TWI239994B - Process for ashing organic materials from substrates - Google Patents

Process for ashing organic materials from substrates Download PDF

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Publication number
TWI239994B
TWI239994B TW088101212A TW88101212A TWI239994B TW I239994 B TWI239994 B TW I239994B TW 088101212 A TW088101212 A TW 088101212A TW 88101212 A TW88101212 A TW 88101212A TW I239994 B TWI239994 B TW I239994B
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Taiwan
Prior art keywords
gas
ashing
plasma
sulfur trioxide
nitrogen
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TW088101212A
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Chinese (zh)
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Eric O Levenson
Ahmad Nmi Waleh
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Anon Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

Ashing of an organic film from a substrate is carried out by providing a plasma comprising a gas or a gas mixture selected from the following groups: (1) sulfur trioxide alone; (2) sulfur trioxide plus one supplemental gas; and (3) sulfur trioxide plus at least two supplemental gases. Any of the following gases may be employed as the supplemental gas: water vapor, ozone, hydrogen, nitrogen oxides, or a halogenide such as tetrafluoromethane, chlorine, nitrogen trifluoride, hexafluoroethane, or methyltrifluoride.

Description

1239994 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（1 ) 發明之背景說明 1·發明之技術領域 本發明一般而言係有關於位在各種基板上之有機材 料的移除，且特別是有關於一種在半導體、平板顯示器、 讀/寫頭及其他相關裝置之製造期間，用以移除暫時被形 成於各種基板上的有機膜及材料的灰化法。 2·相關技術之說明 光阻膜的移除係為製造半導體元件之加工過程的一 個重要部份。灰化法的用途，特別是使用一具有高氧含量 的氣體’以供移除諸如光阻及聚亞醯胺之有機膜的方法已 被知曉有一段時間。過去十年來，電漿裝置及相關加工技 藝的進步已能克服超大型積體電路（VLSI)與極大型積體電 路（ULSI)元件的難題。然而，由於在這些裝置中的特徵尺 寸及膜厚不斷地減小，製造上之挑戰亦隨著每一世代的積 體電路（1C)而不同。 由於1C幾何圖案不斷地急遽收縮，所以灰化法不斷 地面對二個問題：U)獲得更高速率的無殘留光阻移除以 及（b)降低光阻膜下之基板的損傷量。這些大抵相互衝突 的目標係藉由改變電漿介質的物理條件或灰化法的化學條 件而達成。例如，藉由產生一緻密的電漿環境，或者藉由 在電漿環境中使用或產生能更有效地與光阻反應的化學無 質，而獲得更高的加工速率。 (請先閱讀背面之注意事項本頁) 裝· 訂 基板損傷同樣地可歸因於電漿的物理及化學條件。 例如’電荷及離子撞擊效應係直接與電漿的物理條件相1239994 Printed by A7 B7, Consumer Cooperatives, Central Standards Bureau, Ministry of Economic Affairs 5. Description of the Invention (1) Background Description of the Invention 1. Technical Field of the Invention The present invention generally relates to the removal of organic materials on various substrates. In particular, it relates to an ashing method for removing organic films and materials temporarily formed on various substrates during the manufacture of semiconductors, flat panel displays, read / write heads, and other related devices. 2. Description of related technology The removal of the photoresist film is an important part of the process of manufacturing semiconductor devices. The use of the ashing method, in particular, a method using a gas having a high oxygen content for removing organic films such as photoresist and polyimide has been known for some time. Over the past decade, advances in plasma devices and related processing technologies have overcome the challenges of very large integrated circuit (VLSI) and very large integrated circuit (ULSI) components. However, due to the ever-decreasing feature sizes and film thicknesses in these devices, manufacturing challenges also vary with each generation of integrated circuits (1C). As the 1C geometric pattern continues to shrink rapidly, the ashing method continues to face two problems: U) obtaining a higher rate of residual photoresist removal and (b) reducing the amount of damage to the substrate under the photoresist film. These conflicting goals are achieved by changing the physical conditions of the plasma medium or the chemical conditions of the ashing process. For example, higher processing rates can be achieved by producing a uniform plasma environment, or by using or producing chemically inert materials that react more effectively with photoresist in a plasma environment. (Please read the caution page on the back first) Binding and binding The substrate damage can be attributed to the physical and chemical conditions of the plasma. For example, the charge and ion impact effects are directly related to the physical conditions of the plasma.

經濟部中央標準局員工消費合作社印製 1239994 A7 ________________ _ B7 五、發明説明（2 ) 關。帶有能量的離子將驅策少量的重金屬（亦即Fe、以及 Pb)及鹼金屬（亦即Na&K)原子進入至光阻層下的基板内， 該等原子通常係如同光阻膜中的雜質而存在。重金屬污染 以及特別是隨後的重金屬進入其他基板（例如矽）層的滲透 與遷移將可影響少數載體的壽命以致劣化裝置性質。當光 阻膜在接近灰化加工末期而變得更薄時，該撞擊效應會變 得更為嚴重’特別是當易受損的基板厚度被設計得更薄 時。 基板損傷亦由電漿之化學性質所造成，諸如對於光 阻下方之層的餘刻及其他有害的效應。例如，當諸如氧氣 (〇2)與四氣甲烧（CF4)之鹵素氣體混合物被用來增加電漿 灰化速率時’因氟（F)之故而會發生氧化矽（Si〇2)蝕刻。相 似地’帶有能量的氧離子會導致在旋塗式玻璃（s〇G)膜之 表層中形成水，而造成介電常數或相關的介層損傷現象之 一增加。 依不同的應用而定，這些考量係應用於諸如桶式、 下流式或平行電極結構等傳統乾式蝕刻電漿蝕刻機中，其 中以下流式灰化法為最廣泛被使用的方法。為增加加工速 率並減少離子損傷的問題，可使用具有更高電漿密度及更 低離子能量的技術。新世代的先進電漿源係藉由將電漿密 度控制與電漿中離子能量控制分離而達成這些目標，此係 藉由諸如微波或射頻功率制度中的電子環繞共振（ECR)或 誘導耦合電漿（ICP)而為之。這些或其他形式的電製技術 及電漿工具之技藝係廣為熟知並已為許多美國專利的主 -5- I紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） --— (請先閱讀背面之注意事項寫本頁) -装·Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 1239994 A7 ________________ _ B7 V. Description of Invention (2) Off. Energetic ions will drive a small amount of heavy metal (that is, Fe and Pb) and alkali metal (that is, Na & K) atoms into the substrate under the photoresist layer. These atoms are usually like those in a photoresist film. Impurities. Heavy metal contamination, and in particular subsequent penetration and migration of heavy metals into other substrate (eg, silicon) layers, can affect the life of a few carriers and degrade device properties. When the photoresist film becomes thinner near the end of the ashing process, the impact effect becomes more severe ', especially when the thickness of the vulnerable substrate is designed to be thinner. Substrate damage is also caused by the chemical nature of the plasma, such as the aftermath of layers under the photoresist and other harmful effects. For example, when a halogen gas mixture such as oxygen (02) and four-gas methylbenzene (CF4) is used to increase the plasma ashing rate ', silicon oxide (SiO2) etching occurs due to fluorine (F). Similarly, the energetic oxygen ions will cause the formation of water in the surface layer of the spin-on glass (SOG) film, which results in an increase in dielectric constant or related damage to the dielectric layer. Depending on the application, these considerations are applied to traditional dry-etching plasma etchers such as barrel, down-flow, or parallel electrode structures, among which the downstream ashing method is the most widely used method. To increase processing rates and reduce ionic damage, techniques with higher plasma density and lower ion energy can be used. The new generation of advanced plasma sources achieves these goals by separating plasma density control from ion energy control in the plasma. This is accomplished by, for example, electron surround resonance (ECR) or induced coupling electricity in microwave or RF power systems. (ICP). These or other forms of electro-technical technology and plasma tools are widely known and have been the master -5- I paper size of many US patents. The Chinese National Standard (CNS) A4 specification (210X297 mm) --- ( (Please read the notes on the back to write this page)

、1T 1239994, 1T 1239994

、發明説明（ 經濟部中央標準局員工消費合作社印製 題。 與所使用之電聚的性質與組成無關，在傳統灰化設 備中，灰化的速率與完成性以及對於基板層之任何非所欲 的蝕刻與損傷，係受光阻及基板層與電漿中所產生的活性 ^中丨生和自由基物種之間的化學反應所強烈影響。 在-典型的下流式或其他傳統式灰化機中，電漿氣體混合 物的性質係為對於“灰化溫度”亦極為敏感之灰化速率的主 要決定因素。氣體混合物的性質亦影響灰化的活化能，該 活化能係為灰化速率對灰化溫度之敏感度的量測方式。 該活化能係由阿瑞尼氏圖（Arrhenius pl〇t)的梯度而獲 得，該圖乃為以反灰化溫度之一函數來表示的灰化速率之 一線狀圖。因此，小的活化能（阿瑞尼氏圖之一低斜率）意 才曰灰化速率對灰化溫度較不敏感，且該灰化加工較為穩定 與均勻。較低的活化能亦隱含灰化溫度可被降低而不會造 成明顯灰化速率損失。此在VLSI4ULSI製造要求較低的 加工溫度並需維持可接受的灰化速率（亦即>0.5 // m/min) 之實施水平時，係特別地有用的。 對於一系列含有由一種或多種下列氧氣、氫氣、氮 氣、水蒸氣及_化物氣體所組成之氣體混合物的灰化速率 及活化能的完整說明係發表於美國專利第4,961，82〇號 中。該專利案顯示將氮氣加入至氧氣電漿並不會改變活化 能（氧氣活化能為〇.52eV)並僅些微地改善灰化速率（在16〇 °C時’由0.1變為0.2 // m/min)。然而，加入5至10〇/〇的 或水蒸氣至氧氣中時，活化能將減少至大約〇.4eV，而 氫 在 -! 1 - - : (請先閱讀背面之注思事項寫本貢) -裝·Description of the invention (Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. It has nothing to do with the nature and composition of the electropolymers used. In traditional ashing equipment, the rate and completion of ashing and any non-uniformity to the substrate layer The desired etching and damage are strongly affected by the photoresist and the chemical reaction between the substrate layer and the plasma generated by the active ^ mesozoic and free radical species. In-typical downstream or other traditional ashing machine However, the nature of the plasma gas mixture is the main determinant of the ashing rate that is also very sensitive to the "ashing temperature". The nature of the gas mixture also affects the activation energy of the ashing, which is the ashing rate versus ash Measurement method of sensitivity of the ashing temperature. The activation energy is obtained from the gradient of the Arrhenius plot, which is the ashing rate expressed as a function of the anti-ashing temperature. A linear diagram. Therefore, a small activation energy (a low slope of the Arrhenian diagram) means that the ashing rate is less sensitive to the ashing temperature, and the ashing process is more stable and uniform. Lower activation energy It is also implied that the ashing temperature can be reduced without causing significant ashing rate loss. This requires a lower processing temperature and maintains an acceptable ashing rate in VLSI4ULSI manufacturing (that is, > 0.5 // m / min) It is particularly useful at the implementation level. A complete description of the ashing rate and activation energy for a series of gas mixtures consisting of one or more of the following oxygen, hydrogen, nitrogen, water vapor and compound gases is published in US Patent No. 4,961,82. This patent shows that adding nitrogen to the oxygen plasma does not change the activation energy (oxygen activation energy is 0.52eV) and only slightly improves the ashing rate (at 16 ° C). Time 'changed from 0.1 to 0.2 // m / min). However, when 5 to 10 // or water vapor is added to oxygen, the activation energy will be reduced to about 0.4eV, and hydrogen is at-! 1-- : (Please read the notes on the back to write this tribute)

、1T _ -6- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐 1239994 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（4 ) 加入氮的狀況中，灰化速率亦將獲得類似的改善。將氮及 5至1 〇%的氫或水蒸氣同時加入氧電漿時將增加灰化速率 至一為〇·5 /zm/min之更實用的水平（在16(rc時）。 當鹵化物（例如四氟甲烷）將入氧電漿時，將可獲得大 幅改善之活化能（降至〇.leV)及灰化速率（>1·5 # m/min)。 然而，在該狀況下，CF4亦因氟反應之故而造成蝕刻諸如 氧化矽、多晶矽及鋁之基板。據報導，反應氣體混合物中 包含水蒸氣將減少為CF#所產生的損傷，此明顯地係由於 水與CF*反應而抑制鹵素作用的結果。 如上述說明所見，具有合理的高灰化速率且對於光 阻膜下方的基板無任何不良影響之令人滿意的反應氣體混 合物係不斷地被研究。此外，由於VLSI及ULSI製造的限 制愈趨嚴格，較低的灰化溫度及灰化加工穩定度（降低活 化能）將漸漸地變為對於令人滿意之反應氣體混合物的主 要要求。 本發明已成功地在非電漿光阻移除中，於低於2〇〇 c>c 的溫度下使用脫水三氧化硫（S〇3)。實驗顯示，曝置於s〇3 之為光阻所覆蓋的基板表面將留下完整的多晶矽及金屬表 面而無任何不利之效應。被曝露的矽及金屬表面亦因三氧 化硫的鈍化活化作用而被保護。因此，在電漿灰化應用方 面’ s〇3本身或是位於反應氣體混合物中似乎係為一適當 的候選物。特別是，在氧電漿之存在下，預期S03將提高 氧自由基的形成，因而明顯地改善灰化反應速率。 ^氏張尺度適用巾麵家辟（CNS) A4規格（21()><297公 一 - (請先閱讀背面之注意事項寫本頁} -裝· 訂_ 1239994 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（5 ) —~ 之概要說明 本發明之一目的係提供一種用以由基板灰化包含光 阻殘留物的有機材料的改良方法，該方法係以三氧化硫做 為反應氣體混合物的一部份。其係藉由在灰化加工中使用 一組氣體混合物中之一者而完成。這些氣體混合物包含（工） 第1組氣體，其僅包含三氧化硫氣體；（2)第2組氣體，其 包含一由三氧化硫及一輔助氣體所構成的混合物，該輔助 氣體係諸如四氟甲烷（CF4)、氣（C〗2)、三氟化氮（NF3)、六 鼠乙烧（CJ6)或二氟甲院（CHF3);以及（3)第3組氣體，其 包含一由三氧化硫及至少二種前述之輔助氣體所構成的混 合物。 如本技藝所熟知，當某該輔助氣體以適量之量且於 加工的適當時機被加入至主要的反應灰化氣體内時，將促 成有利的灰化加工特性及有機膜移除性能。該有利的特性 及性能包含（a)更高的灰化速率，（b)較低的活化能，以及（c) 在有機物移除加工期間，無底層餘刻現象。 較佳實施例之說明 使用上述二組氣體中之一者’有機光阻之剝除與電 水灰化係使用本技藝所熟知的傳統下流動式、桶式、順流 式、直接式或其他形式的電漿灰化設備而予以執行。本發 明係有關使用於灰化加工中之氣體的性質，以及其在所有 傳統灰化裝置中的應用。該下流動式、桶式、順流式、直 接式或其他形式的電漿灰化設備係為本技藝所熟知而非為 本發明的部分。 -8- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） "一一—--- (請先閱讀背面之注意事項^^寫本頁) -裝- 1239994 A7 經濟部中央標準局員工消費合作社印製 五、發明説明（ό ) ~ --- 本發明背後的基本觀念係為，在適當體積與加工條 件下的s〇3，以及為減少活化能、增加灰化加工速率、降 低灰化加工之操作溫度或者改良灰化加工之有效性或效率 所需的某種輔助氣體之選擇性加入，以氣體形式被使用作 為一反應氣體混合物，而被用以進行電漿灰化或與所有形 式的有機塗覆物、膜、層以及殘留物（包含加工硬化光阻 在内）起反應’而使該等塗覆物、膜、層以及殘留物由基 板表面被實質地移除、清除或剝除。在本發明所有的實施 例中，三氧化硫被提供於一來源容器中，三氧化硫氣體將 由此於灰化加工中以適量及適當時間被供應至加工腔室 中。在該來源容器内部，三氧化硫可為固體、液體或氣體 的混合，而固態材料可為α型、沒型、7型或此等之一混 合物。 特別地，呈塗覆物、膜、層及殘留物形式的下列有 機材料可為本發明#方法所移^:聚合及未聚合光阻、光 阻殘留物、光敏感及非光敏感有機化合物、塗料、樹醋、 夕層有機&斗勿有機金屬複合物、侧壁聚合物以及有機 方疋塗式玻璃。該光阻包含正型光阻、負型光阻、電子束光 阻、X射線光阻及離子束光阻。 該塗覆物、膜、層及殘料物可被形成於許多不同的 基板上，包含·（a)由矽、多晶矽、鍺、羾V材料及Η 材料所組成的半導體晶圓及元件，（b)氧化物，⑷氣化物， ⑷氮氧化物，⑷無機介電質，(f)金屬及金屬合金，⑷陶 瓷7L件’⑻光罩，⑴液晶及平板顯示器，⑴印刷電路板， __________ -9- 本紙張尺舰财_家縣（—）A4規格（-------、 1T _ -6- This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm 1239994 printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperative A7 B7 V. Description of the invention (4) Ashing in the state of nitrogen A similar improvement will also be achieved in the rate. Adding nitrogen and 5 to 10% hydrogen or water vapor to the oxygen plasma at the same time will increase the ashing rate to a more practical level of 0.5 / zm / min (at 16 (When at rc). When the halide (such as tetrafluoromethane) will be fed into the oxygen plasma, a greatly improved activation energy (down to 0.1V) and ashing rate (> 1 · 5 # m / min However, under this condition, CF4 also causes etching of substrates such as silicon oxide, polycrystalline silicon, and aluminum due to the fluorine reaction. It is reported that the inclusion of water vapor in the reaction gas mixture will reduce the damage caused by CF #, which is obvious The ground system is the result of suppressing the halogen effect due to the reaction between water and CF *. As can be seen from the above description, a satisfactory reaction gas mixture with a reasonably high ashing rate and no adverse effects on the substrate under the photoresist film is continuously Be studied. In addition, because VLSI and ULSI manufacturing restrictions are becoming stricter, and lower ashing temperature and ashing process stability (reducing activation energy) will gradually become the main requirements for a satisfactory reaction gas mixture. The present invention has been successfully used in In the removal of non-plasma photoresist, dehydrated sulfur trioxide (S03) is used at a temperature lower than 200c> c. Experiments show that the surface of the substrate covered by the photoresist is exposed to s03 Will leave intact polycrystalline silicon and metal surfaces without any adverse effects. The exposed silicon and metal surfaces are also protected by the passivation and activation of sulfur trioxide. Therefore, in the plasma ashing application's〇3 itself Or it seems to be a suitable candidate in the reaction gas mixture. In particular, in the presence of an oxygen plasma, S03 is expected to increase the formation of oxygen radicals, thereby significantly improving the rate of ashing reaction. Applicable Towel Nap (CNS) A4 Specification (21 () > < 297 Gongyi-(Please read the notes on the back to write this page first)-Binding and ordering _ 1239994 Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention (5) Summary of ~~ One object of the present invention is to provide an improved method for ashing organic materials containing photoresist residues from a substrate. The method uses sulfur trioxide as a part of the reaction gas mixture. . It is accomplished by using one of a group of gas mixtures in the ashing process. These gas mixtures contain (engineering) a group 1 gas, which contains only sulfur trioxide gas; (2) a group 2 gas, It contains a mixture of sulfur trioxide and an auxiliary gas, such as tetrafluoromethane (CF4), gas (C〗 2), nitrogen trifluoride (NF3), hexamethane (CJ6) Or difluoromethane (CHF3); and (3) Group 3 gas, which contains a mixture of sulfur trioxide and at least two of the aforementioned auxiliary gases. As is well known in the art, when a certain amount of the auxiliary gas is added to the main reaction ashing gas in an appropriate amount and at an appropriate timing for processing, favorable ashing processing characteristics and organic film removal performance will be promoted. The favorable characteristics and properties include (a) higher ashing rate, (b) lower activation energy, and (c) no undercut phenomenon during organic matter removal processing. Description of the preferred embodiment Using one of the above two groups of gas, the stripping of organic photoresist and electro-water ashing use the traditional down-flow type, barrel type, co-current type, direct type or other forms well known in the art. Plasma ashing equipment. The invention relates to the nature of the gas used in the ashing process and its application in all conventional ashing plants. The down-flow, barrel, downstream, direct or other form of plasma ashing equipment is well known in the art and not part of the present invention. -8- This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) " One by one ----- (Please read the precautions on the back first ^^ Write this page) -Packing-1239994 A7 Central Ministry of Economic Affairs Printed by the Standards Bureau Consumer Cooperatives V. Description of the Invention (ό) ~ --- The basic idea behind the present invention is that s03 under appropriate volume and processing conditions, and to reduce activation energy and increase ashing processing rate Optional selective addition of some auxiliary gas required to reduce the operating temperature of ashing processing or to improve the effectiveness or efficiency of ashing processing. It is used as a reaction gas mixture in the form of gas and used for plasma ashing. Or react with all forms of organic coatings, films, layers, and residues (including work-hardened photoresist), so that these coatings, films, layers, and residues are substantially removed from the substrate surface , Remove or strip. In all the embodiments of the present invention, sulfur trioxide is provided in a source container, and the sulfur trioxide gas will thus be supplied to the processing chamber in an appropriate amount and time during the ashing process. Inside the source container, the sulfur trioxide may be a mixture of solid, liquid, or gas, and the solid material may be an α-type, a non-type, a 7-type, or a mixture thereof. In particular, the following organic materials in the form of coatings, films, layers, and residues can be removed by the #method of the present invention ^: polymerized and unpolymerized photoresist, photoresist residues, light-sensitive and non-light-sensitive organic compounds, Coatings, tree vinegar, organic & Douban organic metal compounds, sidewall polymers, and organic square coated glass. The photoresist includes a positive type photoresist, a negative type photoresist, an electron beam photoresist, an X-ray photoresist, and an ion beam photoresist. The coatings, films, layers, and residues can be formed on many different substrates, including: (a) semiconductor wafers and components composed of silicon, polycrystalline silicon, germanium, hafnium V materials, and hafnium materials, ( b) oxides, plutonium oxides, plutonium oxynitrides, plutonium inorganic dielectrics, (f) metals and metal alloys, 7L ceramics, 'photomasks,' liquid crystal and flat panel displays, 'printed circuit boards, 9- This paper ruler Jiancai_Jiaxian (—) A4 Specification (-------

j — I- - —- I (請先閱讀背面之注意事項^^寫本頁) 裝. 、1Τ 經濟部中央標準局員工消費合作社印製 工j — I--—- I (please read the notes on the back ^^ write this page first).

-------批衣 (請弁閲讀背面之注意事項 -訂 :寫本頁) 1239994 五、發明説明（ (k)磁性讀/寫頭，及⑴薄膜頭。 本發月的灰化加工係可於一在室溫（大約机）至⑸ =溫度範圍内被執行。’然而，該灰化加卫最好在盡可能 低皿且盡可能維持高蝕刻速率下執行。其次，該灰化加 最好在一低於大約200°C的溫度下被執行。 1 ·第一個實施例 個實^例係為一個在習知技藝所熟知的任何傳統 下机動式、桶式、順流式、直接式或其他形式的電裝灰化 α又備中所進行的電漿灰化加卫。在此第—個實施例中，第 1組的氣體被用使以供產生電聚。特別地，該反應氣體僅 由三氧化硫所組成。三氧化硫被供應至電漿產生腔室，該 腔室起初被抽真空及排氣至一適當的真空度。在加工期間 s〇3氣體之流動速率係以一調整器來控制。微波功率被供 應至電漿產生腔室中，而於該室内由反應氣體產生電漿。 被形成為電漿的活性物質係以習知技藝所揭示的方法之一 者而流入至加工腔室，並與基板表面上的有機膜接觸。有 機膜與電漿交互作用後，該有機膜將被移除，或產生化學 變化而使得該膜易於隨後的加工的清洗或潔淨步驟中被移 除。諸如流速、微波功率等等之加工限制係與傳統習知技 藝所使用者相同，此如美國專利第4,669,689號及第 4,961，820號中所揭示者。 2·第二個實施例 本發明的另一個實施例係為在任何一個傳統的下流 動式、桶式、順流式、直接式或其他形式的灰化設備中所 -10 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）------- Approval (please read the precautions on the back-order: write this page) 1239994 V. Description of the invention ((k) Magnetic read / write head and film head. Ashing of this month The processing can be performed at a temperature ranging from room temperature (approximately) to ⑸ = temperature. 'However, the ashing guard is preferably performed at as low a dish as possible and maintaining a high etching rate as much as possible. Second, the ashing Addition is preferably performed at a temperature below about 200 ° C. 1. The first embodiment is an example of any of the traditional mobile, barrel, and co-current methods known in the art. , Direct or other forms of electric ashing α and plasma ashing in the preparation. In this first embodiment, the gas of the first group is used for generating electricity. In particular, The reaction gas consists only of sulfur trioxide. Sulfur trioxide is supplied to the plasma generation chamber, which is initially evacuated and vented to an appropriate degree of vacuum. The flow rate of s03 gas during processing It is controlled by a regulator. Microwave power is supplied to the plasma generation chamber, and the reaction is performed in the chamber. Gas generates plasma. The active material formed into the plasma flows into the processing chamber by one of the methods disclosed in the conventional art and contacts the organic film on the substrate surface. After the organic film interacts with the plasma, , The organic film will be removed, or a chemical change will be made in the cleaning or cleaning steps that make the film easy for subsequent processing. Processing restrictions such as flow rate, microwave power, etc. are the same as those used by traditional techniques Similarly, this is disclosed in U.S. Patent Nos. 4,669,689 and 4,961,820. 2. Second Embodiment Another embodiment of the present invention is a conventional down-flow type, barrel type, and co-current type. , Direct or other forms of ashing equipment-10-This paper size applies to China National Standard (CNS) A4 (210X297 mm)

In mIn m

In i · 1239994 經濟部中央標準局員工消費合作社印製 A7 B7五、發明説明（8 ) ~ 進行的電漿灰化加工。在此第二個實施例中，第2組的氣 體被使用以供產生電漿。特別地，該反應氣體係由三氧化 硫及一種輔助氣體所組成。三氧化硫及該輔助氣體被供應 至電漿產生腔室，該腔室起初被抽真空及排氣至一適當的 真空度。在第2組反應氣體中的三氧化硫濃度係為大約】至 95 vol%的範圍。該輔助氣體則係包含餘數量（99至$ vol%) 〇 在加工期間的各氣體流量係以一調整器來控制。微 波功率被供應至電漿產生腔室中，而於該室内由反應氣體 產生電聚。被形成為電漿的活性物質係以習知技藝所揭示 的方法之一者而流入至加工腔室内，並與基板表面上的有 機膜接觸。有機膜與電漿交互作用後，該有機膜將被移除， 或產生化學變化而使得該膜易於隨後的加工的清洗或潔淨 步驟中被移除。諸如流速、微波功率等等之加工限制係與 傳統習知技藝所使用者相同。 该輔助氣體可包含由下列物質組成的族群中所選擇 的任何氣體：水蒸氣、臭氧、氫、氮、氮氧化物，或諸如 四氟甲烷（CFO、氯（CD、三氟化氮（1^3)、六氟乙烷（C2f6) 或二氧甲烷（CHF3)之鹵化物。氮氧化物的範例包含氧化二 氮（n2o)、氧化氮（N0)、三氧化氮（N〇3)及二氧化氮（N〇2)。 3.第三個實施例 本發明的又另一個實施例係為在任何一個傳統的下 流動式、桶式、順流式、直接式或其他形式的灰化設備中 所進行的電漿灰化加工。在此第三個實施例中，第3組的 _'11 * 本紙張尺度適财關家縣（CNS ) A4規格（·χ297公董） (請先閱讀背面之注意事項寫本頁) •裝· 訂 獨『· — a·In In 1239994 A7 B7 五、發明説明（9 ) 氣體被使用以供產生電漿。特別地，該反應氣體係由三氧 化硫及至少二種辅助氣體所組成。三氧化硫及該輔助氣體 被供應至電漿產生腔室，該腔室係起初被抽真空及排氣至 一適當的真空度。在第3組反應氣體中的三氧化硫濃度係 為大約1至95 vol%的範圍。該輔助氣體則包含餘數量（99 至 5 vol%)。 在加工期間的各氣體流量係以一調整器來控制。微 波功率係被供應至電漿產生腔室中，而於該室内由反應氣 體產生電漿。被形成為電漿的活性物質係以習知技藝所揭 不的方法之一者而流入至加工腔室内，並與基板表面上的 有機膜接觸。有機膜與電漿交互作用後，該有機膜將被移 除，或產生化學變化而使得該膜易於隨後的加工的清洗或 潔淨步驟中被移除。諸如流速、微波功率等等之加工限制 係與傳統習知技藝所使用者相同。 该輔助氣體包含上述的輔助氣體中的至少二種氣 體。 在各前述的實施例中，包含光阻層等有機膜的移除 係在對於底層僅有微量或無損傷的情況下為之。 因此，使用包含有三氧化硫等反應氣體的電漿灰化 加工，而由基板表面移除有機材料的方法已被揭示於本 案對於熟習本技藝之人士易於明瞭地是，具一明顯性質 之各種變化及修飾可被做出，且所有該等變化及修飾被認 為係落於隨文所附申請專利範圍的範疇中。 -12- 本紙張尺度通用宁國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項寫本頁) -裝· 訂 經濟部中央標準局員工消費合作社印製In i · 1239994 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (8) ~ Plasma ashing process. In this second embodiment, the gas of the second group is used for generating plasma. In particular, the reaction gas system is composed of sulfur trioxide and an auxiliary gas. Sulfur trioxide and the auxiliary gas are supplied to a plasma generation chamber, which is initially evacuated and exhausted to an appropriate degree of vacuum. The sulfur trioxide concentration in the reaction gas of the second group is in the range of approximately ˜95 vol%. The auxiliary gas contains the remaining amount (99 to $ vol%). The flow rate of each gas during processing is controlled by a regulator. The microwave power is supplied to a plasma generation chamber, and electropolymerization is generated in the chamber by a reaction gas. The active material formed as a plasma is flowed into the processing chamber by one of the methods disclosed in the conventional art, and is brought into contact with the organic film on the surface of the substrate. After the organic film interacts with the plasma, the organic film will be removed, or it will be removed in a cleaning or cleaning step that causes a chemical change that makes the film easier for subsequent processing. Processing restrictions such as flow rate, microwave power, etc. are the same as those of users of conventional techniques. The auxiliary gas may include any gas selected from the group consisting of: water vapor, ozone, hydrogen, nitrogen, nitrogen oxides, or such as tetrafluoromethane (CFO, chlorine (CD, nitrogen trifluoride (1 ^ 3), halides of hexafluoroethane (C2f6) or dioxymethane (CHF3). Examples of nitrogen oxides include dinitrogen oxide (n2o), nitrogen oxide (NO), nitrogen trioxide (NO3), and Nitric oxide (No. 2) 3. Third Embodiment Another embodiment of the present invention is in any conventional down-flow, barrel, co-current, direct or other forms of ashing equipment. Plasma ashing process. In this third embodiment, the third group of _'11 * This paper size is suitable for Guancai County (CNS) A4 size (· χ297 公 董) (Please read the back first (Notes on this page) • Binding and ordering "·-a In In 1239994 A7 B7 V. Description of the invention (9) Gas is used to generate plasma. In particular, the reaction gas system consists of sulfur trioxide and Composed of at least two auxiliary gases. Sulfur trioxide and the auxiliary gas are supplied to the plasma generation chamber, the chamber Initially evacuated and evacuated to an appropriate degree of vacuum. The concentration of sulfur trioxide in the reaction gas of the third group is in the range of about 1 to 95 vol%. The auxiliary gas contains the remaining amount (99 to 5 vol% ). Each gas flow rate during processing is controlled by an adjuster. Microwave power is supplied to the plasma generation chamber, and the plasma is generated by the reaction gas in the chamber. The active material system formed as the plasma Flow into the processing chamber by one of the methods not known in the art, and contact the organic film on the substrate surface. After the organic film interacts with the plasma, the organic film will be removed or a chemical change will occur. This makes the membrane easy to remove in subsequent cleaning or cleaning steps. Processing restrictions such as flow rate, microwave power, etc. are the same as those used by conventional artisans. The auxiliary gas contains at least one of the auxiliary gases described above. Two kinds of gases. In each of the foregoing embodiments, the removal of the organic film including the photoresist layer was performed with little or no damage to the bottom layer. Therefore, sulfur oxide containing The plasma ashing process of the reaction gas, and the method of removing organic materials from the surface of the substrate have been disclosed in this case. It is easy for those skilled in the art that various changes and modifications with an obvious property can be made, and All such changes and modifications are considered to fall within the scope of the patent application attached to this document. -12- The paper size is generally Ningguo National Standard (CNS) A4 specification (210X297 mm) (Please read the note on the back first Matters written on this page)-Binding and printing Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs

Claims (1)

1239994 A81239994 A8 第881〇m2號專利申請案申請專利範圍修正本93年5月24曰 經濟部智慧財產局員工消貲合作社印¾ 1. 一種用以由一基板之一表面移除一有機材料的方法，其 包含有的步驟為： ^ (a) 由一包含有三氧化硫以及5至99體積百分比之至少 一種辅助氣體之無鹵素及無烴的反應氣體，產生電 漿’ δ亥輔助氣體係擇自於由氧、臭氧、氫、氮、氧 化氮、氦及氬等所組成的族群中；以及 (b) 允許該電漿侵蝕包含有該有機材料的該基板表面 歷時一段足以灰化該有機材料但不足以侵蝕該基 板表面的時間， 其中该反應氣體基本上係由三氧化硫及一種該輔助 氣體所構成，該三氧化硫具一濃度在大約丨至％ 容積百分比的範圍内；且該_化物係擇自於由四氟 曱烷（CF4)、氣（cl2)、三氟化氮（Nf3)、六氟乙烷（CJ6) 或二氟曱烷（CHF3)所組成的族群中；且該基板係擇 自於下列族群中：（a)由矽、多晶矽、鍺、冚_v族 材料及Π -VI族材料所構成的半導體晶圓及元件，（七) 氧化物，（C)氮化物，（d)氮氧化物，（e)無機介電質， (f)金屬及金屬合金，（g)陶瓷元件，（h)光罩，⑴液 晶及平板顯示器，⑴印刷電路板，（k)磁性讀/寫頭， 及⑴薄膜頭；以及該電漿灰化加工係在一介於室溫 至350°C之間的溫度下被執行。 2·如申請專利範圍第丨項之方法，其中該反應氣體基本上 係由三氧化硫氣體所構成。 -13- 本紙張尺度適用中國固冢標準（CNS)A4規格（210x297公发） (請先Mtt背面之注意事項 -- 丨-訂- ·· -線 1239994 A8 B8 C8 D8 申請專利範圍 3.如申請專利範圍第i項之方法，其中該反應氣體基本上 係由二氧化硫及至少二種該輔助氣體所構成，該三氧化 硫具一濃度在大約2至95容積百分比的範圍内。 4·如:請專利範圍第！項之方法，其中該氧化氮係擇自於 由乳化二氮（N2〇)、氧化氮（1^0)、三氧化氮"〇3)及二氧 化氮（N〇2)所組成的族群中。 汝申明專利範圍第1項之方法，其中該有機材料包含有 一擇自於下列族群中的物質：經聚合的及未聚合的光 阻、光阻殘留物、光敏感及非光敏感有機化合物、塗料、 樹酯、多層有機聚合物、有機金屬複合物、邊緣聚合物 及有機旋塗式玻璃。 6·如^請專利範圍第i項之方法，其中該方法係在一種 下流動式、桶式、順流式或直接式灰化設備中被執行。 經濟部智慧財產局員工消f合作社印說 -14-No. 8810m2 patent application, amendment of patent scope, May 24, 1993, printed by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by a cooperative ¾ 1. A method for removing an organic material from one surface of a substrate, The steps included are: ^ (a) A plasma-free reaction gas comprising a halogen-free and hydrocarbon-free reaction gas containing sulfur trioxide and at least one auxiliary gas in an amount of 5 to 99% by volume is selected. Oxygen, ozone, hydrogen, nitrogen, nitrogen oxide, helium, and argon; and (b) allow the plasma to attack the surface of the substrate containing the organic material for a period of time sufficient to ash the organic material but not enough Time for eroding the surface of the substrate, wherein the reaction gas is basically composed of sulfur trioxide and an auxiliary gas, and the sulfur trioxide has a concentration in a range of about 丨 to% volume percentage; and From the group consisting of tetrafluoromethane (CF4), gas (cl2), nitrogen trifluoride (Nf3), hexafluoroethane (CJ6) or difluoromethane (CHF3); and the substrate is selected From the following ethnic groups: (a) Semiconductor wafers and components composed of silicon, polycrystalline silicon, germanium, 冚 _v group materials and Π-VI group materials, (7) oxides, (C) nitrides, (d) oxynitrides, (e) inorganic Dielectrics, (f) metals and metal alloys, (g) ceramic components, (h) photomasks, ⑴LCD and flat panel displays, ⑴printed circuit boards, (k) magnetic read / write heads, and ⑴film heads; and The plasma ashing process is performed at a temperature between room temperature and 350 ° C. 2. The method according to the first item of the patent application, wherein the reaction gas is basically composed of sulfur trioxide gas. -13- This paper size is in accordance with the Chinese solid grave standard (CNS) A4 specification (210x297) (please pay attention to the back of Mtt first-丨-order-· ·-line 1239994 A8 B8 C8 D8 patent application scope 3. Such as The method of applying for the item i of the patent scope, wherein the reaction gas is basically composed of sulfur dioxide and at least two kinds of the auxiliary gas, and the sulfur trioxide has a concentration in a range of about 2 to 95 volume percent. The method of claiming scope of patent, wherein the nitrogen oxide is selected from emulsified dinitrogen (N2O), nitrogen oxide (1 ^ 0), nitrogen trioxide (" 〇3), and nitrogen dioxide (N〇2 ). The method of claim 1 of the patent scope, wherein the organic material contains a substance selected from the following groups: polymerized and unpolymerized photoresist, photoresist residues, light-sensitive and non-light-sensitive organic compounds, coatings , Resin, multilayer organic polymer, organometallic composite, edge polymer and organic spin-on glass. 6. The method according to item i of the patent application, wherein the method is performed in a down-flow, barrel, co-current or direct ashing equipment. Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, Cooperative Association said -14-
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US20050136681A1 (en) * 2003-12-23 2005-06-23 Tokyo Electron Limited Method and apparatus for removing photoresist from a substrate
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US7381651B2 (en) * 2006-03-22 2008-06-03 Axcelis Technologies, Inc. Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
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US5037506A (en) * 1990-09-06 1991-08-06 Subhash Gupta Method of stripping layers of organic materials
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JP2572924B2 (en) * 1992-09-04 1997-01-16 醇 西脇 Surface treatment method of metal by atmospheric pressure plasma
US5550007A (en) * 1993-05-28 1996-08-27 Lucent Technologies Inc. Surface-imaging technique for lithographic processes for device fabrication
JP3391410B2 (en) * 1993-09-17 2003-03-31 富士通株式会社 How to remove resist mask
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
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