JP2007273949A - ナノ粒子を用いたトップゲート型薄膜トランジスタおよびその製造方法 - Google Patents
ナノ粒子を用いたトップゲート型薄膜トランジスタおよびその製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 title claims abstract 5
- 239000000758 substrate Substances 0.000 claims abstract description 82
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 9
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- 229910010272 inorganic material Inorganic materials 0.000 claims description 8
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- 229910004262 HgTe Inorganic materials 0.000 claims description 6
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
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- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
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- 239000010703 silicon Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
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- 238000003618 dip coating Methods 0.000 claims description 3
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- 239000002245 particle Substances 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 2
- 150000003457 sulfones Chemical class 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 9
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
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- 229920000767 polyaniline Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】 基板上にナノ粒子膜を形成させ、熱処理するステップと、ナノ粒子膜にソース電極とドレイン電極を形成させるステップと、ソースとドレイン電極が形成されたナノ粒子膜の上部に絶縁体を蒸着させ、ゲート絶縁層を形成させるステップと、ゲート絶縁層の上部に、トップゲート電極を形成させるステップとを含む。
【選択図】 図4
Description
15 バッファ層
20 ナノ粒子膜
31 ソース電極
32 ドレイン電極
40 ゲート絶縁層
50 トップゲート電極
Claims (20)
- ナノ粒子を用いた薄膜トランジスタの製造方法であって、
基板上にナノ粒子膜を形成させ、熱処理するステップと、
前記ナノ粒子膜にソース電極とドレイン電極を形成させるステップと、
前記ソースとドレイン電極が形成されたナノ粒子膜の上部に絶縁体を蒸着させ、ゲート絶縁層を形成させるステップと、
前記ゲート絶縁層の上部に、トップゲート電極を形成させるステップと、
を含むことを特徴とするナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。 - 前記基板と前記ナノ粒子膜との間に、親水性物質としてバッファ層を蒸着形成するステップをさらに含むことを特徴とする請求項1に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記基板は、シリコン基板、ガラス基板、およびフレキシブル基板のいずれか一つであることを特徴とする請求項1または2に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記フレキシブル基板は、プラスチック基板であることを特徴とする請求項3に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記プラスチック基板は、PET(Polyethylene Terephthalate)、PEN(Polyethylenapthanate)、PC(Polycarbonate)、およびPES(Polyethylen
sulfone)のいずれか一つであることを特徴とする請求項4に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。 - 前記バッファ層は、親水性の無機物または親水性の有機物であることを特徴とする請求項2に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記親水性の無機物は、Al2O3、HfO2、Ta2O5、La2O3、およびSiO2のいずれか一つであることを特徴とする請求項6に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記親水性の無機物は、原子層蒸着法(ALD)またはスパッタ法または有機金属化学気相蒸着法(MOCVD)を用いて形成されることを特徴とする請求項7に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記有機物は、AIDCN、Polyaniline、Cd−AA(Arachidate)、PVP、PVA、PEDOTのいずれか一つであることを特徴とする請求項6に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記有機物は、反応ガスとしてO3を用いた紫外線(UV)工程、または反応ガスとしてO2を用いたプラズマ工程を通じて、表面が親水化することを特徴とする請求項9に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記有機物は、スピンコート法、スプレー法、Langmuir−Blodgett法、およびプリント法のいずれか一つを用いて蒸着形成されることを特徴とする請求項10に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記バッファ層の厚さは、2nm〜20nmの範囲であることを特徴とする請求項2に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記バッファ層は、100℃〜150℃の範囲の温度で、前記基板上に蒸着されることを特徴とする請求項2に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記ナノ粒子膜を形成させるステップは、
ナノ粒子を溶媒に分散させ、ナノ粒子溶液を用意する工程と、
前記ナノ粒子溶液に沈殿剤を混合させる工程と、
前記沈殿剤が含まれたナノ粒子溶液を前記基板上に蒸着する工程と、
を含むことを特徴とする請求項1または2に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。 - 前記ナノ粒子は、HgTe、HgSe、HgS、CdTe、CdSe、CdS、ZnTe、ZnSe、ZnS、PbTe、PbSe、PbS、およびZnOのいずれか一つであることを特徴とする請求項14に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記沈殿剤が含まれたナノ粒子溶液を、前記基板上に蒸着する方法は、スピンコート法、ディップコート法、スタンプ法、スプレー法、Langmuir−Blodgett法、およびプリント法のいずれか一つを用いることを特徴とする請求項14に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記熱処理は、100℃〜185℃で10〜200分間行われることを特徴とする請求項1または2に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記ゲート絶縁層は、高誘電定数の絶縁体を、前記ナノ粒子膜上に蒸着して形成するが、このような絶縁体としては、Al2O3、HfO2、Ta2O5、La2O3、SiO2のような無機物や、AIDCN、Polyaniline、Cd−AA(Arachidate)、PVP、PVA、PEDOTのような有機物のいずれか一つが、前記ナノ粒子膜の上部に蒸着されて形成されることを特徴とする請求項1または2に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- 前記高誘電定数の絶縁体を前記ナノ粒子膜の上部に蒸着するときの基板温度は、100℃〜185℃の範囲とし、前記ゲート絶縁層の厚さは、10nm〜500nmの範囲であることを特徴とする請求項18に記載のナノ粒子を用いたトップゲート型薄膜トランジスタの製造方法。
- ナノ粒子を用いた薄膜トランジスタにおいて、
フレキシブル基板上に親水性物質で蒸着されて形成されるバッファ層と、
前記バッファ層上に蒸着されて熱処理されるナノ粒子膜と、
前記ナノ粒子膜上に形成されるソース電極およびドレイン電極と、
前記ソースとドレイン電極が形成されたナノ粒子膜の上部に絶縁体を蒸着させて形成されるゲート絶縁層と、
前記ゲート絶縁層の上部に形成されるトップゲート電極と、
を備えることを特徴とするナノ粒子を用いたトップゲート型薄膜トランジスタ。
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