JP2012160740A5 - - Google Patents

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JP2012160740A5
JP2012160740A5 JP2012058087A JP2012058087A JP2012160740A5 JP 2012160740 A5 JP2012160740 A5 JP 2012160740A5 JP 2012058087 A JP2012058087 A JP 2012058087A JP 2012058087 A JP2012058087 A JP 2012058087A JP 2012160740 A5 JP2012160740 A5 JP 2012160740A5
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oxide
growth chamber
oxygen
gas
generator installed
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JP2012160740A (ja
JP5451801B2 (ja
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JP2012058087A 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法 Expired - Lifetime JP5451801B2 (ja)

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JP2004326686 2004-11-10
JP2004326686 2004-11-10
JP2012058087A JP5451801B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法

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JP2012160740A JP2012160740A (ja) 2012-08-23
JP2012160740A5 true JP2012160740A5 (https=) 2012-12-06
JP5451801B2 JP5451801B2 (ja) 2014-03-26

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JP2012058163A Expired - Lifetime JP5401571B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058253A Expired - Lifetime JP5401573B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058252A Expired - Lifetime JP5401572B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058087A Expired - Lifetime JP5451801B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法

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JP2012058253A Expired - Lifetime JP5401573B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058252A Expired - Lifetime JP5401572B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法

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Families Citing this family (1843)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BRPI0517560B8 (pt) * 2004-11-10 2018-12-11 Canon Kk transistor de efeito de campo
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
EP2453481B1 (en) * 2004-11-10 2017-01-11 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US7608531B2 (en) 2005-01-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI505473B (zh) * 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7928938B2 (en) * 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
US7710739B2 (en) 2005-04-28 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
EP1758072A3 (en) * 2005-08-24 2007-05-02 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP4560502B2 (ja) * 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
WO2007034935A1 (en) 2005-09-21 2007-03-29 Semiconductor Energy Laboratory Co., Ltd. Cyclic redundancy check circuit and semiconductor device having the cyclic redundancy check circuit
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
EP1935027B1 (en) 2005-10-14 2017-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20090115222A (ko) * 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US7692610B2 (en) * 2005-11-30 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5268249B2 (ja) * 2005-12-14 2013-08-21 キヤノン株式会社 有機発光素子の製造方法
EP1843194A1 (en) 2006-04-06 2007-10-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
KR100785038B1 (ko) * 2006-04-17 2007-12-12 삼성전자주식회사 비정질 ZnO계 TFT
US7443202B2 (en) * 2006-06-02 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic apparatus having the same
JP5127183B2 (ja) 2006-08-23 2013-01-23 キヤノン株式会社 アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法
US7651896B2 (en) 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2008029717A1 (en) * 2006-09-05 2008-03-13 Canon Kabushiki Kaisha Organic light emitting display device
JP5116277B2 (ja) 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP5116290B2 (ja) * 2006-11-21 2013-01-09 キヤノン株式会社 薄膜トランジスタの製造方法
EP2096188B1 (en) * 2006-12-13 2014-01-29 Idemitsu Kosan Co., Ltd. Sputtering target
JP4662075B2 (ja) * 2007-02-02 2011-03-30 株式会社ブリヂストン 薄膜トランジスタ及びその製造方法
KR101509663B1 (ko) 2007-02-16 2015-04-06 삼성전자주식회사 산화물 반도체층 형성 방법 및 이를 이용한 반도체 소자제조방법
US8436349B2 (en) * 2007-02-20 2013-05-07 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
WO2008126492A1 (ja) * 2007-04-05 2008-10-23 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及び電界効果型トランジスタの製造方法
KR101334181B1 (ko) * 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
JP2008277326A (ja) * 2007-04-25 2008-11-13 Canon Inc アモルファス酸化物半導体、半導体デバイス及び薄膜トランジスタ
JPWO2008139860A1 (ja) * 2007-05-07 2010-07-29 出光興産株式会社 半導体薄膜、半導体薄膜の製造方法、および、半導体素子
JP5522889B2 (ja) 2007-05-11 2014-06-18 出光興産株式会社 In−Ga−Zn−Sn系酸化物焼結体、及び物理成膜用ターゲット
JP5542297B2 (ja) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
JP5542296B2 (ja) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 液晶表示装置、表示モジュール及び電子機器
JP4989309B2 (ja) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 液晶表示装置
US7935964B2 (en) * 2007-06-19 2011-05-03 Samsung Electronics Co., Ltd. Oxide semiconductors and thin film transistors comprising the same
WO2008156312A2 (en) 2007-06-19 2008-12-24 Samsung Electronics Co., Ltd. Oxide semiconductors and thin film transistors comprising the same
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
JP5354999B2 (ja) * 2007-09-26 2013-11-27 キヤノン株式会社 電界効果型トランジスタの製造方法
JP4759598B2 (ja) * 2007-09-28 2011-08-31 キヤノン株式会社 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
KR101270174B1 (ko) * 2007-12-03 2013-05-31 삼성전자주식회사 산화물 반도체 박막 트랜지스터의 제조방법
WO2009075161A1 (ja) * 2007-12-12 2009-06-18 Idemitsu Kosan Co., Ltd. パターン化結晶質半導体薄膜、薄膜トランジスタの製造方法、及び電界効果型トランジスタ
CN103258857B (zh) 2007-12-13 2016-05-11 出光兴产株式会社 使用了氧化物半导体的场效应晶体管及其制造方法
KR100936874B1 (ko) * 2007-12-18 2010-01-14 삼성모바일디스플레이주식회사 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를구비하는 유기전계발광 표시 장치의 제조 방법
KR100959109B1 (ko) * 2007-12-24 2010-05-26 삼성모바일디스플레이주식회사 박막 트랜지스터 및 그의 제조방법과, 그를 구비하는평판표시장치
JP5219529B2 (ja) * 2008-01-23 2013-06-26 キヤノン株式会社 電界効果型トランジスタ及び、該電界効果型トランジスタを備えた表示装置
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
NO332409B1 (no) * 2008-01-24 2012-09-17 Well Technology As Anordning og fremgangsmate for a isolere en seksjon av et bronnhull
JP2009206508A (ja) * 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
JP2009267399A (ja) * 2008-04-04 2009-11-12 Fujifilm Corp 半導体装置,半導体装置の製造方法,表示装置及び表示装置の製造方法
KR101496148B1 (ko) * 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR101468591B1 (ko) * 2008-05-29 2014-12-04 삼성전자주식회사 산화물 반도체 및 이를 포함하는 박막 트랜지스터
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
KR101553691B1 (ko) 2008-07-10 2015-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치
TWI770659B (zh) 2008-07-31 2022-07-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
TWI495108B (zh) 2008-07-31 2015-08-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
US9666719B2 (en) 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8945981B2 (en) 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
TWI518800B (zh) 2008-08-08 2016-01-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
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JP5525778B2 (ja) * 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 半導体装置
JP5644071B2 (ja) * 2008-08-20 2014-12-24 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置及びシステム
WO2010023889A1 (ja) 2008-08-27 2010-03-04 出光興産株式会社 電界効果型トランジスタ、その製造方法及びスパッタリングターゲット
US8129718B2 (en) * 2008-08-28 2012-03-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor and thin film transistor using the same
US9082857B2 (en) * 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
TWI569454B (zh) 2008-09-01 2017-02-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5627071B2 (ja) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9306078B2 (en) * 2008-09-08 2016-04-05 Cbrite Inc. Stable amorphous metal oxide semiconductor
KR101657957B1 (ko) * 2008-09-12 2016-09-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2010029859A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
KR101722913B1 (ko) 2008-09-12 2017-04-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101636755B1 (ko) * 2008-09-19 2016-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101622978B1 (ko) * 2008-09-19 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101889287B1 (ko) * 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR102187427B1 (ko) * 2008-09-19 2020-12-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101273913B1 (ko) 2008-09-19 2013-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101611643B1 (ko) * 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103928476A (zh) * 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
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KR101579050B1 (ko) 2008-10-03 2015-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2010038596A1 (en) * 2008-10-03 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Modulation circuit and semiconductor device including the same
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
JP5484853B2 (ja) * 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101799601B1 (ko) * 2008-10-16 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치
JP5361651B2 (ja) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2180518B1 (en) * 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
WO2010047217A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101667909B1 (ko) * 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
JP5616012B2 (ja) 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5442234B2 (ja) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び表示装置
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
KR101631454B1 (ko) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
KR101634411B1 (ko) * 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 표시 장치 및 전자 장치
KR101603303B1 (ko) 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 도전성 산질화물 및 도전성 산질화물막의 제작 방법
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EP2184783B1 (en) * 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
TWI467663B (zh) * 2008-11-07 2015-01-01 Semiconductor Energy Lab 半導體裝置和該半導體裝置的製造方法
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CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
TWI502739B (zh) 2008-11-13 2015-10-01 Semiconductor Energy Lab 半導體裝置及其製造方法
US8232947B2 (en) 2008-11-14 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2010153802A (ja) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
KR102437444B1 (ko) 2008-11-21 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8344387B2 (en) * 2008-11-28 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI585955B (zh) * 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 光感測器及顯示裝置
TWI749283B (zh) 2008-11-28 2021-12-11 日商半導體能源研究所股份有限公司 液晶顯示裝置
KR101643204B1 (ko) * 2008-12-01 2016-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI633371B (zh) 2008-12-03 2018-08-21 半導體能源研究所股份有限公司 液晶顯示裝置
JP5491833B2 (ja) * 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
JP5615540B2 (ja) * 2008-12-19 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN103456794B (zh) * 2008-12-19 2016-08-10 株式会社半导体能源研究所 晶体管的制造方法
EP2515337B1 (en) * 2008-12-24 2016-02-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
TWI476915B (zh) 2008-12-25 2015-03-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101719350B1 (ko) * 2008-12-25 2017-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8330156B2 (en) 2008-12-26 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with a plurality of oxide clusters over the gate insulating layer
TWI474408B (zh) 2008-12-26 2015-02-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101648927B1 (ko) * 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8492756B2 (en) * 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8749930B2 (en) * 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
US8247812B2 (en) * 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8278657B2 (en) 2009-02-13 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
CN101840936B (zh) 2009-02-13 2014-10-08 株式会社半导体能源研究所 包括晶体管的半导体装置及其制造方法
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8841661B2 (en) * 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5504008B2 (ja) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
KR102068632B1 (ko) 2009-03-12 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI556323B (zh) * 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
US8450144B2 (en) * 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI511288B (zh) 2009-03-27 2015-12-01 Semiconductor Energy Lab 半導體裝置
KR101681884B1 (ko) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
KR101752640B1 (ko) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
TWI485851B (zh) * 2009-03-30 2015-05-21 Semiconductor Energy Lab 半導體裝置及其製造方法
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI489628B (zh) * 2009-04-02 2015-06-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI476917B (zh) 2009-04-16 2015-03-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101690216B1 (ko) * 2009-05-01 2016-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5751762B2 (ja) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2256814B1 (en) * 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
JPWO2011001715A1 (ja) * 2009-06-29 2012-12-13 シャープ株式会社 酸化物半導体、薄膜トランジスタアレイ基板及びその製造方法、並びに、表示装置
KR101810699B1 (ko) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
EP2449594B1 (en) 2009-06-30 2019-08-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011001881A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102011616B1 (ko) 2009-06-30 2019-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
US20110000175A1 (en) * 2009-07-01 2011-01-06 Husqvarna Consumer Outdoor Products N.A. Inc. Variable speed controller
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101476817B1 (ko) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
WO2011001822A1 (en) * 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5640478B2 (ja) * 2009-07-09 2014-12-17 株式会社リコー 電界効果型トランジスタの製造方法及び電界効果型トランジスタ
KR101422362B1 (ko) 2009-07-10 2014-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 패널 및 전자 기기
WO2011004723A1 (en) 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
KR20210131462A (ko) * 2009-07-10 2021-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 제작 방법
WO2011007682A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101739154B1 (ko) * 2009-07-17 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011007677A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101870460B1 (ko) * 2009-07-18 2018-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR101782176B1 (ko) 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
WO2011010545A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2457256B1 (en) 2009-07-18 2020-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011010542A1 (en) * 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011010546A1 (en) 2009-07-24 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101981441B1 (ko) 2009-07-31 2019-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102473734B (zh) * 2009-07-31 2015-08-12 株式会社半导体能源研究所 半导体装置及其制造方法
KR102057299B1 (ko) 2009-07-31 2019-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 그 형성 방법
WO2011013502A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5663231B2 (ja) * 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
TWI604594B (zh) 2009-08-07 2017-11-01 半導體能源研究所股份有限公司 半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
TWI596741B (zh) * 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI559501B (zh) * 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI650848B (zh) * 2009-08-07 2019-02-11 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP5642447B2 (ja) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027649A1 (en) * 2009-09-02 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
KR101746198B1 (ko) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9805641B2 (en) * 2009-09-04 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
KR20250030527A (ko) 2009-09-04 2025-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR101836532B1 (ko) 2009-09-04 2018-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011027702A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
CN102484140B (zh) 2009-09-04 2015-04-22 株式会社半导体能源研究所 半导体器件的制造方法
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
CN105679834A (zh) * 2009-09-16 2016-06-15 株式会社半导体能源研究所 晶体管及显示设备
KR102293198B1 (ko) * 2009-09-16 2021-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102246529B1 (ko) * 2009-09-16 2021-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011033914A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device and display device
WO2011034012A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
WO2011033909A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
KR102369012B1 (ko) 2009-09-16 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
CN102474256B (zh) 2009-09-24 2016-03-02 株式会社半导体能源研究所 驱动器电路、包括驱动器电路的显示设备以及包括显示设备的电子电器
WO2011036981A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20220127372A (ko) 2009-09-24 2022-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
KR20180031077A (ko) * 2009-09-24 2018-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011037008A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
KR101740943B1 (ko) * 2009-09-24 2017-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011037050A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101809759B1 (ko) * 2009-09-24 2018-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자 및 그 제조 방법
TWI512997B (zh) 2009-09-24 2015-12-11 半導體能源研究所股份有限公司 半導體裝置,電源電路,和半導體裝置的製造方法
CN102576608B (zh) * 2009-09-30 2015-06-03 株式会社半导体能源研究所 氧化还原电容器以及其制造方法
WO2011040213A1 (en) * 2009-10-01 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043163A1 (en) * 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
CN105185837B (zh) * 2009-10-08 2018-08-03 株式会社半导体能源研究所 半导体器件、显示装置和电子电器
CN102484139B (zh) 2009-10-08 2016-07-06 株式会社半导体能源研究所 氧化物半导体层及半导体装置
KR102295450B1 (ko) * 2009-10-09 2021-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101820973B1 (ko) * 2009-10-09 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
CN103984176B (zh) * 2009-10-09 2016-01-20 株式会社半导体能源研究所 液晶显示装置及包括该液晶显示装置的电子设备
KR101693816B1 (ko) * 2009-10-09 2017-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 시프트 레지스터, 표시 장치, 및 그 구동 방법
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043218A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9171640B2 (en) 2009-10-09 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device
CN102549638B (zh) 2009-10-09 2015-04-01 株式会社半导体能源研究所 发光显示器件以及包括该发光显示器件的电子设备
KR101396096B1 (ko) * 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011043164A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
WO2011046003A1 (en) * 2009-10-14 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011046025A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
KR101865546B1 (ko) 2009-10-16 2018-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
KR102005736B1 (ko) 2009-10-16 2019-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101988819B1 (ko) 2009-10-16 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 이를 구비한 전자 장치
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
MY166003A (en) 2009-10-21 2018-05-21 Semiconductor Energy Lab Display device and electronic device including display device
KR102377866B1 (ko) 2009-10-21 2022-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
JP5730529B2 (ja) 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 半導体装置
CN102598280B (zh) 2009-10-21 2016-05-18 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
CN104485336B (zh) 2009-10-21 2018-01-02 株式会社半导体能源研究所 半导体器件
WO2011048959A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130130879A (ko) 2009-10-21 2013-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
KR20260036405A (ko) 2009-10-29 2026-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
MY164205A (en) * 2009-10-29 2017-11-30 Semiconductor Energy Lab Semiconductor device
KR101712340B1 (ko) * 2009-10-30 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치, 및 표시 장치를 포함하는 전자 기기
KR101752518B1 (ko) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011052410A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
WO2011052411A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011052409A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101835155B1 (ko) * 2009-10-30 2018-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치, 액정 표시 장치의 구동 방법 및 액정 표시 장치를 포함하는 전자 기기
EP2494597A4 (en) * 2009-10-30 2015-03-18 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
WO2011052385A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102142450B1 (ko) 2009-10-30 2020-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101796909B1 (ko) 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
WO2011052366A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
SG188112A1 (en) 2009-10-30 2013-03-28 Semiconductor Energy Lab Logic circuit and semiconductor device
KR101747158B1 (ko) 2009-11-06 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101727469B1 (ko) * 2009-11-06 2017-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102220606B1 (ko) * 2009-11-06 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102612741B (zh) 2009-11-06 2014-11-12 株式会社半导体能源研究所 半导体装置
JP5539846B2 (ja) 2009-11-06 2014-07-02 株式会社半導体エネルギー研究所 評価方法、半導体装置の作製方法
KR101876473B1 (ko) 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2011055625A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
WO2011055668A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101876470B1 (ko) * 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120093952A (ko) * 2009-11-06 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자 및 반도체 장치 제조 방법과, 성막 장치
KR101761432B1 (ko) 2009-11-06 2017-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102668097B (zh) * 2009-11-13 2015-08-12 株式会社半导体能源研究所 半导体器件及其制造方法
KR101975741B1 (ko) * 2009-11-13 2019-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 타깃 재료의 포장 방법 및 타깃의 장착 방법
KR101738996B1 (ko) * 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 메모리 소자를 포함하는 장치
WO2011058852A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102612714B (zh) 2009-11-13 2016-06-29 株式会社半导体能源研究所 半导体器件及其驱动方法
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102037048B1 (ko) * 2009-11-13 2019-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR20230174763A (ko) 2009-11-13 2023-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
WO2011058867A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing the same, and transistor
KR20170072965A (ko) 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 그 제조방법, 및 트랜지스터
WO2011062029A1 (en) 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
WO2011062041A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
CN102598266B (zh) * 2009-11-20 2015-04-22 株式会社半导体能源研究所 半导体装置
KR20140074404A (ko) 2009-11-20 2014-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
CN103151266B (zh) 2009-11-20 2016-08-03 株式会社半导体能源研究所 用于制造半导体器件的方法
EP2887395B1 (en) 2009-11-20 2019-05-08 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
JP5762723B2 (ja) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 変調回路及びそれを備えた半導体装置
WO2011062068A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011062058A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101800852B1 (ko) 2009-11-20 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101922849B1 (ko) 2009-11-20 2018-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011065183A1 (en) * 2009-11-24 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
KR101911382B1 (ko) * 2009-11-27 2018-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103400857B (zh) 2009-11-27 2016-12-28 株式会社半导体能源研究所 半导体装置和及其制造方法
KR20170091760A (ko) 2009-11-27 2017-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011065209A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
KR101824124B1 (ko) 2009-11-28 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102668028B (zh) * 2009-11-28 2015-09-02 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
KR102089200B1 (ko) 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN102648490B (zh) 2009-11-30 2016-08-17 株式会社半导体能源研究所 液晶显示设备、用于驱动该液晶显示设备的方法、以及包括该液晶显示设备的电子设备
JP2011139052A (ja) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体記憶装置
WO2011068028A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
KR101396102B1 (ko) 2009-12-04 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101840623B1 (ko) * 2009-12-04 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이를 포함하는 전자 기기
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
KR101833198B1 (ko) 2009-12-04 2018-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이를 포함하는 전자 기기
KR102929405B1 (ko) 2009-12-04 2026-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101501420B1 (ko) 2009-12-04 2015-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN102648525B (zh) 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
KR20120103676A (ko) * 2009-12-04 2012-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5584103B2 (ja) 2009-12-04 2014-09-03 株式会社半導体エネルギー研究所 半導体装置
WO2011068022A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102640272B (zh) 2009-12-04 2015-05-20 株式会社半导体能源研究所 半导体装置及其制造方法
KR101835300B1 (ko) * 2009-12-08 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101511076B1 (ko) * 2009-12-08 2015-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011070902A1 (en) 2009-12-10 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
WO2011070929A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR20120102748A (ko) 2009-12-11 2012-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터
KR101894821B1 (ko) 2009-12-11 2018-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011070905A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR101804589B1 (ko) 2009-12-11 2018-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP5727204B2 (ja) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011074590A1 (en) 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
KR102329671B1 (ko) 2009-12-18 2021-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101729933B1 (ko) * 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
WO2011074409A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101763660B1 (ko) * 2009-12-18 2017-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 구동 방법
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2513966B1 (en) 2009-12-18 2020-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102667910B (zh) 2009-12-18 2015-11-25 株式会社半导体能源研究所 液晶显示设备和电子设备
WO2011074394A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Display device including optical sensor and driving method thereof
US9057758B2 (en) * 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
CN105429621B (zh) * 2009-12-23 2019-03-19 株式会社半导体能源研究所 半导体装置
WO2011077916A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20120101716A (ko) 2009-12-24 2012-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
WO2011077978A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102459005B1 (ko) 2009-12-25 2022-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치, 반도체 장치, 및 전자 장치
KR101613701B1 (ko) 2009-12-25 2016-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
US8441009B2 (en) * 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP3550604A1 (en) 2009-12-25 2019-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011077966A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
CN102668098B (zh) 2009-12-28 2015-07-22 株式会社半导体能源研究所 制造半导体装置的方法
KR102480794B1 (ko) 2009-12-28 2022-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
WO2011081010A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
WO2011080998A1 (en) * 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102714184B (zh) * 2009-12-28 2016-05-18 株式会社半导体能源研究所 半导体器件
KR101748763B1 (ko) 2010-01-15 2017-06-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
KR101791279B1 (ko) * 2010-01-15 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101798367B1 (ko) 2010-01-15 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102471810B1 (ko) 2010-01-15 2022-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 구동하는 방법
CN102742003B (zh) 2010-01-15 2015-01-28 株式会社半导体能源研究所 半导体器件
CN102725841B (zh) * 2010-01-15 2016-10-05 株式会社半导体能源研究所 半导体器件
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
CN102713999B (zh) * 2010-01-20 2016-01-20 株式会社半导体能源研究所 电子设备和电子系统
KR102253973B1 (ko) * 2010-01-20 2021-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011089808A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101747421B1 (ko) 2010-01-20 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
US9984617B2 (en) 2010-01-20 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device including light emitting element
CN102714029B (zh) * 2010-01-20 2016-03-23 株式会社半导体能源研究所 显示装置的显示方法
WO2011089847A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
WO2011089832A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device and liquid crystal display device
WO2011089843A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
US8415731B2 (en) * 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR102248998B1 (ko) 2010-01-20 2021-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
WO2011089841A1 (en) 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20180043383A (ko) 2010-01-22 2018-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR101952555B1 (ko) * 2010-01-22 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102008754B1 (ko) 2010-01-24 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR102135326B1 (ko) 2010-01-24 2020-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101893904B1 (ko) * 2010-01-29 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2011093151A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the same
KR20120120330A (ko) 2010-01-29 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102628681B1 (ko) 2010-02-05 2024-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR101921618B1 (ko) 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR102581069B1 (ko) 2010-02-05 2023-09-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011096262A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011096286A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and semiconductor device
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
WO2011096275A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101862823B1 (ko) * 2010-02-05 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
CN102725842B (zh) * 2010-02-05 2014-12-03 株式会社半导体能源研究所 半导体器件
WO2011099342A1 (en) * 2010-02-10 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101830196B1 (ko) 2010-02-12 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
US8617920B2 (en) 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011099376A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
CN102754209B (zh) 2010-02-12 2015-11-25 株式会社半导体能源研究所 半导体装置及其驱动方法
WO2011099335A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101775180B1 (ko) 2010-02-12 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
CN102741915B (zh) 2010-02-12 2015-12-16 株式会社半导体能源研究所 显示装置及驱动方法
WO2011099389A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
KR101817054B1 (ko) * 2010-02-12 2018-01-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 포함한 표시 장치
KR102528702B1 (ko) * 2010-02-18 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 장치
WO2011102203A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device using the same
WO2011102190A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Demodulation circuit and rfid tag including the demodulation circuit
WO2011102206A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
CN104617105B (zh) 2010-02-19 2018-01-26 株式会社半导体能源研究所 半导体装置
US8928644B2 (en) 2010-02-19 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving display device
JP5740169B2 (ja) * 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
CN102754162B (zh) 2010-02-19 2015-12-09 株式会社半导体能源研究所 半导体器件及半导体器件的驱动方法
KR102081035B1 (ko) * 2010-02-19 2020-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
WO2011102183A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101848684B1 (ko) * 2010-02-19 2018-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 장치
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
KR102151495B1 (ko) 2010-02-23 2020-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011105183A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and deposition apparatus
KR20190000365A (ko) * 2010-02-26 2019-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
WO2011105198A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101733765B1 (ko) * 2010-02-26 2017-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 표시장치의 구동 방법
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102754022B (zh) * 2010-02-26 2016-11-09 株式会社半导体能源研究所 液晶显示装置
KR101803552B1 (ko) * 2010-02-26 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비하는 전자 서적
US9000438B2 (en) 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102420689B1 (ko) 2010-02-26 2022-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101838628B1 (ko) * 2010-03-02 2018-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 펄스 신호 출력 회로 및 시프트 레지스터
KR101767037B1 (ko) 2010-03-02 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 승압 회로 및 승압 회로를 포함하는 rfid 태그
KR101828960B1 (ko) * 2010-03-02 2018-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 펄스 신호 출력 회로 및 시프트 레지스터
CN102783025B (zh) 2010-03-02 2015-10-07 株式会社半导体能源研究所 脉冲信号输出电路和移位寄存器
KR101932909B1 (ko) * 2010-03-04 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 반도체 장치
KR102268217B1 (ko) 2010-03-05 2021-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101878206B1 (ko) * 2010-03-05 2018-07-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법
WO2011108374A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20130008037A (ko) * 2010-03-05 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
KR102192753B1 (ko) 2010-03-08 2020-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
KR101791253B1 (ko) 2010-03-08 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자기기 및 전자 시스템
TW201732525A (zh) * 2010-03-08 2017-09-16 半導體能源研究所股份有限公司 電子裝置及電子系統
DE112011100842T5 (de) 2010-03-08 2013-01-17 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und Verfahren zu dessen Herstellung
WO2011111505A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011111522A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011111490A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101823853B1 (ko) * 2010-03-12 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8900362B2 (en) * 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
KR101770550B1 (ko) * 2010-03-12 2017-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법
KR101840185B1 (ko) 2010-03-12 2018-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로를 구동하는 방법 및 표시 장치를 구동하는 방법
WO2011111529A1 (en) 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101761558B1 (ko) * 2010-03-12 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 입력 회로를 구동하는 방법 및 입출력 장치를 구동하는 방법
WO2011114866A1 (en) * 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US20110227082A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101891065B1 (ko) * 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 구동 방법
KR101840797B1 (ko) 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102812547B (zh) * 2010-03-19 2015-09-09 株式会社半导体能源研究所 半导体装置
WO2011118351A1 (en) * 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011118741A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011118509A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130062919A (ko) * 2010-03-26 2013-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
WO2011118364A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5731244B2 (ja) * 2010-03-26 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011122271A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Field-sequential display device
KR101761966B1 (ko) 2010-03-31 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전력 공급 장치와 그 구동 방법
CN102844873B (zh) 2010-03-31 2015-06-17 株式会社半导体能源研究所 半导体显示装置
KR101814367B1 (ko) 2010-03-31 2018-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 구동 방법
WO2011122299A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
KR102436902B1 (ko) 2010-04-02 2022-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
CN102834922B (zh) 2010-04-02 2016-04-13 株式会社半导体能源研究所 半导体装置
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
US8906739B2 (en) 2010-04-06 2014-12-09 Sharp Kabushiki Kaisha Thin film transistor substrate and method for manufacturing same
KR101884031B1 (ko) 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR101810592B1 (ko) 2010-04-07 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR101465192B1 (ko) 2010-04-09 2014-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011125806A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
DE112011101260T5 (de) 2010-04-09 2013-05-02 Semiconductor Energy Laboratory Co., Ltd. Flüssigkristall-Anzeigevorrichtung und Verfahren zum Ansteuern derselben
WO2011125456A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130036739A (ko) 2010-04-09 2013-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체 메모리 장치
JP5744366B2 (ja) 2010-04-12 2015-07-08 株式会社半導体エネルギー研究所 液晶表示装置
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
US8552712B2 (en) 2010-04-16 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
WO2011129233A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102844847B (zh) 2010-04-16 2015-09-23 株式会社半导体能源研究所 沉积方法及半导体装置的制造方法
WO2011129209A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Power source circuit
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN106057907B (zh) 2010-04-23 2019-10-22 株式会社半导体能源研究所 半导体装置的制造方法
WO2011132590A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011132529A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102870151B (zh) 2010-04-23 2016-03-30 株式会社半导体能源研究所 显示装置以及其驱动方法
WO2011132625A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2011132548A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2011136018A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
WO2011135988A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and driving method the same
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
JP5797449B2 (ja) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 半導体装置の評価方法
WO2011142467A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI511236B (zh) 2010-05-14 2015-12-01 Semiconductor Energy Lab 半導體裝置
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145738A1 (en) 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US9496405B2 (en) * 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8416622B2 (en) 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145707A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2011145537A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5714973B2 (ja) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 半導体装置
WO2011145538A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8906756B2 (en) 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130077839A (ko) 2010-05-21 2013-07-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5852793B2 (ja) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145706A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5766012B2 (ja) 2010-05-21 2015-08-19 株式会社半導体エネルギー研究所 液晶表示装置
WO2011145467A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP5749975B2 (ja) 2010-05-28 2015-07-15 株式会社半導体エネルギー研究所 光検出装置、及び、タッチパネル
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
WO2011152254A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152233A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152286A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
WO2011155302A1 (en) 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101938726B1 (ko) 2010-06-11 2019-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
JP5797471B2 (ja) 2010-06-16 2015-10-21 株式会社半導体エネルギー研究所 入出力装置
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
JP5823740B2 (ja) 2010-06-16 2015-11-25 株式会社半導体エネルギー研究所 入出力装置
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101862808B1 (ko) * 2010-06-18 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101746197B1 (ko) 2010-06-25 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치의 검사 방법
KR20120000499A (ko) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9437454B2 (en) 2010-06-29 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
WO2012002104A1 (en) 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9473714B2 (en) 2010-07-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Solid-state imaging device and semiconductor display device
KR101350751B1 (ko) 2010-07-01 2014-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5792524B2 (ja) 2010-07-02 2015-10-14 株式会社半導体エネルギー研究所 装置
KR102479939B1 (ko) 2010-07-02 2022-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012002292A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR20130090405A (ko) 2010-07-02 2013-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
TWI541782B (zh) 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 液晶顯示裝置
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101850567B1 (ko) 2010-07-16 2018-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101859361B1 (ko) 2010-07-16 2018-05-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8519387B2 (en) 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
WO2012014790A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102143469B1 (ko) 2010-07-27 2020-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI565001B (zh) 2010-07-28 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
JP5846789B2 (ja) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 半導体装置
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101842181B1 (ko) 2010-08-04 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
JP5739257B2 (ja) 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5671418B2 (ja) 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US8467231B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5832181B2 (ja) 2010-08-06 2015-12-16 株式会社半導体エネルギー研究所 液晶表示装置
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
TWI545587B (zh) 2010-08-06 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及驅動半導體裝置的方法
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
KR101925159B1 (ko) 2010-08-06 2018-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI605549B (zh) 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
JP5848912B2 (ja) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI621184B (zh) 2010-08-16 2018-04-11 半導體能源研究所股份有限公司 半導體裝置之製造方法
TWI508294B (zh) 2010-08-19 2015-11-11 半導體能源研究所股份有限公司 半導體裝置
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013009285A (ja) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
JP5727892B2 (ja) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
JP5674594B2 (ja) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
KR102115344B1 (ko) 2010-08-27 2020-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
JP5806043B2 (ja) 2010-08-27 2015-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5763474B2 (ja) 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 光センサ
KR20120020073A (ko) 2010-08-27 2012-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 설계 방법
JP5702689B2 (ja) 2010-08-31 2015-04-15 株式会社半導体エネルギー研究所 半導体装置の駆動方法、及び半導体装置
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8728860B2 (en) 2010-09-03 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2012029612A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130102581A (ko) 2010-09-03 2013-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 반도체 장치의 제조 방법
JP2012256819A (ja) 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
KR101824125B1 (ko) 2010-09-10 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR20120026970A (ko) 2010-09-10 2012-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 발광 장치
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI608486B (zh) 2010-09-13 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
JP5815337B2 (ja) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 半導体装置
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
KR101872926B1 (ko) 2010-09-13 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5827520B2 (ja) 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 半導体記憶装置
KR101952235B1 (ko) 2010-09-13 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
TWI670711B (zh) 2010-09-14 2019-09-01 日商半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR20130106398A (ko) 2010-09-15 2013-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 제작 방법
JP2012256012A (ja) 2010-09-15 2012-12-27 Semiconductor Energy Lab Co Ltd 表示装置
KR101426515B1 (ko) 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
KR101856722B1 (ko) 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
TWI691960B (zh) 2010-10-05 2020-04-21 日商半導體能源研究所股份有限公司 半導體記憶體裝置及其驅動方法
TWI556317B (zh) 2010-10-07 2016-11-01 半導體能源研究所股份有限公司 薄膜元件、半導體裝置以及它們的製造方法
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
US8546892B2 (en) 2010-10-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI543158B (zh) 2010-10-25 2016-07-21 半導體能源研究所股份有限公司 半導體儲存裝置及其驅動方法
JP5771505B2 (ja) 2010-10-29 2015-09-02 株式会社半導体エネルギー研究所 受信回路
KR101924231B1 (ko) 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR101952456B1 (ko) 2010-10-29 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치
JP5857970B2 (ja) 2010-11-02 2016-02-10 宇部興産株式会社 (アミドアミノアルカン)金属化合物、及び当該金属化合物を用いた金属含有薄膜の製造方法
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6010291B2 (ja) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 表示装置の駆動方法
KR102130257B1 (ko) 2010-11-05 2020-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
TWI555205B (zh) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
WO2012060202A1 (en) 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
TWI593115B (zh) 2010-11-11 2017-07-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5770068B2 (ja) 2010-11-12 2015-08-26 株式会社半導体エネルギー研究所 半導体装置
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809852B2 (en) 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI590249B (zh) 2010-12-03 2017-07-01 半導體能源研究所股份有限公司 積體電路,其驅動方法,及半導體裝置
JP5908263B2 (ja) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 Dc−dcコンバータ
KR20200052993A (ko) 2010-12-03 2020-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
KR101345535B1 (ko) 2010-12-08 2013-12-26 샤프 가부시키가이샤 반도체 장치 및 표시 장치
US8957462B2 (en) 2010-12-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
TWI534905B (zh) 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 顯示裝置及顯示裝置之製造方法
JP2012256020A (ja) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
JP2012142562A (ja) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6030298B2 (ja) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
JP5852874B2 (ja) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 半導体装置
JP5864054B2 (ja) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
JP5975635B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
WO2012090974A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5993141B2 (ja) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 記憶装置
JP2012151453A (ja) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
US8735892B2 (en) 2010-12-28 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using oxide semiconductor
TWI525614B (zh) 2011-01-05 2016-03-11 半導體能源研究所股份有限公司 儲存元件、儲存裝置、及信號處理電路
US8912080B2 (en) 2011-01-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of the semiconductor device
US8921948B2 (en) 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI570809B (zh) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI535032B (zh) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
KR102026718B1 (ko) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
TWI492368B (zh) 2011-01-14 2015-07-11 半導體能源研究所股份有限公司 半導體記憶裝置
JP5859839B2 (ja) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子
US8916867B2 (en) 2011-01-20 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor element and semiconductor device
US9601178B2 (en) 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
CN103348464B (zh) 2011-01-26 2016-01-13 株式会社半导体能源研究所 半导体装置及其制造方法
TWI570920B (zh) 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5798933B2 (ja) 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 信号処理回路
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI602303B (zh) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI787452B (zh) 2011-01-26 2022-12-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR20130140824A (ko) 2011-01-27 2013-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI525619B (zh) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 記憶體電路
DE112012000601T5 (de) 2011-01-28 2014-01-30 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung sowie Halbleitervorrichtung
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
WO2012102281A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
US8780614B2 (en) 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
TWI569041B (zh) 2011-02-14 2017-02-01 半導體能源研究所股份有限公司 顯示裝置
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 lsi
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5898527B2 (ja) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9646829B2 (en) 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5827145B2 (ja) 2011-03-08 2015-12-02 株式会社半導体エネルギー研究所 信号処理回路
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2012209543A (ja) 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
TWI624878B (zh) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
TWI521612B (zh) 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5933300B2 (ja) 2011-03-16 2016-06-08 株式会社半導体エネルギー研究所 半導体装置
KR101995682B1 (ko) 2011-03-18 2019-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5839474B2 (ja) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
TWI582999B (zh) 2011-03-25 2017-05-11 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
TWI545652B (zh) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102655165B (zh) 2011-03-28 2015-04-29 京东方科技集团股份有限公司 一种非晶氧化物薄膜晶体管及其制作方法、显示面板
JP6053098B2 (ja) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 半導体装置
JP5879165B2 (ja) 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
TWI567735B (zh) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 記憶體電路,記憶體單元,及訊號處理電路
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5645737B2 (ja) * 2011-04-01 2014-12-24 株式会社神戸製鋼所 薄膜トランジスタ構造および表示装置
JP5982147B2 (ja) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 発光装置
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
TWI567736B (zh) 2011-04-08 2017-01-21 半導體能源研究所股份有限公司 記憶體元件及信號處理電路
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2012256406A (ja) 2011-04-08 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置、及び当該記憶装置を用いた半導体装置
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
JP5883699B2 (ja) 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 プログラマブルlsi
JP6045176B2 (ja) 2011-04-15 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
JP5890234B2 (ja) 2011-04-15 2016-03-22 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
JP6001900B2 (ja) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 信号処理回路
TWI548057B (zh) 2011-04-22 2016-09-01 半導體能源研究所股份有限公司 半導體裝置
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8932913B2 (en) * 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8797788B2 (en) 2011-04-22 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105931967B (zh) 2011-04-27 2019-05-03 株式会社半导体能源研究所 半导体装置的制造方法
US9935622B2 (en) 2011-04-28 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Comparator and semiconductor device including comparator
KR101919056B1 (ko) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 회로
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
KR101963457B1 (ko) 2011-04-29 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치 및 그 구동 방법
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI525615B (zh) 2011-04-29 2016-03-11 半導體能源研究所股份有限公司 半導體儲存裝置
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
TWI843078B (zh) 2011-05-05 2024-05-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2012153697A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI568181B (zh) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 邏輯電路及半導體裝置
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012153473A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI541978B (zh) 2011-05-11 2016-07-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置之驅動方法
TWI557711B (zh) 2011-05-12 2016-11-11 半導體能源研究所股份有限公司 顯示裝置的驅動方法
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
US9466618B2 (en) 2011-05-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including two thin film transistors and method of manufacturing the same
US9397222B2 (en) 2011-05-13 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
WO2012157472A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5886127B2 (ja) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
JP5886128B2 (ja) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
WO2012157463A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9105749B2 (en) 2011-05-13 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101940570B1 (ko) 2011-05-13 2019-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 El 표시 장치 및 그 전자 기기
JP6013773B2 (ja) 2011-05-13 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
KR101889383B1 (ko) 2011-05-16 2018-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스
TWI570891B (zh) 2011-05-17 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
TWI552150B (zh) 2011-05-18 2016-10-01 半導體能源研究所股份有限公司 半導體儲存裝置
US9673823B2 (en) 2011-05-18 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP6014362B2 (ja) 2011-05-19 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102093909B1 (ko) 2011-05-19 2020-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 및 회로의 구동 방법
KR101991735B1 (ko) 2011-05-19 2019-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102081792B1 (ko) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산회로 및 연산회로의 구동방법
US9117920B2 (en) 2011-05-19 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
WO2012161059A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP5820335B2 (ja) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 半導体装置
JP5936908B2 (ja) 2011-05-20 2016-06-22 株式会社半導体エネルギー研究所 パリティビット出力回路およびパリティチェック回路
JP5820336B2 (ja) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 半導体装置
CN102789808B (zh) 2011-05-20 2018-03-06 株式会社半导体能源研究所 存储器装置和用于驱动存储器装置的方法
JP6091083B2 (ja) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 記憶装置
JP5951351B2 (ja) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 加算器及び全加算器
TWI557739B (zh) 2011-05-20 2016-11-11 半導體能源研究所股份有限公司 半導體積體電路
TWI573136B (zh) 2011-05-20 2017-03-01 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
JP6013680B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
JP6030334B2 (ja) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 記憶装置
TWI570730B (zh) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
TWI559683B (zh) 2011-05-20 2016-11-21 半導體能源研究所股份有限公司 半導體積體電路
JP5892852B2 (ja) 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
JP5947099B2 (ja) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
TWI570719B (zh) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
TWI614995B (zh) 2011-05-20 2018-02-11 半導體能源研究所股份有限公司 鎖相迴路及使用此鎖相迴路之半導體裝置
WO2012160963A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5886496B2 (ja) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
WO2012161003A1 (en) 2011-05-26 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Divider circuit and semiconductor device using the same
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8610482B2 (en) 2011-05-27 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Trimming circuit and method for driving trimming circuit
JP5912844B2 (ja) 2011-05-31 2016-04-27 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102064865B1 (ko) 2011-06-08 2020-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법
JP5890251B2 (ja) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 通信方法
JP2013016243A (ja) 2011-06-09 2013-01-24 Semiconductor Energy Lab Co Ltd 記憶装置
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6009226B2 (ja) 2011-06-10 2016-10-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6005401B2 (ja) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6104522B2 (ja) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 半導体装置
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TWI557910B (zh) 2011-06-16 2016-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
KR20130007426A (ko) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
SG10201505586UA (en) 2011-06-17 2015-08-28 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2013005380A1 (en) 2011-07-01 2013-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9318506B2 (en) 2011-07-08 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102014876B1 (ko) 2011-07-08 2019-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
JP2013042117A (ja) 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd 半導体装置
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6013685B2 (ja) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
KR102449610B1 (ko) 2011-07-22 2022-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
JP6006572B2 (ja) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 半導体装置
TWI575494B (zh) 2011-08-19 2017-03-21 半導體能源研究所股份有限公司 半導體裝置的驅動方法
JP6128775B2 (ja) 2011-08-19 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
JP6116149B2 (ja) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
TWI573014B (zh) 2011-08-29 2017-03-01 半導體能源研究所股份有限公司 半導體裝置
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6016532B2 (ja) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 半導体装置
JP6050054B2 (ja) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
JP5825744B2 (ja) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 パワー絶縁ゲート型電界効果トランジスタ
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103022012B (zh) 2011-09-21 2017-03-01 株式会社半导体能源研究所 半导体存储装置
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101976228B1 (ko) 2011-09-22 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광 검출 장치 및 광 검출 장치의 구동 방법
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102108572B1 (ko) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2013084333A (ja) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd シフトレジスタ回路
KR101506303B1 (ko) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
DE112012004076T5 (de) 2011-09-29 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN106847929B (zh) 2011-09-29 2020-06-23 株式会社半导体能源研究所 半导体装置
JP5806905B2 (ja) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US20130087784A1 (en) 2011-10-05 2013-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2013093561A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 酸化物半導体膜及び半導体装置
JP6022880B2 (ja) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2013093565A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
JP6026839B2 (ja) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
KR20130040706A (ko) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20140074384A (ko) 2011-10-14 2014-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20130043063A (ko) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI567985B (zh) 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6226518B2 (ja) 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
KR102067051B1 (ko) 2011-10-24 2020-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101976212B1 (ko) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6082562B2 (ja) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 半導体装置
KR20130046357A (ko) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2013061895A1 (en) 2011-10-28 2013-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102012981B1 (ko) 2011-11-09 2019-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5933895B2 (ja) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6122275B2 (ja) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
US9082861B2 (en) 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2013069548A1 (en) 2011-11-11 2013-05-16 Semiconductor Energy Laboratory Co., Ltd. Signal line driver circuit and liquid crystal display device
JP6076038B2 (ja) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US10026847B2 (en) 2011-11-18 2018-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
JP6099368B2 (ja) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 記憶装置
JP6059968B2 (ja) 2011-11-25 2017-01-11 株式会社半導体エネルギー研究所 半導体装置、及び液晶表示装置
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6125211B2 (ja) 2011-11-25 2017-05-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
TWI639150B (zh) 2011-11-30 2018-10-21 Semiconductor Energy Laboratory Co., Ltd. 半導體顯示裝置
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN103137701B (zh) 2011-11-30 2018-01-19 株式会社半导体能源研究所 晶体管及半导体装置
TWI556319B (zh) 2011-11-30 2016-11-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR102072244B1 (ko) 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI621185B (zh) 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR20140101817A (ko) 2011-12-02 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6050662B2 (ja) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2013137853A (ja) 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd 記憶装置および記憶装置の駆動方法
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
KR102084274B1 (ko) 2011-12-15 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013149953A (ja) 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2013130802A (ja) 2011-12-22 2013-07-04 Semiconductor Energy Lab Co Ltd 半導体装置、画像表示装置、記憶装置、及び電子機器
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI580189B (zh) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 位準位移電路及半導體積體電路
JP6033071B2 (ja) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 半導体装置
TWI569446B (zh) 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置
US8796683B2 (en) 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6012450B2 (ja) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6053490B2 (ja) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
KR102100425B1 (ko) 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI584383B (zh) 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102103913B1 (ko) 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8836555B2 (en) 2012-01-18 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Circuit, sensor circuit, and semiconductor device using the sensor circuit
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20130187150A1 (en) 2012-01-20 2013-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6027898B2 (ja) 2012-01-23 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102225396B1 (ko) 2012-01-25 2021-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI642193B (zh) 2012-01-26 2018-11-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6091905B2 (ja) 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
TWI561951B (en) 2012-01-30 2016-12-11 Semiconductor Energy Lab Co Ltd Power supply circuit
TWI562361B (en) 2012-02-02 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102101167B1 (ko) 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
JP5981157B2 (ja) 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 半導体装置
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20130207111A1 (en) 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
JP6125850B2 (ja) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
JP2014063557A (ja) 2012-02-24 2014-04-10 Semiconductor Energy Lab Co Ltd 記憶装置及び半導体装置
US20130221345A1 (en) 2012-02-28 2013-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9553200B2 (en) 2012-02-29 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6151530B2 (ja) 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 イメージセンサ、カメラ、及び監視システム
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013183001A (ja) 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd 半導体装置
JP6046514B2 (ja) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
US9735280B2 (en) * 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
JP6100559B2 (ja) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013133143A1 (en) 2012-03-09 2013-09-12 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
KR20140136975A (ko) 2012-03-13 2014-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 그 구동 방법
KR102108248B1 (ko) 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막, 트랜지스터, 및 반도체 장치
JP6168795B2 (ja) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
JP6169376B2 (ja) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 電池管理ユニット、保護回路、蓄電装置
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
JP2013229013A (ja) 2012-03-29 2013-11-07 Semiconductor Energy Lab Co Ltd アレイコントローラ及びストレージシステム
WO2013146154A1 (en) 2012-03-29 2013-10-03 Semiconductor Energy Laboratory Co., Ltd. Power supply control device
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
JP6139187B2 (ja) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 半導体装置
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
KR20130111873A (ko) 2012-04-02 2013-10-11 단국대학교 산학협력단 박막 트랜지스터 표시판 제조 방법
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
JP2013232885A (ja) 2012-04-06 2013-11-14 Semiconductor Energy Lab Co Ltd 半導体リレー
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US9793444B2 (en) 2012-04-06 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9711110B2 (en) 2012-04-06 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Display device comprising grayscale conversion portion and display portion
JP5975907B2 (ja) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
US9276121B2 (en) 2012-04-12 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
JP6059566B2 (ja) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6128906B2 (ja) 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
KR102932705B1 (ko) 2012-04-13 2026-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6143423B2 (ja) 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP6076612B2 (ja) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 半導体装置
JP6001308B2 (ja) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 半導体装置
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
JP6199583B2 (ja) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 半導体装置
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6228381B2 (ja) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
JP6100071B2 (ja) 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9703704B2 (en) 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8860023B2 (en) 2012-05-01 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
JP6227890B2 (ja) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 信号処理回路および制御回路
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6243136B2 (ja) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 スイッチングコンバータ
US9104395B2 (en) 2012-05-02 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Processor and driving method thereof
WO2013164958A1 (en) 2012-05-02 2013-11-07 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9261943B2 (en) 2012-05-02 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR102025722B1 (ko) 2012-05-02 2019-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 온도 센서 회로, 및 온도 센서 회로를 사용한 반도체 장치
KR20130125717A (ko) 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
DE112013002407B4 (de) 2012-05-10 2024-05-08 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
KR102069158B1 (ko) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법
KR102222438B1 (ko) 2012-05-10 2021-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
DE102013207324A1 (de) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
KR102087443B1 (ko) 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
TWI670553B (zh) 2012-05-16 2019-09-01 日商半導體能源研究所股份有限公司 半導體裝置及觸控面板
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
US9817032B2 (en) 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
KR102059218B1 (ko) 2012-05-25 2019-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스 및 반도체 장치
JP2014003594A (ja) 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
KR102164990B1 (ko) 2012-05-25 2020-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 소자의 구동 방법
JP6050721B2 (ja) 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
JP6377317B2 (ja) 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US8785928B2 (en) 2012-05-31 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
WO2013179922A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
CN107591316B (zh) 2012-05-31 2021-06-08 株式会社半导体能源研究所 半导体装置
JP6158588B2 (ja) 2012-05-31 2017-07-05 株式会社半導体エネルギー研究所 発光装置
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
US9916793B2 (en) 2012-06-01 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
US9343120B2 (en) 2012-06-01 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. High speed processing unit with non-volatile register
KR20150023547A (ko) 2012-06-01 2015-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 경보 장치
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR102113160B1 (ko) 2012-06-15 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102161077B1 (ko) 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
TWI596778B (zh) 2012-06-29 2017-08-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR20200019269A (ko) 2012-06-29 2020-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
KR102082794B1 (ko) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법, 및 표시 장치
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9190525B2 (en) 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR102099262B1 (ko) 2012-07-11 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치, 및 액정 표시 장치의 구동 방법
JP2014032399A (ja) 2012-07-13 2014-02-20 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP6006558B2 (ja) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 半導体装置及びその製造方法
KR102644240B1 (ko) 2012-07-20 2024-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP6185311B2 (ja) 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 電源制御回路、及び信号処理回路
KR20250154556A (ko) 2012-07-20 2025-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR102141977B1 (ko) 2012-07-20 2020-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
JP2014042004A (ja) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
KR20140013931A (ko) 2012-07-26 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
JP6224931B2 (ja) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
SG11201505225TA (en) 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
KR20150040873A (ko) 2012-08-03 2015-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
US10557192B2 (en) 2012-08-07 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Method for using sputtering target and method for forming oxide film
JP2014057298A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014057296A (ja) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
JP6220597B2 (ja) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
KR102099261B1 (ko) 2012-08-10 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN108305895B (zh) 2012-08-10 2021-08-03 株式会社半导体能源研究所 半导体装置及其制造方法
KR102171650B1 (ko) 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2014199899A (ja) 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 半導体装置
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI581404B (zh) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 半導體裝置以及該半導體裝置的驅動方法
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR102069683B1 (ko) 2012-08-24 2020-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치
KR20140029202A (ko) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
DE102013216824B4 (de) 2012-08-28 2024-10-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
KR102161078B1 (ko) 2012-08-28 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작 방법
TWI611511B (zh) 2012-08-31 2018-01-11 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2014034820A1 (en) 2012-09-03 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Microcontroller
DE102013217278B4 (de) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
KR102679509B1 (ko) 2012-09-13 2024-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI709244B (zh) 2012-09-24 2020-11-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6351947B2 (ja) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
TWI681233B (zh) 2012-10-12 2020-01-01 日商半導體能源研究所股份有限公司 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法
KR102226090B1 (ko) 2012-10-12 2021-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치의 제조 장치
JP6290576B2 (ja) 2012-10-12 2018-03-07 株式会社半導体エネルギー研究所 液晶表示装置及びその駆動方法
JP5951442B2 (ja) 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 半導体装置
KR102227591B1 (ko) 2012-10-17 2021-03-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6059501B2 (ja) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI591966B (zh) 2012-10-17 2017-07-11 半導體能源研究所股份有限公司 可編程邏輯裝置及可編程邏輯裝置的驅動方法
KR102102589B1 (ko) 2012-10-17 2020-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그램 가능한 논리 장치
JP6021586B2 (ja) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 半導体装置
WO2014061761A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Microcontroller and method for manufacturing the same
JP6283191B2 (ja) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
WO2014061762A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014082388A (ja) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6204145B2 (ja) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 半導体装置
US9287411B2 (en) 2012-10-24 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9865743B2 (en) 2012-10-24 2018-01-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide layer surrounding oxide semiconductor layer
TWI691084B (zh) 2012-10-24 2020-04-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102279459B1 (ko) 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
JP6219562B2 (ja) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 表示装置及び電子機器
CN104769842B (zh) 2012-11-06 2017-10-31 株式会社半导体能源研究所 半导体装置以及其驱动方法
KR102072099B1 (ko) 2012-11-08 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물 막 및 금속 산화물 막의 형성 방법
TWI605593B (zh) 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
TWI608616B (zh) 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
JP6220641B2 (ja) 2012-11-15 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
TWI613813B (zh) 2012-11-16 2018-02-01 半導體能源研究所股份有限公司 半導體裝置
JP6317059B2 (ja) 2012-11-16 2018-04-25 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP6285150B2 (ja) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 半導体装置
TWI620323B (zh) 2012-11-16 2018-04-01 半導體能源研究所股份有限公司 半導體裝置
WO2014084153A1 (en) 2012-11-28 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI627483B (zh) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
TWI662698B (zh) 2012-11-28 2019-06-11 日商半導體能源研究所股份有限公司 顯示裝置
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
TWI624949B (zh) 2012-11-30 2018-05-21 半導體能源研究所股份有限公司 半導體裝置
JP2014130336A (ja) 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd 表示装置
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
US9594281B2 (en) 2012-11-30 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2014084152A1 (en) 2012-11-30 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349593B2 (en) 2012-12-03 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102207028B1 (ko) 2012-12-03 2021-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2014135478A (ja) 2012-12-03 2014-07-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR102112364B1 (ko) 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9577446B2 (en) 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
TWI611419B (zh) 2012-12-24 2018-01-11 半導體能源研究所股份有限公司 可程式邏輯裝置及半導體裝置
KR102241249B1 (ko) 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
KR102459007B1 (ko) 2012-12-25 2022-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DE112013006219T5 (de) 2012-12-25 2015-09-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und deren Herstellungsverfahren
US9437273B2 (en) 2012-12-26 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI607510B (zh) 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP6329762B2 (ja) 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
CN104904018B (zh) 2012-12-28 2019-04-09 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014143410A (ja) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR102211596B1 (ko) 2012-12-28 2021-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI614813B (zh) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5807076B2 (ja) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6223198B2 (ja) 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
TWI619010B (zh) 2013-01-24 2018-03-21 半導體能源研究所股份有限公司 半導體裝置
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI593025B (zh) * 2013-01-30 2017-07-21 半導體能源研究所股份有限公司 氧化物半導體層的處理方法
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102112367B1 (ko) 2013-02-12 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI618252B (zh) 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102125593B1 (ko) 2013-02-13 2020-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스 및 반도체 장치
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611566B (zh) 2013-02-25 2018-01-11 Semiconductor Energy Laboratory Co., Ltd. 顯示裝置和電子裝置
US9293544B2 (en) 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI612321B (zh) 2013-02-27 2018-01-21 半導體能源研究所股份有限公司 成像裝置
TWI611567B (zh) 2013-02-27 2018-01-11 半導體能源研究所股份有限公司 半導體裝置、驅動電路及顯示裝置
KR102238682B1 (ko) 2013-02-28 2021-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
JP2014195241A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP6141777B2 (ja) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2014195243A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP2014195060A (ja) 2013-03-01 2014-10-09 Semiconductor Energy Lab Co Ltd センサ回路及びセンサ回路を用いた半導体装置
US9276125B2 (en) 2013-03-01 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102153110B1 (ko) 2013-03-06 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막 및 반도체 장치
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI644433B (zh) 2013-03-13 2018-12-11 半導體能源研究所股份有限公司 半導體裝置
JP6298662B2 (ja) 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
JP2014199708A (ja) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6283237B2 (ja) 2013-03-14 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
KR102290247B1 (ko) 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
WO2014142043A1 (en) 2013-03-14 2014-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
JP2014199709A (ja) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 記憶装置、半導体装置
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI722545B (zh) 2013-03-15 2021-03-21 日商半導體能源研究所股份有限公司 半導體裝置
US9786350B2 (en) 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
JP6355374B2 (ja) 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6093726B2 (ja) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6272713B2 (ja) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス及び半導体装置
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10347769B2 (en) 2013-03-25 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multi-layer source/drain electrodes
JP6376788B2 (ja) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP6316630B2 (ja) 2013-03-26 2018-04-25 株式会社半導体エネルギー研究所 半導体装置
US9608122B2 (en) 2013-03-27 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014209209A (ja) 2013-03-28 2014-11-06 株式会社半導体エネルギー研究所 表示装置
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
JP6300589B2 (ja) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6198434B2 (ja) 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP6224338B2 (ja) 2013-04-11 2017-11-01 株式会社半導体エネルギー研究所 半導体装置、表示装置及び半導体装置の作製方法
JP6280794B2 (ja) 2013-04-12 2018-02-14 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
TWI620324B (zh) 2013-04-12 2018-04-01 半導體能源研究所股份有限公司 半導體裝置
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6333028B2 (ja) 2013-04-19 2018-05-30 株式会社半導体エネルギー研究所 記憶装置及び半導体装置
JP6456598B2 (ja) 2013-04-19 2019-01-23 株式会社半導体エネルギー研究所 表示装置
US9893192B2 (en) 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014175296A1 (en) 2013-04-24 2014-10-30 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6396671B2 (ja) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 半導体装置
JP6401483B2 (ja) 2013-04-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI644434B (zh) 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI631711B (zh) 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 半導體裝置
KR102222344B1 (ko) 2013-05-02 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9882058B2 (en) 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105190902B (zh) 2013-05-09 2019-01-29 株式会社半导体能源研究所 半导体装置及其制造方法
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
US9704894B2 (en) 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
TWI621337B (zh) 2013-05-14 2018-04-11 半導體能源研究所股份有限公司 信號處理裝置
TWI618058B (zh) 2013-05-16 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
US9312392B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TW202535182A (zh) 2013-05-16 2025-09-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI627751B (zh) 2013-05-16 2018-06-21 半導體能源研究所股份有限公司 半導體裝置
US9172369B2 (en) 2013-05-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US10032872B2 (en) 2013-05-17 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
JP6298353B2 (ja) 2013-05-17 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
US9209795B2 (en) 2013-05-17 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Signal processing device and measuring method
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN109860278A (zh) 2013-05-20 2019-06-07 株式会社半导体能源研究所 半导体装置
US9293599B2 (en) 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI664731B (zh) 2013-05-20 2019-07-01 半導體能源研究所股份有限公司 半導體裝置
WO2014188982A1 (en) 2013-05-20 2014-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9647125B2 (en) 2013-05-20 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
DE102014208859B4 (de) 2013-05-20 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US9343579B2 (en) 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014188983A1 (en) 2013-05-21 2014-11-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and formation method thereof
US10416504B2 (en) 2013-05-21 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI624936B (zh) 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 顯示裝置
TWI649606B (zh) 2013-06-05 2019-02-01 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
JP6400336B2 (ja) 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 半導体装置
JP6374221B2 (ja) 2013-06-05 2018-08-15 株式会社半導体エネルギー研究所 半導体装置
JP2015195327A (ja) 2013-06-05 2015-11-05 株式会社半導体エネルギー研究所 半導体装置
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
US9773915B2 (en) 2013-06-11 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102282108B1 (ko) 2013-06-13 2021-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6368155B2 (ja) 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
TWI652822B (zh) 2013-06-19 2019-03-01 日商半導體能源研究所股份有限公司 氧化物半導體膜及其形成方法
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
TWI633650B (zh) 2013-06-21 2018-08-21 半導體能源研究所股份有限公司 半導體裝置
JP6357363B2 (ja) 2013-06-26 2018-07-11 株式会社半導体エネルギー研究所 記憶装置
KR102269460B1 (ko) 2013-06-27 2021-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6352070B2 (ja) 2013-07-05 2018-07-04 株式会社半導体エネルギー研究所 半導体装置
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9666697B2 (en) 2013-07-08 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device including an electron trap layer
JP6435124B2 (ja) 2013-07-08 2018-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9293480B2 (en) 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
TWI622053B (zh) 2013-07-10 2018-04-21 半導體能源研究所股份有限公司 半導體裝置
US9006736B2 (en) 2013-07-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9818763B2 (en) 2013-07-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
JP6322503B2 (ja) 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 半導体装置
JP6516978B2 (ja) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 半導体装置
TWI621130B (zh) 2013-07-18 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及用於製造半導體裝置之方法
US9379138B2 (en) 2013-07-19 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device with drive voltage dependent on external light intensity
US9395070B2 (en) 2013-07-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Support of flexible component and light-emitting device
TWI608523B (zh) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
US10529740B2 (en) 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
TWI636309B (zh) 2013-07-25 2018-09-21 日商半導體能源研究所股份有限公司 液晶顯示裝置及電子裝置
TWI632688B (zh) 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
TWI641208B (zh) 2013-07-26 2018-11-11 日商半導體能源研究所股份有限公司 直流對直流轉換器
US9343288B2 (en) 2013-07-31 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6460592B2 (ja) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 Dcdcコンバータ、及び半導体装置
JP6410496B2 (ja) 2013-07-31 2018-10-24 株式会社半導体エネルギー研究所 マルチゲート構造のトランジスタ
TWI635750B (zh) 2013-08-02 2018-09-11 半導體能源研究所股份有限公司 攝像裝置以及其工作方法
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP2015053477A (ja) 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6345023B2 (ja) 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR102304824B1 (ko) 2013-08-09 2021-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9601591B2 (en) 2013-08-09 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6329843B2 (ja) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
TWI643435B (zh) 2013-08-21 2018-12-01 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
KR102232133B1 (ko) 2013-08-22 2021-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102244553B1 (ko) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
US9443987B2 (en) 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI667520B (zh) 2013-08-28 2019-08-01 日商半導體能源研究所股份有限公司 顯示裝置
JP6426402B2 (ja) 2013-08-30 2018-11-21 株式会社半導体エネルギー研究所 表示装置
US9590109B2 (en) 2013-08-30 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9552767B2 (en) 2013-08-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
WO2015030150A1 (en) 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage circuit and semiconductor device
US9360564B2 (en) 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6406926B2 (ja) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 半導体装置
US9449853B2 (en) 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
US9607991B2 (en) 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6345544B2 (ja) 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10008513B2 (en) 2013-09-05 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6401977B2 (ja) 2013-09-06 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
KR102294507B1 (ko) 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9590110B2 (en) 2013-09-10 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Ultraviolet light sensor circuit
TWI640014B (zh) 2013-09-11 2018-11-01 半導體能源研究所股份有限公司 記憶體裝置、半導體裝置及電子裝置
US9893194B2 (en) 2013-09-12 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9269822B2 (en) 2013-09-12 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2015079946A (ja) 2013-09-13 2015-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6429540B2 (ja) 2013-09-13 2018-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9461126B2 (en) 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
CN105531621B (zh) 2013-09-13 2019-11-12 株式会社半导体能源研究所 显示装置
TWI646690B (zh) 2013-09-13 2019-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9887297B2 (en) 2013-09-17 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer in which thickness of the oxide semiconductor layer is greater than or equal to width of the oxide semiconductor layer
JP6347704B2 (ja) 2013-09-18 2018-06-27 株式会社半導体エネルギー研究所 半導体装置
US9269915B2 (en) 2013-09-18 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI677989B (zh) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9397153B2 (en) 2013-09-23 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
JP6383616B2 (ja) 2013-09-25 2018-08-29 株式会社半導体エネルギー研究所 半導体装置
US9799774B2 (en) 2013-09-26 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Switch circuit, semiconductor device, and system
JP6392603B2 (ja) 2013-09-27 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6581765B2 (ja) 2013-10-02 2019-09-25 株式会社半導体エネルギー研究所 ブートストラップ回路、およびブートストラップ回路を有する半導体装置
JP6386323B2 (ja) 2013-10-04 2018-09-05 株式会社半導体エネルギー研究所 半導体装置
TWI688102B (zh) 2013-10-10 2020-03-11 日商半導體能源研究所股份有限公司 半導體裝置
JP6438727B2 (ja) 2013-10-11 2018-12-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6591739B2 (ja) 2013-10-16 2019-10-16 株式会社半導体エネルギー研究所 演算処理装置の駆動方法
TWI621127B (zh) 2013-10-18 2018-04-11 半導體能源研究所股份有限公司 運算處理裝置及其驅動方法
TWI642170B (zh) 2013-10-18 2018-11-21 半導體能源研究所股份有限公司 顯示裝置及電子裝置
US9276128B2 (en) 2013-10-22 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and etchant used for the same
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
DE112014004839T5 (de) 2013-10-22 2016-07-07 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung
KR102244460B1 (ko) 2013-10-22 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102436895B1 (ko) 2013-10-22 2022-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
DE102014220672A1 (de) 2013-10-22 2015-05-07 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US9455349B2 (en) 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
JP6625796B2 (ja) 2013-10-25 2019-12-25 株式会社半導体エネルギー研究所 表示装置
JP6457239B2 (ja) 2013-10-31 2019-01-23 株式会社半導体エネルギー研究所 半導体装置
US9590111B2 (en) 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6478562B2 (ja) 2013-11-07 2019-03-06 株式会社半導体エネルギー研究所 半導体装置
JP6440457B2 (ja) 2013-11-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置
US9385054B2 (en) 2013-11-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing device and manufacturing method thereof
JP2015118724A (ja) 2013-11-13 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
JP6426437B2 (ja) 2013-11-22 2018-11-21 株式会社半導体エネルギー研究所 半導体装置
JP6393590B2 (ja) 2013-11-22 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6486660B2 (ja) 2013-11-27 2019-03-20 株式会社半導体エネルギー研究所 表示装置
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20150155313A1 (en) 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2016001712A (ja) 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6496132B2 (ja) 2013-12-02 2019-04-03 株式会社半導体エネルギー研究所 半導体装置
KR102462742B1 (ko) 2013-12-02 2022-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
CN110265482B (zh) 2013-12-02 2023-08-08 株式会社半导体能源研究所 显示装置
US9991392B2 (en) 2013-12-03 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016027597A (ja) 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6537264B2 (ja) 2013-12-12 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
TWI642186B (zh) 2013-12-18 2018-11-21 日商半導體能源研究所股份有限公司 半導體裝置
TWI666770B (zh) 2013-12-19 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置
US9379192B2 (en) 2013-12-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6444714B2 (ja) 2013-12-20 2018-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2015097586A1 (en) 2013-12-25 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015097596A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6402017B2 (ja) 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
US9960280B2 (en) 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20240042562A (ko) 2013-12-26 2024-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI637484B (zh) 2013-12-26 2018-10-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
KR102529174B1 (ko) 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9318618B2 (en) 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20250119662A (ko) 2013-12-27 2025-08-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6506961B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 液晶表示装置
JP6488124B2 (ja) 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
JP6444723B2 (ja) 2014-01-09 2018-12-26 株式会社半導体エネルギー研究所 装置
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
US9401432B2 (en) 2014-01-16 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9379713B2 (en) 2014-01-17 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Data processing device and driving method thereof
KR102306200B1 (ko) 2014-01-24 2021-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2015114476A1 (en) 2014-01-28 2015-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9929044B2 (en) 2014-01-30 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI665778B (zh) 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
US9653487B2 (en) 2014-02-05 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, module, and electronic device
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
US9929279B2 (en) 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9721968B2 (en) 2014-02-06 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic appliance
US9479175B2 (en) 2014-02-07 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2015118436A1 (en) 2014-02-07 2015-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, device, and electronic device
US9869716B2 (en) 2014-02-07 2018-01-16 Semiconductor Energy Laboratory Co., Ltd. Device comprising programmable logic element
US10055232B2 (en) 2014-02-07 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising memory circuit
JP2015165226A (ja) 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 装置
TWI658597B (zh) 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI803431B (zh) 2014-02-11 2023-05-21 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
KR102317297B1 (ko) 2014-02-19 2021-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물, 반도체 장치, 모듈, 및 전자 장치
US9817040B2 (en) 2014-02-21 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measuring method of low off-state current of transistor
JP2015172991A (ja) 2014-02-21 2015-10-01 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
TWI702187B (zh) 2014-02-21 2020-08-21 日商半導體能源研究所股份有限公司 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置
KR102329066B1 (ko) 2014-02-28 2021-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법, 및 전자 기기
US10074576B2 (en) 2014-02-28 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2015128774A1 (en) 2014-02-28 2015-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9294096B2 (en) 2014-02-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9564535B2 (en) 2014-02-28 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
KR20150104518A (ko) 2014-03-05 2015-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레벨 시프터 회로
JP6474280B2 (ja) 2014-03-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
US10096489B2 (en) 2014-03-06 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9397637B2 (en) 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
JP6625328B2 (ja) 2014-03-06 2019-12-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9537478B2 (en) 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443872B2 (en) 2014-03-07 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015132694A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
JP6442321B2 (ja) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9419622B2 (en) 2014-03-07 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015132697A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9711536B2 (en) 2014-03-07 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6585354B2 (ja) 2014-03-07 2019-10-02 株式会社半導体エネルギー研究所 半導体装置
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
KR20160132405A (ko) 2014-03-12 2016-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6525421B2 (ja) 2014-03-13 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
JP6560508B2 (ja) 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
JP6541376B2 (ja) 2014-03-13 2019-07-10 株式会社半導体エネルギー研究所 プログラマブルロジックデバイスの動作方法
JP6677449B2 (ja) 2014-03-13 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9324747B2 (en) 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
KR102450562B1 (ko) 2014-03-13 2022-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
US9640669B2 (en) 2014-03-13 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
US9887212B2 (en) 2014-03-14 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102252213B1 (ko) 2014-03-14 2021-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 시스템
US10361290B2 (en) 2014-03-14 2019-07-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film
JP2015188071A (ja) 2014-03-14 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
US9299848B2 (en) 2014-03-14 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RF tag, and electronic device
JP6509596B2 (ja) 2014-03-18 2019-05-08 株式会社半導体エネルギー研究所 半導体装置
SG11201606536XA (en) 2014-03-18 2016-09-29 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
US9887291B2 (en) 2014-03-19 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module
US9842842B2 (en) 2014-03-19 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device and electronic device having the same
TWI657488B (zh) 2014-03-20 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置
JP6495698B2 (ja) 2014-03-20 2019-04-03 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
CN111048509B (zh) 2014-03-28 2023-12-01 株式会社半导体能源研究所 半导体装置
JP6487738B2 (ja) 2014-03-31 2019-03-20 株式会社半導体エネルギー研究所 半導体装置、電子部品
TWI767772B (zh) 2014-04-10 2022-06-11 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
US9674470B2 (en) 2014-04-11 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and method for driving electronic device
JP6541398B2 (ja) 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
TWI646782B (zh) 2014-04-11 2019-01-01 日商半導體能源研究所股份有限公司 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置
JP6635670B2 (ja) 2014-04-11 2020-01-29 株式会社半導体エネルギー研究所 半導体装置
KR102511325B1 (ko) 2014-04-18 2023-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 동작 방법
WO2015159179A1 (en) 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9768315B2 (en) 2014-04-18 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device having the same
JP6613044B2 (ja) 2014-04-22 2019-11-27 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
KR102380829B1 (ko) 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
KR102330412B1 (ko) 2014-04-25 2021-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
JP6468686B2 (ja) 2014-04-25 2019-02-13 株式会社半導体エネルギー研究所 入出力装置
US9780226B2 (en) 2014-04-25 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI643457B (zh) 2014-04-25 2018-12-01 日商半導體能源研究所股份有限公司 半導體裝置
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
US10656799B2 (en) 2014-05-02 2020-05-19 Semiconductor Energy Laboratory Co., Ltd. Display device and operation method thereof
TWI679624B (zh) 2014-05-02 2019-12-11 日商半導體能源研究所股份有限公司 半導體裝置
JP6537341B2 (ja) 2014-05-07 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
JP6653997B2 (ja) 2014-05-09 2020-02-26 株式会社半導体エネルギー研究所 表示補正回路及び表示装置
KR102333604B1 (ko) 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
JP2015233130A (ja) 2014-05-16 2015-12-24 株式会社半導体エネルギー研究所 半導体基板および半導体装置の作製方法
JP6612056B2 (ja) 2014-05-16 2019-11-27 株式会社半導体エネルギー研究所 撮像装置、及び監視装置
JP6580863B2 (ja) 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
JP6616102B2 (ja) 2014-05-23 2019-12-04 株式会社半導体エネルギー研究所 記憶装置及び電子機器
TWI672804B (zh) 2014-05-23 2019-09-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置的製造方法
KR20170003674A (ko) * 2014-05-27 2017-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US10020403B2 (en) 2014-05-27 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9874775B2 (en) 2014-05-28 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP6525722B2 (ja) 2014-05-29 2019-06-05 株式会社半導体エネルギー研究所 記憶装置、電子部品、及び電子機器
KR20150138026A (ko) 2014-05-29 2015-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102418666B1 (ko) 2014-05-29 2022-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 소자, 전자 기기, 촬상 소자의 구동 방법, 및 전자 기기의 구동 방법
JP6615490B2 (ja) 2014-05-29 2019-12-04 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP6653129B2 (ja) 2014-05-29 2020-02-26 株式会社半導体エネルギー研究所 記憶装置
TWI646658B (zh) 2014-05-30 2019-01-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
JP6538426B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
KR102760229B1 (ko) 2014-05-30 2025-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이의 제조 방법, 및 전자 장치
US9831238B2 (en) 2014-05-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating film having opening portion and conductive film in the opening portion
KR102373263B1 (ko) 2014-05-30 2022-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 제조하기 위한 방법
JP6537892B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP2016015475A (ja) 2014-06-13 2016-01-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
KR102437450B1 (ko) 2014-06-13 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치를 포함하는 전자 기기
KR102344782B1 (ko) 2014-06-13 2021-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 입력 장치 및 입출력 장치
TWI663733B (zh) 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
TWI666776B (zh) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
KR20150146409A (ko) 2014-06-20 2015-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기
US9722090B2 (en) 2014-06-23 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first gate oxide semiconductor film, and second gate
JP6545541B2 (ja) 2014-06-25 2019-07-17 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
US10002971B2 (en) 2014-07-03 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9647129B2 (en) 2014-07-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9461179B2 (en) 2014-07-11 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
US9729809B2 (en) 2014-07-11 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device or electronic device
CN112038410A (zh) 2014-07-15 2020-12-04 株式会社半导体能源研究所 半导体装置及其制造方法以及包括半导体装置的显示装置
JP6581825B2 (ja) 2014-07-18 2019-09-25 株式会社半導体エネルギー研究所 表示システム
KR102422059B1 (ko) 2014-07-18 2022-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 촬상 장치, 및 전자 기기
KR102352633B1 (ko) 2014-07-25 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발진 회로 및 그것을 포함하는 반도체 장치
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6527416B2 (ja) 2014-07-29 2019-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6555956B2 (ja) 2014-07-31 2019-08-07 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
KR102380645B1 (ko) 2014-07-31 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 장치
US9705004B2 (en) 2014-08-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE102014111140B4 (de) * 2014-08-05 2019-08-14 Infineon Technologies Austria Ag Halbleitervorrichtung mit Feldeffektstrukturen mit verschiedenen Gatematerialien und Verfahren zur Herstellung davon
JP6652342B2 (ja) 2014-08-08 2020-02-19 株式会社半導体エネルギー研究所 半導体装置
JP6553444B2 (ja) 2014-08-08 2019-07-31 株式会社半導体エネルギー研究所 半導体装置
JP6739150B2 (ja) 2014-08-08 2020-08-12 株式会社半導体エネルギー研究所 半導体装置、発振回路、位相同期回路及び電子機器
US10147747B2 (en) 2014-08-21 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US10032888B2 (en) 2014-08-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device
US10559667B2 (en) 2014-08-25 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for measuring current of semiconductor device
KR102509203B1 (ko) 2014-08-29 2023-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
KR102441803B1 (ko) 2014-09-02 2022-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
KR102329498B1 (ko) 2014-09-04 2021-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9766517B2 (en) 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
JP2016066065A (ja) 2014-09-05 2016-04-28 株式会社半導体エネルギー研究所 表示装置、および電子機器
JP6676316B2 (ja) 2014-09-12 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9722091B2 (en) 2014-09-12 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20160034200A (ko) 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2016066788A (ja) 2014-09-19 2016-04-28 株式会社半導体エネルギー研究所 半導体膜の評価方法および半導体装置の作製方法
US9401364B2 (en) 2014-09-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
DE112015004272T5 (de) 2014-09-19 2017-06-01 Semiconductor Energy Laboratory Co., Ltd. Herstellungsverfahren der Halbleitervorrichtung
US10071904B2 (en) 2014-09-25 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
WO2016046685A1 (en) 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6633330B2 (ja) 2014-09-26 2020-01-22 株式会社半導体エネルギー研究所 半導体装置
US10170055B2 (en) 2014-09-26 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP2016111677A (ja) 2014-09-26 2016-06-20 株式会社半導体エネルギー研究所 半導体装置、無線センサ、及び電子機器
US9450581B2 (en) 2014-09-30 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
KR20170068511A (ko) 2014-10-06 2017-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9698170B2 (en) 2014-10-07 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
WO2016055903A1 (en) 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
KR20240161234A (ko) 2014-10-10 2024-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로, 처리 유닛, 전자 부품, 전자 기기, 및 반도체 장치
US9991393B2 (en) 2014-10-16 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module, and electronic device
JP6645793B2 (ja) 2014-10-17 2020-02-14 株式会社半導体エネルギー研究所 半導体装置
WO2016063159A1 (en) 2014-10-20 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof, module, and electronic device
US10068927B2 (en) 2014-10-23 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP6615565B2 (ja) 2014-10-24 2019-12-04 株式会社半導体エネルギー研究所 半導体装置
CN113540130A (zh) 2014-10-28 2021-10-22 株式会社半导体能源研究所 显示装置、显示装置的制造方法及电子设备
TWI652362B (zh) 2014-10-28 2019-03-01 日商半導體能源研究所股份有限公司 氧化物及其製造方法
US9704704B2 (en) 2014-10-28 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP6780927B2 (ja) 2014-10-31 2020-11-04 株式会社半導体エネルギー研究所 半導体装置
US10680017B2 (en) 2014-11-07 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
US9584707B2 (en) 2014-11-10 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9548327B2 (en) 2014-11-10 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device having a selenium containing photoelectric conversion layer
TWI711165B (zh) 2014-11-21 2020-11-21 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
JP6563313B2 (ja) 2014-11-21 2019-08-21 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US9438234B2 (en) 2014-11-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device including logic circuit
TWI766298B (zh) 2014-11-21 2022-06-01 日商半導體能源研究所股份有限公司 半導體裝置
KR20210039507A (ko) 2014-11-28 2021-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
JP6647841B2 (ja) 2014-12-01 2020-02-14 株式会社半導体エネルギー研究所 酸化物の作製方法
US20160155849A1 (en) 2014-12-02 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
US9768317B2 (en) 2014-12-08 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of semiconductor device, and electronic device
JP6667267B2 (ja) 2014-12-08 2020-03-18 株式会社半導体エネルギー研究所 半導体装置
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6833315B2 (ja) 2014-12-10 2021-02-24 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
CN113793872A (zh) 2014-12-10 2021-12-14 株式会社半导体能源研究所 半导体装置及其制造方法
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
JP6676354B2 (ja) 2014-12-16 2020-04-08 株式会社半導体エネルギー研究所 半導体装置
JP2016116220A (ja) 2014-12-16 2016-06-23 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
TWI791952B (zh) 2014-12-18 2023-02-11 日商半導體能源研究所股份有限公司 半導體裝置、感測裝置和電子裝置
TWI686874B (zh) 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
US10396210B2 (en) 2014-12-26 2019-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device
KR20170101233A (ko) 2014-12-26 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃의 제작 방법
CN107111985B (zh) 2014-12-29 2020-09-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US9443564B2 (en) 2015-01-26 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6857447B2 (ja) 2015-01-26 2021-04-14 株式会社半導体エネルギー研究所 半導体装置
TWI792065B (zh) 2015-01-30 2023-02-11 日商半導體能源研究所股份有限公司 成像裝置及電子裝置
US9647132B2 (en) 2015-01-30 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
CN107207252B (zh) 2015-02-02 2021-04-30 株式会社半导体能源研究所 氧化物及其制造方法
CN112436021B (zh) 2015-02-04 2025-06-06 株式会社半导体能源研究所 半导体装置的制造方法
US9660100B2 (en) 2015-02-06 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI732383B (zh) 2015-02-06 2021-07-01 日商半導體能源研究所股份有限公司 裝置及其製造方法以及電子裝置
JP6717604B2 (ja) 2015-02-09 2020-07-01 株式会社半導体エネルギー研究所 半導体装置、中央処理装置及び電子機器
JP6674269B2 (ja) 2015-02-09 2020-04-01 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
WO2016128859A1 (en) 2015-02-11 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016154225A (ja) 2015-02-12 2016-08-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9818880B2 (en) 2015-02-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
WO2016128854A1 (en) 2015-02-12 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP6758844B2 (ja) 2015-02-13 2020-09-23 株式会社半導体エネルギー研究所 表示装置
US10403646B2 (en) 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9991394B2 (en) 2015-02-20 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US9489988B2 (en) 2015-02-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP6711642B2 (ja) 2015-02-25 2020-06-17 株式会社半導体エネルギー研究所 半導体装置
JP6739185B2 (ja) 2015-02-26 2020-08-12 株式会社半導体エネルギー研究所 ストレージシステム、およびストレージ制御回路
US9653613B2 (en) 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9685560B2 (en) 2015-03-02 2017-06-20 Semiconductor Energy Laboratory Co., Ltd. Transistor, method for manufacturing transistor, semiconductor device, and electronic device
TWI718125B (zh) 2015-03-03 2021-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2016139560A1 (en) 2015-03-03 2016-09-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device including the oxide semiconductor film, and display device including the semiconductor device
DE112016001033T5 (de) 2015-03-03 2017-12-21 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Verfahren zum Herstellen derselben oder Anzeigevorrichtung mit derselben
CN106033731B (zh) * 2015-03-13 2019-11-05 联华电子股份有限公司 半导体元件及其制作方法
US9905700B2 (en) 2015-03-13 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or memory device and driving method thereof
CN114546158A (zh) 2015-03-17 2022-05-27 株式会社半导体能源研究所 触摸屏
US10008609B2 (en) 2015-03-17 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
US9964799B2 (en) 2015-03-17 2018-05-08 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
US9882061B2 (en) 2015-03-17 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016177280A (ja) 2015-03-18 2016-10-06 株式会社半導体エネルギー研究所 表示装置および電子機器、並びに表示装置の駆動方法
JP6662665B2 (ja) 2015-03-19 2020-03-11 株式会社半導体エネルギー研究所 液晶表示装置及び該液晶表示装置を用いた電子機器
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US10147823B2 (en) 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9634048B2 (en) 2015-03-24 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9842938B2 (en) 2015-03-24 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including semiconductor device
US10429704B2 (en) 2015-03-26 2019-10-01 Semiconductor Energy Laboratory Co., Ltd. Display device, display module including the display device, and electronic device including the display device or the display module
US10096715B2 (en) 2015-03-26 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and electronic device
TWI695513B (zh) 2015-03-27 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6736321B2 (ja) 2015-03-27 2020-08-05 株式会社半導体エネルギー研究所 半導体装置の製造方法
TWI777164B (zh) 2015-03-30 2022-09-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US9716852B2 (en) 2015-04-03 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Broadcast system
US10389961B2 (en) 2015-04-09 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR102788207B1 (ko) 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10372274B2 (en) 2015-04-13 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
US10056497B2 (en) 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016206659A (ja) 2015-04-16 2016-12-08 株式会社半導体エネルギー研究所 表示装置および電子機器、並びに表示装置の駆動方法
US10192995B2 (en) 2015-04-28 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10002970B2 (en) 2015-04-30 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of the same, or display device including the same
US10671204B2 (en) 2015-05-04 2020-06-02 Semiconductor Energy Laboratory Co., Ltd. Touch panel and data processor
KR102549926B1 (ko) 2015-05-04 2023-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기
JP6681780B2 (ja) 2015-05-07 2020-04-15 株式会社半導体エネルギー研究所 表示システムおよび電子機器
TWI693719B (zh) 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
DE102016207737A1 (de) 2015-05-11 2016-11-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Verfahren zum Herstellen der Halbleitervorrichtung, Reifen und beweglicher Gegenstand
US11728356B2 (en) 2015-05-14 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
JP6935171B2 (ja) 2015-05-14 2021-09-15 株式会社半導体エネルギー研究所 半導体装置
US9627034B2 (en) 2015-05-15 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US9837547B2 (en) 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
KR20180010205A (ko) 2015-05-22 2018-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
JP2016225614A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置
JP6773453B2 (ja) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
US10139663B2 (en) 2015-05-29 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Input/output device and electronic device
KR102553553B1 (ko) 2015-06-12 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 및 그 동작 방법 및 전자 기기
WO2016203354A1 (en) 2015-06-19 2016-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US9860465B2 (en) 2015-06-23 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9935633B2 (en) 2015-06-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
US10290573B2 (en) 2015-07-02 2019-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9917209B2 (en) 2015-07-03 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including step of forming trench over semiconductor
WO2017006207A1 (en) 2015-07-08 2017-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2017022377A (ja) 2015-07-14 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
US10501003B2 (en) 2015-07-17 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, lighting device, and vehicle
US10985278B2 (en) 2015-07-21 2021-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US11189736B2 (en) 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11024725B2 (en) 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
US10978489B2 (en) 2015-07-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
CN106409919A (zh) 2015-07-30 2017-02-15 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US10585506B2 (en) 2015-07-30 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device with high visibility regardless of illuminance of external light
US9825177B2 (en) 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
KR102513517B1 (ko) 2015-07-30 2023-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP6725357B2 (ja) 2015-08-03 2020-07-15 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
US9876946B2 (en) 2015-08-03 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
JP6791661B2 (ja) 2015-08-07 2020-11-25 株式会社半導体エネルギー研究所 表示パネル
WO2017029576A1 (en) 2015-08-19 2017-02-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9666606B2 (en) 2015-08-21 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2017041877A (ja) 2015-08-21 2017-02-23 株式会社半導体エネルギー研究所 半導体装置、電子部品、および電子機器
US9773919B2 (en) 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017037564A1 (en) 2015-08-28 2017-03-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, transistor, and semiconductor device
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
JP2017050537A (ja) 2015-08-31 2017-03-09 株式会社半導体エネルギー研究所 半導体装置
JP6807683B2 (ja) 2015-09-11 2021-01-06 株式会社半導体エネルギー研究所 入出力パネル
SG10201607278TA (en) 2015-09-18 2017-04-27 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic device
JP2017063420A (ja) 2015-09-25 2017-03-30 株式会社半導体エネルギー研究所 半導体装置
KR20180063084A (ko) 2015-09-30 2018-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2017064587A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processor, and method for manufacturing display panel
WO2017064590A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9852926B2 (en) 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
DE112016000146T5 (de) 2015-10-23 2017-07-06 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronische Vorrichtung
US20170118479A1 (en) 2015-10-23 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10007161B2 (en) 2015-10-26 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Display device
SG10201608814YA (en) 2015-10-29 2017-05-30 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the semiconductor device
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
US9741400B2 (en) 2015-11-05 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
JP6796461B2 (ja) 2015-11-18 2020-12-09 株式会社半導体エネルギー研究所 半導体装置、コンピュータ及び電子機器
JP6887243B2 (ja) 2015-12-11 2021-06-16 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、電子機器及び半導ウエハ
JP2018032839A (ja) 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 トランジスタ、回路、半導体装置、表示装置および電子機器
JP2017112374A (ja) 2015-12-16 2017-06-22 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器
CN108475491B (zh) 2015-12-18 2021-04-20 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US10177142B2 (en) 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
CN114361180B (zh) 2015-12-28 2026-03-10 株式会社半导体能源研究所 半导体装置、包括该半导体装置的显示装置
WO2017115222A1 (en) 2015-12-29 2017-07-06 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and semiconductor device
JP2017135698A (ja) 2015-12-29 2017-08-03 株式会社半導体エネルギー研究所 半導体装置、コンピュータ及び電子機器
JP6851814B2 (ja) 2015-12-29 2021-03-31 株式会社半導体エネルギー研究所 トランジスタ
JP6827328B2 (ja) 2016-01-15 2021-02-10 株式会社半導体エネルギー研究所 半導体装置及び電子機器
KR102527306B1 (ko) 2016-01-18 2023-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물막, 반도체 장치, 및 표시 장치
US9905657B2 (en) 2016-01-20 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6822853B2 (ja) 2016-01-21 2021-01-27 株式会社半導体エネルギー研究所 記憶装置及び記憶装置の駆動方法
US10411013B2 (en) 2016-01-22 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US10700212B2 (en) 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof
US10115741B2 (en) 2016-02-05 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10250247B2 (en) 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
WO2017137869A1 (en) 2016-02-12 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6970511B2 (ja) 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
KR20170096956A (ko) 2016-02-17 2017-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기
US10263114B2 (en) 2016-03-04 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
WO2017149413A1 (en) 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102734238B1 (ko) 2016-03-04 2024-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 그 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
JP6904730B2 (ja) 2016-03-08 2021-07-21 株式会社半導体エネルギー研究所 撮像装置
US9882064B2 (en) 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10096720B2 (en) 2016-03-25 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
JP6668455B2 (ja) 2016-04-01 2020-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
WO2017178923A1 (en) 2016-04-15 2017-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US10236875B2 (en) 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
WO2017199130A1 (en) 2016-05-19 2017-11-23 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and transistor
WO2017208119A1 (en) 2016-06-03 2017-12-07 Semiconductor Energy Laboratory Co., Ltd. Metal oxide and field-effect transistor
KR102330605B1 (ko) 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10411003B2 (en) 2016-10-14 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN108109592B (zh) 2016-11-25 2022-01-25 株式会社半导体能源研究所 显示装置及其工作方法
WO2019025893A1 (ja) 2017-07-31 2019-02-07 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP6782211B2 (ja) * 2017-09-08 2020-11-11 株式会社東芝 透明電極、それを用いた素子、および素子の製造方法
JP2019105818A (ja) * 2017-12-13 2019-06-27 芳徳 伊丹 鏡の製造方法
WO2019175704A1 (ja) 2018-03-16 2019-09-19 株式会社半導体エネルギー研究所 電気モジュール、表示パネル、表示装置、入出力装置、情報処理装置、電気モジュールの作製方法
US11610998B2 (en) 2018-07-09 2023-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11990778B2 (en) 2018-07-10 2024-05-21 Semiconductor Energy Laboratory Co., Ltd. Secondary battery protection circuit and secondary battery anomaly detection system
US12237389B2 (en) 2018-11-02 2025-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN113169382B (zh) 2018-11-22 2024-09-24 株式会社半导体能源研究所 半导体装置及电池组
WO2020128743A1 (ja) 2018-12-20 2020-06-25 株式会社半導体エネルギー研究所 半導体装置および電池パック
JP7528063B2 (ja) 2019-04-26 2024-08-05 株式会社半導体エネルギー研究所 半導体装置および電子機器
CN113711295A (zh) 2019-05-10 2021-11-26 株式会社半导体能源研究所 显示装置以及电子设备
WO2020240331A1 (ja) 2019-05-31 2020-12-03 株式会社半導体エネルギー研究所 半導体装置、および当該半導体装置を備えた無線通信装置
CN112990111B (zh) * 2021-04-20 2021-08-31 北京英视睿达科技有限公司 臭氧生成高值区的识别方法、装置、存储介质及设备

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3406959B2 (ja) * 1992-10-16 2003-05-19 キヤノン株式会社 マイクロ波プラズマcvd法による堆積膜形成方法
JP3066944B2 (ja) * 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
US5635408A (en) * 1994-04-28 1997-06-03 Canon Kabushiki Kaisha Method of producing a semiconductor device
JP3573363B2 (ja) 1994-07-14 2004-10-06 キヤノン株式会社 薄膜半導体太陽電池の製造方法
US6379994B1 (en) * 1995-09-25 2002-04-30 Canon Kabushiki Kaisha Method for manufacturing photovoltaic element
US6555394B2 (en) * 1995-11-28 2003-04-29 Samsung Electronics Co., Ltd. Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure
JP4170454B2 (ja) 1998-07-24 2008-10-22 Hoya株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
US6492241B1 (en) * 2000-04-10 2002-12-10 Micron Technology, Inc. Integrated capacitors fabricated with conductive metal oxides
JP2002289859A (ja) * 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
TW541723B (en) * 2001-04-27 2003-07-11 Shinetsu Handotai Kk Method for manufacturing light-emitting element
JP2003037268A (ja) * 2001-07-24 2003-02-07 Minolta Co Ltd 半導体素子及びその製造方法
KR100425463B1 (ko) * 2001-09-10 2004-03-30 삼성전자주식회사 산소를 함유하는 활성화된 기체 분위기에서의 탄탈륨산화막 형성 방법 및 유전막 형성 방법
EP1452619B1 (en) * 2001-10-02 2011-09-14 National Institute of Advanced Industrial Science and Technology Process for producing a thin metal oxide film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP2003298062A (ja) 2002-03-29 2003-10-17 Sharp Corp 薄膜トランジスタ及びその製造方法
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7189992B2 (en) * 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
WO2003098699A1 (fr) 2002-05-22 2003-11-27 Sharp Kabushiki Kaisha Dispositif semiconducteur et afficheur comprenant ce dispositif
CN1978586A (zh) * 2002-11-12 2007-06-13 出光兴产株式会社 用于有机电致发光器件的材料和使用该材料的有机电致发光器件
JP4744059B2 (ja) * 2002-11-22 2011-08-10 シャープ株式会社 半導体薄膜、半導体薄膜の形成方法、半導体装置およびディスプレイ装置。
KR100450685B1 (ko) * 2002-11-30 2004-10-01 삼성전자주식회사 유전막 공정을 단순화하여 반도체 소자의 커패시터를제조하는 방법과 그 유전막을 형성하는 장치
WO2004074556A2 (ja) * 2003-02-24 2004-09-02 Waseda University β‐Ga2O3系単結晶成長方法、薄膜単結晶の成長方法、Ga2O3系発光素子およびその製造方法
JP4166105B2 (ja) * 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
US8314420B2 (en) 2004-03-12 2012-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device with multiple component oxide channel
US7642573B2 (en) 2004-03-12 2010-01-05 Hewlett-Packard Development Company, L.P. Semiconductor device
US7250627B2 (en) 2004-03-12 2007-07-31 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
KR20070116888A (ko) 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7242039B2 (en) 2004-03-12 2007-07-10 Hewlett-Packard Development Company, L.P. Semiconductor device
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7427776B2 (en) * 2004-10-07 2008-09-23 Hewlett-Packard Development Company, L.P. Thin-film transistor and methods
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
EP2453481B1 (en) 2004-11-10 2017-01-11 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
CA2585063C (en) 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
BRPI0517560B8 (pt) 2004-11-10 2018-12-11 Canon Kk transistor de efeito de campo

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