KR920008866A - 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법 - Google Patents

산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법 Download PDF

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KR920008866A
KR920008866A KR1019910018444A KR910018444A KR920008866A KR 920008866 A KR920008866 A KR 920008866A KR 1019910018444 A KR1019910018444 A KR 1019910018444A KR 910018444 A KR910018444 A KR 910018444A KR 920008866 A KR920008866 A KR 920008866A
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South Korea
Prior art keywords
etching
nitride
oxide
gas
gas containing
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KR1019910018444A
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KR100227772B1 (ko
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요시후미 다하라
요시히사 히라노
이사히로 하세가와
게이지 호리오까
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이노우에 아끼라
도꾜 일렉트론 리미티드
아오이 죠이찌
가부시끼가이샤 도시바
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Publication of KR920008866A publication Critical patent/KR920008866A/ko
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Publication of KR100227772B1 publication Critical patent/KR100227772B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Static Random-Access Memory (AREA)

Abstract

내용 없음

Description

산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 에칭방법을 실시하기 위해 이용되는 드라이 에칭장치의 1실시예를 나타내는 개략 구성도.

Claims (10)

  1. 처리용기내에 산화부분 또는 질화부분을 함유하는 피처리체를 장입하는 공정과, 처리용기내에서 할로겐원소를 함유하는 가스의 플라즈마에 의해 피처리체의 산화막 또는 질화막을 에칭하는 공정을 구비하고, 상기 플라즈마의 분위기에 산화수 4미만의 탄소(C)와 산소(O)를 함유하는 가스를 존재시키는 것을 특징으로 하는 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법.
  2. 제1항에 있어서, 상기 산화수 4미만의 탄소(C)와 산소(O)를 함유하는 가스는 일산화탄소(CO)가스를 함유하고 있는 것을 특징으로 하는 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법.
  3. 제1항에 있어서, 상기 산화수 4미만의 탄소(O)와 산소(O)를 함유하는 가스는 COOH, HCHO, CH3COOH, 및 CH3OH로 이루어지는 무리에서 선택되는 적어도 1종류를 함유하고 있는 것을 특징으로 하는 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법.
  4. 제1항에 있어서, 상기 할로겐 원소를 함유하는 가스는 플루오르 카본 가스인 것을 특징으로 하는 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법.
  5. 제4항에 있어서, 상기 할로겐 원소를 함유하는 가스는 CHF3인 것을 특징으로 하는 산화물 부분 또는 질화물 부분을 함유하는 피체리체의 에칭방법.
  6. 제5항에 있어서, 상기 산화수 4미만의 탄소(C)와 산소(O)를 함유하는 가스는 일산화탄소(CO)가스를 함유하고 있을 것을 특징으로 하는 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법.
  7. 제6항에 있어서, 상기 일산화탄소(CO)가스의 공급량은 CHF3의 공급량이상인 것을 특징으로 하는 산화물부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법.
  8. 제1항에 있어서, 상기 피처리체는 반도체 기판과, 그위에 형성된 산화막 또는 질화막을 가지는 것을 특징으로 하는 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법.
  9. 제1항에 있어서, 상기 피처리체는 산화물 또는 질화물의 기판과, 그위에 형성된 반도체막을 가지는 것을 특징으로 하는 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법.
  10. 제1항에 있어서, 상기 에칭 공정은 마그네트론 플라즈마 에칭장치에 의해 행해지는 것을 특징으로 하는 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910018444A 1990-10-19 1991-10-18 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법 KR100227772B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP28315590 1990-10-19
JP90-283155 1990-10-19
JP90-300361 1990-11-05
JP30036190 1990-11-05

Publications (2)

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KR920008866A true KR920008866A (ko) 1992-05-28
KR100227772B1 KR100227772B1 (ko) 1999-11-01

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KR1019900018444A KR910010516A (ko) 1989-11-15 1990-11-14 반도체 메모리장치
KR1019910018444A KR100227772B1 (ko) 1990-10-19 1991-10-18 산화물 부분 또는 질화물 부분을 함유하는 피처리체의 에칭방법

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US (1) US5302236A (ko)
EP (1) EP0482519B1 (ko)
JP (1) JP3390814B2 (ko)
KR (2) KR910010516A (ko)
DE (1) DE69121047T2 (ko)
TW (1) TW219405B (ko)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
JP2787646B2 (ja) 1992-11-27 1998-08-20 三菱電機株式会社 半導体装置の製造方法
DE4315435C2 (de) * 1993-05-08 1995-03-09 Itt Ind Gmbh Deutsche Verfahren zum selektiven Ätzen von auf einem Halbleitersubstrat angeordneten Isolier- und Pufferschichten
JP2720763B2 (ja) * 1993-09-17 1998-03-04 日本電気株式会社 半導体装置の製造方法
US5399237A (en) * 1994-01-27 1995-03-21 Applied Materials, Inc. Etching titanium nitride using carbon-fluoride and carbon-oxide gas
JPH08153708A (ja) * 1994-11-29 1996-06-11 Nec Corp エッチング装置およびエッチング方法
JP3778299B2 (ja) * 1995-02-07 2006-05-24 東京エレクトロン株式会社 プラズマエッチング方法
US5702567A (en) * 1995-06-01 1997-12-30 Kabushiki Kaisha Toshiba Plurality of photolithographic alignment marks with shape, size and spacing based on circuit pattern features
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US5814563A (en) * 1996-04-29 1998-09-29 Applied Materials, Inc. Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas
US5928967A (en) * 1996-06-10 1999-07-27 International Business Machines Corporation Selective oxide-to-nitride etch process using C4 F8 /CO/Ar
ATE251341T1 (de) * 1996-08-01 2003-10-15 Surface Technology Systems Plc Verfahren zur ätzung von substraten
GB9616225D0 (en) 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
KR19980064466A (ko) * 1996-12-23 1998-10-07 윌리엄비.켐플러 이산화탄소로 실리콘 산화물을 에칭하는 공정
US5882535A (en) * 1997-02-04 1999-03-16 Micron Technology, Inc. Method for forming a hole in a semiconductor device
KR100458085B1 (ko) * 1997-06-30 2005-02-23 주식회사 하이닉스반도체 반도체장치제조방법
US6277720B1 (en) * 1997-06-30 2001-08-21 Texas Instruments Incorporated Silicon nitride dopant diffusion barrier in integrated circuits
US6187685B1 (en) 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
US5866485A (en) * 1997-09-29 1999-02-02 Siemens Aktiengesellschaft Techniques for etching a silicon dioxide-containing layer
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
JPH11354499A (ja) * 1998-04-07 1999-12-24 Oki Electric Ind Co Ltd コンタクトホール等の形成方法
US6455232B1 (en) 1998-04-14 2002-09-24 Applied Materials, Inc. Method of reducing stop layer loss in a photoresist stripping process using a fluorine scavenger
JP2991192B1 (ja) 1998-07-23 1999-12-20 日本電気株式会社 プラズマ処理方法及びプラズマ処理装置
US6417013B1 (en) 1999-01-29 2002-07-09 Plasma-Therm, Inc. Morphed processing of semiconductor devices
JP3241020B2 (ja) 1999-03-26 2001-12-25 日本電気株式会社 半導体装置の製造方法
US6255179B1 (en) 1999-08-04 2001-07-03 International Business Machines Corporation Plasma etch pre-silicide clean
US20030010354A1 (en) * 2000-03-27 2003-01-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber
US6500356B2 (en) * 2000-03-27 2002-12-31 Applied Materials, Inc. Selectively etching silicon using fluorine without plasma
US6436841B1 (en) 2001-09-10 2002-08-20 Taiwan Semiconductor Manufacturing Company Selectivity oxide-to-oxynitride etch process using a fluorine containing gas, an inert gas and a weak oxidant
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
JP4495471B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US20060105114A1 (en) * 2004-11-16 2006-05-18 White John M Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
US7645710B2 (en) * 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7678710B2 (en) * 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US20080124937A1 (en) * 2006-08-16 2008-05-29 Songlin Xu Selective etching method and apparatus
TWI435376B (zh) * 2006-09-26 2014-04-21 Applied Materials Inc 用於缺陷鈍化之高ｋ閘極堆疊的氟電漿處理
JP2010245101A (ja) * 2009-04-01 2010-10-28 Hitachi High-Technologies Corp ドライエッチング方法
JP6604911B2 (ja) * 2016-06-23 2019-11-13 東京エレクトロン株式会社 エッチング処理方法
JP7261159B2 (ja) * 2017-06-08 2023-04-19 株式会社レゾナック エッチング方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5341076A (en) * 1976-09-27 1978-04-14 Toshiba Corp Process for treating bulb wastes containing mercury
JPS55143560A (en) * 1979-04-26 1980-11-08 Mitsubishi Electric Corp Manufacture of photomask
JPS56158452A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Formation of pattern of electrode and wiring for semiconductor device
JPS57190320A (en) * 1981-05-20 1982-11-22 Toshiba Corp Dry etching method
JPS604270B2 (ja) * 1981-07-24 1985-02-02 三菱電機株式会社 クロム系膜のドライエツチング法
US4376672A (en) * 1981-10-26 1983-03-15 Applied Materials, Inc. Materials and methods for plasma etching of oxides and nitrides of silicon
JPS6077429A (ja) * 1983-10-04 1985-05-02 Asahi Glass Co Ltd ドライエツチング方法
JPH07105378B2 (ja) * 1984-08-24 1995-11-13 富士通株式会社 クロム系膜のドライエツチング方法
US4654112A (en) * 1984-09-26 1987-03-31 Texas Instruments Incorporated Oxide etch
US4582581A (en) * 1985-05-09 1986-04-15 Allied Corporation Boron trifluoride system for plasma etching of silicon dioxide
JPH0722152B2 (ja) * 1985-05-10 1995-03-08 ソニー株式会社 ドライエツチング方法
US4668338A (en) * 1985-12-30 1987-05-26 Applied Materials, Inc. Magnetron-enhanced plasma etching process
JPH0797575B2 (ja) * 1986-02-06 1995-10-18 沖電気工業株式会社 プラズマエツチング方法
US4786361A (en) * 1986-03-05 1988-11-22 Kabushiki Kaisha Toshiba Dry etching process
US4793897A (en) * 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US4844773A (en) * 1987-07-16 1989-07-04 Texas Instruments Incorporated Process for etching silicon nitride film
JPH0618182B2 (ja) * 1987-08-05 1994-03-09 松下電器産業株式会社 ドライエッチング装置
JP2640828B2 (ja) * 1988-06-28 1997-08-13 富士通株式会社 半導体基板表面の自然酸化膜の除去方法

Also Published As

Publication number Publication date
KR910010516A (ko) 1991-06-29
DE69121047D1 (de) 1996-08-29
EP0482519A1 (en) 1992-04-29
DE69121047T2 (de) 1997-01-16
US5302236A (en) 1994-04-12
TW219405B (ko) 1994-01-21
JPH05247673A (ja) 1993-09-24
KR100227772B1 (ko) 1999-11-01
JP3390814B2 (ja) 2003-03-31
EP0482519B1 (en) 1996-07-24

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