758A5 publication Critical patent/JP2011506758A5/ja
Pending legal-status Critical Current

Links

JP2010526899A 2007-09-26 2008-09-17 有機材料を堆積する方法 Pending JP2011506758A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/861,618 US7858144B2 (en) 2007-09-26 2007-09-26 Process for depositing organic materials
PCT/US2008/010801 WO2009042051A2 (en) 2007-09-26 2008-09-17 Process for depositing organic materials

Publications (2)

Publication Number Publication Date
JP2011506758A JP2011506758A (ja) 2011-03-03
JP2011506758A5 true JP2011506758A5 (enExample) 2011-11-10

Family

ID=40377691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526899A Pending JP2011506758A (ja) 2007-09-26 2008-09-17 有機材料を堆積する方法

Country Status (5)

Country Link
US (1) US7858144B2 (enExample)
EP (1) EP2210270B1 (enExample)
JP (1) JP2011506758A (enExample)
CN (1) CN102027603B (enExample)
WO (1) WO2009042051A2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US20080166880A1 (en) * 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US8211231B2 (en) * 2007-09-26 2012-07-03 Eastman Kodak Company Delivery device for deposition
US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
WO2010051341A1 (en) * 2008-10-31 2010-05-06 Sundew Technologies, Llc Coatings for suppressing metallic whiskers
CN102308368B (zh) 2008-12-04 2014-02-12 威科仪器有限公司 用于化学气相沉积的进气口元件及其制造方法
WO2010135107A1 (en) * 2009-05-11 2010-11-25 Regents Of The University Of Colorado, A Body Corporate Ultra-thin metal oxide and carbon-metal oxide films prepared by atomic layer deposition (ald)
JP5096437B2 (ja) * 2009-09-28 2012-12-12 株式会社ジャパンディスプレイイースト 有機ｅｌ表示装置
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
FI20105908A0 (fi) * 2010-08-30 2010-08-30 Beneq Oy Laite
JP5966618B2 (ja) * 2012-05-28 2016-08-10 東京エレクトロン株式会社 成膜方法
KR101435100B1 (ko) * 2012-06-20 2014-08-29 주식회사 엠티에스나노테크 원자층 증착 장치
DE102012214411B4 (de) * 2012-08-14 2022-05-25 Osram Oled Gmbh Vorrichtung und verfahren zum herstellen hermetisch dichter kavitäten
US20140206137A1 (en) * 2013-01-23 2014-07-24 David H. Levy Deposition system for thin film formation
TW201435132A (zh) * 2013-02-22 2014-09-16 Applied Materials Inc 包含ＳｉＯＣ的膜的催化性原子層沉積
KR102075528B1 (ko) * 2013-05-16 2020-03-03 삼성디스플레이 주식회사 증착장치, 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치
EP3003286B1 (en) * 2013-05-24 2022-04-27 Nanexa AB Method of preparing solid nanoparticles with inorganic coating and use thereof
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
CN105745353B (zh) 2013-08-30 2019-07-05 汉阳大学校产学协力团 有机/无机杂化薄膜及其制备方法
CN103510074A (zh) * 2013-10-25 2014-01-15 南京大学 基于ald技术的复合无机-有机杂化物薄膜的制备方法
CN106211763B (zh) * 2014-03-25 2019-08-27 住友金属矿山株式会社 包覆焊料材料及其制造方法
RU2695997C2 (ru) * 2014-06-12 2019-07-30 БАСФ Коатингс ГмбХ Способ получения гибких органо-неорганических слоистых материалов
EP3155142B1 (en) * 2014-06-13 2021-04-21 BASF Coatings GmbH Process for producing organic-inorganic laminates
GB201412201D0 (en) * 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
JP6420706B2 (ja) * 2015-04-07 2018-11-07 信越化学工業株式会社 太陽電池用パッシベーション膜形成方法及び太陽電池用パッシベーション膜形成装置
JP6932321B2 (ja) * 2015-06-01 2021-09-08 フォージ ナノ インコーポレイティド アノード活物質、カソード活物質及び固体電解質のためのナノ加工コーティング並びにナノ加工コーティングを含む電池の製造方法
KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
US10865477B2 (en) * 2016-02-08 2020-12-15 Illinois Tool Works Inc. Method and system for the localized deposit of metal on a surface
CN106086812B (zh) * 2016-07-20 2018-08-03 南京航空航天大学 一种金属表面防腐蚀耐磨损的复合涂层及其制备方法
US10400332B2 (en) * 2017-03-14 2019-09-03 Eastman Kodak Company Deposition system with interlocking deposition heads
US12006570B2 (en) * 2017-08-31 2024-06-11 Uchicago Argonne, Llc Atomic layer deposition for continuous, high-speed thin films
CN108448006B (zh) * 2018-03-29 2021-01-22 京东方科技集团股份有限公司 封装结构、电子装置以及封装方法
US10673046B2 (en) * 2018-04-13 2020-06-02 GM Global Technology Operations LLC Separator for lithium metal based batteries
GB2585077A (en) 2019-06-28 2020-12-30 Nanexa Ab Apparatus
WO2021059332A1 (ja) * 2019-09-24 2021-04-01 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
US20220359332A1 (en) * 2021-05-09 2022-11-10 Spts Technologies Limited Temporary passivation layer on a substrate
CN115821229A (zh) * 2022-11-25 2023-03-21 江苏微导纳米科技股份有限公司 一种用于沉积薄膜的方法和设备以及薄膜

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI57975C (fi) * 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
US6316098B1 (en) * 1998-03-27 2001-11-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Molecular layer epitaxy method and compositions
US6783849B2 (en) * 1998-03-27 2004-08-31 Yissum Research Development Company Of The Hebrew University Of Jerusalem Molecular layer epitaxy method and compositions
US7476420B2 (en) * 2000-10-23 2009-01-13 Asm International N.V. Process for producing metal oxide films at low temperatures
TW548239B (en) * 2000-10-23 2003-08-21 Asm Microchemistry Oy Process for producing aluminium oxide films at low temperatures
KR20030057133A (ko) * 2001-12-28 2003-07-04 삼성전자주식회사 금속 패턴 형성용 유기금속 전구체 및 이를 이용한 금속패턴 형성방법
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US20050084610A1 (en) * 2002-08-13 2005-04-21 Selitser Simon I. Atmospheric pressure molecular layer CVD
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
JP2005089781A (ja) * 2003-09-12 2005-04-07 Mitsui Eng & Shipbuild Co Ltd 薄膜形成装置
US20070190247A1 (en) * 2004-05-18 2007-08-16 Mecharonics Co., Ltd. Method for forming organic light-emitting layer
JP4363365B2 (ja) * 2004-07-20 2009-11-11 株式会社デンソー カラー有機ｅｌディスプレイおよびその製造方法
NO20045674D0 (no) * 2004-12-28 2004-12-28 Uni I Oslo Thin films prepared with gas phase deposition technique
CN1937175B (zh) * 2005-09-20 2012-10-03 中芯国际集成电路制造(上海)有限公司 用于半导体器件的使用大气压的材料原子层沉积的方法
US20070077349A1 (en) * 2005-09-30 2007-04-05 Eastman Kodak Company Patterning OLED device electrodes and optical material
US7754906B2 (en) * 2005-10-07 2010-07-13 Air Products And Chemicals, Inc. Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
KR101488855B1 (ko) * 2006-03-10 2015-02-04 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물
US7456429B2 (en) * 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
US20080100202A1 (en) * 2006-11-01 2008-05-01 Cok Ronald S Process for forming oled conductive protective layer
US7722422B2 (en) * 2007-05-21 2010-05-25 Global Oled Technology Llc Device and method for improved power distribution for a transparent electrode
US7572686B2 (en) * 2007-09-26 2009-08-11 Eastman Kodak Company System for thin film deposition utilizing compensating forces
US8133555B2 (en) * 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex

Similar Documents

Publication Publication Date Title
JP2011506758A5 (enExample)
JP2011501877A5 (enExample)
JP2010541159A5 (enExample)
JP2010517292A5 (enExample)
WO2009042051A3 (en) Process for depositing organic materials
JP4564570B2 (ja) 原子層堆積装置
CN103359720B (zh) 石墨烯纳米窄带的制备方法
JP2010541237A5 (enExample)
JP2010540774A5 (enExample)
WO2009042052A3 (en) Process for forming thin film encapsulation layers
KR20110084110A (ko) 기체 및 수분 차단용 그래핀 보호막, 이의 형성 방법 및 그의 용도
FI20105901L (fi) Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
JP2011501779A5 (enExample)
WO2015049624A1 (en) Amine precursors for depositing graphene
JP2010540773A5 (enExample)
WO2010054075A3 (en) Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films
WO2007126582A3 (en) Apparatus for atomic layer deposition
JP2011500480A5 (enExample)
TW200704819A (en) Method for silicon based dielectric chemical vapor deposition
CN104364419A (zh) 通过原子层沉积来涂覆衬底卷式基材
WO2012070385A1 (ja) グラフェンを含む導電性薄膜および透明導電膜
Miyata et al. Fabrication and characterization of graphene/hexagonal boron nitride hybrid sheets
JP2010541242A5 (enExample)
US20170313046A1 (en) Manufacturing method for laminated body
US20220223411A1 (en) Methods for depositing gap-filling fluids and related systems and devices