JP5149272B2 - 原子層堆積法 - Google Patents
原子層堆積法 Download PDFInfo
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- JP5149272B2 JP5149272B2 JP2009502830A JP2009502830A JP5149272B2 JP 5149272 B2 JP5149272 B2 JP 5149272B2 JP 2009502830 A JP2009502830 A JP 2009502830A JP 2009502830 A JP2009502830 A JP 2009502830A JP 5149272 B2 JP5149272 B2 JP 5149272B2
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/45519—Inert gas curtains
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
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Description
基板-AH+MLx→基板-AMLx-1+HL (1)
ここで、HLは反応副産物である。反応の間、初期の表面リガンドAHが消費され、表面はLリガンドで覆われ、それ以上金属前駆体MLxと反応できなくなる。したがって、反応は表面上の初期のAHリガンドが全部AMLx-1種で置き換えられたときに自己終結する。反応段階のあとには典型的には不活性ガス・パージ段階が続き、他の前駆体の別個の導入に先立ってチェンバーから余剰の金属前駆体をなくす。
基板-A-ML+AHY→基板-A-M-AH+HL (2)
これは基板をもとのAHに覆われた状態に変換する。(ここで、簡単のため、化学反応は平衡とされていない。)所望の追加的要素Aは膜に組み込まれ、望まれないリガンドLは揮発性の副産物として排除される。いま一度、反応が反応性部位(今回はLで終端された部位)を消費し、基板上の反応性部位が完全に枯渇したら自己終結する。次いで第二の分子前駆体は、第二のパージ段階において不活性のパージガスを流すことによって堆積チェンバーから除去される。
1.MLx反応;
2.MLxパージ;
3.AHy反応;および
4.AHyパージ、次いで段階1.に戻る
をもつサイクルである。
τ=VP/Q (3)
となる。
(a)少なくとも第一、第二および第三の気相材料を含む複数の気相材料を提供する段階であって、第一および第二の気相材料は互いと反応性があって、第一または第二の気相材料の一方が基板表面上にあるとき、第一または第二の気相材料の他方が反応して基板上に少なくとも1原子層の材料を堆積させ、第三の気相材料は第一または第二の気相材料との反応に関しては不活性である、段階と;
(b)材料の薄膜堆積にかけられるべき基板を提供する段階と;
(c)第一、第二および第三の気相材料をそれぞれ複数の細長いチャネルに流す段階であって、各チャネルは実質的に平行に長さ方向に延在し、チャネルは第一、第二および第三の気相材料のためのそれぞれ少なくとも第一、第二および第三の出力チャネルを含み、ここで、各チャネルは第一、第二または第三の気相材料の対応するものの流れを、基板表面に実質的に平行な、実質的にそのチャネルの長さ方向に沿って、好ましくは基板表面から1mm未満の距離で、方向付ける段階とを有する。
流れ調量器85:ジエチル亜鉛バブラー流れへ
流れ調量器86:トリメチルアルミニウム・バブラー流れへ
流れ調量器87:金属前駆体希釈流れへ。
流れ調量器88:水バブラーへ
流れ調量器89:酸化剤希釈流れへ
流れ調量器91:空気流れへ。
本発明を使って製作された製作デバイスのトランジスタ特性決定は、ヒューレット・パッカードHP4156(登録商標)パラメータ解析器を用いて実行された。
Id=(W/2L)μCox(Vg−Vth)2
ここで、WおよびLはそれぞれチャネル幅および長さである。Coxは誘電体層の静電容量で、これは誘電体の厚さおよびその材料の誘電定数の関数である。この式が与えられて、飽和電界効果移動度は、√Id対Vg曲線の直線状の部分への直線あてはめから抽出された。閾値電圧Vthはこの直線あてはめのx切片である。
製作されたデバイスの降伏電圧特性決定は、ヒューレット・パッカードHP4156パラメータ解析器を用いて実行された。
以下の例の酸化アルミニウム膜の厚さは、J. A. WOOLAM ALPHA-SE白色光偏光計〔エリプソメータ〕を使って測定された。取得されたデータは、調査対象の層がコーシー分散モデルによって表されるモデルにあてはめられた。モデルあてはめの出力が膜厚および屈折率を与える。
この例は、作業(working)薄膜トランジスタを生産するために使われる本発明に基づく酸化亜鉛半導体膜の生成を示す。この構造では、デバイスのゲートは重度にドーピングされたシリコン・ウェーハであり、絶縁体は酸化亜鉛半導体膜の堆積に先立って前記シリコン・ウェーハ上に熱プロセスによって成長させられた二酸化ケイ素の膜である。
この例は、本発明に基づく酸化アルミニウム膜の生成を示しており、良好な降伏電圧をもつ高品質の絶縁膜を作成する能力を例証する。この構造では、裸のシリコン・ウェーハが一つの電極として使用され、その上に上記の本発明の装置を使って酸化アルミニウムの膜が成長させられる。
この例は、重度にドーピングされたシリコンをゲート材料として使って、しかしその後、Al2O3を誘電体として、ZnOを半導体として使っての、作業トランジスタ・デバイスの生産を示す。ここで、後者の材料はいずれも本発明を使って堆積される。
この例は、重度にドーピングされたシリコンをゲート材料として使って、しかしその後、Al2O3を誘電体として、ZnOを半導体として使っての、作業トランジスタ・デバイスの生産を示す。ここで、後者の材料はいずれも本発明を使って堆積される。ある範囲の温度にわたって有用なデバイスを生産する能力を例証するために堆積温度の変動を加えている。
この例は、ガラス基板上での酸化アルミニウム膜の生成を示し、多様な基板が本発明において使用できることを例証する。酸化アルミニウム膜がまず次の条件に従って堆積された。
この例は、インジウム・スズ酸化物をゲート材料として使って、しかしその後、Al2O3を誘電体として、ZnOを半導体として使っての、作業トランジスタ・デバイスの生産を示す。ここで、後者の材料はいずれも本願に記載される発明を使って堆積される。酸化アルミニウム膜がまず次の条件に従って堆積させられる。
この例は、本発明に従って伝導性材料を生成する能力を示す。導体はアルミニウム・ドーピングされた酸化亜鉛である。フィルムは次の表に示されるように、ジエチル亜鉛およびトリメチルアルミニウムの同時追加によって成長された。
12 出力チャネル
14、16、18 ガス取り入れポート
20 基板
22 仕切り
24 ガス出力ポート
26 排気ポート
28a、28b、28c ガス供給
30 アクチュエータ
32 供給ライン
36 出力面
38 向け直しプレート
40 開口
42 仕切りプレート
44 送達プレート
46a、46b、46c ダクト
48 向け直しチェンバー
50 チェンバー
52 輸送モーター
54 輸送サブプロセス
56 制御論理プロセッサ
58 バッフル
60 原子層堆積(ALD)プロセス
62 ウェブ・コンベヤー
64 配送マニホールド輸送
66 ウェブ基板
70 原子層堆積(ALD)プロセス
72 拡散層
74 基板支持部
81 窒素ガス流れ
82、83、84 ガス・バブラー
85、86、87、88、89、91、94 流れ調量器
90 空気の流れ
92 金属前駆体流れ
93 酸化剤含有流れ
95 窒素パージ流れ
96 ギャップ
97 例示的な基板
98 矢印
D 距離
F1、F2、F3、F4、FI、FO、FM、FE ガスの流れ
H 高さ
I 不活性気相材料
L チャネル長さ
M 第二の反応物気相材料
O 第一の反応物気相材料
R 矢印
W チャネル幅
Claims (6)
- 基板上に薄膜材料を堆積するプロセスであって、ガスの流れが前記基板の表面に実質的に平行でありかつ互いに実質的に平行になるよう一連のガス流れを複数の細長いチャネルに沿って同時に向け、それによりガス流れが隣接する細長いチャネルの方向に流れることが実質的に防止される段階を有しており、前記一連のガス流れは順に、少なくとも第一の反応性気相材料、不活性パージガスおよび第二の反応性気相材料を含み、これが任意的に複数回繰り返され、前記第一の反応性気相材料は前記第二の反応性気相材料を用いて処理された基板表面と反応できる、プロセス。
- 前記ガス流れが配送マニホールドによって提供され、前記配送マニホールドは、前記基板に近接して前記基板の上方に平行に位置された一連の開かれた細長い出力チャネルを平面図における前記基板に面して有しており、前記配送マニホールドの面は堆積にかけられる前記基板の表面から1mm以内離間されている、請求項1記載のプロセス。
- 基板上への薄膜堆積のための堆積プロセスであって:
(a)少なくとも第一、第二および第三の気相材料を含む複数の気相材料を提供する段階であって、第一および第二の気相材料は互いと反応性があって、第一または第二の気相材料の一方が基板表面上にあるとき、第一または第二の気相材料の他方が反応して基板上に少なくとも材料の一層を堆積させ、第三の気相材料は第一または第二の気相材料との反応に関しては不活性である、段階と;
(b)材料の薄膜堆積にかけられるべき基板を提供する段階と;
(c)第一、第二および第三の気相材料をそれぞれ複数の開かれた細長い出力チャネルに流す段階とを有しており、各出力チャネルは実質的に平行に長さ方向に延在し、出力チャネルはそれぞれ第一、第二および第三の気相材料のための少なくとも第一、第二および第三の出力チャネルを含み、各出力チャネルは出力ポートを有し、ここで、対応する気相材料の流れを提供するために使われる各出力チャネルは、第一、第二および第三の入口ポートと気相の流れの連絡があり、
細長い出力チャネルのそれぞれは、第一、第二または第三の気相材料のうち対応するものの流れを、その出力チャネルの長さ方向に沿って、その出力チャネルの端のほうに向かわせ、それにより気相材料は前記出力ポートからはその出力チャネルの長さに沿って変位した位置においてその出力チャネルから排気される、
プロセス。 - 前記複数の開かれた細長い出力チャネルが配送マニホールド内にあり、前記基板が、あらかじめ設計された近接さで、前記配送マニホールドの出力面に面しており、前記出力面は平面図において前記開かれた細長い出力チャネルを含む、請求項3記載のプロセス。
- 当該プロセスの動作の間、基板支持部もしくは前記配送マニホールドに取り付けられたアクチュエータまたはその両方が、前記あらかじめ設計された近接さを維持しながら、前記出力面と前記基板の表面との間の相対的な動きを提供できる、請求項4記載のプロセス。
- 配送マニホールドの出力面を使って前記一連のガス流れを前記基板の表面に実質的に平行に向ける段階を有しており、前記配送マニホールドの前記出力面と前記基板の表面との間の距離が0.4mm以下である、請求項1記載のプロセス。
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EP1999295B1 (en) | 2013-08-07 |
WO2007126585A3 (en) | 2008-04-24 |
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KR20080109002A (ko) | 2008-12-16 |
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