CN101809190B - 由原子层沉积制造薄膜晶体管的方法 - Google Patents

由原子层沉积制造薄膜晶体管的方法 Download PDF

Info

Publication number
CN101809190B
CN101809190B CN2008801089602A CN200880108960A CN101809190B CN 101809190 B CN101809190 B CN 101809190B CN 2008801089602 A CN2008801089602 A CN 2008801089602A CN 200880108960 A CN200880108960 A CN 200880108960A CN 101809190 B CN101809190 B CN 101809190B
Authority
CN
China
Prior art keywords
deposition
substrate
layer
thin film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008801089602A
Other languages
English (en)
Chinese (zh)
Other versions
CN101809190A (zh
Inventor
S·F·奈尔逊
D·H·莱维
L·M·欧文
P·J·考德里-科尔万
D·C·弗里曼
C·R·埃林格尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of CN101809190A publication Critical patent/CN101809190A/zh
Application granted granted Critical
Publication of CN101809190B publication Critical patent/CN101809190B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00—Products made by additive manufacturing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
CN2008801089602A 2007-09-26 2008-09-18 由原子层沉积制造薄膜晶体管的方法 Expired - Fee Related CN101809190B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/861,491 US7851380B2 (en) 2007-09-26 2007-09-26 Process for atomic layer deposition
US11/861491 2007-09-26
PCT/US2008/010853 WO2009042059A1 (en) 2007-09-26 2008-09-18 Process for making thin film transistors by atomic layer deposition

Publications (2)

Publication Number Publication Date
CN101809190A CN101809190A (zh) 2010-08-18
CN101809190B true CN101809190B (zh) 2013-10-16

Family

ID=40223763

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801089602A Expired - Fee Related CN101809190B (zh) 2007-09-26 2008-09-18 由原子层沉积制造薄膜晶体管的方法

Country Status (6)

Country Link
US (1) US7851380B2 (enExample)
EP (1) EP2193222A1 (enExample)
JP (1) JP2010541237A (enExample)
CN (1) CN101809190B (enExample)
TW (1) TW200926308A (enExample)
WO (1) WO2009042059A1 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US8211231B2 (en) * 2007-09-26 2012-07-03 Eastman Kodak Company Delivery device for deposition
US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide
US20090081360A1 (en) * 2007-09-26 2009-03-26 Fedorovskaya Elena A Oled display encapsulation with the optical property
US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
EP2159304A1 (en) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
FR2944140B1 (fr) * 2009-04-02 2011-09-16 Commissariat Energie Atomique Dispositif de detection d'image electronique
WO2010151430A1 (en) * 2009-06-22 2010-12-29 Arkema Inc. Chemical vapor deposition using n,o polydentate ligand complexes of metals
GB0916700D0 (en) * 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
KR101930682B1 (ko) * 2009-10-29 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8691675B2 (en) * 2009-11-25 2014-04-08 International Business Machines Corporation Vapor phase deposition processes for doping silicon
EP2360293A1 (en) 2010-02-11 2011-08-24 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
EP2362411A1 (en) 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
JP5569084B2 (ja) * 2010-03-25 2014-08-13 セイコーエプソン株式会社 画像表示装置および画像表示方法
US8865259B2 (en) 2010-04-26 2014-10-21 Singulus Mocvd Gmbh I.Gr. Method and system for inline chemical vapor deposition
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20120073568A1 (en) * 2010-09-23 2012-03-29 Applied Nanstructured Solutions, Llc. Methods for in situ deposition of coatings and articles produced using same
US8486192B2 (en) 2010-09-30 2013-07-16 Soitec Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
US8133806B1 (en) 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
KR20140138323A (ko) * 2010-10-21 2014-12-03 비코 에이엘디 인코포레이티드 원자층 증착을 이용한 장치상의 배리어 층 형성
CN102021535A (zh) * 2010-12-21 2011-04-20 上海纳米技术及应用国家工程研究中心有限公司 铝掺杂氧化锌透明导电薄膜的低温制备方法
EP2481830A1 (en) * 2011-01-31 2012-08-01 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus for atomic layer deposition.
KR101192221B1 (ko) * 2011-03-25 2012-10-17 서울대학교산학협력단 산화아연 박막 트랜지스터 및 이의 제조방법
JP5933895B2 (ja) * 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
CN104081456B (zh) 2011-11-23 2018-07-03 康宁股份有限公司 用于保护玻璃板的气相沉积方法
CN103165454B (zh) * 2011-12-12 2016-08-17 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
US9054255B2 (en) * 2012-03-23 2015-06-09 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
US8653516B1 (en) * 2012-08-31 2014-02-18 Eastman Kodak Company High performance thin film transistor
CN102953048B (zh) * 2012-11-13 2015-03-04 西安交通大学 一种纳米掺杂结构及其制备方法
US20140206137A1 (en) * 2013-01-23 2014-07-24 David H. Levy Deposition system for thin film formation
KR101933727B1 (ko) * 2013-08-26 2018-12-31 연세대학교 산학협력단 원자층 증착법으로 산화물 박막의 일부를 할로겐 원소로 도핑할 수 있는 할로겐 도핑 소스, 상기 할로겐 도핑 소스의 제조 방법, 상기 할로겐 원소 소스를 이용하여 원자층 증착법으로 산화물 박막의 일부를 할로겐으로 도핑하는 방법, 및 상기 방법을 이용하여 형성된 할로겐 원소가 도핑된 산화물 박막
TWI480406B (zh) * 2013-11-28 2015-04-11 Metal Ind Res & Dev Ct 鍍膜設備及輸送模組
JP6228444B2 (ja) * 2013-12-06 2017-11-08 東京エレクトロン株式会社 有機ｅｌ表示装置およびその製造方法
KR102244070B1 (ko) * 2014-01-07 2021-04-26 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
WO2015112470A1 (en) * 2014-01-21 2015-07-30 Applied Materials, Inc. Thin film encapsulation processing system and process kit permitting low-pressure tool replacement
JP2016001722A (ja) * 2014-04-08 2016-01-07 株式会社半導体エネルギー研究所 半導体装置及び該半導体装置を含む電子機器
KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
CN108028297A (zh) 2015-09-15 2018-05-11 加利福尼亚大学董事会 氧化锌在氮化镓上的多步沉积
US10400332B2 (en) * 2017-03-14 2019-09-03 Eastman Kodak Company Deposition system with interlocking deposition heads
US10501848B2 (en) * 2017-03-14 2019-12-10 Eastman Kodak Company Deposition system with modular deposition heads
CN107604340B (zh) * 2017-08-31 2023-09-01 安徽光智科技有限公司 化学气相沉积炉
CN112447855A (zh) * 2019-09-03 2021-03-05 北京大学 一种薄膜晶体管的制备方法
CN115190820B (zh) 2019-12-18 2024-12-20 无限纳米技术公司 用于薄膜沉积的设备和方法
JP7098677B2 (ja) 2020-03-25 2022-07-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
US12180586B2 (en) * 2021-08-13 2024-12-31 NanoMaster, Inc. Apparatus and methods for roll-to-roll (R2R) plasma enhanced/activated atomic layer deposition (PEALD/PAALD)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050084610A1 (en) * 2002-08-13 2005-04-21 Selitser Simon I. Atmospheric pressure molecular layer CVD
US20060244107A1 (en) * 2003-06-20 2006-11-02 Toshinori Sugihara Semiconductor device, manufacturing method, and electronic device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI57975C (fi) 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US4430149A (en) * 1981-12-30 1984-02-07 Rca Corporation Chemical vapor deposition of epitaxial silicon
JPS5941470A (ja) * 1982-08-31 1984-03-07 Shimadzu Corp 多室形薄膜作成装置
US7563715B2 (en) * 2005-12-05 2009-07-21 Asm International N.V. Method of producing thin films
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US20060003485A1 (en) * 2004-06-30 2006-01-05 Hoffman Randy L Devices and methods of making the same
US7265003B2 (en) * 2004-10-22 2007-09-04 Hewlett-Packard Development Company, L.P. Method of forming a transistor having a dual layer dielectric
JP4803578B2 (ja) * 2005-12-08 2011-10-26 東京エレクトロン株式会社 成膜方法
CN101589171A (zh) * 2006-03-03 2009-11-25 普拉萨德·盖德吉尔 用于大面积多层原子层化学气相处理薄膜的装置和方法
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US20080296567A1 (en) * 2007-06-04 2008-12-04 Irving Lyn M Method of making thin film transistors comprising zinc-oxide-based semiconductor materials

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050084610A1 (en) * 2002-08-13 2005-04-21 Selitser Simon I. Atmospheric pressure molecular layer CVD
US20060244107A1 (en) * 2003-06-20 2006-11-02 Toshinori Sugihara Semiconductor device, manufacturing method, and electronic device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LIM S J ET AL.The application of atomic layer diposition for transparent thin film transistor.<<IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE>>.2006,634-635. *

Also Published As

Publication number Publication date
TW200926308A (en) 2009-06-16
JP2010541237A (ja) 2010-12-24
WO2009042059A1 (en) 2009-04-02
EP2193222A1 (en) 2010-06-09
CN101809190A (zh) 2010-08-18
US7851380B2 (en) 2010-12-14
US20090081842A1 (en) 2009-03-26

Similar Documents

Publication Publication Date Title
CN101809190B (zh) 由原子层沉积制造薄膜晶体管的方法
CN102017104B (zh) 用于制造掺杂的氧化锌的方法
US8207063B2 (en) Process for atomic layer deposition
CN101809192B (zh) 用于沉积的输送装置
US10351954B2 (en) Deposition system and method using a delivery head separated from a substrate by gas pressure
JP5149272B2 (ja) 原子層堆積法
US20080166880A1 (en) Delivery device for deposition
US20070228470A1 (en) Apparatus for atomic layer deposition

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20131016

Termination date: 20200918

CF01 Termination of patent right due to non-payment of annual fee