CN103668117B - 对电感耦合的等离子体沉积反应器的工艺气管理 - Google Patents

对电感耦合的等离子体沉积反应器的工艺气管理 Download PDF

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CN103668117B
CN103668117B CN201310412808.6A CN201310412808A CN103668117B CN 103668117 B CN103668117 B CN 103668117B CN 201310412808 A CN201310412808 A CN 201310412808A CN 103668117 B CN103668117 B CN 103668117B
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F·阿洛克塞
R·B·米利根盖
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Abstract

披露了关联于加工半导体衬底的硬件和方法的实施例。一示例性薄膜沉积反应器，包括：工艺气分配器，该工艺气分配器包括：被定位以将等离子气提供给薄膜沉积反应器中的等离子发生区的等离子气馈给进口以及被定位以将薄膜前体气提供给等离子发生区的下游的前体气馈给进口；绝缘的密闭容器，其被配置成在薄膜沉积反应器中将等离子发生区维持在降低的压力下；以及电感耦合的等离子(ICP)线圈，其被设置在绝缘的密闭容器的一部分侧壁周围并被定位成使侧壁将等离子发生区与ICP线圈隔开；以及基座，其被配置成支承半导体衬底以使半导体衬底的薄膜沉积表面暴露于被形成在工艺气分配器下游的反应区。

Description

对电感耦合的等离子体沉积反应器的工艺气管理
背景技术
一些半导体制造工艺具有低热预算。例如，用于在第一金属互连层成形之后沉积薄膜的一些工艺可在低温下沉积以避免金属的电迁徙和对器件可能的损害。因此，一些沉积反应的热活化在这些情况下是困难的。一些之前的方法已尝试利用容易分解的分子作为薄膜成形的开始点。然而，这些化学剂难以处理并可能仍然遭受低的沉积速率。已尝试其它使用等离子能量的方法来加速沉积。然而，一些器件在这些条件下可能对等离子损害是敏感的，并且一些分子当暴露于等离子能量时可能经历不合需的反应。
发明内容
本文披露了多个实施例，这些实施例关联于加工半导体衬底的硬件和方法。在一个实施例中，包括电感耦合的等离子(ICP)的薄膜沉积反应器包括工艺气分配器，该工艺气分配器包括被定位以将等离子气提供给薄膜沉积反应器中的等离子发生区的等离子气馈给进口以及被定位以在等离子发生区的下游提供薄膜前体气的前体气馈给进口。示例性薄膜沉积反应器也包括：绝缘的密闭容器，其配置成在薄膜沉积反应器中将等离子发生区维持在减小的压力下；以及ICP线圈，其设置在绝缘的密闭容器的一部分侧壁周围并使侧壁将等离子发生区与ICP线圈隔开。该示例性薄膜沉积反应器进一步包括基座，其配置成支承半导体衬底以使半导体衬底的薄膜沉积表面暴露于被形成在工艺气分配器下游的反应区。
提供本发明内容以便以简化形式介绍将在以下具体实施方式中进一步描述的一些概念。本发明内容并不旨在标识所要求保护主题的关键特征或必要特征，也不旨在用于限制所要求保护主题的范围。此外，所要求保护的主题不限于解决在本公开的任一部分中所提及的任何或所有缺点的实现。
附图简述
图1示意地示出根据本公开的实施例的示例性薄膜沉积工艺反应器。
图2示意地示出根据本公开的实施例的示例性工艺气分配器组件的横截面。
图3示意地示出包含在图2所示的工艺气分配器中的示例性前体气分配器的立体图。
图4示意地示出根据本公开的实施例的另一示例性前体气分配器组件的横截面。
图5示意地示出图4所示的示例性前体气分配器的立体图。
图6示意地示出根据本公开的实施例的另一示例性前体气分配器的横截面。
图7示意地示出图6所示的示例性前体气分配器的立体图。
图8示意地示出根据本公开的实施例具有带层流外形的侧壁的绝缘的密闭容器的一个例子。
图9示意地示出根据本公开的实施例具有带层流外形的侧壁的绝缘的密闭容器的另一例子。
图10示出根据本公开的实施例的加工半导体衬底的示例性方法的流程图。
图11示意地示出根据本公开的实施例的包括一个或多个薄膜沉积工艺反应器的半导体加工工具的一个例子。
具体实施方式
半导体器件可包括通过各种沉积技术形成的薄膜。化学汽相沉积(CVD)和原子层沉积(ALD)工艺有时被用来沉积在半导体器件制造工艺中使用的薄膜。在一些设置中，热预算考量因素可能影响薄膜成形条件。例如，视将要使用沉积工艺的某个制造阶段的情况而定，提供适于在CVD或ALD工艺中活化某些分子分解过程的热能可能会改变器件性能。
作为对策，一些沉积工艺使用等离子活化。例如，由适宜等离子气形成的游离基可与已化学吸附在半导体衬底上的物种反应，或者游离基物种本身可化学吸附至衬底。然而，等离子活化可能对一些工艺提出挑战。例如，被吸附至反应器内其它表面的反应分子可通过游离基活化。这种活化可能导致在器件和/或加工工具内引起缺陷的那些表面上的薄膜积聚和/或微粒形成。
因此，所披露的实施例关联于加工半导体衬底的硬件和方法。在一个实施例中，包括电感耦合的等离子(ICP)的薄膜沉积反应器包括工艺气分配器，该工艺气分配器包括被定位以将等离子气提供给薄膜沉积反应器中的等离子发生区的等离子气馈给进口以及被定位以在等离子发生区的下游提供薄膜前体气的前体气馈给进口。示例性薄膜沉积反应器也包括：绝缘的密闭容器，其配置成在薄膜沉积反应器中将等离子发生区维持在减小的压力下；以及ICP线圈，其设置在绝缘的密闭容器的一部分侧壁周围并使侧壁将等离子发生区与ICP线圈隔开。该示例性薄膜沉积反应器进一步包括基座，其配置成支承半导体衬底以使半导体衬底的薄膜沉积表面暴露于被形成在工艺气分配器下游的反应区。
因此，利用等离子能量活化/增进沉积反应可避免由热活化导致的一些性能改变效果。在等离子发生区下游引入等离子敏感的前体可防止那些前体发生不想要的反应。例如，等离子敏感的前体的气相反应或凝相反应可通过本文披露的气体分配方案得以避免。进而，薄膜成形可集中在暴露的衬底而不是反应器的各个表面，例如等离子发生区内的各表面。沉积在这些表面上的薄膜可造成等离子发生硬件的法拉第屏蔽、气体分配喷嘴的阻塞和/或可能被转移到衬底表面的小微粒的产生。
图1示意地示出用于加工半导体衬底106的半导体加工模块100的实施例。半导体加工模块100包括薄膜沉积反应器102以及ICP系统104，该ICP系统104包括RF电源和ICP线圈。薄膜沉积反应器102被配置成在低压条件下将一个或多个薄膜沉积在衬底106上。例如，在等离子发生区108中产生的等离子被用来产生游离基。进而，这些游离基被提供给衬底106以沉积选定的薄膜。
在图1所示例子中，衬底106被图示为支承在基座109上，该基座109在一些实施例中可通过加热器被加热以将热能提供给衬底106。此外，在一些实施例中，基座109可通过升降机上升或下降，以使衬底106可移入和移出反应器102并被定位在反应区110内。
薄膜沉积反应器102包括工艺气分配器112，该工艺气分配器112被配置成将适于直接等离子活化的气体传递至等离子发生区108并同时将一种或多种其它工艺气传递至反应区110而无需使它们暴露于等离子状态。例如，工艺气分配器112可将一种或多种等离子气，并在一些实施例中将一种或多种反应气，提供给等离子发生区108。工艺气分配器112也可将一种或多种等离子敏感的前体气提供给反应区110。
如本文中使用的，前体气指等离子敏感的工艺气(例如当暴露于等离子状态时可能经历不合需反应的工艺气，在某些情况下可能导致微粒产生)，它会对薄膜成形反应中形成在衬底上的薄膜造成麻烦。在一些例子中，前体气可包括多种金属有机化合物或金属卤化化合物，这些化合物具有一旦暴露于等离子能量就能被轻易地消灭的配合基。对等离子状态相对较不敏感，并且或者对等离子产生(例如等离子气)作出贡献或者由等离子理想地活化的工艺气，例如可参与薄膜成形反应的一些反应气，可直接地或从上游位置被提供给反应区110。进而，游离基和等离子敏感的工艺气可被提供给反应区110以使薄膜沉积处理继续并同时减轻前体气可能不合需的等离子间接反应。
图2示意地示出用于薄膜沉积反应器102的工艺气分配器112的一个实施例。在图2所示实施例中，工艺气分配器112包括等离子气分配器114和前体气分配器116。气体分配器由支承结构118支承并通过如下文中更详细描述的绝缘器120彼此绝缘。尽管图2所示的实施例绘出了可从管式子单元组装而成的气体分配器112(例如前体气分配器116可由适宜的管道制造而成)，然而要理解，工艺气分配器112可由任何适宜的材料以任何适宜的方式制造。
等离子气分配器114包括一个或多个等离子气馈给进口202。等离子气馈给进口202被定位以将等离子气提供给薄膜沉积反应器102中的等离子反应区108。可利用等离子气馈给进口202的任何适宜的结构/取向而不脱离本公开的范围。例如，在一些实施例中，等离子气馈给进口202可被配置成有助于理想的流态形成在等离子发生区108中。例如，在等离子发生区108中可产生层流态以阻止逆流和/或涡流的形成，所述逆流和/或涡流可能朝向衬底106驱逐和循环小微粒或可能使前体气朝向等离子发生区108移动。在一些实施例中，等离子气馈给进口202可如图2所示地被径向地设置，或倾斜或以其它方式适当取向以引导等离子发生区108中离开的等离子气。此外，在一些实施例中，等离子气馈给进口202可包括适当的喷嘴、缩管和/或扩管以调整离开的等离子气的速度。
等离子气经由一个或多个等离子气供给管线(见图1中的等离子气供给管线122)被提供给等离子气馈给进口202。在一些实施例中，等离子气供给管线122可被配置在支承结构118内。在支承结构118中包括气体供给管线可保护气体管线在维护操作中不受伤害。此外，在一些设置中，传导薄膜在一些气体管线上的不定(adventitious)成形可能导致跨绝缘器的不想要的电泄漏。将气体管线定位在支承结构118中可防止在气体管线上的这种薄膜成形。
在一些实施例中，等离子气分配器114可包括一个或多个反应气馈给进口204，该反应气馈给进口204被定位以将反应气提供给等离子发生区108。反应气可经由反应气供给管线(见图1中的反应气供给管线124)被传递至反应气馈给进口204。在一些实施例中，前体气供给管线126可被包括在支承结构118内。在一些实施例中，反应气可经由一个或多个等离子气馈给进口202被提供给等离子反应区108。在这些实施例中，反应气可经由专用的反应气供给管线或通过使反应气通过等离子气供给管线122馈送而被提供给等离子气馈给进口202。
前体气分配器116包括多个前体气馈给进口206以及多个等离子通路208。设置前体气馈给进口206以使前体气被引导朝向反应区110，并最终朝向衬底106的暴露表面。类似地，等离子通路208是设置在前体气分配器116中的开口以使游离基被传递至反应区110。
等离子通路208将等离子发生区108中产生的游离基传递至反应区110。要理解，可以任何适宜的数量引入任何适宜尺寸的等离子通路208而不脱离本公开的范围。
在一些实施例中，可鉴于反映前体气分配器116附近和/或等离子通路内的环境中的流体和/或分子运动状态的一个或多个无量纲值而设计一个或多个等离子通路208的关键尺寸。在本文中，关键尺寸指可在前体气分配器116的设计阶段中使用的尺寸。该尺寸在任何意义上都不旨在作为限定性尺寸，但为了讨论在这里描述。换句话说，该值对本文披露的分配器或任何其它硬件的操作或功能并非关键的。相反，关键尺寸可充当在设计和制造过程中其它尺寸的基准值。
在一些实施例中，一个或多个等离子通路208的关键尺寸可鉴于流体的马赫数来确定。马赫数是将游离基的速度关联于声音在游离基在该压力和温度下经过的流体中的速度的无量纲数。马赫数可被表示为：
其中M是马赫数，V是流体速度，而c是声音因变于温度和压力对于该流体的速度。不希望被理论所囿，相对于具有较低马赫数的游离基，具有较高马赫数特征的游离基在通过等离子通路208行进时不大可能通过碰撞而熄灭。这可源自与游离基相关的表面碰撞或分子间碰撞的比较概率。
在一些实施例中，一个或多个等离子通路208的关键尺寸可至少部分地鉴于克努森数来确定。克努森数是将游离基的平均自由路径关联于等离子通路的特征物理尺寸(例如关键尺寸)的无量纲数，通过下式表达：
其中kn是克努森数，λ是等离子通路208的关键尺寸，而l是游离基平均自由路径。以另一种方式，等离子通路208可被设计成使游离基在从中经过时不大可能通过与界定等离子通路208的一部分的壁或表面的碰撞而熄灭。在一些条件下，与等离子通路208的碰撞之间的平均自由路径可近似于相对于与另一分子或游离基的碰撞的平均自由路径，其定义如下：
其中l是平均自由路径，k是Boltzmann常数，T是温度，d是游离基直径而P是具体等离子通路208中的局部压力。随着kn幅度增加，来自等离子通路208的侧壁的表面效应可相对于游离基的平均自由路径增加。相反地，随着Kn幅度减小，通过等离子通路208的游离基通行可变得更为颤搐(ballistic)。因此，在一些实施例中，可至少部分地基于所选择的克努森数来确定λ。
要理解，前面提到的关键尺寸可包括对通过等离子通路208的流体产生影响的任何适宜尺寸。例如，在一些实施例中，关键尺寸可以是等离子通路208沿一个方向的少数尺寸或最小尺寸。关键尺寸可代表游离基朝向晶片经过的间隙的垂直尺寸，如图2的116以及图6、图7的610所示。替代地，关键尺寸可被视为相同的附图中示出的水平间隙。要理解，垂直间隙与水平间隙之比构成一无量纲的高宽比，这可以是一个重要的考量因素，因为高的高宽比比具有低的高宽比的间隙构成更大的约束和更大的游离基再组合。
此外要理解，不同的等离子通路208根据在前体气分配器116中的定位可具有不同的尺寸。例如，在一些实施例中，较远离前体气分配器116的中心定位的等离子通路208相比较靠近中心定位的等离子通路208可具有较大的开口。等离子通路尺寸的变化(例如在某些实施例中依赖于半径)可补偿上游流体变化，例如在层流外形存在于上游的实施例中。例如，在等离子发生区108中的层流分配可针对反应区110中的活塞流分配被重新构形。
不管在前体气分配器116中等离子通路208形状和/或尺寸如何，要理解在一些实施例中也可考虑游离基寿命以外的因素。例如，可确定通路的形状和尺寸以使通过反应器的游离基流基本呈单向(例如从等离子发生区108朝向反应区110)以避免游离基和包括各种等离子敏感的前体的其它工艺气的逆流。要理解可通过喷头的顶部和底部之间微小的压力差来实现优化的气体流动。微小的压力差有助于均衡跨喷头直径的流动。
然而，增加压力差的设计可权衡考虑使高比例的游离基顺利通过喷头间隙的潜在需要。
前体气分配器116也包括多个前体气馈给进口206，这些前体气馈给进口206将前体气分配给位于等离子发生区108下游的反应区110。由于前体气的局部流动可能影响该位置的薄膜成形率，因此在一些实施例中，各前体气馈给进口206可被定位和/或设计尺寸/构形以使前体气具有朝向衬底的选择性流动外形。
例如，在一些实施例中，可选择前体气馈给进口206的数量和/或尺寸的径向分布(相对于工艺气分配器112的中轴线)以在出口处、在反应区110内和/或在衬底106的暴露表面处取得前体的(可接受的容限内的)均匀流。假设衬底106的中心点对准于工艺气分配器112的中轴线，这一流动状态可增加衬底内薄膜厚度的均一性。当然要理解，可形成任何适宜的流动外形以调整任何适宜的薄膜性质，包括体积性质、界面性质、电气性质、物理性质等等。
前体经由适宜的气体分配结构被提供给前体气馈给进口206，所述前体气馈给进口206流体地耦合于一个或多个气体供给管线(见图1中的前体气供给管线126)。在一些实施例中，前体气供给管线126可被包括在支承结构118内。在图2所示实施例中，前体气分配器116包括多个方位角前体气分配器210以及多个径向前体气分配器212。图3示意地示出图2所示前体分配器116的实施例的俯视立体图，并示出这些结构相对于彼此和相对于等离子通路208的关系。
在图2和图3所示的例子中，配置这些分配器以使前体气馈给进口206可绕支承结构118同心地设置。前体气馈给进口206可被包含在这些分配器中的任一个或两者中。如此配置，前体气可被分配至反应区110以及衬底106的暴露表面而不会显著地改变流过反应器的游离基和/或等离子气的流动方向。由于流动的变化在某些配置下可能导致缺陷产生和/或厚度不均一，因此图2和图3所示的流动状态(例如基本向下方向)可减少衬底加工过程中潜在的缺陷引入和/或厚度漂移。
在图2和图3所示的例子中，多个气体分配臂214中的每一个将一部分前体气从包含在支承结构118中的前体气供给管线在前体气进入位置216传递至方位角前体气分配器210和径向前体气分配器212，所述前体气进入位置216位于前体气分配器116的中心和外缘之间。分割在气体进入位置上游的前体流体并如图所示的传递它有助于克服方位角前体气分配器210和径向前体气分配器212中的压力降，这样做可能提高反应区110的分配效率。
要理解，可采用任何适宜的前体气分配器而不脱离本公开的范围。例如，图4示意地示出前体气分配器400的另一实施例的横截面图，而图5示意地示出如图4所示的前体气分配器400的俯视立体图。在图4和图5所示的例子中，在位于前体气分配器400中心的前体气进入位置402提供前体气。从中央位置提供前体气可提供一种简单、强健的手段以相对于图2和图3所示例子使用较不复杂的前体气分配器来分配前体气。一旦从中心位置提供，前体气经由前体气馈给进口分配，该前体气馈给进口可包含在方位角前体气分配器404和/或径向前体气分配器406中。
作为又一例子，图6示意地示出包括无混合喷头组件602的前体气分配器600的一个实施例的横截面。图7示意地示出图6所示的前体气分配器600的实施例的俯视立体图。如图6所示，无混合喷头组件602包括顶部结构604和底部结构606。当被组装时，这些结构形成多个前体气馈给进口608以及多个等离子通路610。无混合喷头组件602由支承结构612支承以使前体气被引入到等离子发生区108(见图1)的下游。在图6和图7所示的例子中，前体气是从包含在支承结构612中的前体气供给管线提供的。无混合喷头组件602中的前体气分配通道将前体气导向至前体气馈给进口608以供分配给反应区110。
要理解，前体气在某些实施例中也可经由被配置成在向反应区110传递之前混合前体气和等离子/游离基气的喷头被分配。例如，该混合可发生在适宜的混合喷头中，但发生在等离子发生区108的下游。
在一些实施例中，前体气分配器116可包括一个或多个反应气馈给进口，该反应气馈给进口被定位以将反应气提供给反应区110。反应气可经由反应器供给管线或通过另一适宜的供给管线馈送反应器而被传递至这些反应气馈给进口，在某些实施例中前述两者中的任一者被包含在支承结构118中。
回到图2，等离子气分配器114和前体气分配器116是由支承结构118支承的。在图2所示例子中，支承结构118同轴地支承等离子气分配器114和前体气分配器116，以使前体气分配器116沿共同轴线从等离子气分配器114中伸出。因此，在图2所示的实施例中，工艺气分配器112通过反应器102从上方支承，由此在前体气分配器116和反应器102的侧壁之间形成一间隙(见图1)。如下文中更详细描述地，这有助于当筛分离子时维持前体气分配器116的电绝缘。尽管图1或图2中未示出，然而要理解在一些实施例中可提供一个或多个补充支承件来支持前体气分配器16和/或工艺气分配器112。例如，在一个场景中，可在前体气分配器116的外周边缘处设置一个或多个绝缘支架。这些支架在辅助工艺气分配器112的结构支承的同时能维持一电隙或流隙。
中心地支承气体分配器也可将工艺气分配器112的中轴线定位在衬底106的中心之上。进而，在反应区110内和在衬底106的暴露表面上的径向气体分配相对于其中等离子气或前体气中的一个或多个从侧部位置被引入的示例有了相当的改善。换种说法，将前体气引入到前体气分配器116以使其从位于中心的支承结构118朝向前体气分配器116的边缘径向向外流动可改善在衬底106的表面之上的前体气分配。相反，将气体从侧部注入到气体分配器可能导致分配器中不均一的压力分配。进而，较少的气体可相对于更靠近侧部注入器的退出位置背离侧部注入器地离开分配器的侧部。衬底厚度和/或微粒分布在一些工艺中可能会保留下这种分配不均一性，这可能导致楔形厚度分布和/或微粒飞溅。通过相对于位于中心的支承结构118向等离子气分配器114和前体气分配器116提供气体流，所公开的实施例相对于工艺气分配器112的中心能改善径向气体分配均一性。进而，本文公开的气体分配分布可演化成相对于衬底106中心位置的径向均一性。
支承结构118也包括设置在等离子气分配器114和前体气分配器116之间的电绝缘器120以适应这些分配器之间的电压差。在气体分配器之间提供电压差可使前体气分配器116充当等离子发生区108的离子过滤器。进而，在滤除离子的同时可将游离基提供给反应区110，这可能减少对衬底106的离子轰炸损伤。在图1所示的实施例中，偏置源128经由第一电连接130电耦合于前体气分配器116并经由第二电连接132电耦合于等离子气分配器114。
例如，图1示出适于在等离子气分配器114和前体气分配器116之间建立电压差的偏置源128。在等离子发生区108中产生的离子可通过前体气分配器116被收集。在一些实施例中，偏置源128可包括适宜的DC电源。在一些其它实施例中，偏置源128可以是接地。
在一些实施例中，扼流线圈134可与偏置源128电耦合。扼流线圈134可防止无线电频率能量进入和损害偏置源128。要理解，适当的扼流线圈可被包含在其它功率源、气体管线、冷却管线和诸如此类的结构中，从而如本文所述地减轻RF泄漏。
示例性薄膜沉积反应器也可包括绝缘的密闭容器136，该绝缘的密闭容器136被配置成将等离子发生区108与环境状况分隔开。因此，绝缘的密闭容器136可使用真空源(见图1)工作，由此等离子发生区108相对于环境工作在降低的压力下。在图1所示的例子中，用于在等离子发生区108中诱导出等离子的ICP线圈138被设置在绝缘的密闭容器136的一部分侧壁周围。电磁屏蔽140覆盖ICP线圈138以将ICP线圈138产生的磁场同周围环境屏蔽开。绝缘的密闭容器136可由任何适宜的电绝缘材料形成。例如在一些实施例中，可使用石英来形成绝缘的密闭容器136，尽管在某些实施例可采用其它介电材料。
在薄膜成形期间各种质量转移和/或运动过程可能导致所形成的薄膜中的径向厚度变化或某些其它性质(例如密度、折射率等)的径向变化。因此，在某些薄膜成形工艺中，改变反应区110内的游离基的径向密度是有帮助的。在一些实施例中，可通过调整等离子发生区108内的流体动力参数来调整游离基的径向分布。
在一些实施例中，等离子发生区108中的流体可被调整以形成层流态。理论上，层流态避免紊流，由此远离边界层定位的流体要素可在流体路径的恒定直径部分内保持在大致相同的径向位置。因此，层流态可为径向传输提供一种稳定的、可预测的流态。
在一些实施例中，这些流态可通过绝缘的密闭容器136的选择性构形来形成。例如，图8示出绝缘的密闭容器800的实施例，该绝缘的密闭容器800具有侧壁802，该侧壁802在低压面(例如侧壁802暴露于诸如等离子发生区108的低压环境的表面)上表现出有助于在典型流动条件下在容器内形成层流的外形。在图8所示实施例中，示例性ICP线圈布置位置804被图示为位于侧壁802的外表面周围以示出等离子发生区108可形成在其中。在图8所示例子中，侧壁802表现出一横截面，如果沿中轴线沿横截面观察的话，该横截面在进口806附近朝向对称中轴线向内弯曲(见图2中的808)并随后在出口810附近相反地向外弯曲(见图2中的812)。图8所示的瓶状容器在一些实施例中可改善游离基的半径分布，以相比不提供层流态的容器使朝向衬底106的暴露表面的游离基通量更均匀地跨表面分布。
作为又一例子，图9示出绝缘的密闭容器900的实施例，该绝缘的密闭容器902具有侧壁902，该侧壁802在低压面(例如侧壁802暴露于诸如等离子发生区108的低压环境的表面)上表现出有助于在典型流动条件下在容器内形成层流的外形。为清楚起见，图9未示出示例性ICP线圈的布置位置，尽管可以理解等离子发生区108可形成在其中。在图9所示例子中，侧壁902表现出一横截面，如果沿中轴线沿横截面观察的话，该横截面在进口904附近朝向对称中轴线向外弯曲(见图2中的906)并随后在出口908附近相反地向内弯曲(见图2中的910)。图9所示的角状容器也可改善游离基的径向分配，以使朝向衬底106暴露表面的游离基通量更均匀地跨表面分布。
可以理解，层流外形可通过任何适宜形状产生，包括具有侧壁的容器，其侧壁的外形表现出对图8和图9所示的过渡形状。例如，在一些实施例中，具有层流外形的容器可表现出在某些方面单调的横截面(例如角状)。在一些实施例中，层流态也可通过在反应器内对气体流速等的适宜调整被建立和/或控制。
要理解，游离基的径向分布也可被动态地调整(例如在加工过程中和/或不改变等离子发生区108的形状)。例如，图1将ICP线圈138图示为单线圈，它包括多个等离子密度调整抽头142，用以改变相应等离子发生区108中的等离子密度。用于产生等离子的功率经由多抽头变压器148从ICP电源144和匹配网络146被提供给ICP线圈138。可调整等离子密度调整抽头142中的每一个以改变相应等离子区150内的功率。改变各等离子区150中的功率改变了游离基的发生率，从效果上改变了等离子发生区108内的游离基径向分配。
使用具有多个等离子密度调整抽头142的单个ICP线圈138相对于包括多个线圈和相关电源的系统可提供改变等离子密度的相对较不复杂的方法。替代地，在一些实施例中，ICP系统104可包括多个独立ICP线圈和相关电源，它们能独立地改变等离子区150中的等离子密度。
在图1所示的实施例中，每个等离子密度调整抽头142包括用来调整每个等离子区150中的功率的等离子密度调谐器152。如图1所示，等离子密度调谐器152包括用来调整区衰减(例如经由可变电容器)以及调整区相移(例如经由可变电感器)的组件。在一些实施例中，等离子密度调谐器152可以是纯无源/电抗性的，它不包括晶体管或其它有源组件。
要理解，前面讨论的层流态可提供可预测、稳定的流，其中游离基数量在某些实施例中可在逐区的基础上调整。换种说法，游离基可根据选定的径向分配在等离子发生区108中产生。这些游离基随后可藉由在反应器中形成的适宜层流态朝反应区110移动而几乎没有紊流混合，这可能在衬底106的暴露表面提供选定的游离基分配。同时，前体气也被提供给衬底106的暴露表面而不使前体气暴露于等离子发生区108。进而，可在衬底106上形成薄膜，该薄膜表现出相对较少的微粒缺陷和/或表现出电气或物理性质的选定径向外形。
作为示例，图10示出一流程图，其阐述了以电感耦合的等离子(ICP)加工工具在半导体衬底上形成薄膜的方法1000的实施例的流程图。要理解，方法1000的实施例可通过任何适宜硬件来执行，包括本文公开的硬件。此外要理解，方法1000所描述的一部分工艺可被省去、重新排序和/或补充而不脱离本公开的范围。
在1002，方法1000包括将半导体衬底支承在基座上以使半导体衬底暴露于电感耦合的等离子(ICP)加工工具内的反应区。在一些实施例中，将衬底支承在反应器内可包括在加工衬底之前将一个或多个反应器状态，例如温度、压力和/或载气(例如Ar、N2或He)调整至适宜薄膜成形的条件。要理解，该薄膜成形条件可根据薄膜沉积工艺化学药剂、衬底表面终端等因素而改变。
例如，可调整反应器条件以通过活化表面吸附和分解工艺从适宜的薄膜前体形成表面活性物种。在一些场景下，可调整反应器条件以避免一种或多种工艺气的气相分解反应，这可能避免来自分解产物的薄膜污染和/或源自扩散效果的糟糕阶梯覆盖。此外，在一些场景下，可调整反应器条件以避免工艺气冷凝在各反应器表面上，这可能避免小微粒缺陷产生过程。
在图10所示例子中，方法1000在步骤1002将衬底支承在反应器中之后进入薄膜成形循环。在本文中，薄膜成形循环指薄膜成形事件，它包括单单前体暴露于衬底和单单游离基暴露于衬底。要理解，在薄膜成形循环中可对反应器条件作出任何适宜调整，包括在薄膜成形循环内被提供给反应器的各气体的温度、压力和/或流速。图10所示的薄膜成形循环包括工艺1004-1014。要理解，图10所示的薄膜成形循环中示出的工艺的配置和顺序仅为示例目的而给出，并在一些实施例中可以任何适当的方式改变。
在1004，方法1000包括将前体气提供给反应区。由于前体可能对等离子敏感(例如由于前体可能不合需地在等离子存在的情况下起反应)，前体被引入到反应区时不会暴露于等离子状态。例如，前体可经由适宜的前体气分配器被引入到反应区。要理解，被提供给反应区的前体气的量可尤其根据衬底的暴露表面的地貌、反应区内存在的薄膜形成条件以及吸附速度和/或在这些条件下前体在表面上的附着系数而变化。
在1004将前体气提供给反应区包括半导体衬底的暴露表面的反应性前体中间产物的吸附。不希望被理论所囿，当前体被提供给反应区时，前体的气相分子可吸附在衬底的暴露表面上。一些气相分子在活化了这类化学吸附反应的表面某些点位变得被化学性地吸附(例如被化学吸附)。这些化学吸附的物种可形成前体的表面活化中间物种。由于这些中间物种直到进一步的反应发生为止都囿于至少一个表面点位，因此前体的吸附可能以自我限制的方式发生。进而，在薄膜成形循环期间形成的薄膜可至少部分地由活化物种与接下去提供的反应物的表面反应而被缓和，如下文中更详细描述的那样。
在前体被提供给反应区并且中间产物变得被吸附于衬底之后，一般去除残留的前体。由此，在1004将前体气提供给反应区在一些实施例中可包括从反应区去除前体。从反应区去除前体包括去除前体的气相分子以及在表面上冷凝但未被化学吸附于表面的前体分子。这些被物理性地吸附的(例如物理吸附)分子可冷凝在一层以上的表面或可以不均一方式分布(例如冷凝在形成于暴露表面内的狭窄开口中)。去除非化学吸附的前体分子可防止这些分子与之后引入的反应物的反应和/或辅助沉积厚度控制。换种说法，去除残留前体可避免不均匀、不共形薄膜成形和/或小微粒缺陷产生。要理解，可采用任何适宜的方法从反应区去除残留前体而不脱离本公开的范围。例如，在一些实施例中，反应器可被抽真空至底压。作为附加或替代，在一些实施例中，反应器可被提供以适宜的置换气，例如Ar、N2或He。
一旦被化学吸附于表面，前体中间产物等待等离子活化的反应以完善薄膜层。如下文中更详细描述的，在一些实施例中，前体中间产物可直接与反应物游离基(例如，形成在等离子发生区并被提供给反应区的经等离子活化的反应物)反应，而在其它实施例中，游离基本身对于衬底而言是可化学吸附的。
此外，在一些实施例中，反应物可在等离子发生和游离基传递之前被提供给反应区和衬底表面，如1006所示那样。例如，反应物气体可经由适宜的等离子气分配器被引入到等离子发生区并允许向下游流入反应区。在另一例子中，反应气可经由适宜的前体气分配器被引入到反应区。一旦被提供，反应气物种可吸附至衬底表面。因此，在一些实施例中，将反应物提供给反应区可包括衬底吸附反应物的反应性中间产物。
如果在1006提供了反应气，则在一些实施例中工艺1006也可包括去除残留反应气。去除残留反应物可避免不均匀、不共形薄膜成形和/或小微粒缺陷产生。要理解，可采用任何适宜的方法从反应区去除残留反应物而不脱离本公开的范围。例如，在一些实施例中，反应器可被抽真空至底压。作为附加或替代，在一些实施例中，反应器可被提供以适宜的置换气，例如Ar、N2或He。替代地，在一些实施例中，反应气可保持在反应区和/或为等离子产生所准备的等离子发生区，如下文中更详细描述的那样。
工艺1006也可包括去除残留反应气。去除残留反应物可避免不均匀、不共形薄膜成形和/或小微粒缺陷产生。要理解，可采用任何适宜的方法从反应区去除残留反应物而不脱离本公开的范围。例如，在一些实施例中，反应器可被抽真空至底压。作为附加或替代，在一些实施例中，反应器可被提供以适宜的置换气，例如Ar、N2或He。替代地，在一些实施例中，反应器可保持在反应区和/或为等离子产生所准备的等离子发生区，如下文中更详细描述的那样。
在1008，方法1000包括将等离子气提供给等离子发生区，并在1010从等离子发生区内的等离子气产生游离基以通过等离子产生游离基的脉冲。在一非限定例子中，等离子功率可循环地接通和切断以形成游离基脉冲。在另一例子中，等离子可被维持在等离子发生区，而选定的等离子气和/或反应气被脉冲送入等离子发生区以产生游离基脉冲。
要理解，等离子气可以任何适宜方式被引入到等离子发生区。例如，等离子气可经由适宜的等离子气分配器被引入到等离子发生区。此外，可提供任何适宜的等离子气。其非限定例子包括Ar、H2和He。
要理解，可采用任何适宜的方式产生等离子而不脱离本公开的范围。例如，可使用适宜的ICP源和线圈以在等离子发生区内撞击出等离子。在一些实施例中，在游离基发生过程中的等离子密度可经由一个或多个等离子密度调整抽头或通过改变被提供给独立ICP线圈的功率在等离子发生区内调整，所述等离子密度调整抽头电耦合于ICP线圈。等离子区内的等离子密度的调整可提供在等离子发生区和在反应区下游内调整径向等离子密度的方法。此外，在一些实施例中，在等离子发生期间产生的离子可使用适宜的离子过滤器被滤除。例如，前述前体气分配器可与偏置源一起使用以从气体流中滤除离子。收集离子可避免对衬底表面可能的离子轰击损害。
在一些实施例中，可从在等离子发生期间出现在/被提供给反应区的反应气产生反应物游离基。换句话说，可使用非反应性等离子来产生反应物游离基以传递至衬底表面并随后于在其上吸附的前体中间产物反应。在一些实施例中，来自反应性等离子的游离基(例如反应性等离子气)可被提供给衬底表面以进行反应。
在1012，方法1000包括将游离基传递给反应区。例如，可经由类似于前面描述的那些前体气分配器中包括的等离子通路将游离基传递至反应区。一旦被传递至反应区，游离基与表面吸附的中间产物反应以形成薄膜层。因此，方法1000包括在1014在衬底表面上形成薄膜。在一些实施例中，形成薄膜可包括游离基与吸附于暴露表面的前体中间产物起反应以形成薄膜。例如，游离基可直接与被吸附的前体中间产物起反应以形成薄膜层。在一些其它实施例中，形成薄膜可包括游离基与吸附于暴露表面的前体中间产物和反应物中间产物起反应以形成薄膜。例如，游离基可活化表面上的被吸附的反应物和前体的中间物之间的反应。在又一实施例中，形成薄膜可包括活化反应区内的游离基和气相反应物之间的气相反应，这些反应触发了与表面吸附的前体中间物的表面反应。
在形成薄膜之后，在一些实施例中，等离子功率可被切断并且残留游离基可从等离子发生区和反应区中被移除。要理解，可采用任何适宜的去除残留等离子气的方法而不脱离本公开的范围。例如，在一些实施例中，反应器可被抽真空至底压。作为附加或替代，在一些实施例中，反应器可被提供以适宜的置换气，例如Ar、N2或He。替代地，在一些实施例中，等离子气可在等离子功率被切断的同时保持在反应器中。
由于薄膜层可经由自我限制的吸附和反应工艺形成，因此在一些实施例中每个薄膜成形循环可得到在可接受容限内的可预测厚度薄膜。结果，在一些这样的实施例中，可通过将该薄膜成形循环重复适宜的次数来形成任何适宜厚度的薄膜。因此，方法1000包括在1018确定是否形成另一层的薄膜。如果要形成另一层，则方法1000返回到1004；如果不，则薄膜成形结束并在1020将衬底从反应器移走。
尽管方法1000一般地描述了原子层沉积薄膜成形工艺，然而要理解可采用任何适当的薄膜成形工艺而不脱离本公开的范围。在一些实施例中，由等离子增强的ALD(PEALD)提供的逐层薄膜成形工艺可实现薄膜厚度准确、可预测的控制。然而，在一些实施例中，可采用等离子增强的化学汽相沉积(PEVD)，因为PECVD技术一般相比PEALD工艺以相对更快的沉积速度形成薄膜。
在一些实施例中，形成本文所述的薄膜的薄膜沉积反应器和方法可使用适宜的半导体加工工具来形成。图11示意地示出包括多个半导体加工模块1102的半导体加工工具1100的实施例的俯视图。尽管所示出的实施例包括两个模块，但要理解可提供任何适宜数量的半导体加工模块。例如，一些加工工具可仅包括一个模块，而另外一些加工工具可包括两个以上的模块。
图11还示出了多个加载锁1104，用于在半导体加工工具1100的各个位置之间移动衬底，该加载锁1104表现出环境大气压状态以及处于比大气条件更低的压力下的工具部分。包括大气衬底操纵机械手1110的大气传递模块1108使衬底在加载舱口1106和加载锁1104之间移动，其中一部分环境压力由真空源(未示出)去除或通过用适宜气体回填来恢复，这取决于衬底是被转移入还是转移出工具。低压衬底操纵机械手1112使衬底在低压传递模块1114内在加载锁1104和半导体加工模块1102之间移动。也可使用低压衬底操纵机械手112使衬底在低压传递模块1114中在各半导体加工模块1102之间移动，由此可执行衬底的顺次和/或并行的加工而不使之暴露于空气和/或没有真空间断(vacuum break)。
图11也示出了连接至系统处理控制器1122的用户界面1120。用户界面1120适于接收至系统处理控制器1122的用户输入。用户界面1120可选择地包括显示子系统以及适宜的用户输入设备，例如键盘、鼠标、控制板和/或触摸屏，这些东西在图11中未被示出。
图11示出为控制半导体加工工具1100提供的系统处理控制器1122的实施例。系统处理控制器1122可运作工艺模块控制子系统，例如气体控制子系统、压力控制子系统、温度控制子系统、电气控制子系统以及机械控制子系统。这些控制子系统可接收由传感器、中继器和控制器提供的各种信号并响应地作出适当的调整。
系统处理控制器1122包括计算系统，它包括数据保持子系统1124和逻辑子系统1126。数据保持子系统1124可包括一个或多个物理的、非临时的设备，它被配置成保持可由逻辑子系统1126执行以实现本文所述的方法和工艺的数据和/或指令。逻辑子系统1126可包括被配置为执行保存在数据保持子系统1124中的一个或多个指令的一个或多个物理设备。逻辑子系统1126可包括被配置成执行软件指令的一个或多个处理器。
在一些实施例中，这些指令可控制工艺处方的执行。总地来说，工艺处方包括用于加工衬底的工艺参数的顺序描述，这些参数包括但不限于，时间、温度、压力和浓度以及表述衬底加工过程中工具的电气、机械和环境方面的各个参数。这些指令也控制在维护程序中使用的各种维护处方的执行。
在一些实施例中，这些指令可被存储在可移动的计算机可读存储介质1128上，该计算机可读存储介质1128可用来存储和/或转移可执行以实现本文描述的方法和工艺的数据和/或指令，除了信号本身。要理解，可采用任何适宜的计算机可读存储介质1128而不脱离本公开的范围。非限定性例子包括DVD、CD-ROM、软盘和闪存驱动器。
应该理解，此处所述的配置和/或方法在本质上是示例性的，并且这些具体实施例或示例不应被认为是局限性的，因为多个变体是可能的。此处所述的具体例程或方法可表示任何数量的处理策略中的一个或多个。由此，所示出的各个动作可以按所示的顺序执行、按其它顺序执行、或者在某些情况下被省略。
本公开的主题包括各种过程、系统和配置、此处所公开的其他特征、功能、动作、和/或特性、以及其任何和全部等效物的所有新颖和非显而易见的组合和子组合。

Claims (20)

1.一种使用电感耦合的等离子(ICP)加工半导体衬底的薄膜沉积反应器，所述薄膜沉积反应器包括：
工艺气分配器，其包括：
支承结构；
等离子气分配器，所述等离子气分配器由所述支承结构支承并且包括等离子气馈给进口，所述等离子气馈给进口被定位以将等离子气提供给所述薄膜沉积反应器中的等离子发生区，以及
前体气分配器，所述前体气分配器由所述支承结构支承并且包括前体气馈给进口，所述前体气馈给进口被定位以将薄膜前体气提供给所述等离子发生区的下游；
绝缘的密闭容器，所述绝缘的密闭容器被配置成在所述薄膜沉积反应器中将所述等离子发生区维持在降低的压力下；
ICP线圈，所述ICP线圈被设置在所述绝缘的密闭容器的一部分侧壁周围并被定位成使所述侧壁将所述等离子发生区与所述ICP线圈隔开；以及
基座，所述基座被配置成支承所述半导体衬底以使所述半导体衬底的薄膜沉积表面暴露于被形成在所述工艺气分配器下游的反应区。
2.如权利要求1所述的薄膜沉积反应器，其特征在于，所述工艺气分配器包括：
电绝缘器，所述电绝缘器设置在所述等离子气分配器和所述前体气分配器之间以适应所述等离子气分配器和所述前体气分配器之间的电压差；
其中所述支承结构包括流体地耦合至所述前体气馈给进口的前体气供给管线以及流体地耦合至所述等离子气馈给进口的等离子气供给管线。
3.如权利要求2所述的薄膜沉积反应器，其特征在于，所述等离子气分配器包括流体地耦合至包含在所述支承结构中的反应气供给管线的反应气馈给进口。
4.如权利要求2所述的薄膜沉积反应器，其特征在于，所述前体气分配器包括多个方位角前体气分配器以及多个径向前体气分配器，并且所述前体气分配器包括多个等离子通路开口，所述等离子通路开口被形成在所述多个方位角前体气分配器和所述多个径向前体气分配器之间。
5.如权利要求4所述的薄膜沉积反应器，其特征在于，所述多个径向前体气分配器包括位于所述前体气分配器中心的前体气进入位置。
6.如权利要求4所述的薄膜沉积反应器，其特征在于，所述多个径向前体气分配器包括位于所述前体气分配器的中心和外缘之间的一个或多个前体气进入位置。
7.如权利要求2所述的薄膜沉积反应器，其特征在于，所述前体气分配器包括无混合喷头组件，所述无混合喷头组件包括多个前体气馈给进口和多个等离子通路开口。
8.如权利要求1所述的薄膜沉积反应器，其特征在于，所述绝缘的密闭容器的低压侧壁具有层流外形。
9.如权利要求1所述的薄膜沉积反应器，其特征在于，所述ICP线圈是包括耦合至单个功率变压器的多个等离子密度调整抽头的单线圈。
10.如权利要求1所述的薄膜沉积反应器，其特征在于，还包括各自具有独立RF功率源的多个ICP线圈。
11.一种用于被配置成使用电感耦合的等离子(ICP)加工半导体衬底的薄膜沉积反应器的工艺气分配组件，所述工艺气分配组件包括：
支承结构，所述支承结构包括前体气供给管线和等离子气供给管线；
由所述支承结构支承的等离子气分配器，所述等离子气分配器包括流体地耦合至所述等离子气供给管线的一个或多个等离子气馈给进口；
由所述支承结构支承并从所述等离子气分配器伸出的前体气分配器，所述前体气分配器包括流体地耦合至所述前体气供给管线的一个或多个前体气馈给进口；以及
电绝缘器，所述电绝缘器设置在所述等离子气分配器和所述前体气分配器之间以适应所述等离子气分配器和所述前体气分配器之间的电压差。
12.如权利要求11所述的工艺气分配组件，其特征在于，所述支承结构同轴地支承所述等离子气分配器和所述前体气分配器。
13.如权利要求11所述的工艺气分配组件，其特征在于，所述前体气分配器包括多个方位角前体气分配器以及多个径向前体气分配器，并且所述前体气分配器包括多个等离子通路开口，所述等离子通路开口被形成在所述多个方位角前体气分配器和所述多个径向前体气分配器之间。
14.如权利要求13所述的工艺气分配组件，其特征在于，所述多个径向前体气分配器包括位于所述前体气分配器中心的前体气进入位置。
15.如权利要求13所述的工艺气分配组件，其特征在于，所述多个径向前体气分配器包括位于所述前体气分配器的中心和外缘之间的一个或多个前体气进入位置。
16.如权利要求11所述的工艺气分配组件，其特征在于，所述前体气分配器包括无混合喷头组件，所述无混合喷头组件包括多个前体气馈给进口和多个等离子通路开口。
17.一种在包括等离子发生区、反应区和如权利要求11所述的工艺气分配组件的电感耦合的等离子(ICP)加工工具中在半导体衬底上形成薄膜的方法，所述等离子发生区位于所述反应区的上游，所述方法包括：
将所述半导体衬底支承在基座上以使所述半导体衬底暴露于所述ICP加工工具中的反应区；
在第一阶段：
将前体气引入到所述反应区，以及
使反应性前体中间产物吸附至所述半导体衬底暴露的表面；
在第二阶段：
将等离子气提供给所述等离子发生区，
在具有ICP源的等离子发生区内通过所述等离子气产生游离基，
将游离基传递至所述反应区，以及
使游离基与吸附于被暴露的表面的前体中间产物起反应以形成所述薄膜。
18.如权利要求17所述的方法，其特征在于，将前体气引至所述反应区包括：
将所述前体气从包含在定位于中心的前体气分配器支承件中的前体气供给管线提供给前体气分配器；
引导所述前体气分配器中的前体气以使其从位于中心的前体气分配器支承件朝向所述前体气分配器的边缘径向地流动；以及
从位于所述位于中心的前体气分配器支承件和所述前体气分配器边缘之间的多个前体气馈给进口排出来自所述前体气分配器的前体气，由此所述前体气被引向半导体衬底暴露于所述反应区的表面。
19.如权利要求17所述的方法，其特征在于，产生游离基包括：
在所述等离子发生区内产生游离基；以及
通过改变所述等离子发生区内的等离子的径向密度用所述等离子产生游离基的径向分布。
20.如权利要求17所述的方法，其特征在于，在第三阶段中：
将前体气引入到所述所述反应区；
使反应性反应物中间产物吸附至所述半导体衬底暴露的表面；以及
使游离基与吸附于被暴露的表面的反应物中间产物起反应以形成所述薄膜。
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US20140073143A1 (en) 2014-03-13
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