CN110494968A - 用于制造半导体装置的设备和方法 - Google Patents
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Abstract
本发明涉及一种用于制造半导体装置的设备,其包括:反应室,所述反应室包括用于保持衬底的衬底保持器;以及用于加热所述衬底的加热器。所述加热器可以包括竖直腔表面发射激光器,所述竖直腔表面发射激光器被构造和布置成将辐射束发射到由所述衬底保持器保持的衬底以加热所述衬底。
Description
技术领域
本发明总体上涉及用于制造半导体装置的设备和方法。更具体地,本发明涉及一种设备,其包括:
反应室,所述反应室具有用于保持衬底的衬底保持器;以及
用于加热所述衬底的加热器。
背景技术
用作反应器的高温炉子可以用作反应室以在半导体衬底上产生精细尺寸的结构,例如集成电路。例如硅晶片的若干衬底可以放置在衬底保持器上,例如在反应器内部的衬底架或舟皿。另一选择为,单个衬底可以放置在衬底保持器上,例如在反应器内部的衬底基座。可以将衬底和保持器都加热到所需温度。在典型的衬底处理步骤中,使反应气体在加热的衬底上通过,从而在衬底上沉积反应物材料或气体反应物的薄层。
衬底上的一系列此类处理步骤被称为工作程序。如果沉积层具有与底层硅衬底相同的结晶结构,则沉积层被称为外延层。沉积层有时也被称为单晶层,因为其仅具有一种晶体结构。通过后续的沉积、掺杂、光刻、蚀刻和其它工艺,这些层被制成集成电路,从而生产数十到数千或甚至数百万个集成装置,这取决于衬底大小和电路复杂性。
仔细控制各种工艺参数以确保所得层的高质量。一个这样的关键参数是在每个工作程序步骤期间的衬底温度。例如,在CVD期间,沉积气体在特定温度窗口内反应并沉积在衬底上。不同的温度还导致不同的沉积速率。因此,重要的是在处理开始之前准确地控制衬底温度以使衬底达到期望的温度。
极其影响处理反应器的生产量的一个因素是衬底温度的上升速率。在给定工作程序期间的若干点处可能需要这种温度上升。例如,必须将冷衬底加热至适当的处理温度。同样,对于不同的处理步骤,工作程序可能需要不同的温度。在工作程序的最后,通常将衬底冷却到衬底处理装置可以承受的水平。加热和冷却步骤可能占处理时间的很大一部分,并且可能限制反应器的生产量。稳态温度之间的时间基本上是应最小化以增加反应器的生产量的时间。
因此,可能需要以高功率和能控性来控制衬底温度。
发明内容
根据本发明的至少一个实施例,提供一种用于制造半导体装置的设备,其包括:
反应室,所述反应室具有用于保持衬底的衬底保持器;以及
用于加热所述衬底的加热器;其中所述加热器包括竖直腔表面发射激光器,所述竖直腔表面发射激光器被构造和布置成将辐射束发射到由所述衬底保持器保持的衬底。
竖直腔表面发射激光器(VCSEL)能够在辐射中产生足够的功率,以在衬底中提供陡峭的温度上升。竖直腔表面发射激光器由于其接通/断开时间短因此是具有很高能控性的半导体装置。由竖直腔表面发射激光器发射的辐射束显示出极小的发散角,因此VCSEL允许在VCSEL的某个距离处实现非常好的功率控制。
衬底保持器可以是用于以间隔开的关系保持多个半导体衬底的衬底架,所述衬底架包括至少一个支撑构件,所述至少一个支撑构件限定多个间隔开的衬底保持装置,所述衬底保持装置中的每一个被配置成以基本上水平的取向独立地保持衬底,并且竖直腔表面发射激光器被构造和布置成至少从衬底架的一侧向衬底架中的衬底发射辐射。加热器可以包括用于预加热衬底的预加热器和用于以最终温度加热衬底的最终加热器,并且用于将架从预加热器移动到最终加热器的架处理器以及向衬底架中的衬底发射辐射的竖直腔表面发射激光器设置到所述预加热器。
根据本发明的另一个实施例,提供一种用于生产半导体装置的方法,其包括:
提供衬底;以及
用竖直腔表面发射激光器加热所述衬底。
出于概述本发明和优于现有技术而实现的优势的目的,上文中描述了本发明的某些目标和优势。当然,应当理解,未必所有这些目的或优点都可以根据本发明的任何特定实施例来实现。因此,例如,所属领域的技术人员将认识到,本发明可以按实现或优化如本文中所教示或建议的一种优势或一组优势但不一定实现如本文中可能教示或建议的其它目的或优势的方式来实施或进行。
所有这些实施例都旨在落入本文中所公开的本发明的范围内。对于所属领域的技术人员来说,这些和其它实施例将从参考附图的某些实施例的以下详细描述变得显而易见,本发明不限于所公开的任何特定实施例。
附图说明
应了解,图中的元件仅为了简单和清晰起见而示,且不一定按比例绘制。例如,图中的一些元件的尺寸可能相对于其它元件夸大,以有助于改进对本公开所说明实施例的理解。
图1示意性地且部分露出地示出根据本发明的用于应用竖直腔表面发射激光器的设备的透视图;
图2示意性地示出根据图1的设备的平面图;
图3示出竖直腔表面发射激光器;
图4示出呈阵列的图3的多个竖直腔表面发射激光器;
图5描绘用于承载由图4的阵列加热的多个衬底的衬底架的侧视图。
图6描绘由图4的阵列加热的图5的衬底架的一部分;
图7描绘在图5的衬底架中加热的衬底的俯视图;
图8描绘使用VCSEL阵列时在设备中可能出现的过度加热问题;以及
图9描述图8的过度加热问题的解决方案。
具体实施方式
尽管下文公开了某些实施例和实例,但所属领域的技术人员将理解,本发明延伸超出了本发明具体公开的实施例和/或用途以及显而易见的修改和其等效物。因此,希望本发明所公开的范围不应受下文所描述特定公开实施例的限制。
用于加热衬底堆叠的VCSEL
根据本发明的包括竖直腔表面发射激光器VCSEL的设备1可如图1和2所示。所述设备1包括外壳2,且通常可以部分地或完全地安装在所谓的“洁净室”中。除了外壳2之外,还可以存在隔板3、4和5,特别是从图2中可以看出。外壳2与隔板3一起界定反应器区域21。衬底处理室22界定在外壳2与隔板3、4之间。盒处理室23界定在隔板4和5与外壳2之间。设备1还包括盒引入部分33。
在反应器区域21中布置具有加热器的两个反应器室,例如炉子6、7,但是也可以使用一个炉子。所述炉子竖直放置,并且以12表示的填有衬底13的衬底架可以从下方沿竖直方向引入到炉子6、7中。为此目的,每个炉子都具有包括插入臂14的架处理器,所述插入臂可借助于心轴38在竖直方向上移动。在图1的图中只能看到一个插入臂14。在图2中,示出了在设备的两侧上有两个插入臂14。衬底架12在底部设有绝缘塞,所述绝缘塞未详细示出,所述绝缘塞相对于炉子提供密封。
架处理器还包括布置在反应区域21中的具有切口15的旋转式平台11。所述切口15的形状可以使得如果切口15已达到正确的位置,则臂14能够上下移动通过所述切口。另一方面,衬底架的底部的直径可以使得所述直径大于平台11中的切口15,使得当臂14从图1所示的位置向下移动时,衬底架12可以放置在旋转式平台11上,并且可以在反向操作中再次从其中移除。
可以用架处理器将衬底架12馈送到炉子6和炉子7两者。有可能在其中进行连续的处理。还有可能允许平行的多组衬底架12仅由炉子6处理以及仅由炉子7处理。所述衬底架12可以具有衬底13。
衬底13可被供应在盒10中(传送盒),所述盒可从盒引入部分33借助于盒处理机器人35的臂31通过可闭合开口34放置在存储区8中。臂31可以具有支承表面32,所述支承表面的尺寸略小于旋转式平台27中的一系列切口26的尺寸。多个这种旋转式平台在存储区8中沿竖直方向一个接一个地设置。臂31可以借助于盒处理机器人35在竖直方向上移动。臂31安装成使得所述臂不仅能够将盒从引入部分33拾取到存储区8或将盒从存储区8移除到引入部分33,而且还使得能够将盒从存储区8移动到旋转式平台30或从旋转式平台30移动到存储区8。
所述旋转式平台30被构造成使得在旋转时将盒放置成抵靠隔板4,在所述隔板中已形成开口37,使得在打开盒之后,可借助于衬底处理器的臂24从相关的盒中一个接一个地取出衬底,并且可以将衬底放置在位于衬底处理室22中的衬底架12中。所述衬底架12由铰接臂16支撑,所述铰接臂是架处理器的部分并在端部处具有支承表面17,所述支承表面的尺寸略小于旋转式平台11的切口15的尺寸。所述臂16能够通过围绕旋转点18旋转而与衬底架一起移动通过隔板3中的可闭合开口。提供闭合件是为了能够闭合反应区域21与衬底处理室22之间的开口19。
操作员或自动化盒传送系统(未示出)可以通过在引入部分33上引入多个盒来装载存储区8。可以在面板36上完成控制操作。盒10可以借助于臂31从引入部分33转移到为存储区8中的这些盒制成的存储隔室9中。通过从用于通过开口34从部分33移除相关盒10的最低位置开始,所述盒可以向上移动,以用于由盒处理机器人35移动到存储区8的较高隔室9中。通过存储区8的旋转,有可能用盒10填充各个隔室9。
相关的盒10可以由臂31从存储区移除并放置在旋转式平台30上。盒在旋转式平台30上旋转,并被放置成使得其门抵靠隔板4。盒的门可以用开门器移除。借助于臂24,衬底可以被逐个衬底地移除并放置在衬底架12中,所述衬底架与衬底处理器一起放置在摆动臂16上。
与此同时,旋转式平台11可能够以关于将对存在于反应器区域21内部的衬底进行的处理的最佳方式在反应器区域21中移动。在衬底处理室22中已填充衬底架12并可以使衬底架12可用于反应器6、7中的一个反应器之后,打开到此时一直闭合的开口19,且可将所述新近填充的衬底架12放置在旋转式平台11上。然后,所述旋转式平台11可移动一个位置,且可借助于插入臂14将填充的衬底架12从平台11移除到炉子6、7中。可以在所述填充的平台11上降低成品架中的所处理的衬底。所述衬底执行与上述移动相反的移动以最终进入盒中。
可以在所述炉子中处理通过提供到每个炉子6、7的插入臂14将具有新衬底的衬底架12馈送到炉子6或炉子7。有可能在炉子6、7中进行连续的处理。处理可以包括升高衬底架12中的衬底的温度。特别是,如果处理需要相对高温度,则温度的升高可能需要较长时间。衬底温度可以从一种稳态变为另一种稳态的速率取决于反应器的上升速率。
设备可以具有预加热器,例如,竖直腔表面发射激光器39,用于利用朝向衬底13引导的激光束来加热架12中的衬底13以减少加热时间。借助插入臂14,可以将架12从下方沿竖直方向引入用作最终加热器的炉子6、7中,所述插入臂可借助于心轴38在竖直方向上移动。在此移动期间,衬底13可以沿着竖直腔表面发射激光器39移动。当衬底13在移动期间沿着竖直腔表面发射激光器39通过时,竖直腔表面发射激光器39可能够在激光束中产生足够的功率以在衬底13中提供温度上升。竖直腔表面发射激光器39可以被布置成阵列。
用作预加热器的竖直腔表面发射激光器39的阵列在竖直方向上的长度可以小于架12在竖直方向上的长度。甚至更优选的是,预加热器在竖直方向上的长度可以小于架12在竖直方向上的长度的2/3、一半、或甚至1/3。
在图1的图中仅可看到一个竖直腔表面发射激光器39。如图2所示,可以有两个竖直腔表面发射激光器39,每个竖直腔表面发射激光器与炉子6、7之一一起工作。另一选择为,两个或更多个竖直腔表面发射激光器可以位于单个炉子6、7的下方,以提高加热的均匀性。
衬底架12可以在底部设有绝缘塞,当架12在炉子6、7中向上移动时,所述绝缘塞相对于炉子6、7提供密封。为了提高由竖直腔表面发射激光器39进行的预加热的均匀性,绝缘塞可以具有架旋转装置,所述架旋转装置用于在通过竖直腔表面发射激光器39加热架12中的衬底13期间,使具有衬底13的架12绕竖轴旋转。架旋转装置可以从US9018567B2中获知,所述专利以引用的方式并入本文中。
图3示出用于图1和2的设备中的竖直腔表面发射激光器(VCSEL)39。竖直腔表面发射激光器39可以包括晶体衬底43、外延形成在所述衬底上的下部多层干涉镜45(例如,布拉格(brag)反射器)、包括外延形成在所述下部镜上的至少一个量子阱层并发射预定波长的激光的有源区47,以及外延形成在所述有源区上的上部多层干涉镜49(例如,布拉格反射器)。这些层沿竖直方向布置。
在所述有源区47与所述镜45、49中的对应镜之间并与其外延地插入下部和上部间隔区,以在所述镜的相对面之间提供与所述波长间隔开预定关系的光学距离的竖直光学腔。所述有源区47、所述上部间隔区和所述上部镜形成为竖直波导区,所述竖直波导区具有基本恒定的横截面积和低于所述上部镜49的第一有效介电常数。激光器还包括:介质,所述介质在横向上基本围绕所述波导区并且具有小于所述第一有效介电常数的第二介电常数。
提供两个电接触区,一个电接触区51电连接到所述有源区47上方的所述波导区,而另一个电接触区49电连接到所述有源区47下方的所述波导区。通过在所述镜45、49的相对面之间产生驻波,施加到所述接触区的电功率使所述激光以所述波长发射激光。
辐射束55逸出竖直腔表面发射激光器39,因为上部多层干涉镜49不是100%反射的。通过调节下部和上部镜45、49之间的距离,可以调节辐射束55的波长。
竖直腔表面发射激光器39可以发射波长在800nm与1100nm之间,优选地约808nm、850nm或980nm的红外辐射55。这些波长可以被辐射束55辐射的衬底最佳地吸收。竖直腔表面发射激光器39可以将衬底加热到50与1200℃之间、优选地100与900℃之间、并且更优选地150与600℃之间的温度。
图4示出呈VCSEL阵列57设置以沿衬底的方向发射辐射束55的多个竖直腔表面发射激光器39。在VCSEL阵列57中,可以利用功率控制器59个别地控制呈VCSEL阵列57的各个竖直腔表面发射激光器39的各个功率,以调节辐射束55的功率输出。竖直腔表面发射激光器结合了高能量密度和高能控性。能控性高是因为竖直腔表面发射激光器39提供了非常窄的定向辐射束55,并且竖直腔表面发射激光器39允许非常快速地切换具有窄光谱的辐射束55且允许调光。竖直腔表面发射激光器39是固态装置,因此具有非常长的寿命。用于沿衬底方向发射辐射的竖直腔表面发射激光器39的VCSEL阵列57可以具有10W/cm2至40kW/cm2之间、优选地100W/cm2至10kW/cm2之间、甚至更优选地约1kW/cm2的功率输出。
在高温膜沉积或退火工艺中,在将衬底引入反应室(例如,炉子6、7)后,必须将衬底加热到预定温度。在当前化学气相沉积反应器中,当将衬底装载到反应室中时,衬底通常可以处于室温,而反应室仍处于高得多的温度,可能高达900℃。
当将衬底装载在反应室中时,衬底经历热冲击。衬底所经历的热效应通常在衬底的整个范围内变化,也就是说,存在较大的热梯度,这可能很难缓解。这可能导致衬底翘曲和破裂,并且还导致差的均匀性和沉积膜质量。
可能需要在高温反应室中进行衬底交换,这能减少衬底所经历的热冲击而不会不利地影响工艺生产量,反而提高了生产量。竖直腔表面发射激光器可以被构造和布置成在衬底被加载到反应室中之前加热衬底。
竖直腔表面发射激光器可以被构造和布置成作为预加热器加热反应器区域21中的衬底。架处理器的插入臂14可以用于将具有衬底的架12从预加热器移动到最终加热器,例如在反应器中,例如炉子6、7,在其中可以将衬底加热至或控制在最终温度。
图5描绘用于以间隔开的关系保持多个衬底13的衬底架12。衬底架12包括至少一个支撑构件(例如,三个支柱61),所述支撑构件限定多个间隔开的衬底保持装置,所述衬底保持装置中的每一个被配置成以基本上水平的取向独立地保持衬底13。
用于沿衬底13的方向发射辐射束55的竖直腔表面发射激光器39的VCSEL阵列57可以位于架12的一侧。VCSEL阵列57可以从侧面向上朝向衬底13的底部辐射辐射束。辐射束55相对于垂直于衬底13的表面的线L的角度可介于60°到90°之间、优选地介于80°到89.5°之间且甚至更优选地介于85°与89°之间。
尽管竖直腔表面发射激光器39的辐射束55极为平行,但它们仍然可以用(非常)小角度发射。因此,辐射束55的方向被定义为由竖直腔表面发射激光器39发射的辐射的平均方向。
可以在衬底架的另一侧上施加反射器,以将衬底13反射的辐射反射回衬底架。反射器可以是回射器,用于沿与辐射束所来的方向相同的方向将辐射束反射回去。反射器可以具有偏振器以将反射光的偏振改变90度,从而改进反射光的吸收。偏振器可以是薄板,其厚度是波长的1/8。
图6描绘用于承载图5的多个衬底13的衬底架12的一部分。通过使VCSEL阵列57的辐射束55沿稍微偏轴的方向并向上发射到衬底13的表面,可以确保衬底13从底部向上加热,这可能会更好,因为敏感特征可能在衬底13的顶表面上。
图7描绘衬底架中的衬底13的俯视图。通过使VCSEL阵列57从侧面加热衬底13,仅直接加热衬底13的一部分59。通过使用旋转装置使衬底13沿箭头61所示的方向旋转,可以确保衬底13被均匀地加热。旋转装置中的旋转电动机可以用于使具有衬底13的架旋转并均匀地加热衬底13。
另一选择为,竖直腔表面发射激光器可以被构造和布置成在反应器(例如炉6、7)中加热衬底并用作最终加热器。因此,可能需要允许辐射束55透过反应器壁的反应器壁。为此,反应器壁可以由玻璃制成。
图8描绘在炉子中移动衬底架12之前使用VCSEL阵列57加热衬底13时在设备中可能出现的问题。VCSEL阵列57的辐射可能会过度加热衬底架的一部分12a。辐射可能会从加热的衬底架12散射到支撑构件的周围,从而加热设备的不希望被加热的部分,或者辐射可能通过所存在的架12的弯曲部分来聚焦。
为了部分地缓解这一问题,可以旋转衬底架12以实现更均匀的温度分布并避免过度加热。此外,可以使用可从控制系统获取的衬底架12的形状和架12的旋转位置的信息,以切断或限制将落到架12的前述部分12a(见图9)的VCSEL矩阵57的部分的功率。因此,衬底架12的部分12a可以接收到减少量的辐射,并且可能更少的辐射从加热的衬底架12散射到支撑构件的周围而加热设备的不希望被加热的部分。设备包括多个竖直腔表面发射激光器和个别地控制各个竖直腔表面发射激光器的功率的功率控制器,并且所述功率控制器可以被编程为沿着衬底架的宽度调节竖直腔表面发射激光器的辐射输出以避免过度加热衬底架。
用于加热单个衬底的VCSEL
用于发射辐射束55的竖直腔表面发射激光器39的VCSEL阵列57也可以用来在单个衬底反应室中加热个别衬底。例如,VCSEL阵列57可以用于单个衬底化学气相沉积(CVD)设备中。这种化学气相沉积设备可以包括:
反应室;
衬底保持器,例如,设置在所述室内的基座,用于将要处理的衬底支撑在顶表面上;
位于反应室的表面上的多个竖直腔表面发射激光器39,每个激光器被配置成利用辐射束55向基座的顶表面发射辐射能。竖直腔表面发射激光器39可以从衬底下方或可选地也从衬底上方加热衬底。设备可以具有控制器,所述控制器被配置成调节多个竖直腔表面发射激光器39中的至少一个相对于多个竖直腔表面发射激光器39中的另一个发射的辐射能以均匀地加热衬底。
反射器或辐射再分配器可以位于多个竖直腔表面发射激光器39与基座之间。反应室配置和控制器59的目的可以是提供一种环境,所述环境尽可能地为衬底和相关的基座提供均匀的辐射。当辐射均匀时,衬底-基座组合的温度的均匀程度将使热损失也是均匀的。反应器的表面可以在内部涂有反射材料,例如镀金。
反应室中的开口可以用于将反应气体引入反应室中。关于化学气相沉积反应室的细节可如第6,191,399号美国专利所公开,所述美国专利以引用的方式并入本文中。关于基座的细节可如2000年5月30日发布的第6,068,441号美国专利所公开,所述美国专利以引用的方式并入本文中。
反应室的功能可以是提供外延反应器。因为必须用沉积材料引入和去除气体,同时必须引入和移除衬底自身,所以反应器室可以具有用于实现相关功能的开口。在高温膜沉积或退火工艺中,在将衬底引入反应室后,必须将衬底加热到预定温度。
例如,在外延工艺中,温度通常可以为约1090℃至1190℃。可以通过与加热的基座直接接触进行传导,或通过使用加热灯(例如竖直腔表面发射激光器39)进行辐射,来实现衬底加热。
在当前化学气相沉积外延反应器中,当将衬底装载到反应室中时,衬底通常处于室温,而反应室仍处于高得多的温度,可能高达900℃。当衬底落到基座上时,衬底和基座都会经历热冲击。由于其质量远小于基座的质量,因此衬底的冲击更为明显。衬底所经历的热效应通常在衬底的整个范围内变化,也就是说,存在较大的热梯度,这可能很难缓解。这可能导致衬底翘曲和破裂,并且还导致差的均匀性和沉积膜质量。
基座也经历热冲击,这种冲击会在一个接一个的衬底之间反复发生,并且最终会缩短基座的工作寿命。通常,为了减少热冲击,通过冷却到比处理温度低得多的温度而使基座准备好容纳衬底。然后,一旦将衬底放置到位,必须先将基座重新加热至处理温度,然后才能进行处理。仅出于衬底转移的目的,这种重复的温度循环会降低设备中的衬底生产量。
显然需要一种在高温反应室中进行衬底交换的方法,所述方法可以减少衬底和基座两者所经历的热冲击而不会不利地影响工艺生产量,反而提高了生产量。因此,可能有利的是在设备中提供竖直腔表面发射激光器作为加热器和/或预加热器。
加热器可以包括用于预加热衬底的预加热器和用于以最终温度加热衬底的最终加热器。可以提供用于将衬底从预加热器移动到最终加热器的衬底处理器。竖直腔表面发射激光器可以被构造和布置成在将衬底转移到反应室之前或期间向预加热器中的衬底发射辐射以预加热衬底。由此可以减少衬底和基座两者所经历的热冲击而不会不利地影响工艺生产量,反而提高了生产量。
对于单衬底设备,较低温度的应用可能与较高温度的应用一样重要。在相对较高的温度下,传热比较容易,而在较低温度下,传热比较慢。因此,可以肯定的是,低温下进入的冷晶片的温度影响较小,但以绝对摄氏度为单位,则控制此较低温度可能会更加困难。
所示出和描述的特定实现方式是对本发明及其最佳模式的说明,而无意以任何方式限制各方面和实现方式的范围。事实上,为了简洁起见,系统的常规制造、连接、准备和其它功能方面可能未详细描述。此外,各图中所示的连接线旨在表示各种元件之间的示例性功能关系和/或物理联接。许多另选的或附加的功能关系或物理连接可能存在于实际的系统中,和/或在一些实施例中可能不存在。
应该理解,本文描述的配置和/或方法本质上是示例性的,并且这些具体实施例或实例不被认为是限制性的,因为许多变化是可能的。本文描述的具体例程或方法可以表示各种处理策略中的一个或多个。因此,所示的各种动作可以以所示的顺序执行、以其它顺序执行或者在一些情况下可以省略。
本公开的主题包含本文中所公开的各种过程、系统和配置及其它特征、功能、动作和/或特性以及其任何和所有等效物的所有新颖和非显而易见的组合和子组合。
Claims (25)
1.一种用于制造半导体装置的设备,其包括:
反应室,所述反应室具有用于保持衬底的衬底保持器;以及
用于加热所述衬底的加热器;其中所述加热器包括竖直腔表面发射激光器,所述竖直腔表面发射激光器被构造和布置成将辐射束发射到所述设备中的衬底。
2.根据权利要求1所述的设备,其中所述加热器包括多个竖直腔表面发射激光器,所述多个竖直腔表面发射激光器呈阵列提供以沿所述衬底的方向发射多个辐射束。
3.根据权利要求2所述的设备,其中所述设备包括功率控制器,所述功率控制器个别地控制所述阵列中的各个竖直腔表面发射激光器的功率以个别地控制每个辐射束的功率。
4.根据权利要求2所述的设备,其中所述竖直腔表面发射激光器的阵列被构造和布置成将所述衬底加热到50与1200℃之间的温度。
5.根据权利要求2所述的设备,其中用于沿所述衬底的方向发射辐射的所述竖直腔表面发射激光器的阵列具有10W/cm2至40kW/cm2之间的功率输出。
6.根据权利要求1所述的设备,其中所述竖直腔表面发射激光器发射波长在800nm与1100nm之间的红外辐射。
7.根据权利要求1所述的设备,其中所述衬底保持器是用于以间隔开的关系保持多个半导体衬底的衬底架,所述衬底架包括至少一个支撑构件,所述至少一个支撑构件限定多个间隔开的衬底保持装置,所述衬底保持装置中的每一个被配置成以基本上水平的取向独立地保持衬底,并且所述竖直腔表面发射激光器被构造和布置成至少从所述衬底架的一侧向所述衬底架中的所述衬底发射辐射。
8.根据权利要求7所述的设备,其中所述设备具有衬底架旋转装置,所述衬底架旋转装置被构造和布置成使所述衬底架旋转。
9.根据权利要求7所述的设备,其中所述竖直腔表面发射激光器被构造和布置成从所述衬底架的所述一侧向上朝向保持在所述衬底架中的所述衬底的底部发射所述辐射束,发射的角度相对于垂直于所述衬底的表面的线介于60°到90°之间。
10.根据权利要求7所述的设备,其中所述设备具有反射器,所述反射器被构造并布置在所述设备内,在所述衬底架的相对于所述竖直腔表面发射激光器的另一侧上,以将所述衬底反射的辐射反射回到所述衬底架。
11.根据权利要求10所述的设备,其中所述反射器包括回射器,用于沿与所述辐射束所来的方向相同的方向将所述辐射束反射回去。
12.根据权利要求7所述的设备,其中所述设备包括多个竖直腔表面发射激光器和功率控制器,所述功率控制器个别地控制所述各个竖直腔表面发射激光器的所述功率以调节所述竖直腔表面发射激光器沿着所述衬底架的辐射输出。
13.根据权利要求12所述的设备,其中所述功率控制器被编程为利用在所述衬底架的顶部和底部的所述竖直腔表面发射激光器提供更高的辐射输出。
14.根据权利要求7所述的设备,其中所述加热器包括用于预加热所述衬底的预加热器和用于以最终温度加热所述衬底的最终加热器,并且用于将所述架从所述预加热器移动到所述最终加热器的架处理器以及向所述衬底架中的所述衬底发射辐射的所述竖直腔表面发射激光器设置到所述预加热器。
15.根据权利要求14所述的设备,其中所述预加热器和所述最终加热器设置在反应区域中。
16.根据权利要求15所述的设备,其中所述预加热器被构造和布置在所述最终加热器下方,并且所述架处理器能够将所述架向上移动到所述最终加热器。
17.根据权利要求14所述的设备,其中所述架处理器和所述预加热器被构造和布置成在所述预加热器正加热所述架中的所述衬底的一部分时沿着所述预加热器移动所述架。
18.根据权利要求17所述的设备,其中所述预加热器在竖直方向上的长度小于所述架在竖直方向上的长度。
19.根据权利要求1所述的设备,其中所述加热器包括用于预加热所述衬底的预加热器和用于以最终温度加热所述衬底的最终加热器,并且用于将所述衬底从所述预加热器移动到所述最终加热器的衬底处理器以及向所述衬底发射辐射的所述竖直腔表面发射激光器设置在所述预加热器中。
20.根据权利要求19所述的设备,其中所述竖直腔表面发射激光器设置在衬底处理室中。
21.根据权利要求1所述的设备,其中所述竖直腔表面发射激光器被构造和布置成加热所述反应室中的衬底。
22.根据权利要求21所述的设备,其中所述反应室具有透射所述竖直腔表面发射激光器的所述辐射的室壁。
23.根据权利要求22所述的设备,其中所述室壁由透射所述竖直腔表面发射激光器的所述辐射的材料制成。
24.根据权利要求7所述的设备,其中所述设备包括多个竖直腔表面发射激光器和功率控制器,所述功率控制器个别地控制所述各个竖直腔表面发射激光器的所述功率以调节所述竖直腔表面发射激光器沿着所述衬底架的宽度的辐射输出。
25.一种用于生产半导体装置的方法,其包括:
提供衬底;以及
用竖直腔表面发射激光器加热所述衬底。
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US20180286711A1 (en) | 2018-10-04 |
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