JP2011506758A - 有機材料を堆積する方法 - Google Patents

有機材料を堆積する方法 Download PDF

Info

Publication number
JP2011506758A
JP2011506758A JP2010526899A JP2010526899A JP2011506758A JP 2011506758 A JP2011506758 A JP 2011506758A JP 2010526899 A JP2010526899 A JP 2010526899A JP 2010526899 A JP2010526899 A JP 2010526899A JP 2011506758 A JP2011506758 A JP 2011506758A
Authority
JP
Japan
Prior art keywords
substrate
gas
gas material
deposition
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010526899A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011506758A5 (enExample
Inventor
キャロル フリーマン，ダイアン
ハワード レビー，デイビッド
ジェローム カウデリー−コーバン，ピーター
Original Assignee
イーストマン コダック カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イーストマン コダック カンパニー filed Critical イーストマン コダック カンパニー
Publication of JP2011506758A publication Critical patent/JP2011506758A/ja
Publication of JP2011506758A5 publication Critical patent/JP2011506758A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2252/00—Sheets
    • B05D2252/02—Sheets of indefinite length

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
JP2010526899A 2007-09-26 2008-09-17 有機材料を堆積する方法 Pending JP2011506758A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/861,618 US7858144B2 (en) 2007-09-26 2007-09-26 Process for depositing organic materials
PCT/US2008/010801 WO2009042051A2 (en) 2007-09-26 2008-09-17 Process for depositing organic materials

Publications (2)

Publication Number Publication Date
JP2011506758A true JP2011506758A (ja) 2011-03-03
JP2011506758A5 JP2011506758A5 (enExample) 2011-11-10

Family

ID=40377691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526899A Pending JP2011506758A (ja) 2007-09-26 2008-09-17 有機材料を堆積する方法

Country Status (5)

Country Link
US (1) US7858144B2 (enExample)
EP (1) EP2210270B1 (enExample)
JP (1) JP2011506758A (enExample)
CN (1) CN102027603B (enExample)
WO (1) WO2009042051A2 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8278665B2 (en) 2009-09-28 2012-10-02 Hitachi Displays, Ltd. Organic light emitting diode display
JP2016201382A (ja) * 2015-04-07 2016-12-01 信越化学工業株式会社 太陽電池用パッシベーション膜形成方法及び太陽電池用パッシベーション膜形成装置
JP2016537510A (ja) * 2013-08-30 2016-12-01 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ 基板構造およびその調製方法
KR20170020766A (ko) * 2014-06-13 2017-02-24 바스프 코팅스 게엠베하 유기물-무기물 라미네이트의 제조 방법
KR20170020765A (ko) * 2014-06-12 2017-02-24 바스프 코팅스 게엠베하 가요성 유기물-무기물 라미네이트의 제조 방법
WO2021059332A1 (ja) * 2019-09-24 2021-04-01 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US20080166880A1 (en) * 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US8211231B2 (en) * 2007-09-26 2012-07-03 Eastman Kodak Company Delivery device for deposition
US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
WO2010051341A1 (en) * 2008-10-31 2010-05-06 Sundew Technologies, Llc Coatings for suppressing metallic whiskers
CN102308368B (zh) 2008-12-04 2014-02-12 威科仪器有限公司 用于化学气相沉积的进气口元件及其制造方法
WO2010135107A1 (en) * 2009-05-11 2010-11-25 Regents Of The University Of Colorado, A Body Corporate Ultra-thin metal oxide and carbon-metal oxide films prepared by atomic layer deposition (ald)
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
FI20105908A0 (fi) * 2010-08-30 2010-08-30 Beneq Oy Laite
JP5966618B2 (ja) * 2012-05-28 2016-08-10 東京エレクトロン株式会社 成膜方法
KR101435100B1 (ko) * 2012-06-20 2014-08-29 주식회사 엠티에스나노테크 원자층 증착 장치
DE102012214411B4 (de) * 2012-08-14 2022-05-25 Osram Oled Gmbh Vorrichtung und verfahren zum herstellen hermetisch dichter kavitäten
US20140206137A1 (en) * 2013-01-23 2014-07-24 David H. Levy Deposition system for thin film formation
TW201435132A (zh) * 2013-02-22 2014-09-16 Applied Materials Inc 包含ＳｉＯＣ的膜的催化性原子層沉積
KR102075528B1 (ko) * 2013-05-16 2020-03-03 삼성디스플레이 주식회사 증착장치, 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치
EP3003286B1 (en) * 2013-05-24 2022-04-27 Nanexa AB Method of preparing solid nanoparticles with inorganic coating and use thereof
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
CN103510074A (zh) * 2013-10-25 2014-01-15 南京大学 基于ald技术的复合无机-有机杂化物薄膜的制备方法
CN106211763B (zh) * 2014-03-25 2019-08-27 住友金属矿山株式会社 包覆焊料材料及其制造方法
GB201412201D0 (en) * 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
JP6932321B2 (ja) * 2015-06-01 2021-09-08 フォージ ナノ インコーポレイティド アノード活物質、カソード活物質及び固体電解質のためのナノ加工コーティング並びにナノ加工コーティングを含む電池の製造方法
KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
US10865477B2 (en) * 2016-02-08 2020-12-15 Illinois Tool Works Inc. Method and system for the localized deposit of metal on a surface
CN106086812B (zh) * 2016-07-20 2018-08-03 南京航空航天大学 一种金属表面防腐蚀耐磨损的复合涂层及其制备方法
US10400332B2 (en) * 2017-03-14 2019-09-03 Eastman Kodak Company Deposition system with interlocking deposition heads
US12006570B2 (en) * 2017-08-31 2024-06-11 Uchicago Argonne, Llc Atomic layer deposition for continuous, high-speed thin films
CN108448006B (zh) * 2018-03-29 2021-01-22 京东方科技集团股份有限公司 封装结构、电子装置以及封装方法
US10673046B2 (en) * 2018-04-13 2020-06-02 GM Global Technology Operations LLC Separator for lithium metal based batteries
GB2585077A (en) 2019-06-28 2020-12-30 Nanexa Ab Apparatus
US20220359332A1 (en) * 2021-05-09 2022-11-10 Spts Technologies Limited Temporary passivation layer on a substrate
CN115821229A (zh) * 2022-11-25 2023-03-21 江苏微导纳米科技股份有限公司 一种用于沉积薄膜的方法和设备以及薄膜

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130896A (en) * 1979-02-28 1980-10-11 Lohja Ab Oy Method and device for growing compound thin membrane
JP2005089781A (ja) * 2003-09-12 2005-04-07 Mitsui Eng & Shipbuild Co Ltd 薄膜形成装置
WO2006071126A1 (en) * 2004-12-28 2006-07-06 Universitetet I Oslo Thin films prepared with gas phase deposition technique
US20070077356A1 (en) * 2005-09-20 2007-04-05 Semiconductor Manufacturing International (Shanghai) Corporation Method for atomic layer deposition of materials using an atmospheric pressure for semiconductor devices

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
US6316098B1 (en) * 1998-03-27 2001-11-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Molecular layer epitaxy method and compositions
US6783849B2 (en) * 1998-03-27 2004-08-31 Yissum Research Development Company Of The Hebrew University Of Jerusalem Molecular layer epitaxy method and compositions
US7476420B2 (en) * 2000-10-23 2009-01-13 Asm International N.V. Process for producing metal oxide films at low temperatures
TW548239B (en) * 2000-10-23 2003-08-21 Asm Microchemistry Oy Process for producing aluminium oxide films at low temperatures
KR20030057133A (ko) * 2001-12-28 2003-07-04 삼성전자주식회사 금속 패턴 형성용 유기금속 전구체 및 이를 이용한 금속패턴 형성방법
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US20050084610A1 (en) * 2002-08-13 2005-04-21 Selitser Simon I. Atmospheric pressure molecular layer CVD
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US20070190247A1 (en) * 2004-05-18 2007-08-16 Mecharonics Co., Ltd. Method for forming organic light-emitting layer
JP4363365B2 (ja) * 2004-07-20 2009-11-11 株式会社デンソー カラー有機ｅｌディスプレイおよびその製造方法
US20070077349A1 (en) * 2005-09-30 2007-04-05 Eastman Kodak Company Patterning OLED device electrodes and optical material
US7754906B2 (en) * 2005-10-07 2010-07-13 Air Products And Chemicals, Inc. Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
KR101488855B1 (ko) * 2006-03-10 2015-02-04 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 티타네이트, 란타네이트 및 탄탈레이트 유전막의 원자층 증착 및 화학 증기 증착용 전구체 조성물
US7456429B2 (en) * 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
US20080100202A1 (en) * 2006-11-01 2008-05-01 Cok Ronald S Process for forming oled conductive protective layer
US7722422B2 (en) * 2007-05-21 2010-05-25 Global Oled Technology Llc Device and method for improved power distribution for a transparent electrode
US7572686B2 (en) * 2007-09-26 2009-08-11 Eastman Kodak Company System for thin film deposition utilizing compensating forces
US8133555B2 (en) * 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130896A (en) * 1979-02-28 1980-10-11 Lohja Ab Oy Method and device for growing compound thin membrane
JP2005089781A (ja) * 2003-09-12 2005-04-07 Mitsui Eng & Shipbuild Co Ltd 薄膜形成装置
WO2006071126A1 (en) * 2004-12-28 2006-07-06 Universitetet I Oslo Thin films prepared with gas phase deposition technique
US20070077356A1 (en) * 2005-09-20 2007-04-05 Semiconductor Manufacturing International (Shanghai) Corporation Method for atomic layer deposition of materials using an atmospheric pressure for semiconductor devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN5011002736; ＰＵＴＫＯＮＥＮ　Ｍ: 'ＡＴＯＭＩＣ　ＬＡＹＥＲ　ＤＥＰＯＳＩＴＩＯＮ　ＯＦ　ＰＯＬＹＩＭＩＤＥ　ＴＨＩＮ　ＦＩＬＭＳ' ＪＯＵＲＮＡＬ　ＯＦ　ＭＡＴＥＲＩＡＬＳ　ＣＨＥＭＩＳＴＲＹ Ｖ１７　Ｎ７, 20070101, Ｐ６６４-６６９, ＴＨＥ　ＲＯＹＡＬ　ＳＯＣＩＥＴＹ　ＯＦ　ＣＨＥＭＩＳＴＲＹ *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8278665B2 (en) 2009-09-28 2012-10-02 Hitachi Displays, Ltd. Organic light emitting diode display
JP2016537510A (ja) * 2013-08-30 2016-12-01 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ 基板構造およびその調製方法
US10418300B2 (en) 2013-08-30 2019-09-17 Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University Substrate structure and method for preparing the same
JP2017524811A (ja) * 2014-06-12 2017-08-31 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ 可撓性有機−無機積層体を製造する方法
KR102439664B1 (ko) * 2014-06-12 2022-09-02 바스프 코팅스 게엠베하 가요성 유기물-무기물 라미네이트의 제조 방법
KR20170020765A (ko) * 2014-06-12 2017-02-24 바스프 코팅스 게엠베하 가요성 유기물-무기물 라미네이트의 제조 방법
KR20170020766A (ko) * 2014-06-13 2017-02-24 바스프 코팅스 게엠베하 유기물-무기물 라미네이트의 제조 방법
JP2017517639A (ja) * 2014-06-13 2017-06-29 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ 有機−無機積層体を製造する方法
KR102459808B1 (ko) * 2014-06-13 2022-10-28 바스프 코팅스 게엠베하 유기물-무기물 라미네이트의 제조 방법
JP2016201382A (ja) * 2015-04-07 2016-12-01 信越化学工業株式会社 太陽電池用パッシベーション膜形成方法及び太陽電池用パッシベーション膜形成装置
WO2021059332A1 (ja) * 2019-09-24 2021-04-01 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
JPWO2021059332A1 (enExample) * 2019-09-24 2021-04-01
JP7149431B2 (ja) 2019-09-24 2022-10-06 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム

Also Published As

Publication number Publication date
US20090081883A1 (en) 2009-03-26
EP2210270B1 (en) 2017-05-17
WO2009042051A3 (en) 2010-11-18
EP2210270A2 (en) 2010-07-28
WO2009042051A2 (en) 2009-04-02
CN102027603A (zh) 2011-04-20
CN102027603B (zh) 2013-11-20
US7858144B2 (en) 2010-12-28

Similar Documents

Publication Publication Date Title
JP2011506758A (ja) 有機材料を堆積する方法
US10351954B2 (en) Deposition system and method using a delivery head separated from a substrate by gas pressure
TWI396769B (zh) 用於原子層沉積之裝置
EP2193218B1 (en) Process for selective area deposition of inorganic materials
US8420168B2 (en) Delivery device for deposition
JP5149272B2 (ja) 原子層堆積法
EP2217740B1 (en) Process for selective area deposition of inorganic materials
US7572686B2 (en) System for thin film deposition utilizing compensating forces
US20090081885A1 (en) Deposition system for thin film formation
EP2102382A1 (en) Delivery device for deposition
US20140206137A1 (en) Deposition system for thin film formation

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110916

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110916

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130521

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20131029