CN101154716B - 电子设备、有机电致发光装置、有机薄膜半导体装置 - Google Patents
电子设备、有机电致发光装置、有机薄膜半导体装置 Download PDFInfo
- Publication number
- CN101154716B CN101154716B CN2007101542708A CN200710154270A CN101154716B CN 101154716 B CN101154716 B CN 101154716B CN 2007101542708 A CN2007101542708 A CN 2007101542708A CN 200710154270 A CN200710154270 A CN 200710154270A CN 101154716 B CN101154716 B CN 101154716B
- Authority
- CN
- China
- Prior art keywords
- organic
- substrate
- electronic equipment
- electrolytic element
- electroluminescent device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000007784 solid electrolyte Substances 0.000 claims abstract description 26
- 239000011368 organic material Substances 0.000 claims abstract description 14
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000012267 brine Substances 0.000 claims description 6
- 239000005518 polymer electrolyte Substances 0.000 claims description 6
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 claims description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 18
- 238000007789 sealing Methods 0.000 abstract description 9
- 230000035699 permeability Effects 0.000 abstract description 3
- 239000003792 electrolyte Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 53
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 26
- 239000001301 oxygen Substances 0.000 description 26
- 229910052760 oxygen Inorganic materials 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000010408 film Substances 0.000 description 19
- 230000006866 deterioration Effects 0.000 description 18
- 239000011521 glass Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 14
- 239000011159 matrix material Substances 0.000 description 13
- 238000010276 construction Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 238000001962 electrophoresis Methods 0.000 description 12
- 229920003023 plastic Polymers 0.000 description 11
- 239000004033 plastic Substances 0.000 description 11
- 239000000565 sealant Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- -1 polyphenylene Polymers 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229920000265 Polyparaphenylene Polymers 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 4
- AHFMSNDOYCFEPH-UHFFFAOYSA-N 1,2-difluoroethane Chemical class FCCF AHFMSNDOYCFEPH-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229920002521 macromolecule Polymers 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 230000036647 reaction Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000003456 ion exchange resin Substances 0.000 description 2
- 229920003303 ion-exchange polymer Polymers 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- QZVHYFUVMQIGGM-UHFFFAOYSA-N 2-Hexylthiophene Chemical compound CCCCCCC1=CC=CS1 QZVHYFUVMQIGGM-UHFFFAOYSA-N 0.000 description 1
- JKFYKCYQEWQPTM-UHFFFAOYSA-N 2-azaniumyl-2-(4-fluorophenyl)acetate Chemical compound OC(=O)C(N)C1=CC=C(F)C=C1 JKFYKCYQEWQPTM-UHFFFAOYSA-N 0.000 description 1
- 229910000873 Beta-alumina solid electrolyte Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910018136 Li 2 Ti 3 O 7 Inorganic materials 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229920000557 Nafion® Polymers 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021612 Silver iodide Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- YSZKDKZFYUOELW-UHFFFAOYSA-N [diphenyl-(4-propan-2-ylcyclohexyl)methyl]benzene Chemical compound C1(=CC=CC=C1)C(C1CCC(CC1)C(C)C)(C1=CC=CC=C1)C1=CC=CC=C1 YSZKDKZFYUOELW-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical compound OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 1
- OHUWRYQKKWKGKG-UHFFFAOYSA-N formaldehyde;pyrene Chemical compound O=C.C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 OHUWRYQKKWKGKG-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- QSQIGGCOCHABAP-UHFFFAOYSA-N hexacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC=CC=C6C=C5C=C4C=C3C=C21 QSQIGGCOCHABAP-UHFFFAOYSA-N 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- OUUQCZGPVNCOIJ-UHFFFAOYSA-N hydroperoxyl Chemical compound O[O] OUUQCZGPVNCOIJ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- IYDGMDWEHDFVQI-UHFFFAOYSA-N phosphoric acid;trioxotungsten Chemical compound O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.OP(O)(O)=O IYDGMDWEHDFVQI-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229940045105 silver iodide Drugs 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
本发明提供即使在用有机材料等气体透过性比较高的材料构成密封结构的情况下，也能确保充分的可靠性的电子设备。本发明的电子设备(有机EL设备1)具备：基板(2)；功能元件(有机EL元件(3))，其包含形成在基板(2)上的有机材料层；电解元件(4)，其设置在基板的形成有功能元件的一侧或与形成有功能元件的一侧相反的一侧，且具有固体电解质层(5)和夹持其的一对电极(6、7)而构成，能够电解水；密封构件(密封层8)，其密封功能元件和电解元件。
Description
技术领域
本发明涉及电子设备、有机电致发光装置、有机薄膜半导体装置，特别是涉及具备有机半导体元件、氧化物半导体元件、有机电致发光元件等的电子设备的密封技术。
背景技术
近年，正开发在手机、PDA等便携设备或个人计算机等显示部上使用有机电致发光(Electro-Luminescence，以下也简称EL)显示装置、电泳显示装置等薄型显示器的技术。有机EL显示装置，在基板面内具备具有EL层(发光层)的多个发光元件，通过独立地驱动控制各发光元件而进行所期望的显示。另外，还研究了通过将具备有机薄膜晶体管(Thin FilmTransistor，以下略记为TFT)的有源矩阵基板和例如电泳元件组合而构成电泳显示装置的情况。这样，有机EL元件或有机TFT期待作为显示器用设备，尤其，由于使用了有机材料的设备可以在比较低的温度下制作，因此可以使用塑料基板，从而作为柔性元件的可能性值得期待。
不过，这些有机设备的可靠性具有大的问题。例如，对于有机EL显示装置来说，公知上述的发光部因氧或水分而劣化，因此需要防止氧或水的侵入的高气密性的密封结构。此外，不仅防止来自外部的氧或水分的侵入，而且需要向元件内部充入吸气剂(干燥剂、氧吸附剂等)而俘获少量侵入的氧或水分。即，光靠密封结构，可靠性的提高并不充分，如果没有俘获侵入的有害成分的机构，则设置密封结构的效果就不能长期持续。例如，在被密封结构密闭的空间的内部配置了吸气剂的有机EL显示装置的例子公开于下述的专利文献1，2中。
另外，在有机TFT的情况下，存在下述情况：即使在真空中或惰性气体气氛中稳定地工作，但是如果暴露于含氧或水分的大气中，则特性也劣化。为此，和有机EL装置一样，需要密封结构和俘获有害成分的机构。
专利文献1：特开2000-208252号公报
专利文献2：专利第2686169号公报
如上所述，有机EL元件或有机TFT具有可以在低温下制作的特点，适合于柔性元件的制作。不过，在这里可靠性依然成为问题。即，如果作为设备侧的基板使用玻璃基板，则作为密封结构(密封用基板)的材料也可以使用玻璃或金属。在这种情况下，可以实现高气密性的密封结构。另一方面，作为设备侧的基板，使用塑料基板时，如果密封结构的材料使用玻璃或金属，则不能实现柔性元件，使用了塑料基板的意义也不存在。因此，这时必然在密封结构侧也使用塑料，但如果使用塑料，则想实现高气密性的密封结构还很困难。虽然具体提出了用树脂被膜或无机薄膜或它们的多层结构密封有机设备，不过这些材料的气体透过性与玻璃或金属的气体透过性相比非常大，因此密封不充分。另外，即使设置吸气剂等俘获机构，也会在比较短的时间内达到俘获限度，因此难以实用化。
发明内容
本发明的一种方式是为了解决上述问题而提出的，其目的在于，提供即使在例如用有机材料等气体透过性比较高的材料构成密封结构的情况下，也能确保充分的可靠性的电子设备、有机电致发光装置、有机薄膜半导体装置。
为了达到上述的目的，与本发明相关的电子设备，其特征在于，具备：基板；功能元件，其形成在所述基板上；电解元件，其设置在所述基板的形成有所述功能元件的一侧或与形成有所述功能元件的一侧相反的一侧，且具有固体电解质层和夹持所述固体电解质层的一对电极而构成，能够电解水；密封构件，其密封所述功能元件和所述电解元件。另外，作为所述功能元件，可以使用含有有机材料层的功能元件。或者，所述功能元件可以使用含有氧化物半导体层的功能元件。
本申请的发明者，在控制了气氛之后测定了各种功能元件的特性变化，其结果发现，包含于大气中的气体成分中，最成为问题的气体是水(水分)。当初，虽然考虑为和水分一样，氧的影响也大，但实际上知道了如果将元件暴露在含有水分的气氛中，则特性的劣化显著的事实。另一方面，根据元件结构或构成材料，也有在氧中完全没有劣化的元件。因此，本申请的发明者，将气氛中的水分考虑为最有害的成分，通过电解将侵入到设备内部的水变成氧和氢，从而完成了发明。
根据本发明的电子设备的构成，由于由固体电解质层和一对电极构成的电解元件被密封在密封构件的内部，因此即使水侵入于密封构件的内部，水也会被电解元件分解而变换为氧和氢。根据该作用，位于电解元件附近的功能元件的因水分导致的特性劣化得以抑制，可以实现可靠性优异的电子设备。
另外，可以采用功能元件和电解元件叠层在基板的一面侧的构成。
功能元件和电解元件，例如还可以并置在基板的一面侧，但如果是将功能元件和电解元件叠层的构成，则不仅可以提高可靠性，并且可以实现有机电子设备的小型化。
另外，在上述的构成中，优选，构成电解元件的一对电极中，阴极朝功能元件侧配置，阳极朝与功能元件相反侧配置。
在水的电解中，在阴极产生如下反应。
2H++2e-→H2
另一方面，在阳阴极产生如下反应。
4OH-→2H2O+O2+4e-
氢气对于功能元件无害，氧气即使达不到水分那种有害的程度，也有可能成为使功能元件劣化的原因。因而，如果将阴极朝功能元件侧配置，将阳极朝与功能元件相反侧配置，则可以抑制因氧导致的功能元件的特性劣化。
此外，在上述的构成中，优选，阳极具有气体透过孔。
根据该构成，由于在固体电解质层和阳极的界面产生的氧通过气体透过孔缓慢地向外部排出，因此氧不会在一定浓度以上，从而可以持续因氧导致的元件特性劣化的抑制效果。
另外，优选，基板和密封构件均由树脂材料构成。
由于通常树脂材料具有某种程度的气体透过性，尤其在密封构件由树脂材料构成时，大气将侵入密封构件的内部。不过，在本发明的构成中，由于在密封构件的内部具备电解元件，因此如上所述，可以抑制因水分导致的功能元件的特性劣化。并且，在基板和密封构件均由树脂材料构成时，可以实现柔性的电子设备，从而优选地应用于例如便携设备等。
另外，优选，所述固体电解质层由高分子电解质材料构成。
作为高分子电解质材料，例如可以使用离子交换树脂等，容易获得且能够以低成本实现。
尤其，如果高分子电解质材料为含有磺酸基的材料，则因极化变大而电解能力提高，此外构成高分子电解材料的至少一部分的氢被氟取代时，可以得到更大的极化和疏水性。
另外，优选，构成所述电解元件的电极的材料含有铂或钯。
根据该构成，作为电极材料的铂或钯还具有催化剂作用，因此可以使上述的电解反应更有效地进行。
另外，与本发明有关的有机EL装置，其特征在于，具备：基板；有机EL元件，其包含形成在所述基板上的有机材料层；电解元件，其设置在所述基板的形成有所述有机EL元件的一侧或与形成有所述有机EL元件的一侧相反的一侧，且具有固体电解质层和夹持所述固体电解质层的一对电极而构成，能够电解水；密封构件，其密封所述有机EL元件和所述电解元件。
根据本发明的有机EL装置的构成，由于由固体电解质层和一对电极构成的电解元件被密封在密封构件的内部，因此即使水侵入于密封构件的内部，水也会被电解元件分解而变换为氧和氢。根据该作用，位于电解元件附近的有机EL元件的因水分导致的特性劣化得以抑制，可以实现可靠性优异的有机EL装置。
另外，优选，有机EL元件具有夹着发光层对置的透明电极和反射电极，且电解元件叠层在有机EL元件的设置有反射电极的一侧。
在电解元件叠层在有机EL元件的设置有反射电极的一侧时，电解元件位于与有机EL元件的光射出侧相反侧。这时，由于电解元件不需要具有光透过性，因此电解元件的构成材料的选择自由度增大，将容易制作电解元件。
另外，与本发明有关的有机薄膜半导体装置，其特征在于，具备：基板；有机TFT，其包括形成在所述基板上的有机材料层；电解元件，其设置在所述基板的形成有所述有机TFT的一侧或与形成有所述有机TFT的一侧相反的一侧，且具有固体电解质层和夹持所述固体电解质层的一对电极而构成，能够电解水；密封构件，其密封所述有机TFT和所述电解元件。
根据本发明的有机薄膜半导体装置的构成，由于由固体电解质层和一对电极构成的电解元件被密封在密封构件的内部，因此即使水侵入于密封构件的内部，水也会被电解元件分解而变换为氧和氢。根据该作用，位于电解元件附近的有机TFT的因水分导致的特性劣化得以抑制，可以实现可靠性优异的有机薄膜半导体装置。
另外，优选，电解元件配置在基板的与设置有有机薄膜晶体管的一侧相反的一侧的面上。
在有机TFT的情况中，由于在基板上制作源极、漏极、门极等的关系，在基板上会产生阶梯差。因而，在与设置有有机TFT的一侧相反的一侧的基板面上，容易制作电解元件。
附图说明
图1是第1实施方式的有机EL装置(电子设备)的剖面图。
图2是表示第1实施方式的有机EL基板的详细构成的剖面图。
图3是第2实施方式的有机EL装置(电子设备)的剖面图。
图4是第3实施方式的电泳显示装置(电子设备)的剖面图。
图5是表示第3实施方式的电泳显示装置所使用的有机TFT的详细构成的剖面图。
图6是第3实施方式的电泳显示装置的变形例的剖面图。
图7是第4实施方式的电泳显示装置(电子设备)的剖面图。
图中：1、21-有机EL装置(电子设备)，2-玻璃基板(基板)，3-有机EL元件(功能元件)，4-电解元件，5-固体电解质层，6-阴极，7-阳极，31、44、51-电泳显示装置(电子设备)、32-有机TFT支承基板(基板)、38-有机TFT(功能元件)，53-氧化物TFT支承基板(基板)。
具体实施方式
[第1实施方式]
以下，参照图1、图2说明本发明的第1实施方式。
本实施方式的有机电子设备是将电解元件叠层在作为功能元件的有机EL元件上的有机EL装置的例子。
图1是本发明的实施方式有机EL装置的剖面图，图2是表示有机EL基板的详细构成的放大剖面图。还有，在下面的全部图中，为便于看见各构成要素而使每个构成要素的尺寸或膜厚的缩尺不同。
本实施方式的有机EL装置1，如图1所示，有机EL元件3形成在玻璃基板2的一面，电解元件4叠层在有机EL元件3上。电解元件4由固体电解质层5和夹持该层的阴极6、阳极7构成，将阴极6朝有机EL元件3侧配置，将阳极7朝与有机EL元件3相反侧配置。因而，这些有机EL元件3和电解元件4由形成于玻璃基板2的一面侧的密封层8(密封构件)一体密封。
有机EL元件3，如图2所示，是像素电极9(阳极)、空穴注入层10、发光层11、电子输送层12、共用电极13(阴极)在玻璃基板2上叠层的构成。空穴注入层10、发光层11、电子输送层12由有机物材料形成，根据这些有机物层构成了有机功能层14。即，有机功能层14夹持在像素电极9和共用电极13之间，由这些像素电极9、有机功能层14、共用电极13构成了有机EL元件3。在本构成中，如果向像素电极9和共用电极13间施加电压，则从共用电极13注入的电子和从像素电极9注入的空穴在发光层11中再结合，在再结合时放出的能量以荧光或磷光的形式放出。从有机EL元件3放出的光L，从玻璃基板2向外部射出(底发射方式)。因而，在本实施方式中，共用电极13起到反射电极的作用，各向同性地放出的光朝玻璃基板2侧射出。
像素电极9由铟锡氧化物(Indium Tin Oxide，以下略记为ITO)形成。在这里省略图示，不过像素电极9经由TFT被有源矩阵电路驱动。另外，空穴注入层10由芳胺衍生物、酞菁衍生物、聚苯胺衍生物+有机酸、聚噻吩衍生物+聚酸等有机材料形成。特别是，优选聚乙烯二氧噻吩和聚苯乙烯磺酸的混合物(PEDOT/PSS)。
发光层11包含具有环氧基等交联性官能团的发光材料而构成。作为这样的发光材料，可以优选使用作为能进行荧光发光或磷光发光的众所周知的高分子发光材料的聚芴衍生物(PF，例如F8BT)、聚对苯亚乙烯衍生物(PPV)、聚苯撑衍生物(PP)、聚对苯撑衍生物(PPP)、聚乙烯咔唑(PVK)、聚噻吩衍生物或聚甲基苯基硅烷(PMPS)等聚硅烷系等高分子有机材料。
作为电子输送层12的材料，可以优选使用聚芴衍生物、聚对苯亚乙烯衍生物、聚对苯撑衍生物、聚乙烯咔唑、聚噻吩衍生物、聚甲基苯基硅烷等聚硅烷系等高分子有机材料。这些空穴注入层10、发光层11、电子输送层12的各层，可以通过以旋涂法、喷墨法等湿式涂敷上述材料而形成。
另外，共用电极13例如由镁-金合金(摩尔比Mg∶Au＝1∶2)的薄膜形成。
另一方面，电解元件4的阴极6由通过蒸镀法形成的铂薄膜构成。
固体电解质层5的材料可以使用ナフイオン(Nafion)(注册商标，杜邦公司制)，例如可以将ナフイオン的分散液通过旋涂法涂敷而形成。ナフイオン是Perfluorosulfonic Acid/PTFE copolymer，通常是下述的化学式[化1]表示的物质。含磺酸基，并且构成高分子聚合物的氢被氟取代。ナフイオン之类的全氟聚合物的化学稳定性高。由于不易引起伴随过氧羟自由基生成的氢的拉拔，因此认为稳定。
[化1]
或者，作为ナフイオン以外的有机材料，还可以使用Poly(bis(4-sulfophenoxy)phosphazene)(下述的[化2])、Poly(vinylchloride-co-(1-methyl-4-vinylpiperazine))(下述的[化3])、Poly(2-vinylpyridine-co-styrene)，Average Mw 220000 by LS，Average Mn 130000，granular(下述的[化4])等。或者，可以使用作为离子交换树脂而利用的聚苯乙烯磺酸。虽然比起全氟聚合物稳定性差，但是对于微量的侵入水分的电解来说，稳定性差的烃系树脂也可以。
[化2]
[化3]
[化4]
此外，作为无机材料，可以使用碘化银、Li2Ti3O7、β-氧化铝、RbAg4I5、磷钨酸等。
另外，电解元件4的阳极7，和阳极6一样，由通过蒸镀法等形成的铂薄膜构成。此外，优选在阳极7上形成可以透过氧气程度的孔或槽(气体透过孔)。在其意义上，例如还可以使用作为多孔质材料的导电性石墨板等。另外，密封层8使用了环氧树脂。或者，还可以通过将由聚3氟化乙烯等构成的薄膜层压在玻璃基板2上而形成密封层8。在本实施方式中，电解元件4的阴极6、阳极7均由铂形成，因此可以通过铂的催化剂作用使电解反应更有效地进行。在使用导电性石墨板时，通过将铂微粒子担持在石墨表面上，从而可以抑制电极的成本，提高气体透过性，且可以得到有效的电解反应。
在使用上述构成的有机EL装置1时，向电解元件4的阴极6-阳极7间施加1.2V以上、50V以下(优选10V以下，如果不至少在1.2V以上，则电解不会开始)的电压。这时，如果水侵入密封层8的内部，且被固体电解质层5吸收，则水分分别离子化为H+(H3O+)、OH-。而且，H+(H3O+)离子向阴极6侧，OH-离子向阳极7侧，分别扩散，在各电极上分别成为氢气和氧气。这些气体缓慢向装置外部放出，不会成一定浓度以上。
在本实施方式的有机EL装置1中，由于电解元件4与有机EL元件3一起被密封在密封层8的内部，因此即使水侵入于密封层8的内部，水也会被电解元件4分解而变换为氧气和氢气。根据该作用，装置内部的水分浓度抑制得低，且可以防止有机EL元件3的因水分导致的特性劣化，因此可以实现可靠性优异的有机EL装置。特别是，如果始终向电解元件4的阴极6-阳极7间施加电压，则可以将装置内部的水分浓度始终抑制得低。或者，即使间歇地施加电压，如果密封层8的水分透过性十分低，则也可以将水分浓度控制为长时间低的状态。通常，有机EL装置，如果在通电时存在水分，则尤其劣化加速。从该观点考虑，至少在元件的工作时向电解元件4的电极6，7间施加电压为好。
在本实施方式的情况下，由于有机EL元件3和电解元件4叠层在玻璃基板2的一面侧，因此，可以维持高的可靠性，且可以实现有机电子设备的小型化。这时，由于电解元件4的阴极6朝有机EL元件3侧配置、阳极7朝相反侧配置，因此还可以抑制因在阳极7产生的氧导致的有机EL元件3的特性劣化。因而，优选阳极7具有气体透过性，具有高的氧透过性。
[第2实施方式]
以下，用图3说明本发明的第2实施方式。
本实施方式的有机电子设备是将作为功能元件的有机EL元件和电解元件并置在基板上的有机EL装置的例子。
图3是本实施方式的有机EL装置的剖面图。另外，在图3中，在与图1共用的构成要素上标注同样的符号，并省略详细的说明。
本实施方式的有机EL装置21，如图3所示，有机EL元件3形成在玻璃基板2的一面，电解元件4与有机EL元件3邻接形成。电解元件4的阴极6朝玻璃基板2侧配置、阳极7朝与玻璃基板2相反侧配置。而且，这些有机EL元件3和电解元件4由形成于玻璃基板2的一面侧的密封层8一体密封。
有机EL元件21的内部构成与第1实施方式相同，省略详细的说明，不过构成材料稍微不同。作为图2所示的空穴注入层的NPB薄膜通过蒸镀法形成。另外，作为空穴注入层10上的发光层11的Alq3(铝螯合络合物)薄膜通过蒸镀法形成。另外，电解元件4，代替将阴极6、固体电解质层5、阳极7依次叠层的第1实施方式的构成，将预先将铂薄膜蒸镀在ナフイオン115板的两面而分别作为阴极6、阳极7的板配置在玻璃基板2上。因而，通过将由聚3氟化乙烯等构成的薄膜层压在玻璃基板2上，从而将其作为密封层8。
在本实施方式的有机EL装置21中，也可以得到由于能够防止因水分导致的有机EL元件3的特性劣化，因此可以实现可靠性优异的有机EL装置等与第1实施方式相同的效果。
[第3实施方式]
以下，用图4～图6说明本发明的第3实施方式。
本实施方式的有机电子设备是将作为功能元件的有机TFT及被有机TFT驱动的电泳元件和电解元件分别形成在基板的相反侧的面上的电泳显示装置的例子。
图4是本实施方式的电泳显示装置的剖面图，图5是仅表示有机TFT部分的剖面图，图6是本实施方式的电泳显示装置的变形例的剖面图。另外，在图4～图6中，在与图1共用的构成要素上标注同样的符号，并省略详细的说明。
本实施方式的电泳显示装置31，如图4所示，在由聚碳酸酯、聚对苯二甲酸乙二醇酯等众所周知的塑料基板构成的有机TFT支承基板32的一面形成具备有机TFT的有源矩阵电路33，其上设置有被有源矩阵电路33驱动的电泳元件34。电泳元件34是，例如在由与上述相同的塑料基板构成的显示元件基板35上，配置有封入了电泳粒子的多个微型胶囊36的结构。而且，成为电泳元件34的设置有微型胶囊36的一侧贴合在有源矩阵电路33上的形态。另一方面，在有机TFT支承基板32的相反侧的面上设置有电解元件4，整体被密封层8密封。
有机TFT38，如图5所示，是主要使用湿式成膜法形成的开关元件，是从有机TFT支承基板32侧，源电极及漏电极39、有机半导体层40、绝缘层41、栅电极42叠层形成的、所谓顶栅结构的晶体管。另外，像素电极(未图示)对应有机TFT38而设置，且像素电极经由接触孔(未图示)与有机TFT38的漏电极39电连接。还有，虽然在本实施方式中关于顶栅结构进行说明，不过并没有限定于该结构，也可以是底栅结构。 更具体是，在有机TFT支承基板32上形成铬、钛等密接层(未图示)后，金薄膜通过光刻法进行构图，从而形成源电极及漏电极39。而且，按照包覆沟道部的方式，通过喷墨法形成例如由F8T2(Fluorene/Bithiophenecopolymer)等材料构成的有机半导体层40。然后，按照覆盖有机半导体层40的方式，通过喷墨法或旋涂法形成由聚苯乙烯(PS)、聚甲基丙烯酸甲酯(PMMA)等构成的绝缘层41，之后，通过喷墨法印刷Ag胶态溶液，从而形成栅电极42。进而，通过旋涂法在整个面形成例如PVA等水溶性聚合物膜，由此形成保护层43。在这样形成的有源矩阵电路33上，另行制作的电泳元件34朝有源矩阵电路33侧贴合微型胶囊36侧。
另一方面，另行制作在由ナフイオン115板构成的固体电解质层5的两面蒸镀铂薄膜而分别作为阴极6、阳极7的电解元件4。然后，将该电解元件4重合在有机TFT支承基板32的与有源矩阵电路33侧相反侧的面上，将它们用由聚3氟化乙烯等构成的薄膜夹入而进行层压密封，由此形成密封层8。
在本实施方式的电泳显示装置31中，可以得到由于能够防止因水分导致的有机TFT38的特性劣化，因此可以实现可靠性优异的电泳显示装置等与第1、第2实施方式相同的效果。有机TFT38也和有机EL装置一样，如果在通电时存在水分，则劣化速度加快，因此，优选至少在有机TFT38工作时向电解元件4的电极6、7间施加电压。另外，在本实施方式的情况下，由于有机TFT支承基板32、显示元件基板35、密封层8全部使用塑料材料，因此是简易的密封结构，且可靠性高，可以实现柔性显示装置。
还有，如图6所示，也可以是将电解元件4形成在电解元件支承基板45上，将其与有机TFT支承基板32贴合的构成。
作为有机半导体除了F8T2之外，可以广泛使用已知的有机半导体。例如可以举出，萘、蒽、丁省、戊省、己省、酞菁、苝、腙、三苯甲烷、二苯甲烷、芪、芳基乙烯、吡唑啉、三苯胺、三芳基胺、酞菁或它们的衍生物等低分子的有机半导体材料；或聚-N-乙烯咔唑、聚乙烯基芘、聚乙烯基蒽、聚噻吩、聚己基噻吩、聚(p-亚苯基亚乙烯基)、聚希司塔地尔亚乙烯基(ポリチニレンビニレン)、聚芳基胺、芘甲醛树脂、甲基咔唑甲醛树脂、芴-联二噻吩共聚物、芴-芳胺共聚物或它们的衍生物等高分子的有机半导体材料，可以使用其中的一种或组合2种以上而使用。或者，可以使用含噻吩、三芳胺、萘、苝、芴等的低聚物。
在这些有机半导体中，使用作为p型沟道层起作用的有机半导体，也特别有效。p型有机半导体比起n型有机半导体，相对于氧是稳定的。因而，不易受到本发明的电解元件4产生的氧的影响，因此通过电解元件4除水的效果有效地进行作用。换言之，p型有机半导体虽然受到水的影响，但由于氧的影响小，因此只要将水从侵入于元件内的大气中除去，则可以实现可靠性高的元件。在p型有机半导体中，同样由于离子化电势为4.7eV以上的有机半导体不易受到氧的影响，因此作为本发明的有机半导体是有效的。
另外，在本实施方式中，通过印刷Ag胶态液形成栅电极。被印刷的Ag胶态液通过在低温下烧成(例如120℃以下)而可以得到高的导电性。为了在塑料上形成导电性高的电极，Ag胶态溶液是极其有用的材料。一方面，Ag在水的存在下容易离子化，如果施加电压则Ag离子迁移而成为电极间的短路的原因。因此，通过以本发明的构成除去元件内部的水，在塑料上也可以形成可靠性高的电极、配线。从而，将印刷含银的胶态溶液而形成的电极、配线或含有它们的薄膜晶体管用于本发明是特别有效的。
[第4实施方式]
下面，用图7说明本发明的第4实施方式。
本实施方式的电子设备是将电泳元件和电解元件叠层在同一基板上的电泳显示装置的例子。
图7是本实施方式的电泳显示装置的剖面图。另外，在图7中，在与图4、图6共用的构成要素上标注相同的符号，并省略详细的说明。
本实施方式的电泳显示装置51，如图7所示，电解元件4设置在由聚碳酸酯、聚对苯二甲酸乙二醇酯等众所周知的塑料基板构成的氧化物薄膜晶体管(氧化物TFT)支承基板53的一面，在电解元件4上形成具备氧化物TFT的有源矩阵电路54，其上设置有电泳元件34。电泳元件34是，在显示元件基板35上配置有封入了电泳粒子的微型胶囊36的结构，成为设置有微型胶囊36的一侧贴合在有源矩阵电路54上的形态。
铂薄膜蒸镀在氧化物TFT支承基板53上而形成阳极7，通过旋涂法涂敷ナフイオン分散液而形成固体电解质5，再次蒸镀铂薄膜而形成阴极6。在其上通过旋涂法涂敷环氧树脂、聚酯树脂等绝缘体聚合物，通过处理进行不溶化从而形成基底层52。通过氧化物TFT形成在该基底层52上，制作有源矩阵电路54，电泳元件34朝有源矩阵电路54侧贴合微型胶囊36侧。由于形成氧化物TFT以后的工序是公知的，因此省略说明。
在本实施方式的电泳显示装置51中，也可以得到由于能够防止因水分导致的氧化物TFT的特性劣化，因此可以实现可靠性优异的电泳显示装置等与第3实施方式相同的效果。特别是在本实施方式的情况下，由于具有氧化物TFT的有源矩阵电路54直接叠层在电解元件4上，因此可以进一步提高因水分导致的特性劣化的防止效果。这是因为，氧化物半导体通常吸湿性高，容易受水分的影响。正如所述，由于不易受到氧的影响，因此本发明特别有效。
作为氧化物半导体，可以通过将ZnO、NiO、SnO2、TiO2、In2O5、V2O5、SrTiO3、WO2、无定形In-Ga-Zn-O(a-IGZO)、无定形Cd-Ga-O、无定形Cd-Pb-O用蒸镀法、溅射法、溶胶凝胶法等进行薄膜化而使用。
还有，本发明的技术方案并不限定于上述实施方式，在不脱离本发明的要点范围内可以进行各种变更。例如，在上述实施方式中，可以适宜变更作为功能元件所例示的有机EL元件、有机TFT等的具体的构成、材料、制造方法等。此外，虽然本发明的元件对易受水分的影响的有机功能设备特别有效，但并不一定是有机功能设备。例如，在使用了氧化物半导体的电致发光元件、薄膜晶体管元件中也有效。此外，在使用了有机半导体、氧化物半导体的太阳电池中使用本结构也同样有效。
Claims (12)
1.一种电子设备，其特征在于，
具备：
基板；
功能元件，其形成在所述基板上；
电解元件，其设置在所述基板的形成有所述功能元件的一侧，且具有固体电解质层和夹持所述固体电解质层的一对电极而构成，能够电解水；
密封构件，其密封所述功能元件和所述电解元件，
所述功能元件和所述电解元件叠层在所述基板的一面侧，
在构成所述电解元件的一对电极中，阴极朝所述功能元件侧配置，阳极朝与所述功能元件相反侧配置。
2.根据权利要求1所述的电子设备，其特征在于，
所述功能元件包含有机材料层。
3.根据权利要求1所述的电子设备，其特征在于，
所述功能元件包含氧化物半导体层。
4.根据权利要求1所述的电子设备，其特征在于，
所述阳极具有气体透过孔。
5.根据权利要求1～4中任意一项所述的电子设备，其特征在于，
所述基板和所述密封构件均由树脂材料构成。
6.根据权利要求1～4中任意一项所述的电子设备，其特征在于，
所述固体电解质层由高分子电解质材料构成。
7.根据权利要求6所述的电子设备，其特征在于，
所述高分子电解质材料含有磺酸基。
8.根据权利要求6所述的电子设备，其特征在于，
构成所述高分子电解质材料的至少一部分氢被氟取代。
9.根据权利要求1～4中任意一项所述的电子设备，其特征在于，
构成所述电解元件的电极的材料含有铂或钯。
10.一种有机电致发光装置，其特征在于，
具备：
基板；
有机电致发光元件，其包含形成在所述基板上的有机材料层；
电解元件，其设置在所述基板的形成有所述有机电致发光元件的一侧，且具有固体电解质层和夹持所述固体电解质层的一对电极而构成，能够电解水；
密封构件，其密封所述有机电致发光元件和所述电解元件，
所述有机电致发光元件和所述电解元件叠层在所述基板的一面侧，
在构成所述电解元件的一对电极中，阴极朝所述有机电致发光元件侧配置，阳极朝与所述有机电致发光元件相反侧配置。
11.根据权利要求10所述的有机电致发光装置，其特征在于，
所述有机电致发光元件具有夹着发光层对置的透明电极和反射电极，且所述电解元件叠层在所述有机电致发光元件的设置有所述反射电极的一侧。
12.一种有机薄膜半导体装置，其特征在于，
具备：
基板；
有机薄膜晶体管，其包括形成在所述基板上的有机材料层；
电解元件，其设置在所述基板的形成有所述有机薄膜晶体管的一侧，且具有固体电解质层和夹持所述固体电解质层的一对电极而构成，能够电解水；
密封构件，其密封所述有机薄膜晶体管和所述电解元件，
所述有机薄膜晶体管和所述电解元件叠层在所述基板的一面侧，
在构成所述电解元件的一对电极中，阴极朝所述有机薄膜晶体管侧配置，阳极朝与所述有机薄膜晶体管相反侧配置。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006-261997 | 2006-09-27 | ||
| JP2006261997A JP4274219B2 (ja) | 2006-09-27 | 2006-09-27 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
| JP2006261997 | 2006-09-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101154716A CN101154716A (zh) | 2008-04-02 |
| CN101154716B true CN101154716B (zh) | 2010-12-15 |
Family
ID=39256240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101542708A Expired - Fee Related CN101154716B (zh) | 2006-09-27 | 2007-09-17 | 电子设备、有机电致发光装置、有机薄膜半导体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8553312B2 (zh) |
| JP (1) | JP4274219B2 (zh) |
| KR (1) | KR101367858B1 (zh) |
| CN (1) | CN101154716B (zh) |
Families Citing this family (1797)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI445178B (zh) | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| TWI505473B (zh) * | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7928938B2 (en) | 2005-04-19 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including memory circuit, display device and electronic apparatus |
| US8629819B2 (en) | 2005-07-14 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| EP1758072A3 (en) * | 2005-08-24 | 2007-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
| EP1998375A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
| KR101117948B1 (ko) * | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
| EP1843194A1 (en) | 2006-04-06 | 2007-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, semiconductor device, and electronic appliance |
| JP5116277B2 (ja) | 2006-09-29 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| US7646015B2 (en) * | 2006-10-31 | 2010-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device and semiconductor device |
| JP5542296B2 (ja) | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
| JP5542297B2 (ja) | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
| JP4989309B2 (ja) | 2007-05-18 | 2012-08-01 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US7897482B2 (en) * | 2007-05-31 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2009010102A (ja) * | 2007-06-27 | 2009-01-15 | Gunze Ltd | 半導体素子 |
| US8354674B2 (en) * | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
| WO2009014155A1 (en) | 2007-07-25 | 2009-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device having the same |
| NO332409B1 (no) * | 2008-01-24 | 2012-09-17 | Well Technology As | Anordning og fremgangsmate for a isolere en seksjon av et bronnhull |
| US9041202B2 (en) * | 2008-05-16 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US8314765B2 (en) | 2008-06-17 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, display device, and electronic device |
| KR101545647B1 (ko) | 2008-07-10 | 2015-08-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 전자기기 |
| TWI622175B (zh) | 2008-07-31 | 2018-04-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| JP2010056541A (ja) | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| TWI570937B (zh) | 2008-07-31 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP5616038B2 (ja) * | 2008-07-31 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI500159B (zh) | 2008-07-31 | 2015-09-11 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
| JP5525778B2 (ja) * | 2008-08-08 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI424506B (zh) | 2008-08-08 | 2014-01-21 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
| TWI508282B (zh) | 2008-08-08 | 2015-11-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| JP5480554B2 (ja) | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5608347B2 (ja) * | 2008-08-08 | 2014-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| TWI569454B (zh) | 2008-09-01 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| US9082857B2 (en) | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| JP5627071B2 (ja) | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101623224B1 (ko) * | 2008-09-12 | 2016-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| WO2010029885A1 (en) * | 2008-09-12 | 2010-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101783193B1 (ko) * | 2008-09-12 | 2017-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| KR101722913B1 (ko) | 2008-09-12 | 2017-04-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| CN102881696A (zh) | 2008-09-19 | 2013-01-16 | 株式会社半导体能源研究所 | 显示装置 |
| KR102187427B1 (ko) | 2008-09-19 | 2020-12-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| CN102496628B (zh) | 2008-09-19 | 2015-09-16 | 株式会社半导体能源研究所 | 显示装置 |
| KR101622981B1 (ko) * | 2008-09-19 | 2016-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 제조방법 |
| EP2327070B1 (en) | 2008-09-19 | 2018-10-17 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
| KR101611643B1 (ko) * | 2008-10-01 | 2016-04-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| EP2172804B1 (en) | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
| WO2010038819A1 (en) | 2008-10-03 | 2010-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR20200085934A (ko) | 2008-10-03 | 2020-07-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
| EP2172977A1 (en) | 2008-10-03 | 2010-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| CN101714546B (zh) | 2008-10-03 | 2014-05-14 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
| CN101719493B (zh) * | 2008-10-08 | 2014-05-14 | 株式会社半导体能源研究所 | 显示装置 |
| JP5484853B2 (ja) * | 2008-10-10 | 2014-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101799601B1 (ko) * | 2008-10-16 | 2017-11-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 표시 장치 |
| JP5361651B2 (ja) | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8741702B2 (en) | 2008-10-24 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5616012B2 (ja) | 2008-10-24 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2010047288A1 (en) * | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductordevice |
| KR102469154B1 (ko) * | 2008-10-24 | 2022-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR101667909B1 (ko) * | 2008-10-24 | 2016-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
| EP2180518B1 (en) | 2008-10-24 | 2018-04-25 | Semiconductor Energy Laboratory Co, Ltd. | Method for manufacturing semiconductor device |
| JP5442234B2 (ja) | 2008-10-24 | 2014-03-12 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
| US8106400B2 (en) | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2010050419A1 (en) * | 2008-10-31 | 2010-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and display device |
| TWI501401B (zh) | 2008-10-31 | 2015-09-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| KR101631454B1 (ko) * | 2008-10-31 | 2016-06-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리회로 |
| KR101603303B1 (ko) | 2008-10-31 | 2016-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 도전성 산질화물 및 도전성 산질화물막의 제작 방법 |
| WO2010053060A1 (en) | 2008-11-07 | 2010-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2010135771A (ja) | 2008-11-07 | 2010-06-17 | Semiconductor Energy Lab Co Ltd | 半導体装置及び当該半導体装置の作製方法 |
| TWI535037B (zh) | 2008-11-07 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| CN101740631B (zh) * | 2008-11-07 | 2014-07-16 | 株式会社半导体能源研究所 | 半导体装置及该半导体装置的制造方法 |
| TWI655780B (zh) | 2008-11-07 | 2019-04-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| EP2184783B1 (en) * | 2008-11-07 | 2012-10-03 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and method for manufacturing the same |
| KR101432764B1 (ko) * | 2008-11-13 | 2014-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
| TWI502739B (zh) | 2008-11-13 | 2015-10-01 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| US8232947B2 (en) | 2008-11-14 | 2012-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP2010153802A (ja) | 2008-11-20 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| KR101671544B1 (ko) | 2008-11-21 | 2016-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 전자 기기 |
| TWI654754B (zh) | 2008-11-28 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| TWI585955B (zh) * | 2008-11-28 | 2017-06-01 | 半導體能源研究所股份有限公司 | 光感測器及顯示裝置 |
| US8344387B2 (en) | 2008-11-28 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101472771B1 (ko) * | 2008-12-01 | 2014-12-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| TWI613489B (zh) | 2008-12-03 | 2018-02-01 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| JP5501604B2 (ja) * | 2008-12-04 | 2014-05-28 | シャープ株式会社 | 有機薄膜トランジスタ |
| JP5491833B2 (ja) | 2008-12-05 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5615540B2 (ja) * | 2008-12-19 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN103456794B (zh) | 2008-12-19 | 2016-08-10 | 株式会社半导体能源研究所 | 晶体管的制造方法 |
| EP2515337B1 (en) * | 2008-12-24 | 2016-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| US8114720B2 (en) | 2008-12-25 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8383470B2 (en) | 2008-12-25 | 2013-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor (TFT) having a protective layer and manufacturing method thereof |
| KR101719350B1 (ko) * | 2008-12-25 | 2017-03-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US8441007B2 (en) | 2008-12-25 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| TWI475616B (zh) | 2008-12-26 | 2015-03-01 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| JP5590877B2 (ja) * | 2008-12-26 | 2014-09-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR101648927B1 (ko) * | 2009-01-16 | 2016-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US8492756B2 (en) | 2009-01-23 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8436350B2 (en) * | 2009-01-30 | 2013-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device using an oxide semiconductor with a plurality of metal clusters |
| US8367486B2 (en) | 2009-02-05 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the transistor |
| US8174021B2 (en) | 2009-02-06 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
| US8749930B2 (en) * | 2009-02-09 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Protection circuit, semiconductor device, photoelectric conversion device, and electronic device |
| CN101840936B (zh) | 2009-02-13 | 2014-10-08 | 株式会社半导体能源研究所 | 包括晶体管的半导体装置及其制造方法 |
| US8278657B2 (en) * | 2009-02-13 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device |
| US8247812B2 (en) * | 2009-02-13 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device |
| US8247276B2 (en) | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
| US8841661B2 (en) * | 2009-02-25 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof |
| US8704216B2 (en) | 2009-02-27 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8461582B2 (en) | 2009-03-05 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US20100224878A1 (en) | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US20100224880A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5504008B2 (ja) | 2009-03-06 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| EP2406826B1 (en) * | 2009-03-12 | 2017-08-23 | Semiconductor Energy Laboratory Co, Ltd. | Method for manufacturing semiconductor device |
| TWI485781B (zh) * | 2009-03-13 | 2015-05-21 | Semiconductor Energy Lab | 半導體裝置及該半導體裝置的製造方法 |
| US8450144B2 (en) * | 2009-03-26 | 2013-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI529942B (zh) | 2009-03-27 | 2016-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| KR101752640B1 (ko) | 2009-03-27 | 2017-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| KR101681884B1 (ko) | 2009-03-27 | 2016-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치, 표시장치 및 전자기기 |
| TWI485851B (zh) * | 2009-03-30 | 2015-05-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| US8338226B2 (en) * | 2009-04-02 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| TWI489628B (zh) | 2009-04-02 | 2015-06-21 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
| JP5615018B2 (ja) | 2009-04-10 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
| TWI476917B (zh) | 2009-04-16 | 2015-03-11 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
| CN102422426B (zh) * | 2009-05-01 | 2016-06-01 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| JP5751762B2 (ja) | 2009-05-21 | 2015-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5564331B2 (ja) | 2009-05-29 | 2014-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP2256814B1 (en) | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
| EP2256795B1 (en) * | 2009-05-29 | 2014-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for oxide semiconductor device |
| KR101644249B1 (ko) | 2009-06-30 | 2016-07-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
| EP3236504A1 (en) | 2009-06-30 | 2017-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101944656B1 (ko) | 2009-06-30 | 2019-04-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
| KR101810699B1 (ko) | 2009-06-30 | 2018-01-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
| US20110000175A1 (en) * | 2009-07-01 | 2011-01-06 | Husqvarna Consumer Outdoor Products N.A. Inc. | Variable speed controller |
| KR102503687B1 (ko) * | 2009-07-03 | 2023-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| JP5663214B2 (ja) * | 2009-07-03 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101476817B1 (ko) | 2009-07-03 | 2014-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터를 갖는 표시 장치 및 그 제작 방법 |
| CN102473731B (zh) | 2009-07-10 | 2015-06-17 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
| WO2011004723A1 (en) | 2009-07-10 | 2011-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method the same |
| KR20220100086A (ko) | 2009-07-10 | 2022-07-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| WO2011007675A1 (en) * | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011007682A1 (en) * | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| WO2011007677A1 (en) | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR20180112107A (ko) | 2009-07-18 | 2018-10-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치 제조 방법 |
| KR101929726B1 (ko) | 2009-07-18 | 2018-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| WO2011010541A1 (en) | 2009-07-18 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2011010545A1 (en) * | 2009-07-18 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2011010542A1 (en) * | 2009-07-23 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101904811B1 (ko) | 2009-07-24 | 2018-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101291434B1 (ko) | 2009-07-31 | 2013-08-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
| KR101716918B1 (ko) | 2009-07-31 | 2017-03-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011013523A1 (en) | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2011013502A1 (en) * | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011013596A1 (en) * | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI596741B (zh) * | 2009-08-07 | 2017-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| JP5663231B2 (ja) * | 2009-08-07 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 発光装置 |
| TWI528527B (zh) | 2009-08-07 | 2016-04-01 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置之製造方法 |
| JP5642447B2 (ja) | 2009-08-07 | 2014-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI634642B (zh) | 2009-08-07 | 2018-09-01 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| EP2284891B1 (en) | 2009-08-07 | 2019-07-24 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
| TWI746064B (zh) | 2009-08-07 | 2021-11-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| US8115883B2 (en) | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| WO2011027649A1 (en) * | 2009-09-02 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a transistor, and manufacturing method of semiconductor device |
| WO2011027656A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
| KR101746198B1 (ko) * | 2009-09-04 | 2017-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 전자기기 |
| US9805641B2 (en) * | 2009-09-04 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
| CN105810753A (zh) * | 2009-09-04 | 2016-07-27 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| WO2011027702A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| WO2011027664A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
| WO2011027676A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101791812B1 (ko) | 2009-09-04 | 2017-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| KR101988341B1 (ko) | 2009-09-04 | 2019-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 제작하기 위한 방법 |
| WO2011027701A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| WO2011033914A1 (en) | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of display device and display device |
| CN105609565B (zh) * | 2009-09-16 | 2019-02-22 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| WO2011034012A1 (en) * | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, light emitting device, semiconductor device, and electronic device |
| EP2544237B1 (en) * | 2009-09-16 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
| US9715845B2 (en) | 2009-09-16 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| KR20230165355A (ko) * | 2009-09-16 | 2023-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| WO2011033909A1 (en) * | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, display device including the driver circuit, and electronic device including the display device |
| KR102009813B1 (ko) | 2009-09-16 | 2019-08-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 이의 제조 방법 |
| WO2011037008A1 (en) * | 2009-09-24 | 2011-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device |
| WO2011036981A1 (en) | 2009-09-24 | 2011-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101740943B1 (ko) | 2009-09-24 | 2017-06-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| CN104934483B (zh) | 2009-09-24 | 2018-08-10 | 株式会社半导体能源研究所 | 半导体元件及其制造方法 |
| KR101713356B1 (ko) | 2009-09-24 | 2017-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 상기 구동 회로를 포함하는 표시 장치, 및 상기 표시 장치를 포함하는 전자 기기 |
| CN105161543A (zh) | 2009-09-24 | 2015-12-16 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| TWI512997B (zh) | 2009-09-24 | 2015-12-11 | Semiconductor Energy Lab | 半導體裝置，電源電路，和半導體裝置的製造方法 |
| KR102321565B1 (ko) | 2009-09-24 | 2021-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| WO2011037213A1 (en) * | 2009-09-24 | 2011-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN105719841B (zh) * | 2009-09-30 | 2019-05-14 | 株式会社半导体能源研究所 | 电化学电容器 |
| JP5613508B2 (ja) * | 2009-09-30 | 2014-10-22 | 株式会社半導体エネルギー研究所 | レドックスキャパシタ |
| WO2011040213A1 (en) * | 2009-10-01 | 2011-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2011043182A1 (en) | 2009-10-05 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for removing electricity and method for manufacturing semiconductor device |
| KR20120084751A (ko) | 2009-10-05 | 2012-07-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| CN105185837B (zh) | 2009-10-08 | 2018-08-03 | 株式会社半导体能源研究所 | 半导体器件、显示装置和电子电器 |
| SG178056A1 (en) * | 2009-10-08 | 2012-03-29 | Semiconductor Energy Lab | Oxide semiconductor layer and semiconductor device |
| KR102145488B1 (ko) * | 2009-10-09 | 2020-08-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| WO2011043164A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
| WO2011043194A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN103984176B (zh) | 2009-10-09 | 2016-01-20 | 株式会社半导体能源研究所 | 液晶显示装置及包括该液晶显示装置的电子设备 |
| CN107180608B (zh) * | 2009-10-09 | 2020-10-02 | 株式会社半导体能源研究所 | 移位寄存器和显示装置以及其驱动方法 |
| WO2011043162A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
| WO2011043218A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN102549638B (zh) | 2009-10-09 | 2015-04-01 | 株式会社半导体能源研究所 | 发光显示器件以及包括该发光显示器件的电子设备 |
| EP2486569B1 (en) | 2009-10-09 | 2019-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Shift register and display device |
| WO2011043206A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| EP2486593B1 (en) | 2009-10-09 | 2017-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011046003A1 (en) * | 2009-10-14 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011046048A1 (en) | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102462145B1 (ko) | 2009-10-16 | 2022-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 이를 구비한 전자 장치 |
| WO2011046015A1 (en) | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
| EP2489075A4 (en) | 2009-10-16 | 2014-06-11 | Semiconductor Energy Lab | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE |
| KR101717460B1 (ko) | 2009-10-16 | 2017-03-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기 |
| KR20170130641A (ko) * | 2009-10-21 | 2017-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 그 액정 표시 장치를 구비하는 전자기기 |
| CN102668062B (zh) | 2009-10-21 | 2014-12-10 | 株式会社半导体能源研究所 | 半导体器件 |
| KR101751908B1 (ko) | 2009-10-21 | 2017-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전압 조정 회로 |
| KR20170024130A (ko) | 2009-10-21 | 2017-03-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR101893128B1 (ko) | 2009-10-21 | 2018-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 아날로그 회로 및 반도체 장치 |
| KR101812683B1 (ko) | 2009-10-21 | 2017-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작방법 |
| CN104681568B (zh) | 2009-10-21 | 2017-11-21 | 株式会社半导体能源研究所 | 显示装置和包括显示装置的电子设备 |
| WO2011048923A1 (en) | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | E-book reader |
| GB2524419B (en) * | 2009-10-23 | 2015-10-28 | Flexenable Ltd | Electronic document reading devices |
| WO2011052351A1 (en) | 2009-10-29 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102281043B1 (ko) | 2009-10-29 | 2021-07-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011052382A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN102576708B (zh) | 2009-10-30 | 2015-09-23 | 株式会社半导体能源研究所 | 半导体装置 |
| KR101669476B1 (ko) | 2009-10-30 | 2016-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리 회로 및 반도체 장치 |
| KR101796909B1 (ko) | 2009-10-30 | 2017-12-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 비선형 소자, 표시 장치, 및 전자 기기 |
| WO2011052366A1 (en) | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Voltage regulator circuit |
| KR101740684B1 (ko) | 2009-10-30 | 2017-05-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 파워 다이오드, 정류기 및 그것을 가지는 반도체 장치 |
| KR101712340B1 (ko) * | 2009-10-30 | 2017-03-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 구동 회로를 포함하는 표시 장치, 및 표시 장치를 포함하는 전자 기기 |
| CN102668095B (zh) | 2009-10-30 | 2016-08-03 | 株式会社半导体能源研究所 | 晶体管 |
| KR20120091243A (ko) * | 2009-10-30 | 2012-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| EP2494597A4 (en) * | 2009-10-30 | 2015-03-18 | Semiconductor Energy Lab | SEMICONDUCTOR COMPONENT |
| WO2011052411A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor |
| CN102576172B (zh) * | 2009-10-30 | 2016-01-27 | 株式会社半导体能源研究所 | 液晶显示设备、其驱动方法以及包括该液晶显示设备的电子电器 |
| WO2011052437A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device including non-linear element, and electronic device including display device |
| WO2011052384A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR102484475B1 (ko) | 2009-11-06 | 2023-01-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR102066532B1 (ko) * | 2009-11-06 | 2020-01-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011055769A1 (en) * | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus |
| KR101750982B1 (ko) | 2009-11-06 | 2017-06-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| WO2011055668A1 (en) * | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011055625A1 (en) * | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and operating method thereof |
| KR101824854B1 (ko) | 2009-11-06 | 2018-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP5539846B2 (ja) | 2009-11-06 | 2014-07-02 | 株式会社半導体エネルギー研究所 | 評価方法、半導体装置の作製方法 |
| KR101727469B1 (ko) * | 2009-11-06 | 2017-04-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| WO2011055660A1 (en) | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101747158B1 (ko) | 2009-11-06 | 2017-06-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하기 위한 방법 |
| KR101824123B1 (ko) | 2009-11-06 | 2018-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011058852A1 (en) * | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101975741B1 (ko) * | 2009-11-13 | 2019-05-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 타깃 재료의 포장 방법 및 타깃의 장착 방법 |
| WO2011058864A1 (en) * | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Device including nonvolatile memory element |
| KR20170076818A (ko) * | 2009-11-13 | 2017-07-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링 타겟 및 그 제작 방법 및 트랜지스터 |
| KR102513073B1 (ko) | 2009-11-13 | 2023-03-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR20230173233A (ko) | 2009-11-13 | 2023-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
| KR101751560B1 (ko) * | 2009-11-13 | 2017-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011058913A1 (en) | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR20170072965A (ko) | 2009-11-13 | 2017-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링 타겟 및 그 제조방법, 및 트랜지스터 |
| KR101893332B1 (ko) | 2009-11-13 | 2018-08-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
| WO2011062029A1 (en) | 2009-11-18 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| KR101708607B1 (ko) | 2009-11-20 | 2017-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN102668077B (zh) | 2009-11-20 | 2015-05-13 | 株式会社半导体能源研究所 | 非易失性锁存电路和逻辑电路,以及使用其的半导体器件 |
| JP5762723B2 (ja) | 2009-11-20 | 2015-08-12 | 株式会社半導体エネルギー研究所 | 変調回路及びそれを備えた半導体装置 |
| KR20140074404A (ko) | 2009-11-20 | 2014-06-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
| KR101800854B1 (ko) * | 2009-11-20 | 2017-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
| KR101448908B1 (ko) * | 2009-11-20 | 2014-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20190124813A (ko) | 2009-11-20 | 2019-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN102668063B (zh) * | 2009-11-20 | 2015-02-18 | 株式会社半导体能源研究所 | 半导体装置 |
| KR101800852B1 (ko) | 2009-11-20 | 2017-12-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20120106766A (ko) | 2009-11-20 | 2012-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| WO2011065183A1 (en) * | 2009-11-24 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including memory cell |
| KR20180059577A (ko) | 2009-11-27 | 2018-06-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011065258A1 (en) * | 2009-11-27 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011065209A1 (en) * | 2009-11-27 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device including non-linear element, and electronic device including display device |
| KR102345456B1 (ko) | 2009-11-27 | 2021-12-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작방법 |
| KR102089200B1 (ko) | 2009-11-28 | 2020-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR101824124B1 (ko) | 2009-11-28 | 2018-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| CN102668028B (zh) | 2009-11-28 | 2015-09-02 | 株式会社半导体能源研究所 | 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法 |
| WO2011065210A1 (en) * | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
| CN102648490B (zh) * | 2009-11-30 | 2016-08-17 | 株式会社半导体能源研究所 | 液晶显示设备、用于驱动该液晶显示设备的方法、以及包括该液晶显示设备的电子设备 |
| WO2011068032A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| WO2011068022A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101800038B1 (ko) | 2009-12-04 | 2017-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| KR101840623B1 (ko) * | 2009-12-04 | 2018-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이를 포함하는 전자 기기 |
| WO2011068017A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
| WO2011068025A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Dc converter circuit and power supply circuit |
| KR20180077332A (ko) | 2009-12-04 | 2018-07-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011068028A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, semiconductor device, and method for manufacturing the same |
| JP5584103B2 (ja) | 2009-12-04 | 2014-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20120103676A (ko) * | 2009-12-04 | 2012-09-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2011139052A (ja) | 2009-12-04 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 半導体記憶装置 |
| KR20210043743A (ko) | 2009-12-04 | 2021-04-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR101291485B1 (ko) * | 2009-12-04 | 2013-07-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| KR101835300B1 (ko) * | 2009-12-08 | 2018-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR101511076B1 (ko) | 2009-12-08 | 2015-04-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR101742777B1 (ko) | 2009-12-10 | 2017-06-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 및 표시 장치 |
| CN102656683B (zh) * | 2009-12-11 | 2015-02-11 | 株式会社半导体能源研究所 | 半导体装置 |
| WO2011070929A1 (en) | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2011070887A1 (en) | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
| KR101804589B1 (ko) | 2009-12-11 | 2018-01-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR101720072B1 (ko) | 2009-12-11 | 2017-03-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치 |
| JP5727204B2 (ja) | 2009-12-11 | 2015-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2011074590A1 (en) * | 2009-12-17 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, measurement apparatus, and measurement method of relative permittivity |
| KR102275522B1 (ko) | 2009-12-18 | 2021-07-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 기기 |
| WO2011074408A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Non-volatile latch circuit and logic circuit, and semiconductor device using the same |
| CN107886916B (zh) * | 2009-12-18 | 2021-09-21 | 株式会社半导体能源研究所 | 液晶显示装置及其驱动方法 |
| US9057758B2 (en) * | 2009-12-18 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group |
| WO2011074407A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN102656625B (zh) | 2009-12-18 | 2016-08-03 | 株式会社半导体能源研究所 | 用于驱动液晶显示设备的方法 |
| WO2011074409A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN105655340B (zh) | 2009-12-18 | 2020-01-21 | 株式会社半导体能源研究所 | 半导体装置 |
| CN102725784B (zh) * | 2009-12-18 | 2016-03-23 | 株式会社半导体能源研究所 | 具有光学传感器的显示设备及其驱动方法 |
| KR20120115318A (ko) | 2009-12-23 | 2012-10-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011077916A1 (en) | 2009-12-24 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| WO2011077926A1 (en) | 2009-12-24 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| KR101613701B1 (ko) | 2009-12-25 | 2016-04-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 구동 방법 |
| WO2011077978A1 (en) | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| KR101811203B1 (ko) | 2009-12-25 | 2017-12-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 제작하기 위한 방법 |
| CN102656690B (zh) | 2009-12-25 | 2016-04-20 | 株式会社半导体能源研究所 | 半导体装置 |
| CN104716139B (zh) * | 2009-12-25 | 2018-03-30 | 株式会社半导体能源研究所 | 半导体装置 |
| EP2517355B1 (en) | 2009-12-25 | 2019-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, semiconductor device, and electronic device |
| US8441009B2 (en) * | 2009-12-25 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN102714184B (zh) | 2009-12-28 | 2016-05-18 | 株式会社半导体能源研究所 | 半导体器件 |
| WO2011081041A1 (en) | 2009-12-28 | 2011-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
| KR101921619B1 (ko) | 2009-12-28 | 2018-11-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| CN105353551A (zh) | 2009-12-28 | 2016-02-24 | 株式会社半导体能源研究所 | 液晶显示装置及电子设备 |
| KR101842413B1 (ko) * | 2009-12-28 | 2018-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101894400B1 (ko) | 2009-12-28 | 2018-09-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치와 반도체 장치 |
| JP2011145391A (ja) * | 2010-01-13 | 2011-07-28 | Seiko Epson Corp | 電気泳動表示装置及び電子機器 |
| CN102714208B (zh) | 2010-01-15 | 2015-05-20 | 株式会社半导体能源研究所 | 半导体装置 |
| WO2011086871A1 (en) * | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011086848A1 (en) | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| US8780629B2 (en) * | 2010-01-15 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| CN102696064B (zh) | 2010-01-15 | 2015-11-25 | 株式会社半导体能源研究所 | 半导体装置和电子装置 |
| KR101943807B1 (ko) | 2010-01-15 | 2019-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101698537B1 (ko) * | 2010-01-15 | 2017-01-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101816505B1 (ko) * | 2010-01-20 | 2018-01-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 표시 방법 |
| KR101791829B1 (ko) | 2010-01-20 | 2017-10-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 휴대 전자 기기 |
| CN102713999B (zh) | 2010-01-20 | 2016-01-20 | 株式会社半导体能源研究所 | 电子设备和电子系统 |
| KR101842860B1 (ko) | 2010-01-20 | 2018-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 |
| US8415731B2 (en) * | 2010-01-20 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor storage device with integrated capacitor and having transistor overlapping sections |
| KR101789975B1 (ko) | 2010-01-20 | 2017-10-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011089832A1 (en) | 2010-01-20 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving display device and liquid crystal display device |
| WO2011089842A1 (en) | 2010-01-20 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
| KR102415143B1 (ko) * | 2010-01-20 | 2022-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 휴대 전화기 |
| KR101861991B1 (ko) | 2010-01-20 | 2018-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 신호 처리 회로 및 신호 처리 회로를 구동하기 위한 방법 |
| US9984617B2 (en) | 2010-01-20 | 2018-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device including light emitting element |
| KR102174859B1 (ko) * | 2010-01-22 | 2020-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN102714209B (zh) * | 2010-01-22 | 2015-09-16 | 株式会社半导体能源研究所 | 半导体存储器件及其驱动方法 |
| KR101829309B1 (ko) | 2010-01-22 | 2018-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101815838B1 (ko) | 2010-01-24 | 2018-01-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| TWI525377B (zh) | 2010-01-24 | 2016-03-11 | 半導體能源研究所股份有限公司 | 顯示裝置 |
| KR101878224B1 (ko) | 2010-01-24 | 2018-07-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치와 이의 제조 방법 |
| KR101299256B1 (ko) * | 2010-01-29 | 2013-08-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
| KR20120120330A (ko) | 2010-01-29 | 2012-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011093151A1 (en) | 2010-01-29 | 2011-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the same |
| WO2011096277A1 (en) * | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
| KR101926336B1 (ko) | 2010-02-05 | 2019-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101822962B1 (ko) * | 2010-02-05 | 2018-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20120117915A (ko) * | 2010-02-05 | 2012-10-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011096286A1 (en) | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor and semiconductor device |
| US8436403B2 (en) | 2010-02-05 | 2013-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor provided with sidewall and electronic appliance |
| WO2011096153A1 (en) | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR101819197B1 (ko) | 2010-02-05 | 2018-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제조 방법 |
| KR102402342B1 (ko) | 2010-02-05 | 2022-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| KR101921618B1 (ko) | 2010-02-05 | 2018-11-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
| US9391209B2 (en) | 2010-02-05 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011099342A1 (en) | 2010-02-10 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
| US8947337B2 (en) | 2010-02-11 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| WO2011099360A1 (en) | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| CN102763156B (zh) * | 2010-02-12 | 2015-11-25 | 株式会社半导体能源研究所 | 液晶显示装置和电子装置 |
| KR102129413B1 (ko) | 2010-02-12 | 2020-07-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 구동 방법 |
| KR101830196B1 (ko) | 2010-02-12 | 2018-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 구동 방법 |
| KR101924318B1 (ko) | 2010-02-12 | 2018-12-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 구동 방법 |
| US8617920B2 (en) * | 2010-02-12 | 2013-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011099368A1 (en) * | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
| KR101838130B1 (ko) | 2010-02-12 | 2018-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작방법 |
| CN102742002B (zh) * | 2010-02-12 | 2015-01-28 | 株式会社半导体能源研究所 | 半导体器件及其驱动方法 |
| KR102070537B1 (ko) | 2010-02-18 | 2020-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 장치 |
| CN105786268B (zh) | 2010-02-19 | 2019-03-12 | 株式会社半导体能源研究所 | 显示设备及其驱动方法 |
| KR20190102090A (ko) | 2010-02-19 | 2019-09-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 및 이를 이용한 표시 장치 |
| KR101939713B1 (ko) | 2010-02-19 | 2019-01-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20120121931A (ko) * | 2010-02-19 | 2012-11-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR101889285B1 (ko) * | 2010-02-19 | 2018-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 메모리 장치, 그 구동 방법, 및 반도체 장치 제작 방법 |
| WO2011102228A1 (en) | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method of semiconductor device |
| KR101848684B1 (ko) | 2010-02-19 | 2018-04-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 장치 |
| KR101832119B1 (ko) | 2010-02-19 | 2018-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011102233A1 (en) * | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101780748B1 (ko) | 2010-02-19 | 2017-09-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복조회로 및 복조회로를 이용한 ｒｆｉｄ 태그 |
| JP5740169B2 (ja) * | 2010-02-19 | 2015-06-24 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
| KR102455879B1 (ko) | 2010-02-23 | 2022-10-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| WO2011105198A1 (en) | 2010-02-26 | 2011-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN113540253A (zh) | 2010-02-26 | 2021-10-22 | 株式会社半导体能源研究所 | 制造半导体装置的方法 |
| US9000438B2 (en) | 2010-02-26 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR20130009978A (ko) * | 2010-02-26 | 2013-01-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 소자의 제조 방법 및 성막 장치 |
| KR101733765B1 (ko) * | 2010-02-26 | 2017-05-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 표시장치의 구동 방법 |
| WO2011105310A1 (en) * | 2010-02-26 | 2011-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101803552B1 (ko) * | 2010-02-26 | 2017-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비하는 전자 서적 |
| CN102782859B (zh) * | 2010-02-26 | 2015-07-29 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| CN107045235A (zh) | 2010-02-26 | 2017-08-15 | 株式会社半导体能源研究所 | 液晶显示装置 |
| WO2011108367A1 (en) | 2010-03-02 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Boosting circuit and rfid tag including boosting circuit |
| CN105245218B (zh) | 2010-03-02 | 2019-01-22 | 株式会社半导体能源研究所 | 脉冲信号输出电路和移位寄存器 |
| DE112011100756B4 (de) | 2010-03-02 | 2016-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Impulssignal-Ausgangsschaltung und Schieberegister |
| KR101838628B1 (ko) * | 2010-03-02 | 2018-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
| WO2011108475A1 (en) * | 2010-03-04 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and semiconductor device |
| KR20130008037A (ko) * | 2010-03-05 | 2013-01-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하는 방법 |
| WO2011108374A1 (en) * | 2010-03-05 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| KR101929190B1 (ko) | 2010-03-05 | 2018-12-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101878206B1 (ko) * | 2010-03-05 | 2018-07-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법 |
| TWI594173B (zh) * | 2010-03-08 | 2017-08-01 | 半導體能源研究所股份有限公司 | 電子裝置及電子系統 |
| WO2011111522A1 (en) * | 2010-03-08 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20130007597A (ko) * | 2010-03-08 | 2013-01-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 제작하는 방법 |
| WO2011111549A1 (en) | 2010-03-08 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101898297B1 (ko) | 2010-03-08 | 2018-09-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 구동 방법 |
| WO2011111504A1 (en) | 2010-03-08 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and electronic system |
| DE112011100841B4 (de) | 2010-03-08 | 2021-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und verfahren zur herstellung der halbleitervorrichtung |
| CN102804380B (zh) * | 2010-03-12 | 2015-11-25 | 株式会社半导体能源研究所 | 半导体装置 |
| WO2011111508A1 (en) * | 2010-03-12 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving input circuit and method for driving input-output device |
| DE112011100886T5 (de) | 2010-03-12 | 2012-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Ansteuerverfahren für Anzeigeeinrichtung |
| WO2011111506A1 (en) | 2010-03-12 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving circuit and method for driving display device |
| CN102822978B (zh) * | 2010-03-12 | 2015-07-22 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| US8900362B2 (en) * | 2010-03-12 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of gallium oxide single crystal |
| WO2011114866A1 (en) * | 2010-03-17 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| WO2011114868A1 (en) | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101840797B1 (ko) | 2010-03-19 | 2018-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 메모리 장치 |
| US20110227082A1 (en) | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011114867A1 (en) * | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method of semiconductor device |
| WO2011114919A1 (en) | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011118351A1 (en) * | 2010-03-25 | 2011-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20130062919A (ko) * | 2010-03-26 | 2013-06-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하는 방법 |
| JP5731244B2 (ja) * | 2010-03-26 | 2015-06-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN102822979B (zh) * | 2010-03-26 | 2015-08-26 | 株式会社半导体能源研究所 | 半导体器件 |
| WO2011118741A1 (en) * | 2010-03-26 | 2011-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN105304502B (zh) | 2010-03-26 | 2018-07-03 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| WO2011122299A1 (en) | 2010-03-31 | 2011-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
| WO2011122514A1 (en) | 2010-03-31 | 2011-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Power supply device and driving method thereof |
| KR20130069583A (ko) | 2010-03-31 | 2013-06-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 필드 시퀀셜 구동형 표시 장치 |
| CN102844873B (zh) | 2010-03-31 | 2015-06-17 | 株式会社半导体能源研究所 | 半导体显示装置 |
| CN102884477B (zh) | 2010-03-31 | 2015-11-25 | 株式会社半导体能源研究所 | 液晶显示设备及其驱动方法 |
| CN102844872B (zh) | 2010-04-02 | 2016-08-24 | 株式会社半导体能源研究所 | 半导体装置 |
| US9147768B2 (en) | 2010-04-02 | 2015-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor and a metal oxide film |
| US9190522B2 (en) | 2010-04-02 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor |
| KR102134294B1 (ko) | 2010-04-02 | 2020-07-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9196739B2 (en) | 2010-04-02 | 2015-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor film and metal oxide film |
| US8884282B2 (en) | 2010-04-02 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011125453A1 (en) | 2010-04-07 | 2011-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Transistor |
| KR101884031B1 (ko) | 2010-04-07 | 2018-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
| WO2011125688A1 (en) | 2010-04-09 | 2011-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for driving the same |
| KR101465192B1 (ko) | 2010-04-09 | 2014-11-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101321833B1 (ko) | 2010-04-09 | 2013-10-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체 메모리 장치 |
| WO2011125806A1 (en) | 2010-04-09 | 2011-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US8653514B2 (en) | 2010-04-09 | 2014-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8207025B2 (en) | 2010-04-09 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| WO2011125456A1 (en) | 2010-04-09 | 2011-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5744366B2 (ja) | 2010-04-12 | 2015-07-08 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US8854583B2 (en) | 2010-04-12 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and liquid crystal display device |
| WO2011129233A1 (en) | 2010-04-16 | 2011-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101881729B1 (ko) | 2010-04-16 | 2018-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 성막 방법 및 반도체 장치를 제작하기 위한 방법 |
| KR20130061678A (ko) | 2010-04-16 | 2013-06-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전원 회로 |
| JP2011237418A (ja) | 2010-04-16 | 2011-11-24 | Semiconductor Energy Lab Co Ltd | 電流測定方法、半導体装置の検査方法、半導体装置、および特性評価用回路 |
| US8692243B2 (en) | 2010-04-20 | 2014-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101800844B1 (ko) | 2010-04-23 | 2017-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| KR101854421B1 (ko) | 2010-04-23 | 2018-05-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| WO2011132556A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR20130045418A (ko) | 2010-04-23 | 2013-05-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| WO2011132591A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN104465408B (zh) | 2010-04-23 | 2017-09-15 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
| KR101887336B1 (ko) | 2010-04-23 | 2018-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 구동 방법 |
| US9537043B2 (en) | 2010-04-23 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| WO2011135999A1 (en) | 2010-04-27 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US8890555B2 (en) | 2010-04-28 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for measuring transistor |
| US9697788B2 (en) | 2010-04-28 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| WO2011135987A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9349325B2 (en) | 2010-04-28 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| KR101879570B1 (ko) | 2010-04-28 | 2018-07-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 그 제작 방법 |
| WO2011136018A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
| US9478185B2 (en) | 2010-05-12 | 2016-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device and display method thereof |
| US9064473B2 (en) | 2010-05-12 | 2015-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device and display method thereof |
| JP5797449B2 (ja) | 2010-05-13 | 2015-10-21 | 株式会社半導体エネルギー研究所 | 半導体装置の評価方法 |
| KR101806271B1 (ko) | 2010-05-14 | 2017-12-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| US8664658B2 (en) | 2010-05-14 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011142371A1 (en) | 2010-05-14 | 2011-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI511236B (zh) | 2010-05-14 | 2015-12-01 | Semiconductor Energy Lab | 半導體裝置 |
| WO2011145738A1 (en) | 2010-05-20 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving semiconductor device |
| US9490368B2 (en) | 2010-05-20 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US8624239B2 (en) | 2010-05-20 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8416622B2 (en) | 2010-05-20 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor |
| US9496405B2 (en) | 2010-05-20 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer |
| WO2011145484A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101872927B1 (ko) | 2010-05-21 | 2018-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8629438B2 (en) | 2010-05-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011145707A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| WO2011145537A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US8906756B2 (en) | 2010-05-21 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2011145634A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011145633A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011145468A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| JP5714973B2 (ja) | 2010-05-21 | 2015-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5852793B2 (ja) | 2010-05-21 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| WO2011145632A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| CN102906980B (zh) | 2010-05-21 | 2015-08-19 | 株式会社半导体能源研究所 | 半导体装置及显示装置 |
| JP5766012B2 (ja) | 2010-05-21 | 2015-08-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| KR20130082091A (ko) | 2010-05-21 | 2013-07-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP5749975B2 (ja) | 2010-05-28 | 2015-07-15 | 株式会社半導体エネルギー研究所 | 光検出装置、及び、タッチパネル |
| US8895375B2 (en) | 2010-06-01 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor and method for manufacturing the same |
| US8779433B2 (en) | 2010-06-04 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011152254A1 (en) | 2010-06-04 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011152286A1 (en) | 2010-06-04 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101894897B1 (ko) | 2010-06-04 | 2018-09-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011155295A1 (en) | 2010-06-10 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Dc/dc converter, power supply circuit, and semiconductor device |
| CN102939659B (zh) | 2010-06-11 | 2016-08-17 | 株式会社半导体能源研究所 | 半导体器件及半导体器件的制造方法 |
| WO2011155302A1 (en) | 2010-06-11 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8610180B2 (en) | 2010-06-11 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Gas sensor and method for manufacturing the gas sensor |
| JP5797471B2 (ja) | 2010-06-16 | 2015-10-21 | 株式会社半導体エネルギー研究所 | 入出力装置 |
| US9209314B2 (en) | 2010-06-16 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
| JP5823740B2 (ja) | 2010-06-16 | 2015-11-25 | 株式会社半導体エネルギー研究所 | 入出力装置 |
| WO2011158703A1 (en) | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8552425B2 (en) | 2010-06-18 | 2013-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011158704A1 (en) | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8637802B2 (en) | 2010-06-18 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Photosensor, semiconductor device including photosensor, and light measurement method using photosensor |
| WO2011162147A1 (en) | 2010-06-23 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011162104A1 (en) | 2010-06-25 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| KR20120000499A (ko) | 2010-06-25 | 2012-01-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 및 반도체 장치 |
| US8912016B2 (en) | 2010-06-25 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method and test method of semiconductor device |
| US9437454B2 (en) | 2010-06-29 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Wiring board, semiconductor device, and manufacturing methods thereof |
| WO2012002104A1 (en) | 2010-06-30 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8441010B2 (en) | 2010-07-01 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101801960B1 (ko) | 2010-07-01 | 2017-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 구동 방법 |
| JP5771079B2 (ja) | 2010-07-01 | 2015-08-26 | 株式会社半導体エネルギー研究所 | 撮像装置 |
| JP5792524B2 (ja) | 2010-07-02 | 2015-10-14 | 株式会社半導体エネルギー研究所 | 装置 |
| KR20130090405A (ko) | 2010-07-02 | 2013-08-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
| KR20130030295A (ko) | 2010-07-02 | 2013-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US9336739B2 (en) | 2010-07-02 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US8642380B2 (en) | 2010-07-02 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| WO2012002186A1 (en) | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101995851B1 (ko) | 2010-07-02 | 2019-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8605059B2 (en) | 2010-07-02 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Input/output device and driving method thereof |
| TWI541782B (zh) | 2010-07-02 | 2016-07-11 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| WO2012008390A1 (en) | 2010-07-16 | 2012-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN103003934B (zh) | 2010-07-16 | 2015-07-01 | 株式会社半导体能源研究所 | 半导体器件 |
| US8785241B2 (en) | 2010-07-16 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2012008286A1 (en) | 2010-07-16 | 2012-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8519387B2 (en) | 2010-07-26 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing |
| KR102143469B1 (ko) | 2010-07-27 | 2020-08-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP5735872B2 (ja) | 2010-07-27 | 2015-06-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI565001B (zh) | 2010-07-28 | 2017-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的驅動方法 |
| JP5846789B2 (ja) | 2010-07-29 | 2016-01-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2012014786A1 (en) | 2010-07-30 | 2012-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semicondcutor device and manufacturing method thereof |
| US8537600B2 (en) | 2010-08-04 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Low off-state leakage current semiconductor memory device |
| KR101842181B1 (ko) | 2010-08-04 | 2018-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8928466B2 (en) | 2010-08-04 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5739257B2 (ja) | 2010-08-05 | 2015-06-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5671418B2 (ja) | 2010-08-06 | 2015-02-18 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
| US8467232B2 (en) | 2010-08-06 | 2013-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8792284B2 (en) | 2010-08-06 | 2014-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor memory device |
| KR102006586B1 (ko) | 2010-08-06 | 2019-08-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8803164B2 (en) | 2010-08-06 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Solid-state image sensing device and semiconductor display device |
| US8422272B2 (en) | 2010-08-06 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| TWI545587B (zh) | 2010-08-06 | 2016-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置及驅動半導體裝置的方法 |
| WO2012017843A1 (en) | 2010-08-06 | 2012-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit |
| US8467231B2 (en) | 2010-08-06 | 2013-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| TWI555128B (zh) | 2010-08-06 | 2016-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的驅動方法 |
| JP5832181B2 (ja) | 2010-08-06 | 2015-12-16 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| TWI605549B (zh) | 2010-08-06 | 2017-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI524347B (zh) | 2010-08-06 | 2016-03-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其驅動方法 |
| US9343480B2 (en) | 2010-08-16 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9129703B2 (en) | 2010-08-16 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor memory device |
| TWI587405B (zh) | 2010-08-16 | 2017-06-11 | 半導體能源研究所股份有限公司 | 半導體裝置之製造方法 |
| JP5848912B2 (ja) | 2010-08-16 | 2016-01-27 | 株式会社半導体エネルギー研究所 | 液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器 |
| TWI508294B (zh) | 2010-08-19 | 2015-11-11 | Semiconductor Energy Lab | 半導體裝置 |
| US8759820B2 (en) | 2010-08-20 | 2014-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8508276B2 (en) | 2010-08-25 | 2013-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including latch circuit |
| US8883555B2 (en) | 2010-08-25 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, manufacturing method of electronic device, and sputtering target |
| US8685787B2 (en) | 2010-08-25 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP5727892B2 (ja) | 2010-08-26 | 2015-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2013009285A (ja) | 2010-08-26 | 2013-01-10 | Semiconductor Energy Lab Co Ltd | 信号処理回路及びその駆動方法 |
| US9058047B2 (en) | 2010-08-26 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5674594B2 (ja) | 2010-08-27 | 2015-02-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の駆動方法 |
| KR20120020073A (ko) | 2010-08-27 | 2012-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 설계 방법 |
| US8603841B2 (en) | 2010-08-27 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of semiconductor device and light-emitting display device |
| KR101928897B1 (ko) | 2010-08-27 | 2018-12-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치, 반도체 장치 |
| JP5763474B2 (ja) | 2010-08-27 | 2015-08-12 | 株式会社半導体エネルギー研究所 | 光センサ |
| JP5806043B2 (ja) | 2010-08-27 | 2015-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8450123B2 (en) | 2010-08-27 | 2013-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Oxygen diffusion evaluation method of oxide film stacked body |
| US8593858B2 (en) | 2010-08-31 | 2013-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of semiconductor device |
| US8634228B2 (en) | 2010-09-02 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of semiconductor device |
| US8575610B2 (en) | 2010-09-02 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| KR20130102581A (ko) | 2010-09-03 | 2013-09-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계 효과 트랜지스터 및 반도체 장치의 제조 방법 |
| WO2012029638A1 (en) | 2010-09-03 | 2012-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2012029596A1 (en) | 2010-09-03 | 2012-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR20130099074A (ko) | 2010-09-03 | 2013-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링 타겟 및 반도체 장치의 제작 방법 |
| US8487844B2 (en) | 2010-09-08 | 2013-07-16 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and electronic device including the same |
| US8520426B2 (en) | 2010-09-08 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor device |
| JP2012256819A (ja) | 2010-09-08 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US8766253B2 (en) | 2010-09-10 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101824125B1 (ko) | 2010-09-10 | 2018-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| KR20120026970A (ko) | 2010-09-10 | 2012-03-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 발광 장치 |
| US8797487B2 (en) | 2010-09-10 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, liquid crystal display device, and manufacturing method thereof |
| US9142568B2 (en) | 2010-09-10 | 2015-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting display device |
| US9546416B2 (en) | 2010-09-13 | 2017-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming crystalline oxide semiconductor film |
| US8664097B2 (en) | 2010-09-13 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US8592879B2 (en) | 2010-09-13 | 2013-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8546161B2 (en) | 2010-09-13 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and liquid crystal display device |
| US9496743B2 (en) | 2010-09-13 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Power receiving device and wireless power feed system |
| US8558960B2 (en) | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
| US8835917B2 (en) | 2010-09-13 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
| TWI608486B (zh) | 2010-09-13 | 2017-12-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| KR101952235B1 (ko) | 2010-09-13 | 2019-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| KR101932576B1 (ko) | 2010-09-13 | 2018-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP5815337B2 (ja) | 2010-09-13 | 2015-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2012256821A (ja) | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8647919B2 (en) | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
| JP5827520B2 (ja) | 2010-09-13 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
| KR101872926B1 (ko) | 2010-09-13 | 2018-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI670711B (zh) | 2010-09-14 | 2019-09-01 | 日商半導體能源研究所股份有限公司 | 記憶體裝置和半導體裝置 |
| US9230994B2 (en) | 2010-09-15 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP2012256012A (ja) | 2010-09-15 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| WO2012035984A1 (en) | 2010-09-15 | 2012-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| WO2012035975A1 (en) | 2010-09-15 | 2012-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
| US8767443B2 (en) | 2010-09-22 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method for inspecting the same |
| KR101856722B1 (ko) | 2010-09-22 | 2018-05-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 파워 절연 게이트형 전계 효과 트랜지스터 |
| US8792260B2 (en) | 2010-09-27 | 2014-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Rectifier circuit and semiconductor device using the same |
| TWI574259B (zh) | 2010-09-29 | 2017-03-11 | 半導體能源研究所股份有限公司 | 半導體記憶體裝置和其驅動方法 |
| TWI539456B (zh) | 2010-10-05 | 2016-06-21 | 半導體能源研究所股份有限公司 | 半導體記憶體裝置及其驅動方法 |
| TWI556317B (zh) | 2010-10-07 | 2016-11-01 | 半導體能源研究所股份有限公司 | 薄膜元件、半導體裝置以及它們的製造方法 |
| US8716646B2 (en) | 2010-10-08 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for operating the same |
| US8679986B2 (en) | 2010-10-14 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US8803143B2 (en) | 2010-10-20 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor including buffer layers with high resistivity |
| TWI565079B (zh) | 2010-10-20 | 2017-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| TWI543158B (zh) | 2010-10-25 | 2016-07-21 | 半導體能源研究所股份有限公司 | 半導體儲存裝置及其驅動方法 |
| KR101924231B1 (ko) | 2010-10-29 | 2018-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
| KR101952456B1 (ko) | 2010-10-29 | 2019-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치 |
| JP5771505B2 (ja) | 2010-10-29 | 2015-09-02 | 株式会社半導体エネルギー研究所 | 受信回路 |
| JP5857970B2 (ja) | 2010-11-02 | 2016-02-10 | 宇部興産株式会社 | （アミドアミノアルカン）金属化合物、及び当該金属化合物を用いた金属含有薄膜の製造方法 |
| US8916866B2 (en) | 2010-11-03 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8957468B2 (en) | 2010-11-05 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Variable capacitor and liquid crystal display device |
| WO2012060202A1 (en) | 2010-11-05 | 2012-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9087744B2 (en) | 2010-11-05 | 2015-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving transistor |
| WO2012060253A1 (en) | 2010-11-05 | 2012-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI555205B (zh) | 2010-11-05 | 2016-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| JP6010291B2 (ja) | 2010-11-05 | 2016-10-19 | 株式会社半導体エネルギー研究所 | 表示装置の駆動方法 |
| US8569754B2 (en) | 2010-11-05 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8902637B2 (en) | 2010-11-08 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device comprising inverting amplifier circuit and driving method thereof |
| TWI654764B (zh) | 2010-11-11 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TWI541981B (zh) | 2010-11-12 | 2016-07-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US8854865B2 (en) | 2010-11-24 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US8936965B2 (en) | 2010-11-26 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8823092B2 (en) | 2010-11-30 | 2014-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8816425B2 (en) | 2010-11-30 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI562379B (en) | 2010-11-30 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing semiconductor device |
| US8629496B2 (en) | 2010-11-30 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8809852B2 (en) | 2010-11-30 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same |
| US9103724B2 (en) | 2010-11-30 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device |
| US8461630B2 (en) | 2010-12-01 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5908263B2 (ja) | 2010-12-03 | 2016-04-26 | 株式会社半導体エネルギー研究所 | Ｄｃ−ｄｃコンバータ |
| KR101995082B1 (ko) | 2010-12-03 | 2019-07-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| TWI590249B (zh) | 2010-12-03 | 2017-07-01 | 半導體能源研究所股份有限公司 | 積體電路，其驅動方法，及半導體裝置 |
| US8957462B2 (en) | 2010-12-09 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate |
| TWI534905B (zh) | 2010-12-10 | 2016-05-21 | 半導體能源研究所股份有限公司 | 顯示裝置及顯示裝置之製造方法 |
| JP2012256020A (ja) | 2010-12-15 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその駆動方法 |
| US8730416B2 (en) | 2010-12-17 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US8894825B2 (en) | 2010-12-17 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing the same, manufacturing semiconductor device |
| JP2012142562A (ja) | 2010-12-17 | 2012-07-26 | Semiconductor Energy Lab Co Ltd | 半導体記憶装置 |
| US9202822B2 (en) | 2010-12-17 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9024317B2 (en) | 2010-12-24 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
| JP6030298B2 (ja) | 2010-12-28 | 2016-11-24 | 株式会社半導体エネルギー研究所 | 緩衝記憶装置及び信号処理回路 |
| WO2012090799A1 (en) | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2012151453A (ja) | 2010-12-28 | 2012-08-09 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の駆動方法 |
| JP5784479B2 (ja) | 2010-12-28 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5975635B2 (ja) | 2010-12-28 | 2016-08-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9048142B2 (en) | 2010-12-28 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5864054B2 (ja) | 2010-12-28 | 2016-02-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2012090973A1 (en) | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2012090974A1 (en) | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5973165B2 (ja) | 2010-12-28 | 2016-08-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9443984B2 (en) | 2010-12-28 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5993141B2 (ja) | 2010-12-28 | 2016-09-14 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JP5852874B2 (ja) | 2010-12-28 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI562142B (en) | 2011-01-05 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Storage element, storage device, and signal processing circuit |
| JP5977523B2 (ja) | 2011-01-12 | 2016-08-24 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
| TWI535032B (zh) | 2011-01-12 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| US8536571B2 (en) | 2011-01-12 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| TWI570809B (zh) | 2011-01-12 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US8912080B2 (en) | 2011-01-12 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of the semiconductor device |
| US8421071B2 (en) | 2011-01-13 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| US8575678B2 (en) | 2011-01-13 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device with floating gate |
| KR102026718B1 (ko) | 2011-01-14 | 2019-09-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억장치, 반도체 장치, 검출 방법 |
| JP5859839B2 (ja) | 2011-01-14 | 2016-02-16 | 株式会社半導体エネルギー研究所 | 記憶素子の駆動方法、及び、記憶素子 |
| TWI657565B (zh) | 2011-01-14 | 2019-04-21 | 日商半導體能源研究所股份有限公司 | 半導體記憶裝置 |
| US8916867B2 (en) | 2011-01-20 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor element and semiconductor device |
| TWI614747B (zh) | 2011-01-26 | 2018-02-11 | 半導體能源研究所股份有限公司 | 記憶體裝置及半導體裝置 |
| WO2012102182A1 (en) | 2011-01-26 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI602303B (zh) | 2011-01-26 | 2017-10-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| WO2012102183A1 (en) | 2011-01-26 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI657580B (zh) | 2011-01-26 | 2019-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TWI570920B (zh) | 2011-01-26 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP5798933B2 (ja) | 2011-01-26 | 2015-10-21 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
| TWI525619B (zh) | 2011-01-27 | 2016-03-11 | 半導體能源研究所股份有限公司 | 記憶體電路 |
| KR20130140824A (ko) | 2011-01-27 | 2013-12-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20210034703A (ko) | 2011-01-28 | 2021-03-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 및 반도체 장치 |
| US9494829B2 (en) | 2011-01-28 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and liquid crystal display device containing the same |
| KR101899375B1 (ko) | 2011-01-28 | 2018-09-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8634230B2 (en) | 2011-01-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| US8513773B2 (en) | 2011-02-02 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Capacitor and semiconductor device including dielectric and N-type semiconductor |
| TWI520273B (zh) | 2011-02-02 | 2016-02-01 | 半導體能源研究所股份有限公司 | 半導體儲存裝置 |
| JP6000560B2 (ja) | 2011-02-02 | 2016-09-28 | 株式会社半導体エネルギー研究所 | 半導体メモリ装置 |
| US9799773B2 (en) | 2011-02-02 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
| US9431400B2 (en) | 2011-02-08 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method for manufacturing the same |
| US8787083B2 (en) | 2011-02-10 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Memory circuit |
| TWI569041B (zh) | 2011-02-14 | 2017-02-01 | 半導體能源研究所股份有限公司 | 顯示裝置 |
| US8975680B2 (en) | 2011-02-17 | 2015-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method manufacturing semiconductor memory device |
| KR101899880B1 (ko) | 2011-02-17 | 2018-09-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그래머블 ｌｓｉ |
| US8643007B2 (en) | 2011-02-23 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8709920B2 (en) | 2011-02-24 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9443455B2 (en) | 2011-02-25 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a plurality of pixels |
| US9691772B2 (en) | 2011-03-03 | 2017-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including memory cell which includes transistor and capacitor |
| US8841664B2 (en) | 2011-03-04 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5898527B2 (ja) | 2011-03-04 | 2016-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9646829B2 (en) | 2011-03-04 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US8785933B2 (en) | 2011-03-04 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8659015B2 (en) | 2011-03-04 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9023684B2 (en) | 2011-03-04 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8659957B2 (en) | 2011-03-07 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
| JP5827145B2 (ja) | 2011-03-08 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
| US9099437B2 (en) | 2011-03-08 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8625085B2 (en) | 2011-03-08 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Defect evaluation method for semiconductor |
| US8772849B2 (en) | 2011-03-10 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US8541781B2 (en) | 2011-03-10 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2012121265A1 (en) | 2011-03-10 | 2012-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and method for manufacturing the same |
| TWI658516B (zh) | 2011-03-11 | 2019-05-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| TWI521612B (zh) | 2011-03-11 | 2016-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| JP2012209543A (ja) | 2011-03-11 | 2012-10-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US8760903B2 (en) | 2011-03-11 | 2014-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Storage circuit |
| JP5933300B2 (ja) | 2011-03-16 | 2016-06-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5933897B2 (ja) | 2011-03-18 | 2016-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR101995682B1 (ko) | 2011-03-18 | 2019-07-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법 |
| US8859330B2 (en) | 2011-03-23 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5839474B2 (ja) | 2011-03-24 | 2016-01-06 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
| TWI545652B (zh) | 2011-03-25 | 2016-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US8956944B2 (en) | 2011-03-25 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8686416B2 (en) | 2011-03-25 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
| US8987728B2 (en) | 2011-03-25 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
| US9012904B2 (en) | 2011-03-25 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI538215B (zh) | 2011-03-25 | 2016-06-11 | 半導體能源研究所股份有限公司 | 場效電晶體及包含該場效電晶體之記憶體與半導體電路 |
| US9219159B2 (en) | 2011-03-25 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming oxide semiconductor film and method for manufacturing semiconductor device |
| JP6053098B2 (ja) | 2011-03-28 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8927329B2 (en) | 2011-03-30 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor device with improved electronic properties |
| JP5879165B2 (ja) | 2011-03-30 | 2016-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI567735B (zh) | 2011-03-31 | 2017-01-21 | 半導體能源研究所股份有限公司 | 記憶體電路，記憶體單元，及訊號處理電路 |
| US9082860B2 (en) | 2011-03-31 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8686486B2 (en) | 2011-03-31 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| JP5982147B2 (ja) | 2011-04-01 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US8541266B2 (en) | 2011-04-01 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9960278B2 (en) | 2011-04-06 | 2018-05-01 | Yuhei Sato | Manufacturing method of semiconductor device |
| US9093538B2 (en) | 2011-04-08 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9012905B2 (en) | 2011-04-08 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same |
| JP2012256406A (ja) | 2011-04-08 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置、及び当該記憶装置を用いた半導体装置 |
| TWI567736B (zh) | 2011-04-08 | 2017-01-21 | 半導體能源研究所股份有限公司 | 記憶體元件及信號處理電路 |
| JP5883699B2 (ja) | 2011-04-13 | 2016-03-15 | 株式会社半導体エネルギー研究所 | プログラマブルｌｓｉ |
| US9478668B2 (en) | 2011-04-13 | 2016-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
| US8854867B2 (en) | 2011-04-13 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and driving method of the memory device |
| JP6045176B2 (ja) | 2011-04-15 | 2016-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9070776B2 (en) | 2011-04-15 | 2015-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US8779488B2 (en) | 2011-04-15 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US8878174B2 (en) | 2011-04-15 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit |
| JP6001900B2 (ja) | 2011-04-21 | 2016-10-05 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
| US8878288B2 (en) | 2011-04-22 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8809854B2 (en) | 2011-04-22 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9331206B2 (en) | 2011-04-22 | 2016-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Oxide material and semiconductor device |
| US8916868B2 (en) | 2011-04-22 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US10079053B2 (en) | 2011-04-22 | 2018-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and memory device |
| US8941958B2 (en) | 2011-04-22 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8932913B2 (en) | 2011-04-22 | 2015-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP5946683B2 (ja) | 2011-04-22 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9006803B2 (en) | 2011-04-22 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing thereof |
| CN105931967B (zh) | 2011-04-27 | 2019-05-03 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| KR101919056B1 (ko) | 2011-04-28 | 2018-11-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 회로 |
| US8681533B2 (en) | 2011-04-28 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Memory circuit, signal processing circuit, and electronic device |
| US9935622B2 (en) | 2011-04-28 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Comparator and semiconductor device including comparator |
| US8729545B2 (en) | 2011-04-28 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US8785923B2 (en) | 2011-04-29 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI525615B (zh) | 2011-04-29 | 2016-03-11 | 半導體能源研究所股份有限公司 | 半導體儲存裝置 |
| KR101963457B1 (ko) | 2011-04-29 | 2019-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 및 그 구동 방법 |
| US9111795B2 (en) | 2011-04-29 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with capacitor connected to memory element through oxide semiconductor film |
| US9614094B2 (en) | 2011-04-29 | 2017-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer and method for driving the same |
| US8476927B2 (en) | 2011-04-29 | 2013-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
| US8848464B2 (en) | 2011-04-29 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
| US8446171B2 (en) | 2011-04-29 | 2013-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing unit |
| TWI792087B (zh) | 2011-05-05 | 2023-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| WO2012153473A1 (en) | 2011-05-06 | 2012-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9117701B2 (en) | 2011-05-06 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101874144B1 (ko) | 2011-05-06 | 2018-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
| US8709922B2 (en) | 2011-05-06 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8809928B2 (en) | 2011-05-06 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, and method for manufacturing the semiconductor device |
| TWI568181B (zh) | 2011-05-06 | 2017-01-21 | 半導體能源研究所股份有限公司 | 邏輯電路及半導體裝置 |
| US9443844B2 (en) | 2011-05-10 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Gain cell semiconductor memory device and driving method thereof |
| US8946066B2 (en) | 2011-05-11 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| TWI541978B (zh) | 2011-05-11 | 2016-07-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置之驅動方法 |
| US8847233B2 (en) | 2011-05-12 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film |
| TWI557711B (zh) | 2011-05-12 | 2016-11-11 | 半導體能源研究所股份有限公司 | 顯示裝置的驅動方法 |
| US9105749B2 (en) | 2011-05-13 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9093539B2 (en) | 2011-05-13 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN103548263B (zh) | 2011-05-13 | 2016-12-07 | 株式会社半导体能源研究所 | 半导体装置 |
| US8897049B2 (en) | 2011-05-13 | 2014-11-25 | Semiconductor Energy Laboratories Co., Ltd. | Semiconductor device and memory device including semiconductor device |
| TWI536502B (zh) | 2011-05-13 | 2016-06-01 | 半導體能源研究所股份有限公司 | 記憶體電路及電子裝置 |
| JP5886128B2 (ja) | 2011-05-13 | 2016-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2012157472A1 (en) | 2011-05-13 | 2012-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9048788B2 (en) | 2011-05-13 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a photoelectric conversion portion |
| JP6110075B2 (ja) | 2011-05-13 | 2017-04-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR101952570B1 (ko) | 2011-05-13 | 2019-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2012157463A1 (en) | 2011-05-13 | 2012-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9954110B2 (en) | 2011-05-13 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and electronic device |
| CN107316865B (zh) | 2011-05-16 | 2021-02-02 | 株式会社半导体能源研究所 | 可编程逻辑装置 |
| TWI570891B (zh) | 2011-05-17 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI571058B (zh) | 2011-05-18 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置與驅動半導體裝置之方法 |
| TWI552150B (zh) | 2011-05-18 | 2016-10-01 | 半導體能源研究所股份有限公司 | 半導體儲存裝置 |
| US8709889B2 (en) | 2011-05-19 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and manufacturing method thereof |
| US8779799B2 (en) | 2011-05-19 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit |
| US8581625B2 (en) | 2011-05-19 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
| KR102081792B1 (ko) | 2011-05-19 | 2020-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 연산회로 및 연산회로의 구동방법 |
| JP6006975B2 (ja) | 2011-05-19 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR102093909B1 (ko) | 2011-05-19 | 2020-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 회로 및 회로의 구동 방법 |
| US8837203B2 (en) | 2011-05-19 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101991735B1 (ko) | 2011-05-19 | 2019-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| JP5892852B2 (ja) | 2011-05-20 | 2016-03-23 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス |
| TWI570730B (zh) | 2011-05-20 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6013682B2 (ja) | 2011-05-20 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
| JP5947099B2 (ja) | 2011-05-20 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI559683B (zh) | 2011-05-20 | 2016-11-21 | 半導體能源研究所股份有限公司 | 半導體積體電路 |
| JP6030334B2 (ja) | 2011-05-20 | 2016-11-24 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| TWI614995B (zh) | 2011-05-20 | 2018-02-11 | 半導體能源研究所股份有限公司 | 鎖相迴路及使用此鎖相迴路之半導體裝置 |
| WO2012161059A1 (en) | 2011-05-20 | 2012-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| JP6091083B2 (ja) | 2011-05-20 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| WO2012160963A1 (en) | 2011-05-20 | 2012-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN102789808B (zh) | 2011-05-20 | 2018-03-06 | 株式会社半导体能源研究所 | 存储器装置和用于驱动存储器装置的方法 |
| TWI557739B (zh) | 2011-05-20 | 2016-11-11 | 半導體能源研究所股份有限公司 | 半導體積體電路 |
| JP5820336B2 (ja) | 2011-05-20 | 2015-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6013680B2 (ja) | 2011-05-20 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5820335B2 (ja) | 2011-05-20 | 2015-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6082189B2 (ja) | 2011-05-20 | 2017-02-15 | 株式会社半導体エネルギー研究所 | 記憶装置及び信号処理回路 |
| US8508256B2 (en) | 2011-05-20 | 2013-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit |
| JP5951351B2 (ja) | 2011-05-20 | 2016-07-13 | 株式会社半導体エネルギー研究所 | 加算器及び全加算器 |
| JP5936908B2 (ja) | 2011-05-20 | 2016-06-22 | 株式会社半導体エネルギー研究所 | パリティビット出力回路およびパリティチェック回路 |
| JP5886496B2 (ja) | 2011-05-20 | 2016-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI616873B (zh) | 2011-05-20 | 2018-03-01 | 半導體能源研究所股份有限公司 | 儲存裝置及信號處理電路 |
| US20120298998A1 (en) | 2011-05-25 | 2012-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device |
| US9171840B2 (en) | 2011-05-26 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101912971B1 (ko) | 2011-05-26 | 2018-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 분주 회로 및 분주 회로를 이용한 반도체 장치 |
| US8610482B2 (en) | 2011-05-27 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Trimming circuit and method for driving trimming circuit |
| US9467047B2 (en) | 2011-05-31 | 2016-10-11 | Semiconductor Energy Laboratory Co., Ltd. | DC-DC converter, power source circuit, and semiconductor device |
| JP5912844B2 (ja) | 2011-05-31 | 2016-04-27 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス |
| US8669781B2 (en) | 2011-05-31 | 2014-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20230014891A (ko) | 2011-06-08 | 2023-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법 |
| JP5890251B2 (ja) | 2011-06-08 | 2016-03-22 | 株式会社半導体エネルギー研究所 | 通信方法 |
| JP2013016243A (ja) | 2011-06-09 | 2013-01-24 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
| US9112036B2 (en) | 2011-06-10 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP6005401B2 (ja) | 2011-06-10 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6104522B2 (ja) | 2011-06-10 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8891285B2 (en) | 2011-06-10 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US8958263B2 (en) | 2011-06-10 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9299852B2 (en) | 2011-06-16 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8804405B2 (en) | 2011-06-16 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| TWI557910B (zh) | 2011-06-16 | 2016-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9166055B2 (en) | 2011-06-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR20130007426A (ko) | 2011-06-17 | 2013-01-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US8901554B2 (en) | 2011-06-17 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including channel formation region including oxide semiconductor |
| US9099885B2 (en) | 2011-06-17 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Wireless power feeding system |
| SG11201504734VA (en) | 2011-06-17 | 2015-07-30 | Semiconductor Energy Lab | Semiconductor device and method for manufacturing the same |
| US8673426B2 (en) | 2011-06-29 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit |
| US8878589B2 (en) | 2011-06-30 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US9130044B2 (en) | 2011-07-01 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9385238B2 (en) | 2011-07-08 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor using oxide semiconductor |
| US9318506B2 (en) | 2011-07-08 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9496138B2 (en) | 2011-07-08 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device |
| KR102014876B1 (ko) | 2011-07-08 | 2019-08-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US9490241B2 (en) | 2011-07-08 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a first inverter and a second inverter |
| US8952377B2 (en) | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8748886B2 (en) | 2011-07-08 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US9214474B2 (en) | 2011-07-08 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US8847220B2 (en) | 2011-07-15 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8836626B2 (en) | 2011-07-15 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| US9200952B2 (en) | 2011-07-15 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a photodetector and an analog arithmetic circuit |
| JP2013042117A (ja) | 2011-07-15 | 2013-02-28 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US8946812B2 (en) | 2011-07-21 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9012993B2 (en) | 2011-07-22 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6013685B2 (ja) | 2011-07-22 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8643008B2 (en) | 2011-07-22 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| DE112012003074T5 (de) | 2011-07-22 | 2014-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Lichtemissionsvorrichtung |
| US8716073B2 (en) | 2011-07-22 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing oxide semiconductor film and method for manufacturing semiconductor device |
| US8994019B2 (en) | 2011-08-05 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8718224B2 (en) | 2011-08-05 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Pulse signal output circuit and shift register |
| JP6006572B2 (ja) | 2011-08-18 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI575494B (zh) | 2011-08-19 | 2017-03-21 | 半導體能源研究所股份有限公司 | 半導體裝置的驅動方法 |
| JP6128775B2 (ja) | 2011-08-19 | 2017-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6116149B2 (ja) | 2011-08-24 | 2017-04-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9525152B2 (en) * | 2011-08-26 | 2016-12-20 | Sumitomo Chemical Company Limited | Permeable electrodes for high performance organic electronic devices |
| TWI761910B (zh) | 2011-08-29 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US9252279B2 (en) | 2011-08-31 | 2016-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9660092B2 (en) | 2011-08-31 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor including oxygen release layer |
| JP6016532B2 (ja) | 2011-09-07 | 2016-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6050054B2 (ja) | 2011-09-09 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8802493B2 (en) | 2011-09-13 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor device |
| JP5825744B2 (ja) | 2011-09-15 | 2015-12-02 | 株式会社半導体エネルギー研究所 | パワー絶縁ゲート型電界効果トランジスタ |
| US9082663B2 (en) | 2011-09-16 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2013039126A1 (en) | 2011-09-16 | 2013-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5832399B2 (ja) | 2011-09-16 | 2015-12-16 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US8952379B2 (en) | 2011-09-16 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN103022012B (zh) | 2011-09-21 | 2017-03-01 | 株式会社半导体能源研究所 | 半导体存储装置 |
| KR101976228B1 (ko) | 2011-09-22 | 2019-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광 검출 장치 및 광 검출 장치의 구동 방법 |
| WO2013042562A1 (en) | 2011-09-22 | 2013-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8841675B2 (en) | 2011-09-23 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Minute transistor |
| US9431545B2 (en) | 2011-09-23 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR102108572B1 (ko) | 2011-09-26 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| JP2013084333A (ja) | 2011-09-28 | 2013-05-09 | Semiconductor Energy Lab Co Ltd | シフトレジスタ回路 |
| KR101506303B1 (ko) | 2011-09-29 | 2015-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
| SG11201505099TA (en) | 2011-09-29 | 2015-08-28 | Semiconductor Energy Lab | Semiconductor device |
| TWI605590B (zh) | 2011-09-29 | 2017-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| WO2013047629A1 (en) | 2011-09-29 | 2013-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5806905B2 (ja) | 2011-09-30 | 2015-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8982607B2 (en) | 2011-09-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and signal processing circuit |
| US20130087784A1 (en) | 2011-10-05 | 2013-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2013093561A (ja) | 2011-10-07 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜及び半導体装置 |
| US10014068B2 (en) | 2011-10-07 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2013083758A (ja) * | 2011-10-07 | 2013-05-09 | Sony Corp | 表示装置およびその製造方法、並びに電子機器 |
| JP6022880B2 (ja) | 2011-10-07 | 2016-11-09 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| US9287405B2 (en) | 2011-10-13 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor |
| JP5912394B2 (ja) | 2011-10-13 | 2016-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9117916B2 (en) | 2011-10-13 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor film |
| JP6026839B2 (ja) | 2011-10-13 | 2016-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8637864B2 (en) | 2011-10-13 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US9018629B2 (en) | 2011-10-13 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN104025301B (zh) | 2011-10-14 | 2017-01-18 | 株式会社半导体能源研究所 | 半导体装置 |
| KR20130040706A (ko) | 2011-10-14 | 2013-04-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| KR20130043063A (ko) | 2011-10-19 | 2013-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| TWI567985B (zh) | 2011-10-21 | 2017-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP6226518B2 (ja) | 2011-10-24 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102067051B1 (ko) | 2011-10-24 | 2020-01-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| KR101976212B1 (ko) | 2011-10-24 | 2019-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| JP6082562B2 (ja) | 2011-10-27 | 2017-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20130046357A (ko) | 2011-10-27 | 2013-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20140086954A (ko) | 2011-10-28 | 2014-07-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR102012981B1 (ko) | 2011-11-09 | 2019-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP5933895B2 (ja) | 2011-11-10 | 2016-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
| US8878177B2 (en) | 2011-11-11 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN103918025B (zh) | 2011-11-11 | 2016-12-21 | 株式会社半导体能源研究所 | 信号线驱动电路以及液晶显示装置 |
| US9082861B2 (en) | 2011-11-11 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Transistor with oxide semiconductor channel having protective layer |
| JP6122275B2 (ja) | 2011-11-11 | 2017-04-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP6076038B2 (ja) | 2011-11-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US8796682B2 (en) | 2011-11-11 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| US8969130B2 (en) | 2011-11-18 | 2015-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof |
| KR20130055521A (ko) | 2011-11-18 | 2013-05-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치 |
| US8951899B2 (en) | 2011-11-25 | 2015-02-10 | Semiconductor Energy Laboratory | Method for manufacturing semiconductor device |
| JP6059968B2 (ja) | 2011-11-25 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置、及び液晶表示装置 |
| JP6099368B2 (ja) | 2011-11-25 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JP6125211B2 (ja) | 2011-11-25 | 2017-05-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8962386B2 (en) | 2011-11-25 | 2015-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9057126B2 (en) | 2011-11-29 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing sputtering target and method for manufacturing semiconductor device |
| US9076871B2 (en) | 2011-11-30 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6147992B2 (ja) | 2011-11-30 | 2017-06-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102072244B1 (ko) | 2011-11-30 | 2020-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US20130137232A1 (en) | 2011-11-30 | 2013-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming oxide semiconductor film and method for manufacturing semiconductor device |
| US8956929B2 (en) | 2011-11-30 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| TWI639150B (zh) | 2011-11-30 | 2018-10-21 | 日商半導體能源研究所股份有限公司 | 半導體顯示裝置 |
| TWI621183B (zh) | 2011-12-01 | 2018-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| US8981367B2 (en) | 2011-12-01 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6050662B2 (ja) | 2011-12-02 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| EP2786404A4 (en) | 2011-12-02 | 2015-07-15 | Semiconductor Energy Lab | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| JP2013137853A (ja) | 2011-12-02 | 2013-07-11 | Semiconductor Energy Lab Co Ltd | 記憶装置および記憶装置の駆動方法 |
| US9257422B2 (en) | 2011-12-06 | 2016-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit and method for driving signal processing circuit |
| US9076505B2 (en) | 2011-12-09 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| US10002968B2 (en) | 2011-12-14 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
| JP6105266B2 (ja) | 2011-12-15 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| WO2013089115A1 (en) | 2011-12-15 | 2013-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8785258B2 (en) | 2011-12-20 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2013149953A (ja) | 2011-12-20 | 2013-08-01 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| US8907392B2 (en) | 2011-12-22 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including stacked sub memory cells |
| JP2013130802A (ja) | 2011-12-22 | 2013-07-04 | Semiconductor Energy Lab Co Ltd | 半導体装置、画像表示装置、記憶装置、及び電子機器 |
| US8748240B2 (en) | 2011-12-22 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8704221B2 (en) | 2011-12-23 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2013094547A1 (en) | 2011-12-23 | 2013-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6012450B2 (ja) | 2011-12-23 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
| JP6033071B2 (ja) | 2011-12-23 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI569446B (zh) | 2011-12-23 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置 |
| US8796683B2 (en) | 2011-12-23 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI580189B (zh) | 2011-12-23 | 2017-04-21 | 半導體能源研究所股份有限公司 | 位準位移電路及半導體積體電路 |
| JP6053490B2 (ja) | 2011-12-23 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2013099537A1 (en) | 2011-12-26 | 2013-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Motion recognition device |
| TWI584383B (zh) | 2011-12-27 | 2017-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102100425B1 (ko) | 2011-12-27 | 2020-04-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| KR102103913B1 (ko) | 2012-01-10 | 2020-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US8836555B2 (en) | 2012-01-18 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Circuit, sensor circuit, and semiconductor device using the sensor circuit |
| US8969867B2 (en) | 2012-01-18 | 2015-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9040981B2 (en) | 2012-01-20 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9099560B2 (en) | 2012-01-20 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102296696B1 (ko) | 2012-01-23 | 2021-09-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9653614B2 (en) | 2012-01-23 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR20220088814A (ko) | 2012-01-25 | 2022-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| JP6091905B2 (ja) | 2012-01-26 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8956912B2 (en) | 2012-01-26 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9006733B2 (en) | 2012-01-26 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing thereof |
| US9419146B2 (en) | 2012-01-26 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI642193B (zh) | 2012-01-26 | 2018-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| TWI561951B (en) | 2012-01-30 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Power supply circuit |
| TWI604609B (zh) | 2012-02-02 | 2017-11-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102101167B1 (ko) | 2012-02-03 | 2020-04-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9362417B2 (en) | 2012-02-03 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9196741B2 (en) | 2012-02-03 | 2015-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8916424B2 (en) | 2012-02-07 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9859114B2 (en) | 2012-02-08 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device with an oxygen-controlling insulating layer |
| JP6125850B2 (ja) | 2012-02-09 | 2017-05-10 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| JP5981157B2 (ja) | 2012-02-09 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US20130207111A1 (en) | 2012-02-09 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device |
| US9112037B2 (en) | 2012-02-09 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8817516B2 (en) | 2012-02-17 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Memory circuit and semiconductor device |
| JP2014063557A (ja) | 2012-02-24 | 2014-04-10 | Semiconductor Energy Lab Co Ltd | 記憶装置及び半導体装置 |
| US20130221345A1 (en) | 2012-02-28 | 2013-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8988152B2 (en) | 2012-02-29 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9553200B2 (en) | 2012-02-29 | 2017-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9312257B2 (en) | 2012-02-29 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6151530B2 (ja) | 2012-02-29 | 2017-06-21 | 株式会社半導体エネルギー研究所 | イメージセンサ、カメラ、及び監視システム |
| US8975917B2 (en) | 2012-03-01 | 2015-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
| JP2013183001A (ja) | 2012-03-01 | 2013-09-12 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP6046514B2 (ja) | 2012-03-01 | 2016-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9735280B2 (en) | 2012-03-02 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film |
| US9287370B2 (en) | 2012-03-02 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same |
| US9176571B2 (en) | 2012-03-02 | 2015-11-03 | Semiconductor Energy Laboratories Co., Ltd. | Microprocessor and method for driving microprocessor |
| US8754693B2 (en) | 2012-03-05 | 2014-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Latch circuit and semiconductor device |
| JP6100559B2 (ja) | 2012-03-05 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
| US8995218B2 (en) | 2012-03-07 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8981370B2 (en) | 2012-03-08 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN107340509B (zh) | 2012-03-09 | 2020-04-14 | 株式会社半导体能源研究所 | 半导体装置的驱动方法 |
| CN104170001B (zh) | 2012-03-13 | 2017-03-01 | 株式会社半导体能源研究所 | 发光装置及其驱动方法 |
| US9058892B2 (en) | 2012-03-14 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and shift register |
| JP6168795B2 (ja) | 2012-03-14 | 2017-07-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9117409B2 (en) | 2012-03-14 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer |
| KR102108248B1 (ko) | 2012-03-14 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막, 트랜지스터, 및 반도체 장치 |
| US9541386B2 (en) | 2012-03-21 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Distance measurement device and distance measurement system |
| JP6169376B2 (ja) | 2012-03-28 | 2017-07-26 | 株式会社半導体エネルギー研究所 | 電池管理ユニット、保護回路、蓄電装置 |
| US9324449B2 (en) | 2012-03-28 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device |
| US9349849B2 (en) | 2012-03-28 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the semiconductor device |
| KR102044725B1 (ko) | 2012-03-29 | 2019-11-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전원 제어 장치 |
| JP2013229013A (ja) | 2012-03-29 | 2013-11-07 | Semiconductor Energy Lab Co Ltd | アレイコントローラ及びストレージシステム |
| US9786793B2 (en) | 2012-03-29 | 2017-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements |
| JP6139187B2 (ja) | 2012-03-29 | 2017-05-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8941113B2 (en) | 2012-03-30 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, semiconductor device, and manufacturing method of semiconductor element |
| US8999773B2 (en) | 2012-04-05 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Processing method of stacked-layer film and manufacturing method of semiconductor device |
| US8901556B2 (en) | 2012-04-06 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, method for manufacturing semiconductor device, and semiconductor device |
| US9711110B2 (en) | 2012-04-06 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising grayscale conversion portion and display portion |
| US9793444B2 (en) | 2012-04-06 | 2017-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| JP2013232885A (ja) | 2012-04-06 | 2013-11-14 | Semiconductor Energy Lab Co Ltd | 半導体リレー |
| JP5975907B2 (ja) | 2012-04-11 | 2016-08-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2013236068A (ja) | 2012-04-12 | 2013-11-21 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| US9208849B2 (en) | 2012-04-12 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving semiconductor device, and electronic device |
| US9030232B2 (en) | 2012-04-13 | 2015-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Isolator circuit and semiconductor device |
| JP6059566B2 (ja) | 2012-04-13 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6128906B2 (ja) | 2012-04-13 | 2017-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102330543B1 (ko) | 2012-04-13 | 2021-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6143423B2 (ja) | 2012-04-16 | 2017-06-07 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| JP6076612B2 (ja) | 2012-04-17 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6001308B2 (ja) | 2012-04-17 | 2016-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9219164B2 (en) | 2012-04-20 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide semiconductor channel |
| US9029863B2 (en) | 2012-04-20 | 2015-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9006024B2 (en) | 2012-04-25 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9230683B2 (en) | 2012-04-25 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US9236408B2 (en) | 2012-04-25 | 2016-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device including photodiode |
| US9285848B2 (en) | 2012-04-27 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Power reception control device, power reception device, power transmission and reception system, and electronic device |
| US8860022B2 (en) | 2012-04-27 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
| JP6199583B2 (ja) | 2012-04-27 | 2017-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9331689B2 (en) | 2012-04-27 | 2016-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Power supply circuit and semiconductor device including the same |
| US9048323B2 (en) | 2012-04-30 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6100071B2 (ja) | 2012-04-30 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6228381B2 (ja) | 2012-04-30 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9007090B2 (en) | 2012-05-01 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of driving semiconductor device |
| US9703704B2 (en) | 2012-05-01 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6035195B2 (ja) | 2012-05-01 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6227890B2 (ja) | 2012-05-02 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 信号処理回路および制御回路 |
| US9261943B2 (en) | 2012-05-02 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| KR102025722B1 (ko) | 2012-05-02 | 2019-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 온도 센서 회로, 및 온도 센서 회로를 사용한 반도체 장치 |
| JP6100076B2 (ja) | 2012-05-02 | 2017-03-22 | 株式会社半導体エネルギー研究所 | プロセッサ |
| JP6243136B2 (ja) | 2012-05-02 | 2017-12-06 | 株式会社半導体エネルギー研究所 | スイッチングコンバータ |
| WO2013164958A1 (en) | 2012-05-02 | 2013-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
| US8866510B2 (en) | 2012-05-02 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20130125717A (ko) | 2012-05-09 | 2013-11-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 구동 방법 |
| KR102069158B1 (ko) | 2012-05-10 | 2020-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법 |
| KR102551443B1 (ko) | 2012-05-10 | 2023-07-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102295737B1 (ko) | 2012-05-10 | 2021-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 |
| DE102013207324A1 (de) | 2012-05-11 | 2013-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und elektronisches Gerät |
| KR102087443B1 (ko) | 2012-05-11 | 2020-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 구동 방법 |
| US8994891B2 (en) | 2012-05-16 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and touch panel |
| US8929128B2 (en) | 2012-05-17 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Storage device and writing method of the same |
| US9817032B2 (en) | 2012-05-23 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Measurement device |
| KR102164990B1 (ko) | 2012-05-25 | 2020-10-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 소자의 구동 방법 |
| JP6050721B2 (ja) | 2012-05-25 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6250955B2 (ja) | 2012-05-25 | 2017-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
| KR102059218B1 (ko) | 2012-05-25 | 2019-12-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그래머블 로직 디바이스 및 반도체 장치 |
| JP2014003594A (ja) | 2012-05-25 | 2014-01-09 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその駆動方法 |
| US9147706B2 (en) | 2012-05-29 | 2015-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having sensor circuit having amplifier circuit |
| JP6377317B2 (ja) | 2012-05-30 | 2018-08-22 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス |
| US9048265B2 (en) | 2012-05-31 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising oxide semiconductor layer |
| JP6158588B2 (ja) | 2012-05-31 | 2017-07-05 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US8995607B2 (en) | 2012-05-31 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Pulse signal output circuit and shift register |
| KR102119914B1 (ko) | 2012-05-31 | 2020-06-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US8785928B2 (en) | 2012-05-31 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN104380473B (zh) | 2012-05-31 | 2017-10-13 | 株式会社半导体能源研究所 | 半导体装置 |
| US8872174B2 (en) | 2012-06-01 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP6108960B2 (ja) | 2012-06-01 | 2017-04-05 | 株式会社半導体エネルギー研究所 | 半導体装置、処理装置 |
| WO2013180016A1 (en) | 2012-06-01 | 2013-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and alarm device |
| US9916793B2 (en) | 2012-06-01 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving the same |
| US9135182B2 (en) | 2012-06-01 | 2015-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Central processing unit and driving method thereof |
| US9153699B2 (en) | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
| US8901557B2 (en) | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9059219B2 (en) | 2012-06-27 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| KR102161077B1 (ko) | 2012-06-29 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI596778B (zh) | 2012-06-29 | 2017-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| KR102082794B1 (ko) | 2012-06-29 | 2020-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법, 및 표시 장치 |
| CN110581070B (zh) | 2012-06-29 | 2022-12-20 | 株式会社半导体能源研究所 | 半导体装置 |
| US8873308B2 (en) | 2012-06-29 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit |
| US9742378B2 (en) | 2012-06-29 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit and semiconductor device |
| US9083327B2 (en) | 2012-07-06 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
| US9190525B2 (en) | 2012-07-06 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer |
| US9054678B2 (en) | 2012-07-06 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| KR102099262B1 (ko) | 2012-07-11 | 2020-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치, 및 액정 표시 장치의 구동 방법 |
| JP2014032399A (ja) | 2012-07-13 | 2014-02-20 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP6006558B2 (ja) | 2012-07-17 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置及びその製造方法 |
| DE112013007837B3 (de) | 2012-07-20 | 2023-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
| JP6185311B2 (ja) | 2012-07-20 | 2017-08-23 | 株式会社半導体エネルギー研究所 | 電源制御回路、及び信号処理回路 |
| KR102475812B1 (ko) | 2012-07-20 | 2022-12-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
| KR102505680B1 (ko) | 2012-07-20 | 2023-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 및 표시 장치를 포함하는 전자 장치 |
| JP2014042004A (ja) | 2012-07-26 | 2014-03-06 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| KR20140013931A (ko) | 2012-07-26 | 2014-02-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
| JP6224931B2 (ja) | 2012-07-27 | 2017-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2014045175A (ja) | 2012-08-02 | 2014-03-13 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP6134598B2 (ja) | 2012-08-02 | 2017-05-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102243843B1 (ko) | 2012-08-03 | 2021-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체 적층막 및 반도체 장치 |
| WO2014021356A1 (en) | 2012-08-03 | 2014-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9885108B2 (en) | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
| US10557192B2 (en) | 2012-08-07 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for using sputtering target and method for forming oxide film |
| JP2014057298A (ja) | 2012-08-10 | 2014-03-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の駆動方法 |
| US9929276B2 (en) | 2012-08-10 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2014199899A (ja) | 2012-08-10 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6211843B2 (ja) | 2012-08-10 | 2017-10-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8937307B2 (en) | 2012-08-10 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6220597B2 (ja) | 2012-08-10 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN108305895B (zh) | 2012-08-10 | 2021-08-03 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| TWI581404B (zh) | 2012-08-10 | 2017-05-01 | 半導體能源研究所股份有限公司 | 半導體裝置以及該半導體裝置的驅動方法 |
| KR102171650B1 (ko) | 2012-08-10 | 2020-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US9245958B2 (en) | 2012-08-10 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2014057296A (ja) | 2012-08-10 | 2014-03-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の駆動方法 |
| US8872120B2 (en) | 2012-08-23 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and method for driving the same |
| KR102069683B1 (ko) | 2012-08-24 | 2020-01-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치 |
| US9625764B2 (en) | 2012-08-28 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| KR102161078B1 (ko) | 2012-08-28 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작 방법 |
| KR20140029202A (ko) | 2012-08-28 | 2014-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| DE102013216824A1 (de) | 2012-08-28 | 2014-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| TWI657539B (zh) | 2012-08-31 | 2019-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2014034820A1 (en) | 2012-09-03 | 2014-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Microcontroller |
| US8947158B2 (en) | 2012-09-03 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| DE102013217278B4 (de) | 2012-09-12 | 2017-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung |
| WO2014042102A1 (en) | 2012-09-13 | 2014-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9018624B2 (en) | 2012-09-13 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
| US8981372B2 (en) | 2012-09-13 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
| TWI644437B (zh) | 2012-09-14 | 2018-12-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US8927985B2 (en) | 2012-09-20 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2014046222A1 (en) | 2012-09-24 | 2014-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI746200B (zh) | 2012-09-24 | 2021-11-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102226090B1 (ko) | 2012-10-12 | 2021-03-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 및 반도체 장치의 제조 장치 |
| JP6290576B2 (ja) | 2012-10-12 | 2018-03-07 | 株式会社半導体エネルギー研究所 | 液晶表示装置及びその駆動方法 |
| JP6351947B2 (ja) | 2012-10-12 | 2018-07-04 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| TWI681233B (zh) | 2012-10-12 | 2020-01-01 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法 |
| TWI591966B (zh) | 2012-10-17 | 2017-07-11 | 半導體能源研究所股份有限公司 | 可編程邏輯裝置及可編程邏輯裝置的驅動方法 |
| JP2014082388A (ja) | 2012-10-17 | 2014-05-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| KR102094568B1 (ko) | 2012-10-17 | 2020-03-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그의 제작 방법 |
| KR102102589B1 (ko) | 2012-10-17 | 2020-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그램 가능한 논리 장치 |
| WO2014061535A1 (en) | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5951442B2 (ja) | 2012-10-17 | 2016-07-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6059501B2 (ja) | 2012-10-17 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9166021B2 (en) | 2012-10-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2014061761A1 (en) | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Microcontroller and method for manufacturing the same |
| JP6283191B2 (ja) | 2012-10-17 | 2018-02-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6021586B2 (ja) | 2012-10-17 | 2016-11-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| JP6204145B2 (ja) | 2012-10-23 | 2017-09-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102130184B1 (ko) | 2012-10-24 | 2020-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6300489B2 (ja) | 2012-10-24 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2014065343A1 (en) | 2012-10-24 | 2014-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI637517B (zh) | 2012-10-24 | 2018-10-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102279459B1 (ko) | 2012-10-24 | 2021-07-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2014065389A1 (en) | 2012-10-25 | 2014-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Central control system |
| JP6219562B2 (ja) | 2012-10-30 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
| CN104769842B (zh) | 2012-11-06 | 2017-10-31 | 株式会社半导体能源研究所 | 半导体装置以及其驱动方法 |
| TWI649794B (zh) | 2012-11-08 | 2019-02-01 | 日商半導體能源研究所股份有限公司 | 金屬氧化物膜及形成金屬氧化物膜的方法 |
| JP6220641B2 (ja) | 2012-11-15 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI608616B (zh) | 2012-11-15 | 2017-12-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI605593B (zh) | 2012-11-15 | 2017-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI620323B (zh) | 2012-11-16 | 2018-04-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI613813B (zh) | 2012-11-16 | 2018-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6285150B2 (ja) | 2012-11-16 | 2018-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6317059B2 (ja) | 2012-11-16 | 2018-04-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
| TWI627483B (zh) | 2012-11-28 | 2018-06-21 | 半導體能源研究所股份有限公司 | 顯示裝置及電視接收機 |
| KR102148549B1 (ko) | 2012-11-28 | 2020-08-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| US9263531B2 (en) | 2012-11-28 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film, film formation method thereof, and semiconductor device |
| TWI703723B (zh) | 2012-11-28 | 2020-09-01 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
| US9412764B2 (en) | 2012-11-28 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
| KR102526635B1 (ko) | 2012-11-30 | 2023-04-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9153649B2 (en) | 2012-11-30 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for evaluating semiconductor device |
| JP2014130336A (ja) | 2012-11-30 | 2014-07-10 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US9246011B2 (en) | 2012-11-30 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI624949B (zh) | 2012-11-30 | 2018-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US9594281B2 (en) | 2012-11-30 | 2017-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US9406810B2 (en) | 2012-12-03 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6320009B2 (ja) | 2012-12-03 | 2018-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| KR102207028B1 (ko) | 2012-12-03 | 2021-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6321028B2 (ja) * | 2012-12-05 | 2018-05-09 | メルク パテント ゲーエムベーハー | 酸素イオンポンプを備えた電子装置 |
| JP6254834B2 (ja) | 2012-12-06 | 2017-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9577446B2 (en) | 2012-12-13 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Power storage system and power storage device storing data for the identifying power storage device |
| TWI611419B (zh) | 2012-12-24 | 2018-01-11 | 半導體能源研究所股份有限公司 | 可程式邏輯裝置及半導體裝置 |
| WO2014103901A1 (en) | 2012-12-25 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9905585B2 (en) | 2012-12-25 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising capacitor |
| KR102241249B1 (ko) | 2012-12-25 | 2021-04-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 저항 소자, 표시 장치, 및 전자기기 |
| DE112013006214T5 (de) | 2012-12-25 | 2015-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| US9437273B2 (en) | 2012-12-26 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2014143410A (ja) | 2012-12-28 | 2014-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| KR102305310B1 (ko) | 2012-12-28 | 2021-09-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
| TWI607510B (zh) | 2012-12-28 | 2017-12-01 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| US9316695B2 (en) | 2012-12-28 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6329762B2 (ja) | 2012-12-28 | 2018-05-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20230023050A (ko) | 2012-12-28 | 2023-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9391096B2 (en) | 2013-01-18 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI614813B (zh) | 2013-01-21 | 2018-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| TWI619010B (zh) | 2013-01-24 | 2018-03-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6223198B2 (ja) | 2013-01-24 | 2017-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5807076B2 (ja) | 2013-01-24 | 2015-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9466725B2 (en) | 2013-01-24 | 2016-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9190172B2 (en) | 2013-01-24 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9076825B2 (en) | 2013-01-30 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
| US8981374B2 (en) | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9105658B2 (en) | 2013-01-30 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing oxide semiconductor layer |
| TWI618252B (zh) | 2013-02-12 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102112367B1 (ko) | 2013-02-12 | 2020-05-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9231111B2 (en) | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9190527B2 (en) | 2013-02-13 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| US8952723B2 (en) | 2013-02-13 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device and semiconductor device |
| KR102125593B1 (ko) | 2013-02-13 | 2020-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그래머블 로직 디바이스 및 반도체 장치 |
| US9318484B2 (en) | 2013-02-20 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI611566B (zh) | 2013-02-25 | 2018-01-11 | 半導體能源研究所股份有限公司 | 顯示裝置和電子裝置 |
| US9293544B2 (en) | 2013-02-26 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having buried channel structure |
| TWI651839B (zh) | 2013-02-27 | 2019-02-21 | 半導體能源研究所股份有限公司 | 半導體裝置、驅動電路及顯示裝置 |
| TWI612321B (zh) | 2013-02-27 | 2018-01-21 | 半導體能源研究所股份有限公司 | 成像裝置 |
| US9373711B2 (en) | 2013-02-27 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6141777B2 (ja) | 2013-02-28 | 2017-06-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR102238682B1 (ko) | 2013-02-28 | 2021-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법 |
| JP2014195243A (ja) | 2013-02-28 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2014195241A (ja) | 2013-02-28 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US9276125B2 (en) | 2013-03-01 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9647152B2 (en) | 2013-03-01 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Sensor circuit and semiconductor device including sensor circuit |
| KR102153110B1 (ko) | 2013-03-06 | 2020-09-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체막 및 반도체 장치 |
| US9269315B2 (en) | 2013-03-08 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of semiconductor device |
| US8947121B2 (en) | 2013-03-12 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
| TWI644433B (zh) | 2013-03-13 | 2018-12-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6298662B2 (ja) | 2013-03-14 | 2018-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2014199709A (ja) | 2013-03-14 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 記憶装置、半導体装置 |
| JP6283237B2 (ja) | 2013-03-14 | 2018-02-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20150128823A (ko) | 2013-03-14 | 2015-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 구동 방법 및 반도체 장치 |
| US9294075B2 (en) | 2013-03-14 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20150128820A (ko) | 2013-03-14 | 2015-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 구동 방법 및 반도체 장치 |
| KR102290247B1 (ko) | 2013-03-14 | 2021-08-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법 |
| US9245650B2 (en) | 2013-03-15 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9786350B2 (en) | 2013-03-18 | 2017-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| US9153650B2 (en) | 2013-03-19 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor |
| US9577107B2 (en) | 2013-03-19 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and method for forming oxide semiconductor film |
| US9007092B2 (en) | 2013-03-22 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6093726B2 (ja) | 2013-03-22 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6355374B2 (ja) | 2013-03-22 | 2018-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US10347769B2 (en) | 2013-03-25 | 2019-07-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multi-layer source/drain electrodes |
| WO2014157019A1 (en) | 2013-03-25 | 2014-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6272713B2 (ja) | 2013-03-25 | 2018-01-31 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス及び半導体装置 |
| JP6316630B2 (ja) | 2013-03-26 | 2018-04-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6376788B2 (ja) | 2013-03-26 | 2018-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP6395409B2 (ja) | 2013-03-27 | 2018-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP2014209209A (ja) | 2013-03-28 | 2014-11-06 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US9368636B2 (en) | 2013-04-01 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers |
| JP6300589B2 (ja) | 2013-04-04 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9112460B2 (en) | 2013-04-05 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device |
| JP6198434B2 (ja) | 2013-04-11 | 2017-09-20 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
| JP6224338B2 (ja) | 2013-04-11 | 2017-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置及び半導体装置の作製方法 |
| TWI620324B (zh) | 2013-04-12 | 2018-04-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6280794B2 (ja) | 2013-04-12 | 2018-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置及びその駆動方法 |
| US10304859B2 (en) | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
| JP6456598B2 (ja) | 2013-04-19 | 2019-01-23 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US9915848B2 (en) | 2013-04-19 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| JP6333028B2 (ja) | 2013-04-19 | 2018-05-30 | 株式会社半導体エネルギー研究所 | 記憶装置及び半導体装置 |
| US9893192B2 (en) | 2013-04-24 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI647559B (zh) | 2013-04-24 | 2019-01-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
| JP6396671B2 (ja) | 2013-04-26 | 2018-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6401483B2 (ja) | 2013-04-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI644434B (zh) | 2013-04-29 | 2018-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TWI631711B (zh) | 2013-05-01 | 2018-08-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102222344B1 (ko) | 2013-05-02 | 2021-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9882058B2 (en) | 2013-05-03 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9231002B2 (en) | 2013-05-03 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| WO2014181785A1 (en) | 2013-05-09 | 2014-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9704894B2 (en) | 2013-05-10 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device including pixel electrode including oxide |
| US9246476B2 (en) | 2013-05-10 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit |
| TWI621337B (zh) | 2013-05-14 | 2018-04-11 | 半導體能源研究所股份有限公司 | 信號處理裝置 |
| TWI618058B (zh) | 2013-05-16 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI690085B (zh) | 2013-05-16 | 2020-04-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI809474B (zh) | 2013-05-16 | 2023-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US9312392B2 (en) | 2013-05-16 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9172369B2 (en) | 2013-05-17 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device and semiconductor device |
| US9454923B2 (en) | 2013-05-17 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9209795B2 (en) | 2013-05-17 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device and measuring method |
| US10032872B2 (en) | 2013-05-17 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device |
| US9754971B2 (en) | 2013-05-18 | 2017-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102358739B1 (ko) | 2013-05-20 | 2022-02-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN109888022A (zh) | 2013-05-20 | 2019-06-14 | 株式会社半导体能源研究所 | 半导体装置 |
| TWI664731B (zh) | 2013-05-20 | 2019-07-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| DE102014208859B4 (de) | 2013-05-20 | 2021-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| US9647125B2 (en) | 2013-05-20 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9343579B2 (en) | 2013-05-20 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9293599B2 (en) | 2013-05-20 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US10416504B2 (en) | 2013-05-21 | 2019-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| WO2014188983A1 (en) | 2013-05-21 | 2014-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and formation method thereof |
| JP2015195327A (ja) | 2013-06-05 | 2015-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI624936B (zh) | 2013-06-05 | 2018-05-21 | 半導體能源研究所股份有限公司 | 顯示裝置 |
| US9806198B2 (en) | 2013-06-05 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI687748B (zh) | 2013-06-05 | 2020-03-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
| JP6400336B2 (ja) | 2013-06-05 | 2018-10-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6475424B2 (ja) | 2013-06-05 | 2019-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9773915B2 (en) | 2013-06-11 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI641112B (zh) | 2013-06-13 | 2018-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6368155B2 (ja) | 2013-06-18 | 2018-08-01 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス |
| US9035301B2 (en) | 2013-06-19 | 2015-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
| TWI652822B (zh) | 2013-06-19 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | 氧化物半導體膜及其形成方法 |
| TWI633650B (zh) | 2013-06-21 | 2018-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US9515094B2 (en) | 2013-06-26 | 2016-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Storage device and semiconductor device |
| KR102269460B1 (ko) | 2013-06-27 | 2021-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6352070B2 (ja) | 2013-07-05 | 2018-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9666697B2 (en) | 2013-07-08 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device including an electron trap layer |
| JP6435124B2 (ja) | 2013-07-08 | 2018-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20150008428A1 (en) | 2013-07-08 | 2015-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US9293480B2 (en) | 2013-07-10 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| TWI622053B (zh) | 2013-07-10 | 2018-04-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US9818763B2 (en) | 2013-07-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing display device |
| JP6018607B2 (ja) | 2013-07-12 | 2016-11-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6322503B2 (ja) | 2013-07-16 | 2018-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6516978B2 (ja) | 2013-07-17 | 2019-05-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9443592B2 (en) | 2013-07-18 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US9395070B2 (en) | 2013-07-19 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Support of flexible component and light-emitting device |
| US9379138B2 (en) | 2013-07-19 | 2016-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device with drive voltage dependent on external light intensity |
| TWI608523B (zh) | 2013-07-19 | 2017-12-11 | 半導體能源研究所股份有限公司 | Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device |
| TWI636309B (zh) | 2013-07-25 | 2018-09-21 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置及電子裝置 |
| US10529740B2 (en) | 2013-07-25 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including semiconductor layer and conductive layer |
| TWI632688B (zh) | 2013-07-25 | 2018-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
| TWI641208B (zh) | 2013-07-26 | 2018-11-11 | 日商半導體能源研究所股份有限公司 | 直流對直流轉換器 |
| US9343288B2 (en) | 2013-07-31 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6460592B2 (ja) | 2013-07-31 | 2019-01-30 | 株式会社半導体エネルギー研究所 | Ｄｃｄｃコンバータ、及び半導体装置 |
| JP6410496B2 (ja) | 2013-07-31 | 2018-10-24 | 株式会社半導体エネルギー研究所 | マルチゲート構造のトランジスタ |
| TWI635750B (zh) | 2013-08-02 | 2018-09-11 | 半導體能源研究所股份有限公司 | 攝像裝置以及其工作方法 |
| US9496330B2 (en) | 2013-08-02 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
| JP2015053477A (ja) | 2013-08-05 | 2015-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
| JP6345023B2 (ja) | 2013-08-07 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US9299855B2 (en) | 2013-08-09 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having dual gate insulating layers |
| US9601591B2 (en) | 2013-08-09 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP6329843B2 (ja) | 2013-08-19 | 2018-05-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9374048B2 (en) | 2013-08-20 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device, and driving method and program thereof |
| US9385592B2 (en) | 2013-08-21 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Charge pump circuit and semiconductor device including the same |
| KR102232133B1 (ko) | 2013-08-22 | 2021-03-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9443987B2 (en) | 2013-08-23 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102244553B1 (ko) | 2013-08-23 | 2021-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자 및 반도체 장치 |
| TWI667520B (zh) | 2013-08-28 | 2019-08-01 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
| WO2015030150A1 (en) | 2013-08-30 | 2015-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Storage circuit and semiconductor device |
| US9552767B2 (en) | 2013-08-30 | 2017-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP6426402B2 (ja) | 2013-08-30 | 2018-11-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US9360564B2 (en) | 2013-08-30 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
| US9590109B2 (en) | 2013-08-30 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9449853B2 (en) | 2013-09-04 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising electron trap layer |
| JP6406926B2 (ja) | 2013-09-04 | 2018-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10008513B2 (en) | 2013-09-05 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6345544B2 (ja) | 2013-09-05 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9607991B2 (en) | 2013-09-05 | 2017-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6401977B2 (ja) | 2013-09-06 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102294507B1 (ko) | 2013-09-06 | 2021-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9590110B2 (en) | 2013-09-10 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Ultraviolet light sensor circuit |
| TWI640014B (zh) | 2013-09-11 | 2018-11-01 | 半導體能源研究所股份有限公司 | 記憶體裝置、半導體裝置及電子裝置 |
| US9269822B2 (en) | 2013-09-12 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US9893194B2 (en) | 2013-09-12 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9461126B2 (en) | 2013-09-13 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit |
| JP2015079946A (ja) | 2013-09-13 | 2015-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6429540B2 (ja) | 2013-09-13 | 2018-11-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI646690B (zh) | 2013-09-13 | 2019-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| WO2015037500A1 (en) | 2013-09-13 | 2015-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US9887297B2 (en) | 2013-09-17 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor layer in which thickness of the oxide semiconductor layer is greater than or equal to width of the oxide semiconductor layer |
| US9859439B2 (en) | 2013-09-18 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9269915B2 (en) | 2013-09-18 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI677989B (zh) | 2013-09-19 | 2019-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP2015084418A (ja) | 2013-09-23 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6570817B2 (ja) | 2013-09-23 | 2019-09-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI678740B (zh) | 2013-09-23 | 2019-12-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6383616B2 (ja) | 2013-09-25 | 2018-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102213515B1 (ko) | 2013-09-26 | 2021-02-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스위치 회로, 반도체 장치, 및 시스템 |
| JP6392603B2 (ja) | 2013-09-27 | 2018-09-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6581765B2 (ja) | 2013-10-02 | 2019-09-25 | 株式会社半導体エネルギー研究所 | ブートストラップ回路、およびブートストラップ回路を有する半導体装置 |
| JP6386323B2 (ja) | 2013-10-04 | 2018-09-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI741298B (zh) | 2013-10-10 | 2021-10-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US9293592B2 (en) | 2013-10-11 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP6591739B2 (ja) | 2013-10-16 | 2019-10-16 | 株式会社半導体エネルギー研究所 | 演算処理装置の駆動方法 |
| TWI621127B (zh) | 2013-10-18 | 2018-04-11 | 半導體能源研究所股份有限公司 | 運算處理裝置及其驅動方法 |
| TWI642170B (zh) | 2013-10-18 | 2018-11-21 | 半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
| JP2015109424A (ja) | 2013-10-22 | 2015-06-11 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置の作製方法、及び該半導体装置に用いるエッチング溶液 |
| US9455349B2 (en) | 2013-10-22 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor with reduced impurity diffusion |
| JP2015179247A (ja) | 2013-10-22 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2015109422A (ja) * | 2013-10-22 | 2015-06-11 | 株式会社半導体エネルギー研究所 | 半導体装置の評価方法 |
| DE102014220672A1 (de) | 2013-10-22 | 2015-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| KR102244460B1 (ko) | 2013-10-22 | 2021-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| DE112014004839T5 (de) | 2013-10-22 | 2016-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
| CN105659369B (zh) | 2013-10-22 | 2019-10-22 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
| JP6625796B2 (ja) | 2013-10-25 | 2019-12-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP6457239B2 (ja) | 2013-10-31 | 2019-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9590111B2 (en) | 2013-11-06 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| JP6440457B2 (ja) | 2013-11-07 | 2018-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6478562B2 (ja) | 2013-11-07 | 2019-03-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9385054B2 (en) | 2013-11-08 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device and manufacturing method thereof |
| JP2015118724A (ja) | 2013-11-13 | 2015-06-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の駆動方法 |
| JP6426437B2 (ja) | 2013-11-22 | 2018-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6393590B2 (ja) | 2013-11-22 | 2018-09-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6486660B2 (ja) | 2013-11-27 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2016001712A (ja) | 2013-11-29 | 2016-01-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20150155313A1 (en) | 2013-11-29 | 2015-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9882014B2 (en) | 2013-11-29 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2015083034A1 (en) | 2013-12-02 | 2015-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR102663193B1 (ko) | 2013-12-02 | 2024-05-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제조방법 |
| US9601634B2 (en) | 2013-12-02 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9991392B2 (en) | 2013-12-03 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10098734B2 (en) | 2013-12-05 | 2018-10-16 | Edwards Lifesciences Corporation | Prosthetic heart valve and delivery apparatus |
| JP2016027597A (ja) | 2013-12-06 | 2016-02-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9627413B2 (en) | 2013-12-12 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| US9349751B2 (en) | 2013-12-12 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI642186B (zh) | 2013-12-18 | 2018-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI666770B (zh) | 2013-12-19 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US9379192B2 (en) | 2013-12-20 | 2016-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6444714B2 (ja) | 2013-12-20 | 2018-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR102283814B1 (ko) | 2013-12-25 | 2021-07-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9960280B2 (en) | 2013-12-26 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI637484B (zh) | 2013-12-26 | 2018-10-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2015097596A1 (en) | 2013-12-26 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| SG11201604650SA (en) | 2013-12-26 | 2016-07-28 | Semiconductor Energy Lab | Semiconductor device |
| JP6402017B2 (ja) | 2013-12-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102320576B1 (ko) | 2013-12-27 | 2021-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6506961B2 (ja) | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| WO2015097595A1 (en) | 2013-12-27 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP6506545B2 (ja) | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9577110B2 (en) | 2013-12-27 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor and the display device including the semiconductor device |
| US9397149B2 (en) | 2013-12-27 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9349418B2 (en) | 2013-12-27 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| JP6488124B2 (ja) | 2013-12-27 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9318618B2 (en) | 2013-12-27 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6444723B2 (ja) | 2014-01-09 | 2018-12-26 | 株式会社半導体エネルギー研究所 | 装置 |
| US9300292B2 (en) | 2014-01-10 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Circuit including transistor |
| US9401432B2 (en) | 2014-01-16 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US9379713B2 (en) | 2014-01-17 | 2016-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device and driving method thereof |
| CN104812183A (zh) * | 2014-01-24 | 2015-07-29 | 胜华科技股份有限公司 | 电子装置 |
| KR102306200B1 (ko) | 2014-01-24 | 2021-09-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2015114476A1 (en) | 2014-01-28 | 2015-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9929044B2 (en) | 2014-01-30 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| TWI665778B (zh) | 2014-02-05 | 2019-07-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置、模組及電子裝置 |
| US9929279B2 (en) | 2014-02-05 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9443876B2 (en) | 2014-02-05 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module |
| JP6523695B2 (ja) | 2014-02-05 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6473626B2 (ja) | 2014-02-06 | 2019-02-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6545970B2 (ja) | 2014-02-07 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 装置 |
| JP2015165226A (ja) | 2014-02-07 | 2015-09-17 | 株式会社半導体エネルギー研究所 | 装置 |
| JP6420165B2 (ja) | 2014-02-07 | 2018-11-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2015118436A1 (en) | 2014-02-07 | 2015-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, device, and electronic device |
| TWI685116B (zh) | 2014-02-07 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US9479175B2 (en) | 2014-02-07 | 2016-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| KR102393626B1 (ko) | 2014-02-11 | 2022-05-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| WO2015125042A1 (en) | 2014-02-19 | 2015-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide, semiconductor device, module, and electronic device |
| CN104867981B (zh) | 2014-02-21 | 2020-04-21 | 株式会社半导体能源研究所 | 半导体膜、晶体管、半导体装置、显示装置以及电子设备 |
| JP6506566B2 (ja) | 2014-02-21 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 電流測定方法 |
| JP2015172991A (ja) | 2014-02-21 | 2015-10-01 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、及び電子機器 |
| US9564535B2 (en) | 2014-02-28 | 2017-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module |
| US9294096B2 (en) | 2014-02-28 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN106104772B (zh) | 2014-02-28 | 2020-11-10 | 株式会社半导体能源研究所 | 半导体装置以及具有该半导体装置的显示装置 |
| US10074576B2 (en) | 2014-02-28 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| JP6542542B2 (ja) | 2014-02-28 | 2019-07-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20150104518A (ko) | 2014-03-05 | 2015-09-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 레벨 시프터 회로 |
| JP6474280B2 (ja) | 2014-03-05 | 2019-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9537478B2 (en) | 2014-03-06 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9397637B2 (en) | 2014-03-06 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Voltage controlled oscillator, semiconductor device, and electronic device |
| US10096489B2 (en) | 2014-03-06 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP6625328B2 (ja) | 2014-03-06 | 2019-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
| US9711536B2 (en) | 2014-03-07 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
| US9419622B2 (en) | 2014-03-07 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102267237B1 (ko) | 2014-03-07 | 2021-06-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| US9443872B2 (en) | 2014-03-07 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2015132694A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor, touch panel, and manufacturing method of touch panel |
| WO2015132697A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9653611B2 (en) | 2014-03-07 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6442321B2 (ja) | 2014-03-07 | 2018-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置及びその駆動方法、並びに電子機器 |
| JP6585354B2 (ja) | 2014-03-07 | 2019-10-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2015136413A1 (en) | 2014-03-12 | 2015-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9640669B2 (en) | 2014-03-13 | 2017-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module |
| TWI660490B (zh) | 2014-03-13 | 2019-05-21 | 日商半導體能源研究所股份有限公司 | 攝像裝置 |
| JP6560508B2 (ja) | 2014-03-13 | 2019-08-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9324747B2 (en) | 2014-03-13 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
| JP6525421B2 (ja) | 2014-03-13 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6677449B2 (ja) | 2014-03-13 | 2020-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
| JP6541376B2 (ja) | 2014-03-13 | 2019-07-10 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイスの動作方法 |
| JP6559444B2 (ja) | 2014-03-14 | 2019-08-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2015188071A (ja) | 2014-03-14 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9299848B2 (en) | 2014-03-14 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, RF tag, and electronic device |
| US9887212B2 (en) | 2014-03-14 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| KR102414469B1 (ko) | 2014-03-14 | 2022-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 회로 시스템 |
| WO2015140656A1 (en) | 2014-03-18 | 2015-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6509596B2 (ja) | 2014-03-18 | 2019-05-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9887291B2 (en) | 2014-03-19 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module |
| US9842842B2 (en) | 2014-03-19 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and semiconductor device and electronic device having the same |
| TWI657488B (zh) | 2014-03-20 | 2019-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置 |
| JP6495698B2 (ja) | 2014-03-20 | 2019-04-03 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、及び電子機器 |
| CN106165106B (zh) | 2014-03-28 | 2020-09-15 | 株式会社半导体能源研究所 | 晶体管以及半导体装置 |
| JP6487738B2 (ja) | 2014-03-31 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品 |
| TWI735206B (zh) | 2014-04-10 | 2021-08-01 | 日商半導體能源研究所股份有限公司 | 記憶體裝置及半導體裝置 |
| US9674470B2 (en) | 2014-04-11 | 2017-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for driving semiconductor device, and method for driving electronic device |
| TWI646782B (zh) | 2014-04-11 | 2019-01-01 | 日商半導體能源研究所股份有限公司 | 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置 |
| JP6635670B2 (ja) | 2014-04-11 | 2020-01-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6541398B2 (ja) | 2014-04-11 | 2019-07-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| DE112015001878B4 (de) | 2014-04-18 | 2021-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und elektronisches Gerät |
| KR102511325B1 (ko) | 2014-04-18 | 2023-03-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 동작 방법 |
| WO2015159183A2 (en) | 2014-04-18 | 2015-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device having the same |
| JP6613044B2 (ja) | 2014-04-22 | 2019-11-27 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
| KR102380829B1 (ko) | 2014-04-23 | 2022-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 |
| KR102330412B1 (ko) | 2014-04-25 | 2021-11-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
| US9780226B2 (en) | 2014-04-25 | 2017-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI643457B (zh) | 2014-04-25 | 2018-12-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6468686B2 (ja) | 2014-04-25 | 2019-02-13 | 株式会社半導体エネルギー研究所 | 入出力装置 |
| US10043913B2 (en) | 2014-04-30 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor device, display device, module, and electronic device |
| US10656799B2 (en) | 2014-05-02 | 2020-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and operation method thereof |
| TWI679624B (zh) | 2014-05-02 | 2019-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6537341B2 (ja) | 2014-05-07 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6653997B2 (ja) | 2014-05-09 | 2020-02-26 | 株式会社半導体エネルギー研究所 | 表示補正回路及び表示装置 |
| KR102333604B1 (ko) | 2014-05-15 | 2021-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이 반도체 장치를 포함하는 표시 장치 |
| JP6612056B2 (ja) | 2014-05-16 | 2019-11-27 | 株式会社半導体エネルギー研究所 | 撮像装置、及び監視装置 |
| JP2015233130A (ja) | 2014-05-16 | 2015-12-24 | 株式会社半導体エネルギー研究所 | 半導体基板および半導体装置の作製方法 |
| JP6580863B2 (ja) | 2014-05-22 | 2019-09-25 | 株式会社半導体エネルギー研究所 | 半導体装置、健康管理システム |
| TWI672804B (zh) | 2014-05-23 | 2019-09-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| JP6616102B2 (ja) | 2014-05-23 | 2019-12-04 | 株式会社半導体エネルギー研究所 | 記憶装置及び電子機器 |
| WO2015181679A1 (en) * | 2014-05-27 | 2015-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US10020403B2 (en) | 2014-05-27 | 2018-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9874775B2 (en) | 2014-05-28 | 2018-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| KR102418666B1 (ko) | 2014-05-29 | 2022-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 소자, 전자 기기, 촬상 소자의 구동 방법, 및 전자 기기의 구동 방법 |
| JP6653129B2 (ja) | 2014-05-29 | 2020-02-26 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JP6525722B2 (ja) | 2014-05-29 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 記憶装置、電子部品、及び電子機器 |
| JP6615490B2 (ja) | 2014-05-29 | 2019-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| KR20150138026A (ko) | 2014-05-29 | 2015-12-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9831238B2 (en) | 2014-05-30 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including insulating film having opening portion and conductive film in the opening portion |
| TWI646658B (zh) | 2014-05-30 | 2019-01-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI663726B (zh) | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置、模組及電子裝置 |
| JP6537892B2 (ja) | 2014-05-30 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| JP6538426B2 (ja) | 2014-05-30 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| WO2015181997A1 (en) | 2014-05-30 | 2015-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR102259172B1 (ko) | 2014-05-30 | 2021-06-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이의 제조 방법, 및 전자 장치 |
| WO2015189731A1 (en) | 2014-06-13 | 2015-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the semiconductor device |
| JP2016015475A (ja) | 2014-06-13 | 2016-01-28 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| KR102344782B1 (ko) | 2014-06-13 | 2021-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 입력 장치 및 입출력 장치 |
| TWI663733B (zh) | 2014-06-18 | 2019-06-21 | 日商半導體能源研究所股份有限公司 | 電晶體及半導體裝置 |
| KR20150146409A (ko) | 2014-06-20 | 2015-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기 |
| TWI666776B (zh) | 2014-06-20 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及包括該半導體裝置的顯示裝置 |
| US9722090B2 (en) | 2014-06-23 | 2017-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including first gate oxide semiconductor film, and second gate |
| JP6545541B2 (ja) | 2014-06-25 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 撮像装置、監視装置、及び電子機器 |
| US10002971B2 (en) | 2014-07-03 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| US9647129B2 (en) | 2014-07-04 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9461179B2 (en) | 2014-07-11 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure |
| KR102399893B1 (ko) | 2014-07-15 | 2022-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치 |
| JP6581825B2 (ja) | 2014-07-18 | 2019-09-25 | 株式会社半導体エネルギー研究所 | 表示システム |
| KR20160010763A (ko) * | 2014-07-18 | 2016-01-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP2016029795A (ja) | 2014-07-18 | 2016-03-03 | 株式会社半導体エネルギー研究所 | 半導体装置、撮像装置及び電子機器 |
| US9312280B2 (en) | 2014-07-25 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2016012893A1 (en) | 2014-07-25 | 2016-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Oscillator circuit and semiconductor device including the same |
| JP6527416B2 (ja) | 2014-07-29 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR102380645B1 (ko) | 2014-07-31 | 2022-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 장치 |
| JP6555956B2 (ja) | 2014-07-31 | 2019-08-07 | 株式会社半導体エネルギー研究所 | 撮像装置、監視装置、及び電子機器 |
| US9705004B2 (en) | 2014-08-01 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9595955B2 (en) | 2014-08-08 | 2017-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including power storage elements and switches |
| JP6553444B2 (ja) | 2014-08-08 | 2019-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6652342B2 (ja) | 2014-08-08 | 2020-02-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10147747B2 (en) | 2014-08-21 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
| US10032888B2 (en) | 2014-08-22 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device |
| US10559667B2 (en) | 2014-08-25 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for measuring current of semiconductor device |
| KR102388997B1 (ko) | 2014-08-29 | 2022-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 전자 기기 |
| KR102545592B1 (ko) | 2014-09-02 | 2023-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 전자 기기 |
| KR102329498B1 (ko) | 2014-09-04 | 2021-11-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9766517B2 (en) | 2014-09-05 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and display module |
| JP2016066065A (ja) | 2014-09-05 | 2016-04-28 | 株式会社半導体エネルギー研究所 | 表示装置、および電子機器 |
| JP6676316B2 (ja) | 2014-09-12 | 2020-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9722091B2 (en) | 2014-09-12 | 2017-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR20160034200A (ko) | 2014-09-19 | 2016-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| DE112015004272T5 (de) | 2014-09-19 | 2017-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Herstellungsverfahren der Halbleitervorrichtung |
| JP2016066788A (ja) | 2014-09-19 | 2016-04-28 | 株式会社半導体エネルギー研究所 | 半導体膜の評価方法および半導体装置の作製方法 |
| US9401364B2 (en) | 2014-09-19 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
| US10071904B2 (en) | 2014-09-25 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display module, and electronic device |
| US10170055B2 (en) | 2014-09-26 | 2019-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
| JP2016111677A (ja) | 2014-09-26 | 2016-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置、無線センサ、及び電子機器 |
| WO2016046685A1 (en) | 2014-09-26 | 2016-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
| JP6633330B2 (ja) | 2014-09-26 | 2020-01-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9450581B2 (en) | 2014-09-30 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, semiconductor device, electronic component, and electronic device |
| KR20170068511A (ko) | 2014-10-06 | 2017-06-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| US9698170B2 (en) | 2014-10-07 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display module, and electronic device |
| KR20170069207A (ko) | 2014-10-10 | 2017-06-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 회로 기판, 및 전자 기기 |
| WO2016055913A1 (en) | 2014-10-10 | 2016-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, processing unit, electronic component, and electronic device |
| US9991393B2 (en) | 2014-10-16 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, module, and electronic device |
| JP6645793B2 (ja) | 2014-10-17 | 2020-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2016063159A1 (en) | 2014-10-20 | 2016-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof, module, and electronic device |
| US10068927B2 (en) | 2014-10-23 | 2018-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display module, and electronic device |
| JP6615565B2 (ja) | 2014-10-24 | 2019-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI652362B (zh) | 2014-10-28 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | 氧化物及其製造方法 |
| US9704704B2 (en) | 2014-10-28 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
| KR102439023B1 (ko) | 2014-10-28 | 2022-08-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 표시 장치의 제작 방법, 및 전자 기기 |
| JP6780927B2 (ja) | 2014-10-31 | 2020-11-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10680017B2 (en) | 2014-11-07 | 2020-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device |
| US9584707B2 (en) | 2014-11-10 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| US9548327B2 (en) | 2014-11-10 | 2017-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device having a selenium containing photoelectric conversion layer |
| TWI711165B (zh) | 2014-11-21 | 2020-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
| US9438234B2 (en) | 2014-11-21 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device including logic circuit |
| JP6563313B2 (ja) | 2014-11-21 | 2019-08-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| TWI766298B (zh) | 2014-11-21 | 2022-06-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102524983B1 (ko) | 2014-11-28 | 2023-04-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 모듈, 및 전자 기기 |
| JP6647841B2 (ja) | 2014-12-01 | 2020-02-14 | 株式会社半導体エネルギー研究所 | 酸化物の作製方法 |
| US9768317B2 (en) | 2014-12-08 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of semiconductor device, and electronic device |
| JP6667267B2 (ja) | 2014-12-08 | 2020-03-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN113793872A (zh) | 2014-12-10 | 2021-12-14 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| JP6689062B2 (ja) | 2014-12-10 | 2020-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6833315B2 (ja) | 2014-12-10 | 2021-02-24 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US9773832B2 (en) | 2014-12-10 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2016092416A1 (en) | 2014-12-11 | 2016-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, and electronic device |
| JP6676354B2 (ja) | 2014-12-16 | 2020-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2016116220A (ja) | 2014-12-16 | 2016-06-23 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| KR102581808B1 (ko) | 2014-12-18 | 2023-09-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 센서 장치, 및 전자 기기 |
| TWI686874B (zh) | 2014-12-26 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法 |
| US10396210B2 (en) | 2014-12-26 | 2019-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device |
| KR20170101233A (ko) | 2014-12-26 | 2017-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링용 타깃의 제작 방법 |
| KR20170098839A (ko) | 2014-12-29 | 2017-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 가지는 표시 장치 |
| US10522693B2 (en) | 2015-01-16 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
| US9954112B2 (en) | 2015-01-26 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9812587B2 (en) | 2015-01-26 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9443564B2 (en) | 2015-01-26 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
| US9647132B2 (en) | 2015-01-30 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| TWI710124B (zh) | 2015-01-30 | 2020-11-11 | 日商半導體能源研究所股份有限公司 | 成像裝置及電子裝置 |
| WO2016125049A1 (en) | 2015-02-02 | 2016-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Oxide and manufacturing method thereof |
| WO2016125051A1 (en) | 2015-02-04 | 2016-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| TWI683365B (zh) | 2015-02-06 | 2020-01-21 | 日商半導體能源研究所股份有限公司 | 裝置及其製造方法以及電子裝置 |
| US9660100B2 (en) | 2015-02-06 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6674269B2 (ja) | 2015-02-09 | 2020-04-01 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| JP6717604B2 (ja) | 2015-02-09 | 2020-07-01 | 株式会社半導体エネルギー研究所 | 半導体装置、中央処理装置及び電子機器 |
| TWI685113B (zh) | 2015-02-11 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP2016154225A (ja) | 2015-02-12 | 2016-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| CN107210230B (zh) | 2015-02-12 | 2022-02-11 | 株式会社半导体能源研究所 | 氧化物半导体膜及半导体装置 |
| US9818880B2 (en) | 2015-02-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| US10249644B2 (en) | 2015-02-13 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US9489988B2 (en) | 2015-02-20 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| US10403646B2 (en) | 2015-02-20 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9991394B2 (en) | 2015-02-20 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
| JP6711642B2 (ja) | 2015-02-25 | 2020-06-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6739185B2 (ja) | 2015-02-26 | 2020-08-12 | 株式会社半導体エネルギー研究所 | ストレージシステム、およびストレージ制御回路 |
| US9653613B2 (en) | 2015-02-27 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6744108B2 (ja) | 2015-03-02 | 2020-08-19 | 株式会社半導体エネルギー研究所 | トランジスタ、トランジスタの作製方法、半導体装置および電子機器 |
| DE112016001033T5 (de) | 2015-03-03 | 2017-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Verfahren zum Herstellen derselben oder Anzeigevorrichtung mit derselben |
| TWI718125B (zh) | 2015-03-03 | 2021-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| CN107406966B (zh) | 2015-03-03 | 2020-11-20 | 株式会社半导体能源研究所 | 氧化物半导体膜、包括该氧化物半导体膜的半导体装置以及包括该半导体装置的显示装置 |
| US9905700B2 (en) | 2015-03-13 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or memory device and driving method thereof |
| KR102560862B1 (ko) | 2015-03-17 | 2023-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 터치 패널 |
| US9882061B2 (en) | 2015-03-17 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10008609B2 (en) | 2015-03-17 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
| US9964799B2 (en) | 2015-03-17 | 2018-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, and electronic device |
| JP2016177280A (ja) | 2015-03-18 | 2016-10-06 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器、並びに表示装置の駆動方法 |
| US10147823B2 (en) | 2015-03-19 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6662665B2 (ja) | 2015-03-19 | 2020-03-11 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び該液晶表示装置を用いた電子機器 |
| KR102582523B1 (ko) | 2015-03-19 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| US9842938B2 (en) | 2015-03-24 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including semiconductor device |
| KR20160114511A (ko) | 2015-03-24 | 2016-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| JP6688116B2 (ja) | 2015-03-24 | 2020-04-28 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
| US10096715B2 (en) | 2015-03-26 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, and electronic device |
| US10429704B2 (en) | 2015-03-26 | 2019-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module including the display device, and electronic device including the display device or the display module |
| JP6736321B2 (ja) | 2015-03-27 | 2020-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| US9806200B2 (en) | 2015-03-27 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI695513B (zh) | 2015-03-27 | 2020-06-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
| TW202316486A (zh) | 2015-03-30 | 2023-04-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| US9716852B2 (en) | 2015-04-03 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Broadcast system |
| US10389961B2 (en) | 2015-04-09 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| KR102663128B1 (ko) | 2015-04-13 | 2024-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US10372274B2 (en) | 2015-04-13 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and touch panel |
| US10460984B2 (en) | 2015-04-15 | 2019-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
| US10056497B2 (en) | 2015-04-15 | 2018-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9916791B2 (en) | 2015-04-16 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic device, and method for driving display device |
| US10192995B2 (en) | 2015-04-28 | 2019-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10002970B2 (en) | 2015-04-30 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of the same, or display device including the same |
| KR102549926B1 (ko) | 2015-05-04 | 2023-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기 |
| US10671204B2 (en) | 2015-05-04 | 2020-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel and data processor |
| JP6681780B2 (ja) | 2015-05-07 | 2020-04-15 | 株式会社半導体エネルギー研究所 | 表示システムおよび電子機器 |
| DE102016207737A1 (de) | 2015-05-11 | 2016-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Verfahren zum Herstellen der Halbleitervorrichtung, Reifen und beweglicher Gegenstand |
| TWI693719B (zh) | 2015-05-11 | 2020-05-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| US11728356B2 (en) | 2015-05-14 | 2023-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion element and imaging device |
| JP6935171B2 (ja) | 2015-05-14 | 2021-09-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9627034B2 (en) | 2015-05-15 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| JP6803682B2 (ja) | 2015-05-22 | 2020-12-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9837547B2 (en) | 2015-05-22 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide conductor and display device including the semiconductor device |
| JP6773453B2 (ja) | 2015-05-26 | 2020-10-21 | 株式会社半導体エネルギー研究所 | 記憶装置及び電子機器 |
| JP2016225614A (ja) | 2015-05-26 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10139663B2 (en) | 2015-05-29 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Input/output device and electronic device |
| KR102553553B1 (ko) | 2015-06-12 | 2023-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치, 및 그 동작 방법 및 전자 기기 |
| WO2016203354A1 (en) | 2015-06-19 | 2016-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
| US9860465B2 (en) | 2015-06-23 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| US9935633B2 (en) | 2015-06-30 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, semiconductor device, electronic component, and electronic device |
| US10290573B2 (en) | 2015-07-02 | 2019-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US9917209B2 (en) | 2015-07-03 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including step of forming trench over semiconductor |
| WO2017006207A1 (en) | 2015-07-08 | 2017-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2017022377A (ja) | 2015-07-14 | 2017-01-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10501003B2 (en) | 2015-07-17 | 2019-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, lighting device, and vehicle |
| US10985278B2 (en) | 2015-07-21 | 2021-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US11024725B2 (en) | 2015-07-24 | 2021-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including metal oxide film |
| US10978489B2 (en) | 2015-07-24 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device |
| US11189736B2 (en) | 2015-07-24 | 2021-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10424671B2 (en) | 2015-07-29 | 2019-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, circuit board, and electronic device |
| US9825177B2 (en) | 2015-07-30 | 2017-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of a semiconductor device using multiple etching mask |
| US10585506B2 (en) | 2015-07-30 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device with high visibility regardless of illuminance of external light |
| CN106409919A (zh) | 2015-07-30 | 2017-02-15 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| JP6802656B2 (ja) | 2015-07-30 | 2020-12-16 | 株式会社半導体エネルギー研究所 | メモリセルの作製方法及び半導体装置の作製方法 |
| JP6725357B2 (ja) | 2015-08-03 | 2020-07-15 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
| US9876946B2 (en) | 2015-08-03 | 2018-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| JP6791661B2 (ja) | 2015-08-07 | 2020-11-25 | 株式会社半導体エネルギー研究所 | 表示パネル |
| WO2017029576A1 (en) | 2015-08-19 | 2017-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP2017041877A (ja) | 2015-08-21 | 2017-02-23 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、および電子機器 |
| US9666606B2 (en) | 2015-08-21 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US9773919B2 (en) | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2017037564A1 (en) | 2015-08-28 | 2017-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, transistor, and semiconductor device |
| JP2017050537A (ja) | 2015-08-31 | 2017-03-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9911756B2 (en) | 2015-08-31 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage |
| JP6807683B2 (ja) | 2015-09-11 | 2021-01-06 | 株式会社半導体エネルギー研究所 | 入出力パネル |
| SG10201607278TA (en) | 2015-09-18 | 2017-04-27 | Semiconductor Energy Lab Co Ltd | Semiconductor device and electronic device |
| JP2017063420A (ja) | 2015-09-25 | 2017-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9935143B2 (en) | 2015-09-30 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2017064590A1 (en) | 2015-10-12 | 2017-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2017064587A1 (en) | 2015-10-12 | 2017-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, input/output device, data processor, and method for manufacturing display panel |
| US9852926B2 (en) | 2015-10-20 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
| DE112016000146T5 (de) | 2015-10-23 | 2017-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und elektronische Vorrichtung |
| WO2017068490A1 (en) | 2015-10-23 | 2017-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US10007161B2 (en) | 2015-10-26 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| SG10201608814YA (en) | 2015-10-29 | 2017-05-30 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the semiconductor device |
| US9773787B2 (en) | 2015-11-03 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, or method for driving the semiconductor device |
| US9741400B2 (en) | 2015-11-05 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, and method for operating the semiconductor device |
| JP6796461B2 (ja) | 2015-11-18 | 2020-12-09 | 株式会社半導体エネルギー研究所 | 半導体装置、コンピュータ及び電子機器 |
| JP6887243B2 (ja) | 2015-12-11 | 2021-06-16 | 株式会社半導体エネルギー研究所 | トランジスタ、半導体装置、電子機器及び半導ウエハ |
| JP2018032839A (ja) | 2015-12-11 | 2018-03-01 | 株式会社半導体エネルギー研究所 | トランジスタ、回路、半導体装置、表示装置および電子機器 |
| JP2017112374A (ja) | 2015-12-16 | 2017-06-22 | 株式会社半導体エネルギー研究所 | トランジスタ、半導体装置、および電子機器 |
| WO2017103731A1 (en) | 2015-12-18 | 2017-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
| US10177142B2 (en) | 2015-12-25 | 2019-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Circuit, logic circuit, processor, electronic component, and electronic device |
| WO2017115214A1 (en) | 2015-12-28 | 2017-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| JP2017135698A (ja) | 2015-12-29 | 2017-08-03 | 株式会社半導体エネルギー研究所 | 半導体装置、コンピュータ及び電子機器 |
| CN108473334B (zh) | 2015-12-29 | 2021-03-12 | 株式会社半导体能源研究所 | 金属氧化物膜以及半导体装置 |
| JP6851814B2 (ja) | 2015-12-29 | 2021-03-31 | 株式会社半導体エネルギー研究所 | トランジスタ |
| US10580798B2 (en) | 2016-01-15 | 2020-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20230062664A (ko) | 2016-01-18 | 2023-05-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 금속 산화물막, 반도체 장치, 및 표시 장치 |
| US9905657B2 (en) | 2016-01-20 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP6822853B2 (ja) | 2016-01-21 | 2021-01-27 | 株式会社半導体エネルギー研究所 | 記憶装置及び記憶装置の駆動方法 |
| US10411013B2 (en) | 2016-01-22 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| US10700212B2 (en) | 2016-01-28 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof |
| US10115741B2 (en) | 2016-02-05 | 2018-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US10250247B2 (en) | 2016-02-10 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
| KR20230168285A (ko) | 2016-02-12 | 2023-12-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 상기 반도체 장치를 포함하는 표시 장치 |
| JP6970511B2 (ja) | 2016-02-12 | 2021-11-24 | 株式会社半導体エネルギー研究所 | トランジスタ |
| KR20170096956A (ko) | 2016-02-17 | 2017-08-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 기기 |
| WO2017149413A1 (en) | 2016-03-04 | 2017-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10263114B2 (en) | 2016-03-04 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
| CN115954389A (zh) | 2016-03-04 | 2023-04-11 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| JP6904730B2 (ja) | 2016-03-08 | 2021-07-21 | 株式会社半導体エネルギー研究所 | 撮像装置 |
| US9882064B2 (en) | 2016-03-10 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and electronic device |
| US10096720B2 (en) | 2016-03-25 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
| JP6668455B2 (ja) | 2016-04-01 | 2020-03-18 | 株式会社半導体エネルギー研究所 | 酸化物半導体膜の作製方法 |
| US10236875B2 (en) | 2016-04-15 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for operating the semiconductor device |
| KR102295315B1 (ko) | 2016-04-15 | 2021-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
| WO2017199130A1 (en) | 2016-05-19 | 2017-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and transistor |
| CN109196656B (zh) | 2016-06-03 | 2022-04-19 | 株式会社半导体能源研究所 | 金属氧化物及场效应晶体管 |
| KR102330605B1 (ko) | 2016-06-22 | 2021-11-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US10411003B2 (en) | 2016-10-14 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN108109592B (zh) | 2016-11-25 | 2022-01-25 | 株式会社半导体能源研究所 | 显示装置及其工作方法 |
| WO2018123510A1 (ja) * | 2016-12-28 | 2018-07-05 | コニカミノルタ株式会社 | 電子デバイス |
| US11257722B2 (en) | 2017-07-31 | 2022-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide containing gallium indium and zinc |
| JP6782211B2 (ja) * | 2017-09-08 | 2020-11-11 | 株式会社東芝 | 透明電極、それを用いた素子、および素子の製造方法 |
| WO2019145803A1 (ja) | 2018-01-24 | 2019-08-01 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、及び電子機器 |
| JP7293190B2 (ja) | 2018-03-16 | 2023-06-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN108899436B (zh) | 2018-06-29 | 2020-03-06 | 京东方科技集团股份有限公司 | 一种封装结构、显示面板、显示装置及其制作方法 |
| JPWO2020012276A1 (ja) | 2018-07-09 | 2021-08-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP7399857B2 (ja) | 2018-07-10 | 2023-12-18 | 株式会社半導体エネルギー研究所 | 二次電池の保護回路 |
| CN113196546A (zh) | 2018-12-20 | 2021-07-30 | 株式会社半导体能源研究所 | 半导体装置及电池组 |
| TWI690060B (zh) * | 2019-04-25 | 2020-04-01 | 元太科技工業股份有限公司 | 記憶體結構及其製造方法 |
| US11948945B2 (en) | 2019-05-31 | 2024-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and wireless communication device with the semiconductor device |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62127789A (ja) | 1985-11-29 | 1987-06-10 | 日産自動車株式会社 | 薄膜ｅｌパネル |
| JP2686169B2 (ja) | 1990-07-11 | 1997-12-08 | シャープ株式会社 | 薄膜ｅｌパネル |
| US5618392A (en) * | 1991-10-31 | 1997-04-08 | Tanaka Kikinzoku Kogyo K.K. | Gas diffusion electrode |
| JP3534445B2 (ja) * | 1993-09-09 | 2004-06-07 | 隆一 山本 | ポリチオフェンを用いたｅｌ素子 |
| US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| JP3290375B2 (ja) * | 1997-05-12 | 2002-06-10 | 松下電器産業株式会社 | 有機電界発光素子 |
| US6337492B1 (en) * | 1997-07-11 | 2002-01-08 | Emagin Corporation | Serially-connected organic light emitting diode stack having conductors sandwiching each light emitting layer |
| GB9718516D0 (en) * | 1997-09-01 | 1997-11-05 | Cambridge Display Tech Ltd | Methods of Increasing the Efficiency of Organic Electroluminescent Devices |
| US6685806B1 (en) | 1998-12-22 | 2004-02-03 | David Fuel Cell Components, S.L. | Membrane electrode assembly and method of its production |
| JP2000208252A (ja) | 1999-01-14 | 2000-07-28 | Tdk Corp | 有機ｅｌ素子 |
| JP2000294369A (ja) | 1999-04-05 | 2000-10-20 | Chisso Corp | 有機ｅｌ素子 |
| JP3942770B2 (ja) * | 1999-09-22 | 2007-07-11 | 株式会社半導体エネルギー研究所 | Ｅｌ表示装置及び電子装置 |
| JP4434411B2 (ja) * | 2000-02-16 | 2010-03-17 | 出光興産株式会社 | アクティブ駆動型有機ｅｌ発光装置およびその製造方法 |
| JP3936151B2 (ja) | 2000-05-08 | 2007-06-27 | 双葉電子工業株式会社 | 有機ｅｌ素子 |
| JP4994564B2 (ja) * | 2001-03-02 | 2012-08-08 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 二重ドープ層燐光有機発光装置 |
| JP2002343562A (ja) * | 2001-05-11 | 2002-11-29 | Pioneer Electronic Corp | 発光ディスプレイ装置及びその製造方法 |
| JP3823916B2 (ja) * | 2001-12-18 | 2006-09-20 | セイコーエプソン株式会社 | 表示装置及び電子機器並びに表示装置の製造方法 |
| JP2004079301A (ja) * | 2002-08-14 | 2004-03-11 | Fuji Photo Film Co Ltd | 発光素子およびその製造方法 |
| JP4434563B2 (ja) * | 2002-09-12 | 2010-03-17 | パイオニア株式会社 | 有機ｅｌ表示装置の製造方法 |
| US20040051444A1 (en) * | 2002-09-17 | 2004-03-18 | General Electric Company | Articles having raised features and methods for making the same |
| JP2004207142A (ja) * | 2002-12-26 | 2004-07-22 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置、電子機器 |
| US7101630B2 (en) * | 2003-07-10 | 2006-09-05 | Kawamura Institute Of Chemical Research | Diarylamino group-containing copolymer, organic electroluminescent device, and method of producing hole transport layer for organic electroluminescent device |
| JP4997688B2 (ja) * | 2003-08-19 | 2012-08-08 | セイコーエプソン株式会社 | 電極、薄膜トランジスタ、電子回路、表示装置および電子機器 |
| CN100511368C (zh) * | 2004-03-12 | 2009-07-08 | 富士胶片株式会社 | 显示装置及其驱动方法 |
| US7250728B2 (en) * | 2004-04-21 | 2007-07-31 | Au Optronics | Bottom and top emission OLED pixel structure |
| KR100696469B1 (ko) * | 2004-06-08 | 2007-03-19 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이를 구비한 평판 표시장치 |
| US7872259B2 (en) | 2004-11-10 | 2011-01-18 | Canon Kabushiki Kaisha | Light-emitting device |
| KR100669762B1 (ko) | 2004-11-15 | 2007-01-16 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 |
| KR100719706B1 (ko) * | 2005-09-13 | 2007-05-17 | 삼성에스디아이 주식회사 | 평판표시장치 및 유기 발광표시장치 |
-
2006
- 2006-09-27 JP JP2006261997A patent/JP4274219B2/ja not_active Expired - Fee Related
-
2007
- 2007-08-23 US US11/844,015 patent/US8553312B2/en not_active Expired - Fee Related
- 2007-09-12 KR KR1020070092667A patent/KR101367858B1/ko not_active IP Right Cessation
- 2007-09-17 CN CN2007101542708A patent/CN101154716B/zh not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| JP昭62-127789A 1987.06.10 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8553312B2 (en) | 2013-10-08 |
| CN101154716A (zh) | 2008-04-02 |
| US20080106191A1 (en) | 2008-05-08 |
| KR101367858B1 (ko) | 2014-02-27 |
| JP4274219B2 (ja) | 2009-06-03 |
| JP2008084642A (ja) | 2008-04-10 |
| KR20080028775A (ko) | 2008-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101154716B (zh) | 电子设备、有机电致发光装置、有机薄膜半导体装置 | |
| Leijtens et al. | Stability of metal halide perovskite solar cells | |
| Dini | Electrochemiluminescence from organic emitters | |
| KR101261633B1 (ko) | 유기 전자 장치를 위한 금속 화합물-금속 다층 전극 | |
| KR101372244B1 (ko) | 전기활성 장치용 전극 스택 및 이의 제조 방법 | |
| KR100726061B1 (ko) | 다수의 전기 접속된 유기 광전자 소자와 이를 마련하는방법 | |
| JP4855682B2 (ja) | 有機エレクトロルミネセンス装置およびその製造方法 | |
| Ling et al. | Bistable electrical switching and memory effects in a thin film of copolymer containing electron donor− acceptor moieties and europium complexes | |
| KR20060105587A (ko) | 유기 전계 발광 소자 | |
| JP2009510745A (ja) | 有機電子デバイスの加工性及び性能を改善するための中和されたアノード緩衝層 | |
| US8652354B2 (en) | Organic additives for improved lifetimes in organic and solution processible electronic devices | |
| CN103098551A (zh) | 电致发光元件、显示装置以及照明装置 | |
| JP2007214015A (ja) | 水及び酸素の捕捉剤、有機電子デバイス | |
| Bange et al. | The role of poly (3, 4-ethylenedioxythiophene): poly (styrenesulphonate) as a hole injection layer in a blue-emitting polymer light-emitting diode | |
| Zhang et al. | Electrochemical variation of the energy level of poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate) | |
| JP5035255B2 (ja) | 電気泳動表示装置 | |
| US20060177690A1 (en) | Tri-layer PLED devices with both room-temperature and high-temperature operational stability | |
| KR20200026057A (ko) | 도포형 유기 전계 발광 소자와, 이를 포함하는 표시장치 및 조명장치 | |
| KR100567220B1 (ko) | 개선된 효율을 갖는 유기 전계발광 소자 및 이에 기초한 디스플레이 장치 | |
| US7408185B2 (en) | Organic light emitting device and display using the same | |
| JP2008520007A (ja) | 非ピクセル化ディスプレイ | |
| Gross et al. | Combinatorial optimization of polymeric anodes for use in organic light-emitting diodes | |
| Tracy | Polymer Bulk Homojunction Light-emitting and Photovoltaic Cells | |
| WO2014051454A1 (en) | Light-emitting device with improved stability due to ion-irradiated composite hole transport layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101215 Termination date: 20170917 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |