JPS58145131A - Dry etching of chrome film - Google Patents
Dry etching of chrome filmInfo
- Publication number
- JPS58145131A JPS58145131A JP2963982A JP2963982A JPS58145131A JP S58145131 A JPS58145131 A JP S58145131A JP 2963982 A JP2963982 A JP 2963982A JP 2963982 A JP2963982 A JP 2963982A JP S58145131 A JPS58145131 A JP S58145131A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- dry etching
- glass substrate
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 9
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910002091 carbon monoxide Inorganic materials 0.000 claims abstract 6
- 239000011651 chromium Substances 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- -1 carbonate compound Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 17
- 239000011521 glass Substances 0.000 abstract description 8
- 150000001728 carbonyl compounds Chemical class 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は半導体装置の製造工程で使用されるクロムマス
クのクロム（Ｃｒ Ｊ４の］゛ライエツチング方法に関
し、特に低エネルギーでＯｒ薄膜をエツチング除去する
新規なドライエツチング方法に関する。Detailed Description of the Invention (a) Technical Field of the Invention The present invention relates to a method for etching chromium (Cr J4) from a chromium mask used in the manufacturing process of semiconductor devices, and in particular to a method for etching away an Or thin film with low energy. This invention relates to a new dry etching method.
山）従来技術と問題、白
近年、例えば半導体装置の製造用としてクロムマスクを
形成するＷ１合には、ガラヌ基板トに被着レジスト膜パ
ターンを被覆し、そのガラス基板をプラズマエツチング
装置に入れて、１８．５６”（ｚｌ数１００ ワットの
高周波′ｉ「、力を印加し、四塩化病％ｆ（ＣＣ１４）
ガスを流入してエツチングするいわゆるフ０ブズマエッ
チング（ドライエツチングの一種）が用いられている。In recent years, for example, when forming a chrome mask for the manufacture of semiconductor devices, a glass substrate is coated with a resist film pattern, and the glass substrate is placed in a plasma etching device. , 18.56" (zl number 100 Watts high frequency'i", force applied, tetrachloride %f (CC14)
So-called bubble etching (a type of dry etching) is used in which etching is performed by introducing gas.
このようなドライエツチング方法は、従前より知られて
いるウェットエツチング方法に比べてパターン端部が高
精度に形成される利点があるが、高電力を用いる高エネ
ルギー処理方式であるから消費電力が大きくて電源は大
型となシ、エツチング装置は複雑となって安定性に欠け
る。′また、高エネルギーが加わる上に上記ＯＣＩ ４
ガスに約同量の酸素（０２）も加える必要があるから、
そのためフォトレジスト膜が損傷を受けやすく、エツチ
ングの湿度と時間を精度良く制御しなければ、バメー７
精度を良くすることは難しい。This type of dry etching method has the advantage of forming pattern edges with higher precision than the previously known wet etching method, but because it is a high energy processing method that uses high power, it consumes a lot of power. The power supply is large, and the etching device is complex and unstable. 'Also, in addition to adding high energy, the above OCI 4
Since it is necessary to add about the same amount of oxygen (02) to the gas,
Therefore, the photoresist film is easily damaged, and if the etching humidity and time are not precisely controlled, the photoresist film may be damaged.
Improving accuracy is difficult.
第１図にこのようなプラス゛マエッチング装闇ノー例の
４１Ｖｉ委ＨＪｒ而図を示しており、■は（：Ｂ位を被
したガラス紙板、２はヒーター付基板支持！！極。Figure 1 shows a diagram of the 41Vi board without such plasma etching.
ＢはＣ０１４＋０２ガスが流入される対向電極で、反応
容３Ｈ内の減圧度を０．５Ｔｏｒｒ程度にして高周波電
力が印加されて、露出した（Ｈｒ股がエツチングされる
。B is a counter electrode into which C014+02 gas is introduced, and high frequency power is applied with the degree of vacuum in the reaction chamber 3H being about 0.5 Torr, and the exposed (Hr) portion is etched.
（Ｃ） 発明の目的
本発明は上記したような問題点を解消させて、低エネル
ギーによシフオドレジスト膜を傷めることな（にｒ膜を
エツチングする方法を提案するものである。(C) Purpose of the Invention The present invention solves the above-mentioned problems and proposes a method of etching a shift resist film using low energy without damaging the resist film.
（ｄ） 発明の構成
その目的は一酸化伏素（ＣＯ）のホットガスを流入した
減圧気流中で紫外光線を照射し、Ｃｒ膜をカルレボ二μ
化合物として昇華させるドライエツチング方法によって
達成され、以下図面を参照して実施例によシ説明する。(d) Structure of the invention The purpose of the invention is to irradiate the Cr film with ultraviolet light in a reduced-pressure air stream containing hot gas of amorphous monoxide (CO), and to
This is achieved by a dry etching method in which the compound is sublimated, and will be explained below by way of examples with reference to the drawings.
（ｅ） 発明の実施例
第２図は本発明にか＼るドライエツチング方法を適用す
るエツチング装置の概要断面図である。(e) Embodiment of the Invention FIG. 2 is a schematic sectional view of an etching apparatus to which the dry etching method according to the invention is applied.
反応容器１０内の支持台１１上にガラス基板１を載せ、
支持台１１の全面は紫外線光源１２からの照射光を受け
る構造である。反応容器ｌＯ内は、排気［１１８よシ真
空排気され、反対側のガス流入Ｉ：１１４よりＣＯガス
を流入させて、加熱器１５で加熱して数１０℃のホット
ガスとしてガラス基板１上に送シ込み、その減圧度を数
Ｔｏｒｒにする。Place the glass substrate 1 on the support stand 11 inside the reaction container 10,
The entire surface of the support base 11 is structured to receive irradiation light from the ultraviolet light source 12. The inside of the reaction vessel 1O is evacuated by the exhaust gas [118], and CO gas is introduced from the gas inlet I: 114 on the opposite side, heated by the heater 15, and heated as a hot gas of several tens of degrees Celsius onto the glass substrate 1. The pressure is reduced to several Torr.
ガラス紙板ｌ上の露出したＣｒｐｌ膜は紫外光線で照射
されて、活性化エネルギーを与えられており、その膜に
ホットなＣＯガスが接すると、反応を起してＯｒのカル
ボニル化合物（Ｃｒ（ＣＯ）６）が生成され昇華する。The exposed Crpl film on the glass paper plate is irradiated with ultraviolet light to give activation energy, and when the film comes into contact with hot CO gas, a reaction occurs to form the carbonyl compound of Or (Cr(CO )6) is generated and sublimated.
反応容器はＣＯガスが層流となり、絶えず新鮮なＣＯガ
スをＣｒ膜に接触させるように、小型でガスが流れやす
い左右対称な流線型が望ましい。The reaction vessel is preferably small and symmetrical and streamlined so that the CO gas flows laminarly and fresh CO gas is constantly brought into contact with the Cr film.
又、容器内ガス圧は従来のドライエツチング装置のよう
にｇ 、 ５１’ｏｒｒ程度では反応を起しにく覧て、
また圧力が大きいとかえって反応が進捷ないので数Ｔｏ
ｒｒ程度の減圧度が妥当である。反応生成物の０ｒ（Ｇ
！０）ａは有機溶剤に易溶であるから、廃ガス処理が容
易であり、従来のような有毒な塩素ガスは含まれていな
いので、その点からも反応系は簡易化できる。Also, if the gas pressure inside the container is around 51'orr, as in conventional dry etching equipment, it is difficult to cause a reaction.
Also, if the pressure is high, the reaction will not progress, so several To
A degree of pressure reduction of about rr is appropriate. The reaction product 0r(G
! Since 0) a is easily soluble in organic solvents, waste gas treatment is easy, and since it does not contain toxic chlorine gas unlike conventional methods, the reaction system can be simplified from this point of view as well.
（ｆ） 発明の効果
皇紀実施例から明らかなように、本発明にか＼るドライ
エツチング方法は低エネルギーエツチング法であシ、装
置は単純となり、レジスト膜に損傷を与えることがない
長所の多い方法である。(f) Effects of the Invention As is clear from the examples, the dry etching method according to the present invention is a low-energy etching method, the equipment is simple, and it has many advantages of not damaging the resist film. It's a method.
更に、従来の（！（３１４＋０２ガスによるエツチング
方法では、蒸着法によって被着したＣｒ膜は加熱体から
タングステンが少量混入し、そのタングステンの除去が
難かしかったが、本発明にか一石ＣＯガスによるエツチ
ング方法ではタングステンも同じくカルポニｌし化合物
となるため、ヌバッタ法によるＣｒ被着膜と同じように
エツチング除去することができる。Furthermore, in the conventional etching method using 314+02 gas, a small amount of tungsten was mixed in from the heating element in the Cr film deposited by vapor deposition, and it was difficult to remove the tungsten. In the etching method, since tungsten also becomes a carponyl compound, it can be removed by etching in the same way as the Cr deposited film by the Nubatta method.
したがって、本発明はＯｒ膜除去に最適のドライエツチ
ング法で、フォトマスク製作に極めて役立つ方法と貰え
る。Therefore, the present invention is a dry etching method most suitable for removing an Or film, and can be considered to be an extremely useful method for photomask production.
面図、第２図は本発明にか！るドライエツチング装置の
概要断面図である。図中、ｌはガラス基板。
１０は反応容器、１１は支持台、１２は紫外線光源。
１Ｂは排気口、１４はガス流入０．１６は加熱器を示す
。The front view and Figure 2 are related to the present invention! 1 is a schematic sectional view of a dry etching device. In the figure, l is a glass substrate. 10 is a reaction container, 11 is a support stand, and 12 is an ultraviolet light source. 1B is an exhaust port, 14 is a gas inflow, and 0.16 is a heater.
Claims (1)
りμム膜を形成した基板をさらし、紫外光線を照射し、
クロム膜をカルボ二〜化合物として昇華させることを特
徴とするクロム膜のドライエツチング方法。The substrate with a μm film formed on its surface is exposed to a reduced pressure airflow containing carbon monoxide hot gas, and is irradiated with ultraviolet light.
A method for dry etching a chromium film, characterized by sublimating the chromium film as a carbonate compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2963982A JPS58145131A (en) | 1982-02-23 | 1982-02-23 | Dry etching of chrome film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2963982A JPS58145131A (en) | 1982-02-23 | 1982-02-23 | Dry etching of chrome film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58145131A true JPS58145131A (en) | 1983-08-29 |
Family
ID=12281646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2963982A Pending JPS58145131A (en) | 1982-02-23 | 1982-02-23 | Dry etching of chrome film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58145131A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59195831A (en) * | 1983-04-21 | 1984-11-07 | Toshiba Corp | Surface processing method of semiconductor substrate |
| JPS60239026A (en) * | 1984-05-10 | 1985-11-27 | Mitsubishi Electric Corp | Formation of pattern according to dry etching |
| JPS61270827A (en) * | 1985-05-24 | 1986-12-01 | Mitsubishi Electric Corp | Formation of fine pattern |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130370A (en) * | 1974-04-01 | 1975-10-15 | ||
| JPS5320769A (en) * | 1976-08-10 | 1978-02-25 | Toshiba Corp | Plasma etching method of metal electrodes |
-
1982
- 1982-02-23 JP JP2963982A patent/JPS58145131A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130370A (en) * | 1974-04-01 | 1975-10-15 | ||
| JPS5320769A (en) * | 1976-08-10 | 1978-02-25 | Toshiba Corp | Plasma etching method of metal electrodes |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59195831A (en) * | 1983-04-21 | 1984-11-07 | Toshiba Corp | Surface processing method of semiconductor substrate |
| JPH0475653B2 (en) * | 1983-04-21 | 1992-12-01 | Tokyo Shibaura Electric Co | |
| JPS60239026A (en) * | 1984-05-10 | 1985-11-27 | Mitsubishi Electric Corp | Formation of pattern according to dry etching |
| JPS61270827A (en) * | 1985-05-24 | 1986-12-01 | Mitsubishi Electric Corp | Formation of fine pattern |
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