JPS5320769A - Plasma etching method of metal electrodes - Google Patents

Plasma etching method of metal electrodes

Info

Publication number
JPS5320769A
JPS5320769A JP9451176A JP9451176A JPS5320769A JP S5320769 A JPS5320769 A JP S5320769A JP 9451176 A JP9451176 A JP 9451176A JP 9451176 A JP9451176 A JP 9451176A JP S5320769 A JPS5320769 A JP S5320769A
Authority
JP
Japan
Prior art keywords
plasma etching
etching method
metal electrodes
plasma
metals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9451176A
Other languages
Japanese (ja)
Inventor
Shunichi Kai
Takashi Yasujima
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9451176A priority Critical patent/JPS5320769A/en
Publication of JPS5320769A publication Critical patent/JPS5320769A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To facilitate controlling of etching conditions and improve operation capability by using transition metals which form volatile metal carbonyl compound by reacting with CO as an electrode and causing said metals react in plasma of CO, CO2 or gas containing halogen.
COPYRIGHT: (C)1978,JPO&Japio
JP9451176A 1976-08-10 1976-08-10 Plasma etching method of metal electrodes Pending JPS5320769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9451176A JPS5320769A (en) 1976-08-10 1976-08-10 Plasma etching method of metal electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9451176A JPS5320769A (en) 1976-08-10 1976-08-10 Plasma etching method of metal electrodes

Publications (1)

Publication Number Publication Date
JPS5320769A true JPS5320769A (en) 1978-02-25

Family

ID=14112335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9451176A Pending JPS5320769A (en) 1976-08-10 1976-08-10 Plasma etching method of metal electrodes

Country Status (1)

Country Link
JP (1) JPS5320769A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145131A (en) * 1982-02-23 1983-08-29 Fujitsu Ltd Dry etching of chrome film
JPS61256638A (en) * 1985-05-03 1986-11-14 テキサス　インスツルメンツ　インコーポレイテッド Patternization of thin film wiring layer
EP0285129A2 (en) * 1987-03-31 1988-10-05 Kabushiki Kaisha Toshiba Dry etching method
US5601948A (en) * 1995-04-11 1997-02-11 The United States Of America As Represented By The Secretary Of The Army Gas plasma treatment of cathodes to improve cell performance
US6156666A (en) * 1996-11-15 2000-12-05 Nec Corporation Method of dry etching and apparatus for making exhaust gas non-toxic
US6284146B1 (en) * 1996-06-13 2001-09-04 Samsung Electronics Co., Ltd. Etching gas mixture for transition metal thin film and method for etching transition metal thin film using the same
US7229563B2 (en) * 2002-01-29 2007-06-12 Tokyo Electron Limited Plasma etching of Ni-containing materials

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145131A (en) * 1982-02-23 1983-08-29 Fujitsu Ltd Dry etching of chrome film
JPS61256638A (en) * 1985-05-03 1986-11-14 テキサス　インスツルメンツ　インコーポレイテッド Patternization of thin film wiring layer
EP0285129A2 (en) * 1987-03-31 1988-10-05 Kabushiki Kaisha Toshiba Dry etching method
JPS63244848A (en) * 1987-03-31 1988-10-12 Toshiba Corp Dry etching method
US5091050A (en) * 1987-03-31 1992-02-25 Kabushiki Kaisha Toshiba Dry etching method
US5601948A (en) * 1995-04-11 1997-02-11 The United States Of America As Represented By The Secretary Of The Army Gas plasma treatment of cathodes to improve cell performance
US6284146B1 (en) * 1996-06-13 2001-09-04 Samsung Electronics Co., Ltd. Etching gas mixture for transition metal thin film and method for etching transition metal thin film using the same
US6156666A (en) * 1996-11-15 2000-12-05 Nec Corporation Method of dry etching and apparatus for making exhaust gas non-toxic
US7229563B2 (en) * 2002-01-29 2007-06-12 Tokyo Electron Limited Plasma etching of Ni-containing materials

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