JP2010541237A - 原子層堆積による薄膜トランジスタの製造方法 - Google Patents

原子層堆積による薄膜トランジスタの製造方法 Download PDF

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Publication number
JP2010541237A
JP2010541237A JP2010526905A JP2010526905A JP2010541237A JP 2010541237 A JP2010541237 A JP 2010541237A JP 2010526905 A JP2010526905 A JP 2010526905A JP 2010526905 A JP2010526905 A JP 2010526905A JP 2010541237 A JP2010541237 A JP 2010541237A
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deposition
substrate
gas
layer
thin film
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JP2010541237A5 (enExample
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フォレスター ネルソン，シェルビー
ハワード レビー，デイビッド
マリー アービング，リン
ジェローム カウデリー−コルバン，ピーター
キャロル フリーマン，ダイアン
アール． エリンジャー，キャロライン
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イーストマン コダック カンパニー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00—Products made by additive manufacturing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2010526905A 2007-09-26 2008-09-18 原子層堆積による薄膜トランジスタの製造方法 Pending JP2010541237A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/861,491 US7851380B2 (en) 2007-09-26 2007-09-26 Process for atomic layer deposition
PCT/US2008/010853 WO2009042059A1 (en) 2007-09-26 2008-09-18 Process for making thin film transistors by atomic layer deposition

Publications (2)

Publication Number Publication Date
JP2010541237A true JP2010541237A (ja) 2010-12-24
JP2010541237A5 JP2010541237A5 (enExample) 2012-11-22

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JP2010526905A Pending JP2010541237A (ja) 2007-09-26 2008-09-18 原子層堆積による薄膜トランジスタの製造方法

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Country Link
US (1) US7851380B2 (enExample)
EP (1) EP2193222A1 (enExample)
JP (1) JP2010541237A (enExample)
CN (1) CN101809190B (enExample)
TW (1) TW200926308A (enExample)
WO (1) WO2009042059A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
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JP2010540774A (ja) * 2007-09-26 2010-12-24 イーストマン コダック カンパニー 光学膜の製造方法
WO2012134105A3 (ko) * 2011-03-25 2013-01-03 서울대학교산학협력단 산화아연 박막 트랜지스터 및 이의 제조방법
JP2013105763A (ja) * 2011-11-10 2013-05-30 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
JP2016001722A (ja) * 2014-04-08 2016-01-07 株式会社半導体エネルギー研究所 半導体装置及び該半導体装置を含む電子機器
JP2016106419A (ja) * 2009-10-29 2016-06-16 株式会社半導体エネルギー研究所 半導体装置
JP2023506526A (ja) * 2019-12-18 2023-02-16 ピー． マッセルマン，ケヴィン 薄膜堆積のための装置および方法

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US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US8211231B2 (en) * 2007-09-26 2012-07-03 Eastman Kodak Company Delivery device for deposition
US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide
US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
EP2159304A1 (en) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
FR2944140B1 (fr) * 2009-04-02 2011-09-16 Commissariat Energie Atomique Dispositif de detection d'image electronique
WO2010151430A1 (en) * 2009-06-22 2010-12-29 Arkema Inc. Chemical vapor deposition using n,o polydentate ligand complexes of metals
GB0916700D0 (en) * 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
US8691675B2 (en) * 2009-11-25 2014-04-08 International Business Machines Corporation Vapor phase deposition processes for doping silicon
EP2360293A1 (en) 2010-02-11 2011-08-24 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
EP2362411A1 (en) 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
JP5569084B2 (ja) * 2010-03-25 2014-08-13 セイコーエプソン株式会社 画像表示装置および画像表示方法
US8865259B2 (en) 2010-04-26 2014-10-21 Singulus Mocvd Gmbh I.Gr. Method and system for inline chemical vapor deposition
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20120073568A1 (en) * 2010-09-23 2012-03-29 Applied Nanstructured Solutions, Llc. Methods for in situ deposition of coatings and articles produced using same
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US8133806B1 (en) 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
KR20140138323A (ko) * 2010-10-21 2014-12-03 비코 에이엘디 인코포레이티드 원자층 증착을 이용한 장치상의 배리어 층 형성
CN102021535A (zh) * 2010-12-21 2011-04-20 上海纳米技术及应用国家工程研究中心有限公司 铝掺杂氧化锌透明导电薄膜的低温制备方法
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CN102953048B (zh) * 2012-11-13 2015-03-04 西安交通大学 一种纳米掺杂结构及其制备方法
US20140206137A1 (en) * 2013-01-23 2014-07-24 David H. Levy Deposition system for thin film formation
KR101933727B1 (ko) * 2013-08-26 2018-12-31 연세대학교 산학협력단 원자층 증착법으로 산화물 박막의 일부를 할로겐 원소로 도핑할 수 있는 할로겐 도핑 소스, 상기 할로겐 도핑 소스의 제조 방법, 상기 할로겐 원소 소스를 이용하여 원자층 증착법으로 산화물 박막의 일부를 할로겐으로 도핑하는 방법, 및 상기 방법을 이용하여 형성된 할로겐 원소가 도핑된 산화물 박막
TWI480406B (zh) * 2013-11-28 2015-04-11 Metal Ind Res & Dev Ct 鍍膜設備及輸送模組
JP6228444B2 (ja) * 2013-12-06 2017-11-08 東京エレクトロン株式会社 有機ｅｌ表示装置およびその製造方法
KR102244070B1 (ko) * 2014-01-07 2021-04-26 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
WO2015112470A1 (en) * 2014-01-21 2015-07-30 Applied Materials, Inc. Thin film encapsulation processing system and process kit permitting low-pressure tool replacement
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US10400332B2 (en) * 2017-03-14 2019-09-03 Eastman Kodak Company Deposition system with interlocking deposition heads
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CN107604340B (zh) * 2017-08-31 2023-09-01 安徽光智科技有限公司 化学气相沉积炉
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JP7098677B2 (ja) 2020-03-25 2022-07-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010540774A (ja) * 2007-09-26 2010-12-24 イーストマン コダック カンパニー 光学膜の製造方法
JP2016106419A (ja) * 2009-10-29 2016-06-16 株式会社半導体エネルギー研究所 半導体装置
US9806079B2 (en) 2009-10-29 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10720433B2 (en) 2009-10-29 2020-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012134105A3 (ko) * 2011-03-25 2013-01-03 서울대학교산학협력단 산화아연 박막 트랜지스터 및 이의 제조방법
JP2013105763A (ja) * 2011-11-10 2013-05-30 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
JP2016001722A (ja) * 2014-04-08 2016-01-07 株式会社半導体エネルギー研究所 半導体装置及び該半導体装置を含む電子機器
JP2023506526A (ja) * 2019-12-18 2023-02-16 ピー． マッセルマン，ケヴィン 薄膜堆積のための装置および方法

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TW200926308A (en) 2009-06-16
WO2009042059A1 (en) 2009-04-02
CN101809190B (zh) 2013-10-16
EP2193222A1 (en) 2010-06-09
CN101809190A (zh) 2010-08-18
US7851380B2 (en) 2010-12-14
US20090081842A1 (en) 2009-03-26

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