JP5028033B2 - 酸化物半導体膜のドライエッチング方法 - Google Patents
酸化物半導体膜のドライエッチング方法 Download PDFInfo
- Publication number
- JP5028033B2 JP5028033B2 JP2006163464A JP2006163464A JP5028033B2 JP 5028033 B2 JP5028033 B2 JP 5028033B2 JP 2006163464 A JP2006163464 A JP 2006163464A JP 2006163464 A JP2006163464 A JP 2006163464A JP 5028033 B2 JP5028033 B2 JP 5028033B2
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- Prior art keywords
- etching
- oxide semiconductor
- dry etching
- semiconductor film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006163464A JP5028033B2 (ja) | 2006-06-13 | 2006-06-13 | 酸化物半導体膜のドライエッチング方法 |
| US11/802,276 US8034248B2 (en) | 2006-06-13 | 2007-05-22 | Dry etching method for oxide semiconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006163464A JP5028033B2 (ja) | 2006-06-13 | 2006-06-13 | 酸化物半導体膜のドライエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007335505A JP2007335505A (ja) | 2007-12-27 |
| JP2007335505A5 JP2007335505A5 (enExample) | 2009-07-30 |
| JP5028033B2 true JP5028033B2 (ja) | 2012-09-19 |
Family
ID=38822501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006163464A Expired - Fee Related JP5028033B2 (ja) | 2006-06-13 | 2006-06-13 | 酸化物半導体膜のドライエッチング方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8034248B2 (enExample) |
| JP (1) | JP5028033B2 (enExample) |
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| JPH09326298A (ja) * | 1996-04-01 | 1997-12-16 | Denso Corp | ドライエッチング方法及びel素子の製造方法 |
| JP3543898B2 (ja) | 1996-09-09 | 2004-07-21 | 三井化学株式会社 | エッチング用ガスおよびその製造方法 |
| DE69723538T2 (de) * | 1996-11-29 | 2004-06-09 | Idemitsu Kosan Co. Ltd. | Organisches elektrolumineszentes Bauteil |
| JPH11335874A (ja) | 1998-05-25 | 1999-12-07 | Minolta Co Ltd | 酸化亜鉛膜の加工方法 |
| JP2000238178A (ja) | 1999-02-24 | 2000-09-05 | Teijin Ltd | 透明導電積層体 |
| JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
| US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
| KR101019337B1 (ko) | 2004-03-12 | 2011-03-07 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 아몰퍼스 산화물 및 박막 트랜지스터 |
| JP2005354036A (ja) * | 2004-05-14 | 2005-12-22 | Toppan Printing Co Ltd | 半導体装置の形成方法 |
| JP4524223B2 (ja) * | 2004-07-16 | 2010-08-11 | 富士フイルム株式会社 | 機能素子及びその製造方法、ならびに固体撮像素子及びその製造方法 |
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