NO20045674D0 - Thin films prepared with gas phase deposition technique - Google Patents
Thin films prepared with gas phase deposition techniqueInfo
- Publication number
- NO20045674D0 NO20045674D0 NO20045674A NO20045674A NO20045674D0 NO 20045674 D0 NO20045674 D0 NO 20045674D0 NO 20045674 A NO20045674 A NO 20045674A NO 20045674 A NO20045674 A NO 20045674A NO 20045674 D0 NO20045674 D0 NO 20045674D0
- Authority
- NO
- Norway
- Prior art keywords
- gas phase
- thin films
- deposition technique
- phase deposition
- films prepared
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
- B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/50—Multilayers
- B05D7/52—Two layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/50—Multilayers
- B05D7/56—Three layers or more
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20045674A NO20045674D0 (no) | 2004-12-28 | 2004-12-28 | Thin films prepared with gas phase deposition technique |
DK05822680.4T DK1838893T3 (en) | 2004-12-28 | 2005-12-28 | Thin films made with gas phase deposition technique |
PL05822680T PL1838893T3 (pl) | 2004-12-28 | 2005-12-28 | Cienkie warstwy wytwarzane techniką osadzania z fazy gazowej |
KR1020077014802A KR101322095B1 (ko) | 2004-12-28 | 2005-12-28 | 기체상 증착 기술에 의한 박막 |
PCT/NO2005/000488 WO2006071126A1 (en) | 2004-12-28 | 2005-12-28 | Thin films prepared with gas phase deposition technique |
ES05822680T ES2730832T3 (es) | 2004-12-28 | 2005-12-28 | Películas finas preparadas con una técnica de deposición en fase gaseosa |
EP05822680.4A EP1838893B1 (en) | 2004-12-28 | 2005-12-28 | Thin films prepared with gas phase deposition technique |
US11/722,937 US8124179B2 (en) | 2004-12-28 | 2005-12-28 | Thin films prepared with gas phase deposition technique |
NO20073885A NO343742B1 (no) | 2004-12-28 | 2007-07-24 | Fremgangsmåte for fremstilling av tynnfilm ved gassfasedeponeringsteknikk |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20045674A NO20045674D0 (no) | 2004-12-28 | 2004-12-28 | Thin films prepared with gas phase deposition technique |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20045674D0 true NO20045674D0 (no) | 2004-12-28 |
Family
ID=35209724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20045674A NO20045674D0 (no) | 2004-12-28 | 2004-12-28 | Thin films prepared with gas phase deposition technique |
Country Status (8)
Country | Link |
---|---|
US (1) | US8124179B2 (no) |
EP (1) | EP1838893B1 (no) |
KR (1) | KR101322095B1 (no) |
DK (1) | DK1838893T3 (no) |
ES (1) | ES2730832T3 (no) |
NO (1) | NO20045674D0 (no) |
PL (1) | PL1838893T3 (no) |
WO (1) | WO2006071126A1 (no) |
Families Citing this family (34)
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KR101535395B1 (ko) | 2004-01-22 | 2015-07-08 | 유니버시티 오브 마이애미 | 국소용 코-엔자임 큐10 제형 및 그의 사용 방법 |
KR20090032089A (ko) * | 2006-06-19 | 2009-03-31 | 유니버시테테트 아이 오슬로 | 기상 반응을 통한 표면의 활성화 |
KR101449076B1 (ko) | 2006-11-13 | 2015-02-23 | 더 리젠츠 오브 더 유니버시티 오브 콜로라도, 어 바디 코포레이트 | 유기 또는 유기-무기 폴리머 제조를 위한 분자층 증착 공정 |
WO2008111850A2 (en) * | 2007-03-15 | 2008-09-18 | Universitetet I Oslo | Synthesis of molecular metalorganic compounds |
CA2680825C (en) | 2007-03-22 | 2013-10-29 | Cytotech Labs, Llc | Topical formulations having enhanced bioavailability |
JP5220106B2 (ja) | 2007-06-22 | 2013-06-26 | ザ・リージエンツ・オブ・ザ・ユニバーシティ・オブ・コロラド | 原子層堆積法及び分子層堆積法を用いて製造された有機電子デバイス用の保護被膜 |
WO2009001220A2 (en) * | 2007-06-26 | 2008-12-31 | Universitetet I Oslo | Functionalization of microscopy probe tips |
US7858144B2 (en) * | 2007-09-26 | 2010-12-28 | Eastman Kodak Company | Process for depositing organic materials |
USRE46610E1 (en) | 2007-12-28 | 2017-11-14 | Universitetet I Oslo | Formation of a lithium comprising structure on a substrate by ALD |
EP2271325A4 (en) | 2008-04-11 | 2011-11-09 | Cytotech Labs Llc | METHODS AND USE OF INDUCING APOPTOSIS IN CANCER CELLS |
DE102008054052A1 (de) * | 2008-10-30 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Organisches, strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines solchen |
KR20120034649A (ko) | 2009-05-11 | 2012-04-12 | 버그 바이오시스템즈, 엘엘씨 | 환경대사적 전환인자(조효소 q10)를 사용한 질환의 치료 방법 |
NZ602057A (en) | 2010-03-12 | 2015-06-26 | Berg Pharma Llc | Intravenous formulations of coenzyme q10 (coq10) and methods of use thereof |
KR101489161B1 (ko) * | 2010-07-30 | 2015-02-06 | 주식회사 잉크테크 | 투명 도전막의 제조방법 및 이에 의해 제조된 투명 도전막 |
CN107675250B (zh) * | 2011-03-28 | 2020-08-07 | 应用材料公司 | 选择性沉积外延锗合金应力源的方法与设备 |
ES2762451T3 (es) | 2011-04-04 | 2020-05-25 | Berg Llc | Tratamiento de tumores del sistema nervioso central con coenzima Q10 |
SG10201605008TA (en) | 2011-06-17 | 2016-07-28 | Berg Llc | Inhalable pharmaceutical compositions |
WO2013148211A1 (en) | 2012-03-30 | 2013-10-03 | The Trustees Of Columbia University In The City Of New York | Solid-state materials formed of molecular clusters and method of forming same |
EP2770373A1 (en) * | 2013-02-20 | 2014-08-27 | Imec | Conformal anti-reflective coating |
KR102123996B1 (ko) | 2013-02-25 | 2020-06-17 | 삼성전자주식회사 | 알루미늄 전구체, 이를 이용한 박막 형성 방법 및 커패시터 형성 방법 |
EA032775B1 (ru) | 2013-04-08 | 2019-07-31 | Берг Ллк | Способы лечения злокачественной опухоли с использованием комбинированной терапии с коферментом q10 |
BR112016004476A2 (pt) * | 2013-08-30 | 2017-09-12 | Basf Coatings Gmbh | estrutura de substrato, emissor de luz, dispositivo de exibição, célula de bateria solar e método para a preparação da estrutura de substrato) |
JP6595478B2 (ja) | 2013-09-04 | 2019-10-23 | バーグ エルエルシー | コエンザイムq10の連続注入によるがんの治療方法 |
WO2016011412A1 (en) | 2014-07-17 | 2016-01-21 | Ada Technologies, Inc. | Extreme long life, high energy density batteries and method of making and using the same |
JP6657588B2 (ja) * | 2015-04-17 | 2020-03-04 | 凸版印刷株式会社 | 積層体及びその製造方法 |
WO2016209460A2 (en) | 2015-05-21 | 2016-12-29 | Ada Technologies, Inc. | High energy density hybrid pseudocapacitors and method of making and using the same |
US10692659B2 (en) | 2015-07-31 | 2020-06-23 | Ada Technologies, Inc. | High energy and power electrochemical device and method of making and using same |
US11024846B2 (en) | 2017-03-23 | 2021-06-01 | Ada Technologies, Inc. | High energy/power density, long cycle life, safe lithium-ion battery capable of long-term deep discharge/storage near zero volt and method of making and using the same |
TWI722301B (zh) * | 2017-07-18 | 2021-03-21 | 美商應用材料股份有限公司 | 在金屬材料表面上沉積阻擋層的方法 |
CA3073711A1 (en) | 2017-08-24 | 2019-02-28 | Forge Nano, Inc. | Manufacturing processes to synthesize, functionalize, surface treat and/or encapsulate powders, and applications thereof |
CN111727272B (zh) * | 2017-12-20 | 2023-04-28 | 巴斯夫欧洲公司 | 产生含金属膜的方法 |
KR102649437B1 (ko) * | 2018-05-30 | 2024-03-19 | 한양대학교 산학협력단 | 안티-그로스 박막 및 그 제조 방법 |
WO2020141731A1 (ko) * | 2018-12-31 | 2020-07-09 | 한양대학교 산학협력단 | 메탈리스 박막의 제조 방법, 그리고 미세패턴 제조 방법, 그리고 전자 소자의 제조 방법 |
KR102265169B1 (ko) * | 2019-07-11 | 2021-06-15 | 한양대학교 산학협력단 | 하이브리드 박막 및 그 제조 방법 |
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US5693139A (en) * | 1984-07-26 | 1997-12-02 | Research Development Corporation Of Japan | Growth of doped semiconductor monolayers |
KR100297719B1 (ko) * | 1998-10-16 | 2001-08-07 | 윤종용 | 박막제조방법 |
JP2001021850A (ja) | 1999-07-06 | 2001-01-26 | Sony Corp | 固体変位素子、光学素子及び干渉フィルター |
KR100421219B1 (ko) | 2001-06-14 | 2004-03-02 | 삼성전자주식회사 | β-디케톤 리간드를 갖는 유기 금속 착물을 이용한 원자층증착방법 |
US6645882B1 (en) | 2002-01-17 | 2003-11-11 | Advanced Micro Devices, Inc. | Preparation of composite high-K/standard-K dielectrics for semiconductor devices |
US6830971B2 (en) | 2002-11-02 | 2004-12-14 | Chartered Semiconductor Manufacturing Ltd | High K artificial lattices for capacitor applications to use in CU or AL BEOL |
US7045073B2 (en) | 2002-12-18 | 2006-05-16 | Intel Corporation | Pre-etch implantation damage for the removal of thin film layers |
EP1617467A4 (en) * | 2003-03-26 | 2009-12-16 | Riken | METHOD FOR MANUFACTURING DIELECTRIC INSULATING THIN FILM AND DIELECTRIC INSULATING MATERIAL |
-
2004
- 2004-12-28 NO NO20045674A patent/NO20045674D0/no unknown
-
2005
- 2005-12-28 DK DK05822680.4T patent/DK1838893T3/en active
- 2005-12-28 ES ES05822680T patent/ES2730832T3/es active Active
- 2005-12-28 PL PL05822680T patent/PL1838893T3/pl unknown
- 2005-12-28 WO PCT/NO2005/000488 patent/WO2006071126A1/en active Application Filing
- 2005-12-28 US US11/722,937 patent/US8124179B2/en active Active
- 2005-12-28 EP EP05822680.4A patent/EP1838893B1/en active Active
- 2005-12-28 KR KR1020077014802A patent/KR101322095B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
PL1838893T3 (pl) | 2019-07-31 |
ES2730832T3 (es) | 2019-11-12 |
EP1838893B1 (en) | 2019-01-23 |
US20080102313A1 (en) | 2008-05-01 |
EP1838893A1 (en) | 2007-10-03 |
US8124179B2 (en) | 2012-02-28 |
WO2006071126A1 (en) | 2006-07-06 |
DK1838893T3 (en) | 2019-04-29 |
KR101322095B1 (ko) | 2013-10-25 |
KR20070095919A (ko) | 2007-10-01 |
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