JP2010541237A5 - - Google Patents

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Publication number
JP2010541237A5
JP2010541237A5 JP2010526905A JP2010526905A JP2010541237A5 JP 2010541237 A5 JP2010541237 A5 JP 2010541237A5 JP 2010526905 A JP2010526905 A JP 2010526905A JP 2010526905 A JP2010526905 A JP 2010526905A JP 2010541237 A5 JP2010541237 A5 JP 2010541237A5
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JP
Japan
Prior art keywords
substrate
deposition
layer
thin film
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010526905A
Other languages
English (en)
Japanese (ja)
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JP2010541237A (ja
Filing date
Publication date
Priority claimed from US11/861,491 external-priority patent/US7851380B2/en
Application filed filed Critical
Publication of JP2010541237A publication Critical patent/JP2010541237A/ja
Publication of JP2010541237A5 publication Critical patent/JP2010541237A5/ja
Pending legal-status Critical Current

Links

JP2010526905A 2007-09-26 2008-09-18 原子層堆積による薄膜トランジスタの製造方法 Pending JP2010541237A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/861,491 US7851380B2 (en) 2007-09-26 2007-09-26 Process for atomic layer deposition
PCT/US2008/010853 WO2009042059A1 (en) 2007-09-26 2008-09-18 Process for making thin film transistors by atomic layer deposition

Publications (2)

Publication Number Publication Date
JP2010541237A JP2010541237A (ja) 2010-12-24
JP2010541237A5 true JP2010541237A5 (enExample) 2012-11-22

Family

ID=40223763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526905A Pending JP2010541237A (ja) 2007-09-26 2008-09-18 原子層堆積による薄膜トランジスタの製造方法

Country Status (6)

Country Link
US (1) US7851380B2 (enExample)
EP (1) EP2193222A1 (enExample)
JP (1) JP2010541237A (enExample)
CN (1) CN101809190B (enExample)
TW (1) TW200926308A (enExample)
WO (1) WO2009042059A1 (enExample)

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KR101192221B1 (ko) * 2011-03-25 2012-10-17 서울대학교산학협력단 산화아연 박막 트랜지스터 및 이의 제조방법
JP5933895B2 (ja) * 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
CN104081456B (zh) 2011-11-23 2018-07-03 康宁股份有限公司 用于保护玻璃板的气相沉积方法
CN103165454B (zh) * 2011-12-12 2016-08-17 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
US9054255B2 (en) * 2012-03-23 2015-06-09 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
US8653516B1 (en) * 2012-08-31 2014-02-18 Eastman Kodak Company High performance thin film transistor
CN102953048B (zh) * 2012-11-13 2015-03-04 西安交通大学 一种纳米掺杂结构及其制备方法
US20140206137A1 (en) * 2013-01-23 2014-07-24 David H. Levy Deposition system for thin film formation
KR101933727B1 (ko) * 2013-08-26 2018-12-31 연세대학교 산학협력단 원자층 증착법으로 산화물 박막의 일부를 할로겐 원소로 도핑할 수 있는 할로겐 도핑 소스, 상기 할로겐 도핑 소스의 제조 방법, 상기 할로겐 원소 소스를 이용하여 원자층 증착법으로 산화물 박막의 일부를 할로겐으로 도핑하는 방법, 및 상기 방법을 이용하여 형성된 할로겐 원소가 도핑된 산화물 박막
TWI480406B (zh) * 2013-11-28 2015-04-11 Metal Ind Res & Dev Ct 鍍膜設備及輸送模組
JP6228444B2 (ja) * 2013-12-06 2017-11-08 東京エレクトロン株式会社 有機ｅｌ表示装置およびその製造方法
KR102244070B1 (ko) * 2014-01-07 2021-04-26 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
WO2015112470A1 (en) * 2014-01-21 2015-07-30 Applied Materials, Inc. Thin film encapsulation processing system and process kit permitting low-pressure tool replacement
JP2016001722A (ja) * 2014-04-08 2016-01-07 株式会社半導体エネルギー研究所 半導体装置及び該半導体装置を含む電子機器
KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
CN108028297A (zh) 2015-09-15 2018-05-11 加利福尼亚大学董事会 氧化锌在氮化镓上的多步沉积
US10400332B2 (en) * 2017-03-14 2019-09-03 Eastman Kodak Company Deposition system with interlocking deposition heads
US10501848B2 (en) * 2017-03-14 2019-12-10 Eastman Kodak Company Deposition system with modular deposition heads
CN107604340B (zh) * 2017-08-31 2023-09-01 安徽光智科技有限公司 化学气相沉积炉
CN112447855A (zh) * 2019-09-03 2021-03-05 北京大学 一种薄膜晶体管的制备方法
CN115190820B (zh) 2019-12-18 2024-12-20 无限纳米技术公司 用于薄膜沉积的设备和方法
JP7098677B2 (ja) 2020-03-25 2022-07-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
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