CN109534404B - 表面改性氧化钨纳米材料的制备方法及其产品和应用 - Google Patents
表面改性氧化钨纳米材料的制备方法及其产品和应用 Download PDFInfo
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 13
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical class [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 238000002360 preparation method Methods 0.000 title abstract description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 239000002105 nanoparticle Substances 0.000 claims abstract description 8
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 7
- 239000002052 molecular layer Substances 0.000 claims abstract description 6
- KVKFRMCSXWQSNT-UHFFFAOYSA-N n,n'-dimethylethane-1,2-diamine Chemical compound CNCCNC KVKFRMCSXWQSNT-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002243 precursor Substances 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 7
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 11
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
本发明提供一种表面改性氧化钨纳米材料的制备方法，所述方法包括：在纳米氧化钨表面，利用原子层沉积修饰一层SnO纳米层，形成异质结结构，能够有效提升WO3纳米材料的气体传感性能，所用的前驱源分别为N,N'‑二甲基乙二胺亚锡和水，沉积温度为150℃，沉积厚度为2‑10nm。该材料利用原子层沉积在WO3纳米颗粒表面沉积SnO层，形成WO3/SnO异质结，大幅提升了其对甲醛的气敏性能。
Description
技术领域
本发明属于材料化学技术领域，涉及一种表面改性氧化钨纳米材料的制备方法及其产品和应用氧。钨异质结结构纳米材料的制备方法，该材料利用原子层沉积在WO3纳米颗粒表面沉积SnO层，形成WO3/SnO异质结，大幅提升了其对甲醛的气敏性能。
背景技术
在半导体气敏材料研究领域，氧化钨（WO3）因其易于调控，选择性强、稳定性好、灵敏度高等优点，长期成为研究热点。WO3纳米气敏材料的气敏机理可以用耗尽层模型进行解释。WO3表面的氧空穴可以成为导带的电子授体，从而使该材料成为n型半导体。在实际应用中，通过形成异质结可以提高其气敏性能。当两种不同的半导体材料接触以后，由于费米能级不同，界面处的费米能级会产生相对移动直至平衡，电荷转移通常会在界面处形成电荷耗尽层、势垒，而这种独特的特性会提高传感器的气敏响应。
发明内容
针对现有技术的不足，本发明目的在于提供一种表面改性氧化钨纳米材料的制备方法。
本发明的再一目的在于：提供一种上述方法制备的表面改性氧化钨纳米材料产品。
本发明的又一目的在于：提供一种上述产品的应用。
本发明目的通过下述方案实现：一种表面改性氧化钨纳米材料的制备方法，其特征在于利用原子层沉积技术在纳米WO3颗粒表面沉积SnO纳米层，形成异质结结构。
所述的利用原子层沉积技术在纳米WO3颗粒表面沉积SnO纳米层，所用的前驱源分别为N,N'-二甲基乙二胺亚锡和水，沉积温度为150℃，沉积厚度为2-10nm。
本发明提供一种表面改性氧化钨纳米材料，根据上述所述方法制备得到。
本发明提供一种表面改性氧化钨纳米材料在甲醛气体检测中的应用。
本发明提供一种简单的WO3异质结的方法，可大幅提高WO3纳米材料的气敏性能，且制备工艺简单，重复性、均匀性好，具有较为广泛的应用价值。该材料利用原子层沉积在WO3纳米颗粒表面沉积SnO层，形成WO3/SnO异质结，大幅提升了其对甲醛的气敏性能，大幅度降低了响应温度，提升了灵敏度。
附图说明
图1为实施例1所制备的WO3异质结纳米颗粒的气敏性能图。
具体实施方式
实施例1
（1）利用N,N'-二甲基乙二胺亚锡和水作为前驱源，在150℃条件下，利用原子层沉积技术在纳米WO3颗粒表面沉积SnO纳米层，沉积厚度为2nm。
实施例2
（1）利用N,N'-二甲基乙二胺亚锡和水作为前驱源，在150℃条件下，利用原子层沉积技术在纳米WO3颗粒表面沉积SnO纳米层，沉积厚度为5nm。
实施例3
（1）利用N,N'-二甲基乙二胺亚锡和水作为前驱源，在150℃条件下，利用原子层沉积技术在纳米WO3颗粒表面沉积SnO纳米层，沉积厚度为10nm。
本上述实施例1-3制得的粉体分散涂于六脚陶瓷管气敏测试元件上，测试对不同浓度为甲醛的响应，工作温度为160 ℃。
上述的对实施例的描述是为便于该技术领域的普通技术人员能理解和应用本发明。熟悉本领域技术的人员显然可以容易地对这些实施例做出各种修改，并把在此说明的一般原理应用到其它实施例中而不必经过创造性的劳动。因此，本发明不限于这里的实施例，本领域技术人员根据本发明的揭示，对于本发明做出的改进和修改都应该在本发明的保护范围之内。
Claims (3)
1.一种表面改性氧化钨纳米材料的制备方法，其特征在于利用原子层沉积技术在纳米WO3颗粒表面沉积SnO纳米层，形成异质结结构；
所用的前驱源分别为N,N'-二甲基乙二胺亚锡和水，沉积温度为150℃，沉积厚度为2-10nm。
2.一种表面改性氧化钨纳米材料，其特征在于根据权利要求1所述方法制备得到。
3.一种根据权利要求2所述表面改性氧化钨纳米材料在甲醛气体检测中的应用。
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| CN101294928A (zh) * | 2008-06-13 | 2008-10-29 | 北京化工大学 | MoO3－SnO2基掺杂的纳米复合金属氧化物及其制备方法 |
| CN101415860A (zh) * | 2006-03-29 | 2009-04-22 | 伊斯曼柯达公司 | 原子层沉积方法 |
| CN108400300A (zh) * | 2018-02-11 | 2018-08-14 | 长沙理工大学 | 一种二氧化钛/氮掺杂碳包覆SnO2复合电极材料及其制备方法 |
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| CN101415860A (zh) * | 2006-03-29 | 2009-04-22 | 伊斯曼柯达公司 | 原子层沉积方法 |
| CN101294928A (zh) * | 2008-06-13 | 2008-10-29 | 北京化工大学 | MoO3－SnO2基掺杂的纳米复合金属氧化物及其制备方法 |
| CN108400300A (zh) * | 2018-02-11 | 2018-08-14 | 长沙理工大学 | 一种二氧化钛/氮掺杂碳包覆SnO2复合电极材料及其制备方法 |
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