CN101023529B - 形成溶液处理器件的方法 - Google Patents

形成溶液处理器件的方法 Download PDF

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CN101023529B
CN101023529B CN2005800314281A CN200580031428A CN101023529B CN 101023529 B CN101023529 B CN 101023529B CN 2005800314281 A CN2005800314281 A CN 2005800314281A CN 200580031428 A CN200580031428 A CN 200580031428A CN 101023529 B CN101023529 B CN 101023529B
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layer
solution
material layer
oxide
organic
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CN101023529A (zh
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P·马迪洛维奇
R·霍夫曼
G·S·赫尔曼
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Hewlett Packard Development Co LP
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Abstract

一种方法，包括借助于一种或者多种溶液处理工艺，在衬底(102)的至少一部分上沉积(142)第一材料，以形成第一材料层(108)，所述第一材料层(108)的至少一部分包括无机介电材料；借助于一种或者多种溶液处理工艺，在所述第一材料层(108)的所述至少一部分上和/或与所述第一材料层(108)的所述至少一部分接触地沉积(146)第二材料，以形成第二材料层(108)，所述第二材料层(108)的至少一部分包括有机介电材料，以形成介电器件层的至少一部分；和至少部分地改变所述第一和/或所述第二材料层(108)的至少一部分。

Description

形成溶液处理器件的方法
背景技术
诸如集成电路、太阳能电池和/或电子显示器之类的电子器件可以由一个或者多个电子器件，例如一个或者多个薄膜晶体管(TFT)构成。用于形成例如上述这些的电子器件的方法和/或材料可能变化，并且这些方法和/或材料的一种或者多种可能具有特定的缺陷。例如，这些方法和/或材料的使用可能是耗时的和/或是昂贵的，可能包括利用高温处理，和/或不能制造出具有所需特性的器件。
附图的简要说明
在说明书的结尾部分特别指出和清楚地要求了保护的主题。然而，当阅读附图时参考下面的具体描述，可以最好地理解要求保护的主题、操作机构和方法以及目标、特征及其优点，其中：
图1是溶液处理器件的一个实施例的横截面图；
图2是溶液处理器件的一个实施例的平面图；
图3是示出了形成溶液处理器件的方法的一个实施例的流程；以及
图4示出了溶液处理器件例如图1和/或图2所示的器件的实施例的一个或者多个特性。
具体描述
在下述的具体描述中，列出了多个特定细节以提供对所要求保护主题的全面理解。然而，本领域技术人员将理解的是，可以不用这些特定的细节实施所要求保护的主题。在其它实例中，没有具体描述公知的方法、程序、部件和/或电路，以便不混淆所要求保护的主题。
电子器件，例如半导体器件、显示器件、纳米技术器件、导电器件和/或电介质器件可以包括一个或者多个薄膜，其可以另外被称作器件层，一个或者多个器件层可以包括一个或者多个材料层，例如称做材料层。在本文中，术语薄膜指的是形成一定厚度的一种或者多种材料层，使得可以观测到一种或者多种材料的表面特性，并且，例如这些特性可以不同于大块材料的特性。一个或者多个器件层可以另外包括一个或者多个材料层，以及包括材料层的一种或者多种材料可以具有电和/或化学特性，例如导电性、化学界面特性、电荷流动和/或加工性能。可以另外构图一个或者多个材料层，并且结合一个或者多个其它材料层，可以形成一个或者多个器件层，其中结合一个或者多个其它器件层可以形成一个或者多个电子器件，例如薄膜晶体管(TFT)、电容器、二极管、电阻器、光生伏特电池、绝缘体、导体、旋光器件等等。薄膜器件，例如尤其是TFT，可以应用于例如包括电致发光的显示器件中和/或液晶显示器(LCD)中。
至少作为电子器件的制造工艺的一部分，例如包括薄膜晶体管的薄膜器件，可以形成一个或者多个材料层至少作为一个或者多个器件层的一部分，例如通过形成介电层作为薄膜晶体管的一部分，其中介电层包括例如多个材料层。在该实施例中，作为制造工艺的至少一部分，可以借助于一个或者多个形成工艺和/或借助于一种或者多种材料，例如材料的组合，形成一个或者多个材料层。在一个特定的实施例中，借助于一个或者多个工艺可以形成器件的至少一部分，例如薄膜器件，例如其中的至少一个工艺可以被称作溶液处理工艺。在本文中使用的溶液处理工艺包括一个或者多个工艺，其中在至少一个实施例中可以另外被称作液体前驱体的溶液，例如基本上是液体溶液，可以沉积在器件的一个或者多个表面上，例如借助于一个或者多个沉积工艺沉积在衬底的一个或者多个表面上。至少可以通过一个或者多个工艺例如溶液处理工艺部分地形成的器件，例如包括TFT的电子器件可以被称作溶液处理器件。在溶液处理工艺的一个实施例中，喷射机构，例如喷墨器件可以在表面上沉积和/或喷出一种或者多种材料，以便于主要形成材料层。另外，可以在溶液处理工艺的一个或者多个实施例中使用一种或者更多种旋涂工艺和/或一种或者更多种接触印刷工艺，其中一个或者多个印刷器件能够将材料例如液体材料印刷到表面上，但是这些只是几个实例，要求保护的主题不局限于此。例如，可以在溶液处理工艺的一个或者多个实施例中使用一种或者更多种浸涂和/或喷涂工艺、一种或者更多种幕帘涂布、丝网印刷、化学浴槽沉积工艺和/或连续离子层吸收和反应工艺。另外，如这里使用的喷射器件，例如包括喷墨器件的喷出器件可以包括能够喷射材料例如墨水的机构，并可以例如机械地和/或电子地和/或响应电信号喷射例如液滴形式的材料，并可以能够例如以可控的部分、以可控的方式和/或在可控的方向喷射材料。另外，喷射器件可以借助于一个或者多个喷射方案运行，例如包括压电喷射、热喷射和/或弯曲拉紧喷射，但是，同样地，要求保护的主题不局限于这些实例。
尽管要求保护的主题不局限于此，但是在一个特定实施例中，电子器件例如薄膜器件可以包括至少一个器件层，其中至少一个器件层包括两层或者更多层材料，例如不同材料和/或具有不同特性的材料。在至少一个实施例中，器件的至少一部分例如可以是导电的和/或绝缘的，并且在至少一个实施例中，例如，至少一个材料层可以主要包括无机材料，并且至少一个材料层可以主要包括有机材料。当然，可理解的是，要求保护的主题不局限于材料是无机的和材料是有机的范围中。例如，无机材料可以存在于有机材料上或者上方，反之亦然。同样，在一些实施例中，至少部分根据特定实施例，还可以包括附加材料层。而且，如这里所使用的导电，例如与导电器件层一起使用时，通常指的是至少部分地导电的能力，并可以包括导电的、半导电的和/或部分导电的结构，例如呈现一种或者多种介电特性的结构。
现在参考图1，示出了在形成阶段电子器件的一个实施例100的横截面图。这里，实施例100包括衬底102，具有形成在其上的一个或者多个器件层104、106、108和/或110。在一个特定实施例中，器件层104可以包括沟道层；器件层106可以包括电极层，并例如还可以包括漏极和/或源极；器件层108可以包括介电层；以及器件层110可以包括栅极层，在该特定结构中，器件100可以被称作顶栅薄膜晶体管，例如其可以指设置成具有形成在介电层上面或者上方的栅极层的晶体管，尽管需要注意的是这只是一个实施例，但是要求保护的主题不局限于该方案中，可以包括其它的结构，例如底栅晶体管，其可以指设置成具有形成在介电层下面的栅极层的晶体管，这只是举例。另外，当然在这里和该说明书的全篇都应当注意的是，要求保护的主题不局限于形成在相互之上的所述层。例如，可以在多个层之间包括其它的层，因而层可以形成在另一层上或者上方，而不是形成在相互之上，这取决于特定实施例。
然而，在该特定实施例中，尽管要求保护的主题不局限于任何特定的材料和/或材料的组合来形成图1所示的一个或者多个层和/或器件，但是在至少一个实施例中，一个或者多个器件层可以包括下面所述的一种或者多种材料。另外，需要注意的是，要求保护的主题不局限于该方案，一个或者多个器件层可以包括适用于一个或者多个器件层的任何材料或者材料的组合，例如表现出适用于电子器件中的一个或者多个器件层的特性的任何材料。在该实施例中，其中器件层102包括衬底层，器件层102可以包括适合作为衬底的一种或者多种材料，例如，包括硅、二氧化硅、一种或者多种类型的玻璃、一种或者多种有机衬底材料例如聚酰亚胺
Figure S05831428120070321D000041
、聚对苯二甲酸乙二醇酯(PET)、聚醚砜(PES)、聚碳酸酯(Pc)、聚萘二甲酸乙二醇酯(PEN)、聚(甲基丙烯酸甲酯)(PMMA)，不锈钢和/或金属箔，例如包括铝和/或铜箔，但是要求保护的主题不局限于此。另外，在至少一个实施例中，其中衬底材料基本上是由一种或者多种金属构成的，例如，除了一种或者多种金属之外还可以使用绝缘体层。另外，在该特定实施例中，器件层104可以包括沟道层。器件层104可以由适用于沟道层的一种或者多种材料构成，例如，包括金属氧化物，比如氧化锌、氧化锡、氧化铟、氧化镓和/或其组合物；硅，包括非晶的、纳米线、微米带，和/或多晶硅；碳纳米管，例如GaAs、Ge、CdS、CdSe、ZnS、ZnSe、SnS2、SnSo2和/或其组合物。在该实施例中，其中器件层106包括电极层，并可以包括例如一个或者多个源极和/或漏极，器件层106的至少一部分可以基本上包括氧化铟锡，其它的掺杂氧化物半导体和/或金属构成，该掺杂氧化物半导体例如是n型掺杂氧化锌、氧化铟和/或氧化锡，该金属例如是Al、Ag、In、Sn、Zn、Ti、Mo、Au、Pd、Pt、Cu和/或Ni，这只是少数实例。另外，在该实施例中，其中器件层11O包括栅极层，器件层11O可以包括金属，例如Al、Ag、In、Sn、zn、Ti、Mo、Au、Pd、Pt、cu、Ni；以及掺杂氧化物半导体，例如n型掺杂氧化锌、氧化锢和/或氧化锡构成，这只是少数实例。另外，器件层108可以包括例如介电层。在一个实施例中，器件层108可以包括一种或者多种无机和/或有机材料，例如主要包括无机介电材料的一种或者多种材料层，和/或主要包括有机介电材料的一种或者多种材料层。在至少一个实施例中，一种或者多种无机介电材料可以包括氧化锆、氧化锡、氧化钛、氧化钽、氧化钇、氧化镧、氧化硅、氧化铝、氧化铪、钛酸锆酸钡、钛酸锶钡、氮化硅和/或氮氧化硅，这只是少数实例。另外，一种或者多种有机介电材料主要包括UV可硬化的(curable)丙烯酸单体、丙烯酸聚合物、UV可硬化的单体、热可硬化的单体、包括熔融的聚合物和/或低聚体溶液的聚合物溶液、聚甲基丙烯酸甲酯、聚乙烯基苯酚、苯并环丁烯和/或一种或者多种聚酰亚胺，这只是少数实例。
如前面所述的，并且如将在后面更详细地解释的，一种或者多种这些材料可能具有特定的优点和/或缺点。例如，在一个实施例中，与一种或者多种无机材料比较，更容易将一种或者多种有机材料处理到器件层中，例如，与一种或者多种无机材料相比，具有在相对较低的温度下处理的性能，但是可能不呈现出特别想要的特性，例如通过不呈现出特别想要的化学和/或电界面特性，例如通过呈现出降低的膜质量、沟道迁移性能和/或电荷输送特性，其可能对可靠性有所帮助。作为比较，在一个实施例中，一种或者多种无机材料可以呈现出一种或者多种想要的特性，例如想要的化学和/或电界面特性，例如，想要的膜质量、沟道迁移性能和/或电荷输送特性，例如，其可能对可靠性有所帮助，但是非常难以处理。例如，可以在比有机材料相对较高的温度下处理无机材料。当然，注意的是，这里和整个要求保护的主题的该说明书不局限于此，使用这些特定的优点和/或缺点只是用于说明的目的，在一个或者多个实施例中使用的特定特定材料没必要呈现出这些特性中的一个或者多个。
现在参考图2，示出了一种溶液处理器件的实施例120，示为平面图。这里，器件122例如可以包括薄膜器件，例如图1的器件100，并可以包括顶栅薄膜晶体管，尽管要求保护的主题不局限于该方案。另外，器件122可以包括一部分电子器件，例如LCD器件，这只是一个实例。在该实施例中，器件122可以包括沟道部分128；电极部分126，其可以包括源极和/或漏极，介电部分124；和栅极部分130，但是同样地，尽管要求保护的主题不局限于此。另外，例如可以在衬底(未示出)上面或者上方形成一个或者多个上述部分，并可以主要包括层，例如一个或者多个材料层和/或器件层。在一个特定实施例中，可以在一个或多个其它部分附近，例如，在一个或者多个部分的上面和/或下面，形成和图1所示的实施例100相似结构的一个或者多个该部分，但是要求保护的主题不局限于此。然而，在该实施例中，可以在衬底上(未示出)形成沟道部分128和电极部分126。可以在电极部分126和/或沟道部分128的至少一部分上形成介电部分124。在该特定实施例中，栅极部分130形成在介电部分124的至少一部分上。
另外，并如参考图1所示的，尽管要求保护的主题不局限于任何特定特定的材料和/或材料的组合，以形成图2中所示的一个或者多个层和/或器件，但是在至少一个实施例中，一个或者多个器件层可以包括一种或者多种上述的材料。然而，类似于图1，需要注意的是，要求保护的主体不局限于该方案，并且一个或者多个器件层可以包括适用于一个或者多个器件层的任何材料或者材料的组合，例如呈现出适用于电子器件的一个或者多个器件层的特性的任何材料。
图1的器件100和/或图2的器件122的一个或者多个层的形成可以包括一种或者多种处理工艺，和/或大量处理操作，但是要求保护的主体不局限于形成器件100的一个或者多个层和/或一个或者多个电极的任何特定方法。然而，在至少一个实施例中，可以使用一种或者多种溶液处理工艺，例如如下所述的一种或者多种：一种或者多种喷射工艺(例如包括一种或者多种喷墨工艺、一种或者多种热喷墨工艺)、一种或者多种接触印刷工艺、一种或者多种旋涂、浸涂、喷涂、幕涂和/或丝网印刷工艺，和/或化学浴槽沉积和/或连续离子层吸收和/或反应，这只是少数实例，但是同样地，要求保护的主题不局限于此。当在下面参考图3解释时可以更好地理解这里所示的器件形成的特定方法。
现在参考图3，通过流程图示出形成溶液处理器件的技术的一个实施例，当然但是要求保护的主题不局限于该方案的范围中。如下面所述的，应用这种实施例至少部分地形成溶液处理器件。可以使用图3所示的流程图形成器件的至少一部分，例如图1的器件100和/或图2的器件122，但是要求保护的主题不局限于该方案。同样，方框呈现的顺序不是必须将要求保护的主题局限于任何特定的顺序。另外，可以在不脱离要求保护主题的范围的情况下，采用没有示出插入方框。
在替换实施例中，例如可以以软件、硬件和/或固件来实现图3所述的流程140，该固件例如是能够形成器件(例如，图1的器件100和/或图2的器件122)的一个或者多个部分的计算机受控形成系统的一部分，并且该流程140可以包括离散的和/或连续的操作。在该实施例中，在方框142，一种或者多种无机材料可以沉积在器件的至少一部分上或者上方，例如在多层器件的一层或者多层上，例如，包括衬底层、沟道层和/或电极层，这只是少数实例。在方框144，例如通过选择性地去除掉一种或者多种有机材料的至少一部分，和/或改变该一种或者多种无机材料的至少一部分，可以处理该一种或者多种无机材料的一部分，这将在后面更具体地解释。在方框146，可以将一种或者多种有机材料沉积到在方框142沉积的一种或者多种无机材料的至少一部分上或者上方。在方框148，类似于方框144，例如通过选择性地去除该一种或者多种有机材料的至少一部分，和/或改变该一种或者多种无机材料的至少一部分，可以处理该一种或者多种有机材料的一部分，这将在后面更具体地解释。
在该实施例中，在方框142，一种或者多种无机材料可以沉积在器件的至少一部分上或者上方，例如在多层器件的一层或者多层上，例如，包括衬底层、沟道层和/或电极层，这只是少数实例。如图1所示，可以沉积一种或者多种无机介电材料，使得形成至少一部分介电层，例如介电层108。在该实施例中，一种或者多种无机材料，例如氧化锆、氧化锡、氧化钛、氧化钽、氧化钇、氧化镧、氧化硅、氧化铝、氧化铪、钛酸锆酸钡、钛酸锶钡、氮化硅和/或氮氧化硅可以形成在一个或者多个器件层的至少一部分上或者上方，例如电极层106的至少一部分，和/或沟道层104的至少一部分，和/或衬底层102的至少一部分，但是，当然，要求保护的主题不局限于该方案。另外，一种或者多种无机材料的沉积可以包括一个或者多个溶液处理工艺，例如包括，一种或者多种喷射工艺，例如一种或者多种喷出工艺，包括热和/或压电喷出，比如借助于喷墨器件，包括热喷墨(TIJ)器件。另外，可以借助于一种或者多种溶液处理工艺来沉积一种或者多种无机材料，例如一种或者多种接触印刷工艺和/或一种或者多种涂敷工艺，例如一种或者多种旋涂工艺。另外，在一个实施例中，尽管可以使用多种材料或者材料的组合形成无机材料层，使用的材料可以至少部分依赖于使用的一种(或多种)特定工艺，但是无机材料主要包括氧化锆，并可以借助于一种或者多种热喷射工艺沉积，这只是实例。另外，沉积的一种或者多种材料可以是以一种或者多种形式，例如基本上是液体形式、纳米颗粒悬浮形式、无机聚合物溶胶凝胶前驱体(precursor)形式(溶胶凝胶包括在酒精溶液中的部分水解/低聚合的金属醇盐)和/或一种或者多种类型的氧化物和/或前驱体形式，例如金属醇盐、金属盐，和/或部分聚合的金属醇盐，这只是少数实例。在一个实施例中，纳米颗粒悬浮液可以包括悬浮在水、乙二醇和/或酒精溶剂中的SiO2的纳米微粒，例如乙二醇和/或异丙醇。SiO2的纳米微粒可以具有大约20纳米的直径，并可以包括重量百分比为大约15-30％的溶液。另外，沉积的一种(或多种)材料可以沉积成这样的厚度，例如在1-500nm范围内的厚度，但是特定的厚度可能至少部分取决于一个或者多个因素，例如用于形成一个或者多个层的一种(或多种)材料，和/或形成的特定器件。在一个特定实施例中，其中沉积无机材料层，使得形成介电层的至少一部分，例如介电层108，可以通过一种或者多种热喷墨工艺(从溶胶凝胶前驱体)沉积主要包括氧化锆的无机材料，并可以沉积在薄膜晶体管的器件层的一部分上或者上方，使得层具有大约20-100nm范围内的厚度，同样地，尽管要求保护的主题不局限于该方案。
在该实施例中，在方框144，可以处理在方框142沉积的一种或者多种材料的至少一部分，但是，在替换实施例中，例如可以不进行处理。另外，例如，至少可以部分地根据用于形成材料层的一种(或多种)材料，和/或形成的特定器件，选择对一种或者多种材料进行的特定处理。在一个实施例中，例如，借助于一种或者多种激光烧蚀和/或化学刻蚀工艺，可以至少部分地去除一种或者多种无机材料的至少一部分，这可以导致一种或者多种材料的至少一部分被构图。另外，例如，通过被硬化和/或烧结，可以改变一个或者多个部分，如果一种(或多种)材料的至少一部分包括溶胶凝胶前驱体溶液，例如在异丙醇(IPA)和/或1-丁醇和丁基2-乙基己酸酯的混合物中的氧化锆溶胶凝胶前躯体。当用于本文中时，硬化通常指的是这样的工艺，其中液体前驱体基本上转化成基本上固体的膜，例如氧化膜，并可以包括一种或者多种熔剂和/或有机基团去除工艺，和/或由于加热，例如热、激光、微波和/或其它类型的辐射加热导致的金属有机混合物工艺的一种或者多种分解。另外，当用于本文中时，烧结通常指的是这样的工艺，其中，诸如以纳米微粒形式的金属材料之类的材料的多个部分由于比如加热，像热和/或激光加热导致的熔化和重结晶而可能变成基本上单个的块。另外，通过至少部分地凝固、结晶、聚合、构图和/或使密度改变而改变一种或者多种材料的一个或者多个部分，但是同样地，例如，可以至少部分地根据用于形成材料层的一种(或多种)材料和/或形成的特定器件，来选择在对一种或者多种材料上进行的特定处理。
在该实施例中，在方框146，可以在器件的至少一部分上，例如在方框142沉积的一种或者多种无机材料上沉积一种或者多种有机材料。在该实施例中，一种或者多种有机材料可以包括UV可硬化的丙烯酸单体、丙烯酸聚合物、UV可硬化的单体、热可硬化的单体、聚合物溶液例如熔融的聚合物和/或低聚体溶液、聚甲基丙烯酸甲酯、聚乙烯基苯酚、苯并环丁烯和/或一种或者多种聚酰亚胺，这只是少数实例，并可以形成在无机材料的至少一部分上，当然但是要求保护的主题不局限于该方案，例如，可以在一个或者多个其它器件和/或材料层上形成至少一部分有机材料。另外，在替换实施例中，例如，可以在沉积一个或者多个无机材料层之前沉积一个或者多个有机材料层。一种或者多种有机材料的沉积可以包括一个或者多个溶液处理工艺，例如包括一种或者多种喷射工艺，例如一种或者多种喷出工艺，包括热和/或压电喷出，比如借助于喷墨器件，包括TIJ器件。另外，可以借助于一种或者多种溶液处理工艺，例如一种或者多种接触印刷工艺和/或一种或者多种涂敷工艺，比如一种或者多种旋涂，可以沉积一种或者多种有机材料。另外，尽管可以使用多种材料或者材料的组合形成有机材料层，以及使用的一种(或多种)材料至少部分地取决于使用的一种(或多种)特定工艺，但是在一个实施例中，有机材料可以主要包括UV可硬化的单体，例如UV可硬化的丙烯酸单体，和/或一种或者多种聚合物，比如丙烯酸聚合物。在一个典型实施例中，可以使用包括0bjet FullCureTMM 3D印刷构造材料并可以从0bjetGeometries有限公司买得到的UV可硬化丙烯酸单体。在该典型实施例中，UV可硬化的丙烯酸单体另外还可以包括用于聚合的光敏引发剂，并可以在一种或者多种酒精，比如IPA、乙醇和/或甲醇中稀释，以便于降低UV可硬化单体的粘性，并使得它适用于例如喷射机构。
借助于一种或者多种热喷出工艺可以沉积有机材料，这只是一个例子。另外，沉积的一种(或多种)材料可以沉积为这样的厚度，例如在50-5000nm范围内的厚度，但是特定的厚度可以至少部分地取决于一个或者多个因素，例如用于形成一个或者多个层的一种(或多种)材料，和/或形成的特定器件。在一个特定实施例中，其中沉积无机材料层，使得形成至少一部分介电层，例如介电层108，主要包括UV可硬化的丙烯酸单体例如上述的UV可硬化丙烯酸单体0bjetFullCureTM M的有机材料可以通过一种或者多种热喷墨工艺沉积，并可以沉积在薄膜晶体管的器件层的一部分上，使得层具有大约200-2000nm的范围内的厚度，由此基本上形成多层器件，其中多层器件的至少一部分包括无机材料，并且多层器件的至少一部分主要包括有机材料，但是同样地，尽管要求保护的主题不局限于该方案。
然而，继续该实施例，在方框148，可以处理在方框146沉积的一种或者多种材料的至少一部分，但是在替换实施例中，例如可以不进行处理。另外，例如，可以至少部分地根据用于形成材料层的一种(或多种)材料和/或形成的特定器件选择对一种或者多种材料进行的特殊处理。在一个实施例中，例如借助于一种或者多种激光烧蚀工艺，至少可以部分地去除该一种或者多种有机材料的至少一部分，例如其可能使得一种或者多种材料的至少一部分被构图。另外，可以硬化和/或烧结一个或者多个部分，例如，如果一种(或多种)材料的至少一部分包括单体成分，其通常可以聚合以形成例如包括一个或者多个聚合单体的材料层。因此，可以形成包括一种或者多种无机材料和一种或者多种有机材料的器件，其中该一种或者多种材料的至少一部分主要包括器件层。
如前面间接提到的，器件层(例如，介电层)的形成，例如其中该介电层的至少一部分包括无机材料并且器件层的至少一部分包括有机材料，可能导致具有特定特性的介电层，和/或器件的形成，该特性可能不同于不是以这种方式形成的器件，和/或不同于材料的这种特定组合。例如，可以以这种方式形成薄膜晶体管的介电层，并可能导致具有所需特性和/或附加特性的薄膜晶体管的形成，例如具有所需介电特性，包括介电强度、击穿场和/或电流泄漏特性，附加特性包括导通电压、漏电流的通/断比、沟道迁移率、体积特性、缺陷密度、介电常数、化学和/或热稳定性、电荷输送、用于可靠操作和/或膜质量的物理粘着强度，所指出的仅仅是少数实例，但是要求保护的主题不局限于该方案。例如，但是同样地，如前面间接提到的，当在器件例如薄膜晶体管中实施时，有机和/或无机材料可以具有特定的特性。例如，借助于相对高的高温，例如通过烧结可以将无机材料处理成薄膜器件，其可能导致材料层中缺陷的形成，例如裂纹和/或针孔。这可能影响材料层的膜质量，例如，从电特性来看，例如电介质击穿场和/或电流泄漏特性其可能导致低于希望的特性。然而，无机材料可以呈现出希望的热、电和/或化学特性。相反，在处理时有机材料可能不使用相对较高的温度，和/或由于比一种或者多种无机材料更可溶而可能更容易处理，导致改善的膜质量和/或更不复杂的工艺。然而，有机材料可能不提供特别希望的热、电和/或化学特性。因此，根据一个或者多个上述实施例的器件层的形成可能导致具有所希望特性的器件例如薄膜器件的形成，其中该器件层包括一种或者多种有机和无机材料，例如所希望的特性是仅仅由有机和/或无机材料形成的器件不会呈现的特性，这只是实例。下面参考图4的一个或者多个曲线可以更好地理解这些所希望特性的一种或者多种。
现在参考图4，描述器件的多个特性，例如根据一个或者多个上述实施例形成的器件。图4中所示的是曲线160、162、164和166。曲线160示出了具有介电层的薄膜晶体管的特性，该介电层包括单一有机材料。相反，曲线162示出了具有介电层的薄膜晶体管的特性，该介电层包括一种或者多种有机和一种或者多种无机材料。在上述的曲线中，用菱形表示漏极电流(ID)，并用‘x’表示栅极电流(IG)。从曲线160可以看出的是，当使用单一材料时，当在栅源电压(VGS)从-40变化到+40伏特DC的测试条件下运行该器件时，在给定的漏源电压(VDS)上用菱形表示的漏电流ID将不会显著地变化，其可能导致这样的器件，例如其可能不能有效地切断。相反，现在参考曲线162，具有包括一种或者多种有机和无机材料的介电层的器件会呈现出与对于介电层具有单一材料的器件的开关特性不同的开关特性，当在从-40到+40伏特DC的不同栅源电压VGS下运行该器件时，用菱形表示并描述为代表变化的VGS值的多个曲线的漏极电流会呈现出显著的变化，其可能导致对电压更多响应的器件，并可以提供与具有单一材料层的器件不同的开关功能。例如，所示的多个曲线，如在曲线162上取向为从最高到最低，分别表示+40伏特DC、+20伏特DC、0伏特DC、-20伏特DC和-40伏特DC的VGS值。另外，和对于介电层具有单一材料层的器件比较，当使用具有包括一种或者多种有机和无机材料的介电层的器件时，曲线160和162表明栅极电流IG泄漏不会显著地变化，尽管具有包括一种或者多种有机和无机材料的介电层的器件可以提供不同于例如具有包括一种材料的介电层的器件的开关功能。
另外，参考曲线164和166，还可以表示例如根据一个或者多个上述实施例形成的器件的特性。曲线164示出了具有包括单一有机材料的介电层的器件的对数尺度特性。相反，曲线166示出了具有由一种或者多种有机和无机材料组成的介电层的器件的对数标度特性。从曲线164可以看出的是，当使用单一材料时，当在改变栅源电压VGS的测试条件下操作该器件时，以及同时在其中漏源电压VDS为+10伏特DC的测试条件下操作该器件时，漏极电流ID的变化将不大。现在参考曲线166，类似于曲线162，具有包括一种或者多种有机和无机材料的介电层的器件可以呈现出与对于介电层具有单一材料层的器件的开关特性不同的开关特性，以及当在不同的栅源电压下操作该器件时漏极电流会呈现出变化。另外，与对于介电层具有单一材料层的器件比较，当使用具有包括一种或者多种有机和无机材料的介电层的器件时，曲线164和166表示栅极电流IG不会显著地变化。
当然，现在可以理解的是，根据上述公开的至少一部分，可以产生能够执行多种操作的软件，包括一种或者多种上述的操作，如前所述，其可以在适用于形成溶液处理器件的系统中执行。另外将理解的是，尽管只是描述了特定的实施例，但是要求保护的主题没有将保护范围局限于特定的实施例或者执行。例如，参考图3描述的能够执行一种或者多种上述操作的系统可以包括硬件，例如之前所述的器件或者器件的组合进行操作而执行的硬件，然而，另一个实施例可以是以软件实现。同样，例如，可以以固件或者作为硬件、软件和/或固件的任何组合，实现能够执行一种或者多种上述操作的系统的实施例。另外，可以执行一个实施例的全部或者部分，以在一个器件中至少部分地操作，例如喷射器件、激光器件、显示器、计算机设备、机顶盒、蜂窝电话、个人数据助理(PDA)和/或灵巧的部件。同样，尽管要求保护的主题没有将保护范围局限于该方案，但是一个实施例可以包括一个或者多个部件，例如存储介质或者存储媒介。该存储媒介，例如一个或者多个CD-R0M和/或磁盘可以具有存储在其上的指令，当通过系统执行时，例如计算机系统、计算平台、机顶盒、蜂窝电话、个人数据助理(PDA)和/或灵巧封装和/或其它系统可能产生根据执行要求保护的主题的方法的实施例，例如之前描述的其中一个实施例。作为一个可能的实例，计算平台可以包括一个或者多个处理单元或处理器、一个或者多个输入/输出器件，例如显示器、键盘和/或鼠标和/或一个或者多个存储器，例如静态随机存取存储器、动态随机存储存储器、快速存储器和/或硬盘驱动器，但是同样地，尽管要求保护的主题没有将保护范围局限于该实例。
在之前的描述中，已经描述了要求保护的主题的多个方面，为了解释的目的，陈述了特定的数目、系统和/或结构，以提供对要求保护的主题的全面理解。然而，受益于该公开文本的本领域普通技术人员应当理解的是，在不脱离特定细节时可以实践要求保护的主题。在其它实例中，省略和/或简化了公知的特征，以便于不混淆要求保护的主题。尽管这里已经示出和/或描述了某些特征，但是对于本领域技术人员来说很容易作出很多修改、代替、变化和/或等价。因此，应当理解的是，所附权利要求旨在覆盖落在要求保护主题的真实精神范围内所有的这些修改和/或变化。

Claims (20)

1.一种形成溶液处理器件的方法，包括：
借助于一种或者多种溶液处理工艺，在衬底的至少一部分上沉积第一材料以形成第一材料层，所述第一材料层的至少一部分包括无机介电材料；
借助于一种或者多种溶液处理工艺，在所述第一材料层的所述至少一部分上和/或与所述第一材料层的所述至少一部分相接触地沉积第二材料，以形成第二材料层，所述第二材料层的至少一部分包括有机介电材料，以形成介电器件层的至少一部分；并且
其中所述无机介电材料是由悬浮在水、乙二醇和/或酒精溶剂中的氧化硅的纳米微粒形成的。
2.如权利要求1的方法，进一步包括：至少部分地改变所述第一和/或所述第二材料层的所述至少一部分。
3.如权利要求2的方法，其中所述改变包括下列各项中的一种或多种：凝固、烧蚀、结晶、去除、硬化、聚合、致密和/或构图。
4.如权利要求1的方法，其中所述沉积所述第一材料和所述沉积所述第二材料包括不同工艺。
5.如权利要求1的方法，其中所述一种或者多种溶液处理工艺包括如下各项中的一种或多种：喷射工艺、旋涂工艺、接触印刷工艺、浸涂工艺、喷涂工艺、幕帘涂布工艺、丝网印刷工艺和/或化学浴槽沉积。
6.如权利要求5的方法，其中所述一种或者多种溶液处理工艺包括连续离子层吸收和/或反应。
7.如权利要求5的方法，其中所述喷射工艺由喷射器件执行。
8.如权利要求7的方法，其中所述喷射器件包括热喷墨器件。
9.如权利要求1的方法，其中所述无机介电材料包括下述材料中的一种或多种：氧化锆、氧化锡、氧化钛、氧化钽、氧化钇、氧化镧、氧化硅、氧化铝、氧化铪、锆钛酸钡、钛酸锶钡、氮化硅和/或氮氧化硅。
10.如权利要求1的方法，其中所述有机介电材料包括下述材料中的一种或者多种：丙烯酸聚合物、UV可硬化的单体、热可硬化的单体、包括熔融的聚合物和/或低聚体溶液的聚合物溶液、聚甲基丙烯酸甲酯和/或聚乙烯基苯酚。
11.如权利要求10的方法，其中所述有机介电材料包括一种或者多种聚酰亚胺。
12.如权利要求1的方法，其中所述第一和所述第二材料中的至少一种包括至少部分地悬浮在溶剂中的微粒的溶液。
13.如权利要求12的方法，其中所述第一材料包括悬浮在水、乙二醇和/或酒精的溶液中的SiO2的纳米微粒，所述SiO2的纳米微粒具有20纳米的直径，并且包括重量百分比为15-30％的溶液。
14.如权利要求9的方法，其中所述无机介电材料被形成到1-500nm范围内的厚度。
15.如权利要求9的方法，其中所述无机介电材料还包括氧化锆并且被形成到20-100nm范围内的厚度。
16.如权利要求10的方法，其中所述有机介电材料被形成到50-5000nm范围内的厚度。
17.如权利要求10的方法，其中所述有机介电材料包括UV可硬化的丙烯酸单体，并且被形成到200-2000nm范围内的厚度。
18.如权利要求1的方法，其中所述衬底包括薄膜晶体管的至少一部分。
19.如权利要求10的方法，其中所述UV可硬化的单体为UV可硬化的丙烯酸单体。
20.如权利要求10的方法，其中所述热可硬化的单体为苯并环丁烯。
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