JPS548972A - Forming method for fine electrode of semiconductor element - Google Patents

Forming method for fine electrode of semiconductor element

Info

Publication number
JPS548972A
JPS548972A JP7517877A JP7517877A JPS548972A JP S548972 A JPS548972 A JP S548972A JP 7517877 A JP7517877 A JP 7517877A JP 7517877 A JP7517877 A JP 7517877A JP S548972 A JPS548972 A JP S548972A
Authority
JP
Japan
Prior art keywords
semiconductor element
forming method
fine electrode
metal
fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7517877A
Other languages
Japanese (ja)
Inventor
Shigeru Mitsui
Yoshinobu Kadowaki
Masaaki Nakatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7517877A priority Critical patent/JPS548972A/en
Publication of JPS548972A publication Critical patent/JPS548972A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To make the width of a vopor-deposited electrode fine, by vapor-depositing metal slantingly and by shielding some part of metal by the shoulder of one resist.
COPYRIGHT: (C)1979,JPO&Japio
JP7517877A 1977-06-23 1977-06-23 Forming method for fine electrode of semiconductor element Pending JPS548972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7517877A JPS548972A (en) 1977-06-23 1977-06-23 Forming method for fine electrode of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7517877A JPS548972A (en) 1977-06-23 1977-06-23 Forming method for fine electrode of semiconductor element

Publications (1)

Publication Number Publication Date
JPS548972A true JPS548972A (en) 1979-01-23

Family

ID=13568683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7517877A Pending JPS548972A (en) 1977-06-23 1977-06-23 Forming method for fine electrode of semiconductor element

Country Status (1)

Country Link
JP (1) JPS548972A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205767A (en) * 1983-05-09 1984-11-21 Mitsubishi Electric Corp Manufacture of semiconductor device
US4525919A (en) * 1982-06-16 1985-07-02 Raytheon Company Forming sub-micron electrodes by oblique deposition
WO1987001507A1 (en) * 1985-08-27 1987-03-12 Lockheed Missiles & Space Company, Inc. Gate alignment procedure in fabricating semiconductor devices
JPS63209180A (en) * 1987-02-25 1988-08-30 Nec Corp Manufacture of integrated circuit
US4985369A (en) * 1987-01-21 1991-01-15 Ford Microelectronics, Inc. Method for making self-aligned ohmic contacts

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525919A (en) * 1982-06-16 1985-07-02 Raytheon Company Forming sub-micron electrodes by oblique deposition
JPS59205767A (en) * 1983-05-09 1984-11-21 Mitsubishi Electric Corp Manufacture of semiconductor device
WO1987001507A1 (en) * 1985-08-27 1987-03-12 Lockheed Missiles & Space Company, Inc. Gate alignment procedure in fabricating semiconductor devices
US4985369A (en) * 1987-01-21 1991-01-15 Ford Microelectronics, Inc. Method for making self-aligned ohmic contacts
JPS63209180A (en) * 1987-02-25 1988-08-30 Nec Corp Manufacture of integrated circuit

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