JP2013105763A - 半導体装置および半導体装置の作製方法 - Google Patents
半導体装置および半導体装置の作製方法 Download PDFInfo
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- JP2013105763A JP2013105763A JP2011246328A JP2011246328A JP2013105763A JP 2013105763 A JP2013105763 A JP 2013105763A JP 2011246328 A JP2011246328 A JP 2011246328A JP 2011246328 A JP2011246328 A JP 2011246328A JP 2013105763 A JP2013105763 A JP 2013105763A
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
【解決手段】絶縁表面上の一対の電極と、一対の電極と接して設けられる酸化物半導体膜と、酸化物半導体膜上のゲート絶縁膜と、ゲート絶縁膜を介して酸化物半導体膜と重畳するゲート電極と、を有し、一対の電極において、酸化物半導体膜と接する領域にハロゲン元素を含む半導体装置とする。さらに、一対の電極において、酸化物半導体膜と接する領域にハロゲン元素を含ませる方法として、フッ素を含む雰囲気におけるプラズマ処理を用いることができる。
【選択図】図1
Description
本実施の形態では、本発明の一態様に係る半導体装置であるトランジスタおよびその作製方法について図1乃至図4を用いて説明する。
本実施の形態では、実施の形態1で示したトランジスタと異なる構造のトランジスタおよびその作製方法について図5および図6を用いて説明する。
本実施の形態では、実施の形態1または実施の形態2で示したトランジスタを用いて、半導体記憶装置を作製する例について説明する。
実施の形態1または実施の形態2で示したトランジスタまたは実施の形態3に示した半導体記憶装置を少なくとも一部に用いてCPU(Central Processing Unit)を構成することができる。
本実施の形態では、実施の形態1乃至実施の形態4に示すトランジスタ、半導体記憶装置およびCPUの一種以上を含む電子機器の例について説明する。
102 下地絶縁膜
104 一対の電極
106 酸化物半導体膜
106a 高抵抗領域
106b 低抵抗領域
108 ゲート絶縁膜
110 ゲート電極
112 層間絶縁膜
202 下地絶縁膜
204 一対の電極
206 酸化物半導体膜
206a 高抵抗領域
206b 低抵抗領域
208 ゲート絶縁膜
210 ゲート電極
212 層間絶縁膜
1141 スイッチング素子
1142 記憶素子
1143 記憶素子群
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
9300 筐体
9301 ボタン
9302 マイクロフォン
9303 表示部
9304 スピーカ
9305 カメラ
9310 筐体
9311 表示部
9320 筐体
9321 ボタン
9322 マイクロフォン
9323 表示部
9630 筐体
9631a 表示部
9631b 表示部
9633 留め具
9638 操作スイッチ
Claims (6)
- 絶縁表面上の一対の電極と、
前記一対の電極と接して設けられる酸化物半導体膜と、
前記酸化物半導体膜上のゲート絶縁膜と、
前記ゲート絶縁膜を介して前記酸化物半導体膜と重畳するゲート電極と、を有し、
前記一対の電極において、前記酸化物半導体膜と接する領域にハロゲン元素を含むことを特徴とする半導体装置。 - 絶縁表面上のゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上の一対の電極と、
前記一対の電極と接して設けられる酸化物半導体膜と、を有し、
前記一対の電極において、前記酸化物半導体膜と接する領域にハロゲン元素を含むことを特徴とする半導体装置。 - 請求項1または請求項2において、
前記ハロゲン元素はフッ素であることを特徴とする半導体装置。 - 絶縁表面上に一対の電極を形成し、
前記一対の電極に対してハロゲン化処理を行った後、前記一対の電極と接する酸化物半導体膜を形成し、
前記酸化物半導体膜上にゲート絶縁膜を形成し、
前記ゲート絶縁膜を介して前記酸化物半導体膜と重畳するゲート電極を形成することを特徴とする半導体装置の作製方法。 - 絶縁表面上にゲート電極を形成し、
前記ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に一対の電極を形成し、
前記一対の電極に対してハロゲン化処理を行った後、前記一対の電極と接する酸化物半導体膜を形成することを特徴とする半導体装置の作製方法。 - 請求項4または請求項5において、
前記ハロゲン化処理は、フッ素を含む雰囲気におけるプラズマ処理であることを特徴とする半導体装置の作製方法。
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