JP7097383B2 - 半導体デバイスを製造するための装置および方法 - Google Patents
半導体デバイスを製造するための装置および方法 Download PDFInfo
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Description
基材を保持するための基材ホルダーを備える反応チャンバーと、
基材を加熱するヒーターと、を備える装置に関する。
基材を保持するための基材ホルダーを備える反応チャンバーと、
基材を加熱するためのヒーターであって、ヒーターは基材ホルダーによって保持される基材に放射ビームを放射するように構築および配置される垂直共振器面発光レーザーを備える、ヒーターと、を備える、半導体デバイスを製造する装置が提供される。
基材を供給する工程と、
基材を垂直共振器面発光レーザーで加熱することと、を含む。
基材のスタックを加熱するVCSEL
単一の基材を加熱するVCSEL
反応チャンバーと、
基材ホルダー、例えば、上面で処理される基材を支持するためにチャンバー内に配置されるサセプターと、
反応チャンバーの表面に配置される複数の垂直共振器面発光レーザー39であって、それぞれがサセプターの上面に向かって放射ビーム55で放射エネルギーを放射するように構成される、垂直共振器面発光レーザー、を備えることができる。垂直共振器面発光レーザー39は、基材の下から、または必要に応じて基材の上からも基材を加熱することができる。装置は、基材を均一に加熱するために、複数の垂直共振器面発光レーザー39のうちの少なくとも一つによって放出される放射エネルギーを、複数の垂直共振器面発光レーザー39のうちの別の一つに対して調整するように構成されるコントローラを有してもよい。
Claims (24)
- 半導体デバイスを製造する装置であって、
基材を保持するための基材ホルダーを備える反応チャンバーと、
前記基材を加熱するためのヒーターであって、前記ヒーターが前記装置内の基材に放射ビームを放射するように構築および配置される垂直共振器面発光レーザーを備える、ヒーターと、を備え、
前記基材ホルダーが、間隔を空けた状態で複数の半導体基材を保持するための基材ラックであり、前記基材ラックが複数の離間した基材保持支持部を画定する少なくとも一つの支持部材を備え、各基材保持支持部が、基材を実質的に水平方向に独立して保持するように構成され、前記垂直共振器面発光レーザーが、少なくとも前記基材ラックの側面から前記基材ラック内の前記基材に放射線を放射するように構築および配置される、装置。 - 前記ヒーターが、前記基材の方向に複数の放射ビームを放射するために、アレイ状に設けられる複数の垂直共振器面発光レーザーを備える、請求項1に記載の装置。
- 前記装置が、各放射ビームのパワーを個別に制御するために、前記アレイ内の個々の垂直共振器面発光レーザーのパワーを個別に制御するパワーコントローラーを備える、請求項2に記載の装置。
- 垂直共振器面発光レーザーの前記アレイが、前記基材を50~1200℃の温度に加熱するように構築および配置される、請求項2に記載の装置。
- 前記基材の方向に放射線を放射するための垂直共振器面発光レーザーの前記アレイが、10W/cm2~40kW/cm2のパワー出力を有する、請求項2に記載の装置。
- 前記垂直共振器面発光レーザーが、800nm~1100nmの波長を有する赤外線を放射する、請求項1に記載の装置。
- 前記装置が、前記基材ラックを回転させるように構築および配置される基材ラック回転装置を備える、請求項1に記載の装置。
- 前記垂直共振器面発光レーザーが、前記基材ラックの側面から前記基材ラックに保持される前記基材の底部に向かって、前記基材の表面に垂直な線に対して60~90°の角度で上向きに放射ビームを放射するように構築および配置される、請求項1に記載の装置。
- 前記装置が、前記基材からの反射された放射線を前記基材ラックに反射して戻すために、前記垂直共振器面発光レーザーに対して前記基材ラックの反対側の前記装置内に構築および配置される反射器を備える、請求項1に記載の装置。
- 前記反射器は前記放射ビームが来るのと同じ方向に前記放射ビームを反射して戻すためのレトロリフレクタを備える、請求項9に記載の装置。
- 複数の垂直共振器面発光レーザーと、前記個々の垂直共振器面発光レーザーのパワーを個別に制御するためのパワーコントローラーと、を備え、前記基材ラックに沿って前記垂直共振器面発光レーザーの放射出力を調整する、請求項1に記載の装置。
- 前記パワーコントローラーが、前記基材ラックの上部および下部にある前記垂直共振器面発光レーザーを用いて、より高い放射出力を供給するようにプログラムされる、請求項11に記載の装置。
- 前記ヒーターが、前記基材を予熱するためのプレヒーターと、前記基材を最終温度で加熱するための最終ヒーターと、前記ラックを前記プレヒーターから前記最終ヒーターへ移動させるためのラックハンドラーと、を備え、前記基材ラック内の前記基材に対して放射線を放射するための前記垂直共振器面発光レーザーが前記プレヒーターに設けられる、請求項1に記載の装置。
- 前記プレヒーターおよび前記最終ヒーターが反応領域に設けられる、請求項13に記載の装置。
- 前記プレヒーターが前記最終ヒーターの下に構築および配置され、前記ラックハンドラーが前記ラックを前記最終ヒーターまで上方に移動させることができる、請求項14に記載の装置。
- 前記ラックハンドラーおよび前記プレヒーターが、前記プレヒーターが前記ラック内の前記基材の一部を加熱している間に、前記プレヒーターに沿って前記ラックを移動させるように構築および配置される、請求項13に記載の装置。
- 前記プレヒーターが、前記ラックの垂直方向の長さよりも短い垂直方向の長さを有する、請求項16に記載の装置。
- 半導体デバイスを製造する装置であって、
基材を保持するための基材ホルダーを備える反応チャンバーと、
前記基材を加熱するためのヒーターであって、前記ヒーターが前記装置内の基材に放射ビームを放射するように構築および配置される垂直共振器面発光レーザーを備える、ヒーターと、を備え、
前記ヒーターが、前記基材を予熱するためのプレヒーターと、前記基材を最終温度で加熱するための最終ヒーターと、前記基材を前記プレヒーターから前記最終ヒーターへ移動させるための基材ハンドラーと、を備え、前記基材に放射線を放射する前記垂直共振器面発光レーザーが前記プレヒーターに設けられる、装置。 - 前記垂直共振器面発光レーザーが、基材ハンドリングチャンバーに設けられる、請求項18に記載の装置。
- 前記垂直共振器面発光レーザーが、前記反応チャンバー内の基材を加熱するように構築および配置される、請求項1に記載の装置。
- 前記反応チャンバーが、前記垂直共振器面発光レーザーの放射線を透過するチャンバー壁を備える、請求項20に記載の装置。
- 前記チャンバー壁が、前記垂直共振器面発光レーザーの前記放射線を透過する材料から作られる、請求項21に記載の装置。
- 前記装置が、複数の垂直共振器面発光レーザーと、前記個々の垂直共振器面発光レーザーのパワーを個別に制御するためのパワーコントローラーと、を備え、前記基材ラックの幅に沿って前記垂直共振器面発光レーザーの放射出力を調整する、請求項1に記載の装置。
- 半導体デバイスを製造する方法であって、
基材を供給することと、
前記基材を請求項1に記載の装置で加熱することと、を含む、方法。
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