JP5249243B2 - 原子層堆積法 - Google Patents
原子層堆積法 Download PDFInfo
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- JP5249243B2 JP5249243B2 JP2009547254A JP2009547254A JP5249243B2 JP 5249243 B2 JP5249243 B2 JP 5249243B2 JP 2009547254 A JP2009547254 A JP 2009547254A JP 2009547254 A JP2009547254 A JP 2009547254A JP 5249243 B2 JP5249243 B2 JP 5249243B2
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- Prior art keywords
- gas
- substrate
- thin film
- deposition
- zinc oxide
- Prior art date
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- 238000000231 atomic layer deposition Methods 0.000 title description 88
- 239000007789 gas Substances 0.000 claims description 289
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 210
- 239000000463 material Substances 0.000 claims description 204
- 239000000758 substrate Substances 0.000 claims description 204
- 238000000151 deposition Methods 0.000 claims description 151
- 239000004065 semiconductor Substances 0.000 claims description 141
- 230000008021 deposition Effects 0.000 claims description 135
- 238000000034 method Methods 0.000 claims description 107
- 239000011787 zinc oxide Substances 0.000 claims description 105
- 239000010409 thin film Substances 0.000 claims description 78
- 239000002243 precursor Substances 0.000 claims description 67
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 57
- 238000006243 chemical reaction Methods 0.000 claims description 40
- 239000002019 doping agent Substances 0.000 claims description 35
- 238000010926 purge Methods 0.000 claims description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 19
- 239000011701 zinc Substances 0.000 claims description 18
- 239000000376 reactant Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 12
- 239000012495 reaction gas Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 125000000962 organic group Chemical group 0.000 claims description 3
- 230000000153 supplemental effect Effects 0.000 claims description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
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- 229910021478 group 5 element Inorganic materials 0.000 description 3
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- 229910052738 indium Inorganic materials 0.000 description 3
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
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- 125000000217 alkyl group Chemical group 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/627,525 US8207063B2 (en) | 2007-01-26 | 2007-01-26 | Process for atomic layer deposition |
| US11/627,525 | 2007-01-26 | ||
| PCT/US2008/000466 WO2008091504A1 (en) | 2007-01-26 | 2008-01-14 | Process for atomic layer deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010517292A JP2010517292A (ja) | 2010-05-20 |
| JP2010517292A5 JP2010517292A5 (cg-RX-API-DMAC7.html) | 2013-04-04 |
| JP5249243B2 true JP5249243B2 (ja) | 2013-07-31 |
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| JP2009547254A Expired - Fee Related JP5249243B2 (ja) | 2007-01-26 | 2008-01-14 | 原子層堆積法 |
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| US (1) | US8207063B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2106459A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5249243B2 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2008091504A1 (cg-RX-API-DMAC7.html) |
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| US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI472037B (zh) * | 2005-01-28 | 2015-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| TWI481024B (zh) | 2005-01-28 | 2015-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| US7858451B2 (en) * | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7928938B2 (en) | 2005-04-19 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including memory circuit, display device and electronic apparatus |
| US8629819B2 (en) | 2005-07-14 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| EP1758072A3 (en) * | 2005-08-24 | 2007-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
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| EP2924498A1 (en) | 2006-04-06 | 2015-09-30 | Semiconductor Energy Laboratory Co, Ltd. | Liquid crystal desplay device, semiconductor device, and electronic appliance |
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| US7646015B2 (en) * | 2006-10-31 | 2010-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device and semiconductor device |
| US11136667B2 (en) * | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
| US20080166880A1 (en) * | 2007-01-08 | 2008-07-10 | Levy David H | Delivery device for deposition |
| KR101312259B1 (ko) * | 2007-02-09 | 2013-09-25 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
| JP5121254B2 (ja) * | 2007-02-28 | 2013-01-16 | キヤノン株式会社 | 薄膜トランジスタおよび表示装置 |
| WO2008128365A1 (en) * | 2007-04-19 | 2008-10-30 | Basf Se | Method for forming a pattern on a substrate and electronic device formed thereby |
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| JP4989309B2 (ja) | 2007-05-18 | 2012-08-01 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US8354674B2 (en) * | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
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| US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
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| US7972898B2 (en) | 2007-09-26 | 2011-07-05 | Eastman Kodak Company | Process for making doped zinc oxide |
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| WO2020217130A1 (ja) | 2019-04-26 | 2020-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
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| US12102010B2 (en) | 2020-03-05 | 2024-09-24 | Akoustis, Inc. | Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices |
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| FI57975C (fi) | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
| WO2002016679A1 (en) | 2000-08-18 | 2002-02-28 | Tohoku Techno Arch Co., Ltd. | Polycrystalline semiconductor material and method of manufacture thereof |
| JP4158139B2 (ja) * | 2002-04-30 | 2008-10-01 | スズキ株式会社 | 薄膜の製造方法およびその装置 |
| US20050084610A1 (en) | 2002-08-13 | 2005-04-21 | Selitser Simon I. | Atmospheric pressure molecular layer CVD |
| US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
| US6888172B2 (en) | 2003-04-11 | 2005-05-03 | Eastman Kodak Company | Apparatus and method for encapsulating an OLED formed on a flexible substrate |
| JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| CN101072895A (zh) * | 2004-12-10 | 2007-11-14 | 皇家飞利浦电子股份有限公司 | 用于燃烧化学气相沉积的基板温度控制 |
| ES2361661T3 (es) * | 2006-03-26 | 2011-06-21 | Lotus Applied Technology, Llc | Dispositivo y procedimiento de deposición de capas atómicas y método de revestimiento de substratos flexibles. |
| US7456429B2 (en) | 2006-03-29 | 2008-11-25 | Eastman Kodak Company | Apparatus for atomic layer deposition |
| US7413982B2 (en) | 2006-03-29 | 2008-08-19 | Eastman Kodak Company | Process for atomic layer deposition |
| US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
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| EP2106459A1 (en) | 2009-10-07 |
| WO2008091504A1 (en) | 2008-07-31 |
| JP2010517292A (ja) | 2010-05-20 |
| US8207063B2 (en) | 2012-06-26 |
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