ES2110708T3 - Procedimiento para crear un deposito de oxido de silicio sobre un sustrato solido en desplazamiento. - Google Patents

Procedimiento para crear un deposito de oxido de silicio sobre un sustrato solido en desplazamiento.

Info

Publication number
ES2110708T3
ES2110708T3 ES94400916T ES94400916T ES2110708T3 ES 2110708 T3 ES2110708 T3 ES 2110708T3 ES 94400916 T ES94400916 T ES 94400916T ES 94400916 T ES94400916 T ES 94400916T ES 2110708 T3 ES2110708 T3 ES 2110708T3
Authority
ES
Spain
Prior art keywords
creating
procedure
silicon oxide
solid substrate
oxide deposit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES94400916T
Other languages
English (en)
Inventor
Frank Slootman
Pascal Bouard
Francois Coeuret
Dominique Jouvaud
Eckhard Prinz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Softal Elektronik GmbH
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
Softal Elektronik GmbH
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Softal Elektronik GmbH, Air Liquide SA, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical Softal Elektronik GmbH
Application granted granted Critical
Publication of ES2110708T3 publication Critical patent/ES2110708T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S422/00—Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing
    • Y10S422/907—Corona or glow discharge means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31507—Of polycarbonate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31935—Ester, halide or nitrile of addition polymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)

Abstract

SEGUN EL PROCESO SE SOMETE EL SUSTRATO (2) A UNA DESCARGA ELECTRICA DE BARRERA DIELECTRICA, POR EJEMPLO UNA DESCARGA EN PRESENCIA DE UNA ATMOSFERA QUE CONTIENE SILANO, GAS OXIDANTE NO N2O, CO2 U O2, PARTICULARMENTE Y UN GAS PORTADOR NEUTRO TAL COMO NITROGENO O ARGON. SE MANTIENE ALREDEDOR DEL ELECTRODO (6) UTILIZADO PARA LA DESCARGA ELECTRICA UNA ATMOSFERA CONTROLADA QUE CONTIENE EL SILANO Y EL GAS OXIDANTE CERCA DEL ELECTRODO, EVITANDO QUE EL PROCESO SEA PERTURBADO POR EL AIRE ATMOSFERICO ARRASTRADO, POR EJEMPLO POR EL SUSTRATO (2) DE PASO (3).
ES94400916T 1993-04-29 1994-04-28 Procedimiento para crear un deposito de oxido de silicio sobre un sustrato solido en desplazamiento. Expired - Lifetime ES2110708T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9305063A FR2704558B1 (fr) 1993-04-29 1993-04-29 Procede et dispositif pour creer un depot d'oxyde de silicium sur un substrat solide en defilement.

Publications (1)

Publication Number Publication Date
ES2110708T3 true ES2110708T3 (es) 1998-02-16

Family

ID=9446566

Family Applications (1)

Application Number Title Priority Date Filing Date
ES94400916T Expired - Lifetime ES2110708T3 (es) 1993-04-29 1994-04-28 Procedimiento para crear un deposito de oxido de silicio sobre un sustrato solido en desplazamiento.

Country Status (12)

Country Link
US (3) US5576076A (es)
EP (1) EP0622474B1 (es)
JP (1) JP3405808B2 (es)
KR (1) KR100298380B1 (es)
AT (1) ATE161294T1 (es)
CA (1) CA2122505C (es)
DE (1) DE69407335T2 (es)
DK (1) DK0622474T3 (es)
ES (1) ES2110708T3 (es)
FR (1) FR2704558B1 (es)
GR (1) GR3026030T3 (es)
TW (1) TW267237B (es)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19505449C2 (de) * 1995-02-17 1997-04-30 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Schichtsystems auf Substraten und das mit diesem Verfahren hergestellte Schichtsystem
DE19523444A1 (de) * 1995-06-28 1997-01-02 Antec Angewandte Neue Technolo Verfahren zur Beschichtung von Kunststoffen oder ähnlichen weichen Werkstoffen
DE19538176A1 (de) * 1995-10-13 1997-04-17 Arcotec Oberflaechentech Gmbh Vorrichtung zur Behandlung flächiger Substrate mit einer Koronastation
US5900317A (en) * 1996-09-13 1999-05-04 Minnesota Mining & Manufacturing Company Flame-treating process
FR2758318B1 (fr) * 1997-01-15 1999-02-05 Air Liquide Procede et installation d'elaboration d'un melange gazeux comportant un gaz porteur, un gaz oxydant et un silane
NL1005418C2 (nl) * 1997-03-03 1998-09-07 Kema Nv Werkwijze voor het behandelen van een basismateriaal ter verkrijging van specifieke eigenschappen.
US6106659A (en) * 1997-07-14 2000-08-22 The University Of Tennessee Research Corporation Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials
US6083355A (en) * 1997-07-14 2000-07-04 The University Of Tennessee Research Corporation Electrodes for plasma treater systems
DE19731562B4 (de) * 1997-07-23 2008-11-13 Softal Electronic Erik Blumenfeld Gmbh & Co. Verfahren und Vorrichtung zur Behandlung der inneren Oberfläche von porösen bewegten Bahnen durch elektrische Entladungen im Bereich von Atmosphärendruck
FR2770425B1 (fr) 1997-11-05 1999-12-17 Air Liquide Procede et dispositif pour le traitement de surface d'un substrat par decharge electrique entre deux electrodes dans un melange gazeux
US6045864A (en) 1997-12-01 2000-04-04 3M Innovative Properties Company Vapor coating method
US6399522B1 (en) 1998-05-11 2002-06-04 Taiwan Semiconductor Manufacturing Company PE-silane oxide particle performance improvement
EP0978584B1 (en) * 1998-08-06 2009-07-29 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Fibrous structure and absorbent article including such a fibrous structure
US6054018A (en) * 1998-08-28 2000-04-25 Wisconsin Alumni Research Foundation Outside chamber sealing roller system for surface treatment gas reactors
FR2782837B1 (fr) * 1998-08-28 2000-09-29 Air Liquide Procede et dispositif de traitement de surface par plasma a pression atmospherique
US6082292A (en) * 1999-01-05 2000-07-04 Wisconsin Alumni Research Foundation Sealing roller system for surface treatment gas reactors
US6426125B1 (en) * 1999-03-17 2002-07-30 General Electric Company Multilayer article and method of making by ARC plasma deposition
AUPQ544900A0 (en) * 2000-02-04 2000-02-24 Commonwealth Scientific And Industrial Research Organisation Treatment of cellulosic material
WO2001057306A1 (en) * 2000-02-04 2001-08-09 Sca Hygiene Products Ab Fibrous structure and absorbent article comprising said fibrous structure
EP1125972A1 (fr) 2000-02-11 2001-08-22 L'air Liquide Société Anonyme pour l'étude et l'exploitation des procédés Georges Claude Procédé de traitement de surface de subtrats polymères
EP1124008A1 (en) * 2000-02-11 2001-08-16 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for treating cellulosic fibres
DE10011276A1 (de) 2000-03-08 2001-09-13 Wolff Walsrode Ag Verwendung eines indirrekten atomosphärischen Plasmatrons zur Oberflächenbehandlung oder Beschichtung bahnförmiger Werkstoffe sowie ein Verfahren zur Behandlung oder Beschichtung bahnförmiger Werkstoffe
KR20010088089A (ko) * 2000-03-10 2001-09-26 구자홍 플라즈마 중합처리 시스템의 친수성 향상 방법
FR2806324B1 (fr) * 2000-03-15 2002-09-27 Air Liquide Procede et dispositif de mise en oeuvre d'une reaction chimique et procede de traitement de surface utilisant de tels procede et dispositif
FR2816726B1 (fr) * 2000-11-16 2006-06-23 Air Liquide Installation dans laquelle est realisee une operation necessitant un controle de l'atmosphere a l'interieur d'une enceinte
EP1472387B1 (en) * 2002-02-05 2008-07-23 Dow Global Technologies Inc. Corona-generated chemical vapor deposition on a substrate
DE10254427B4 (de) * 2002-11-21 2005-03-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage und Verfahren zur Beschichtung
FR2855322B1 (fr) 2003-05-21 2005-07-01 Air Liquide Dispositif de traitement de surface par zone d'un article
CN100450647C (zh) * 2003-09-09 2009-01-14 陶氏环球技术公司 辉光放电产生的化学气相沉积
WO2006036461A1 (en) * 2004-09-27 2006-04-06 Dow Global Technologies Inc. Multilayer coatings by plasma enhanced chemical vapor deposition
RU2007119783A (ru) * 2004-10-29 2008-12-10 Дау Глобал Текнолоджиз Инк. (Us) Способ плазменно-химического осаждения из газовой фазы с улучшенной скоростью осаждения
MX2007005123A (es) * 2004-10-29 2007-06-25 Dow Global Technologies Inc Revestimientos resistentes a la abrasion a traves de deposicion de vapor quimica mejorada de plasma.
WO2007024134A1 (en) * 2005-08-26 2007-03-01 Fujifilm Manufacturing Europe B.V. Method and arrangement for generating and controlling a discharge plasma
WO2007106076A2 (en) * 2006-03-03 2007-09-20 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
JP2009538989A (ja) * 2006-05-30 2009-11-12 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． パルス化大気圧グロー放電を使用する堆積の方法及び装置
JP5543203B2 (ja) * 2006-06-16 2014-07-09 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置
TW200831751A (en) * 2007-01-19 2008-08-01 Xxentria Technology Materials Co Ltd Method for manufacturing architecture board having protection layer
FR2911610B1 (fr) * 2007-01-24 2012-09-21 Air Liquide Procede de traitement de surface de substrats polymeres, substrats ainsi obtenus et leur utilisation pour la realisation de materiaux multicouches.
WO2008100139A1 (en) * 2007-02-13 2008-08-21 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
US8029105B2 (en) * 2007-10-17 2011-10-04 Eastman Kodak Company Ambient plasma treatment of printer components
GB0723700D0 (en) 2007-12-04 2008-01-16 Gmca Pty Ltd Power tool cutting apparatus
JP5597551B2 (ja) * 2008-02-01 2014-10-01 フジフィルム マニュファクチュアリング ヨーロッパ ビー．ヴィ． 移動基材のプラズマ表面処理の装置、方法および当該方法の使用
EP2241165B1 (en) * 2008-02-08 2011-08-31 Fujifilm Manufacturing Europe B.V. Method for manufacturing a multi_layer stack structure with improved wvtr barrier property
WO2009104957A1 (en) 2008-02-21 2009-08-27 Fujifilm Manufacturing Europe B.V. Plasma treatment apparatus and method for treatment of a substrate with atmospheric pressure glow discharge electrode configuration
EP2123793A1 (en) * 2008-05-20 2009-11-25 Helianthos B.V. Vapour deposition process
US20100062176A1 (en) * 2008-09-09 2010-03-11 Sigma Laboratories Of Arizona, Llc Boundary layer disruptive preconditioning in atmospheric-plasma process
EP2198718A1 (de) 2008-12-19 2010-06-23 CaseTech GmbH Plasmabehandelte Schlauchfolien
WO2010092384A1 (en) 2009-02-12 2010-08-19 Fujifilm Manufacturing Europe Bv Two layer barrier on polymeric substrate
CN103189543A (zh) * 2010-11-24 2013-07-03 思诺斯技术公司 用于在大衬底上执行原子层沉积的具有多个分段的延伸反应器组件
WO2013110963A1 (fr) 2012-01-24 2013-08-01 Arcelormittal Investigacion Y Desarrollo Sl Appareil et procédé de revêtement d'un substrat métallique en défilement
JP6421962B1 (ja) * 2017-08-09 2018-11-14 春日電機株式会社 表面改質装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
US3824398A (en) * 1971-08-12 1974-07-16 Celanese Corp Method for plasma treatment of substrates
JPS57192032A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Forming method for insulating film
JPS6031938B2 (ja) * 1982-01-26 1985-07-25 株式会社山東鉄工所 低温プラズマ処理装置
JPS58181865A (ja) * 1982-04-20 1983-10-24 Citizen Watch Co Ltd プラズマｃｖｄ装置
US5013584A (en) * 1987-11-20 1991-05-07 Hughes Aircraft Company Method of reducing the permeability of plastic optical articles
DE3827629A1 (de) * 1988-08-16 1990-03-15 Hoechst Ag Verfahren und vorrichtung zur oberflaechenvorbehandlung von ein- oder mehrschichtigem formmaterial mittels einer elektrischen koronaentladung
EP0527859B1 (en) * 1990-05-10 1995-07-19 Eastman Kodak Company Apparatus for-plasma treatment of continuous material
US5089442A (en) * 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
US5040046A (en) * 1990-10-09 1991-08-13 Micron Technology, Inc. Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby
FR2670506B1 (fr) * 1990-12-17 1993-02-19 Air Liquide Procede de depot d'une couche d'oxyde de silicium liee a un substrat en polyolefine.
DE4142877A1 (de) * 1990-12-28 1992-07-02 Mitsubishi Electric Corp Cvd-verfahren und vorrichtung zu dessen durchfuehrung
DE4117332C2 (de) * 1991-05-31 1995-11-23 Ivanovskij Ni Skij Eksperiment Verfahren zur Behandlung von laufendem Substrat mit Hilfe eines elektrischen Entladungsplasmas und Vorrichtung zu dessen Durchführung
US5224441A (en) * 1991-09-27 1993-07-06 The Boc Group, Inc. Apparatus for rapid plasma treatments and method
JPH05275345A (ja) * 1992-03-30 1993-10-22 Nippon Sheet Glass Co Ltd プラズマｃｖｄ方法およびその装置
US5462779A (en) * 1992-10-02 1995-10-31 Consorzio Ce.Te.V. Centro Tecnologie Del Vuoto Thin film multilayer structure as permeation barrier on plastic film
KR960000190B1 (ko) * 1992-11-09 1996-01-03 엘지전자주식회사 반도체 제조방법 및 그 장치
US5670224A (en) * 1992-11-13 1997-09-23 Energy Conversion Devices, Inc. Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates

Also Published As

Publication number Publication date
JPH07126006A (ja) 1995-05-16
ATE161294T1 (de) 1998-01-15
EP0622474A1 (fr) 1994-11-02
JP3405808B2 (ja) 2003-05-12
TW267237B (es) 1996-01-01
KR100298380B1 (ko) 2001-10-24
CA2122505A1 (fr) 1994-10-30
US5952108A (en) 1999-09-14
GR3026030T3 (en) 1998-04-30
EP0622474B1 (fr) 1997-12-17
FR2704558A1 (fr) 1994-11-04
US5576076A (en) 1996-11-19
US5753193A (en) 1998-05-19
CA2122505C (fr) 2006-01-03
DE69407335D1 (de) 1998-01-29
DK0622474T3 (da) 1998-01-19
FR2704558B1 (fr) 1995-06-23
DE69407335T2 (de) 1998-07-09

Similar Documents

Publication Publication Date Title
ES2110708T3 (es) Procedimiento para crear un deposito de oxido de silicio sobre un sustrato solido en desplazamiento.
ES2081624T3 (es) Procedimiento para la descomposicion catalitica de monoxido de nitrogeno por medio de un catalizador substrato que contiene plata.
EP0847079A3 (en) Method of manufacturing an MIS electrode
UA12650A (uk) Спосіб hаhесеhhя плівок hа осhові оксиду кремhію
EP0226130A3 (en) Method of producing silicon diffusion coatings on metal articles
EP0874391A3 (en) Process for depositing a Halogen-doped SiO2 layer
TWI265648B (en) Doped organic semiconductor material and process for manufacturing the same
EP0253059A3 (en) Process for suppressing the rise of the buried layer of a semiconductor device
KR880011898A (ko) 박막형성 방법과 그 장치
GB2322235A (en) Metals removal process
ES2020479A6 (es) Metodo y aparato para formar piroliticamente un revestimiento de oxido sobre un sustrato de vidrio caliente.
SE9201827D0 (sv) Barriaerfilm samt foerfarande foer framstaellning daerav
ES8704431A1 (es) Procedimiento y dispositivo pra el revestimiento de una capa fina de oxido metalico que resulta de la pirolisis de compuesto de polvo
SE9602975L (sv) Anordning och förfarande för reducering av kväveoxidföreningar
AU572004B2 (en) Catalyst of cobalt on silica treated with silicon compound
DE69114296D1 (de) Behandlung von oxidhaltigen stäuben.
GB9816720D0 (en) Process for coating glass
MY134851A (en) Process for ashing organic materials from substrates
ATE125780T1 (de) Verfahren zur herstellung von fullerenen und heterofullerenen.
CA2199099A1 (en) Apparatus and Method for Forming Heat Treating Atmospheres
JPS6420669A (en) Field-effect semiconductor device
Bishop Decreasing the Static Electrification of Nylon
Tsuge et al. A Consideration on Laser Machining Mechanism of Silicon Nitride and Silicon Carbide
PL216964A1 (es)
Uchikawa et al. DETERMINATION OF CADMIUM IN CERAMIC MATERIALS AND CERAMIC PRODUCTS BY INDUCTIVELY COUPLED PLASMA ATOMIC-EMISSION SPECTROSCOPY

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 622474

Country of ref document: ES