TW200924061A - Process for making doped zinc oxide - Google Patents
Process for making doped zinc oxide Download PDFInfo
- Publication number
- TW200924061A TW200924061A TW097136925A TW97136925A TW200924061A TW 200924061 A TW200924061 A TW 200924061A TW 097136925 A TW097136925 A TW 097136925A TW 97136925 A TW97136925 A TW 97136925A TW 200924061 A TW200924061 A TW 200924061A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- deposition
- gas
- thin film
- gaseous material
- Prior art date
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 238000000034 method Methods 0.000 title claims abstract description 129
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 69
- 230000008569 process Effects 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 229
- 239000000463 material Substances 0.000 claims abstract description 220
- 239000004065 semiconductor Substances 0.000 claims abstract description 133
- 239000010409 thin film Substances 0.000 claims abstract description 62
- 150000001875 compounds Chemical class 0.000 claims abstract description 32
- 229910052738 indium Inorganic materials 0.000 claims abstract description 31
- 239000011701 zinc Substances 0.000 claims abstract description 30
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 19
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000000153 supplemental effect Effects 0.000 claims abstract description 4
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 172
- 238000000151 deposition Methods 0.000 claims description 150
- 230000008021 deposition Effects 0.000 claims description 134
- 239000010408 film Substances 0.000 claims description 80
- 238000000231 atomic layer deposition Methods 0.000 claims description 72
- 239000002243 precursor Substances 0.000 claims description 62
- 230000033001 locomotion Effects 0.000 claims description 56
- 238000006243 chemical reaction Methods 0.000 claims description 46
- 238000004519 manufacturing process Methods 0.000 claims description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 20
- 239000002019 doping agent Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 18
- 238000011010 flushing procedure Methods 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 230000002829 reductive effect Effects 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 150000002472 indium compounds Chemical class 0.000 claims description 2
- 230000013011 mating Effects 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- UCAPPYMXFYHGEZ-UHFFFAOYSA-N methoxyindium Chemical compound CO[In] UCAPPYMXFYHGEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229960001296 zinc oxide Drugs 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 90
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 46
- 229910052751 metal Inorganic materials 0.000 description 42
- 239000002184 metal Substances 0.000 description 42
- 239000000376 reactant Substances 0.000 description 41
- 229910052757 nitrogen Inorganic materials 0.000 description 24
- 239000004020 conductor Substances 0.000 description 22
- 239000000126 substance Substances 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- -1 polyethylene terephthalate Polymers 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 238000004435 EPR spectroscopy Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 230000005669 field effect Effects 0.000 description 9
- 239000003446 ligand Substances 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 8
- 101000908015 Homo sapiens Putative inactive carboxylesterase 4 Proteins 0.000 description 7
- 102100023322 Putative inactive carboxylesterase 4 Human genes 0.000 description 7
- 229910000831 Steel Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 7
- 239000010959 steel Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000036962 time dependent Effects 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000003039 volatile agent Substances 0.000 description 3
- IPSRAFUHLHIWAR-UHFFFAOYSA-N zinc;ethane Chemical compound [Zn+2].[CH2-]C.[CH2-]C IPSRAFUHLHIWAR-UHFFFAOYSA-N 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Chemical class 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- SZEJQLSRYARYHS-UHFFFAOYSA-N dimethylindium Chemical compound C[In]C SZEJQLSRYARYHS-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- XBZYWSMVVKYHQN-MYPRUECHSA-N (4as,6as,6br,8ar,9r,10s,12ar,12br,14bs)-10-hydroxy-2,2,6a,6b,9,12a-hexamethyl-9-[(sulfooxy)methyl]-1,2,3,4,4a,5,6,6a,6b,7,8,8a,9,10,11,12,12a,12b,13,14b-icosahydropicene-4a-carboxylic acid Chemical compound C1C[C@H](O)[C@@](C)(COS(O)(=O)=O)[C@@H]2CC[C@@]3(C)[C@]4(C)CC[C@@]5(C(O)=O)CCC(C)(C)C[C@H]5C4=CC[C@@H]3[C@]21C XBZYWSMVVKYHQN-MYPRUECHSA-N 0.000 description 1
- IGGDKDTUCAWDAN-UHFFFAOYSA-N 1-vinylnaphthalene Chemical compound C1=CC=C2C(C=C)=CC=CC2=C1 IGGDKDTUCAWDAN-UHFFFAOYSA-N 0.000 description 1
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Natural products C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 1
- KKMOSYLWYLMHAL-UHFFFAOYSA-N 2-bromo-6-nitroaniline Chemical class NC1=C(Br)C=CC=C1[N+]([O-])=O KKMOSYLWYLMHAL-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000004135 Bone phosphate Substances 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000282994 Cervidae Species 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241000257303 Hymenoptera Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 108091081062 Repeated sequence (DNA) Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000012962 cracking technique Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001362 electron spin resonance spectrum Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000008571 general function Effects 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 125000003454 indenyl group Chemical group C1(C=CC2=CC=CC=C12)* 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 231100001231 less toxic Toxicity 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- XZGYRWKRPFKPFA-UHFFFAOYSA-N methylindium Chemical compound [In]C XZGYRWKRPFKPFA-UHFFFAOYSA-N 0.000 description 1
- PQIOSYKVBBWRRI-UHFFFAOYSA-N methylphosphonyl difluoride Chemical group CP(F)(F)=O PQIOSYKVBBWRRI-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000013206 minimal dilution Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000382 optic material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000003711 photoprotective effect Effects 0.000 description 1
- MIYBSVOETKUDOB-UHFFFAOYSA-N phthalic acid;styrene Chemical compound C=CC1=CC=CC=C1.OC(=O)C1=CC=CC=C1C(O)=O MIYBSVOETKUDOB-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000002990 reinforced plastic Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010454 slate Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000012855 volatile organic compound Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- KBEVZHAXWGOKCP-UHFFFAOYSA-N zinc oxygen(2-) tin(4+) Chemical compound [O--].[O--].[O--].[Zn++].[Sn+4] KBEVZHAXWGOKCP-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Fluid Mechanics (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/861,455 US7972898B2 (en) | 2007-09-26 | 2007-09-26 | Process for making doped zinc oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200924061A true TW200924061A (en) | 2009-06-01 |
Family
ID=40130580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097136925A TW200924061A (en) | 2007-09-26 | 2008-09-25 | Process for making doped zinc oxide |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7972898B2 (enExample) |
| EP (1) | EP2191499B1 (enExample) |
| JP (1) | JP2011501877A (enExample) |
| CN (1) | CN102017104B (enExample) |
| TW (1) | TW200924061A (enExample) |
| WO (1) | WO2009042144A2 (enExample) |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
| US20080166880A1 (en) * | 2007-01-08 | 2008-07-10 | Levy David H | Delivery device for deposition |
| US8624050B2 (en) * | 2007-06-22 | 2014-01-07 | General Electric Company | Solution process for transparent conductive oxide coatings |
| GB0718839D0 (en) * | 2007-09-26 | 2007-11-07 | Eastman Kodak Co | method of patterning a mesoporous nano particulate layer |
| US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
| US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
| GB0803702D0 (en) | 2008-02-28 | 2008-04-09 | Isis Innovation | Transparent conducting oxides |
| CN102473732B (zh) * | 2009-07-27 | 2015-09-16 | 株式会社神户制钢所 | 布线结构以及具备布线结构的显示装置 |
| GB0915376D0 (en) | 2009-09-03 | 2009-10-07 | Isis Innovation | Transparent conducting oxides |
| KR101730347B1 (ko) | 2009-09-16 | 2017-04-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011043215A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Shift register and display device and driving method thereof |
| US20110097492A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold operating state management system |
| US8252618B2 (en) * | 2009-12-15 | 2012-08-28 | Primestar Solar, Inc. | Methods of manufacturing cadmium telluride thin film photovoltaic devices |
| US8143515B2 (en) * | 2009-12-15 | 2012-03-27 | Primestar Solar, Inc. | Cadmium telluride thin film photovoltaic devices and methods of manufacturing the same |
| JP2011210778A (ja) * | 2010-03-29 | 2011-10-20 | Dainippon Printing Co Ltd | 薄膜トランジスタ基板 |
| TWI423437B (zh) * | 2010-04-07 | 2014-01-11 | Au Optronics Corp | 有機發光二極體顯示器之畫素結構及其製作方法 |
| CN102021535A (zh) * | 2010-12-21 | 2011-04-20 | 上海纳米技术及应用国家工程研究中心有限公司 | 铝掺杂氧化锌透明导电薄膜的低温制备方法 |
| CN102051594B (zh) * | 2011-01-28 | 2012-07-04 | 上海交通大学 | 原子层沉积制备Al掺杂ZnO透明导电薄膜的方法 |
| US8716073B2 (en) * | 2011-07-22 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing oxide semiconductor film and method for manufacturing semiconductor device |
| CN102503162A (zh) * | 2011-11-01 | 2012-06-20 | 昆明理工大学 | 一种Ag-Al共掺杂p型ZnO薄膜的制备方法 |
| US20130187150A1 (en) * | 2012-01-20 | 2013-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9735280B2 (en) * | 2012-03-02 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film |
| KR101980195B1 (ko) * | 2012-05-16 | 2019-05-21 | 삼성전자주식회사 | 황 도핑 징크옥시 나이트라이드 채널층을 가진 트랜지스터 및 그 제조방법 |
| US9153699B2 (en) | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
| KR101975929B1 (ko) * | 2012-06-29 | 2019-05-09 | 삼성전자주식회사 | 질산화물 채널층을 구비한 트랜지스터 및 그 제조방법 |
| JP6134598B2 (ja) | 2012-08-02 | 2017-05-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9245958B2 (en) | 2012-08-10 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2014024808A1 (en) | 2012-08-10 | 2014-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6220597B2 (ja) * | 2012-08-10 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9929276B2 (en) * | 2012-08-10 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6144470B2 (ja) | 2012-09-05 | 2017-06-07 | 浜松ホトニクス株式会社 | 電子管及び電子管の製造方法 |
| JP5956292B2 (ja) | 2012-09-05 | 2016-07-27 | 浜松ホトニクス株式会社 | 電子管 |
| KR101454190B1 (ko) * | 2012-12-07 | 2014-11-03 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조방법 |
| CN103866264B (zh) * | 2012-12-10 | 2017-05-10 | 中国科学院微电子研究所 | 一种磷掺杂氧化锌薄膜的制备方法 |
| CN103866275B (zh) * | 2012-12-11 | 2016-10-05 | 中国科学院微电子研究所 | 原子层沉积的共掺氧化锌薄膜的制备方法 |
| CN103866289B (zh) * | 2012-12-11 | 2017-03-29 | 中国科学院微电子研究所 | 一种p‑n共掺氧化锌薄膜的制备方法 |
| CN103866276B (zh) * | 2012-12-11 | 2016-08-03 | 中国科学院微电子研究所 | 原子层沉积制备共掺的氧化锌薄膜的方法 |
| CN103866277B (zh) * | 2012-12-11 | 2017-05-10 | 中国科学院微电子研究所 | 一种原子层沉积制备双受主共掺氧化锌薄膜的方法 |
| CN103866280B (zh) * | 2012-12-11 | 2016-10-05 | 中国科学院微电子研究所 | 一种原子层沉积制备施主-受主共掺氧化锌薄膜的方法 |
| CN103866268B (zh) * | 2012-12-11 | 2018-07-13 | 中国科学院微电子研究所 | 基于氮的施主-受主共掺氧化锌薄膜的制备方法 |
| CN103866279B (zh) * | 2012-12-11 | 2017-06-20 | 中国科学院微电子研究所 | 原子层沉积制备N‑As共掺的氧化锌薄膜的方法 |
| CN103866265B (zh) * | 2012-12-11 | 2016-12-21 | 中国科学院微电子研究所 | 基于氮的双受主共掺氧化锌薄膜的制备方法 |
| CN103866284A (zh) * | 2012-12-14 | 2014-06-18 | 中国科学院微电子研究所 | 一种氧化锌薄膜的制备方法 |
| US9175389B2 (en) * | 2012-12-21 | 2015-11-03 | Intermolecular, Inc. | ALD process window combinatorial screening tool |
| WO2014110173A1 (en) * | 2013-01-09 | 2014-07-17 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | High-performance amorphous semiconductors |
| US20140206137A1 (en) * | 2013-01-23 | 2014-07-24 | David H. Levy | Deposition system for thin film formation |
| JP5988041B2 (ja) * | 2013-02-14 | 2016-09-07 | 東京エレクトロン株式会社 | ＺｎＯ含有膜成長用の原料供給源、ＺｎＯ含有膜の製造装置、製造方法及びＺｎＯ含有膜を含む発光素子 |
| US20140338597A1 (en) * | 2013-05-16 | 2014-11-20 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Mask Plate for Glue Coating and Manufacturing Method Thereof |
| FI126043B (en) * | 2013-06-27 | 2016-06-15 | Beneq Oy | Method and device for coating a surface of a substrate |
| CN103628045B (zh) * | 2013-12-02 | 2015-09-23 | 华中科技大学 | 一种用于制作原子层沉积膜的可拆卸喷头及装置 |
| US9478419B2 (en) * | 2013-12-18 | 2016-10-25 | Asm Ip Holding B.V. | Sulfur-containing thin films |
| US9245742B2 (en) | 2013-12-18 | 2016-01-26 | Asm Ip Holding B.V. | Sulfur-containing thin films |
| FI126894B (en) * | 2014-12-22 | 2017-07-31 | Beneq Oy | Nozzle head, apparatus and method for coating a substrate surface |
| CN105858712B (zh) * | 2014-12-26 | 2019-09-06 | 神华（北京）光伏科技研发有限公司 | 光学带隙可调的氧化锌纳米柱阵列材料的制备方法及该方法得到的氧化锌纳米柱阵列材料 |
| CN105883900B (zh) * | 2014-12-29 | 2019-04-12 | 神华（北京）光伏科技研发有限公司 | 一种操控氧化锌纳米柱阵列的密度和光学带隙的方法 |
| JP2016148574A (ja) * | 2015-02-12 | 2016-08-18 | セイコーエプソン株式会社 | 電子部品搬送装置および電子部品検査装置 |
| US9711350B2 (en) | 2015-06-03 | 2017-07-18 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
| US10490475B2 (en) | 2015-06-03 | 2019-11-26 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation after oxide removal |
| US9711396B2 (en) | 2015-06-16 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming metal chalcogenide thin films on a semiconductor device |
| US9741815B2 (en) | 2015-06-16 | 2017-08-22 | Asm Ip Holding B.V. | Metal selenide and metal telluride thin films for semiconductor device applications |
| US10150282B2 (en) * | 2016-10-14 | 2018-12-11 | Xerox Corporation | System and method for additive manufacture of chemical delivery devices using halftone screening |
| US10400332B2 (en) * | 2017-03-14 | 2019-09-03 | Eastman Kodak Company | Deposition system with interlocking deposition heads |
| CN107390956B (zh) * | 2017-07-31 | 2021-01-29 | 上海天马微电子有限公司 | 一种触摸屏、显示面板、显示装置 |
| EP3705266B1 (de) * | 2019-03-08 | 2022-08-17 | Ivoclar Vivadent AG | Verfahren zum additiven aufbau eines dreidimensionalen produkts |
| KR102853172B1 (ko) * | 2019-03-11 | 2025-08-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 프로세싱 챔버들을 위한 덮개 조립체 장치 및 방법들 |
| KR20210046567A (ko) * | 2019-10-17 | 2021-04-28 | 에이에스엠 아이피 홀딩 비.브이. | 인듐 게르마늄 아연 산화물의 원자층 증착 |
| CN112687521A (zh) * | 2019-10-17 | 2021-04-20 | Asm Ip 控股有限公司 | 氧化铟镓锌的原子层沉积 |
| CN113621942A (zh) * | 2020-05-06 | 2021-11-09 | 中国科学院微电子研究所 | 一种铝掺杂氧化镓膜及其制备方法 |
| TW202314018A (zh) * | 2021-06-21 | 2023-04-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於形成包含氧化銦鎵鋅的層之反應器系統及方法 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI57975C (fi) * | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
| US4462332A (en) * | 1982-04-29 | 1984-07-31 | Energy Conversion Devices, Inc. | Magnetic gas gate |
| JP3079830B2 (ja) * | 1992-07-24 | 2000-08-21 | 富士電機株式会社 | 薄膜光電素子の製造方法および製造装置ならびにプラズマｃｖｄ法およびプラズマｃｖｄ装置 |
| DE4324320B4 (de) * | 1992-07-24 | 2006-08-31 | Fuji Electric Co., Ltd., Kawasaki | Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung |
| DE19907704A1 (de) * | 1999-02-23 | 2000-08-24 | Bayer Ag | Nanopartikuläres, redispergierbares Fällungszinkoxid |
| JP4866534B2 (ja) * | 2001-02-12 | 2012-02-01 | エーエスエム アメリカ インコーポレイテッド | 半導体膜の改良された堆積方法 |
| JP2003179242A (ja) * | 2001-12-12 | 2003-06-27 | National Institute Of Advanced Industrial & Technology | 金属酸化物半導体薄膜及びその製法 |
| US7264889B2 (en) * | 2002-04-24 | 2007-09-04 | Eastman Kodak Company | Stable electroluminescent device |
| US20050084610A1 (en) * | 2002-08-13 | 2005-04-21 | Selitser Simon I. | Atmospheric pressure molecular layer CVD |
| US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
| US20040065255A1 (en) * | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
| US7135369B2 (en) * | 2003-03-31 | 2006-11-14 | Micron Technology, Inc. | Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9 |
| JP4108633B2 (ja) * | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| US7121912B2 (en) * | 2004-01-26 | 2006-10-17 | Eastman Kodak Company | Method of improving stability in OLED devices |
| US7145174B2 (en) * | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| US7160819B2 (en) * | 2005-04-25 | 2007-01-09 | Sharp Laboratories Of America, Inc. | Method to perform selective atomic layer deposition of zinc oxide |
| US7402506B2 (en) * | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7691666B2 (en) * | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7413982B2 (en) * | 2006-03-29 | 2008-08-19 | Eastman Kodak Company | Process for atomic layer deposition |
| US20070269750A1 (en) * | 2006-05-19 | 2007-11-22 | Eastman Kodak Company | Colored masking for forming transparent structures |
| US8906490B2 (en) * | 2006-05-19 | 2014-12-09 | Eastman Kodak Company | Multicolor mask |
| US11136667B2 (en) * | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
| US20080166880A1 (en) * | 2007-01-08 | 2008-07-10 | Levy David H | Delivery device for deposition |
| US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
| US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| US8030212B2 (en) * | 2007-09-26 | 2011-10-04 | Eastman Kodak Company | Process for selective area deposition of inorganic materials |
| US8017183B2 (en) * | 2007-09-26 | 2011-09-13 | Eastman Kodak Company | Organosiloxane materials for selective area deposition of inorganic materials |
| US20090081356A1 (en) * | 2007-09-26 | 2009-03-26 | Fedorovskaya Elena A | Process for forming thin film encapsulation layers |
| US7572686B2 (en) * | 2007-09-26 | 2009-08-11 | Eastman Kodak Company | System for thin film deposition utilizing compensating forces |
| US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
| US7851380B2 (en) * | 2007-09-26 | 2010-12-14 | Eastman Kodak Company | Process for atomic layer deposition |
| US8221964B2 (en) * | 2007-11-20 | 2012-07-17 | Eastman Kodak Company | Integrated color mask |
| US7846644B2 (en) * | 2007-11-20 | 2010-12-07 | Eastman Kodak Company | Photopatternable deposition inhibitor containing siloxane |
| US8153352B2 (en) * | 2007-11-20 | 2012-04-10 | Eastman Kodak Company | Multicolored mask process for making display circuitry |
-
2007
- 2007-09-26 US US11/861,455 patent/US7972898B2/en active Active
-
2008
- 2008-09-24 WO PCT/US2008/011062 patent/WO2009042144A2/en not_active Ceased
- 2008-09-24 CN CN2008801091458A patent/CN102017104B/zh not_active Expired - Fee Related
- 2008-09-24 EP EP08834208.4A patent/EP2191499B1/en not_active Not-in-force
- 2008-09-24 JP JP2010526931A patent/JP2011501877A/ja active Pending
- 2008-09-25 TW TW097136925A patent/TW200924061A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN102017104A (zh) | 2011-04-13 |
| US20090081826A1 (en) | 2009-03-26 |
| US7972898B2 (en) | 2011-07-05 |
| CN102017104B (zh) | 2013-04-24 |
| WO2009042144A3 (en) | 2009-05-14 |
| EP2191499A2 (en) | 2010-06-02 |
| WO2009042144A2 (en) | 2009-04-02 |
| JP2011501877A (ja) | 2011-01-13 |
| EP2191499B1 (en) | 2019-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200924061A (en) | Process for making doped zinc oxide | |
| TW200926308A (en) | Process for atomic layer deposition | |
| JP5249243B2 (ja) | 原子層堆積法 | |
| JP5149272B2 (ja) | 原子層堆積法 | |
| Park et al. | Transparent ZnO-TFT arrays fabricated by atomic layer deposition | |
| TWI459467B (zh) | 用於無機材料之選擇區域沈積之有機矽氧材料 | |
| Lin et al. | Stable and high-performance flexible ZnO thin-film transistors by atomic layer deposition | |
| Seok et al. | Field-effect device using quasi-two-dimensional electron gas in mass-producible atomic-layer-deposited Al2O3/TiO2 ultrathin (< 10 nm) film heterostructures | |
| Hoye et al. | Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices | |
| TWI396769B (zh) | 用於原子層沉積之裝置 | |
| Hoye et al. | Synthesis and modeling of uniform complex metal oxides by close-proximity atmospheric pressure chemical vapor deposition | |
| US20080296567A1 (en) | Method of making thin film transistors comprising zinc-oxide-based semiconductor materials | |
| US10283705B2 (en) | Memory cells, semiconductor devices including the memory cells, and methods of operation | |
| JP2015078442A (ja) | 堆積システム及び方法 | |
| US20080283830A1 (en) | Zinc-tin oxide thin-film transistors | |
| Sil et al. | Fluoride doping in crystalline and amorphous indium oxide semiconductors | |
| US8119514B2 (en) | Cobalt-doped indium-tin oxide films and methods | |
| Gueye et al. | Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy | |
| Fickenscher et al. | Atomic Layer Deposition of HfS2 on Oxide Interfaces: A Model Study on the Initial Nucleation Processes | |
| KR102036972B1 (ko) | 산화물 박막 트랜지스터 및 그 제조방법 | |
| US8895977B2 (en) | Thin film transistor and method of forming the same |