JP4526951B2 - 表示装置の作製方法 - Google Patents
表示装置の作製方法 Download PDFInfo
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- JP4526951B2 JP4526951B2 JP2004564050A JP2004564050A JP4526951B2 JP 4526951 B2 JP4526951 B2 JP 4526951B2 JP 2004564050 A JP2004564050 A JP 2004564050A JP 2004564050 A JP2004564050 A JP 2004564050A JP 4526951 B2 JP4526951 B2 JP 4526951B2
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- droplet ejecting
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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Description
本実施の形態では、複数の液滴噴射孔を線状に配置した液滴噴射ヘッドを有する液滴噴射装置と、大気圧又は大気圧近傍下におけるプラズマ発生手段を有するプラズマ処理装置を用いることで、所望のサイズのガラス基板に、表示装置として不可欠な配線パターンを作製する。特に本発明は大型化する第5世代以降の基板への適用を意図したものである。以下、本発明の実施の形態1について、図面を参照して説明する。
次に、実施の形態1で用いる大気圧又は大気圧近傍下におけるプラズマ発生手段を有するプラズマ処理装置を、添付図面を参照して説明する。図6A,6Bは、本発明において用いられる前記プラズマ処理装置の一例斜視図である。前記プラズマ処理装置では、表示装置を構成する、所望のサイズのガラス基板、プラスチック基板に代表される樹脂基板等の被処理物603を取り扱う。被処理物603の搬送方式としては、水平搬送が挙げられるが、第5世代以降の基板を用いる場合には、搬送機の占有面積の低減を目的として、基板を縦置きにした縦形搬送を行ってもよい。
図6Aは、本発明において用いられるプラズマ処理装置の一例の上面図であり、図6Bは断面図である。同図において、カセット室606には、所望のサイズのガラス基板、プラスチック基板に代表される樹脂基板等の被処理物603がセットされる。被処理物603の搬送方式としては、水平搬送が挙げられるが、第5世代以降の基板を用いる場合には、搬送機の占有面積の低減を目的として、基板を縦置きにした縦形搬送を行ってもよい。
大気圧又は大気圧近傍下で動作するプラズマ処理装置を用いる本発明は、減圧装置に必要である真空引きや大気開放の時間が必要なく、複雑な真空系を配置する必要がない。特に大型基板を用いる場合には、必然的にチャンバも大型化し、チャンバ内を減圧状態にすると処理時間もかかってしまうため、大気圧又は大気圧近傍下で動作させる本装置は有効であり、製造コストの低減が可能となる。
本実施の形態では、複数の液滴噴射孔を配置した液滴噴射ヘッドを有する線状液滴噴射装置のみを使用することで配線を形成することを特徴とする。
本実施の形態では、前記プラズマ処理装置のみを使用し、配線を形成することを特徴とする。以下、本実施の形態について説明する。
Claims (4)
- 複数の液滴噴射孔を配置した液滴噴射ヘッドを有する第1の液滴噴射装置を用いて、被処理膜上に、局所的に導電性膜を形成した後、複数の液滴噴射孔を配置した液滴噴射ヘッドを有する第2の液滴噴射装置を用いて前記導電性膜の上に局所的にレジストパターンを形成し、プラズマ発生手段を有するプラズマ処理装置を用いて、600〜106000Paの圧力下で、前記レジストパターンをマスクとして前記導電性膜を局所的にエッチングし、配線を形成することを特徴とする表示装置の作製方法。
- 複数の液滴噴射孔を配置した液滴噴射ヘッドを有する第1の液滴噴射装置を用いて、被処理膜上に導電性粒子を含有する液滴を噴射し、局所的に導電性膜を形成した後、複数の液滴噴射孔を配置した液滴噴射ヘッドを有する第2の液滴噴射装置を用いて前記導電性膜の上に局所的にレジストパターンを形成し、一組の円筒状の電極を有するプラズマ発生手段、若しくは円筒状の電極を複数組直線状に配列させたプラズマ発生手段を有するプラズマ処理装置を用いて、600〜106000Paの圧力下で、前記レジストパターンをマスクとして前記導電性膜を局所的にエッチングし、配線を形成することを特徴とする表示装置の作製方法。
- 複数の液滴噴射孔を配置した液滴噴射ヘッドを有する第1の液滴噴射装置を用いて、被処理膜上に導電性粒子を含有する液滴を噴射し、局所的に導電性膜を形成した後、複数の液滴噴射孔を配置した液滴噴射ヘッドを有する第2の液滴噴射装置を用いて前記導電性膜の上に局所的にレジストパターンを形成し、一組の円筒状の電極を有するプラズマ発生手段、若しくは円筒状の電極を複数組直線状に配列させたプラズマ発生手段を有するプラズマ処理装置を用いて、600〜106000Paの圧力下で、前記レジストパターンをマスクとして前記導電性膜を局所的にエッチングした後、前記プラズマ発生手段を有するプラズマ処理装置を用いて、600〜106000Paの圧力下で、前記レジストパターンを除去することにより、配線を形成することを特徴とする表示装置の作製方法。
- 複数の液滴噴射孔を配置した液滴噴射ヘッドを有する第1の液滴噴射装置を用いて、基板上に導電性粒子を含有する液滴を噴射し、局所的に導電性膜を形成した後、複数の液滴噴射孔を配置した液滴噴射ヘッドを有する第2の液滴噴射装置を用いて前記導電性膜の上に局所的にレジストパターンを形成し、一組の円筒状の電極を有するプラズマ発生手段、若しくは円筒状の電極を複数組直線状に配列させたプラズマ発生手段を有するプラズマ処理装置を用いて、600〜106000Paの圧力下で、前記レジストパターンをマスクとして前記導電性膜を局所的にエッチングすることにより、ゲート電極を形成し、
前記ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に半導体層を成膜し、
前記半導体層上にチャネル保護膜を形成し、
前記半導体層上及びチャネル保護膜上に不純物が添加された非晶質半導体膜を形成し、
複数の液滴噴射孔を配置した液滴噴射ヘッドを有する第3の液滴噴射装置を用いて、前記非晶質半導体膜上に導電性粒子を含有する液滴を噴射し、ソース電極及びドレイン電極を形成し、
前記プラズマ発生手段を有するプラズマ処理装置を用いて、600〜106000Paの圧力下で、前記ソース電極及び前記ドレイン電極をマスクとして、前記非晶質半導体膜を局所的にエッチングした後、前記ソース電極及び前記ドレイン電極上に保護膜を形成することを特徴とする表示装置の作製方法。
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CN100392828C (zh) | 2008-06-04 |
US7625493B2 (en) | 2009-12-01 |
KR101032338B1 (ko) | 2011-05-06 |
WO2004070821A1 (ja) | 2004-08-19 |
US20050064091A1 (en) | 2005-03-24 |
JPWO2004070821A1 (ja) | 2006-06-01 |
CN1745467A (zh) | 2006-03-08 |
KR20050097530A (ko) | 2005-10-07 |
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