TW201838113A - 用於製造半導體裝置之設備及方法 - Google Patents
用於製造半導體裝置之設備及方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/123—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/126—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of gases chemically reacting with the workpiece
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/34—Laser welding for purposes other than joining
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
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- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract
本發明係關於一種用於製造一半導體裝置之設備,其包含:一反應腔室,其包含用於固持一基板之一基板固持器;及一加熱器,其用於對該基板加熱。該加熱器可包含一垂直腔面發射雷射,該垂直腔面發射雷射經建構及配置以將一輻射光束發射至由該基板固持器固持之一基板,從而對該基板加熱。
Description
本發明大體上係關於製造半導體裝置之設備及方法。更特定而言,本發明係關於一種設備,其包含:一反應腔室,其設置有一基板固持器用於固持一基板;及一加熱器,其用於對該基板加熱。
充當反應器之高溫爐可用作反應腔室以在半導體基板上產生精細尺寸結構,諸如積體電路。諸如矽晶圓之若干基板可置放於諸如反應器內部之基板托架或晶舟的基板固持器上。或者,單一基板可置放於諸如反應器內部之基板晶座的基板固持器上。基板及固持器兩者可經加熱至所要溫度。在典型的基板處理步驟中,反應物氣體通過經加熱基板,從而在基板上沈積反應物材料或氣體反應物之薄層。
對基板進行的一系列此等處理步驟被稱作配方。若所沈積層具有與下伏矽基板相同之結晶結構,則其被稱作磊晶層。此有時亦被稱作單晶層,此係因為其僅具有一個晶體結構。經由後續沈積、摻雜、微影、蝕刻及其他製程,此等層被製成積體電路,從而取決於基板大小及電路複雜度而產生數十或數千或甚至數百萬積體裝置。
謹慎地控制各種製程參數以確保所得層之高品質。一個此關鍵參數係每一配方步驟期間之基板溫度。在CVD期間,例如沈積氣體在特定溫度窗 內反應且沈積於基板上。不同溫度亦導致不同沈積速率。因此,準確地控制基板溫度以使基板在處理開始之前達到所要溫度係重要的。
關鍵地影響處理反應器之產量的一個因素係基板溫度斜變速率。此溫度斜變在給定配方期間之若干點處可能係需要的。舉例而言,冷基板必須經加熱至適當的處理溫度。又,配方可能針對不同處理步驟需要不同溫度。在配方端,基板通常被冷卻至基板處置裝置可耐受之位準。加熱及冷卻步驟可占顯著百分比之處理時間且可限制反應器之產量。穩態溫度之間的時間本質上係應最少化以便增加反應器之產量的時間。
因此,可能需要藉由高功率及可控性來控制基板溫度。
根據本發明之至少一個具體例,提供一種用於製造一半導體裝置之設備,其包含:一反應腔室,其設置有一基板固持器用於固持一基板;及一加熱器,其用於對該基板加熱;其中該加熱器包含經建構及配置以將一輻射光束發射至由該基板固持器固持之一基板的一垂直腔面發射雷射。
垂直腔面發射雷射(VCSEL)能夠在輻射中產生足夠功率以在基板中提供溫度之陡斜變。垂直腔面發射雷射係因短的接通/切斷時間而具有極高可控性的半導體裝置。由垂直腔面發射雷射發射之輻射光束展示極小發散角使得VCSEL允許在VCSEL之某距離處的極好功率控制。
基板固持器可為用於以隔開關係固持複數個半導體基板之基板托架,該基板托架包含界定複數個隔開之基板固持供應件的至少一個支撐構件,該等基板固持供應件中之每一者經組態而以大體水平定向獨立地固持基板,且垂直腔面發射雷射經建構及配置以至少自基板托架之一側將輻射發射至基板托架中之基板。該加熱器可包含:一預加熱器,其用於對該等基板預加熱; 及一最終加熱器,其用以在一最終溫度下對該等基板加熱;以及一托架處置器,其用於將該托架自該預加熱器移動至該最終加熱器,且用以將輻射發射至該基板托架中之該等基板的該等垂直腔面發射雷射經提供至該預加熱器。
根據本發明之另一具體例,提供一種用於製造一半導體裝置之方法,其包含:提供一基板;及藉由一垂直腔面發射雷射對該基板加熱。
為概述本發明之目的及相較於先前技術所達成之優點,本發明之某些目的及優點已描述於以上本文中。當然,應明瞭無須所有該等目的或優點皆可根據本發明之任何特定具體例來達成。因此,舉例來說,熟悉技藝人士當認知本發明可以達成或最佳化本文所教示或提出之一個優點或一組優點而無須達成本文中可能教示或提出之其他目的或優點的方式來具體化或實施。
所有此等具體例意欲在本文所揭示之本發明之範疇內。此等及其他具體例將自以下參考附圖的某些具體例之詳細描述而對熟習此項技術者變得顯而易見,但本發明並不受限於所揭示之任何特定具體例。
1‧‧‧設備
2‧‧‧外殼
3‧‧‧隔板
4‧‧‧隔板
5‧‧‧隔板
6‧‧‧爐
7‧‧‧爐
8‧‧‧儲存區
9‧‧‧儲存隔間
10‧‧‧晶匣
11‧‧‧旋轉平台
12‧‧‧基板托架
12a‧‧‧部分
13‧‧‧基板
14‧‧‧插入臂
15‧‧‧切口
16‧‧‧鉸接臂/擺動臂
17‧‧‧支承表面
18‧‧‧旋轉點
19‧‧‧開口
21‧‧‧反應器區域
22‧‧‧基板處置腔室
23‧‧‧晶匣處置腔室
24‧‧‧臂
26‧‧‧切口
27‧‧‧旋轉平台
30‧‧‧旋轉平台
31‧‧‧臂
32‧‧‧支承表面
33‧‧‧晶匣引入部分
34‧‧‧可封閉開口
35‧‧‧晶匣搬運機器人
36‧‧‧面板
37‧‧‧開口
38‧‧‧軸
39‧‧‧垂直腔面發射雷射
43‧‧‧結晶基板
45‧‧‧下部多層干涉鏡面
47‧‧‧作用分區
49‧‧‧上部多層干涉鏡面
51‧‧‧電接觸區
53‧‧‧電接觸區
55‧‧‧輻射光束/紅外線輻射
57‧‧‧VCSEL陣列
59‧‧‧功率控制器/部分
61‧‧‧支柱/箭頭
L‧‧‧線
應瞭解,圖式中之構件係為簡單及清楚起見而展示且未必按比例繪製。舉例而言,可相對於其他構件將圖式中之一些構件之尺寸擴大以幫助改良對所說明之本發明之具體例的理解。
圖1圖解地且部分暴露地展示根據本發明之用於施加垂直腔面發射雷射的設備之透視圖;圖2圖解地展示根據圖1之設備的平面圖;圖3展示垂直腔面發射雷射;圖4以陣列展示圖3之多個垂直腔面發射雷射; 圖5描繪用於載運由圖4之陣列加熱之多個基板的基板托架之側視圖;圖6描繪正由圖4之陣列加熱的圖5之基板托架之一部分;圖7描繪關於正在圖5之基板托架中加熱的基板之俯視圖;圖8描繪在使用VCSEL陣列之設備中可能出現的過度加熱問題;及,圖9描繪圖8之過度加熱問題的解決方案。
儘管在下文中揭示特定具體例及實施例,但彼等熟習此項技術者應理解,本發明延伸超出本發明所具體揭示之具體例及/或用途及其明顯修改及等效物。因此,希望所揭示之本發明之範疇不應受下文所描述之具體揭示之具體例限制。
根據本發明之包含垂直腔面發射雷射VCSEL的設備1可指示於圖1及圖2中。該設備1包含外殼2且可大體上部分或完全地裝設於所謂的「無塵室」中。除外殼2外,亦可存在隔板3、4及5,如特定地自圖2可見。外殼2與隔板3一起限定反應器區域21。基板處置腔室22限定於外殼2與隔板3、4之間。晶匣處置腔室23限定於隔板4及5與外殼2之間。設備1進一步包含晶匣引入部分33。
例如爐6、7之兩個反應器腔室設置有配置於反應器區域21中之加熱器,然而亦可使用單一爐。該等爐經垂直定位,且由12指示之填充有基板13的基板托架可自下方在垂直方向引入至爐6、7中。為此目的,每一爐具有托架處置器,該托架處置器包含可憑藉軸38在垂直方向移動的插入臂14。僅一個插入臂14可見於圖1之圖式中。在圖2中,指示在設備之兩側上存在兩個插入臂14。 基板托架12係設置於具有未更詳細指示之絕緣插塞的底部,該絕緣插塞提供相對於爐之密封。
托架處置器進一步包含配置於反應區域21中之旋轉平台11,其設置有切口15。該等切口15經塑形使得若切口15已到達正確位置,則臂14能夠向上及向下移動穿過切口。另一方面,基板托架之底部之直徑使得該直徑大於平台11中之切口15,使得當臂14自圖1中所展示之位置向下移動時,基板托架12可置放於旋轉平台11上且可在反向操作中再次自其移除。
基板托架12可藉由托架處置器饋送至爐6及爐7兩者。有可能在該等爐中執行連續處理。亦有可能允許藉由爐6排他地及藉由爐7排他地處理基板托架12之並行群組。該等基板托架12可設置有基板13。
基板13可供應於(輸送)晶匣10中,該晶匣可憑藉晶匣搬運機器人35之臂31自晶匣引入部分33穿過可封閉開口34置放於儲存區8中。臂31可設置有支承表面32,該表面之尺寸稍小於旋轉平台27中之一系列切口26的彼等尺寸。數個此類旋轉平台在垂直方向以一個在另一個上方之方式設置於儲存區8中。臂31可憑藉晶匣搬運機器人35在垂直方向移動。臂31經安裝使得該臂不僅能夠將晶匣自引入部分33拾取或移除至儲存區8或將晶匣自儲存區拾取或移除至引入部分,而且使得有可能將晶匣自儲存區8移動至旋轉平台30或將晶匣自旋轉平台移動至儲存區。
該旋轉平台30經建構使得在旋轉後,晶匣置放成與已形成有開口37之隔板4相抵,使得在開放晶匣之後,可憑藉基板處置器之臂24自所關注晶匣逐個地獲取基板且可將其置放於位於基板處置腔室22中之基板托架12中。該基板托架12藉由係托架處置器之部分且在末端處具有支承表面17的鉸接臂16支撐,該表面之尺寸稍小於旋轉平台11之切口15的彼等尺寸。該臂16能夠藉由對旋轉點18作旋轉來將基板托架移動穿過隔板3中之可封閉開口。封閉件經設置以 便能夠封閉反應區域21與基板處置腔室22之間的開口19。
操作者或自動晶匣輸送系統(未圖示)可藉由引入在引入部分33上之數個晶匣來裝載儲存區8。控制操作可在面板36上進行。晶匣10可憑藉臂31自引入部分33轉移至儲存區8中之針對此等晶匣而形成的儲存隔間9中。藉由自用於穿過開口34自部分33移除相關晶匣10之最低位置開始,該晶匣可藉由晶匣搬運機器人35向上移動以用於移動至儲存區8之較高隔間9中。藉由旋轉儲存區8,有可能用晶匣10填充各種隔間9。
所關注晶匣10可藉由臂31自儲存區移除且置放於旋轉平台30上。晶匣在旋轉平台30上旋轉且置放成其門與隔板4相抵。該晶匣之門可藉由開門器移除。憑藉臂24,基板可按逐基板之方式移除且藉由基板處置器置放於基板托架12中,該基板托架置放於擺動臂16上。
在此期間,旋轉平台11可能夠在反應器區域21中以關於待對存在於反應器區域21內部之基板進行之處理最佳的方式移動。在基板托架12已填入基板處置腔室22中且可變得可用於反應器6、7中之一者之後,直至此時仍封閉之開口19被開放且該新經近填充之基板托架12可置放於旋轉平台11上。該旋轉平台11可接著移動一個位置,且經填充基板托架12可藉助於插入臂14自平台11移除至爐6、7中。成品托架中之已處理基板可在該經填充平台11上下降。該等基板執行與以上相反之移動以結束於晶匣中。
具有藉由為每一爐6、7設置之插入臂14饋送至爐6或爐7之新近基板的基板托架12可在該爐中被處理。有可能在爐6、7中執行連續處理。該處理可包含升高托架12中之基板的溫度。尤其若處理需要相對較高溫度,則此溫度升高可能需要長時間。基板溫度可自一個穩態改變至另一穩態之速率取決於反應器之緩變率。
設備可具有例如垂直腔面發射雷射39之預加熱器,該垂直腔面發 射雷射用於藉由導向基板13之雷射光束對托架12中之基板13加熱以減少加熱時間。托架12可憑藉插入臂14自下方在垂直方向引入至充當最終加熱器之爐6、7中,該插入臂可憑藉軸38在垂直方向移動。在此移動期間,基板13可沿垂直腔面發射雷射39移動。垂直腔面發射雷射39可能夠在雷射光束中產生足夠功率以當基板13在移動期間沿垂直腔面發射雷射39通過時在基板13中提供溫度斜變。垂直腔面發射雷射39可按陣列配置。
充當預加熱器之垂直腔面發射雷射39的陣列在垂直方向之長度可小於托架12在垂直方向之長度。甚至更佳地,預加熱器在垂直方向之長度可小於托架12在垂直方向之長度的2/3、一半或甚至1/3。
僅一個垂直腔面發射雷射39可見於圖1之圖式中。如圖2中所展示,可存在兩個垂直腔面發射雷射39,其各自用於與爐6、7中之一者一起工作。或者,兩個或多於兩個垂直腔面發射雷射可定位於單一爐6、7下方以提高加熱均勻性。
基板托架12可設置於具有絕緣插塞之底部處,該絕緣插塞在托架12於爐6、7中向上移動提供相對於爐6、7之密封。為提高藉由垂直腔面發射雷射39進行之預加熱的均勻性,絕緣插塞可設置有托架旋轉裝置,該托架旋轉裝置用於在托架12中之基板13藉由垂直腔面發射雷射39加熱期間使具有基板13之托架12對垂直軸線作旋轉。托架旋轉裝置可自以引用方式併入本文中的US9018567B2已知。
圖3展示供用於圖1及圖2之設備中的垂直腔面發射雷射(VCSEL)39。垂直腔面發射雷射39可包含:結晶基板43;下部多層干涉鏡面45(例如,布拉格(brag)反射器),其磊晶形成於該基板上;作用分區47,其包含磊晶形成於該下部鏡面上之至少一個量子井層且發出預定波長之雷射;及上部多層干涉鏡面49(例如,布拉格反射器),其磊晶形成於該作用分區上。該等層係在垂直方 向配置。
下部及上部間隔區係插入於該作用分區47與該等鏡面45、49中之各別者之間且與其磊晶以在該等鏡面之相對面之間設置垂直光學空腔,該等相對面分離與該波長成預定關係之光學距離。該作用分區47、該上部間隔區及該上部鏡面形成為在該上部鏡面49下方之垂直波導區,其具有大體上恆定之橫截面積以及第一有效介電常數。該雷射進一步包含:介質,其在側向上大體包圍該波導區且具有小於該第一有效介電常數之第二介電質常數。
設置兩個電接觸區,一個電接觸區51電連接至該作用分區47上方之該波導區,且另一電接觸區53電連接至該作用分區47下方之該波導區。施加至該等接觸區之電功率使該雷射藉由在該等鏡面45、49之相對面之間產生駐波來發出該波長下之雷射。
因為上部多層干涉鏡面49並非100%反射的,所以輻射光束55係逸出式垂直腔面發射雷射39。藉由調節下部鏡面45與上部鏡面49之間的距離,輻射光束55之波長可經調節。
垂直腔面發射雷射39可發射波長在800nm與1100nm之間,較佳大約808nm、850nm或980nm的紅外線輻射55。此等波長可最佳地由被輻射光束55照射之基板吸收。垂直腔面發射雷射39可將基板加熱至在50℃與1200℃之間,較佳在100℃與900℃之間且更佳在150℃與600℃之間的溫度。
圖4展示按VCSEL陣列57設置以在基板之方向發射輻射光束55的多個垂直腔面發射雷射39。在VCSEL陣列57中,VCSEL陣列57中之個別垂直腔面發射雷射39的個別功率可藉由功率控制器59個別地控制以調整輻射光束55之功率輸出。垂直腔面發射雷射組合高能量密度與高可控性。因為垂直腔面發射雷射39提供極窄的定向輻射光束55且垂直腔面發射雷射39允許極快速地切換具有窄頻譜之輻射光束55並允許調光,所以可控性係高的。垂直腔面發射雷射 39係固態裝置且因此具有極長壽命。用於在基板之方向發射輻射的垂直腔面發射雷射39之VCSEL陣列57可具有在10W/cm2至40kW/cm2之間,較佳在100W/cm2至10kW/cm2之間且甚至更佳大約1kW/cm2的功率輸出。
在高溫薄膜沈積或退火製程中,基板必須在其被引入至例如爐6、7之反應腔室中之後經加熱至預定溫度。在當前化學氣相沈積反應器中,基板在被裝載至反應腔室中時可能通常在室溫下,該反應腔室仍處於可能高達900℃之高得多的溫度下。
當基板被裝載於反應腔室中時,基板經受熱衝擊。由基板經受之熱效應通常在整個基板範圍上變化,亦即,存在可能難以緩解之大的熱梯度。此可導致基板翹曲及斷裂且亦可導致所沈積薄膜之不良均勻性及品質。
可能需要高溫反應腔室中之基板交換,其減少由基板經受之熱衝擊而不會不利地影響製程產量,而替代地增強產量。垂直腔面發射雷射可經建構及配置以在基板被裝載於反應腔室中之前對基板加熱。
垂直腔面發射雷射可經建構及配置以作為預加熱器來對反應器區域21中之基板加熱。托架處置器之插入臂14可用以將具有基板之托架12自預加熱器移動至例如反應器(例如,爐6、7)中之最終加熱器,在該最終加熱器處,基板可經加熱至或控制在最終溫度。
圖5描繪用於以隔開關係固持複數個基板13之基板托架12。基板托架12包含界定複數個隔開之基板固持供應件的至少一個支撐構件(例如,三個支柱61),該等基板固持供應件中之每一者經組態以在大體水平定向上獨立地固持基板13。
用於在基板13之方向發射輻射光束55的垂直腔面發射雷射39之VCSEL陣列57可定位於托架12之一側。VCSEL陣列57可自該側向上朝向基板13之底部輻射輻射光束。輻射光束55相對於垂直於基板13之表面之線L的角度可在 60°與90°之間,較佳在80°與89.5°之間,且甚至更佳在85°與89°之間。
儘管垂直腔面發射雷射39之輻射光束55極平行,但其可仍以(極)小角度發射。輻射光束55之方向因此界定為由垂直腔面發射雷射39發射之輻射的平均方向。
反射器可應用於基板托架之另一側以將自基板13反射之輻射反射回至基板托架。反射器可係回反射器以在與輻射光束來自之方向相同的方向將輻射光束反射回。反射器可設置有偏光片以將反射光之偏振改變90度以改良對反射光之吸收。偏光片可係厚度為波長之1/8的薄板。
圖6描繪用於載運圖5之多個基板13的基板托架12之一部分。藉由使VCSEL陣列57之輻射光束55在稍微離軸且向上之方向發射至基板13之表面,保證基板13自底部向上經加熱,因為敏感特徵可在基板13之頂表面上,所以此加熱可係較好的。
圖7描繪關於基板托架中之基板13的俯視圖。藉由使VCSEL陣列57自側面對基板13加熱,基板13之僅一部分59經直接加熱。藉由用旋轉裝置使基板13在如由箭頭61描繪之方向旋轉,保證基板13經均勻加熱。旋轉裝置中之旋轉馬達可用以旋轉具有基板13之托架且對基板13均勻地加熱。
或者,垂直腔面發射雷射可經建構及配置以對例如爐6、7之反應器中的基板加熱且充當最終加熱器。允許輻射光束55透射穿過反應器壁之反應器壁可因此係必要的。出於此目的,反應器壁可由玻璃製成。
圖8描繪在使用VCSEL陣列57在將基板托架12移入爐中之前對基板13加熱的設備中可能出現的問題。VCSEL陣列57之輻射可對基板托架之部分12a過度加熱。輻射可自經加熱基板托架12經由支撐構件之環境散射以對設備之並不欲被加熱的部分加熱,或輻射可藉由托架12之所存在的彎曲部分集中。
為部分地緩解此問題,基板托架12可旋轉以達成較均勻溫度分佈 且避開過度加熱。另外,獲自控制系統的基板托架12之形狀及托架12之旋轉位置的資訊可用以切斷或限制將射中托架12之前述部分12a(參見圖9)的VCSEL矩陣57之部分的功率。減少量的輻射可因此由基板托架12之部分12a收容,且較少輻射可自經加熱基板托架12經由支撐構件之環境散射以對設備之並不欲被加熱的部分加熱。該設備包含多個垂直腔面發射雷射及用以個別地控制個別垂直腔面發射雷射之功率的功率控制器,且該功率控制器可經程式化以調整沿基板托架之寬度的垂直腔面發射雷射之輻射輸出,從而避免對基板托架之過度加熱。
用於發射輻射光束55之垂直腔面發射雷射39的VCSEL陣列57亦可用以對單一基板反應腔室中之個別基板加熱。舉例而言,VCSEL陣列57可用於單一基板化學氣相沈積(CVD)設備中。此化學氣相沈積設備可包含:一反應腔室;一基板固持器,例如安置於該腔室內以用於在頂表面上支撐待處理之基板的晶座;位於反應腔室之表面上的複數個垂直腔面發射雷射39,其各自經組態以藉由輻射光束55朝向晶座之頂表面發射放射能量。垂直腔面發射雷射39可自基板之下或視情況亦自基板上方對基板加熱。該設備可具有控制器,該控制器經組態以相對於複數個垂直腔面發射雷射39中之另一者調整由複數個垂直腔面發射雷射39中之至少一者發射的放射能量,以便對基板均勻地加熱。
反射器或輻射重分佈器可位於複數個垂直腔面發射雷射39與晶座之間。反應腔室組態及控制器59之目的可係提供儘可能為基板及相關聯晶座提供均勻輻射之環境。當輻射均勻時,基板-晶座組合之溫度將均勻至熱損失亦均勻之程度。反應器之表面可在內部塗佈有反射材料,諸如鍍金。
反應腔室中之開口可用於將反應氣體引入反應腔室中。關於化學氣相沈積反應腔室之細節可揭示於美國專利第6,191,399號中,該專利以引用的方式併入本文中。關於晶座之細節可見於美國專利第6,068,441號中,其在2000年5月30日發佈,該專利以引用之方式包括於本文中。
反應腔室之功能可係提供磊晶反應器。因為引入及移除具有沈積材料之氣體的必要性以及引入及移除基板自身之必要性,反應器腔室可具有用於實現相關聯功能之開口。在高溫薄膜沈積或退火製程中,基板必須在其被引入至反應腔室中之後經加熱至預定溫度。
舉例而言,在磊晶製程中,溫度可通常係大約1090℃至1190℃。此基板加熱可藉由經由與經加熱晶座之直接接觸的傳導或藉由經由使用例如垂直腔面發射雷射39之加熱燈的輻射來實現。
在當前化學氣相沈積磊晶反應器中,基板在被裝載至反應腔室中時通常在室溫下,該反應腔室仍處於可能高達900℃之高得多的溫度下。當基板降落至晶座上時,基板及晶座兩者經受熱衝擊。由於基板之質量遠小於晶座之質量,因此基板之衝擊更顯著。由基板經受之熱效應通常在整個基板範圍上變化,亦即,存在可能難以緩解之大的熱梯度。此可導致基板翹曲及斷裂且亦可導致所沈積薄膜之不良均勻性及品質。
晶座亦經受一個基板接著一個基板重複之熱衝擊,且可最終減少晶座之工作壽命。通常,晶座藉由冷卻至遠小於製程溫度之溫度以便減少熱衝擊來製備以收容基板。接著,一旦基板處於適當位置中,晶座便必須在處理可繼續進行之前經重新加熱至製程溫度。僅出於基板轉移的目的,此重複溫度循環減少設備中之基板產量。
明確需要高溫反應腔室中之基板交換的方法,其減少由基板及晶座兩者經受之熱衝擊而不會不利地影響製程產量,而替代地增強產量。因此, 可有利地在設備中設置垂直腔面發射雷射作為加熱器及/或預加熱器。
加熱器可包含用於對基板預加熱之預加熱器及用以在最終溫度下對基板加熱之最終加熱器。用於將基板自預加熱器移動至最終加熱器之基板處置器可經設置。垂直腔面發射雷射可經建構及配置以在將基板轉移至反應腔室之前或期間將輻射發射至預加熱器中之基板,從而對基板預加熱。由基板及晶座兩者經受之熱衝擊可藉此減少而不會不利地影響製程產量,而替代地增強產量。
對於單基板設備,低溫應用可與相對較高溫度應用一樣相關。在相對較高溫度下,熱傳遞較容易,且在低溫下,熱傳遞較慢。因此,可能事實上冷晶圓在低溫下產生之溫度效應係小的,但在絕對攝氏度下,可能更難以控制此低溫。
所展示且描述之特定實施方案係對本發明及其最佳模式之說明且並不意欲以任何方式另外限制態樣及實施之範圍。實際上,出於簡潔起見,系統之習知製造、連接、製備及其他功能性態樣可不加以詳細描述。此外,各種圖中展示之連接線意欲表示各種構件之間的例示性功能性關係及/或物理耦合。許多替代或附加功能關係或實體連接可存在於實際系統中,及/或在一些具體例中可不存在。
應理解,本文中所述之組態及/或方法本質上為例示性的,且此等特定具體例或實施例不視為具有限制意義,原因在於可能存在諸多變化。本文所述之特定程序或方法可表示任何數目的處理策略中之一或多者。因此,所說明之各種動作可以所說明之順序、以其他順序進行,或在一些情況下被省去。
本發明之主題包括各種製程、系統及組態,及本文中所揭示之其他特徵、動作、作用及/或特性,以及其任何及所有等效者的所有新穎的且非顯而易見的組合及子組合。
Claims (25)
- 一種用於製造一半導體裝置之設備,其包含:一反應腔室,其設置有一基板固持器用於固持一基板;及一加熱器,其用於對該基板加熱;其中該加熱器包含經建構及配置以將一輻射光束發射至該設備中之一基板的一垂直腔面發射雷射。
- 如請求項1之設備,其中,該加熱器包含以一陣列設置之多個垂直腔面發射雷射,從而在該基板之方向發射多個輻射光束。
- 如請求項2之設備,其中,該設備包含一功率控制器,用以個別地控制該陣列中之該等個別垂直腔面發射雷射之功率以個別地控制每一輻射光束之功率。
- 如請求項2之設備,其中,該陣列之垂直腔面發射雷射經建構及配置以將該等基板加熱至在50℃與1200℃之間的溫度。
- 如請求項2之設備,其中,用於在該基板之該方向發射輻射的垂直腔面發射雷射之該陣列具有在10W/cm 2至40kW/cm 2之間的功率輸出。
- 如請求項1之設備,其中,該垂直腔面發射雷射發射具有在800nm與1100nm之間波長的紅外線輻射。
- 如請求項1之設備,其中,該基板固持器係用於以隔開關係固持複數個半導體基板之一基板托架,該基板托架包含界定複數個隔開之基板固持供應件的至少一個支撐構件,該等基板固持供應件中之每一者經組態而以一大體水平定向獨立地固持一基板,且該垂直腔面發射雷射經建構及配置以至少自該基板托架之一側將輻射發射至該基板托架中之該等基板。
- 如請求項7之設備,其中,該設備設置有經建構及配置以旋轉該基板托架之一基板托架旋轉裝置。
- 如請求項7之設備,其中,該垂直腔面發射雷射經建構及配置以 自該基板托架之該側向上朝向固持於該基板托架中之該等基板的一底部在相對垂直於該基板表面之一線成60°至90°之間的角度下發射該輻射光束。
- 如請求項7之設備,其中,該設備設置有反射器,該等反射器在該設備內相對於該垂直腔面發射雷射建構及配置於該基板托架之另一側上以將自該等基板反射之輻射反射回至該基板托架。
- 如請求項10之設備,其中,該等反射器包含回反射器以在與該輻射光束來自之方向於相同的方向將該輻射光束反射回。
- 如請求項7之設備,其中,該設備包含多個垂直腔面發射雷射及用以個別地控制該等個別垂直腔面發射雷射之功率的一功率控制器,從而調整沿該基板托架之該等垂直腔面發射雷射之一輻射輸出。
- 如請求項12之設備,其中,該功率控制器經程式化以藉由該等垂直腔面發射雷射在該基板托架之頂部及底部處提供一較高輻射輸出。
- 如請求項7之設備,其中,該加熱器包含:一預加熱器,其用於對該等基板預加熱;及一最終加熱器,其用以在一最終溫度下對該等基板加熱;以及一托架處置器,其用於將該托架自該預加熱器移動至該最終加熱器,且用以將輻射發射至該基板托架中之該等基板的該等垂直腔面發射雷射經提供至該預加熱器。
- 如請求項14之設備,其中,該預加熱器及該最終加熱器係設置於反應區域中。
- 如請求項15之設備,其中,該預加熱器係建構及配置於該最終加熱器下方且該托架處置器可將該托架向上移動至該最終加熱器。
- 如請求項14之設備,其中,該托架處置器及該預加熱器經建構及配置以在該預加熱器正對該托架中之該等基板的一部分加熱的同時沿該預加熱器移動該托架。
- 如請求項17之設備,其中,該預加熱器在垂直方向之長度小於該托架在該垂直方向之長度。
- 如請求項1之設備,其中,該加熱器包含:一預加熱器,其用以對該基板預加熱;及一最終加熱器,其用以在一最終溫度下對該基板加熱;以及一基板處置器,其用於將該基板自該預加熱器移動至該最終加熱器,且用以將輻射發射至該基板之該等垂直腔面發射雷射係設置於該預加熱器中。
- 如請求項19之設備,其中,該垂直腔面發射雷射係設置於一基板處置腔室中。
- 如請求項1之設備,其中,該垂直腔面發射雷射經建構及配置以對該反應腔室中之一基板加熱。
- 如請求項21之設備,其中,該反應腔室設置有對於該垂直腔面發射雷射之該輻射透射的一腔室壁。
- 如請求項22之設備,其中,該腔室壁係由對該垂直腔面發射雷射之該輻射透射的一材料製成。
- 如請求項7之設備,其中,該設備包含多個垂直腔面發射雷射及用以個別地控制該等個別垂直腔面發射雷射之功率的一功率控制器,從而調整沿該基板托架之寬度的該等垂直腔面發射雷射之一輻射輸出。
- 一種用於製造一半導體裝置之方法,其包含:提供一基板;及藉由一垂直腔面發射雷射對該基板加熱。
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TWI762585B (zh) | 2022-05-01 |
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WO2018178771A1 (en) | 2018-10-04 |
CN110494968B (zh) | 2023-08-11 |
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