JP5028033B2 - 酸化物半導体膜のドライエッチング方法 - Google Patents

酸化物半導体膜のドライエッチング方法 Download PDF

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Publication number
JP5028033B2
JP5028033B2 JP2006163464A JP2006163464A JP5028033B2 JP 5028033 B2 JP5028033 B2 JP 5028033B2 JP 2006163464 A JP2006163464 A JP 2006163464A JP 2006163464 A JP2006163464 A JP 2006163464A JP 5028033 B2 JP5028033 B2 JP 5028033B2
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Prior art keywords
etching
oxide semiconductor
dry etching
semiconductor film
gas
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Expired - Fee Related
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JP2006163464A
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Japanese (ja)
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JP2007335505A (ja
JP2007335505A5 (enExample
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建六 張
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Canon Inc
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Canon Inc
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Priority to JP2006163464A priority Critical patent/JP5028033B2/ja
Priority to US11/802,276 priority patent/US8034248B2/en
Publication of JP2007335505A publication Critical patent/JP2007335505A/ja
Publication of JP2007335505A5 publication Critical patent/JP2007335505A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/138Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70Chemical treatments
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Drying Of Semiconductors (AREA)
JP2006163464A 2006-06-13 2006-06-13 酸化物半導体膜のドライエッチング方法 Expired - Fee Related JP5028033B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006163464A JP5028033B2 (ja) 2006-06-13 2006-06-13 酸化物半導体膜のドライエッチング方法
US11/802,276 US8034248B2 (en) 2006-06-13 2007-05-22 Dry etching method for oxide semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006163464A JP5028033B2 (ja) 2006-06-13 2006-06-13 酸化物半導体膜のドライエッチング方法

Publications (3)

Publication Number Publication Date
JP2007335505A JP2007335505A (ja) 2007-12-27
JP2007335505A5 JP2007335505A5 (enExample) 2009-07-30
JP5028033B2 true JP5028033B2 (ja) 2012-09-19

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Country Link
US (1) US8034248B2 (enExample)
JP (1) JP5028033B2 (enExample)

Families Citing this family (1788)

* Cited by examiner, † Cited by third party
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