CN100514582C - 干蚀刻氧化物半导体膜的方法 - Google Patents

干蚀刻氧化物半导体膜的方法 Download PDF

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Publication number
CN100514582C
CN100514582C CNB200710140773XA CN200710140773A CN100514582C CN 100514582 C CN100514582 C CN 100514582C CN B200710140773X A CNB200710140773X A CN B200710140773XA CN 200710140773 A CN200710140773 A CN 200710140773A CN 100514582 C CN100514582 C CN 100514582C
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China
Prior art keywords
etching
film
dry ecthing
oxide semiconductor
semiconductor film
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Expired - Fee Related
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CNB200710140773XA
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Chinese (zh)
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CN101123194A (zh
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张建六
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CNB200710140773XA 2006-08-09 2007-08-09 干蚀刻氧化物半导体膜的方法 Expired - Fee Related CN100514582C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006216857 2006-08-09
JP2006216857A JP4999400B2 (ja) 2006-08-09 2006-08-09 酸化物半導体膜のドライエッチング方法

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CN101123194A CN101123194A (zh) 2008-02-13
CN100514582C true CN100514582C (zh) 2009-07-15

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US (1) US7767106B2 (https=)
JP (1) JP4999400B2 (https=)
CN (1) CN100514582C (https=)

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