FI20105901L - Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi - Google Patents

Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi Download PDF

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Publication number
FI20105901L
FI20105901L FI20105901A FI20105901A FI20105901L FI 20105901 L FI20105901 L FI 20105901L FI 20105901 A FI20105901 A FI 20105901A FI 20105901 A FI20105901 A FI 20105901A FI 20105901 L FI20105901 L FI 20105901L
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FI
Finland
Prior art keywords
substrate
starting material
source
starting
ald
Prior art date
Application number
FI20105901A
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English (en)
Swedish (sv)
Other versions
FI20105901A0 (fi
FI124113B (fi
Inventor
Pekka Soininen
Sami Sneck
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20105901A priority Critical patent/FI124113B/fi
Publication of FI20105901A0 publication Critical patent/FI20105901A0/fi
Priority to DE112011102860T priority patent/DE112011102860T5/de
Priority to TW100131024A priority patent/TWI542726B/zh
Priority to PCT/FI2011/050752 priority patent/WO2012028784A1/en
Priority to US13/816,870 priority patent/US9783887B2/en
Priority to CN201180041761.6A priority patent/CN103080373B/zh
Publication of FI20105901L publication Critical patent/FI20105901L/fi
Application granted granted Critical
Publication of FI124113B publication Critical patent/FI124113B/fi
Priority to US15/696,890 priority patent/US20170362708A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Keksintö liittyy laitteistoon ja menetelmään substraatin (2) pinnan (4) muokkaamiseksi altistamalla substraatin (2) pinta (4) ainakin ensimmäisen lähtöaineen (A) ja toisen lähtöaineen (B) vuoroittaisille pintareaktioille atomikerroskasvatusmenetelmän periaatteiden mukaisesti. Keksinnön mukaisesti substraatin (2) pinnalle (4) syötetään paikallisesti ensimmäistä lähtöainetta (A) lähteen (6, 7, 8) avulla liikuttamalla lähdettä (6, 7, 8) suhteessa substraattiin (2) ja ensimmäisellä lähtöaineella (A) käsitelty substraatin (2) pinta (4) altistetaan lähdettä (6, 7, 8) ympäröivässä atmosfäärissä (1) olevalle toiselle lähtöaineelle (B).
FI20105901A 2010-08-30 2010-08-30 Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi FI124113B (fi)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI20105901A FI124113B (fi) 2010-08-30 2010-08-30 Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
DE112011102860T DE112011102860T5 (de) 2010-08-30 2011-08-30 Anordnung und Verfahren
TW100131024A TWI542726B (zh) 2010-08-30 2011-08-30 裝置及方法
PCT/FI2011/050752 WO2012028784A1 (en) 2010-08-30 2011-08-30 Apparatus and method
US13/816,870 US9783887B2 (en) 2010-08-30 2011-08-30 Apparatus and method
CN201180041761.6A CN103080373B (zh) 2010-08-30 2011-08-30 用于处理基体的表面的装置和方法
US15/696,890 US20170362708A1 (en) 2010-08-30 2017-09-06 Apparatus and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20105901A FI124113B (fi) 2010-08-30 2010-08-30 Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
FI20105901 2010-08-30

Publications (3)

Publication Number Publication Date
FI20105901A0 FI20105901A0 (fi) 2010-08-30
FI20105901L true FI20105901L (fi) 2012-03-01
FI124113B FI124113B (fi) 2014-03-31

Family

ID=42669405

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20105901A FI124113B (fi) 2010-08-30 2010-08-30 Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi

Country Status (6)

Country Link
US (2) US9783887B2 (fi)
CN (1) CN103080373B (fi)
DE (1) DE112011102860T5 (fi)
FI (1) FI124113B (fi)
TW (1) TWI542726B (fi)
WO (1) WO2012028784A1 (fi)

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US20170362708A1 (en) 2017-12-21
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CN103080373B (zh) 2016-01-20
US20130164458A1 (en) 2013-06-27
CN103080373A (zh) 2013-05-01
TW201211307A (en) 2012-03-16
US9783887B2 (en) 2017-10-10
WO2012028784A1 (en) 2012-03-08
TWI542726B (zh) 2016-07-21

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