WO2022054750A1 - 基板処理装置、半導体装置の製造方法およびプログラム - Google Patents
基板処理装置、半導体装置の製造方法およびプログラム Download PDFInfo
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- WO2022054750A1 WO2022054750A1 PCT/JP2021/032613 JP2021032613W WO2022054750A1 WO 2022054750 A1 WO2022054750 A1 WO 2022054750A1 JP 2021032613 W JP2021032613 W JP 2021032613W WO 2022054750 A1 WO2022054750 A1 WO 2022054750A1
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/70—Feed lines
- H05B6/707—Feed lines using waveguides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/76—Prevention of microwave leakage, e.g. door sealings
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/02592—Microstructure amorphous
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2206/00—Aspects relating to heating by electric, magnetic, or electromagnetic fields covered by group H05B6/00
- H05B2206/04—Heating using microwaves
- H05B2206/044—Microwave heating devices provided with two or more magnetrons or microwave sources of other kind
Definitions
- This disclosure relates to a manufacturing method and a program of a substrate processing device and a semiconductor device.
- the substrate in the processing chamber is heated by using a heating device to change the composition and crystal structure in the thin film formed on the surface of the substrate.
- a modification treatment typified by an annealing treatment for repairing crystal defects and the like in a filmed thin film.
- semiconductor devices have become remarkably miniaturized and highly integrated, and along with this, there is a demand for modification treatment into a high-density substrate on which a pattern having a high aspect ratio is formed.
- a heat treatment method using electromagnetic waves as seen in Patent Document 1 for example, has been studied.
- the heat treatment may cause the substrate to warp or crack due to non-uniformity of the in-plane temperature of the semiconductor substrate.
- the purpose of the present disclosure is to provide a technique capable of preventing warping or cracking of a substrate due to heat treatment.
- a processing chamber for processing a substrate, a microwave oscillator for supplying microwaves to the processing chamber, and microwaves are maintained at a first microwave output.
- the heat treatment in which the supply time for supplying the microwave and the stop time for stopping the microwave shorter than the supply time are repeatedly supplied to the substrate for a predetermined number of times or a predetermined time to heat the substrate, and the microwave is applied to the first micro.
- a control unit configured to be able to control the microwave oscillator to perform a reforming process that supplies and reforms the substrate for a predetermined time while maintaining a second microwave output higher than the wave output.
- a processing chamber for processing a substrate a microwave oscillator for supplying microwaves to the processing chamber, a supply time for supplying microwaves while maintaining the microwave at the first microwave output, and supply are provided.
- a heat treatment in which microwaves are stopped for less than a certain period of time, and the microwaves are repeatedly supplied to the substrate for a predetermined number of times or for a predetermined time to heat the substrate, and the microwaves are maintained at a second microwave output higher than the first microwave output.
- a substrate processing apparatus including a control unit capable of controlling a microwave oscillator so as to supply the substrate for a predetermined time for reforming and reforming the substrate, and a method for manufacturing a semiconductor apparatus using the same. And an embodiment of the program.
- the substrate processing device in the present embodiment is configured as a single-wafer heat treatment device that performs various heat treatments on one or a plurality of wafers, and is subjected to annealing treatment using electromagnetic waves, which will be described later.
- the description will be given as an apparatus for performing the reforming process).
- a FOUP Front Opening Unified Pod: hereinafter referred to as a pod
- a storage container carrier
- the pod is also used as a transport container for transporting the wafer between various substrate processing devices.
- the substrate processing apparatus 100 is provided with a transport housing 202 having a transport chamber 203 inside for transporting the wafer 200 and a side wall of the transport housing 202 to provide the wafer 200. It is provided with cases 102-1 and 102-2 as processing containers described later, which have processing chambers 211-1 and 201-2 for processing, respectively. Further, a cooling case 109 forming the cooling chamber 204 is provided between the processing chambers 201-1 and 201-2.
- the lid of the pod 110 is opened and closed on the right side of FIG. 2 (lower side of FIG. 3), which is the front side of the transport housing 202, and the pod is opened and closed for loading and unloading the wafer 200 into and out of the transport chamber 203.
- a load port unit (LP) 106 as a mechanism is arranged.
- the load port unit 106 includes a housing 106a, a stage 106b, and an opener 106c.
- the stage 106b mounts a pod 110 and pods at a substrate loading / unloading outlet 134 formed in front of the housing of the transport chamber 203.
- the opener 106c opens and closes a lid (not shown) provided on the pod 110, which is configured to bring the 110 close to each other.
- the load port unit 106 may have a function capable of purging the inside of the pod 110 with a purge gas such as N2 gas.
- the transport housing 202 has a purge gas circulation structure, which will be described later, for circulating purge gas such as N2 in the transport chamber 203.
- the gate valves (GV) 205-1 and 205-2 that open and close the processing chambers 201-1 and 201-2 are located.
- a substrate transfer robot which is a substrate transfer mechanism for transferring the wafer 200
- a transfer machine 125 as a substrate transfer unit are installed in the transfer chamber 203.
- the transfer machine 125 can rotate or linearly move the tweezers (arms) 125a-1 and 125a-2 and the tweezers 125a-1 and 125a-2 as mounting portions for mounting the wafer 200 in the horizontal direction, respectively.
- Tweezers 125a-1 is an ordinary aluminum material and is used for transporting wafers at low temperature and room temperature.
- the tweezers 125a-2 is a material such as alumina or a quartz member having high heat resistance and poor thermal conductivity, and is used for transporting wafers at high temperature and normal temperature. That is, the tweezers 125a-1 is a low temperature substrate transport unit, and the tweezers 125a-2 is a high temperature substrate transport unit.
- the high temperature tweezers 125a-2 are preferably configured to have heat resistance of, for example, 100 ° C. or higher, more preferably 200 ° C. or higher.
- a mapping sensor can be installed on the low temperature tweeter 125a-1.
- the mapping sensor on the low temperature tweeter 125a-1 By providing the mapping sensor on the low temperature tweeter 125a-1, the number of wafers 200 in the load port unit 106 can be confirmed, the number of wafers 200 in the reaction chamber 201 can be confirmed, and the number of wafers 200 in the cooling chamber 204 can be confirmed. Will be able to do.
- the tweezers 125a-1 will be described as a low temperature tweezers, and the tweezers 125a-2 will be described as a high temperature tweezers, but the present invention is not limited thereto.
- the tweezers 125a-1 are made of materials such as alumina and quartz members with high heat resistance and poor thermal conductivity, and are used for transporting wafers at high and normal temperatures.
- the tweezers 125a-2 are made of ordinary aluminum materials. It may be used for transporting wafers at low temperature and room temperature. Further, both the tweezers 125a-1 and 125a-2 may be made of a material such as alumina or a quartz member having high heat resistance and poor thermal conductivity.
- a processing furnace In the area A surrounded by the broken line in FIG. 2, a processing furnace (processing chamber) 201 having a substrate processing structure as shown in FIG. 1 is configured. As shown in FIG. 3, a plurality of processing furnaces are provided in the present embodiment, but since the configurations of the processing furnaces are the same, only one configuration will be described, and the description of the other processing furnace configuration will be omitted. do.
- the processing furnace has a case 102 as a cavity (processing container) made of a material that reflects electromagnetic waves such as metal.
- the cap flange (closing plate) 104 made of a metal material is configured to close the upper end of the case 102 via an O-ring as a sealing member (not shown).
- the inner space of the case 102 and the cap flange 104 is mainly configured as a processing chamber 201 for processing a substrate such as a silicon wafer.
- a reaction tube (not shown) made of quartz that allows electromagnetic waves to pass through may be installed inside the case 102, or a processing container may be configured so that the inside of the reaction tube serves as a processing chamber.
- the processing chamber 201 may be configured by using the case 102 in which the ceiling is closed without providing the cap flange 104.
- a mounting table 210 is provided in the processing chamber 201, and a boat 217 as a substrate holder for holding the wafer 200 as a substrate is mounted on the upper surface of the mounting table 210.
- the wafer 200 to be processed and the susceptors 103a and 103b placed vertically above and below the wafer 200 so as to sandwich the wafer 200 are held at predetermined intervals.
- the susceptors 103a and 103b above and below the wafer 200 as a material such as a silicon plate (Si plate) or a silicon carbide plate (SiC plate), the concentration of electric field strength with respect to the edge of the wafer 200 is suppressed. do.
- quartz plates 101a and 101b as heat insulating plates may be held on the upper and lower surfaces of the susceptors 103a and 103b at predetermined intervals.
- the quartz plates 101a and 101b, respectively, and the susceptors 103a and 103b are made of the same parts, respectively. I will explain it by calling it.
- the case 102 as a processing container has, for example, a circular cross section, and is configured as a flat closed container.
- the transport housing 202 as the lower container is made of, for example, a metal material such as aluminum (Al) or stainless steel (SUS), quartz, or the like.
- the space surrounded by the case 102 may be referred to as a processing chamber 201 or a reaction area 201 as a processing space, and the space surrounded by the transport housing 202 may be referred to as a transport chamber or a transport area 203 as a transport space.
- the processing chamber 201 and the transport chamber 203 are not limited to being configured to be adjacent to each other in the horizontal direction as in the present embodiment, but may be configured to be adjacent to each other in the vertical direction to raise and lower a substrate holder having a predetermined structure. good.
- a substrate carry-in / carry-out outlet 206 adjacent to the gate valve 205 is provided on the side surface of the transport housing 202, and the wafer 200 passes through the board carry-in / carry-out port 206. It moves between the processing chamber 201 and the transport chamber 203.
- a choke structure having a length of 1/4 wavelength of the electromagnetic wave used is provided around the gate valve 205 or the substrate carry-in / carry-out port 206 as a measure against leakage of the electromagnetic wave described later.
- An electromagnetic wave supply unit as a heating device described in detail later is installed on the side surface of the case 102, and electromagnetic waves such as microwaves supplied from the electromagnetic wave supply unit are introduced into the processing chamber 201 to heat the wafer 200 and the like. , Wafer 200 is processed.
- the mounting table 210 is supported by a shaft 255 as a rotating shaft.
- the shaft 255 penetrates the bottom of the processing chamber 201 and is further connected to a drive mechanism 267 that rotates outside the processing chamber 201.
- the lower end of the shaft 255 is covered with a bellows 212, and the inside of the processing chamber 201 and the transport area 203 is kept airtight.
- the mounting table 210 is raised or lowered by the drive mechanism 267 so that the wafer 200 is at the wafer transfer position when the wafer 200 is transferred, and the wafer 200 is processed when the wafer 200 is processed. May be configured to rise or fall to the processing position (wafer processing position) in the processing chamber 201.
- An exhaust unit for exhausting the atmosphere of the processing chamber 201 is provided below the processing chamber 201 and on the outer peripheral side of the mounting table 210. As shown in FIG. 1, an exhaust port 221 is provided in the exhaust section. An exhaust pipe 231 is connected to the exhaust port 221, and a pressure regulator 244 such as an APC valve that controls the valve opening according to the pressure in the processing chamber 201 and a vacuum pump 246 are sequentially connected to the exhaust pipe 231. It is connected to the.
- a pressure regulator 244 such as an APC valve that controls the valve opening according to the pressure in the processing chamber 201 and a vacuum pump 246 are sequentially connected to the exhaust pipe 231. It is connected to the.
- the pressure regulator 244 is not limited to the APC valve as long as it can receive the pressure information in the processing chamber 201 and the feedback signal from the pressure sensor 245 described later to adjust the exhaust amount, and is not limited to the APC valve.
- the on-off valve and the pressure regulating valve may be configured to be used together.
- an exhaust unit (also referred to as an exhaust system or an exhaust line) is configured by an exhaust port 221, an exhaust pipe 231 and a pressure regulator 244.
- An exhaust port may be provided so as to surround the mounting table 210 so that gas can be exhausted from the entire circumference of the wafer 200.
- a vacuum pump 246 may be added to the configuration of the exhaust unit.
- the cap flange 104 is provided with a gas supply pipe 232 for supplying a processing gas for processing various substrates such as an inert gas, a raw material gas, and a reaction gas into the processing chamber 201.
- the gas supply pipe 232 is provided with a mass flow controller (MFC) 241 which is a flow rate controller (flow rate control unit) and a valve 243 which is an on-off valve in order from the upstream.
- MFC mass flow controller
- N2 nitrogen
- a plurality of types of gas can be supplied by using a configuration in which supply pipes are connected.
- a gas supply pipe provided with an MFC and a valve may be installed for each gas type.
- the gas supply system (gas supply unit) is composed of the gas supply pipe 232, MFC241, and valve 243.
- an inert gas flows through the gas supply system, it is also referred to as an inert gas supply system.
- the inert gas in addition to the N2 gas, a rare gas such as Ar gas, He gas, Ne gas, or Xe gas can be used.
- a temperature sensor 263 is installed on the cap flange 104 as a non-contact temperature measuring device. By adjusting the output of the microwave oscillator 655, which will be described later, based on the temperature information detected by the temperature sensor 263, the substrate is heated and the substrate temperature has a desired temperature distribution.
- the temperature sensor 263 is composed of a radiation thermometer such as an IR (Infrared Radiation) sensor.
- the temperature sensor 263 is installed so as to measure the surface temperature of the quartz plate 101a or the surface temperature of the wafer 200. When the susceptor as the heating element described above is provided, the surface temperature of the susceptor may be measured.
- the temperature of the wafer 200 (wafer temperature) is described in the present embodiment, it means the wafer temperature converted by the temperature conversion data described later, that is, the estimated wafer temperature, and the temperature sensor 263. It will be described as referring to the case where it means the temperature obtained by directly measuring the temperature of the wafer 200 and the case where it means both of them.
- the temperature showing the correlation between the temperature of the quartz plate 101 or the susceptor 103 and the wafer 200 is shown.
- the converted data may be stored in the storage device 121c or the external storage device 123.
- the temperature of the wafer 200 can be estimated by measuring only the temperature of the quartz plate 101, and the temperature of the wafer 200 can be estimated based on the estimated temperature of the wafer 200.
- the output of the microwave oscillator 655, that is, the heating device can be controlled.
- the means for measuring the temperature of the substrate is not limited to the radiation thermometer described above, and the temperature may be measured using a thermocouple, or the thermometer and the non-contact thermometer may be used in combination to measure the temperature. You may. However, when the temperature is measured using a thermocouple, it is necessary to arrange the thermocouple in the vicinity of the wafer 200 to measure the temperature. That is, since it is necessary to arrange the thermocouple in the processing chamber 201, the thermocouple itself is heated by the microwave supplied from the microwave oscillator described later, so that the temperature cannot be accurately measured. Therefore, it is preferable to use a non-contact thermometer as the temperature sensor 263.
- the temperature sensor 263 is not limited to being provided on the cap flange 104, but may be provided on the mounting table 210. Further, the temperature sensor 263 is not only directly installed on the cap flange 104 or the mounting table 210, but also indirectly measures by reflecting the synchrotron radiation from the measuring window provided on the cap flange 104 or the mounting table 210 with a mirror or the like. It may be configured to do so. Further, the temperature sensor 263 is not limited to one, and a plurality of temperature sensors 263 may be installed.
- Electromagnetic wave introduction ports 653-1 and 653-2 are installed on the side wall of the case 102.
- One ends of the waveguides 654-1 and 654-2 for supplying electromagnetic waves (microwaves) are connected to the electromagnetic wave introduction ports 653-1 and 653-2, respectively, in the processing chamber 201.
- Microwave oscillators (electromagnetic wave sources) 655-1 and 655-2 as heating sources that supply electromagnetic waves to the processing chamber 201 and heat them are connected to the other ends of the waveguides 654-1 and 654-2, respectively.
- the microwave oscillators 655-1 and 655-2 supply electromagnetic waves such as microwaves to the waveguides 654-1 and 654-2, respectively.
- microwave oscillators 655-1 and 655-2 magnetrons, klystrons and the like are used.
- the electromagnetic wave introduction ports 653-1 and 653-2, the waveguides 654-1 and 654-2, and the microwave oscillators 655-1 and 655-2 will be described when it is not necessary to distinguish them from each other.
- the description will be described as an electromagnetic wave introduction port 653, a waveguide 654, and a microwave oscillator 655.
- the frequency of the electromagnetic wave generated by the microwave oscillator 655 is preferably controlled to be in the frequency range of 13.56 MHz or more and 24.125 GHz or less. More preferably, it is preferably controlled to have a frequency of 2.45 GHz or 5.8 GHz.
- the frequencies of the microwave oscillators 655-1 and 655-2 may be the same frequency or may be installed at different frequencies.
- the present invention is not limited to this, and one or more microwave oscillators may be provided, and the case 102 may be provided. It may be arranged so as to be provided on different side surfaces such as opposite side surfaces.
- the electromagnetic wave supply unit electromagnettic wave supply device, microwave
- a supply unit and a microwave supply device are configured.
- a controller 121 which will be described later, is connected to each of the microwave oscillators 655-1 and 655-2.
- a temperature sensor 263 for measuring the temperature of the quartz plate 101a or 101b or the wafer 200 housed in the processing chamber 201 is connected to the controller 121.
- the temperature sensor 263 measures the temperature of the quartz plate 101 or the wafer 200 by the method described above and transmits the temperature to the controller 121, and the controller 121 controls the outputs of the microwave oscillators 655-1 and 655-2 to control the output of the wafer 200.
- the heating control method by the heating device includes a method of controlling the heating of the wafer 200 by controlling the voltage input to the microwave oscillator 655, and a time for turning on the power of the microwave oscillator 655 and turning it off.
- a method of controlling the heating of the wafer 200 by changing the time ratio can be used.
- the microwave oscillators 655-1 and 655-2 are controlled by the same control signal transmitted from the controller 121.
- the present invention is not limited to this, and the microwave oscillators 655-1 and 655-2 are individually controlled by transmitting individual control signals from the controller 121 to the microwave oscillators 655-1 and 655-2, respectively. You may.
- the controller 121 which is a control unit (control device, control means), includes a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port. It is configured as a computer equipped with 121d.
- the RAM 121b, the storage device 121c, and the I / O port 121d are configured so that data can be exchanged with the CPU 121a via the internal bus 121e.
- An input / output device 122 configured as, for example, a touch panel or the like is connected to the controller 121.
- the storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
- a control program that controls the operation of the substrate processing device, a process recipe that describes the procedure and conditions of the annealing (modification) process, and the like are readablely stored.
- the process recipes are combined so that the controller 121 can execute each procedure in the substrate processing step described later and obtain a predetermined result, and functions as a program.
- this process recipe, control program, etc. are collectively referred to as a program.
- a process recipe is also simply referred to as a recipe.
- the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily held.
- the I / O port 121d is connected to the above-mentioned transfer machine 125, MFC241, valve 243, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, drive mechanism 267, microwave oscillator 655 and the like.
- the CPU 121a is configured to read and execute a control program from the storage device 121c and read a recipe from the storage device 121c in response to an input of an operation command from the input / output device 122 or the like.
- the CPU 121a has a substrate transfer operation by the transfer machine, a flow rate adjustment operation of various gases by the MFC 241, an opening / closing operation of the valve 243, and a pressure adjustment operation by the APC valve 244 based on the pressure sensor 245 so as to follow the contents of the read recipe.
- the controller 121 installs the above-mentioned program stored in an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as MO, or a semiconductor memory such as a USB memory) 123 in a computer.
- an external storage device for example, a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as MO, or a semiconductor memory such as a USB memory
- the storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium.
- the term recording medium may include only the storage device 121c alone, it may include only the external storage device 123 alone, or it may include both of them.
- the program may be provided to the computer by using a communication means such as the Internet or a dedicated line without using the external storage device 123.
- the amount of deformation of the wafer can be suppressed to within 5 mm by setting the output at the time of preheating in a step shape of 3200 W.
- preheating was performed for 8 seconds On at 3200 W and 14 cycles (total: 140 seconds) at 2 seconds Off (0 W). Due to the stepped output, the temperature at the end of the susceptor also drops. After that, the substrate temperature rises to about 600 ° C. by irradiating with microwaves at 6 kW for 150 seconds. The maximum amount of deformation of the Si wafer at this time was suppressed to within 5 mm.
- FIG. 5 shows an example of the flow of substrate processing according to this embodiment.
- a method for modifying (crystallizing) an amorphous silicon film as a silicon-containing film formed on a substrate for example, a method for modifying (crystallizing) an amorphous silicon film as a silicon-containing film formed on a substrate.
- the operation of each unit constituting the substrate processing apparatus is controlled by the control unit described with reference to FIG.
- the word "wafer” it may mean the wafer itself or a laminate of a predetermined layer or film formed on the wafer and its surface.
- the substrate carry-in step (S802) is carried out, and the wafer 200 is carried into a predetermined processing chamber 201 (boat loading) by the opening / closing operation of the gate valve 205. That is, the two wafers placed on the low temperature tweezers 125a-1 and the high temperature tweezers 125a-2 are carried into the processing chamber 201.
- the atmosphere in the processing chamber 201 is controlled so that the pressure becomes a predetermined pressure (for example, 10 to 102000 Pa). Specifically, while exhausting by the vacuum pump 246, the valve opening degree of the pressure regulator 244 is feedback-controlled based on the pressure information detected by the pressure sensor 245, and the inside of the processing chamber 201 is set to a predetermined pressure.
- a predetermined pressure for example, 10 to 102000 Pa
- the drive mechanism 267 rotates the shaft 255 and is placed on the mounting table 210.
- the wafer 200 is rotated through the boat 217 of the above.
- an inert gas such as nitrogen gas is supplied via the gas supply pipe 232 (S804).
- the pressure in the processing chamber 201 is a predetermined value in the range of 10 Pa or more and 102000 Pa or less, and is adjusted to be, for example, 101300 Pa or more and 101650 Pa or less.
- the shaft may be rotated during the substrate loading step S402, that is, after the wafer 200 has been delivered into the processing chamber 201. It was
- the microwave oscillator 655 supplies the first microwave to the processing chamber 201 via the above-mentioned parts.
- the ON time for example, 8 seconds
- the OFF time 2 seconds
- a preheating treatment for heating the wafer 200 is performed. This makes it possible to prevent the wafer from warping or cracking by slowing the temperature rise of the wafer.
- the microwave oscillator 655 uses the above-mentioned parts to enter the processing chamber 201 with a second microwave (for example, 6000 W). Is supplied for a predetermined time (for example, 160 seconds).
- a second microwave for example, 6000 W
- a predetermined time for example, 160 seconds.
- the wafer 200 is heated to a temperature of 100 ° C. or higher and 1000 ° C. or lower, preferably 400 ° C. or higher and 900 ° C. or lower, and further.
- it is heated to a temperature of 500 ° C. or higher and 700 ° C. or lower.
- the wafer 200 can be treated on the substrate at a temperature at which the wafer 200 efficiently absorbs microwaves, and the speed of the reforming treatment can be improved.
- the processing is performed at a temperature higher than 1000 ° C., the surface of the wafer is deteriorated and it becomes difficult to absorb microwaves, which makes it difficult to heat the wafer. Therefore, it is desirable to process the substrate in the above-mentioned temperature range.
- the preheating step (S805) the amount of deformation of the wafer was suppressed to within 5 mm by making the output at the time of preheating in a step shape of 3200 W.
- the stepped state is preheating for 8 seconds On at 3200 W and 14 cycles (total: 140 seconds) at 2 seconds Off (0 W). Due to this stepped output, the temperature at the end of the susceptor also drops.
- the substrate temperature is raised to about 600 ° C. by irradiating with microwaves at 6000 W for 160 seconds. The maximum amount of deformation of the Si wafer at this time was suppressed to within 5 mm.
- Substrate cooling step (S808) The one wafer 200 after heating (treatment) carried out is transferred to the one wafer 200 after heating (treatment) carried out by the tweeter 125a-2 for high temperature.
- the device 125b and the transfer device elevator 125c are continuously operated to move to the cooling chamber 204, and two wafers 200 are placed in the cooling chamber 108 by the high temperature tweeter 125a-2 and placed for a predetermined time. It is cooled by this (S808).
- the two wafers 200 cooled by the substrate cooling step S808 are taken out from the cooling chamber 108 and transported to a predetermined pod.
- the first output of the microwave is 3200 W, but the first output is 2000 W to 4000 W.
- the merit at 2000 W to 4000 W is that the time from the start of warping of the wafer to the maximum and settling can be shortened.
- the disadvantage of lower than 2000W is that it takes too long for the wafer temperature to start rising.
- the demerit when the temperature is higher than 4000 W is that the wafer temperature rises rapidly and the wafer warp becomes too large, so that there is a concern of contact with others.
- the second microwave is described at 6000 W, but the second microwave output is 4000 W to 12000 W.
- the merit at 4000W to 12000W is that the process wafer can be adjusted to the appropriate temperature for treatment.
- the disadvantage when it is lower than 4000W is that the treatment requires a long time or the treatment is insufficient.
- the demerit when the W is higher than 12000 W is that the wafer exceeds the limit of being able to absorb microwaves and discharge or plasma is generated, although it depends on the number of wafers to be processed at one time.
- the time when the microwave is turned on is 8 seconds and the time when the microwave is turned off is 2 seconds, but the former is 5 to 20 seconds and the latter is 1 second. It should be ⁇ 5 seconds.
- the merit of 5 to 20 seconds is that the temperature can be raised quickly while suppressing the warp of the wafer.
- the disadvantage when it is shorter than 5 seconds is that the wafer does not warm easily, and the disadvantage when it is longer than 20 seconds is that the wafer temperature rises rapidly and the wafer warp becomes large and there is a concern that it will come into contact with other wafers. be.
- the advantage when it is 1 second to 5 seconds is that the wafer can be suppressed from warping without cooling too much, and the disadvantage when it is shorter than 1 second is that the temperature equalization time is insufficient.
- the disadvantage of longer than 5 seconds is that it is overcooled and it takes time to return to temperature.
- the reforming treatment time is 160 seconds, but 60 seconds to 1800 seconds may be sufficient.
- the advantage of 60 seconds to 1800 seconds is that you want to shorten the processing time corresponding to the treatment process under development, but in reality it tends to be long, and the disadvantage of shorter than 60 seconds is that it is difficult to match the uniformity in the wafer surface.
- the disadvantage of longer than 1800 seconds is that the throughput is reduced.
- the device is cyclically irradiated with microwaves in order to make the in-plane temperature distribution of the semiconductor substrate uniform, and promotes heat conduction in the semiconductor substrate when the microwaves are weak or off.
- the temperature difference on the semiconductor substrate it is possible to suppress the occurrence of warpage and cracking of the semiconductor substrate, and further, the contact between the semiconductor substrates can be suppressed.
- cyclic irradiation it is possible to irradiate high power microwaves while keeping the temperature of the semiconductor substrate low, and it is possible to cope with a semiconductor substrate having a temperature limit.
- the embodiment described above can be appropriately modified and used, and its effect can also be obtained.
- the process of modifying an amorphous silicon film into a polysilicon film as a film containing silicon as a main component has been described, but the present invention is not limited to this, and oxygen (O), nitrogen (N), and carbon (
- the film formed on the surface of the wafer 200 may be modified by supplying a gas containing at least one of C) and hydrogen (H).
- a hafnium oxide film (HfxOy film) as a high dielectric film is formed on the wafer 200, the hafnium oxide film is heated by supplying microwaves while supplying a gas containing oxygen. It is possible to replenish the deficient oxygen and improve the characteristics of the high dielectric film.
- hafnium oxide film is shown here, it is not limited to this, but aluminum (Al), titanium (Ti), zirconium (Zr), tantalum (Ta), niobium (Nb), lanthanum (La), and cerium ( An oxide film containing a metal element containing at least one of Ce), yttrium (Y), barium (Ba), strontium (Sr), calcium (Ca), lead (Pb), molybdenum (Mo), tungsten (W) and the like. That is, it can be suitably applied even in the case of modifying a metal-based oxide film.
- the TIOCN film, the TIOC film, the TION film, the TIO film, the ZrOCN film, the ZrOC film, the ZrON film, the ZrO film, the HfOCN film, the HfOC film, the HfON film, and the HfO film are formed on the wafer 200.
- WOC film, WON film, and WO film can also be suitably applied.
- a film containing silicon as a main component doped with impurities may be heated.
- Si-based oxide film such as (membrane).
- the impurities include, for example, at least one or more of bromine (B), carbon (C), nitrogen (N), aluminum (Al), phosphorus (P), gallium (Ga), arsenic (As) and the like.
- a resist film based on at least one of a methyl methacrylate resin (Polymethyl methyllate: PMMA), an epoxy resin, a novolak resin, a polyvinyl phenyl resin, or the like may be used.
- the present invention is not limited to this, and the patterning process of the manufacturing process of the liquid crystal panel, the patterning process of the manufacturing process of the solar cell, and the patterning process of the manufacturing process of the power device are not limited to this. It can also be applied to technologies for processing substrates such as.
- a substrate processing apparatus having a control unit configured as described above.
- Appendix 2 The substrate processing apparatus according to Appendix 1, wherein the first microwave output is 2000 W to 4000 W.
- Appendix 4 The substrate processing apparatus according to Appendix 1, wherein the supply time is 5 seconds to 20 seconds, and the stop time is 1 second to 5 seconds.
- Appendix 5 The substrate processing apparatus according to Appendix 1, wherein the reforming treatment time is 60 seconds to 1800 seconds.
- Appendix 6 The substrate processing apparatus according to Appendix 1, wherein an amorphous silicon film is formed on the substrate.
- Appendix 8 The method for manufacturing a semiconductor device according to Appendix 7, wherein the first microwave output is 2000 W to 4000 W.
- Appendix 9 The method for manufacturing a semiconductor device according to Appendix 7 or 8, wherein the second microwave output is 4000 W to 12000 W.
- Appendix 10 The method for manufacturing a semiconductor device according to Appendix 7, wherein the supply time is 5 seconds to 20 seconds, and the stop time is 1 second to 5 seconds.
- Appendix 11 The method for manufacturing a semiconductor device according to Appendix 7, wherein the time of the reforming step is 60 seconds to 1800 seconds.
- Appendix 12 The method for manufacturing a semiconductor device according to Appendix 7, wherein the heating step and the reforming step are performed on a substrate on which an amorphous silicon film is formed.
- Appendix 14 The program according to Appendix 13, wherein the first microwave output is 2000 W to 4000 W.
- Appendix 15 The program according to Appendix 13 or 14, wherein the second microwave output is 4000 W to 12000 W.
- Appendix 18 The program according to Appendix 11, wherein the heating step and the reforming step are performed on a substrate on which an amorphous silicon film is formed.
- Substrate processing device 101 Quartz plate 103 Suceptor 199 Board 200 Wafer (semiconductor substrate) 655 Microwave oscillator
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Abstract
Description
処理室201内の圧力を大気圧復帰させた後、ゲートバルブ205を開放し処理室201と搬送室203とを空間的に連通させる。その後、ボート217に載置されている加熱(処理)後の1枚のウエハ200を移載機125の高温用のツィーザ125a-2によって、搬送室203に搬出する(S807)。
更に、OFFしている時間について、1秒~5秒の時のメリットは、ウエハを冷まし過ぎず ウエハの反りを抑制できる点、1秒よりも短い時のデメリットは、温度均一化時間が足りない、5秒よりも長いときのデメリットは、冷却され過ぎて温度戻りに時間がかかる点である。
基板を処理する処理室と、
前記処理室にマイクロ波を供給するマイクロ波発振器と、
前記マイクロ波を第1のマイクロ波出力で、マイクロ波を供給する供給時間と、前記供給時間より短いマイクロ波を停止する停止時間と、を所定回数または所定時間繰り返して前記基板に供給して加熱する加熱処理と、前記第1のマイクロ波出力より高い第2のマイクロ波出力を維持しながら前記基板に所定時間供給する改質処理と、を行うように前記マイクロ波発振器を制御することが可能なように構成される制御部と、を有する基板処理装置。
前記第1のマイクロ波出力は、2000W~4000Wである付記1に記載の基板処理装置。
前記第2のマイクロ波出力は、4000W~12000Wである付記1又は2に記載の基板処理装置。
前記供給時間は5秒~20秒であって、前記停止時間は1秒~5秒である付記1に記載の基板処理装置。
前記改質処理する時間は、60秒~1800秒である付記1に記載の基板処理装置。
前記基板には、アモルファスシリコン膜が形成されている付記1に記載の基板処理装置。
基板を基板処理装置の処理室に搬入する工程と、
マイクロ波を第1のマイクロ波出力で、前記第1のマイクロ波を供給する供給時間と、前記供給時間より短い前記第1のマイクロ波を停止する停止時間と、を所定回数または第1の所定時間繰り返して前記基板に供給して加熱する加熱工程と、
前記第1のマイクロ波出力より高い第2のマイクロ波出力を維持しながら前記基板に前記第2のマイクロ波を第2の所定時間供給する改質工程と、
を行う半導体装置の製造方法。
前記第1のマイクロ波出力は、2000W~4000Wである付記7に記載の半導体装置の製造方法。
前記第2のマイクロ波出力は、4000W~12000Wである付記7又は8に記載の半導体装置の製造方法。
前記供給時間は5秒~20秒であって、前記停止時間は1秒~5秒である付記7に記載の半導体装置の製造方法。
前記改質工程の時間は、60秒~1800秒である付記7に記載の半導体装置の製造方法。
アモルファスシリコン膜が形成されている基板に対して、前記加熱工程と、前記改質工程と、を行う付記7に記載の半導体装置の製造方法。
基板を基板処理装置の処理室に搬入する手順と、
マイクロ波を第1のマイクロ波出力で、前記第1のマイクロ波を供給する供給時間と、前記供給時間より短いマイクロ波を停止する停止時間と、を所定回数または第1の所定時間繰り返して前記基板に供給して加熱する加熱手順と、
前記第1のマイクロ波出力より高い第2のマイクロ波出力を維持しながら前記基板に前記第2マイクロ波を第2の所定時間供給する改質手順と、
をコンピュータにより前記基板処理装置に実行させるプログラム。
前記第1のマイクロ波出力は、2000W~4000Wである付記13に記載のプログラム。
前記第2のマイクロ波出力は、4000W~12000Wである付記13又は14に記載のプログラム。
前記供給時間は5秒~20秒であって、前記停止時間は1秒~5秒である付記13に記載のプログラム。
前記改質手順の時間は、60秒~1800秒である付記13に記載のプログラム。
アモルファスシリコン膜が形成されている基板に対して、前記加熱工程と、前記改質工程と、を行う付記11に記載のプログラム。
Claims (18)
- 基板を処理する処理室と、
前記処理室にマイクロ波を供給するマイクロ波発振器と、
前記マイクロ波を第1のマイクロ波出力で、前記第1のマイクロ波を供給する供給時間と、前記供給時間より短い前記第1のマイクロ波を停止する停止時間と、を所定回数または第1の所定時間繰り返して前記第1のマイクロ波を前記基板に供給して加熱する加熱処理と、前記第1のマイクロ波出力より高い第2のマイクロ波出力を維持しながら前記第2のマイクロ波を前記基板に第2の所定時間供給する改質処理と、を行うように前記マイクロ波発振器を制御することが可能なように構成される制御部と、
を有する基板処理装置。 - 前記第1のマイクロ波出力は、2000W~4000Wである請求項1に記載の基板処理装置。
- 前記第2のマイクロ波出力は、4000W~12000Wである請求項1又は請求項2に記載の基板処理装置。
- 前記供給時間は5秒~20秒であって、前記停止時間は1秒~5秒である請求項1~請求項3のいずれか一項に記載の基板処理装置。
- 前記改質処理する時間は、60秒~1800秒である請求項1~請求項4のいずれか一項に記載の基板処理装置。
- 前記基板には、アモルファスシリコン膜が形成されている請求項1~請求項5のいずれか一項に記載の基板処理装置。
- 基板を基板処理装置の処理室に搬入する工程と、
マイクロ波を第1のマイクロ波出力で、前記第1のマイクロ波を供給する供給時間と、前記供給時間より短い前記第1のマイクロ波を停止する停止時間と、を所定回数または第1の所定時間繰り返して前記基板に供給して加熱する加熱工程と、
前記第1のマイクロ波出力より高い第2のマイクロ波出力を維持しながら前記基板に前記第2のマイクロ波を第2の所定時間供給する改質工程と、を行う半導体装置の製造方法。 - 前記第1のマイクロ波出力は、2000W~4000Wである請求項7に記載の半導体装置の製造方法。
- 前記第2のマイクロ波出力は、4000W~12000Wである請求項7又は請求項8に記載の半導体装置の製造方法。
- 前記供給時間は5秒~20秒であって、前記停止時間は1秒~5秒である請求項7~9のいずれか一項に記載の半導体装置の製造方法。
- 前記改質工程の時間は、60秒~1800秒である請求項7~請求項10のいずれか一項に記載の半導体装置の製造方法。
- アモルファスシリコン膜が形成されている基板に対して、前記加熱工程と、前記改質工程と、を行う請求項7~請求項11のいずれか一項に記載の半導体装置の製造方法。
- 基板を基板処理装置の処理室に搬入する手順と、
マイクロ波を第1のマイクロ波出力で、前記第1のマイクロ波を供給する供給時間と、前記供給時間より短い前記第1のマイクロ波を停止する停止時間と、を所定回数または第1の所定時間繰り返して前記基板に供給して加熱する加熱手順と、
前記第1のマイクロ波出力より高い第2のマイクロ波出力を維持しながら前記基板に前記第2のマイクロ波を第2の所定時間供給する改質手順と、
をコンピュータにより前記基板処理装置に実行させるプログラム。 - 前記第1のマイクロ波出力は、2000W~4000Wである請求項13に記載のプログラム。
- 前記第2のマイクロ波出力は、4000W~12000Wである請求項13又は請求項14に記載のプログラム。
- 前記供給時間は5秒~20秒であって、前記停止時間は1秒~5秒である請求項13~請求項15のいずれか一項に記載のプログラム。
- 前記改質手順の時間は、60秒~1800秒である請求項13~請求項16のいずれか一項に記載のプログラム。
- アモルファスシリコン膜が形成されている基板に対して、前記加熱工程と、前記改質工程と、を行う請求項13~請求項17のいずれか一項に記載のプログラム。
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