MY134851A - Process for ashing organic materials from substrates - Google Patents

Process for ashing organic materials from substrates

Info

Publication number
MY134851A
MY134851A MYPI99000277A MYPI9900277A MY134851A MY 134851 A MY134851 A MY 134851A MY PI99000277 A MYPI99000277 A MY PI99000277A MY PI9900277 A MYPI9900277 A MY PI9900277A MY 134851 A MY134851 A MY 134851A
Authority
MY
Malaysia
Prior art keywords
gas
sulfur trioxide
supplemental
substrates
organic materials
Prior art date
Application number
MYPI99000277A
Inventor
Eric O Levenson
Ahmad Nmi Waleh
Original Assignee
Anon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anon Inc filed Critical Anon Inc
Publication of MY134851A publication Critical patent/MY134851A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

ASHING OF AN ORGANIC FILM FROM A SUBSTRATE IS CARRIED OUT BY PROVIDING A PLASMA.COMPRISING A GAS OR GAS MIXTURE SELECTED FROM THE FOLLOWING GROUPS: (A) SULFUR TRIOXIDE ALONE; (2) SULFUR TRIOXIDE PLUS ONE SUPPLEMENTAL GAS; AND (3) SULFUR TRIOXIDE PLUS AT LEAST TWO SUPPLEMENTAL GASES. ANY OF THE FOLLOWING GASES MAY BE EMPLOYED AS THE SUPPLEMENTAL GAS: WATER VAPOR, OZONE, HYDROGEN, NITROGEN, NITROGEN OXIDES, OR A HALOGENIDE SUCH AS TETRAFLUOROMETHANE, CHLORINE, NITROGEN TRIFLUORIDE. HEXAFLUOROETHANE, OR METHYLTRIFLUORIDE.
MYPI99000277A 1998-01-28 1999-01-26 Process for ashing organic materials from substrates MY134851A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1469598A 1998-01-28 1998-01-28

Publications (1)

Publication Number Publication Date
MY134851A true MY134851A (en) 2007-12-31

Family

ID=21767120

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI99000277A MY134851A (en) 1998-01-28 1999-01-26 Process for ashing organic materials from substrates

Country Status (9)

Country Link
EP (1) EP1074043A4 (en)
JP (1) JP3358808B2 (en)
KR (1) KR100377711B1 (en)
CN (1) CN1154159C (en)
CA (1) CA2319018C (en)
IL (1) IL137513A (en)
MY (1) MY134851A (en)
TW (1) TWI239994B (en)
WO (1) WO1999039382A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6231775B1 (en) * 1998-01-28 2001-05-15 Anon, Inc. Process for ashing organic materials from substrates
US20050136681A1 (en) * 2003-12-23 2005-06-23 Tokyo Electron Limited Method and apparatus for removing photoresist from a substrate
KR100559947B1 (en) * 2004-08-18 2006-03-13 동부아남반도체 주식회사 Method for post treatment of metal wiring of semiconductor device
US7387968B2 (en) 2005-11-08 2008-06-17 Tokyo Electron Limited Batch photoresist dry strip and ash system and process
US7381651B2 (en) * 2006-03-22 2008-06-03 Axcelis Technologies, Inc. Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
US8043434B2 (en) * 2008-10-23 2011-10-25 Lam Research Corporation Method and apparatus for removing photoresist
CN104599962A (en) * 2014-12-29 2015-05-06 上海华虹宏力半导体制造有限公司 Thick aluminum etching polymer removing method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163826A (en) * 1983-03-08 1984-09-14 Toshiba Corp Dry etching method
EP0368732B1 (en) * 1988-11-04 1995-06-28 Fujitsu Limited Process for forming resist mask pattern
JPH0475323A (en) * 1990-07-17 1992-03-10 Seiko Epson Corp Removal method of resist
US5037506A (en) * 1990-09-06 1991-08-06 Subhash Gupta Method of stripping layers of organic materials
FR2673763A1 (en) * 1991-03-06 1992-09-11 Centre Nat Rech Scient Method of anisotropic etching of polymers by plasma
JP3084910B2 (en) * 1992-03-18 2000-09-04 ヤマハ株式会社 Wiring formation method
JPH05304089A (en) * 1992-04-28 1993-11-16 Dainippon Screen Mfg Co Ltd Method and device of removing resist from surface of substrate
JP2572924B2 (en) * 1992-09-04 1997-01-16 醇 西脇 Surface treatment method of metal by atmospheric pressure plasma
US5550007A (en) * 1993-05-28 1996-08-27 Lucent Technologies Inc. Surface-imaging technique for lithographic processes for device fabrication
JP3391410B2 (en) * 1993-09-17 2003-03-31 富士通株式会社 How to remove resist mask
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US5763016A (en) * 1996-12-19 1998-06-09 Anon, Incorporated Method of forming patterns in organic coatings films and layers

Also Published As

Publication number Publication date
TWI239994B (en) 2005-09-21
EP1074043A4 (en) 2002-11-06
JP3358808B2 (en) 2002-12-24
CA2319018A1 (en) 1999-08-05
IL137513A0 (en) 2001-07-24
IL137513A (en) 2004-05-12
EP1074043A1 (en) 2001-02-07
CA2319018C (en) 2004-08-24
JP2002502125A (en) 2002-01-22
CN1154159C (en) 2004-06-16
WO1999039382A1 (en) 1999-08-05
KR20010040431A (en) 2001-05-15
CN1289452A (en) 2001-03-28
KR100377711B1 (en) 2003-03-26

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