JP2011501877A5 - - Google Patents

Download PDF

Info

Publication number
JP2011501877A5
JP2011501877A5 JP2010526931A JP2010526931A JP2011501877A5 JP 2011501877 A5 JP2011501877 A5 JP 2011501877A5 JP 2010526931 A JP2010526931 A JP 2010526931A JP 2010526931 A JP2010526931 A JP 2010526931A JP 2011501877 A5 JP2011501877 A5 JP 2011501877A5
Authority
JP
Japan
Prior art keywords
deposition
thin film
substrate
gas
gas material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010526931A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011501877A (ja
Filing date
Publication date
Priority claimed from US11/861,455 external-priority patent/US7972898B2/en
Application filed filed Critical
Publication of JP2011501877A publication Critical patent/JP2011501877A/ja
Publication of JP2011501877A5 publication Critical patent/JP2011501877A5/ja
Pending legal-status Critical Current

Links

JP2010526931A 2007-09-26 2008-09-24 ドープ型酸化亜鉛の形成方法 Pending JP2011501877A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/861,455 US7972898B2 (en) 2007-09-26 2007-09-26 Process for making doped zinc oxide
PCT/US2008/011062 WO2009042144A2 (en) 2007-09-26 2008-09-24 Process for making doped zinc oxide

Publications (2)

Publication Number Publication Date
JP2011501877A JP2011501877A (ja) 2011-01-13
JP2011501877A5 true JP2011501877A5 (enExample) 2012-11-29

Family

ID=40130580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526931A Pending JP2011501877A (ja) 2007-09-26 2008-09-24 ドープ型酸化亜鉛の形成方法

Country Status (6)

Country Link
US (1) US7972898B2 (enExample)
EP (1) EP2191499B1 (enExample)
JP (1) JP2011501877A (enExample)
CN (1) CN102017104B (enExample)
TW (1) TW200924061A (enExample)
WO (1) WO2009042144A2 (enExample)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US20080166880A1 (en) * 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
US8624050B2 (en) * 2007-06-22 2014-01-07 General Electric Company Solution process for transparent conductive oxide coatings
GB0718839D0 (en) * 2007-09-26 2007-11-07 Eastman Kodak Co method of patterning a mesoporous nano particulate layer
US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
KR101320229B1 (ko) * 2009-07-27 2013-10-21 가부시키가이샤 고베 세이코쇼 배선 구조 및 배선 구조를 구비한 표시 장치
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
KR101730347B1 (ko) 2009-09-16 2017-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101843558B1 (ko) * 2009-10-09 2018-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 시프트 레지스터, 표시 장치, 및 그 구동 방법
US20110097492A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold operating state management system
US8143515B2 (en) * 2009-12-15 2012-03-27 Primestar Solar, Inc. Cadmium telluride thin film photovoltaic devices and methods of manufacturing the same
US8252618B2 (en) * 2009-12-15 2012-08-28 Primestar Solar, Inc. Methods of manufacturing cadmium telluride thin film photovoltaic devices
JP2011210778A (ja) * 2010-03-29 2011-10-20 Dainippon Printing Co Ltd 薄膜トランジスタ基板
TWI423437B (zh) * 2010-04-07 2014-01-11 Au Optronics Corp 有機發光二極體顯示器之畫素結構及其製作方法
CN102021535A (zh) * 2010-12-21 2011-04-20 上海纳米技术及应用国家工程研究中心有限公司 铝掺杂氧化锌透明导电薄膜的低温制备方法
CN102051594B (zh) * 2011-01-28 2012-07-04 上海交通大学 原子层沉积制备Al掺杂ZnO透明导电薄膜的方法
US8716073B2 (en) * 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
CN102503162A (zh) * 2011-11-01 2012-06-20 昆明理工大学 一种Ag-Al共掺杂p型ZnO薄膜的制备方法
KR102097171B1 (ko) 2012-01-20 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
KR101980195B1 (ko) * 2012-05-16 2019-05-21 삼성전자주식회사 황 도핑 징크옥시 나이트라이드 채널층을 가진 트랜지스터 및 그 제조방법
KR102113160B1 (ko) 2012-06-15 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101975929B1 (ko) * 2012-06-29 2019-05-09 삼성전자주식회사 질산화물 채널층을 구비한 트랜지스터 및 그 제조방법
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
JP6220597B2 (ja) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
US9929276B2 (en) * 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014024808A1 (en) 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5956292B2 (ja) * 2012-09-05 2016-07-27 浜松ホトニクス株式会社 電子管
JP6144470B2 (ja) 2012-09-05 2017-06-07 浜松ホトニクス株式会社 電子管及び電子管の製造方法
KR101454190B1 (ko) * 2012-12-07 2014-11-03 엘지디스플레이 주식회사 어레이 기판 및 이의 제조방법
CN103866264B (zh) * 2012-12-10 2017-05-10 中国科学院微电子研究所 一种磷掺杂氧化锌薄膜的制备方法
CN103866277B (zh) * 2012-12-11 2017-05-10 中国科学院微电子研究所 一种原子层沉积制备双受主共掺氧化锌薄膜的方法
CN103866279B (zh) * 2012-12-11 2017-06-20 中国科学院微电子研究所 原子层沉积制备N‑As共掺的氧化锌薄膜的方法
CN103866265B (zh) * 2012-12-11 2016-12-21 中国科学院微电子研究所 基于氮的双受主共掺氧化锌薄膜的制备方法
CN103866280B (zh) * 2012-12-11 2016-10-05 中国科学院微电子研究所 一种原子层沉积制备施主-受主共掺氧化锌薄膜的方法
CN103866276B (zh) * 2012-12-11 2016-08-03 中国科学院微电子研究所 原子层沉积制备共掺的氧化锌薄膜的方法
CN103866275B (zh) * 2012-12-11 2016-10-05 中国科学院微电子研究所 原子层沉积的共掺氧化锌薄膜的制备方法
CN103866289B (zh) * 2012-12-11 2017-03-29 中国科学院微电子研究所 一种p‑n共掺氧化锌薄膜的制备方法
CN103866268B (zh) * 2012-12-11 2018-07-13 中国科学院微电子研究所 基于氮的施主-受主共掺氧化锌薄膜的制备方法
CN103866284A (zh) * 2012-12-14 2014-06-18 中国科学院微电子研究所 一种氧化锌薄膜的制备方法
US9175389B2 (en) * 2012-12-21 2015-11-03 Intermolecular, Inc. ALD process window combinatorial screening tool
WO2014110173A1 (en) * 2013-01-09 2014-07-17 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University High-performance amorphous semiconductors
US20140206137A1 (en) * 2013-01-23 2014-07-24 David H. Levy Deposition system for thin film formation
JP5988041B2 (ja) * 2013-02-14 2016-09-07 東京エレクトロン株式会社 ZnO含有膜成長用の原料供給源、ZnO含有膜の製造装置、製造方法及びZnO含有膜を含む発光素子
US20140338597A1 (en) * 2013-05-16 2014-11-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Mask Plate for Glue Coating and Manufacturing Method Thereof
FI126043B (en) * 2013-06-27 2016-06-15 Beneq Oy Method and device for coating a surface of a substrate
CN103628045B (zh) * 2013-12-02 2015-09-23 华中科技大学 一种用于制作原子层沉积膜的可拆卸喷头及装置
US9245742B2 (en) 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
US9478419B2 (en) * 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
FI126894B (en) * 2014-12-22 2017-07-31 Beneq Oy Nozzle head, apparatus and method for coating a substrate surface
CN105858712B (zh) * 2014-12-26 2019-09-06 神华(北京)光伏科技研发有限公司 光学带隙可调的氧化锌纳米柱阵列材料的制备方法及该方法得到的氧化锌纳米柱阵列材料
CN105883900B (zh) * 2014-12-29 2019-04-12 神华(北京)光伏科技研发有限公司 一种操控氧化锌纳米柱阵列的密度和光学带隙的方法
JP2016148574A (ja) * 2015-02-12 2016-08-18 セイコーエプソン株式会社 電子部品搬送装置および電子部品検査装置
US10490475B2 (en) 2015-06-03 2019-11-26 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation after oxide removal
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
US9741815B2 (en) 2015-06-16 2017-08-22 Asm Ip Holding B.V. Metal selenide and metal telluride thin films for semiconductor device applications
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device
US10150282B2 (en) * 2016-10-14 2018-12-11 Xerox Corporation System and method for additive manufacture of chemical delivery devices using halftone screening
US10400332B2 (en) * 2017-03-14 2019-09-03 Eastman Kodak Company Deposition system with interlocking deposition heads
CN107390956B (zh) * 2017-07-31 2021-01-29 上海天马微电子有限公司 一种触摸屏、显示面板、显示装置
EP3705266B1 (de) * 2019-03-08 2022-08-17 Ivoclar Vivadent AG Verfahren zum additiven aufbau eines dreidimensionalen produkts
WO2020185401A1 (en) * 2019-03-11 2020-09-17 Applied Materials, Inc. Lid assembly apparatus and methods for substrate processing chambers
KR20210046567A (ko) * 2019-10-17 2021-04-28 에이에스엠 아이피 홀딩 비.브이. 인듐 게르마늄 아연 산화물의 원자층 증착
CN112687521A (zh) * 2019-10-17 2021-04-20 Asm Ip 控股有限公司 氧化铟镓锌的原子层沉积
CN113621942A (zh) * 2020-05-06 2021-11-09 中国科学院微电子研究所 一种铝掺杂氧化镓膜及其制备方法
TW202314018A (zh) * 2021-06-21 2023-04-01 荷蘭商Asm Ip私人控股有限公司 用於形成包含氧化銦鎵鋅的層之反應器系統及方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI57975C (fi) * 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US4462332A (en) * 1982-04-29 1984-07-31 Energy Conversion Devices, Inc. Magnetic gas gate
JP3079830B2 (ja) * 1992-07-24 2000-08-21 富士電機株式会社 薄膜光電素子の製造方法および製造装置ならびにプラズマcvd法およびプラズマcvd装置
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
DE19907704A1 (de) * 1999-02-23 2000-08-24 Bayer Ag Nanopartikuläres, redispergierbares Fällungszinkoxid
AU2002306436A1 (en) * 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
JP2003179242A (ja) * 2001-12-12 2003-06-27 National Institute Of Advanced Industrial & Technology 金属酸化物半導体薄膜及びその製法
US7264889B2 (en) * 2002-04-24 2007-09-04 Eastman Kodak Company Stable electroluminescent device
US20050084610A1 (en) * 2002-08-13 2005-04-21 Selitser Simon I. Atmospheric pressure molecular layer CVD
US20040065255A1 (en) * 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US7135369B2 (en) * 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7121912B2 (en) * 2004-01-26 2006-10-17 Eastman Kodak Company Method of improving stability in OLED devices
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7160819B2 (en) * 2005-04-25 2007-01-09 Sharp Laboratories Of America, Inc. Method to perform selective atomic layer deposition of zinc oxide
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7413982B2 (en) * 2006-03-29 2008-08-19 Eastman Kodak Company Process for atomic layer deposition
US20070269750A1 (en) * 2006-05-19 2007-11-22 Eastman Kodak Company Colored masking for forming transparent structures
US8906490B2 (en) * 2006-05-19 2014-12-09 Eastman Kodak Company Multicolor mask
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US20080166880A1 (en) * 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
US20090081356A1 (en) * 2007-09-26 2009-03-26 Fedorovskaya Elena A Process for forming thin film encapsulation layers
US7572686B2 (en) * 2007-09-26 2009-08-11 Eastman Kodak Company System for thin film deposition utilizing compensating forces
US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
US7851380B2 (en) * 2007-09-26 2010-12-14 Eastman Kodak Company Process for atomic layer deposition
US8017183B2 (en) * 2007-09-26 2011-09-13 Eastman Kodak Company Organosiloxane materials for selective area deposition of inorganic materials
US8030212B2 (en) * 2007-09-26 2011-10-04 Eastman Kodak Company Process for selective area deposition of inorganic materials
US8153352B2 (en) * 2007-11-20 2012-04-10 Eastman Kodak Company Multicolored mask process for making display circuitry
US7846644B2 (en) * 2007-11-20 2010-12-07 Eastman Kodak Company Photopatternable deposition inhibitor containing siloxane
US8221964B2 (en) * 2007-11-20 2012-07-17 Eastman Kodak Company Integrated color mask

Similar Documents

Publication Publication Date Title
JP2011501877A5 (enExample)
JP2010541237A5 (enExample)
JP2010541159A5 (enExample)
JP2010517292A5 (enExample)
TWI754775B (zh) 利用循環沉積在基材上沉積金屬硫屬化物之方法
US11814727B2 (en) Systems and methods for atomic layer deposition
CN108474134B (zh) 一种制备二维材料的方法
CN104364419A (zh) 通过原子层沉积来涂覆衬底卷式基材
JP2011506758A5 (enExample)
TW201239952A (en) Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
US20110132263A1 (en) System and Method for Depositing a Material on a Substrate
TW201108304A (en) Continuous feed chemical vapor deposition system
US20110132262A1 (en) System and Method for Depositing a Material on a Substrate
JP2018510968A5 (enExample)
CN102304700A (zh) 一种掺氮氧化锌薄膜的制备方法
JP2011521468A (ja) 高スループットの電子層堆積のための装置および方法
US9490120B2 (en) Vapor transport deposition method and system for material co-deposition
Maydannik et al. Spatial atomic layer deposition: Performance of low temperature H2O and O3 oxidant chemistry for flexible electronics encapsulation
US11545358B2 (en) Method of forming transition metal dichalcogenide thin film
JP2004204339A (ja) 処理装置及び処理方法
TW201350614A (zh) 用於化學氣相沉積及原子層沉積之帶有延長噴嘴的裝置及使用方法
CN101432457B (zh) 大气压化学气相淀积
Toma et al. Thin film deposition techniques: a comprehensive review
He ALD: Atomic layer deposition–Precise and conformal coating for better performance
Ozgit-Akgun et al. Fabrication of flexible polymer–GaN core–shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition