IL137513A0 - Process for ashing an organic film from a substrate - Google Patents
Process for ashing an organic film from a substrateInfo
- Publication number
- IL137513A0 IL137513A0 IL13751399A IL13751399A IL137513A0 IL 137513 A0 IL137513 A0 IL 137513A0 IL 13751399 A IL13751399 A IL 13751399A IL 13751399 A IL13751399 A IL 13751399A IL 137513 A0 IL137513 A0 IL 137513A0
- Authority
- IL
- Israel
- Prior art keywords
- ashing
- substrate
- organic film
- organic
- film
- Prior art date
Links
- 238000004380 ashing Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1469598A | 1998-01-28 | 1998-01-28 | |
PCT/US1999/001560 WO1999039382A1 (en) | 1998-01-28 | 1999-01-26 | Process for ashing organic materials from substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
IL137513A0 true IL137513A0 (en) | 2001-07-24 |
IL137513A IL137513A (en) | 2004-05-12 |
Family
ID=21767120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL13751399A IL137513A (en) | 1998-01-28 | 1999-01-26 | Process for ashing an organic film from a substrate |
Country Status (9)
Country | Link |
---|---|
EP (1) | EP1074043A4 (en) |
JP (1) | JP3358808B2 (en) |
KR (1) | KR100377711B1 (en) |
CN (1) | CN1154159C (en) |
CA (1) | CA2319018C (en) |
IL (1) | IL137513A (en) |
MY (1) | MY134851A (en) |
TW (1) | TWI239994B (en) |
WO (1) | WO1999039382A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6231775B1 (en) * | 1998-01-28 | 2001-05-15 | Anon, Inc. | Process for ashing organic materials from substrates |
US20050136681A1 (en) * | 2003-12-23 | 2005-06-23 | Tokyo Electron Limited | Method and apparatus for removing photoresist from a substrate |
KR100559947B1 (en) * | 2004-08-18 | 2006-03-13 | 동부아남반도체 주식회사 | Method for post treatment of metal wiring of semiconductor device |
US7387968B2 (en) * | 2005-11-08 | 2008-06-17 | Tokyo Electron Limited | Batch photoresist dry strip and ash system and process |
US7381651B2 (en) * | 2006-03-22 | 2008-06-03 | Axcelis Technologies, Inc. | Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process |
US8043434B2 (en) * | 2008-10-23 | 2011-10-25 | Lam Research Corporation | Method and apparatus for removing photoresist |
CN104599962A (en) * | 2014-12-29 | 2015-05-06 | 上海华虹宏力半导体制造有限公司 | Thick aluminum etching polymer removing method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59163826A (en) * | 1983-03-08 | 1984-09-14 | Toshiba Corp | Dry etching method |
DE68923247T2 (en) * | 1988-11-04 | 1995-10-26 | Fujitsu Ltd | Process for producing a photoresist pattern. |
JPH0475323A (en) * | 1990-07-17 | 1992-03-10 | Seiko Epson Corp | Removal method of resist |
US5037506A (en) * | 1990-09-06 | 1991-08-06 | Subhash Gupta | Method of stripping layers of organic materials |
FR2673763A1 (en) * | 1991-03-06 | 1992-09-11 | Centre Nat Rech Scient | Method of anisotropic etching of polymers by plasma |
JP3084910B2 (en) * | 1992-03-18 | 2000-09-04 | ヤマハ株式会社 | Wiring formation method |
JPH05304089A (en) * | 1992-04-28 | 1993-11-16 | Dainippon Screen Mfg Co Ltd | Method and device of removing resist from surface of substrate |
JP2572924B2 (en) * | 1992-09-04 | 1997-01-16 | 醇 西脇 | Surface treatment method of metal by atmospheric pressure plasma |
US5550007A (en) * | 1993-05-28 | 1996-08-27 | Lucent Technologies Inc. | Surface-imaging technique for lithographic processes for device fabrication |
JP3391410B2 (en) * | 1993-09-17 | 2003-03-31 | 富士通株式会社 | How to remove resist mask |
US5824604A (en) * | 1996-01-23 | 1998-10-20 | Mattson Technology, Inc. | Hydrocarbon-enhanced dry stripping of photoresist |
US5763016A (en) * | 1996-12-19 | 1998-06-09 | Anon, Incorporated | Method of forming patterns in organic coatings films and layers |
-
1999
- 1999-01-26 EP EP99904261A patent/EP1074043A4/en not_active Ceased
- 1999-01-26 KR KR10-2000-7008217A patent/KR100377711B1/en not_active IP Right Cessation
- 1999-01-26 JP JP2000529750A patent/JP3358808B2/en not_active Expired - Fee Related
- 1999-01-26 MY MYPI99000277A patent/MY134851A/en unknown
- 1999-01-26 WO PCT/US1999/001560 patent/WO1999039382A1/en not_active Application Discontinuation
- 1999-01-26 CN CNB99802399XA patent/CN1154159C/en not_active Expired - Fee Related
- 1999-01-26 IL IL13751399A patent/IL137513A/en not_active IP Right Cessation
- 1999-01-26 CA CA002319018A patent/CA2319018C/en not_active Expired - Fee Related
- 1999-03-23 TW TW088101212A patent/TWI239994B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1154159C (en) | 2004-06-16 |
MY134851A (en) | 2007-12-31 |
CA2319018C (en) | 2004-08-24 |
IL137513A (en) | 2004-05-12 |
CA2319018A1 (en) | 1999-08-05 |
TWI239994B (en) | 2005-09-21 |
KR100377711B1 (en) | 2003-03-26 |
KR20010040431A (en) | 2001-05-15 |
EP1074043A1 (en) | 2001-02-07 |
JP2002502125A (en) | 2002-01-22 |
JP3358808B2 (en) | 2002-12-24 |
EP1074043A4 (en) | 2002-11-06 |
CN1289452A (en) | 2001-03-28 |
WO1999039382A1 (en) | 1999-08-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
MM9K | Patent not in force due to non-payment of renewal fees |