CN100376035C - 半导体器件以及制造这种半导体器件的方法 - Google Patents

半导体器件以及制造这种半导体器件的方法 Download PDF

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CN100376035C
CN100376035C CNB038136767A CN03813676A CN100376035C CN 100376035 C CN100376035 C CN 100376035C CN B038136767 A CNB038136767 A CN B038136767A CN 03813676 A CN03813676 A CN 03813676A CN 100376035 C CN100376035 C CN 100376035C
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伊藤吉博
门田道雄
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Murata Manufacturing Co Ltd
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Abstract

本发明提供了一种具有极佳结晶度和极佳电性能的半导体器件，该半导体器件中包括一个具有极佳表面平滑度的ZnO薄膜。主要含有ZnO的ZnO基薄膜(一个n型接触层6，一个n型覆盖层7，一个活性层8，一个p型覆盖层9，和一个p型接触层10)通过ECR溅射方法或类似方法在ZnO基片1的锌极性表面1a上依次形成。透明电极3和p侧电极4通过蒸发方法或类似方法在p型接触层10的表面上形成，n侧电极5是在ZnO基片1的氧极性表面1b上形成。

Description

半导体器件以及制造这种半导体器件的方法
技术领域
本发明涉及一种半导体器件和一种制造该半导体器件的方法。具体地说，本发明涉及一种使用氧化锌作为半导体材料的半导体器件，以及制造这种半导体材料的方法。
背景技术
氧化锌(ZnO)是一种II-VI化合物半导体。使ZnO与MgO，CdO或类似物形成混晶，能改变ZnO的带隙能量，ZnO可以具有一种量子阱多层结构以及类似结构。而且，由于激子的键能非常大，所以预计可应用于发光器件。由于ZnO在可见光区域是透明的，所以预计可应用于驱动液晶显示器用的透明薄膜晶体管。
同时，ZnO具有纤锌矿结构(六方晶系)。如图9中所示，ZnO在c轴方向(垂直方向)没有对称中心，并且具有基于分子结构的极性。
即是说，ZnO具有锌极性(+c极性)，其中与Zn原子键合的三个键5 1指向下方，与氧原子键合的三个键52指向上方，如图9(a)中所示，而且ZnO具有氧极性(-c极性)，其中与Zn原子键合的三个键51指向上方，与氧原子键合的三个键52指向下方，如图9(b)中所示。
上述极性是指上述键的一种方向，并非是指结束该表面的一个元素。
已经有关于通过PMBE(等离子体辅助的分子束取向生长)方法在蓝宝石基片上形成具有氧极性的ZnO薄膜的报道(应用物理通讯，第80卷，第8期，第1358-1360页(2002)；这里称为“第一已知技术”)。
有报道称，在蓝宝石基片上形成了具有Ga极性的GaN膜，并已经通过控制成膜条件能够在上述GaN上形成具有锌极性或氧极性的ZnO薄膜(应用物理通讯，第77卷，第22期，第3571-3573页(2000)；这里称为“第二已知技术”)。
另外，已经报道了一种技术，能表征在基片上形成的ZnO压电膜或类似物的极性(日本未审查专利申请公开2001-144328；这里称为“第三已知技术”)。
在上述第三已知技术中，可以根据基片种类，形成具有+表面(锌极性)或-表面(氧极性)的压电膜(ZnO膜)，而且通过改变成膜条件，例如基片的加热温度，能控制在基片上形成的ZnO压电膜或类似物的极性。
关于上述第一已知技术，虽然已经通过同轴冲击碰撞离子散射光谱(CAICISS)确定了在蓝宝石基片上形成的ZnO薄膜具有氧极性。但是，这种ZnO膜中保留有大量六方晶粒，其表面形状不平坦，从而无法获得具有要求表面平滑度的ZnO薄膜。
即是说，由于第一已知技术所形成的ZnO薄膜表面平滑度很差，所以在用这种ZnO薄膜形成半导体器件时，会有电流通过晶界，而且在晶粒的凸起部分上会发生电场的集中。因此，器件的工作可能会变得不稳定，或者器件可能被损坏。
在第二已知技术中，可以通过改变成膜条件控制ZnO薄膜的极性。这样，就可以在GaN上形成具有锌极性或氧极性的ZnO薄膜。但是，在GaN上形成ZnO膜的过程中基片的温度会升高，从而会使GaN的组成元素Ga扩散进入ZnO薄膜中。
由于Ga起ZnO供体的作用，所以如果Ga扩散进入ZnO薄膜，则会降低ZnO的电阻。
而且很难控制上述扩散过程，所以会导致半导体器件的性能发生差异。
在上述第二已知技术中，由于GaN和ZnO之间存在晶格不匹配，导致发生晶格缺陷而缓和晶格不匹配。结果是，ZnO薄膜的结晶度变差，从而导致电性能变差。
上述第三已知技术中公开了形成具有锌极性或氧极性压电薄膜的方法。但是，没有关于极性对薄膜的表面形状和电性能的影响的报导。而且，由于基片材料不同于压电膜材料，所以与第二已知技术一样，晶格不匹配会造成结晶度变差，而且在获得高的可靠，所需和极佳电性能方面也存在问题。
本发明是针对上述情况提出的。因此，本发明的目的是提供一种半导体器件，其中的ZnO薄膜具有极佳的表面平滑度，并具有极佳的结晶度和极佳的电性能，并提供一种制造该半导体器件的方法。
发明内容
本发明的发明人为了获得具有极佳表面平滑度的ZnO薄膜进行了深入的研究。结果发现，通过在主要含有氧化锌的单晶基片的锌极性表面上形成ZnO薄膜，能获得一种具有极佳表面平滑度和结晶度以及极佳电性能的半导体器件。
本发明就是基于上述发现的。本发明半导体器件的特征是，主要含有氧化锌的单晶基片具有一个锌极性表面和一个氧极性表面，而且有至少一层主要含有氧化锌的薄膜位于上述锌极性表面上。通过这种方法能够形成具有极佳表面平滑度和结晶度的薄膜。
本发明的发明人考察了上述薄膜的极性，证明该薄膜具有锌极性。
因此，本发明半导体器件的特征是，上述薄膜具有锌极性。即是证明了在ZnO基片的锌极性表面上形成的ZnO基薄膜具有锌极性。
本发明半导体器件的特征是，上述薄膜由一个多层膜组成，而且该多层膜构成一个发光层或一个开关部分。
具体地说，上述薄膜由该多层膜组成，该多层膜构成发光层，所以该发光层具有极佳的表面平滑度和结晶度。因此，能获得一个具有极佳电性能的发光器件，例如LED和LD。
或者，上述薄膜由该多层膜组成，该多层膜构成开关部分，所以，即使当光照射到活性层时，也能抑制电导率的变化。因此，很容易获得能防止开关元件性能变差的半导体器件，例如TFT。
因为上述半导体器件是由一个具有极佳表面平滑度和结晶度的ZnO基多层膜所提供的，所以能很容易地获得具有极佳电性能的半导体器件，例如发光元件和薄膜晶体管。
本发明制造半导体器件方法的特征是包括以下步骤：确定主要含有氧化锌的单晶基片表面是锌极性表面还是氧极性表面，在上述锌极性表面上形成至少一层主要含有氧化锌的薄膜。而且，该方法的特征是，上述薄膜具有锌极性。
按照上述制造方法，能很容易和可靠地在氧化锌基片的锌极性表面上形成一个符合要求的ZnO基薄膜。
即是说，确定了该ZnO基片表面是锌极性表面还是氧极性表面之后，在上述锌极性表面上形成至少一层主要含有ZnO的薄膜。由于上述ZnO薄膜具有锌极性，所以能很容易地在锌极性表面上形成ZnO基薄膜。
本发明半导体器件的特征是，用等离子体发生室和成膜室建立一个溅射设备，并使用该溅射设备进行溅射处理，形成上述薄膜。
在上述制造方法中，由于该膜是通过溅射处理形成的，所以能以不太昂贵的方式获得具有所需电性能的半导体器件。而且，由于该等离子体发生室和成膜室是分开的，所以能使等离子体对半导体器件所造成的破坏降至最低。
优选采用选自电子回旋共振等离子体溅射方法，电感耦合等离子体溅射方法，螺旋波激发等离子体溅射方法，离子束溅射方法和簇束溅射方法的任何方法进行上述溅射处理。或者，优选采用选自分子束取向生长方法，金属有机化学蒸气沉积方法，激光分子束取向生长方法和激光烧蚀方法的任何方法对上述薄膜进行处理。
附图说明
图1是本发明一种半导体器件实施方式(第一实施方式)的截面示意图。
图2是ZnO的极性特征图。
图3是在ZnO基片的锌极性表面上形成的ZnO薄膜表面形状的截面示意图。
图4示是在ZnO基片的锌极性表面上形成的ZnO薄膜极性特征图。
图5是本发明一种半导体器件第二实施方式的截面示意图。
图6是本发明一种半导体器件第三实施方式的截面示意图。
图7是在ZnO基片的锌极性表面上形成的ZnO薄膜表面形状的显微照片。
图8是在ZnO基片的氧极性表面上形成的ZnO薄膜表面形状的显微照片。
图9是ZnO晶体结构图。
具体实施方式
以下参考图具体说明本发明的实施方式。
图1是作为本发明一种半导体器件实施方式(第一实施方式)的发光二极管(这里称为“LED”)的截面示意图。
在图1中，数字表示一个主要含有n型传导方式导电ZnO的单晶基片(这里称为“ZnO基片”)，该ZnO基片1具有一个锌极性表面1a和一个氧极性表面1b。
在该LED中，有一个发光层2位于该ZnO基片1的锌极性表面1a上，而且有一个大约150纳米膜厚的由氧化铟锡(这里称为“ITO”)制成的透明电极3位于该发光层2的表面上。而且，有一个大约300纳米总膜厚的p侧电极4位于该透明电极3表面的大致中央部位，该p侧电极4中依次层压有一个Ni膜，一个Al膜，和一个Au膜。
有一个大约300纳米总膜厚的n侧电极5位于该ZnO基片1的氧极性表面1b上，同时该n侧电极5中依次层压有一个Ti膜和一个Au膜。
具体地说，上述发光层2由一个多层膜组成，其中依次层压有一个n型接触层6，一个n型覆盖层7，一个活性层8，一个p型覆盖层9，和一个p型接触层10。即，该活性层8被固定在n型覆盖层7和p型覆盖层9之间，该n型覆盖层7连接至n侧电极5，而n型接触层6和ZnO基片1位于它们之间，该p型覆盖层9连接至透明电极3，而p型接触层10位于它们之间。
活性层8是由CdxZn1-xO(其中x满足0≤x<1，例如是0.1)形成的，这是一种CdO和ZnO的混晶，其膜厚是大约200纳米。活性层8通过作为n型载流子的电子和作为p型载流子的空穴发生再结合而发光，所发出光的波长是由带隙能量决定的。
由于载流子必须被有效限制在活性层8中，所以n型覆盖层7和p型覆盖层9的带隙能量应大于上述活性层8的带隙能量，而且是由MgyZn1-yO(其中y满足0≤y<1，例如是0.2)组成的，这是一种MgO和ZnO的混晶。该n型覆盖层7的膜厚大约是2000纳米，p型覆盖层9的膜厚大约是600纳米。
n型接触层6和p型接触层10都是由膜厚大约为200纳米的ZnO形成的。
以下说明一种制造上述LED的方法。
首先，采用SCVT(晶种化学蒸气迁移)方法或类似方法制备ZnO单晶。从ZnO单晶中切割一个垂直于晶轴c轴方向的表面，对其进行镜面抛光，制备一个ZnO基片，并检测其极性。
确定ZnO等具有压电特性的化合物半导体极性的已知方法例子包括，同轴冲击碰撞离子散射光谱(CAICISS)方法(应用物理通讯，第72卷(1998)第824页)，会聚束电子衍射(CBED)方法(应用物理通讯，第69卷(1996)第337页)，带扫描非线性介电显微镜(SNDM)方法(Sentangijutsu Symposium“Atsudenzairyoto Danseiha Device”(高技术论坛“压电材料和弹性波器件”)，(2000年2月)第23-30页)。在本实施方式中，采用SNDM(扫描非线性介电显微镜)方法检测ZnO基片的极性。
在SNDM中，在施加电势的同时对ZnO基片1进行扫描检测，检测到含有ZnO基片1极性的强度信号。
另一方面，当施加电势为“0“时，由于没有施加电势，所以检测不到含有极性的强度信号。
在SNDM方法中，对ZnO基片1施加电势时，其强度信号与施加电势为“0”时相比，向+侧或-侧位移。因此，在SNDM方法中，以施加电势为“0”时的强度作为基准信号，以施加电势同时对ZnO基片1进行扫描检测时测得的强度信号作为极性信号。然后，根据极性信号相对基准信号向+侧或-侧的位移确定ZnO基片的极性。
在本实施方式中，根据SNDM的信号情况，极性信号相对基准信号向-侧的位移表示+极性(锌极性)，而极性信号相对基准信号向+侧的位移表示-极性(氧极性)。
图2(a)和2(b)所示是ZnO基片1的极性特征图。水平轴表示扫描步长(微米)，垂直轴表示强度(原子单位；任意单位)。
在图2中，箭头X表示的方向代表ZnO基片1的极性信号，而箭头X′表示的方向代表没有施加电势时的基准信号。
因此能够确定的是，当极性信号如图2(a)中所示相对基准信号向-侧位移时，ZnO基片1的极性表面是锌极性表面，当极性信号如图2(b)中所示相对基准信号向+侧位移时，ZnO基片1的极性表面是氧极性表面。
如上所述确定了ZnO基片1的极性之后，使用电子回旋共振(这里称为“ECR”)溅射设备，将ZnO薄膜层合在ZnO基片1的锌极性表面1a上。
即，准备一个被分成等离子体发生室和成膜室的ECR溅射设备，ZnO基片1被置于成膜室中的一个预定位置，其锌极性表面1a向上，将该ZnO基片l加热至300℃到800℃的温度。
接着，向等离子体发生室中输入活性气体，例如氧气，和等离子体发生气体，例如氩气，以能在回旋加速器中产生共振的频率(2.45千兆赫)发出微波，在等离子体发生室中产生等离子体。
然后对溅射靶施加高频功率(例如,150瓦)，在等离子体发生室中所产生等离子体的辅助下对靶材料(ZnO)溅射，通过反应溅射在ZnO基片1表面上形成由ZnO制成的n型接触层6。
下一步，采用由一所需混合比例的烧结MgO和ZnO制成的靶进行反应溅射，形成由MgyZnl-yO(其中0≤y<1)制成的n型覆盖层7。
进行类似的反应溅射，依次形成由CdxZnl-xO(其中0≤x<1)制成的活性层8，由MgyZnl-yO(其中0≤y<1)制成的p型覆盖层9，以及由ZnO制成的p型接触层10。
通过控制反应时间，按照要求设定各个薄膜的厚度。
Ti膜和Au膜依次在ZnO基片1的氧极性表面1b上形成，从而通过蒸发方法形成n侧电极5，ITO膜通过蒸发方法在p型接触层10的表面上形成，从而形成透明电极3，然后依次层压Ni，Al，和Au，形成p侧电极4。
如上所述，在第一实施方式中，由ZnO基多层膜组成的发光层2在ZnO基片1的锌极性表面1a上形成，依次层压具有极佳表面平滑度的ZnO基薄膜。结果是，n型覆盖层7的表面变成一个包括光滑平台11和线形台阶12的薄膜，如图3(图1中所示部分A的放大图)中所示，并且具有极佳的表面平滑度。因此，表面上不会残留任何晶粒和不平坦部分，而且能获得具有极佳表面平滑度的ZnO薄膜。
不仅就n型覆盖层7而言，而且可以用类似方法获得用于n型接触层6，活性层8，p型覆盖层9和p型接触层10的如图3中所示具有极佳表面平滑度的薄膜。
由于上述ZnO基薄膜具有极佳的表面平滑度，所以没有电流通过晶界，也没有电场集中在ZnO膜表面上。因此，电子移动时不会发生散射，能够获得具有很高电子迁移率，极佳结晶度和极佳电性能的LED。
在上述第一实施方式中，由于使用了ECR溅射设备，而且该ZnO基薄膜是采用溅射处理方法形成的，所以不需要单独配置昂贵的设备，能够不太昂贵地形成薄膜。
而且，由于等离子体发生室和成膜室是分开的，所以能使等离子体对ZnO薄膜造成的损坏降至最低，能够获得高质量薄膜。
在本实施方式中，采用SNDM进一步检测在ZnO基片1表面上形成的ZnO薄膜极性。
即是说，根据验证仪的验证末端半径以及ZnO样品的介电常数，确定SNDM在深度方向的灵敏度。在ZnO的情况下，深度方向的检测范围大致等于验证仪的验证末端半径。因此，使上述验证末端半径小于膜厚，则不论作为基底的ZnO基片1的极性如何，都能确定ZnO薄膜的极性。
图4是ZnO薄膜的极性特征图。如图2(a)和2(b)中所示，水平轴表示扫描步长(微米)，垂直轴表示强度(原子单位)，箭头X表示的方向代表ZnO基片1的极性信号，箭头X′表示的方向代表不施加电势时的基准信号。
从图4中能很清楚地看出，由于极性信号相对基准信号向一侧移动，所以ZnO薄膜具有锌极性。即，是在ZnO基片1的锌极性表面上形成的ZnO基薄膜具有锌极性。
在本实施方式中，使用一种双重异质结构作为发光层2，其中活性层8被固定在p型覆盖层9和n型覆盖层7之间。但是，也可以使用pn结型结构，MIS(金属-绝缘层-半导体层)结构，或单异质结构。
图5是本发明半导体器件第二实施方式的激光二极管(以后称为“LD”)的截面示意图。
在LD中，有一个发光层14位于导电性ZnO基片13的锌极性表面1 3a上，有一个大约300纳米总膜厚的p侧电极15位于发光层14表面上，该p侧电极15中依次层压有一个Ni膜，一个Al膜，和一个Au膜。有一个大约300纳米总膜厚的n侧电极16位于ZnO基片13的氧极性表面13b上，n侧电极16中依次层压有一个Ti膜和一个Au膜。
具体地说，上述发光层14由一个多层膜组成，其中依次层压有一个n型接触层17，一个n型覆盖层18，一个n型光导层19，一个活性层20，一个p型光导层21，一个p型覆盖层22，一个电流限制层23，和一个p型接触层24。
即是说，该活性层20固定在n型覆盖层18和p型覆盖层22之间，而n型光导层19和p型光导层21分别位于它们之间。
该n型覆盖层18连接至n侧电极16，而n型接触层17和ZnO基片13位于它们之间，而且该p型覆盖层22连接至p侧电极15，而电流限制层23和p型接触层24它们之间。
具体地说，活性层20具有一种多量子阱结构，其中交替层压有每层厚3纳米的2到5层阻挡层和量子阱层，阻挡层由MgyZn1-yO(其中y满足0≤y<1，例如是0.1)组成，量子阱层由CdxZn1-xO(其中x满足0≤x<1，例如是0.1)组成。
当活性层20的折射率大于n型覆盖层18和p型覆盖层22的折射率时，光线就限制在该活性层20中。但是，如果因为该活性层20是一个薄膜而无法充分限制光线时，则必须防止光线从活性层20中发生泄露。因此，在活性层20和覆盖层18之间插入折射率介于n型覆盖层18和活性层20之间的n型光导层19，在活性层20和覆盖层22之间插入折射率介于p型覆盖层22和活性层20之间的p型光导层21，从而构成光学波导的一部分。
大约1500纳米膜厚的由ZnO制成的n型接触层17位于ZnO基片13的锌极性表面13a上。大约2000纳米膜厚的由MgyZn1-yO(其中y满足0≤y<1，例如是0.2)制成的n型覆盖层18位于n型接触层17的表面上。而且，大约40纳米膜厚的由ZnO制成的n型光导层19位于n型覆盖层18的表面上。
将具有上述多阱型结构的活性层20层压在n型光导层19的表面上。大约40纳米膜厚的由MgyZn1-yO(其中y满足0≤y<1，例如是0.2)制成的p型光导层21位于活性层20的表面上。而且，大约2000纳米膜厚的由MgyZn1-yO(其中y满足0≤y<1，例如是0.2)制成的p型覆盖层22位于p型光导层21的表面上。
另外，为了只在振荡区域通过电流，则有一个400纳米膜厚的由MgyZn1-yO(其中y满足0≤y<1，例如是0.2)制成的电流限制层23位于p型覆盖层22的表面上，同时保持具有凹槽部分23a的预定形状。p型接触层24位于p型覆盖层22的表面上，具有一个覆盖着电流限制层23的呈字母T形状的横截面。
还能通过基本类似于第一实施方式的方法和过程制造上述LD。
即是，首先采用SCVT方法或类似方法制备ZnO单晶。从ZnO单晶上切割一个垂直于晶轴c轴方向的表面，并对其进行镜面抛光，从而制备ZnO基片，并用SNDM检测其极性。
接着，如第一实施方式中所述，准备ECR溅射设备，将ZnO基片13置于成膜室中的预定位置处，使锌极性表面13a向上，将ZnO基片1加热至300℃到800℃的温度。
然后，向等离子体发生室中输入活性气体，例如氧气，和等离子体发生气体，例如氩气，产生微波，在等离子体发生室中产生等离子体。对一种靶材料(ZnO)溅射，采用反应溅射方法在ZnO基片13的表面上形成ZnO制成的n型接触层17。
将靶材料更换成要求的材料，采用相似方法进行反应溅射，依次形成n型接触层17，n型覆盖层18，n型光导层19，活性层20，n型光导层21，p型覆盖层22以及电流限制层23。
形成电流限制层23之后，从溅射设备中临时取出具有该膜的ZnO基片13。对上述电流限制层23的表面施加光致抗蚀剂，采用已知的照相平版技术在该抗蚀膜上印刷图案，并用一种碱性溶液，例如NaOH，进行蚀刻处理，使电流限制层23形成一预定形状。
再次将上述ZnO基片13置于ECR溅射设备中的预定位置处，进行反应溅射，使由ZnO制成的p型接触层24具有字母T形状的横截面。
然后，如第一实施方式中所述，在ZnO基片13的氧极性表面13b上依次形成Ti膜和Au膜，采用蒸发方法形成n侧电极16，并采用蒸发方法在p型接触层24的表面上依次形成Ni，Al和Au层，从而形成p侧电极15。
如上所述，同样在第二实施方式中，如第一实施方式中所述，在ZnO基片13的锌极性表面13a上形成由ZnO基多层薄膜组成的发光层14，从而获得具有一个光滑平台和一个线形台阶的ZnO基薄膜。以这种方式，由于极佳表面平滑度的原因，不会有电流通过晶界，也不会有电场集中在ZnO膜的表面上。因此，电子移动过程中不会发生散射，电子迁移率变高，结晶度变好，能够获得具有极佳电性能的LD。
在上述第二实施方式中，如第一实施方式中所述，由于使用了ECR溅射设备，并且采用溅射处理形成ZnO基薄膜，所以不需要独立的昂贵设备，能够以不太昂贵的方式形成薄膜。而且，由于等离子体发生室和成膜室是分开的，所以能使等离子体对ZnO薄膜造成的损坏降至最低，能获得高质量薄膜。
图6所示是本发明一种半导体器件第三实施方式的薄膜晶体管(以下称为“TFT”)的截面示意图。该TFT由一个绝缘ZnO基片25，大致位于该ZnO基片25中央部位的50纳米膜厚门电极26，位于该ZnO基片25上并覆盖该门电极26的200纳米膜厚栅极绝缘层27，位于栅极绝缘层27上的50纳米膜厚活性层28，大致位于该活性层28中央部位的大约200纳米膜厚的电路保护层29，和覆盖部分电路保护层29的大约200纳米膜厚的源极30与漏极31组成。
在上述TFT中，开关部分是由除了ZnO基片25之外的部件组成的，即，门电极26，栅极绝缘层27，活性层28，通道保护层29，源极30和漏极31。由这些部件组成的开关部分位于ZnO基片25的锌极性表面25a上。
制造门电极26，源极30，和漏极31的ZnO中掺杂有Ga，因此具有低电阻，而制造栅极绝缘层27和通道保护层29的ZnO中掺杂有Ni，因此具有高电阻。
活性层28是由不掺杂的ZnO薄膜形成的。控制形成薄膜时的氧分压，能调节薄膜中的氧浓度，从而使形成的活性层具有n型传导方式。
还能通过使用基本类似于第一和第二实施方式的ECR溅射和照相平版技术容易地制造上述TFT。
即是，制备ZnO基片，然后确定极性。再后，使用ECR溅射设备，采用Ga掺杂的ZnO作为靶材料进行反应溅射，在ZnO基片25的锌极性表面25a上形成ZnO膜(ZnO∶Ga)。
从ECR溅射设备中取出制得的ZnO基片25。在上述ZnO膜上施加一种光致抗蚀剂，采用已知的照相平版技术在抗蚀膜上形成图案，然后使用一种碱性溶液，例如NaOH，进行蚀刻处理，形成门电极26。
以Ni掺杂的ZnO作为靶材料进行反应溅射，在ZnO基片25上形成栅极绝缘层27，从而覆盖门电极。然后，以不掺杂的ZnO作为靶材料进行反应溅射，并控制氧分压，形成活性层28。
然后，以Ni掺杂的ZnO作为靶材料进行反应溅射，形成ZnO膜(ZnO∶Ni膜)。如上所述，在制得的ZnO膜上施加一种光致抗蚀剂，采用照相平版技术对抗蚀膜进行印刷，然后使用一种碱性溶液，例如NaOH，进行蚀刻处理，形成通道保护层29。
然后，用Ga掺杂的ZnO作为靶材料进行反应溅射，如上所述在制得的ZnO：Ga膜上施加一种光致抗蚀剂，采用照相平版技术对抗蚀膜进行印刷，然后使用一种碱性溶液，例如NaOH，进行蚀刻处理，形成源极30和漏极31。
如上所述，在第三实施方式中，由于TFT是由一个ZnO基多层膜形成的，即使活性层28暴露于光线中时，也能抑制电导率的变化。
即是，当活性层是用非晶态硅(a-Si)以前述方式形成时，由于a-Si会在受到光照射时变成具有导电性，所以会使开关元件的性能变差。另一方面，在第三实施方式中，由于活性层28是由带隙大约是3.3电子伏特并对可见光透明的ZnO薄膜制成的，所以即使对活性层28照射光线，也能抑制电导率发生变化，因此能防止开关元件的性能变差。
而且，通过以集成方式形成TFT作为光电开关元件或第一实施方式中所示LED的上部，就能增加入射在光电开关元件上的光线，或者增加从发光层发出的光线，从而增开启比例。
本发明并不限于上述一些实施方式。
在上述实施方式中，采用ECR溅射方法形成ZnO基薄膜。但是，也可以采用电感耦合等离子体(ICP)溅射方法螺旋波激发的等离子体(HWP)溅射方法，离子束溅射方法，簇束溅射方法，或类似方法。或者，可以采用分子束取向生长(MBE)方法，金属有机化学蒸气沉积(MOCVD)方法，激光分子束取向生长(激光MBE)方法，激光烧蚀方法，或者溅射方法以外的类似方法形成ZnO基薄膜。
以下说明本发明的一些具体实施方式。
本发明的发明人使用ECR溅射设备，在ZnO基片的锌极性表面上形成了ZnO薄膜，制备了用于实施例的试片。而且，在ZnO基片的氧极性表面上形成ZnO薄膜，制备了用于对比例的试片。
即是，准备一个分成等离子体发生室和成膜室的ECR溅射设备。将ZnO基片置于成膜室中的预定位置处，并将该基片加热至620℃的温度。然后，向等离子体发生室中通入20sccm的氩气作为溅射气体，10sccm的氧气作为反应气体，并进行微放电产生等离子体。对溅射靶应用150瓦的高频电场，进行溅射处理，在ZnO基片的锌极性表面上形成ZnO薄膜，在另一个ZnO基片的氧极性表面上形成另一个ZnO薄膜，从而分别制备了实施例和对比例的试片。
本发明的发明人用原子力显微镜观察了ZnO薄膜的表面形状。
图7所示是实施例的ZnO薄膜。图8所示是在ZnO基片的氧极性表面上形成的对比例ZnO薄膜。
从图8中能清楚地看出，对比例的ZnO薄膜是岛状的，因此存在晶界。
另一方面，从图7中所示的实施例ZnO薄膜能够确定，可以获得一个具有包括光滑平台和基本线形台阶的表面形状的薄膜。
因此，在ZnO基片的锌极性表面上形成的ZnO薄膜与在ZnO基片的氧极性表面上形成的ZnO薄膜相比，前者明显具有极佳的表面平滑度。
本发明的发明人计算了ZnO薄膜的均方根表面粗糙度RMS，并评价了表面粗糙度。
结果是，对比例ZnO薄膜的均方根表面粗糙度RMS是20.4纳米，而实施例ZnO薄膜的均方根表面粗糙度RMS是1.4纳米。因此，通过在锌极性表面上形成ZnO薄膜，与在氧极性表面上形成ZnO薄膜相比，前者ZnO基片的表面平滑度有显著增加。
本发明的发明人进行了空穴测量，并计算了电子迁移率。
当结晶度极佳时，由于电子在移动时没有因为晶体缺陷而发生散射，因此迁移率增加。但是，如果存在晶体缺陷，则因为电子在移动时会因为晶体缺陷而发生散射，迁移率就降低。
因此，通过计算电子迁移率能评价结晶度和电性能的水平。
本发明的发明人采用蒸发方法在每个实施例和对比例的ZnO薄膜上依次形成了一个Ti膜和一个Au膜，获得电极，并进行了空穴测量，从而测定了电子迁移率。
结果是，对比例的电子迁移率是2平方厘米/伏·秒，而实施例的电子迁移率比较大，是30平方厘米/伏·秒。因此能够确定，与对比例相比，实施例的结晶度和电性能非常好。
工业应用
如上所述，本发明的电子元件能作为图形设备的部件，特别适合用于图形设备中所用光学摄像管的发光元件。

Claims (9)

1.一种半导体器件，其特征在于一个主要含有氧化锌的单晶基片具有一个锌极性表面和一个氧极性表面，而且有至少一层主要含有氧化锌的薄膜位于该锌极性表面上。
2.如权利要求1所述半导体器件，其特征在于该薄膜具有锌极性。
3.如权利要求1或2所述半导体器件，其特征在于该薄膜是一个多层膜，该多层膜构成一个发光层。
4.如权利要求1或2所述半导体器件，其特征在于该薄膜是一个多层膜，该多层膜构成一个开关部分。
5.一种制造半导体器件的方法，该方法的特征是包括以下步骤：确定一个主要含有氧化锌的单晶基片表面是锌极性表面还是氧极性表面；在该锌极性表面上形成至少一层主要含有氧化锌的薄膜。
6.如权利要求5所述制造半导体器件的方法，其特征在于该薄膜具有锌极性。
7.如权利要求5或6所述制造半导体器件的方法，其特征在于用等离子体发生室和成膜室建立一个溅射设备；并采用该溅射设备进行溅射处理，形成该薄膜。
8.如权利要求7所述制造半导体器件的方法，其特征在于采用选自电子回旋共振等离子体溅射方法，电感耦合等离子体溅射方法，螺旋波激发的等离子体溅射方法，离子束溅射方法和簇束溅射方法中的任何一种方法进行溅射处理。
9.如权利要求5或6所述制造半导体器件的方法，其特征在于采用选自分子束取向生长方法，金属有机化学蒸气沉积方法，激光分子束取向生长方法，和激光烧蚀方法中的任意一种方法形成该薄膜。
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