JP2011501877A5 - - Google Patents
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- Publication number
- JP2011501877A5 JP2011501877A5 JP2010526931A JP2010526931A JP2011501877A5 JP 2011501877 A5 JP2011501877 A5 JP 2011501877A5 JP 2010526931 A JP2010526931 A JP 2010526931A JP 2010526931 A JP2010526931 A JP 2010526931A JP 2011501877 A5 JP2011501877 A5 JP 2011501877A5
- Authority
- JP
- Japan
- Prior art keywords
- deposition
- thin film
- substrate
- gas
- gas material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims 34
- 239000000463 material Substances 0.000 claims 26
- 238000000034 method Methods 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 16
- 238000000151 deposition Methods 0.000 claims 15
- 230000008021 deposition Effects 0.000 claims 14
- 239000010409 thin film Substances 0.000 claims 14
- 239000004065 semiconductor Substances 0.000 claims 8
- 229960001296 zinc oxide Drugs 0.000 claims 8
- 239000011787 zinc oxide Substances 0.000 claims 8
- 150000001875 compounds Chemical class 0.000 claims 7
- 238000010926 purge Methods 0.000 claims 6
- 238000000231 atomic layer deposition Methods 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 4
- 239000002243 precursor Substances 0.000 claims 4
- 238000000427 thin-film deposition Methods 0.000 claims 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 3
- 239000002019 doping agent Substances 0.000 claims 3
- 229910052725 zinc Inorganic materials 0.000 claims 3
- 239000011701 zinc Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000000153 supplemental effect Effects 0.000 claims 2
- 238000002441 X-ray diffraction Methods 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- JZPXQBRKWFVPAE-UHFFFAOYSA-N cyclopentane;indium Chemical compound [In].[CH]1[CH][CH][CH][CH]1 JZPXQBRKWFVPAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/861,455 US7972898B2 (en) | 2007-09-26 | 2007-09-26 | Process for making doped zinc oxide |
| PCT/US2008/011062 WO2009042144A2 (en) | 2007-09-26 | 2008-09-24 | Process for making doped zinc oxide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011501877A JP2011501877A (ja) | 2011-01-13 |
| JP2011501877A5 true JP2011501877A5 (enExample) | 2012-11-29 |
Family
ID=40130580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010526931A Pending JP2011501877A (ja) | 2007-09-26 | 2008-09-24 | ドープ型酸化亜鉛の形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7972898B2 (enExample) |
| EP (1) | EP2191499B1 (enExample) |
| JP (1) | JP2011501877A (enExample) |
| CN (1) | CN102017104B (enExample) |
| TW (1) | TW200924061A (enExample) |
| WO (1) | WO2009042144A2 (enExample) |
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| US20080166880A1 (en) * | 2007-01-08 | 2008-07-10 | Levy David H | Delivery device for deposition |
| US8624050B2 (en) * | 2007-06-22 | 2014-01-07 | General Electric Company | Solution process for transparent conductive oxide coatings |
| GB0718839D0 (en) * | 2007-09-26 | 2007-11-07 | Eastman Kodak Co | method of patterning a mesoporous nano particulate layer |
| US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
| US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
| GB0803702D0 (en) | 2008-02-28 | 2008-04-09 | Isis Innovation | Transparent conducting oxides |
| KR101320229B1 (ko) * | 2009-07-27 | 2013-10-21 | 가부시키가이샤 고베 세이코쇼 | 배선 구조 및 배선 구조를 구비한 표시 장치 |
| GB0915376D0 (en) | 2009-09-03 | 2009-10-07 | Isis Innovation | Transparent conducting oxides |
| KR101730347B1 (ko) | 2009-09-16 | 2017-04-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR101843558B1 (ko) * | 2009-10-09 | 2018-03-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 시프트 레지스터, 표시 장치, 및 그 구동 방법 |
| US20110097492A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold operating state management system |
| US8143515B2 (en) * | 2009-12-15 | 2012-03-27 | Primestar Solar, Inc. | Cadmium telluride thin film photovoltaic devices and methods of manufacturing the same |
| US8252618B2 (en) * | 2009-12-15 | 2012-08-28 | Primestar Solar, Inc. | Methods of manufacturing cadmium telluride thin film photovoltaic devices |
| JP2011210778A (ja) * | 2010-03-29 | 2011-10-20 | Dainippon Printing Co Ltd | 薄膜トランジスタ基板 |
| TWI423437B (zh) * | 2010-04-07 | 2014-01-11 | Au Optronics Corp | 有機發光二極體顯示器之畫素結構及其製作方法 |
| CN102021535A (zh) * | 2010-12-21 | 2011-04-20 | 上海纳米技术及应用国家工程研究中心有限公司 | 铝掺杂氧化锌透明导电薄膜的低温制备方法 |
| CN102051594B (zh) * | 2011-01-28 | 2012-07-04 | 上海交通大学 | 原子层沉积制备Al掺杂ZnO透明导电薄膜的方法 |
| US8716073B2 (en) * | 2011-07-22 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing oxide semiconductor film and method for manufacturing semiconductor device |
| CN102503162A (zh) * | 2011-11-01 | 2012-06-20 | 昆明理工大学 | 一种Ag-Al共掺杂p型ZnO薄膜的制备方法 |
| KR102097171B1 (ko) | 2012-01-20 | 2020-04-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9735280B2 (en) | 2012-03-02 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film |
| KR101980195B1 (ko) * | 2012-05-16 | 2019-05-21 | 삼성전자주식회사 | 황 도핑 징크옥시 나이트라이드 채널층을 가진 트랜지스터 및 그 제조방법 |
| KR102113160B1 (ko) | 2012-06-15 | 2020-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101975929B1 (ko) * | 2012-06-29 | 2019-05-09 | 삼성전자주식회사 | 질산화물 채널층을 구비한 트랜지스터 및 그 제조방법 |
| JP6134598B2 (ja) | 2012-08-02 | 2017-05-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6220597B2 (ja) | 2012-08-10 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9929276B2 (en) * | 2012-08-10 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2014024808A1 (en) | 2012-08-10 | 2014-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9245958B2 (en) | 2012-08-10 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5956292B2 (ja) * | 2012-09-05 | 2016-07-27 | 浜松ホトニクス株式会社 | 電子管 |
| JP6144470B2 (ja) | 2012-09-05 | 2017-06-07 | 浜松ホトニクス株式会社 | 電子管及び電子管の製造方法 |
| KR101454190B1 (ko) * | 2012-12-07 | 2014-11-03 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조방법 |
| CN103866264B (zh) * | 2012-12-10 | 2017-05-10 | 中国科学院微电子研究所 | 一种磷掺杂氧化锌薄膜的制备方法 |
| CN103866277B (zh) * | 2012-12-11 | 2017-05-10 | 中国科学院微电子研究所 | 一种原子层沉积制备双受主共掺氧化锌薄膜的方法 |
| CN103866279B (zh) * | 2012-12-11 | 2017-06-20 | 中国科学院微电子研究所 | 原子层沉积制备N‑As共掺的氧化锌薄膜的方法 |
| CN103866265B (zh) * | 2012-12-11 | 2016-12-21 | 中国科学院微电子研究所 | 基于氮的双受主共掺氧化锌薄膜的制备方法 |
| CN103866280B (zh) * | 2012-12-11 | 2016-10-05 | 中国科学院微电子研究所 | 一种原子层沉积制备施主-受主共掺氧化锌薄膜的方法 |
| CN103866276B (zh) * | 2012-12-11 | 2016-08-03 | 中国科学院微电子研究所 | 原子层沉积制备共掺的氧化锌薄膜的方法 |
| CN103866275B (zh) * | 2012-12-11 | 2016-10-05 | 中国科学院微电子研究所 | 原子层沉积的共掺氧化锌薄膜的制备方法 |
| CN103866289B (zh) * | 2012-12-11 | 2017-03-29 | 中国科学院微电子研究所 | 一种p‑n共掺氧化锌薄膜的制备方法 |
| CN103866268B (zh) * | 2012-12-11 | 2018-07-13 | 中国科学院微电子研究所 | 基于氮的施主-受主共掺氧化锌薄膜的制备方法 |
| CN103866284A (zh) * | 2012-12-14 | 2014-06-18 | 中国科学院微电子研究所 | 一种氧化锌薄膜的制备方法 |
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| WO2014110173A1 (en) * | 2013-01-09 | 2014-07-17 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | High-performance amorphous semiconductors |
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| US20140338597A1 (en) * | 2013-05-16 | 2014-11-20 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Mask Plate for Glue Coating and Manufacturing Method Thereof |
| FI126043B (en) * | 2013-06-27 | 2016-06-15 | Beneq Oy | Method and device for coating a surface of a substrate |
| CN103628045B (zh) * | 2013-12-02 | 2015-09-23 | 华中科技大学 | 一种用于制作原子层沉积膜的可拆卸喷头及装置 |
| US9245742B2 (en) | 2013-12-18 | 2016-01-26 | Asm Ip Holding B.V. | Sulfur-containing thin films |
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| CN105858712B (zh) * | 2014-12-26 | 2019-09-06 | 神华(北京)光伏科技研发有限公司 | 光学带隙可调的氧化锌纳米柱阵列材料的制备方法及该方法得到的氧化锌纳米柱阵列材料 |
| CN105883900B (zh) * | 2014-12-29 | 2019-04-12 | 神华(北京)光伏科技研发有限公司 | 一种操控氧化锌纳米柱阵列的密度和光学带隙的方法 |
| JP2016148574A (ja) * | 2015-02-12 | 2016-08-18 | セイコーエプソン株式会社 | 電子部品搬送装置および電子部品検査装置 |
| US10490475B2 (en) | 2015-06-03 | 2019-11-26 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation after oxide removal |
| US9711350B2 (en) | 2015-06-03 | 2017-07-18 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
| US9741815B2 (en) | 2015-06-16 | 2017-08-22 | Asm Ip Holding B.V. | Metal selenide and metal telluride thin films for semiconductor device applications |
| US9711396B2 (en) | 2015-06-16 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming metal chalcogenide thin films on a semiconductor device |
| US10150282B2 (en) * | 2016-10-14 | 2018-12-11 | Xerox Corporation | System and method for additive manufacture of chemical delivery devices using halftone screening |
| US10400332B2 (en) * | 2017-03-14 | 2019-09-03 | Eastman Kodak Company | Deposition system with interlocking deposition heads |
| CN107390956B (zh) * | 2017-07-31 | 2021-01-29 | 上海天马微电子有限公司 | 一种触摸屏、显示面板、显示装置 |
| EP3705266B1 (de) * | 2019-03-08 | 2022-08-17 | Ivoclar Vivadent AG | Verfahren zum additiven aufbau eines dreidimensionalen produkts |
| WO2020185401A1 (en) * | 2019-03-11 | 2020-09-17 | Applied Materials, Inc. | Lid assembly apparatus and methods for substrate processing chambers |
| KR20210046567A (ko) * | 2019-10-17 | 2021-04-28 | 에이에스엠 아이피 홀딩 비.브이. | 인듐 게르마늄 아연 산화물의 원자층 증착 |
| CN112687521A (zh) * | 2019-10-17 | 2021-04-20 | Asm Ip 控股有限公司 | 氧化铟镓锌的原子层沉积 |
| CN113621942A (zh) * | 2020-05-06 | 2021-11-09 | 中国科学院微电子研究所 | 一种铝掺杂氧化镓膜及其制备方法 |
| TW202314018A (zh) * | 2021-06-21 | 2023-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成包含氧化銦鎵鋅的層之反應器系統及方法 |
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| US7851380B2 (en) * | 2007-09-26 | 2010-12-14 | Eastman Kodak Company | Process for atomic layer deposition |
| US8017183B2 (en) * | 2007-09-26 | 2011-09-13 | Eastman Kodak Company | Organosiloxane materials for selective area deposition of inorganic materials |
| US8030212B2 (en) * | 2007-09-26 | 2011-10-04 | Eastman Kodak Company | Process for selective area deposition of inorganic materials |
| US8153352B2 (en) * | 2007-11-20 | 2012-04-10 | Eastman Kodak Company | Multicolored mask process for making display circuitry |
| US7846644B2 (en) * | 2007-11-20 | 2010-12-07 | Eastman Kodak Company | Photopatternable deposition inhibitor containing siloxane |
| US8221964B2 (en) * | 2007-11-20 | 2012-07-17 | Eastman Kodak Company | Integrated color mask |
-
2007
- 2007-09-26 US US11/861,455 patent/US7972898B2/en active Active
-
2008
- 2008-09-24 WO PCT/US2008/011062 patent/WO2009042144A2/en not_active Ceased
- 2008-09-24 EP EP08834208.4A patent/EP2191499B1/en not_active Not-in-force
- 2008-09-24 CN CN2008801091458A patent/CN102017104B/zh not_active Expired - Fee Related
- 2008-09-24 JP JP2010526931A patent/JP2011501877A/ja active Pending
- 2008-09-25 TW TW097136925A patent/TW200924061A/zh unknown
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