JP5096437B2 - 有機el表示装置 - Google Patents
有機el表示装置 Download PDFInfo
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- JP5096437B2 JP5096437B2 JP2009223265A JP2009223265A JP5096437B2 JP 5096437 B2 JP5096437 B2 JP 5096437B2 JP 2009223265 A JP2009223265 A JP 2009223265A JP 2009223265 A JP2009223265 A JP 2009223265A JP 5096437 B2 JP5096437 B2 JP 5096437B2
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- 239000010408 film Substances 0.000 claims description 246
- 239000004065 semiconductor Substances 0.000 claims description 143
- 239000010409 thin film Substances 0.000 claims description 80
- 230000001681 protective effect Effects 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 32
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000005401 electroluminescence Methods 0.000 description 82
- 239000010410 layer Substances 0.000 description 82
- 238000000034 method Methods 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 14
- 238000000206 photolithography Methods 0.000 description 13
- 238000000059 patterning Methods 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Description
Claims (4)
- 薄膜トランジスタを用いた有機EL表示装置であって、
前記薄膜トランジスタは、
基板と、
前記基板の上に設けられたゲート電極と、
前記ゲート電極を覆うゲート絶縁膜と、
前記ゲート絶縁膜上に設けられた第1の半導体膜と、
前記第1の半導体膜上に設けられた第2の半導体膜と、
前記第2の半導体膜上に設けられたバックチャンネル保護絶縁膜と、を備え、
前記第1の半導体膜は、前記第2の半導体膜より高い結晶性を有し、
前記第1および第2の半導体膜は前記バックチャンネル保護絶縁膜をマスクに使用して前記ゲート電極より小さい幅でパターニングされており、
前記バックチャンネル保護絶縁膜は、感光性のある有機・無機ハイブリッド絶縁膜であり、
前記バックチャンネル保護絶縁膜の固定電荷量は、単位面積あたり3.5×1011/cm2以下である、ことを特徴とする有機EL表示装置。 - 前記第1の半導体膜の厚さは、20nm以上60nm以下である、ことを特徴とする請求項1に記載の有機EL表示装置。
- 前記第2の半導体膜の厚さは、10nm以上50nm以下である、ことを特徴とする請求項1または2に記載の有機EL表示装置。
- 前記第2の半導体膜内に含まれるリンもしくはボロンの濃度が3×1016/cm3以下である、ことを特徴とする請求項1乃至3のいずれか一項に記載の有機EL表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009223265A JP5096437B2 (ja) | 2009-09-28 | 2009-09-28 | 有機el表示装置 |
US12/805,842 US8278665B2 (en) | 2009-09-28 | 2010-08-20 | Organic light emitting diode display |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009223265A JP5096437B2 (ja) | 2009-09-28 | 2009-09-28 | 有機el表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011071440A JP2011071440A (ja) | 2011-04-07 |
JP5096437B2 true JP5096437B2 (ja) | 2012-12-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009223265A Active JP5096437B2 (ja) | 2009-09-28 | 2009-09-28 | 有機el表示装置 |
Country Status (2)
Country | Link |
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US (1) | US8278665B2 (ja) |
JP (1) | JP5096437B2 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101073272B1 (ko) * | 2009-11-04 | 2011-10-12 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치의 제조 방법 |
CN102959714A (zh) * | 2011-06-17 | 2013-03-06 | 松下电器产业株式会社 | 显示装置、显示装置中使用的薄膜晶体管及薄膜晶体管的制造方法 |
JPWO2012172617A1 (ja) * | 2011-06-17 | 2015-02-23 | パナソニック株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
CN102959712A (zh) * | 2011-06-17 | 2013-03-06 | 松下电器产业株式会社 | 薄膜晶体管以及薄膜晶体管的制造方法 |
WO2013001579A1 (ja) | 2011-06-30 | 2013-01-03 | パナソニック株式会社 | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 |
WO2013001580A1 (ja) * | 2011-06-30 | 2013-01-03 | パナソニック株式会社 | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 |
WO2013008360A1 (ja) * | 2011-07-13 | 2013-01-17 | パナソニック株式会社 | 表示装置、表示装置に用いられる薄膜トランジスタ、及び薄膜トランジスタの製造方法 |
CN103038887A (zh) | 2011-08-09 | 2013-04-10 | 松下电器产业株式会社 | 薄膜半导体器件及薄膜半导体器件的制造方法 |
WO2013021426A1 (ja) * | 2011-08-10 | 2013-02-14 | パナソニック株式会社 | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 |
CN103178004B (zh) * | 2011-12-22 | 2016-01-20 | 群康科技(深圳)有限公司 | 薄膜晶体管基板及其制作方法、显示器 |
TWI512840B (zh) * | 2012-02-14 | 2015-12-11 | Innocom Tech Shenzhen Co Ltd | 薄膜電晶體及其製作方法及顯示器 |
KR101951260B1 (ko) * | 2012-03-15 | 2019-02-25 | 삼성디스플레이 주식회사 | 박막트랜지스터, 상기 박막트랜지스터를 포함하는 표시 장치 및 상기 박막트랜지스터를 포함하는 유기 발광 표시 장치 |
JP6007445B2 (ja) * | 2012-06-08 | 2016-10-12 | 株式会社Joled | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
WO2014045543A1 (ja) * | 2012-09-21 | 2014-03-27 | 凸版印刷株式会社 | 薄膜トランジスタ及びその製造方法、画像表示装置 |
KR102427675B1 (ko) * | 2015-04-20 | 2022-08-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 및 이를 포함하는 유기 발광 표시 장치 |
KR20180045964A (ko) | 2016-10-26 | 2018-05-08 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
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JPH0990424A (ja) * | 1995-09-19 | 1997-04-04 | Sony Corp | 薄膜半導体装置 |
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2009
- 2009-09-28 JP JP2009223265A patent/JP5096437B2/ja active Active
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2010
- 2010-08-20 US US12/805,842 patent/US8278665B2/en active Active
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JP2011071440A (ja) | 2011-04-07 |
US8278665B2 (en) | 2012-10-02 |
US20110073863A1 (en) | 2011-03-31 |
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