TW219405B - - Google Patents

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Publication number
TW219405B
TW219405B TW080108722A TW80108722A TW219405B TW 219405 B TW219405 B TW 219405B TW 080108722 A TW080108722 A TW 080108722A TW 80108722 A TW80108722 A TW 80108722A TW 219405 B TW219405 B TW 219405B
Authority
TW
Taiwan
Prior art keywords
gas
erosion
electric
processed
gasification
Prior art date
Application number
TW080108722A
Other languages
English (en)
Chinese (zh)
Original Assignee
Tokyo Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Co Ltd filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW219405B publication Critical patent/TW219405B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Static Random-Access Memory (AREA)
TW080108722A 1990-10-19 1991-11-05 TW219405B (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28315590 1990-10-19
JP30036190 1990-11-05

Publications (1)

Publication Number Publication Date
TW219405B true TW219405B (https=) 1994-01-21

Family

ID=26554921

Family Applications (1)

Application Number Title Priority Date Filing Date
TW080108722A TW219405B (https=) 1990-10-19 1991-11-05

Country Status (6)

Country Link
US (1) US5302236A (https=)
EP (1) EP0482519B1 (https=)
JP (1) JP3390814B2 (https=)
KR (2) KR910010516A (https=)
DE (1) DE69121047T2 (https=)
TW (1) TW219405B (https=)

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JP2787646B2 (ja) 1992-11-27 1998-08-20 三菱電機株式会社 半導体装置の製造方法
DE4315435C2 (de) * 1993-05-08 1995-03-09 Itt Ind Gmbh Deutsche Verfahren zum selektiven Ätzen von auf einem Halbleitersubstrat angeordneten Isolier- und Pufferschichten
JP2720763B2 (ja) * 1993-09-17 1998-03-04 日本電気株式会社 半導体装置の製造方法
US5399237A (en) * 1994-01-27 1995-03-21 Applied Materials, Inc. Etching titanium nitride using carbon-fluoride and carbon-oxide gas
JPH08153708A (ja) * 1994-11-29 1996-06-11 Nec Corp エッチング装置およびエッチング方法
JP3778299B2 (ja) * 1995-02-07 2006-05-24 東京エレクトロン株式会社 プラズマエッチング方法
US5702567A (en) * 1995-06-01 1997-12-30 Kabushiki Kaisha Toshiba Plurality of photolithographic alignment marks with shape, size and spacing based on circuit pattern features
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US5814563A (en) * 1996-04-29 1998-09-29 Applied Materials, Inc. Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas
US5928967A (en) * 1996-06-10 1999-07-27 International Business Machines Corporation Selective oxide-to-nitride etch process using C4 F8 /CO/Ar
EP0822582B1 (en) * 1996-08-01 2003-10-01 Surface Technology Systems Plc Method of etching substrates
GB9616225D0 (en) 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
KR19980064466A (ko) * 1996-12-23 1998-10-07 윌리엄비.켐플러 이산화탄소로 실리콘 산화물을 에칭하는 공정
US5882535A (en) * 1997-02-04 1999-03-16 Micron Technology, Inc. Method for forming a hole in a semiconductor device
KR100458085B1 (ko) * 1997-06-30 2005-02-23 주식회사 하이닉스반도체 반도체장치제조방법
US6277720B1 (en) * 1997-06-30 2001-08-21 Texas Instruments Incorporated Silicon nitride dopant diffusion barrier in integrated circuits
US6187685B1 (en) 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
US5866485A (en) * 1997-09-29 1999-02-02 Siemens Aktiengesellschaft Techniques for etching a silicon dioxide-containing layer
US6340435B1 (en) * 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
JPH11354499A (ja) * 1998-04-07 1999-12-24 Oki Electric Ind Co Ltd コンタクトホール等の形成方法
US6455232B1 (en) 1998-04-14 2002-09-24 Applied Materials, Inc. Method of reducing stop layer loss in a photoresist stripping process using a fluorine scavenger
JP2991192B1 (ja) 1998-07-23 1999-12-20 日本電気株式会社 プラズマ処理方法及びプラズマ処理装置
US6417013B1 (en) 1999-01-29 2002-07-09 Plasma-Therm, Inc. Morphed processing of semiconductor devices
JP3241020B2 (ja) 1999-03-26 2001-12-25 日本電気株式会社 半導体装置の製造方法
US6255179B1 (en) 1999-08-04 2001-07-03 International Business Machines Corporation Plasma etch pre-silicide clean
US20030010354A1 (en) * 2000-03-27 2003-01-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber
US6500356B2 (en) * 2000-03-27 2002-12-31 Applied Materials, Inc. Selectively etching silicon using fluorine without plasma
US6436841B1 (en) 2001-09-10 2002-08-20 Taiwan Semiconductor Manufacturing Company Selectivity oxide-to-oxynitride etch process using a fluorine containing gas, an inert gas and a weak oxidant
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
JP4495471B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US20060105114A1 (en) * 2004-11-16 2006-05-18 White John M Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7678710B2 (en) * 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7645710B2 (en) * 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US20080124937A1 (en) * 2006-08-16 2008-05-29 Songlin Xu Selective etching method and apparatus
WO2008039845A2 (en) * 2006-09-26 2008-04-03 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
JP2010245101A (ja) * 2009-04-01 2010-10-28 Hitachi High-Technologies Corp ドライエッチング方法
JP6604911B2 (ja) * 2016-06-23 2019-11-13 東京エレクトロン株式会社 エッチング処理方法
KR102390158B1 (ko) * 2017-06-08 2022-04-25 쇼와 덴코 가부시키가이샤 에칭 방법
CN114639602B (zh) * 2020-12-15 2026-03-27 东京毅力科创株式会社 蚀刻方法和蚀刻装置

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JPS5341076A (en) * 1976-09-27 1978-04-14 Toshiba Corp Process for treating bulb wastes containing mercury
JPS55143560A (en) * 1979-04-26 1980-11-08 Mitsubishi Electric Corp Manufacture of photomask
JPS56158452A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Formation of pattern of electrode and wiring for semiconductor device
JPS57190320A (en) * 1981-05-20 1982-11-22 Toshiba Corp Dry etching method
JPS604270B2 (ja) * 1981-07-24 1985-02-02 三菱電機株式会社 クロム系膜のドライエツチング法
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JPS6077429A (ja) * 1983-10-04 1985-05-02 Asahi Glass Co Ltd ドライエツチング方法
JPH07105378B2 (ja) * 1984-08-24 1995-11-13 富士通株式会社 クロム系膜のドライエツチング方法
US4654112A (en) * 1984-09-26 1987-03-31 Texas Instruments Incorporated Oxide etch
US4582581A (en) * 1985-05-09 1986-04-15 Allied Corporation Boron trifluoride system for plasma etching of silicon dioxide
JPH0722152B2 (ja) * 1985-05-10 1995-03-08 ソニー株式会社 ドライエツチング方法
US4668338A (en) * 1985-12-30 1987-05-26 Applied Materials, Inc. Magnetron-enhanced plasma etching process
JPH0797575B2 (ja) * 1986-02-06 1995-10-18 沖電気工業株式会社 プラズマエツチング方法
US4786361A (en) * 1986-03-05 1988-11-22 Kabushiki Kaisha Toshiba Dry etching process
US4793897A (en) * 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US4844773A (en) * 1987-07-16 1989-07-04 Texas Instruments Incorporated Process for etching silicon nitride film
JPH0618182B2 (ja) * 1987-08-05 1994-03-09 松下電器産業株式会社 ドライエッチング装置
JP2640828B2 (ja) * 1988-06-28 1997-08-13 富士通株式会社 半導体基板表面の自然酸化膜の除去方法

Also Published As

Publication number Publication date
JP3390814B2 (ja) 2003-03-31
DE69121047T2 (de) 1997-01-16
JPH05247673A (ja) 1993-09-24
EP0482519B1 (en) 1996-07-24
KR920008866A (ko) 1992-05-28
US5302236A (en) 1994-04-12
KR910010516A (ko) 1991-06-29
DE69121047D1 (de) 1996-08-29
EP0482519A1 (en) 1992-04-29
KR100227772B1 (ko) 1999-11-01

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