JP4593287B2 - 半導体製造装置 - Google Patents
半導体製造装置 Download PDFInfo
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- JP4593287B2 JP4593287B2 JP2004564064A JP2004564064A JP4593287B2 JP 4593287 B2 JP4593287 B2 JP 4593287B2 JP 2004564064 A JP2004564064 A JP 2004564064A JP 2004564064 A JP2004564064 A JP 2004564064A JP 4593287 B2 JP4593287 B2 JP 4593287B2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
まず本発明の特徴として、プラズマ発生手段を用いて、大気圧又は大気圧近傍下(5〜800Torr、6.6×102〜1.1×105Pa)で成膜処理またはエッチング処理を施すことが挙げられる。そこで、図1A〜図2Eを用いて、本発明において用いられるプラズマ処理装置の一例として、第1の電極が第2の電極を取り囲み、その先端にノズル状の細口を有する円筒状の電極を有する装置について説明する。
本実施の形態について、実施の形態1との違いを図3A及び図3Bを用いて説明する。図3Aは、本実施の形態で用いられるプラズマ処理装置の側面図であり、図3Bは上面図である。
本実施の形態は、実施の形態1のプラズマ処理装置を点状液滴噴射装置に適用したものである。プラズマ発生手段を点状液滴噴射手段に置き換えて使用する。
本実施の形態は上述した点状液滴噴射装置とは異なる噴射装置として、線状液滴噴射装置について説明する。
本実施の形態は、リワーク機能付きレジストパターン形成装置の例である。本実施の形態について図8を用いて説明する。
本実施の形態では、平坦化装置について説明する。本実施の形態について図9A及び図9Bを用いて説明する。図9Aは、本実施の形態で説明するプラズマ処理装置の側面図であり、図9Bは処理室905における処理状況を説明する図である。本実施の形態の被処理物は、被処理物上に例えば配線パターンが形成されており、さらにその上に絶縁膜が形成され、絶縁膜表面が配線パターンの形状を反映し凹凸となっている状態を想定している。
Claims (2)
- 被処理物を搬送する第1の搬送手段を有するロード室と、
第1の液滴噴射手段と、前記被処理物を搬送する第2の搬送手段とを有し、前記第1の搬送手段によって搬送された前記被処理物上に、前記第1の液滴噴射手段によりレジストパターンを形成する第1の処理室と、
撮像手段と、前記被処理物を搬送する第3の搬送手段とを有し、前記第2の搬送手段によって搬送された前記被処理物上の前記レジストパターンを撮像する第2の処理室と、
前記第2の処理室で撮像した前記レジストパターンが不良パターンか否かを判断し、前記不良パターンの位置情報を記憶する制御手段と、
プラズマ発生手段と、前記被処理物を搬送する第4の搬送手段とを有し、前記位置情報に従って、前記第3の搬送手段によって搬送された前記被処理物上の、前記レジストパターンのうち前記不良パターンを、前記プラズマ発生手段により酸素ガス又は酸素ガスにフッ素系のガスを混合したガスを用いてエッチング除去する第3の処理室と、
第2の液滴噴射手段と、前記被処理物を搬送する第5の搬送手段とを有し、前記第4の搬送手段によって搬送された前記被処理物上の、前記第3の処理室で除去した部分に前記第2の液滴噴射手段によりレジストパターンを再度形成する第4の処理室と、
カセットを有し、前記第5の搬送手段によって搬送された前記被処理物を前記カセットに収納するアンロード室とを有することを特徴とする半導体製造装置。 - 請求項1において、
前記被処理物はガラス基板又は半導体ウエハであることを特徴とする半導体製造装置。
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PCT/JP2004/000932 WO2004070811A1 (ja) | 2003-02-06 | 2004-01-30 | 半導体製造装置 |
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KR101113773B1 (ko) | 2012-03-13 |
WO2004070811A1 (ja) | 2004-08-19 |
KR20050095877A (ko) | 2005-10-04 |
CN1748294A (zh) | 2006-03-15 |
US20110073256A1 (en) | 2011-03-31 |
JPWO2004070811A1 (ja) | 2006-05-25 |
US20050167404A1 (en) | 2005-08-04 |
KR101229385B1 (ko) | 2013-02-05 |
CN101552230A (zh) | 2009-10-07 |
US7922819B2 (en) | 2011-04-12 |
CN101552230B (zh) | 2011-05-25 |
CN100472731C (zh) | 2009-03-25 |
KR20110018470A (ko) | 2011-02-23 |
KR20110031384A (ko) | 2011-03-25 |
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