JPS548972A - Forming method for fine electrode of semiconductor element - Google Patents
Forming method for fine electrode of semiconductor elementInfo
- Publication number
- JPS548972A JPS548972A JP7517877A JP7517877A JPS548972A JP S548972 A JPS548972 A JP S548972A JP 7517877 A JP7517877 A JP 7517877A JP 7517877 A JP7517877 A JP 7517877A JP S548972 A JPS548972 A JP S548972A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- forming method
- fine electrode
- metal
- fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To make the width of a vopor-deposited electrode fine, by vapor-depositing metal slantingly and by shielding some part of metal by the shoulder of one resist.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7517877A JPS548972A (en) | 1977-06-23 | 1977-06-23 | Forming method for fine electrode of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7517877A JPS548972A (en) | 1977-06-23 | 1977-06-23 | Forming method for fine electrode of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS548972A true JPS548972A (en) | 1979-01-23 |
Family
ID=13568683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7517877A Pending JPS548972A (en) | 1977-06-23 | 1977-06-23 | Forming method for fine electrode of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS548972A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59205767A (en) * | 1983-05-09 | 1984-11-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
US4525919A (en) * | 1982-06-16 | 1985-07-02 | Raytheon Company | Forming sub-micron electrodes by oblique deposition |
WO1987001507A1 (en) * | 1985-08-27 | 1987-03-12 | Lockheed Missiles & Space Company, Inc. | Gate alignment procedure in fabricating semiconductor devices |
JPS63209180A (en) * | 1987-02-25 | 1988-08-30 | Nec Corp | Manufacture of integrated circuit |
US4985369A (en) * | 1987-01-21 | 1991-01-15 | Ford Microelectronics, Inc. | Method for making self-aligned ohmic contacts |
-
1977
- 1977-06-23 JP JP7517877A patent/JPS548972A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4525919A (en) * | 1982-06-16 | 1985-07-02 | Raytheon Company | Forming sub-micron electrodes by oblique deposition |
JPS59205767A (en) * | 1983-05-09 | 1984-11-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
WO1987001507A1 (en) * | 1985-08-27 | 1987-03-12 | Lockheed Missiles & Space Company, Inc. | Gate alignment procedure in fabricating semiconductor devices |
US4985369A (en) * | 1987-01-21 | 1991-01-15 | Ford Microelectronics, Inc. | Method for making self-aligned ohmic contacts |
JPS63209180A (en) * | 1987-02-25 | 1988-08-30 | Nec Corp | Manufacture of integrated circuit |
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