|
JP4164562B2
(ja)
|
2002-09-11 |
2008-10-15 |
独立行政法人科学技術振興機構 |
ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
|
|
TWI481024B
(zh)
|
2005-01-28 |
2015-04-11 |
半導體能源研究所股份有限公司 |
半導體裝置，電子裝置，和半導體裝置的製造方法
|
|
US7928938B2
(en)
|
2005-04-19 |
2011-04-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including memory circuit, display device and electronic apparatus
|
|
US8629819B2
(en)
|
2005-07-14 |
2014-01-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
|
US7712009B2
(en)
|
2005-09-21 |
2010-05-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Cyclic redundancy check circuit and semiconductor device having the cyclic redundancy check circuit
|
|
CN101278403B
(zh)
|
2005-10-14 |
2010-12-01 |
株式会社半导体能源研究所 |
半导体器件及其制造方法
|
|
EP2924498A1
(en)
|
2006-04-06 |
2015-09-30 |
Semiconductor Energy Laboratory Co, Ltd. |
Liquid crystal desplay device, semiconductor device, and electronic appliance
|
|
CN103320755A
(zh)
|
2006-12-13 |
2013-09-25 |
出光兴产株式会社 |
溅射靶及氧化物半导体膜
|
|
JP5542297B2
(ja)
|
2007-05-17 |
2014-07-09 |
株式会社半導体エネルギー研究所 |
液晶表示装置、表示モジュール及び電子機器
|
|
JP4989309B2
(ja)
|
2007-05-18 |
2012-08-01 |
株式会社半導体エネルギー研究所 |
液晶表示装置
|
|
WO2009014155A1
(en)
|
2007-07-25 |
2009-01-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Photoelectric conversion device and electronic device having the same
|
|
US9041202B2
(en)
|
2008-05-16 |
2015-05-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of the same
|
|
US8314765B2
(en)
|
2008-06-17 |
2012-11-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit, display device, and electronic device
|
|
WO2010004944A1
(en)
|
2008-07-10 |
2010-01-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device and electronic device using the same
|
|
JP5616038B2
(ja)
|
2008-07-31 |
2014-10-29 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
TWI450399B
(zh)
|
2008-07-31 |
2014-08-21 |
Semiconductor Energy Lab |
半導體裝置及其製造方法
|
|
TWI500159B
(zh)
|
2008-07-31 |
2015-09-11 |
Semiconductor Energy Lab |
半導體裝置和其製造方法
|
|
US8945981B2
(en)
|
2008-07-31 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
TWI875442B
(zh)
|
2008-07-31 |
2025-03-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的製造方法
|
|
JP5480554B2
(ja)
|
2008-08-08 |
2014-04-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI642113B
(zh)
|
2008-08-08 |
2018-11-21 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
|
TWI500160B
(zh)
|
2008-08-08 |
2015-09-11 |
Semiconductor Energy Lab |
半導體裝置及其製造方法
|
|
TWI511299B
(zh)
|
2008-09-01 |
2015-12-01 |
Semiconductor Energy Lab |
半導體裝置的製造方法
|
|
US9082857B2
(en)
|
2008-09-01 |
2015-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising an oxide semiconductor layer
|
|
JP5627071B2
(ja)
|
2008-09-01 |
2014-11-19 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
KR101772377B1
(ko)
|
2008-09-12 |
2017-08-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
KR20110056542A
(ko)
|
2008-09-12 |
2011-05-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
KR101812935B1
(ko)
|
2008-09-12 |
2018-01-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
디스플레이 장치
|
|
KR102094683B1
(ko)
|
2008-09-19 |
2020-03-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시장치
|
|
KR101609557B1
(ko)
|
2008-09-19 |
2016-04-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치
|
|
KR101636755B1
(ko)
|
2008-09-19 |
2016-07-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
WO2010032619A1
(en)
|
2008-09-19 |
2010-03-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
WO2010038599A1
(en)
|
2008-10-01 |
2010-04-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
EP2172804B1
(en)
|
2008-10-03 |
2016-05-11 |
Semiconductor Energy Laboratory Co, Ltd. |
Display device
|
|
EP2172977A1
(en)
|
2008-10-03 |
2010-04-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
WO2010038820A1
(en)
|
2008-10-03 |
2010-04-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
CN101714546B
(zh)
|
2008-10-03 |
2014-05-14 |
株式会社半导体能源研究所 |
显示装置及其制造方法
|
|
CN101719493B
(zh)
|
2008-10-08 |
2014-05-14 |
株式会社半导体能源研究所 |
显示装置
|
|
JP5361651B2
(ja)
|
2008-10-22 |
2013-12-04 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US8741702B2
(en)
|
2008-10-24 |
2014-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
WO2010047288A1
(en)
|
2008-10-24 |
2010-04-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductordevice
|
|
KR101667909B1
(ko)
|
2008-10-24 |
2016-10-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치의 제조방법
|
|
JP5442234B2
(ja)
|
2008-10-24 |
2014-03-12 |
株式会社半導体エネルギー研究所 |
半導体装置及び表示装置
|
|
US8106400B2
(en)
|
2008-10-24 |
2012-01-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR101633142B1
(ko)
|
2008-10-24 |
2016-06-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
JP5616012B2
(ja)
|
2008-10-24 |
2014-10-29 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
WO2010050419A1
(en)
|
2008-10-31 |
2010-05-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit and display device
|
|
KR101631454B1
(ko)
|
2008-10-31 |
2016-06-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
논리회로
|
|
TWI606520B
(zh)
|
2008-10-31 |
2017-11-21 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
TWI487104B
(zh)
|
2008-11-07 |
2015-06-01 |
Semiconductor Energy Lab |
半導體裝置和其製造方法
|
|
CN102210025A
(zh)
|
2008-11-07 |
2011-10-05 |
株式会社半导体能源研究所 |
半导体器件
|
|
TW202025500A
(zh)
|
2008-11-07 |
2020-07-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
|
KR101432764B1
(ko)
|
2008-11-13 |
2014-08-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치의 제조방법
|
|
TWI536577B
(zh)
|
2008-11-13 |
2016-06-01 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
US8232947B2
(en)
|
2008-11-14 |
2012-07-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
|
JP2010153802A
(ja)
|
2008-11-20 |
2010-07-08 |
Semiconductor Energy Lab Co Ltd |
半導体装置及び半導体装置の作製方法
|
|
KR102025505B1
(ko)
|
2008-11-21 |
2019-09-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
TWI749283B
(zh)
|
2008-11-28 |
2021-12-11 |
日商半導體能源研究所股份有限公司 |
液晶顯示裝置
|
|
TWI585955B
(zh)
|
2008-11-28 |
2017-06-01 |
半導體能源研究所股份有限公司 |
光感測器及顯示裝置
|
|
TWI606593B
(zh)
|
2008-11-28 |
2017-11-21 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
|
JP5491833B2
(ja)
|
2008-12-05 |
2014-05-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR101751661B1
(ko)
|
2008-12-19 |
2017-06-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터의 제작 방법
|
|
WO2010071183A1
(en)
|
2008-12-19 |
2010-06-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
EP2202802B1
(en)
|
2008-12-24 |
2012-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit and semiconductor device
|
|
US8114720B2
(en)
|
2008-12-25 |
2012-02-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US8441007B2
(en)
|
2008-12-25 |
2013-05-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and manufacturing method thereof
|
|
TWI549198B
(zh)
|
2008-12-26 |
2016-09-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
KR101648927B1
(ko)
|
2009-01-16 |
2016-08-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
US8492756B2
(en)
|
2009-01-23 |
2013-07-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US8174021B2
(en)
|
2009-02-06 |
2012-05-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of manufacturing the semiconductor device
|
|
US8247276B2
(en)
|
2009-02-20 |
2012-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor, method for manufacturing the same, and semiconductor device
|
|
US8841661B2
(en)
|
2009-02-25 |
2014-09-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
|
|
US8704216B2
(en)
|
2009-02-27 |
2014-04-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US8461582B2
(en)
|
2009-03-05 |
2013-06-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US20100224878A1
(en)
|
2009-03-05 |
2010-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101671210B1
(ko)
|
2009-03-06 |
2016-11-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
KR102195170B1
(ko)
|
2009-03-12 |
2020-12-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
TWI485781B
(zh)
|
2009-03-13 |
2015-05-21 |
半導體能源研究所股份有限公司 |
半導體裝置及該半導體裝置的製造方法
|
|
TWI529942B
(zh)
|
2009-03-27 |
2016-04-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
KR101681884B1
(ko)
|
2009-03-27 |
2016-12-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치, 표시장치 및 전자기기
|
|
KR101752640B1
(ko)
|
2009-03-27 |
2017-06-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치
|
|
US8927981B2
(en)
|
2009-03-30 |
2015-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI489628B
(zh)
|
2009-04-02 |
2015-06-21 |
Semiconductor Energy Lab |
半導體裝置和其製造方法
|
|
TWI476917B
(zh)
|
2009-04-16 |
2015-03-11 |
Semiconductor Energy Lab |
半導體裝置和其製造方法
|
|
JP5751762B2
(ja)
|
2009-05-21 |
2015-07-22 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
EP2256795B1
(en)
|
2009-05-29 |
2014-11-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method for oxide semiconductor device
|
|
EP2256814B1
(en)
|
2009-05-29 |
2019-01-16 |
Semiconductor Energy Laboratory Co, Ltd. |
Oxide semiconductor device and method for manufacturing the same
|
|
JP5564331B2
(ja)
|
2009-05-29 |
2014-07-30 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
JP4571221B1
(ja)
*
|
2009-06-22 |
2010-10-27 |
富士フイルム株式会社 |
Ｉｇｚｏ系酸化物材料及びｉｇｚｏ系酸化物材料の製造方法
|
|
KR101810699B1
(ko)
|
2009-06-30 |
2018-01-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 제작 방법
|
|
KR102011616B1
(ko)
|
2009-06-30 |
2019-08-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 제조 방법
|
|
KR102458127B1
(ko)
|
2009-06-30 |
2022-10-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 제조 방법
|
|
KR101944656B1
(ko)
|
2009-06-30 |
2019-04-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 제조 방법
|
|
EP2449593B1
(en)
|
2009-07-03 |
2019-08-28 |
Semiconductor Energy Laboratory Co, Ltd. |
Method for manufacturing semiconductor device
|
|
KR101476817B1
(ko)
|
2009-07-03 |
2014-12-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터를 갖는 표시 장치 및 그 제작 방법
|
|
WO2011004723A1
(en)
|
2009-07-10 |
2011-01-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method the same
|
|
WO2011004724A1
(en)
|
2009-07-10 |
2011-01-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
KR102011614B1
(ko)
|
2009-07-10 |
2019-08-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
WO2011007682A1
(en)
|
2009-07-17 |
2011-01-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
|
WO2011010545A1
(en)
|
2009-07-18 |
2011-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2011010543A1
(en)
|
2009-07-18 |
2011-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
KR101870460B1
(ko)
|
2009-07-18 |
2018-06-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제조 방법
|
|
KR101785992B1
(ko)
|
2009-07-24 |
2017-10-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102526493B1
(ko)
|
2009-07-31 |
2023-04-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 디바이스 및 그 형성 방법
|
|
KR101913995B1
(ko)
|
2009-07-31 |
2018-10-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
WO2011013523A1
(en)
|
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2011-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
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(ko)
|
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2020-09-08 |
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반도체 장치 및 그 제조 방법
|
|
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(zh)
|
2009-08-07 |
2020-08-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
|
EP2284891B1
(en)
|
2009-08-07 |
2019-07-24 |
Semiconductor Energy Laboratory Co, Ltd. |
Semiconductor device and manufacturing method thereof
|
|
TWI634642B
(zh)
|
2009-08-07 |
2018-09-01 |
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半導體裝置和其製造方法
|
|
TWI596741B
(zh)
|
2009-08-07 |
2017-08-21 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
|
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(zh)
|
2009-08-07 |
2017-11-01 |
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半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置
|
|
US8115883B2
(en)
|
2009-08-27 |
2012-02-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and method for manufacturing the same
|
|
US9805641B2
(en)
|
2009-09-04 |
2017-10-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device including the same
|
|
CN104681447A
(zh)
|
2009-09-04 |
2015-06-03 |
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半导体器件的制造方法
|
|
KR101746198B1
(ko)
|
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2017-06-12 |
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표시장치 및 전자기기
|
|
WO2011027702A1
(en)
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device and method for manufacturing the same
|
|
WO2011027656A1
(en)
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and display device
|
|
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(zh)
|
2009-09-04 |
2016-02-10 |
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发光装置及其制造方法
|
|
WO2011027676A1
(en)
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
CN103151387A
(zh)
|
2009-09-04 |
2013-06-12 |
株式会社半导体能源研究所 |
半导体器件及其制造方法
|
|
WO2011033914A1
(en)
|
2009-09-16 |
2011-03-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of display device and display device
|
|
CN105428424A
(zh)
|
2009-09-16 |
2016-03-23 |
株式会社半导体能源研究所 |
晶体管及显示设备
|
|
US9715845B2
(en)
|
2009-09-16 |
2017-07-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor display device
|
|
KR102009813B1
(ko)
|
2009-09-16 |
2019-08-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
발광 장치 및 이의 제조 방법
|
|
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(ko)
|
2009-09-16 |
2022-03-11 |
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표시 장치
|
|
KR101810383B1
(ko)
|
2009-09-24 |
2017-12-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막 및 반도체 장치
|
|
WO2011037008A1
(en)
|
2009-09-24 |
2011-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
|
|
KR101788538B1
(ko)
|
2009-09-24 |
2017-10-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
CN105161543A
(zh)
|
2009-09-24 |
2015-12-16 |
株式会社半导体能源研究所 |
半导体器件及其制造方法
|
|
KR20180094132A
(ko)
|
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2018-08-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
구동 회로, 상기 구동 회로를 포함하는 표시 장치, 및 상기 표시 장치를 포함하는 전자 기기
|
|
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(ko)
|
2009-09-24 |
2013-12-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 소자 및 그 제조 방법
|
|
KR20120090972A
(ko)
|
2009-09-24 |
2012-08-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
TWI512997B
(zh)
|
2009-09-24 |
2015-12-11 |
Semiconductor Energy Lab |
半導體裝置，電源電路，和半導體裝置的製造方法
|
|
CN102667985B
(zh)
|
2009-09-30 |
2016-06-01 |
株式会社半导体能源研究所 |
电化学电容器
|
|
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(zh)
|
2009-09-30 |
2015-06-03 |
株式会社半导体能源研究所 |
氧化还原电容器以及其制造方法
|
|
WO2011040213A1
(en)
|
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2011-04-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR20120084751A
(ko)
|
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2012-07-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
KR101763959B1
(ko)
|
2009-10-08 |
2017-08-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 표시 장치, 및 전자 기기
|
|
KR101980505B1
(ko)
|
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2019-05-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체층, 반도체 장치 및 그 제조 방법
|
|
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(ko)
|
2009-10-09 |
2019-02-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101790704B1
(ko)
|
2009-10-09 |
2017-11-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
시프트 레지스터 및 표시 장치
|
|
KR101759504B1
(ko)
|
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2017-07-19 |
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발광 표시 장치 및 이를 포함한 전자 기기
|
|
KR101820973B1
(ko)
|
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2018-01-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치 제조 방법
|
|
EP2486595B1
(en)
|
2009-10-09 |
2019-10-23 |
Semiconductor Energy Laboratory Co. Ltd. |
Semiconductor device
|
|
CN107195328B
(zh)
|
2009-10-09 |
2020-11-10 |
株式会社半导体能源研究所 |
移位寄存器和显示装置以及其驱动方法
|
|
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(ko)
|
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2018-01-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
WO2011043194A1
(en)
|
2009-10-09 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2011043206A1
(en)
|
2009-10-09 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101745747B1
(ko)
|
2009-10-16 |
2017-06-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
논리 회로 및 반도체 장치
|
|
KR102143040B1
(ko)
|
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2020-08-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 이를 구비한 전자 장치
|
|
KR101772639B1
(ko)
|
2009-10-16 |
2017-08-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102689629B1
(ko)
|
2009-10-16 |
2024-07-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2011046010A1
(en)
|
2009-10-16 |
2011-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and electronic device including the liquid crystal display device
|
|
CN104485336B
(zh)
|
2009-10-21 |
2018-01-02 |
株式会社半导体能源研究所 |
半导体器件
|
|
KR102377866B1
(ko)
|
2009-10-21 |
2022-03-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
아날로그 회로 및 반도체 장치
|
|
KR101875794B1
(ko)
|
2009-10-21 |
2018-08-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 표시 장치를 갖는 전자 기기
|
|
KR101803554B1
(ko)
|
2009-10-21 |
2017-11-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 제작방법
|
|
KR20170024130A
(ko)
|
2009-10-21 |
2017-03-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
WO2011048923A1
(en)
|
2009-10-21 |
2011-04-28 |
Semiconductor Energy Laboratory Co., Ltd. |
E-book reader
|
|
CN102598280B
(zh)
|
2009-10-21 |
2016-05-18 |
株式会社半导体能源研究所 |
液晶显示器件及包括该液晶显示器件的电子设备
|
|
WO2011049230A1
(en)
|
2009-10-21 |
2011-04-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Voltage regulator circuit
|
|
KR101969279B1
(ko)
|
2009-10-29 |
2019-04-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR20240042555A
(ko)
|
2009-10-29 |
2024-04-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2011052437A1
(en)
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Non-linear element, display device including non-linear element, and electronic device including display device
|
|
KR102142450B1
(ko)
|
2009-10-30 |
2020-08-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작방법
|
|
KR101499494B1
(ko)
|
2009-10-30 |
2015-03-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
논리 회로 및 반도체 장치
|
|
WO2011052382A1
(en)
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2011052413A1
(en)
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Non-linear element, display device, and electronic device
|
|
KR101751712B1
(ko)
|
2009-10-30 |
2017-06-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
전압 조정 회로
|
|
KR20120091243A
(ko)
|
2009-10-30 |
2012-08-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101752518B1
(ko)
|
2009-10-30 |
2017-06-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2011052410A1
(en)
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Power diode, rectifier, and semiconductor device including the same
|
|
KR101752348B1
(ko)
|
2009-10-30 |
2017-06-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR20120099657A
(ko)
|
2009-10-30 |
2012-09-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터
|
|
WO2011052344A1
(en)
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device, driving method of the same, and electronic appliance including the same
|
|
KR102223595B1
(ko)
|
2009-11-06 |
2021-03-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
WO2011055644A1
(en)
|
2009-11-06 |
2011-05-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
JP5539846B2
(ja)
|
2009-11-06 |
2014-07-02 |
株式会社半導体エネルギー研究所 |
評価方法、半導体装置の作製方法
|
|
CN104393007A
(zh)
|
2009-11-06 |
2015-03-04 |
株式会社半导体能源研究所 |
半导体装置
|
|
KR101952065B1
(ko)
|
2009-11-06 |
2019-02-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 동작 방법
|
|
CN102612749B
(zh)
|
2009-11-06 |
2015-04-01 |
株式会社半导体能源研究所 |
半导体器件
|
|
WO2011055638A1
(en)
|
2009-11-06 |
2011-05-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
WO2011055631A1
(en)
|
2009-11-06 |
2011-05-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR102066532B1
(ko)
|
2009-11-06 |
2020-01-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102771839B1
(ko)
|
2009-11-13 |
2025-02-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
CN102612714B
(zh)
|
2009-11-13 |
2016-06-29 |
株式会社半导体能源研究所 |
半导体器件及其驱动方法
|
|
CN102668097B
(zh)
|
2009-11-13 |
2015-08-12 |
株式会社半导体能源研究所 |
半导体器件及其制造方法
|
|
WO2011058882A1
(en)
|
2009-11-13 |
2011-05-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Sputtering target and manufacturing method thereof, and transistor
|
|
WO2011058913A1
(en)
|
2009-11-13 |
2011-05-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR101721850B1
(ko)
|
2009-11-13 |
2017-03-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR20220116369A
(ko)
|
2009-11-13 |
2022-08-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 이 표시 장치를 구비한 전자 기기
|
|
KR101922849B1
(ko)
|
2009-11-20 |
2018-11-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
MY166309A
(en)
|
2009-11-20 |
2018-06-25 |
Semiconductor Energy Lab |
Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
|
|
KR20200096317A
(ko)
|
2009-11-20 |
2020-08-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
CN102598285B
(zh)
|
2009-11-20 |
2016-08-03 |
株式会社半导体能源研究所 |
用于制造半导体器件的方法
|
|
JP5762723B2
(ja)
|
2009-11-20 |
2015-08-12 |
株式会社半導体エネルギー研究所 |
変調回路及びそれを備えた半導体装置
|
|
KR20190109597A
(ko)
|
2009-11-20 |
2019-09-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
CN102640292B
(zh)
|
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2015-11-25 |
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|
|
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(ko)
|
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2018-06-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ko)
|
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2017-11-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ko)
|
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2020-01-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ko)
|
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2019-08-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
WO2011065230A1
(en)
|
2009-11-30 |
2011-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device, method for driving the same, and electronic device including the same
|
|
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(ko)
|
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2024-10-21 |
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반도체 장치
|
|
WO2011068022A1
(en)
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
CN102640272B
(zh)
|
2009-12-04 |
2015-05-20 |
株式会社半导体能源研究所 |
半导体装置及其制造方法
|
|
WO2011068025A1
(en)
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Dc converter circuit and power supply circuit
|
|
WO2011068066A1
(en)
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
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(ko)
|
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2015-05-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ko)
|
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2021-04-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
JP2011139052A
(ja)
|
2009-12-04 |
2011-07-14 |
Semiconductor Energy Lab Co Ltd |
半導体記憶装置
|
|
WO2011068028A1
(en)
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor element, semiconductor device, and method for manufacturing the same
|
|
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(ko)
|
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2012-09-26 |
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반도체 장치 및 그 제작 방법
|
|
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(ko)
|
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2019-02-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ko)
|
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2018-01-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
JP5727204B2
(ja)
|
2009-12-11 |
2015-06-03 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
WO2011070929A1
(en)
|
2009-12-11 |
2011-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
KR101481398B1
(ko)
|
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2015-01-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
래치 회로 및 cpu
|
|
WO2011070928A1
(en)
|
2009-12-11 |
2011-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2011074590A1
(en)
|
2009-12-17 |
2011-06-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, measurement apparatus, and measurement method of relative permittivity
|
|
CN102667910B
(zh)
|
2009-12-18 |
2015-11-25 |
株式会社半导体能源研究所 |
液晶显示设备和电子设备
|
|
US9057758B2
(en)
|
2009-12-18 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
|
|
EP2513966B1
(en)
|
2009-12-18 |
2020-09-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
CN104700890B
(zh)
|
2009-12-18 |
2017-10-17 |
株式会社半导体能源研究所 |
非易失性锁存电路和逻辑电路以及使用它们的半导体器件
|
|
WO2011074409A1
(en)
|
2009-12-18 |
2011-06-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
KR101763660B1
(ko)
|
2009-12-18 |
2017-08-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 그 구동 방법
|
|
WO2011074407A1
(en)
|
2009-12-18 |
2011-06-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR102020739B1
(ko)
|
2009-12-18 |
2019-09-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
광 센서를 포함하는 표시 장치 및 그 구동 방법
|
|
KR101822353B1
(ko)
|
2009-12-18 |
2018-01-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치의 구동 방법 및 표시 장치
|
|
CN105429621B
(zh)
|
2009-12-23 |
2019-03-19 |
株式会社半导体能源研究所 |
半导体装置
|
|
WO2011077926A1
(en)
|
2009-12-24 |
2011-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
|
WO2011077916A1
(en)
|
2009-12-24 |
2011-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
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(ko)
|
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2013-08-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ko)
|
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2018-07-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
메모리 장치, 반도체 장치, 및 전자 장치
|
|
EP3550604A1
(en)
|
2009-12-25 |
2019-10-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101613701B1
(ko)
|
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2016-04-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치의 구동 방법
|
|
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(ko)
|
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2018-06-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2011080998A1
(en)
|
2009-12-28 |
2011-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101872678B1
(ko)
|
2009-12-28 |
2018-07-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 전자 기기
|
|
CN102668098B
(zh)
|
2009-12-28 |
2015-07-22 |
株式会社半导体能源研究所 |
制造半导体装置的方法
|
|
CN102714184B
(zh)
|
2009-12-28 |
2016-05-18 |
株式会社半导体能源研究所 |
半导体器件
|
|
WO2011081041A1
(en)
|
2009-12-28 |
2011-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the semiconductor device
|
|
WO2011081000A1
(en)
|
2009-12-28 |
2011-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
|
US8780629B2
(en)
|
2010-01-15 |
2014-07-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
|
CN102725841B
(zh)
|
2010-01-15 |
2016-10-05 |
株式会社半导体能源研究所 |
半导体器件
|
|
WO2011086837A1
(en)
|
2010-01-15 |
2011-07-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
EP2524395A4
(en)
|
2010-01-15 |
2014-06-18 |
Semiconductor Energy Lab |
SEMICONDUCTOR COMPONENT AND CONTROL METHOD THEREFOR
|
|
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(ko)
|
2010-01-20 |
2018-05-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
KR101816505B1
(ko)
|
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2018-01-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치의 표시 방법
|
|
WO2011089849A1
(en)
|
2010-01-20 |
2011-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Portable electronic device
|
|
KR101842860B1
(ko)
|
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2018-03-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치의 구동 방법
|
|
US9984617B2
(en)
|
2010-01-20 |
2018-05-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device including light emitting element
|
|
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(ko)
|
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2018-04-23 |
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반도체 장치
|
|
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(zh)
|
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2016-05-04 |
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|
|
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(ko)
|
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|
|
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(ko)
|
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2019-10-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ko)
|
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2018-02-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ko)
|
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2018-04-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 제작 방법
|
|
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(zh)
|
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2016-03-11 |
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|
|
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(ko)
|
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2020-07-22 |
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|
|
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(ko)
|
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2017-12-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치와 이의 제조 방법
|
|
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(en)
|
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2011-08-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device including the same
|
|
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(en)
|
2010-01-29 |
2011-08-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2011096270A1
(en)
|
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2011-08-11 |
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|
|
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(ko)
|
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|
|
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(ko)
|
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|
|
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(ko)
|
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2019-03-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2011096153A1
(en)
|
2010-02-05 |
2011-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
US8947337B2
(en)
|
2010-02-11 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
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(ko)
|
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2018-02-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 구동 방법
|
|
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(zh)
|
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2015-11-25 |
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|
|
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(ko)
|
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2013-03-07 |
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|
|
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(ko)
|
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2023-10-17 |
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|
|
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(ko)
|
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반도체 장치
|
|
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(ko)
|
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2018-04-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ko)
|
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2018-02-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ko)
|
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2017-09-21 |
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|
|
WO2011102203A1
(en)
|
2010-02-19 |
2011-08-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and display device using the same
|
|
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(zh)
|
2010-02-19 |
2019-03-12 |
株式会社半导体能源研究所 |
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|
|
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(ko)
|
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2023-04-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
|
WO2011105184A1
(en)
|
2010-02-26 |
2011-09-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
WO2011105310A1
(en)
|
2010-02-26 |
2011-09-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9000438B2
(en)
|
2010-02-26 |
2015-04-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR102358272B1
(ko)
|
2010-02-26 |
2022-02-08 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치
|
|
KR20190000365A
(ko)
|
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2019-01-02 |
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|
|
DE112011106208B4
(de)
|
2010-03-02 |
2025-07-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Impulssignal-Ausgangsschaltung und Schieberegister
|
|
KR101838628B1
(ko)
|
2010-03-02 |
2018-03-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
펄스 신호 출력 회로 및 시프트 레지스터
|
|
WO2011108367A1
(en)
|
2010-03-02 |
2011-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Boosting circuit and rfid tag including boosting circuit
|
|
WO2011108374A1
(en)
|
2010-03-05 |
2011-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
KR101867272B1
(ko)
|
2010-03-05 |
2018-06-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치와 그의 제작 방법
|
|
KR101791253B1
(ko)
|
2010-03-08 |
2017-11-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
전자기기 및 전자 시스템
|
|
KR102220018B1
(ko)
|
2010-03-08 |
2021-02-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치를 제작하는 방법
|
|
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(ko)
|
2010-03-08 |
2018-09-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 구동 방법
|
|
KR101970469B1
(ko)
|
2010-03-08 |
2019-04-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
CN102782822B
(zh)
|
2010-03-08 |
2016-06-01 |
株式会社半导体能源研究所 |
半导体装置及半导体装置的制造方法
|
|
US8900362B2
(en)
|
2010-03-12 |
2014-12-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of gallium oxide single crystal
|
|
KR101840185B1
(ko)
|
2010-03-12 |
2018-03-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
회로를 구동하는 방법 및 표시 장치를 구동하는 방법
|
|
CN102822978B
(zh)
|
2010-03-12 |
2015-07-22 |
株式会社半导体能源研究所 |
半导体装置及其制造方法
|
|
WO2011111521A1
(en)
|
2010-03-12 |
2011-09-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of display device
|
|
KR101773992B1
(ko)
|
2010-03-12 |
2017-09-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
CN102812547B
(zh)
|
2010-03-19 |
2015-09-09 |
株式会社半导体能源研究所 |
半导体装置
|
|
US20110227082A1
(en)
|
2010-03-19 |
2011-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR101840797B1
(ko)
|
2010-03-19 |
2018-03-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 메모리 장치
|
|
KR101862539B1
(ko)
|
2010-03-26 |
2018-05-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101799757B1
(ko)
|
2010-03-26 |
2017-11-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치를 제작하는 방법
|
|
WO2011118741A1
(en)
|
2010-03-26 |
2011-09-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
WO2011122271A1
(en)
|
2010-03-31 |
2011-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Field-sequential display device
|
|
WO2011122299A1
(en)
|
2010-03-31 |
2011-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of liquid crystal display device
|
|
WO2011122514A1
(en)
|
2010-03-31 |
2011-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Power supply device and driving method thereof
|
|
US9147768B2
(en)
|
2010-04-02 |
2015-09-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having an oxide semiconductor and a metal oxide film
|
|
US9190522B2
(en)
|
2010-04-02 |
2015-11-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having an oxide semiconductor
|
|
US9196739B2
(en)
|
2010-04-02 |
2015-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including oxide semiconductor film and metal oxide film
|
|
US8884282B2
(en)
|
2010-04-02 |
2014-11-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR102292523B1
(ko)
|
2010-04-02 |
2021-08-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101391964B1
(ko)
|
2010-04-02 |
2014-05-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR101810592B1
(ko)
|
2010-04-07 |
2017-12-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터
|
|
WO2011125688A1
(en)
|
2010-04-09 |
2011-10-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and method for driving the same
|
|
US8653514B2
(en)
|
2010-04-09 |
2014-02-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2011125454A1
(en)
|
2010-04-09 |
2011-10-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8207025B2
(en)
|
2010-04-09 |
2012-06-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
US8854583B2
(en)
|
2010-04-12 |
2014-10-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and liquid crystal display device
|
|
WO2011129456A1
(en)
|
2010-04-16 |
2011-10-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Deposition method and method for manufacturing semiconductor device
|
|
WO2011129209A1
(en)
|
2010-04-16 |
2011-10-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Power source circuit
|
|
US8692243B2
(en)
|
2010-04-20 |
2014-04-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2011132625A1
(en)
|
2010-04-23 |
2011-10-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
US9537043B2
(en)
|
2010-04-23 |
2017-01-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Photoelectric conversion device and manufacturing method thereof
|
|
WO2011132555A1
(en)
|
2010-04-23 |
2011-10-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and driving method thereof
|
|
CN105321961B
(zh)
|
2010-04-23 |
2018-10-02 |
株式会社半导体能源研究所 |
半导体装置的制造方法
|
|
CN111326435B
(zh)
|
2010-04-23 |
2023-12-01 |
株式会社半导体能源研究所 |
半导体装置的制造方法
|
|
DE112011101410B4
(de)
|
2010-04-23 |
2018-03-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Verfahren zum Herstellen einer Halbleitervorrichtung
|
|
US9697788B2
(en)
|
2010-04-28 |
2017-07-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
|
WO2011136018A1
(en)
|
2010-04-28 |
2011-11-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and electronic appliance
|
|
US8890555B2
(en)
|
2010-04-28 |
2014-11-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for measuring transistor
|
|
WO2011135987A1
(en)
|
2010-04-28 |
2011-11-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
KR20220005640A
(ko)
|
2010-04-28 |
2022-01-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
US9349325B2
(en)
|
2010-04-28 |
2016-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and electronic device
|
|
US9478185B2
(en)
|
2010-05-12 |
2016-10-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Electro-optical display device and display method thereof
|
|
US9064473B2
(en)
|
2010-05-12 |
2015-06-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Electro-optical display device and display method thereof
|
|
TWI511236B
(zh)
|
2010-05-14 |
2015-12-01 |
Semiconductor Energy Lab |
半導體裝置
|
|
WO2011145738A1
(en)
|
2010-05-20 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving semiconductor device
|
|
US9496405B2
(en)
|
2010-05-20 |
2016-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
|
|
US9490368B2
(en)
|
2010-05-20 |
2016-11-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of the same
|
|
US8629438B2
(en)
|
2010-05-21 |
2014-01-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
WO2011145633A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP5766012B2
(ja)
|
2010-05-21 |
2015-08-19 |
株式会社半導体エネルギー研究所 |
液晶表示装置
|
|
WO2011145634A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2011145484A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2011145707A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device
|
|
WO2011145468A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
|
KR101808198B1
(ko)
|
2010-05-21 |
2017-12-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
|
KR20130082091A
(ko)
|
2010-05-21 |
2013-07-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
JP5714973B2
(ja)
|
2010-05-21 |
2015-05-07 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
WO2011145467A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP5852793B2
(ja)
|
2010-05-21 |
2016-02-03 |
株式会社半導体エネルギー研究所 |
液晶表示装置の作製方法
|
|
JP5749975B2
(ja)
|
2010-05-28 |
2015-07-15 |
株式会社半導体エネルギー研究所 |
光検出装置、及び、タッチパネル
|
|
US8895375B2
(en)
|
2010-06-01 |
2014-11-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Field effect transistor and method for manufacturing the same
|
|
WO2011152254A1
(en)
|
2010-06-04 |
2011-12-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2011152233A1
(en)
|
2010-06-04 |
2011-12-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2011155295A1
(en)
|
2010-06-10 |
2011-12-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Dc/dc converter, power supply circuit, and semiconductor device
|
|
US8610180B2
(en)
|
2010-06-11 |
2013-12-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Gas sensor and method for manufacturing the gas sensor
|
|
WO2011155302A1
(en)
|
2010-06-11 |
2011-12-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
DE112011101969B4
(de)
|
2010-06-11 |
2018-05-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung und Verfahren zum Herstellen derselben
|
|
JP5797471B2
(ja)
|
2010-06-16 |
2015-10-21 |
株式会社半導体エネルギー研究所 |
入出力装置
|
|
US9209314B2
(en)
|
2010-06-16 |
2015-12-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Field effect transistor
|
|
JP5823740B2
(ja)
|
2010-06-16 |
2015-11-25 |
株式会社半導体エネルギー研究所 |
入出力装置
|
|
US8552425B2
(en)
|
2010-06-18 |
2013-10-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8637802B2
(en)
|
2010-06-18 |
2014-01-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
|
|
WO2011158704A1
(en)
|
2010-06-18 |
2011-12-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
WO2011158703A1
(en)
|
2010-06-18 |
2011-12-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2011162104A1
(en)
|
2010-06-25 |
2011-12-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving the same
|
|
KR101746197B1
(ko)
|
2010-06-25 |
2017-06-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법 및 반도체 장치의 검사 방법
|
|
KR20120000499A
(ko)
|
2010-06-25 |
2012-01-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터 및 반도체 장치
|
|
WO2012002236A1
(en)
|
2010-06-29 |
2012-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Wiring board, semiconductor device, and manufacturing methods thereof
|
|
US9473714B2
(en)
|
2010-07-01 |
2016-10-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Solid-state imaging device and semiconductor display device
|
|
WO2012002040A1
(en)
|
2010-07-01 |
2012-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of liquid crystal display device
|
|
TWI541782B
(zh)
|
2010-07-02 |
2016-07-11 |
半導體能源研究所股份有限公司 |
液晶顯示裝置
|
|
US9336739B2
(en)
|
2010-07-02 |
2016-05-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
|
KR102220873B1
(ko)
|
2010-07-02 |
2021-02-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR20130090405A
(ko)
|
2010-07-02 |
2013-08-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치
|
|
KR102479939B1
(ko)
|
2010-07-02 |
2022-12-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
WO2012002186A1
(en)
|
2010-07-02 |
2012-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
CN103003934B
(zh)
|
2010-07-16 |
2015-07-01 |
株式会社半导体能源研究所 |
半导体器件
|
|
US8785241B2
(en)
|
2010-07-16 |
2014-07-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP5917035B2
(ja)
|
2010-07-26 |
2016-05-11 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR20180088759A
(ko)
|
2010-07-27 |
2018-08-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
WO2012014786A1
(en)
|
2010-07-30 |
2012-02-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semicondcutor device and manufacturing method thereof
|
|
US8928466B2
(en)
|
2010-08-04 |
2015-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8803164B2
(en)
|
2010-08-06 |
2014-08-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Solid-state image sensing device and semiconductor display device
|
|
CN107947763B
(zh)
|
2010-08-06 |
2021-12-28 |
株式会社半导体能源研究所 |
半导体集成电路
|
|
US8422272B2
(en)
|
2010-08-06 |
2013-04-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
|
US8792284B2
(en)
|
2010-08-06 |
2014-07-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor memory device
|
|
JP5743790B2
(ja)
|
2010-08-06 |
2015-07-01 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP5832181B2
(ja)
|
2010-08-06 |
2015-12-16 |
株式会社半導体エネルギー研究所 |
液晶表示装置
|
|
TWI688047B
(zh)
|
2010-08-06 |
2020-03-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
KR102006586B1
(ko)
|
2010-08-06 |
2019-08-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US8748224B2
(en)
|
2010-08-16 |
2014-06-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
JP5848912B2
(ja)
|
2010-08-16 |
2016-01-27 |
株式会社半導体エネルギー研究所 |
液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器
|
|
US9129703B2
(en)
|
2010-08-16 |
2015-09-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for driving semiconductor memory device
|
|
US9343480B2
(en)
|
2010-08-16 |
2016-05-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8883555B2
(en)
|
2010-08-25 |
2014-11-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Electronic device, manufacturing method of electronic device, and sputtering target
|
|
US8685787B2
(en)
|
2010-08-25 |
2014-04-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
US9058047B2
(en)
|
2010-08-26 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP2013009285A
(ja)
|
2010-08-26 |
2013-01-10 |
Semiconductor Energy Lab Co Ltd |
信号処理回路及びその駆動方法
|
|
JP5674594B2
(ja)
|
2010-08-27 |
2015-02-25 |
株式会社半導体エネルギー研究所 |
半導体装置及び半導体装置の駆動方法
|
|
KR102334169B1
(ko)
|
2010-08-27 |
2021-12-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
기억 장치, 반도체 장치
|
|
JP5763474B2
(ja)
|
2010-08-27 |
2015-08-12 |
株式会社半導体エネルギー研究所 |
光センサ
|
|
KR20130099074A
(ko)
|
2010-09-03 |
2013-09-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
스퍼터링 타겟 및 반도체 장치의 제작 방법
|
|
WO2012029596A1
(en)
|
2010-09-03 |
2012-03-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
KR20180105252A
(ko)
|
2010-09-03 |
2018-09-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
전계 효과 트랜지스터 및 반도체 장치의 제조 방법
|
|
US8797487B2
(en)
|
2010-09-10 |
2014-08-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, liquid crystal display device, and manufacturing method thereof
|
|
KR101824125B1
(ko)
|
2010-09-10 |
2018-02-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
US9142568B2
(en)
|
2010-09-10 |
2015-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing light-emitting display device
|
|
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(ko)
|
2010-09-10 |
2012-03-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 발광 장치
|
|
JP2012256821A
(ja)
|
2010-09-13 |
2012-12-27 |
Semiconductor Energy Lab Co Ltd |
記憶装置
|
|
KR101952235B1
(ko)
|
2010-09-13 |
2019-02-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
US8835917B2
(en)
|
2010-09-13 |
2014-09-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, power diode, and rectifier
|
|
KR101932576B1
(ko)
|
2010-09-13 |
2018-12-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
US8871565B2
(en)
|
2010-09-13 |
2014-10-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
US8647919B2
(en)
|
2010-09-13 |
2014-02-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting display device and method for manufacturing the same
|
|
US8664097B2
(en)
|
2010-09-13 |
2014-03-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
US8592879B2
(en)
|
2010-09-13 |
2013-11-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
JP5815337B2
(ja)
|
2010-09-13 |
2015-11-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9546416B2
(en)
|
2010-09-13 |
2017-01-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of forming crystalline oxide semiconductor film
|
|
US8558960B2
(en)
|
2010-09-13 |
2013-10-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and method for manufacturing the same
|
|
US9496743B2
(en)
|
2010-09-13 |
2016-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Power receiving device and wireless power feed system
|
|
TWI543166B
(zh)
|
2010-09-13 |
2016-07-21 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
TWI539453B
(zh)
|
2010-09-14 |
2016-06-21 |
半導體能源研究所股份有限公司 |
記憶體裝置和半導體裝置
|
|
JP2012256012A
(ja)
|
2010-09-15 |
2012-12-27 |
Semiconductor Energy Lab Co Ltd |
表示装置
|
|
KR101426515B1
(ko)
|
2010-09-15 |
2014-08-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 표시 장치
|
|
US9230994B2
(en)
|
2010-09-15 |
2016-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
|
KR101856722B1
(ko)
|
2010-09-22 |
2018-05-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
파워 절연 게이트형 전계 효과 트랜지스터
|
|
TWI574259B
(zh)
|
2010-09-29 |
2017-03-11 |
半導體能源研究所股份有限公司 |
半導體記憶體裝置和其驅動方法
|
|
TWI556317B
(zh)
|
2010-10-07 |
2016-11-01 |
半導體能源研究所股份有限公司 |
薄膜元件、半導體裝置以及它們的製造方法
|
|
US8679986B2
(en)
|
2010-10-14 |
2014-03-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing display device
|
|
US8803143B2
(en)
|
2010-10-20 |
2014-08-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor including buffer layers with high resistivity
|
|
KR101924231B1
(ko)
|
2010-10-29 |
2018-11-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 기억 장치
|
|
KR101952456B1
(ko)
|
2010-10-29 |
2019-02-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
기억 장치
|
|
CN103313993A
(zh)
|
2010-11-02 |
2013-09-18 |
宇部兴产株式会社 |
(酰胺氨基烷烃)金属化合物及使用所述金属化合物制备含金属的薄膜的方法
|
|
US8916866B2
(en)
|
2010-11-03 |
2014-12-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR102130257B1
(ko)
|
2010-11-05 |
2020-07-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
TWI555205B
(zh)
|
2010-11-05 |
2016-10-21 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的製造方法
|
|
US9087744B2
(en)
|
2010-11-05 |
2015-07-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving transistor
|
|
US8957468B2
(en)
|
2010-11-05 |
2015-02-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Variable capacitor and liquid crystal display device
|
|
JP6010291B2
(ja)
|
2010-11-05 |
2016-10-19 |
株式会社半導体エネルギー研究所 |
表示装置の駆動方法
|
|
US8569754B2
(en)
|
2010-11-05 |
2013-10-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US8902637B2
(en)
|
2010-11-08 |
2014-12-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
|
|
TWI654764B
(zh)
|
2010-11-11 |
2019-03-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
JP5770068B2
(ja)
|
2010-11-12 |
2015-08-26 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US8854865B2
(en)
|
2010-11-24 |
2014-10-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
|
US8936965B2
(en)
|
2010-11-26 |
2015-01-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9103724B2
(en)
|
2010-11-30 |
2015-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
|
|
TWI562379B
(en)
|
2010-11-30 |
2016-12-11 |
Semiconductor Energy Lab Co Ltd |
Semiconductor device and method for manufacturing semiconductor device
|
|
US8816425B2
(en)
|
2010-11-30 |
2014-08-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US8823092B2
(en)
|
2010-11-30 |
2014-09-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
TWI590249B
(zh)
|
2010-12-03 |
2017-07-01 |
半導體能源研究所股份有限公司 |
積體電路，其驅動方法，及半導體裝置
|
|
JP5908263B2
(ja)
|
2010-12-03 |
2016-04-26 |
株式会社半導体エネルギー研究所 |
Ｄｃ−ｄｃコンバータ
|
|
KR102505248B1
(ko)
|
2010-12-03 |
2023-03-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막 및 반도체 장치
|
|
US8957462B2
(en)
|
2010-12-09 |
2015-02-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
|
|
JP2012256020A
(ja)
|
2010-12-15 |
2012-12-27 |
Semiconductor Energy Lab Co Ltd |
半導体装置及びその駆動方法
|
|
US8894825B2
(en)
|
2010-12-17 |
2014-11-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Sputtering target, method for manufacturing the same, manufacturing semiconductor device
|
|
JP2012142562A
(ja)
|
2010-12-17 |
2012-07-26 |
Semiconductor Energy Lab Co Ltd |
半導体記憶装置
|
|
US9202822B2
(en)
|
2010-12-17 |
2015-12-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9024317B2
(en)
|
2010-12-24 |
2015-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
|
|
JP2012151453A
(ja)
|
2010-12-28 |
2012-08-09 |
Semiconductor Energy Lab Co Ltd |
半導体装置および半導体装置の駆動方法
|
|
JP5973165B2
(ja)
|
2010-12-28 |
2016-08-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP5784479B2
(ja)
|
2010-12-28 |
2015-09-24 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6030298B2
(ja)
|
2010-12-28 |
2016-11-24 |
株式会社半導体エネルギー研究所 |
緩衝記憶装置及び信号処理回路
|
|
JP5864054B2
(ja)
|
2010-12-28 |
2016-02-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US8829512B2
(en)
|
2010-12-28 |
2014-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2012090799A1
(en)
|
2010-12-28 |
2012-07-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US9443984B2
(en)
|
2010-12-28 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9048142B2
(en)
|
2010-12-28 |
2015-06-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8883556B2
(en)
|
2010-12-28 |
2014-11-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9911858B2
(en)
|
2010-12-28 |
2018-03-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI525614B
(zh)
|
2011-01-05 |
2016-03-11 |
半導體能源研究所股份有限公司 |
儲存元件、儲存裝置、及信號處理電路
|
|
TWI535032B
(zh)
|
2011-01-12 |
2016-05-21 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
|
US8536571B2
(en)
|
2011-01-12 |
2013-09-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
JP5982125B2
(ja)
|
2011-01-12 |
2016-08-31 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
TWI570809B
(zh)
|
2011-01-12 |
2017-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
US8921948B2
(en)
|
2011-01-12 |
2014-12-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
TWI572009B
(zh)
|
2011-01-14 |
2017-02-21 |
半導體能源研究所股份有限公司 |
半導體記憶裝置
|
|
KR102026718B1
(ko)
|
2011-01-14 |
2019-09-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
기억장치, 반도체 장치, 검출 방법
|
|
US8916867B2
(en)
|
2011-01-20 |
2014-12-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor element and semiconductor device
|
|
TWI570920B
(zh)
|
2011-01-26 |
2017-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
WO2012102183A1
(en)
|
2011-01-26 |
2012-08-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
TWI614747B
(zh)
|
2011-01-26 |
2018-02-11 |
半導體能源研究所股份有限公司 |
記憶體裝置及半導體裝置
|
|
TWI657580B
(zh)
|
2011-01-26 |
2019-04-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
TWI602303B
(zh)
|
2011-01-26 |
2017-10-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
WO2012102181A1
(en)
|
2011-01-27 |
2012-08-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI525619B
(zh)
|
2011-01-27 |
2016-03-11 |
半導體能源研究所股份有限公司 |
記憶體電路
|
|
WO2012102281A1
(en)
|
2011-01-28 |
2012-08-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9494829B2
(en)
|
2011-01-28 |
2016-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and liquid crystal display device containing the same
|
|
WO2012102314A1
(en)
|
2011-01-28 |
2012-08-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device and semiconductor device
|
|
US9799773B2
(en)
|
2011-02-02 |
2017-10-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and semiconductor device
|
|
US9431400B2
(en)
|
2011-02-08 |
2016-08-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and method for manufacturing the same
|
|
US8787083B2
(en)
|
2011-02-10 |
2014-07-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory circuit
|
|
TWI569041B
(zh)
|
2011-02-14 |
2017-02-01 |
半導體能源研究所股份有限公司 |
顯示裝置
|
|
KR101899880B1
(ko)
|
2011-02-17 |
2018-09-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
프로그래머블 ｌｓｉ
|
|
US8975680B2
(en)
|
2011-02-17 |
2015-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and method manufacturing semiconductor memory device
|
|
US9443455B2
(en)
|
2011-02-25 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device having a plurality of pixels
|
|
US9691772B2
(en)
|
2011-03-03 |
2017-06-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device including memory cell which includes transistor and capacitor
|
|
US8841664B2
(en)
|
2011-03-04 |
2014-09-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP5898527B2
(ja)
|
2011-03-04 |
2016-04-06 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9023684B2
(en)
|
2011-03-04 |
2015-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9646829B2
(en)
|
2011-03-04 |
2017-05-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
US8659015B2
(en)
|
2011-03-04 |
2014-02-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP5827145B2
(ja)
|
2011-03-08 |
2015-12-02 |
株式会社半導体エネルギー研究所 |
信号処理回路
|
|
US9099437B2
(en)
|
2011-03-08 |
2015-08-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8541781B2
(en)
|
2011-03-10 |
2013-09-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
WO2012121265A1
(en)
|
2011-03-10 |
2012-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and method for manufacturing the same
|
|
TWI624878B
(zh)
|
2011-03-11 |
2018-05-21 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
|
JP2012209543A
(ja)
|
2011-03-11 |
2012-10-25 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
US8760903B2
(en)
|
2011-03-11 |
2014-06-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Storage circuit
|
|
JP5933897B2
(ja)
|
2011-03-18 |
2016-06-15 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR101995682B1
(ko)
|
2011-03-18 |
2019-07-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법
|
|
US8859330B2
(en)
|
2011-03-23 |
2014-10-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
JP5839474B2
(ja)
|
2011-03-24 |
2016-01-06 |
株式会社半導体エネルギー研究所 |
信号処理回路
|
|
TWI545652B
(zh)
|
2011-03-25 |
2016-08-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
US8987728B2
(en)
|
2011-03-25 |
2015-03-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of manufacturing semiconductor device
|
|
US9219159B2
(en)
|
2011-03-25 |
2015-12-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming oxide semiconductor film and method for manufacturing semiconductor device
|
|
US9012904B2
(en)
|
2011-03-25 |
2015-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US8686416B2
(en)
|
2011-03-25 |
2014-04-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film and semiconductor device
|
|
US8956944B2
(en)
|
2011-03-25 |
2015-02-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI597842B
(zh)
|
2011-03-25 |
2017-09-01 |
半導體能源研究所股份有限公司 |
場效電晶體及包含該場效電晶體之記憶體與半導體電路
|
|
JP6053098B2
(ja)
|
2011-03-28 |
2016-12-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US8927329B2
(en)
|
2011-03-30 |
2015-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing oxide semiconductor device with improved electronic properties
|
|
JP5879165B2
(ja)
|
2011-03-30 |
2016-03-08 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI567735B
(zh)
|
2011-03-31 |
2017-01-21 |
半導體能源研究所股份有限公司 |
記憶體電路，記憶體單元，及訊號處理電路
|
|
US8686486B2
(en)
|
2011-03-31 |
2014-04-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device
|
|
US9082860B2
(en)
|
2011-03-31 |
2015-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP5982147B2
(ja)
|
2011-04-01 |
2016-08-31 |
株式会社半導体エネルギー研究所 |
発光装置
|
|
US9960278B2
(en)
|
2011-04-06 |
2018-05-01 |
Yuhei Sato |
Manufacturing method of semiconductor device
|
|
US9012905B2
(en)
|
2011-04-08 |
2015-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
|
|
US9093538B2
(en)
|
2011-04-08 |
2015-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US9142320B2
(en)
|
2011-04-08 |
2015-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory element and signal processing circuit
|
|
US9478668B2
(en)
|
2011-04-13 |
2016-10-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film and semiconductor device
|
|
US8854867B2
(en)
|
2011-04-13 |
2014-10-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and driving method of the memory device
|
|
JP6045176B2
(ja)
|
2011-04-15 |
2016-12-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US8779488B2
(en)
|
2011-04-15 |
2014-07-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
|
US9070776B2
(en)
|
2011-04-15 |
2015-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
|
US8878174B2
(en)
|
2011-04-15 |
2014-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
|
|
JP6001900B2
(ja)
|
2011-04-21 |
2016-10-05 |
株式会社半導体エネルギー研究所 |
信号処理回路
|
|
US8878288B2
(en)
|
2011-04-22 |
2014-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8916868B2
(en)
|
2011-04-22 |
2014-12-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
US9006803B2
(en)
|
2011-04-22 |
2015-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing thereof
|
|
TWI548057B
(zh)
|
2011-04-22 |
2016-09-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9331206B2
(en)
|
2011-04-22 |
2016-05-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide material and semiconductor device
|
|
US8809854B2
(en)
|
2011-04-22 |
2014-08-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP5946683B2
(ja)
|
2011-04-22 |
2016-07-06 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US10079053B2
(en)
|
2011-04-22 |
2018-09-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory element and memory device
|
|
US8932913B2
(en)
|
2011-04-22 |
2015-01-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
CN105931967B
(zh)
|
2011-04-27 |
2019-05-03 |
株式会社半导体能源研究所 |
半导体装置的制造方法
|
|
KR101919056B1
(ko)
|
2011-04-28 |
2018-11-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 회로
|
|
US9935622B2
(en)
|
2011-04-28 |
2018-04-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Comparator and semiconductor device including comparator
|
|
US9111795B2
(en)
|
2011-04-29 |
2015-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device with capacitor connected to memory element through oxide semiconductor film
|
|
TWI525615B
(zh)
|
2011-04-29 |
2016-03-11 |
半導體能源研究所股份有限公司 |
半導體儲存裝置
|
|
KR101963457B1
(ko)
|
2011-04-29 |
2019-03-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 기억 장치 및 그 구동 방법
|
|
US8848464B2
(en)
|
2011-04-29 |
2014-09-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of driving semiconductor device
|
|
US9614094B2
(en)
|
2011-04-29 |
2017-04-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including oxide semiconductor layer and method for driving the same
|
|
US8476927B2
(en)
|
2011-04-29 |
2013-07-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Programmable logic device
|
|
TWI550865B
(zh)
|
2011-05-05 |
2016-09-21 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
US9117701B2
(en)
|
2011-05-06 |
2015-08-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI568181B
(zh)
|
2011-05-06 |
2017-01-21 |
半導體能源研究所股份有限公司 |
邏輯電路及半導體裝置
|
|
US9443844B2
(en)
|
2011-05-10 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Gain cell semiconductor memory device and driving method thereof
|
|
TWI541978B
(zh)
|
2011-05-11 |
2016-07-11 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置之驅動方法
|
|
US8946066B2
(en)
|
2011-05-11 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
|
TWI557711B
(zh)
|
2011-05-12 |
2016-11-11 |
半導體能源研究所股份有限公司 |
顯示裝置的驅動方法
|
|
US8847233B2
(en)
|
2011-05-12 |
2014-09-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
|
|
US9466618B2
(en)
|
2011-05-13 |
2016-10-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including two thin film transistors and method of manufacturing the same
|
|
US9397222B2
(en)
|
2011-05-13 |
2016-07-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
|
US9105749B2
(en)
|
2011-05-13 |
2015-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP5886128B2
(ja)
|
2011-05-13 |
2016-03-16 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6109489B2
(ja)
|
2011-05-13 |
2017-04-05 |
株式会社半導体エネルギー研究所 |
Ｅｌ表示装置
|
|
US9093539B2
(en)
|
2011-05-13 |
2015-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US9048788B2
(en)
|
2011-05-13 |
2015-06-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising a photoelectric conversion portion
|
|
JP6013773B2
(ja)
|
2011-05-13 |
2016-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR101946360B1
(ko)
|
2011-05-16 |
2019-02-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
프로그래머블 로직 디바이스
|
|
TWI570891B
(zh)
|
2011-05-17 |
2017-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9673823B2
(en)
|
2011-05-18 |
2017-06-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of driving semiconductor device
|
|
US8581625B2
(en)
|
2011-05-19 |
2013-11-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Programmable logic device
|
|
US8779799B2
(en)
|
2011-05-19 |
2014-07-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit
|
|
KR102093909B1
(ko)
|
2011-05-19 |
2020-03-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
회로 및 회로의 구동 방법
|
|
KR101991735B1
(ko)
|
2011-05-19 |
2019-06-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 집적 회로
|
|
KR102081792B1
(ko)
|
2011-05-19 |
2020-02-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
연산회로 및 연산회로의 구동방법
|
|
JP6006975B2
(ja)
|
2011-05-19 |
2016-10-12 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US8709889B2
(en)
|
2011-05-19 |
2014-04-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and manufacturing method thereof
|
|
US8837203B2
(en)
|
2011-05-19 |
2014-09-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
CN102789808B
(zh)
|
2011-05-20 |
2018-03-06 |
株式会社半导体能源研究所 |
存储器装置和用于驱动存储器装置的方法
|
|
TWI573136B
(zh)
|
2011-05-20 |
2017-03-01 |
半導體能源研究所股份有限公司 |
儲存裝置及信號處理電路
|
|
JP6091083B2
(ja)
|
2011-05-20 |
2017-03-08 |
株式会社半導体エネルギー研究所 |
記憶装置
|
|
JP5936908B2
(ja)
|
2011-05-20 |
2016-06-22 |
株式会社半導体エネルギー研究所 |
パリティビット出力回路およびパリティチェック回路
|
|
JP5951351B2
(ja)
|
2011-05-20 |
2016-07-13 |
株式会社半導体エネルギー研究所 |
加算器及び全加算器
|
|
TWI559683B
(zh)
|
2011-05-20 |
2016-11-21 |
半導體能源研究所股份有限公司 |
半導體積體電路
|
|
TWI614995B
(zh)
|
2011-05-20 |
2018-02-11 |
半導體能源研究所股份有限公司 |
鎖相迴路及使用此鎖相迴路之半導體裝置
|
|
JP6030334B2
(ja)
|
2011-05-20 |
2016-11-24 |
株式会社半導体エネルギー研究所 |
記憶装置
|
|
JP5947099B2
(ja)
|
2011-05-20 |
2016-07-06 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
WO2012160963A1
(en)
|
2011-05-20 |
2012-11-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI570719B
(zh)
|
2011-05-20 |
2017-02-11 |
半導體能源研究所股份有限公司 |
儲存裝置及信號處理電路
|
|
JP6013680B2
(ja)
|
2011-05-20 |
2016-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI570730B
(zh)
|
2011-05-20 |
2017-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
JP5886496B2
(ja)
|
2011-05-20 |
2016-03-16 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US20120298998A1
(en)
|
2011-05-25 |
2012-11-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
|
|
US9171840B2
(en)
|
2011-05-26 |
2015-10-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9467047B2
(en)
|
2011-05-31 |
2016-10-11 |
Semiconductor Energy Laboratory Co., Ltd. |
DC-DC converter, power source circuit, and semiconductor device
|
|
US8669781B2
(en)
|
2011-05-31 |
2014-03-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP5912844B2
(ja)
|
2011-05-31 |
2016-04-27 |
株式会社半導体エネルギー研究所 |
プログラマブルロジックデバイス
|
|
JP5890251B2
(ja)
|
2011-06-08 |
2016-03-22 |
株式会社半導体エネルギー研究所 |
通信方法
|
|
WO2012169449A1
(en)
|
2011-06-08 |
2012-12-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Sputtering target, method for manufacturing sputtering target, and method for forming thin film
|
|
JP2013016243A
(ja)
|
2011-06-09 |
2013-01-24 |
Semiconductor Energy Lab Co Ltd |
記憶装置
|
|
US8891285B2
(en)
|
2011-06-10 |
2014-11-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
|
JP6005401B2
(ja)
|
2011-06-10 |
2016-10-12 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US8958263B2
(en)
|
2011-06-10 |
2015-02-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6104522B2
(ja)
|
2011-06-10 |
2017-03-29 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9112036B2
(en)
|
2011-06-10 |
2015-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
US9299852B2
(en)
|
2011-06-16 |
2016-03-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US9166055B2
(en)
|
2011-06-17 |
2015-10-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US8901554B2
(en)
|
2011-06-17 |
2014-12-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including channel formation region including oxide semiconductor
|
|
KR20130007426A
(ko)
|
2011-06-17 |
2013-01-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
KR20140024866A
(ko)
|
2011-06-17 |
2014-03-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그의 제조 방법
|
|
US9099885B2
(en)
|
2011-06-17 |
2015-08-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Wireless power feeding system
|
|
US8673426B2
(en)
|
2011-06-29 |
2014-03-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
|
|
US8878589B2
(en)
|
2011-06-30 |
2014-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
|
WO2013005380A1
(en)
|
2011-07-01 |
2013-01-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9385238B2
(en)
|
2011-07-08 |
2016-07-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor using oxide semiconductor
|
|
US9214474B2
(en)
|
2011-07-08 |
2015-12-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
US8952377B2
(en)
|
2011-07-08 |
2015-02-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9490241B2
(en)
|
2011-07-08 |
2016-11-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising a first inverter and a second inverter
|
|
TWI565067B
(zh)
|
2011-07-08 |
2017-01-01 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
US9496138B2
(en)
|
2011-07-08 |
2016-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
|
|
US8836626B2
(en)
|
2011-07-15 |
2014-09-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving the same
|
|
US9200952B2
(en)
|
2011-07-15 |
2015-12-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising a photodetector and an analog arithmetic circuit
|
|
JP2013042117A
(ja)
|
2011-07-15 |
2013-02-28 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
US8847220B2
(en)
|
2011-07-15 |
2014-09-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8946812B2
(en)
|
2011-07-21 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP6013685B2
(ja)
|
2011-07-22 |
2016-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
DE112012003074T5
(de)
|
2011-07-22 |
2014-04-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Lichtemissionsvorrichtung
|
|
US8716073B2
(en)
|
2011-07-22 |
2014-05-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for processing oxide semiconductor film and method for manufacturing semiconductor device
|
|
US9012993B2
(en)
|
2011-07-22 |
2015-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8994019B2
(en)
|
2011-08-05 |
2015-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6006572B2
(ja)
|
2011-08-18 |
2016-10-12 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6128775B2
(ja)
|
2011-08-19 |
2017-05-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI575494B
(zh)
|
2011-08-19 |
2017-03-21 |
半導體能源研究所股份有限公司 |
半導體裝置的驅動方法
|
|
JP6116149B2
(ja)
|
2011-08-24 |
2017-04-19 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI621243B
(zh)
|
2011-08-29 |
2018-04-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9660092B2
(en)
|
2011-08-31 |
2017-05-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor thin film transistor including oxygen release layer
|
|
US9252279B2
(en)
|
2011-08-31 |
2016-02-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP6016532B2
(ja)
|
2011-09-07 |
2016-10-26 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6050054B2
(ja)
|
2011-09-09 |
2016-12-21 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US8802493B2
(en)
|
2011-09-13 |
2014-08-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of oxide semiconductor device
|
|
JP5825744B2
(ja)
|
2011-09-15 |
2015-12-02 |
株式会社半導体エネルギー研究所 |
パワー絶縁ゲート型電界効果トランジスタ
|
|
WO2013039126A1
(en)
|
2011-09-16 |
2013-03-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP5832399B2
(ja)
|
2011-09-16 |
2015-12-16 |
株式会社半導体エネルギー研究所 |
発光装置
|
|
US8952379B2
(en)
|
2011-09-16 |
2015-02-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9082663B2
(en)
|
2011-09-16 |
2015-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
CN103022012B
(zh)
|
2011-09-21 |
2017-03-01 |
株式会社半导体能源研究所 |
半导体存储装置
|
|
KR101976228B1
(ko)
|
2011-09-22 |
2019-05-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
광 검출 장치 및 광 검출 장치의 구동 방법
|
|
WO2013042562A1
(en)
|
2011-09-22 |
2013-03-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8841675B2
(en)
|
2011-09-23 |
2014-09-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Minute transistor
|
|
US9431545B2
(en)
|
2011-09-23 |
2016-08-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR102108572B1
(ko)
|
2011-09-26 |
2020-05-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
JP2013084333A
(ja)
|
2011-09-28 |
2013-05-09 |
Semiconductor Energy Lab Co Ltd |
シフトレジスタ回路
|
|
KR101506303B1
(ko)
|
2011-09-29 |
2015-03-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 및 반도체 장치의 제작 방법
|
|
TWI605590B
(zh)
|
2011-09-29 |
2017-11-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
KR20140056392A
(ko)
|
2011-09-29 |
2014-05-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102304125B1
(ko)
|
2011-09-29 |
2021-09-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
JP5806905B2
(ja)
|
2011-09-30 |
2015-11-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US8982607B2
(en)
|
2011-09-30 |
2015-03-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory element and signal processing circuit
|
|
US20130087784A1
(en)
|
2011-10-05 |
2013-04-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP6022880B2
(ja)
|
2011-10-07 |
2016-11-09 |
株式会社半導体エネルギー研究所 |
半導体装置及び半導体装置の作製方法
|
|
US10014068B2
(en)
|
2011-10-07 |
2018-07-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP2013093561A
(ja)
|
2011-10-07 |
2013-05-16 |
Semiconductor Energy Lab Co Ltd |
酸化物半導体膜及び半導体装置
|
|
US8637864B2
(en)
|
2011-10-13 |
2014-01-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of manufacturing the same
|
|
US9117916B2
(en)
|
2011-10-13 |
2015-08-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising oxide semiconductor film
|
|
US9018629B2
(en)
|
2011-10-13 |
2015-04-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
JP6026839B2
(ja)
|
2011-10-13 |
2016-11-16 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP5912394B2
(ja)
|
2011-10-13 |
2016-04-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9287405B2
(en)
|
2011-10-13 |
2016-03-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising oxide semiconductor
|
|
IN2014DN03274A
(en:Method)
|
2011-10-14 |
2015-05-22 |
Semiconductor Energy Lab |
|
|
KR20130040706A
(ko)
|
2011-10-14 |
2013-04-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
KR20130043063A
(ko)
|
2011-10-19 |
2013-04-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
TWI567985B
(zh)
|
2011-10-21 |
2017-01-21 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
KR102067051B1
(ko)
|
2011-10-24 |
2020-01-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
JP6226518B2
(ja)
|
2011-10-24 |
2017-11-08 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR101976212B1
(ko)
|
2011-10-24 |
2019-05-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
KR20130046357A
(ko)
|
2011-10-27 |
2013-05-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
JP6082562B2
(ja)
|
2011-10-27 |
2017-02-15 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR20140086954A
(ko)
|
2011-10-28 |
2014-07-08 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
JP5933895B2
(ja)
|
2011-11-10 |
2016-06-15 |
株式会社半導体エネルギー研究所 |
半導体装置および半導体装置の作製方法
|
|
US9082861B2
(en)
|
2011-11-11 |
2015-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor with oxide semiconductor channel having protective layer
|
|
JP6122275B2
(ja)
|
2011-11-11 |
2017-04-26 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
US8878177B2
(en)
|
2011-11-11 |
2014-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
JP6076038B2
(ja)
|
2011-11-11 |
2017-02-08 |
株式会社半導体エネルギー研究所 |
表示装置の作製方法
|
|
CN103918025B
(zh)
|
2011-11-11 |
2016-12-21 |
株式会社半导体能源研究所 |
信号线驱动电路以及液晶显示装置
|
|
US8796682B2
(en)
|
2011-11-11 |
2014-08-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a semiconductor device
|
|
US8969130B2
(en)
|
2011-11-18 |
2015-03-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
|
|
US10026847B2
(en)
|
2011-11-18 |
2018-07-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element
|
|
JP6099368B2
(ja)
|
2011-11-25 |
2017-03-22 |
株式会社半導体エネルギー研究所 |
記憶装置
|
|
US8951899B2
(en)
|
2011-11-25 |
2015-02-10 |
Semiconductor Energy Laboratory |
Method for manufacturing semiconductor device
|
|
US8962386B2
(en)
|
2011-11-25 |
2015-02-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US8829528B2
(en)
|
2011-11-25 |
2014-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including groove portion extending beyond pixel electrode
|
|
US9057126B2
(en)
|
2011-11-29 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing sputtering target and method for manufacturing semiconductor device
|
|
KR102072244B1
(ko)
|
2011-11-30 |
2020-01-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
TWI639150B
(zh)
|
2011-11-30 |
2018-10-21 |
日商半導體能源研究所股份有限公司 |
半導體顯示裝置
|
|
TWI669760B
(zh)
|
2011-11-30 |
2019-08-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
|
US9076871B2
(en)
|
2011-11-30 |
2015-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
CN103137701B
(zh)
|
2011-11-30 |
2018-01-19 |
株式会社半导体能源研究所 |
晶体管及半导体装置
|
|
US20130137232A1
(en)
|
2011-11-30 |
2013-05-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming oxide semiconductor film and method for manufacturing semiconductor device
|
|
US8981367B2
(en)
|
2011-12-01 |
2015-03-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI621183B
(zh)
|
2011-12-01 |
2018-04-11 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的製造方法
|
|
KR20140101817A
(ko)
|
2011-12-02 |
2014-08-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
JP2013137853A
(ja)
|
2011-12-02 |
2013-07-11 |
Semiconductor Energy Lab Co Ltd |
記憶装置および記憶装置の駆動方法
|
|
JP6050662B2
(ja)
|
2011-12-02 |
2016-12-21 |
株式会社半導体エネルギー研究所 |
半導体装置及び半導体装置の作製方法
|
|
US9257422B2
(en)
|
2011-12-06 |
2016-02-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Signal processing circuit and method for driving signal processing circuit
|
|
US9076505B2
(en)
|
2011-12-09 |
2015-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device
|
|
US10002968B2
(en)
|
2011-12-14 |
2018-06-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the same
|
|
WO2013089115A1
(en)
|
2011-12-15 |
2013-06-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP6105266B2
(ja)
|
2011-12-15 |
2017-03-29 |
株式会社半導体エネルギー研究所 |
記憶装置
|
|
JP2013149953A
(ja)
|
2011-12-20 |
2013-08-01 |
Semiconductor Energy Lab Co Ltd |
半導体装置及び半導体装置の作製方法
|
|
US8785258B2
(en)
|
2011-12-20 |
2014-07-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
US8907392B2
(en)
|
2011-12-22 |
2014-12-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device including stacked sub memory cells
|
|
US8748240B2
(en)
|
2011-12-22 |
2014-06-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
TWI569446B
(zh)
|
2011-12-23 |
2017-02-01 |
半導體能源研究所股份有限公司 |
半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置
|
|
TWI580047B
(zh)
|
2011-12-23 |
2017-04-21 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
WO2013094547A1
(en)
|
2011-12-23 |
2013-06-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI580189B
(zh)
|
2011-12-23 |
2017-04-21 |
半導體能源研究所股份有限公司 |
位準位移電路及半導體積體電路
|
|
JP6053490B2
(ja)
|
2011-12-23 |
2016-12-27 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
JP6033071B2
(ja)
|
2011-12-23 |
2016-11-30 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6012450B2
(ja)
|
2011-12-23 |
2016-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置の駆動方法
|
|
WO2013099537A1
(en)
|
2011-12-26 |
2013-07-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Motion recognition device
|
|
KR102100425B1
(ko)
|
2011-12-27 |
2020-04-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
KR102103913B1
(ko)
|
2012-01-10 |
2020-04-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
|
US8969867B2
(en)
|
2012-01-18 |
2015-03-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US8836555B2
(en)
|
2012-01-18 |
2014-09-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Circuit, sensor circuit, and semiconductor device using the sensor circuit
|
|
US9099560B2
(en)
|
2012-01-20 |
2015-08-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9040981B2
(en)
|
2012-01-20 |
2015-05-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US20130187150A1
(en)
|
2012-01-20 |
2013-07-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9653614B2
(en)
|
2012-01-23 |
2017-05-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR102147870B1
(ko)
|
2012-01-23 |
2020-08-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR102412138B1
(ko)
|
2012-01-25 |
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가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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|
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|
|
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(en)
|
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|
|
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(en)
|
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|
|
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(zh)
|
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|
|
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(ja)
|
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|
|
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(en)
|
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|
|
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(zh)
|
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|
|
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(en)
|
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|
|
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(ko)
|
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|
|
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|
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|
|
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(en)
|
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|
|
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|
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|
|
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(en)
|
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|
|
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(ja)
|
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|
|
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(ja)
|
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|
|
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(en)
|
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|
|
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|
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|
|
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(en)
|
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|
|
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(ja)
|
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|
|
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|
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|
|
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(ja)
|
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|
|
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(en)
|
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|
|
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(ja)
|
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|
|
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(ja)
|
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|
|
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(en)
|
2012-03-01 |
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|
|
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(en)
|
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2015-11-03 |
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|
|
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(en)
|
2012-03-02 |
2017-08-15 |
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|
|
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(en)
|
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|
|
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(ja)
|
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|
|
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(en)
|
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2015-03-31 |
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|
|
US8981370B2
(en)
|
2012-03-08 |
2015-03-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
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(zh)
|
2012-03-09 |
2017-09-15 |
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|
|
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(zh)
|
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|
|
US9117409B2
(en)
|
2012-03-14 |
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|
|
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(ja)
|
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|
|
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(en)
|
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|
|
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(ko)
|
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|
|
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(en)
|
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Semiconductor Energy Laboratory Co., Ltd. |
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|
|
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(en)
|
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2016-04-26 |
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|
|
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(en)
|
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2016-05-24 |
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|
|
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(ja)
|
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|
|
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(ko)
|
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|
|
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(ja)
|
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2017-05-31 |
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|
|
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(ja)
|
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Semiconductor Energy Lab Co Ltd |
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|
|
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(en)
|
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2017-10-10 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
US8941113B2
(en)
|
2012-03-30 |
2015-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
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(en)
|
2012-04-05 |
2015-04-07 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
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(ja)
|
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|
|
US9793444B2
(en)
|
2012-04-06 |
2017-10-17 |
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|
|
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(en)
|
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2017-07-18 |
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|
|
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(en)
|
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Semiconductor Energy Laboratory Co., Ltd. |
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|
|
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(ja)
|
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|
|
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(ja)
|
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|
|
US9208849B2
(en)
|
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|
|
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(ja)
|
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2017-01-11 |
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|
|
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(ja)
|
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2017-05-17 |
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|
|
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(en)
|
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2015-05-12 |
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|
|
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(ko)
|
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|
|
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(ja)
|
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|
|
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(ja)
|
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|
|
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(en)
|
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2015-05-12 |
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|
|
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(en)
|
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|
|
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(en)
|
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|
|
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(en)
|
2012-04-25 |
2016-01-05 |
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|
|
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(en)
|
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2016-01-12 |
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|
|
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(en)
|
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2016-03-15 |
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|
|
US9331689B2
(en)
|
2012-04-27 |
2016-05-03 |
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|
|
US8860022B2
(en)
|
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Semiconductor Energy Laboratory Co., Ltd. |
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|
|
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(ja)
|
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2017-09-20 |
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|
|
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(ja)
|
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2017-11-08 |
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|
|
US9048323B2
(en)
|
2012-04-30 |
2015-06-02 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
US9703704B2
(en)
|
2012-05-01 |
2017-07-11 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
US9007090B2
(en)
|
2012-05-01 |
2015-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
US8860023B2
(en)
|
2012-05-01 |
2014-10-14 |
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|
|
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(ja)
|
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|
|
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(ja)
|
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|
|
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(ja)
|
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2017-12-06 |
株式会社半導体エネルギー研究所 |
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|
|
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(ja)
|
2012-05-02 |
2017-03-22 |
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|
|
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(en)
|
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|
|
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(ko)
|
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|
|
SG10201608665WA
(en)
|
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|
|
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(ko)
|
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|
|
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(ko)
|
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|
|
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(de)
|
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|
|
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(ko)
|
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|
|
DE102013207324A1
(de)
|
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|
|
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(ko)
|
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|
|
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(en)
|
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2015-03-31 |
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|
|
US8929128B2
(en)
|
2012-05-17 |
2015-01-06 |
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|
|
US9817032B2
(en)
|
2012-05-23 |
2017-11-14 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
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(ja)
|
2012-05-25 |
2014-01-09 |
Semiconductor Energy Lab Co Ltd |
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|
|
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(ja)
|
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半導体装置の駆動方法
|
|
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(ja)
|
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|
|
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(ko)
|
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|
|
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(zh)
|
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2018-01-09 |
株式会社半导体能源研究所 |
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|
|
US9147706B2
(en)
|
2012-05-29 |
2015-09-29 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
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(ja)
|
2012-05-30 |
2018-08-22 |
株式会社半導体エネルギー研究所 |
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|
|
US8785928B2
(en)
|
2012-05-31 |
2014-07-22 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
US8995607B2
(en)
|
2012-05-31 |
2015-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
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(ko)
|
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2020-06-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
US9048265B2
(en)
|
2012-05-31 |
2015-06-02 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
KR102388690B1
(ko)
|
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|
|
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(ja)
|
2012-05-31 |
2017-07-05 |
株式会社半導体エネルギー研究所 |
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|
|
US9343120B2
(en)
|
2012-06-01 |
2016-05-17 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
US8872174B2
(en)
|
2012-06-01 |
2014-10-28 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
US9135182B2
(en)
|
2012-06-01 |
2015-09-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Central processing unit and driving method thereof
|
|
WO2013180016A1
(en)
|
2012-06-01 |
2013-12-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and alarm device
|
|
US9916793B2
(en)
|
2012-06-01 |
2018-03-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of driving the same
|
|
KR102113160B1
(ko)
|
2012-06-15 |
2020-05-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
US8901557B2
(en)
|
2012-06-15 |
2014-12-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9059219B2
(en)
|
2012-06-27 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
KR102099445B1
(ko)
|
2012-06-29 |
2020-04-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
US8873308B2
(en)
|
2012-06-29 |
2014-10-28 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
US9742378B2
(en)
|
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2017-08-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Pulse output circuit and semiconductor device
|
|
DE112013003041T5
(de)
|
2012-06-29 |
2015-03-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung
|
|
KR102082794B1
(ko)
|
2012-06-29 |
2020-02-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치의 구동 방법, 및 표시 장치
|
|
KR102161077B1
(ko)
|
2012-06-29 |
2020-09-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US9083327B2
(en)
|
2012-07-06 |
2015-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of driving semiconductor device
|
|
US9054678B2
(en)
|
2012-07-06 |
2015-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
|
US9190525B2
(en)
|
2012-07-06 |
2015-11-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including oxide semiconductor layer
|
|
KR102099262B1
(ko)
|
2012-07-11 |
2020-04-09 |
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액정 표시 장치, 및 액정 표시 장치의 구동 방법
|
|
JP2014032399A
(ja)
|
2012-07-13 |
2014-02-20 |
Semiconductor Energy Lab Co Ltd |
液晶表示装置
|
|
JP6006558B2
(ja)
|
2012-07-17 |
2016-10-12 |
株式会社半導体エネルギー研究所 |
半導体装置及びその製造方法
|
|
KR20250154556A
(ko)
|
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2025-10-28 |
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|
|
KR102475812B1
(ko)
|
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2022-12-09 |
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액정 표시 장치
|
|
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(ja)
|
2012-07-20 |
2017-08-23 |
株式会社半導体エネルギー研究所 |
電源制御回路、及び信号処理回路
|
|
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(ko)
|
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2020-04-14 |
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표시 장치
|
|
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(ja)
|
2012-07-26 |
2014-03-06 |
Semiconductor Energy Lab Co Ltd |
半導体装置及びその作製方法
|
|
KR20140013931A
(ko)
|
2012-07-26 |
2014-02-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치
|
|
JP6224931B2
(ja)
|
2012-07-27 |
2017-11-01 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP2014045175A
(ja)
|
2012-08-02 |
2014-03-13 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
JP6134598B2
(ja)
|
2012-08-02 |
2017-05-24 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
SG11201505225TA
(en)
|
2012-08-03 |
2015-08-28 |
Semiconductor Energy Lab |
Oxide semiconductor stacked film and semiconductor device
|
|
WO2014021356A1
(en)
|
2012-08-03 |
2014-02-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9885108B2
(en)
|
2012-08-07 |
2018-02-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming sputtering target
|
|
US10557192B2
(en)
|
2012-08-07 |
2020-02-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for using sputtering target and method for forming oxide film
|
|
JP2014057298A
(ja)
|
2012-08-10 |
2014-03-27 |
Semiconductor Energy Lab Co Ltd |
半導体装置の駆動方法
|
|
TWI581404B
(zh)
|
2012-08-10 |
2017-05-01 |
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半導體裝置以及該半導體裝置的驅動方法
|
|
JP2014057296A
(ja)
|
2012-08-10 |
2014-03-27 |
Semiconductor Energy Lab Co Ltd |
半導体装置の駆動方法
|
|
US9929276B2
(en)
|
2012-08-10 |
2018-03-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US8937307B2
(en)
|
2012-08-10 |
2015-01-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9245958B2
(en)
|
2012-08-10 |
2016-01-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP6220597B2
(ja)
|
2012-08-10 |
2017-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP2014199899A
(ja)
|
2012-08-10 |
2014-10-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR20150043307A
(ko)
|
2012-08-10 |
2015-04-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
KR102099261B1
(ko)
|
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2020-04-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
KR102171650B1
(ko)
|
2012-08-10 |
2020-10-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
US8872120B2
(en)
|
2012-08-23 |
2014-10-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and method for driving the same
|
|
KR102069683B1
(ko)
|
2012-08-24 |
2020-01-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치
|
|
KR102161078B1
(ko)
|
2012-08-28 |
2020-09-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 그 제작 방법
|
|
DE102013216824B4
(de)
|
2012-08-28 |
2024-10-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung
|
|
US9625764B2
(en)
|
2012-08-28 |
2017-04-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
|
KR20140029202A
(ko)
|
2012-08-28 |
2014-03-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
TWI611511B
(zh)
|
2012-08-31 |
2018-01-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
SG11201504939RA
(en)
|
2012-09-03 |
2015-07-30 |
Semiconductor Energy Lab |
Microcontroller
|
|
US8947158B2
(en)
|
2012-09-03 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
DE102013217278B4
(de)
|
2012-09-12 |
2017-03-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung
|
|
US9018624B2
(en)
|
2012-09-13 |
2015-04-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic appliance
|
|
US8981372B2
(en)
|
2012-09-13 |
2015-03-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic appliance
|
|
WO2014042102A1
(en)
|
2012-09-13 |
2014-03-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI831522B
(zh)
|
2012-09-14 |
2024-02-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
US8927985B2
(en)
|
2012-09-20 |
2015-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2014046222A1
(en)
|
2012-09-24 |
2014-03-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
TWI671910B
(zh)
|
2012-09-24 |
2019-09-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
JP6351947B2
(ja)
|
2012-10-12 |
2018-07-04 |
株式会社半導体エネルギー研究所 |
液晶表示装置の作製方法
|
|
TWI681233B
(zh)
|
2012-10-12 |
2020-01-01 |
日商半導體能源研究所股份有限公司 |
液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法
|
|
KR102226090B1
(ko)
|
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2021-03-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
JP6290576B2
(ja)
|
2012-10-12 |
2018-03-07 |
株式会社半導体エネルギー研究所 |
液晶表示装置及びその駆動方法
|
|
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(ja)
|
2012-10-17 |
2018-02-21 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6059501B2
(ja)
|
2012-10-17 |
2017-01-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
WO2014061761A1
(en)
|
2012-10-17 |
2014-04-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Microcontroller and method for manufacturing the same
|
|
KR102094568B1
(ko)
|
2012-10-17 |
2020-03-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그의 제작 방법
|
|
US9166021B2
(en)
|
2012-10-17 |
2015-10-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI591966B
(zh)
|
2012-10-17 |
2017-07-11 |
半導體能源研究所股份有限公司 |
可編程邏輯裝置及可編程邏輯裝置的驅動方法
|
|
WO2014061535A1
(en)
|
2012-10-17 |
2014-04-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP2014082388A
(ja)
|
2012-10-17 |
2014-05-08 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
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(ja)
|
2012-10-17 |
2016-07-13 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
WO2014061567A1
(en)
|
2012-10-17 |
2014-04-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Programmable logic device
|
|
JP6021586B2
(ja)
|
2012-10-17 |
2016-11-09 |
株式会社半導体エネルギー研究所 |
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|
|
KR102220279B1
(ko)
|
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|
|
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(ja)
|
2012-10-23 |
2017-09-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
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(zh)
|
2012-10-24 |
2018-10-01 |
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半導體裝置及其製造方法
|
|
WO2014065343A1
(en)
|
2012-10-24 |
2014-05-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6300489B2
(ja)
|
2012-10-24 |
2018-03-28 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
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(ko)
|
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2020-07-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ko)
|
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2021-07-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
WO2014065389A1
(en)
|
2012-10-25 |
2014-05-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Central control system
|
|
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(ja)
|
2012-10-30 |
2017-10-25 |
株式会社半導体エネルギー研究所 |
表示装置及び電子機器
|
|
CN104769842B
(zh)
|
2012-11-06 |
2017-10-31 |
株式会社半导体能源研究所 |
半导体装置以及其驱动方法
|
|
KR102006585B1
(ko)
|
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2019-08-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
금속 산화물 막 및 금속 산화물 막의 형성 방법
|
|
TWI605593B
(zh)
|
2012-11-15 |
2017-11-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
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(ja)
|
2012-11-15 |
2017-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI608616B
(zh)
|
2012-11-15 |
2017-12-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
JP6317059B2
(ja)
|
2012-11-16 |
2018-04-25 |
株式会社半導体エネルギー研究所 |
半導体装置及び表示装置
|
|
JP6285150B2
(ja)
|
2012-11-16 |
2018-02-28 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI613813B
(zh)
|
2012-11-16 |
2018-02-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
TWI620323B
(zh)
|
2012-11-16 |
2018-04-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
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(zh)
|
2012-11-28 |
2023-11-01 |
日商半導體能源研究所股份有限公司 |
顯示裝置
|
|
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(zh)
|
2012-11-28 |
2018-06-21 |
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顯示裝置及電視接收機
|
|
US9412764B2
(en)
|
2012-11-28 |
2016-08-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device, and electronic device
|
|
KR102148549B1
(ko)
|
2012-11-28 |
2020-08-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
|
US9263531B2
(en)
|
2012-11-28 |
2016-02-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film, film formation method thereof, and semiconductor device
|
|
TWI582993B
(zh)
|
2012-11-30 |
2017-05-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9246011B2
(en)
|
2012-11-30 |
2016-01-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9153649B2
(en)
|
2012-11-30 |
2015-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for evaluating semiconductor device
|
|
CN116207143A
(zh)
|
2012-11-30 |
2023-06-02 |
株式会社半导体能源研究所 |
半导体装置
|
|
JP2014130336A
(ja)
|
2012-11-30 |
2014-07-10 |
Semiconductor Energy Lab Co Ltd |
表示装置
|
|
US9594281B2
(en)
|
2012-11-30 |
2017-03-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
|
US9406810B2
(en)
|
2012-12-03 |
2016-08-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR102207028B1
(ko)
|
2012-12-03 |
2021-01-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US9349593B2
(en)
|
2012-12-03 |
2016-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
KR102112364B1
(ko)
|
2012-12-06 |
2020-05-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US9577446B2
(en)
|
2012-12-13 |
2017-02-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Power storage system and power storage device storing data for the identifying power storage device
|
|
TWI611419B
(zh)
|
2012-12-24 |
2018-01-11 |
半導體能源研究所股份有限公司 |
可程式邏輯裝置及半導體裝置
|
|
DE112013006219T5
(de)
|
2012-12-25 |
2015-09-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung und deren Herstellungsverfahren
|
|
KR102241249B1
(ko)
|
2012-12-25 |
2021-04-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
저항 소자, 표시 장치, 및 전자기기
|
|
KR102680781B1
(ko)
|
2012-12-25 |
2024-07-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US9905585B2
(en)
|
2012-12-25 |
2018-02-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising capacitor
|
|
JP2014142986A
(ja)
|
2012-12-26 |
2014-08-07 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
JP6329762B2
(ja)
|
2012-12-28 |
2018-05-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP2014143410A
(ja)
|
2012-12-28 |
2014-08-07 |
Semiconductor Energy Lab Co Ltd |
半導体装置およびその作製方法
|
|
KR102495290B1
(ko)
|
2012-12-28 |
2023-02-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
TWI607510B
(zh)
|
2012-12-28 |
2017-12-01 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的製造方法
|
|
US9316695B2
(en)
|
2012-12-28 |
2016-04-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR102639256B1
(ko)
|
2012-12-28 |
2024-02-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 및 반도체 장치의 제작 방법
|
|
US9391096B2
(en)
|
2013-01-18 |
2016-07-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI614813B
(zh)
|
2013-01-21 |
2018-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
|
US9466725B2
(en)
|
2013-01-24 |
2016-10-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US9190172B2
(en)
|
2013-01-24 |
2015-11-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6223198B2
(ja)
|
2013-01-24 |
2017-11-01 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP5807076B2
(ja)
|
2013-01-24 |
2015-11-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI619010B
(zh)
|
2013-01-24 |
2018-03-21 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US8981374B2
(en)
|
2013-01-30 |
2015-03-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI593025B
(zh)
|
2013-01-30 |
2017-07-21 |
半導體能源研究所股份有限公司 |
氧化物半導體層的處理方法
|
|
US9076825B2
(en)
|
2013-01-30 |
2015-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the semiconductor device
|
|
TWI618252B
(zh)
|
2013-02-12 |
2018-03-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
KR102112367B1
(ko)
|
2013-02-12 |
2020-05-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
KR102125593B1
(ko)
|
2013-02-13 |
2020-06-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
프로그래머블 로직 디바이스 및 반도체 장치
|
|
US9231111B2
(en)
|
2013-02-13 |
2016-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9190527B2
(en)
|
2013-02-13 |
2015-11-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of semiconductor device
|
|
US8952723B2
(en)
|
2013-02-13 |
2015-02-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Programmable logic device and semiconductor device
|
|
US9318484B2
(en)
|
2013-02-20 |
2016-04-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI611566B
(zh)
|
2013-02-25 |
2018-01-11 |
半導體能源研究所股份有限公司 |
顯示裝置和電子裝置
|
|
US9293544B2
(en)
|
2013-02-26 |
2016-03-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having buried channel structure
|
|
TWI611567B
(zh)
|
2013-02-27 |
2018-01-11 |
半導體能源研究所股份有限公司 |
半導體裝置、驅動電路及顯示裝置
|
|
TWI612321B
(zh)
|
2013-02-27 |
2018-01-21 |
半導體能源研究所股份有限公司 |
成像裝置
|
|
US9373711B2
(en)
|
2013-02-27 |
2016-06-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP2014195241A
(ja)
|
2013-02-28 |
2014-10-09 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
JP6141777B2
(ja)
|
2013-02-28 |
2017-06-07 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
JP2014195243A
(ja)
|
2013-02-28 |
2014-10-09 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
|
KR102238682B1
(ko)
|
2013-02-28 |
2021-04-08 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치와 그 제작 방법
|
|
JP2014195060A
(ja)
|
2013-03-01 |
2014-10-09 |
Semiconductor Energy Lab Co Ltd |
センサ回路及びセンサ回路を用いた半導体装置
|
|
US9276125B2
(en)
|
2013-03-01 |
2016-03-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
KR102153110B1
(ko)
|
2013-03-06 |
2020-09-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체막 및 반도체 장치
|
|
US9269315B2
(en)
|
2013-03-08 |
2016-02-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of semiconductor device
|
|
US8947121B2
(en)
|
2013-03-12 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Programmable logic device
|
|
TWI644433B
(zh)
|
2013-03-13 |
2018-12-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
WO2014142043A1
(en)
|
2013-03-14 |
2014-09-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for driving semiconductor device and semiconductor device
|
|
JP2014199709A
(ja)
|
2013-03-14 |
2014-10-23 |
株式会社半導体エネルギー研究所 |
記憶装置、半導体装置
|
|
JP6283237B2
(ja)
|
2013-03-14 |
2018-02-21 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9294075B2
(en)
|
2013-03-14 |
2016-03-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6298662B2
(ja)
|
2013-03-14 |
2018-03-20 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR20150128823A
(ko)
|
2013-03-14 |
2015-11-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
KR102290247B1
(ko)
|
2013-03-14 |
2021-08-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치와 그 제작 방법
|
|
TWI677193B
(zh)
|
2013-03-15 |
2019-11-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9786350B2
(en)
|
2013-03-18 |
2017-10-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device
|
|
US9577107B2
(en)
|
2013-03-19 |
2017-02-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film and method for forming oxide semiconductor film
|
|
US9153650B2
(en)
|
2013-03-19 |
2015-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor
|
|
JP6093726B2
(ja)
|
2013-03-22 |
2017-03-08 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9007092B2
(en)
|
2013-03-22 |
2015-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6355374B2
(ja)
|
2013-03-22 |
2018-07-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
WO2014157019A1
(en)
|
2013-03-25 |
2014-10-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6272713B2
(ja)
|
2013-03-25 |
2018-01-31 |
株式会社半導体エネルギー研究所 |
プログラマブルロジックデバイス及び半導体装置
|
|
US10347769B2
(en)
|
2013-03-25 |
2019-07-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor with multi-layer source/drain electrodes
|
|
JP6376788B2
(ja)
|
2013-03-26 |
2018-08-22 |
株式会社半導体エネルギー研究所 |
半導体装置およびその作製方法
|
|
JP6316630B2
(ja)
|
2013-03-26 |
2018-04-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9608122B2
(en)
|
2013-03-27 |
2017-03-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP2014209209A
(ja)
|
2013-03-28 |
2014-11-06 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
US9368636B2
(en)
|
2013-04-01 |
2016-06-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
|
|
JP6300589B2
(ja)
|
2013-04-04 |
2018-03-28 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US9112460B2
(en)
|
2013-04-05 |
2015-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Signal processing device
|
|
JP6198434B2
(ja)
|
2013-04-11 |
2017-09-20 |
株式会社半導体エネルギー研究所 |
表示装置及び電子機器
|
|
JP6224338B2
(ja)
|
2013-04-11 |
2017-11-01 |
株式会社半導体エネルギー研究所 |
半導体装置、表示装置及び半導体装置の作製方法
|
|
TWI620324B
(zh)
|
2013-04-12 |
2018-04-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
JP6280794B2
(ja)
|
2013-04-12 |
2018-02-14 |
株式会社半導体エネルギー研究所 |
半導体装置及びその駆動方法
|
|
US10304859B2
(en)
|
2013-04-12 |
2019-05-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having an oxide film on an oxide semiconductor film
|
|
JP6333028B2
(ja)
|
2013-04-19 |
2018-05-30 |
株式会社半導体エネルギー研究所 |
記憶装置及び半導体装置
|
|
US9915848B2
(en)
|
2013-04-19 |
2018-03-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
|
JP6456598B2
(ja)
|
2013-04-19 |
2019-01-23 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
TWI647559B
(zh)
|
2013-04-24 |
2019-01-11 |
Semiconductor Energy Laboratory Co., Ltd. |
顯示裝置
|
|
US9893192B2
(en)
|
2013-04-24 |
2018-02-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6401483B2
(ja)
|
2013-04-26 |
2018-10-10 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
JP6396671B2
(ja)
|
2013-04-26 |
2018-09-26 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI644434B
(zh)
|
2013-04-29 |
2018-12-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
TWI631711B
(zh)
|
2013-05-01 |
2018-08-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
KR102222344B1
(ko)
|
2013-05-02 |
2021-03-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US9231002B2
(en)
|
2013-05-03 |
2016-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
|
US9882058B2
(en)
|
2013-05-03 |
2018-01-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR102210298B1
(ko)
|
2013-05-09 |
2021-01-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
|
US9704894B2
(en)
|
2013-05-10 |
2017-07-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device including pixel electrode including oxide
|
|
US9246476B2
(en)
|
2013-05-10 |
2016-01-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit
|
|
TWI621337B
(zh)
|
2013-05-14 |
2018-04-11 |
半導體能源研究所股份有限公司 |
信號處理裝置
|
|
TWI809225B
(zh)
|
2013-05-16 |
2023-07-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
TWI669824B
(zh)
|
2013-05-16 |
2019-08-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9312392B2
(en)
|
2013-05-16 |
2016-04-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI618058B
(zh)
|
2013-05-16 |
2018-03-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US10032872B2
(en)
|
2013-05-17 |
2018-07-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
|
|
TWI638519B
(zh)
|
2013-05-17 |
2018-10-11 |
半導體能源研究所股份有限公司 |
可程式邏輯裝置及半導體裝置
|
|
JP6298353B2
(ja)
|
2013-05-17 |
2018-03-20 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9209795B2
(en)
|
2013-05-17 |
2015-12-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Signal processing device and measuring method
|
|
US9754971B2
(en)
|
2013-05-18 |
2017-09-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI664731B
(zh)
|
2013-05-20 |
2019-07-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
KR20200038333A
(ko)
|
2013-05-20 |
2020-04-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
KR20250048490A
(ko)
|
2013-05-20 |
2025-04-08 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US9647125B2
(en)
|
2013-05-20 |
2017-05-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US9293599B2
(en)
|
2013-05-20 |
2016-03-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
US9343579B2
(en)
|
2013-05-20 |
2016-05-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
DE102014019794B4
(de)
|
2013-05-20 |
2024-10-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung
|
|
US10416504B2
(en)
|
2013-05-21 |
2019-09-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
|
KR20160009626A
(ko)
|
2013-05-21 |
2016-01-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막 및 그 형성 방법
|
|
JP6374221B2
(ja)
|
2013-06-05 |
2018-08-15 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI624936B
(zh)
|
2013-06-05 |
2018-05-21 |
半導體能源研究所股份有限公司 |
顯示裝置
|
|
JP6400336B2
(ja)
|
2013-06-05 |
2018-10-03 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI687748B
(zh)
|
2013-06-05 |
2020-03-11 |
日商半導體能源研究所股份有限公司 |
顯示裝置及電子裝置
|
|
JP2015195327A
(ja)
|
2013-06-05 |
2015-11-05 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6475424B2
(ja)
|
2013-06-05 |
2019-02-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9773915B2
(en)
|
2013-06-11 |
2017-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
KR102282108B1
(ko)
|
2013-06-13 |
2021-07-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
JP6368155B2
(ja)
|
2013-06-18 |
2018-08-01 |
株式会社半導体エネルギー研究所 |
プログラマブルロジックデバイス
|
|
US9035301B2
(en)
|
2013-06-19 |
2015-05-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device
|
|
TWI652822B
(zh)
|
2013-06-19 |
2019-03-01 |
日商半導體能源研究所股份有限公司 |
氧化物半導體膜及其形成方法
|
|
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(zh)
|
2013-06-21 |
2018-08-21 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9515094B2
(en)
|
2013-06-26 |
2016-12-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Storage device and semiconductor device
|
|
KR20230053723A
(ko)
|
2013-06-27 |
2023-04-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
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(ja)
|
2013-07-05 |
2018-07-04 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6435124B2
(ja)
|
2013-07-08 |
2018-12-05 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US9666697B2
(en)
|
2013-07-08 |
2017-05-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device including an electron trap layer
|
|
US20150008428A1
(en)
|
2013-07-08 |
2015-01-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
TWI622053B
(zh)
|
2013-07-10 |
2018-04-21 |
半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9293480B2
(en)
|
2013-07-10 |
2016-03-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the semiconductor device
|
|
JP6400961B2
(ja)
|
2013-07-12 |
2018-10-03 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
US9006736B2
(en)
|
2013-07-12 |
2015-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6322503B2
(ja)
|
2013-07-16 |
2018-05-09 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6516978B2
(ja)
|
2013-07-17 |
2019-05-22 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9443592B2
(en)
|
2013-07-18 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
US9379138B2
(en)
|
2013-07-19 |
2016-06-28 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
|
US9395070B2
(en)
|
2013-07-19 |
2016-07-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Support of flexible component and light-emitting device
|
|
TWI608523B
(zh)
|
2013-07-19 |
2017-12-11 |
半導體能源研究所股份有限公司 |
Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
|
|
US10529740B2
(en)
|
2013-07-25 |
2020-01-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including semiconductor layer and conductive layer
|
|
TWI636309B
(zh)
|
2013-07-25 |
2018-09-21 |
日商半導體能源研究所股份有限公司 |
液晶顯示裝置及電子裝置
|
|
TWI632688B
(zh)
|
2013-07-25 |
2018-08-11 |
半導體能源研究所股份有限公司 |
半導體裝置以及半導體裝置的製造方法
|
|
TWI641208B
(zh)
|
2013-07-26 |
2018-11-11 |
日商半導體能源研究所股份有限公司 |
直流對直流轉換器
|
|
JP6410496B2
(ja)
|
2013-07-31 |
2018-10-24 |
株式会社半導体エネルギー研究所 |
マルチゲート構造のトランジスタ
|
|
JP6460592B2
(ja)
|
2013-07-31 |
2019-01-30 |
株式会社半導体エネルギー研究所 |
Ｄｃｄｃコンバータ、及び半導体装置
|
|
US9343288B2
(en)
|
2013-07-31 |
2016-05-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI635750B
(zh)
|
2013-08-02 |
2018-09-11 |
半導體能源研究所股份有限公司 |
攝像裝置以及其工作方法
|
|
US9496330B2
(en)
|
2013-08-02 |
2016-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film and semiconductor device
|
|
JP2015053477A
(ja)
|
2013-08-05 |
2015-03-19 |
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半導体装置および半導体装置の作製方法
|
|
JP6345023B2
(ja)
|
2013-08-07 |
2018-06-20 |
株式会社半導体エネルギー研究所 |
半導体装置およびその作製方法
|
|
US9601591B2
(en)
|
2013-08-09 |
2017-03-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
KR102304824B1
(ko)
|
2013-08-09 |
2021-09-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ja)
|
2013-08-19 |
2018-05-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9374048B2
(en)
|
2013-08-20 |
2016-06-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Signal processing device, and driving method and program thereof
|
|
TWI663820B
(zh)
|
2013-08-21 |
2019-06-21 |
日商半導體能源研究所股份有限公司 |
電荷泵電路以及具備電荷泵電路的半導體裝置
|
|
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(ko)
|
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2021-03-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
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(ko)
|
2013-08-23 |
2021-04-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
용량 소자 및 반도체 장치
|
|
US9443987B2
(en)
|
2013-08-23 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI888828B
(zh)
|
2013-08-28 |
2025-07-01 |
日商半導體能源研究所股份有限公司 |
顯示裝置
|
|
WO2015030150A1
(en)
|
2013-08-30 |
2015-03-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Storage circuit and semiconductor device
|
|
US9360564B2
(en)
|
2013-08-30 |
2016-06-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device
|
|
US9552767B2
(en)
|
2013-08-30 |
2017-01-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device
|
|
US9590109B2
(en)
|
2013-08-30 |
2017-03-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP6426402B2
(ja)
|
2013-08-30 |
2018-11-21 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
JP6406926B2
(ja)
|
2013-09-04 |
2018-10-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9449853B2
(en)
|
2013-09-04 |
2016-09-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device comprising electron trap layer
|
|
US9607991B2
(en)
|
2013-09-05 |
2017-03-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6345544B2
(ja)
|
2013-09-05 |
2018-06-20 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US10008513B2
(en)
|
2013-09-05 |
2018-06-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6401977B2
(ja)
|
2013-09-06 |
2018-10-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR102294507B1
(ko)
|
2013-09-06 |
2021-08-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US9590110B2
(en)
|
2013-09-10 |
2017-03-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Ultraviolet light sensor circuit
|
|
TWI640014B
(zh)
|
2013-09-11 |
2018-11-01 |
半導體能源研究所股份有限公司 |
記憶體裝置、半導體裝置及電子裝置
|
|
US9269822B2
(en)
|
2013-09-12 |
2016-02-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
US9893194B2
(en)
|
2013-09-12 |
2018-02-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
JP2015079946A
(ja)
|
2013-09-13 |
2015-04-23 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
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(zh)
|
2013-09-13 |
2020-02-18 |
株式会社半导体能源研究所 |
显示装置
|
|
TWI646690B
(zh)
|
2013-09-13 |
2019-01-01 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
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(ja)
|
2013-09-13 |
2018-11-28 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US9461126B2
(en)
|
2013-09-13 |
2016-10-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
|
|
JP6467171B2
(ja)
|
2013-09-17 |
2019-02-06 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9269915B2
(en)
|
2013-09-18 |
2016-02-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
JP6347704B2
(ja)
|
2013-09-18 |
2018-06-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI677989B
(zh)
|
2013-09-19 |
2019-11-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
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(ja)
|
2013-09-23 |
2019-09-04 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI678740B
(zh)
|
2013-09-23 |
2019-12-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9425217B2
(en)
|
2013-09-23 |
2016-08-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP2015084418A
(ja)
|
2013-09-23 |
2015-04-30 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
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(ja)
|
2013-09-25 |
2018-08-29 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
WO2015046025A1
(en)
|
2013-09-26 |
2015-04-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Switch circuit, semiconductor device, and system
|
|
JP6392603B2
(ja)
|
2013-09-27 |
2018-09-19 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
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(ja)
|
2013-10-02 |
2019-09-25 |
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ブートストラップ回路、およびブートストラップ回路を有する半導体装置
|
|
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(ja)
|
2013-10-04 |
2018-09-05 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TW202431651A
(zh)
|
2013-10-10 |
2024-08-01 |
日商半導體能源研究所股份有限公司 |
液晶顯示裝置
|
|
KR102183763B1
(ko)
|
2013-10-11 |
2020-11-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ja)
|
2013-10-16 |
2019-10-16 |
株式会社半導体エネルギー研究所 |
演算処理装置の駆動方法
|
|
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(zh)
|
2013-10-18 |
2018-11-21 |
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顯示裝置及電子裝置
|
|
TWI621127B
(zh)
|
2013-10-18 |
2018-04-11 |
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運算處理裝置及其驅動方法
|
|
DE112014004839T5
(de)
|
2013-10-22 |
2016-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Anzeigevorrichtung
|
|
DE102014220672A1
(de)
|
2013-10-22 |
2015-05-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung
|
|
WO2015060133A1
(en)
|
2013-10-22 |
2015-04-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9455349B2
(en)
|
2013-10-22 |
2016-09-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor thin film transistor with reduced impurity diffusion
|
|
KR102436895B1
(ko)
|
2013-10-22 |
2022-08-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치와 그 제작 방법
|
|
US9276128B2
(en)
|
2013-10-22 |
2016-03-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for manufacturing the same, and etchant used for the same
|
|
JP2015179247A
(ja)
|
2013-10-22 |
2015-10-08 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
US9583516B2
(en)
|
2013-10-25 |
2017-02-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
JP6457239B2
(ja)
|
2013-10-31 |
2019-01-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9590111B2
(en)
|
2013-11-06 |
2017-03-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the semiconductor device
|
|
JP6478562B2
(ja)
|
2013-11-07 |
2019-03-06 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6440457B2
(ja)
|
2013-11-07 |
2018-12-19 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9385054B2
(en)
|
2013-11-08 |
2016-07-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Data processing device and manufacturing method thereof
|
|
JP2015118724A
(ja)
|
2013-11-13 |
2015-06-25 |
株式会社半導体エネルギー研究所 |
半導体装置及び半導体装置の駆動方法
|
|
JP6393590B2
(ja)
|
2013-11-22 |
2018-09-19 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6426437B2
(ja)
|
2013-11-22 |
2018-11-21 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6486660B2
(ja)
|
2013-11-27 |
2019-03-20 |
株式会社半導体エネルギー研究所 |
表示装置
|
|
US20150155313A1
(en)
|
2013-11-29 |
2015-06-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP2016001712A
(ja)
|
2013-11-29 |
2016-01-07 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US9882014B2
(en)
|
2013-11-29 |
2018-01-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP6496132B2
(ja)
|
2013-12-02 |
2019-04-03 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
CN110265482B
(zh)
|
2013-12-02 |
2023-08-08 |
株式会社半导体能源研究所 |
显示装置
|
|
KR101860466B1
(ko)
|
2013-12-02 |
2018-05-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 그 제조방법
|
|
US9991392B2
(en)
|
2013-12-03 |
2018-06-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP2016027597A
(ja)
|
2013-12-06 |
2016-02-18 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9349751B2
(en)
|
2013-12-12 |
2016-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6537264B2
(ja)
|
2013-12-12 |
2019-07-03 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI642186B
(zh)
|
2013-12-18 |
2018-11-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
TWI721409B
(zh)
|
2013-12-19 |
2021-03-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9379192B2
(en)
|
2013-12-20 |
2016-06-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6444714B2
(ja)
|
2013-12-20 |
2018-12-26 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
WO2015097586A1
(en)
|
2013-12-25 |
2015-07-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2015097589A1
(en)
|
2013-12-26 |
2015-07-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2015097596A1
(en)
|
2013-12-26 |
2015-07-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6402017B2
(ja)
|
2013-12-26 |
2018-10-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI637484B
(zh)
|
2013-12-26 |
2018-10-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9960280B2
(en)
|
2013-12-26 |
2018-05-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR102658554B1
(ko)
|
2013-12-27 |
2024-04-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
발광 장치
|
|
JP6506961B2
(ja)
|
2013-12-27 |
2019-04-24 |
株式会社半導体エネルギー研究所 |
液晶表示装置
|
|
US9397149B2
(en)
|
2013-12-27 |
2016-07-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2015097593A1
(en)
|
2013-12-27 |
2015-07-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9472678B2
(en)
|
2013-12-27 |
2016-10-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9349418B2
(en)
|
2013-12-27 |
2016-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving the same
|
|
US9318618B2
(en)
|
2013-12-27 |
2016-04-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9577110B2
(en)
|
2013-12-27 |
2017-02-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
|
|
JP6506545B2
(ja)
|
2013-12-27 |
2019-04-24 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6444723B2
(ja)
|
2014-01-09 |
2018-12-26 |
株式会社半導体エネルギー研究所 |
装置
|
|
US9300292B2
(en)
|
2014-01-10 |
2016-03-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Circuit including transistor
|
|
US9401432B2
(en)
|
2014-01-16 |
2016-07-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
US9379713B2
(en)
|
2014-01-17 |
2016-06-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Data processing device and driving method thereof
|
|
KR102306200B1
(ko)
|
2014-01-24 |
2021-09-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
WO2015114476A1
(en)
|
2014-01-28 |
2015-08-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9929044B2
(en)
|
2014-01-30 |
2018-03-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
|
US9929279B2
(en)
|
2014-02-05 |
2018-03-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9653487B2
(en)
|
2014-02-05 |
2017-05-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, manufacturing method thereof, module, and electronic device
|
|
US9443876B2
(en)
|
2014-02-05 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
|
|
TWI665778B
(zh)
|
2014-02-05 |
2019-07-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置、模組及電子裝置
|
|
US9721968B2
(en)
|
2014-02-06 |
2017-08-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, electronic component, and electronic appliance
|
|
JP2015165226A
(ja)
|
2014-02-07 |
2015-09-17 |
株式会社半導体エネルギー研究所 |
装置
|
|
JP6545970B2
(ja)
|
2014-02-07 |
2019-07-17 |
株式会社半導体エネルギー研究所 |
装置
|
|
TWI685116B
(zh)
|
2014-02-07 |
2020-02-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
US9479175B2
(en)
|
2014-02-07 |
2016-10-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
JP6420165B2
(ja)
|
2014-02-07 |
2018-11-07 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
CN105960633B
(zh)
|
2014-02-07 |
2020-06-19 |
株式会社半导体能源研究所 |
半导体装置、装置及电子设备
|
|
TWI803431B
(zh)
|
2014-02-11 |
2023-05-21 |
日商半導體能源研究所股份有限公司 |
顯示裝置及電子裝置
|
|
KR102317297B1
(ko)
|
2014-02-19 |
2021-10-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물, 반도체 장치, 모듈, 및 전자 장치
|
|
US9817040B2
(en)
|
2014-02-21 |
2017-11-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Measuring method of low off-state current of transistor
|
|
CN118588742A
(zh)
|
2014-02-21 |
2024-09-03 |
株式会社半导体能源研究所 |
半导体膜、晶体管、半导体装置、显示装置以及电子设备
|
|
JP2015172991A
(ja)
|
2014-02-21 |
2015-10-01 |
株式会社半導体エネルギー研究所 |
半導体装置、電子部品、及び電子機器
|
|
US9564535B2
(en)
|
2014-02-28 |
2017-02-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
|
|
WO2015128774A1
(en)
|
2014-02-28 |
2015-09-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the semiconductor device
|
|
KR102329066B1
(ko)
|
2014-02-28 |
2021-11-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 구동 방법, 및 전자 기기
|
|
US10074576B2
(en)
|
2014-02-28 |
2018-09-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
|
US9294096B2
(en)
|
2014-02-28 |
2016-03-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6474280B2
(ja)
|
2014-03-05 |
2019-02-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR20150104518A
(ko)
|
2014-03-05 |
2015-09-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
레벨 시프터 회로
|
|
US9537478B2
(en)
|
2014-03-06 |
2017-01-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US10096489B2
(en)
|
2014-03-06 |
2018-10-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
JP6625328B2
(ja)
|
2014-03-06 |
2019-12-25 |
株式会社半導体エネルギー研究所 |
半導体装置の駆動方法
|
|
US9397637B2
(en)
|
2014-03-06 |
2016-07-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Voltage controlled oscillator, semiconductor device, and electronic device
|
|
WO2015132697A1
(en)
|
2014-03-07 |
2015-09-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR102267237B1
(ko)
|
2014-03-07 |
2021-06-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 전자 기기
|
|
JP6442321B2
(ja)
|
2014-03-07 |
2018-12-19 |
株式会社半導体エネルギー研究所 |
半導体装置及びその駆動方法、並びに電子機器
|
|
US9711536B2
(en)
|
2014-03-07 |
2017-07-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, electronic component, and electronic device
|
|
US9443872B2
(en)
|
2014-03-07 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9419622B2
(en)
|
2014-03-07 |
2016-08-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
WO2015132694A1
(en)
|
2014-03-07 |
2015-09-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Touch sensor, touch panel, and manufacturing method of touch panel
|
|
US9653611B2
(en)
|
2014-03-07 |
2017-05-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP6585354B2
(ja)
|
2014-03-07 |
2019-10-02 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR20160132405A
(ko)
|
2014-03-12 |
2016-11-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
US9640669B2
(en)
|
2014-03-13 |
2017-05-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
|
|
JP6525421B2
(ja)
|
2014-03-13 |
2019-06-05 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9324747B2
(en)
|
2014-03-13 |
2016-04-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device
|
|
JP6677449B2
(ja)
|
2014-03-13 |
2020-04-08 |
株式会社半導体エネルギー研究所 |
半導体装置の駆動方法
|
|
JP6560508B2
(ja)
|
2014-03-13 |
2019-08-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR102748398B1
(ko)
|
2014-03-13 |
2025-01-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
촬상 장치
|
|
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(ja)
|
2014-03-13 |
2019-07-10 |
株式会社半導体エネルギー研究所 |
プログラマブルロジックデバイスの動作方法
|
|
WO2015136412A1
(en)
|
2014-03-14 |
2015-09-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Circuit system
|
|
JP6559444B2
(ja)
|
2014-03-14 |
2019-08-14 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US9887212B2
(en)
|
2014-03-14 |
2018-02-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
JP2015188071A
(ja)
|
2014-03-14 |
2015-10-29 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9299848B2
(en)
|
2014-03-14 |
2016-03-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, RF tag, and electronic device
|
|
JP6509596B2
(ja)
|
2014-03-18 |
2019-05-08 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
SG11201606536XA
(en)
|
2014-03-18 |
2016-09-29 |
Semiconductor Energy Lab Co Ltd |
Semiconductor device and manufacturing method thereof
|
|
US9887291B2
(en)
|
2014-03-19 |
2018-02-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module
|
|
US9842842B2
(en)
|
2014-03-19 |
2017-12-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and semiconductor device and electronic device having the same
|
|
JP6495698B2
(ja)
|
2014-03-20 |
2019-04-03 |
株式会社半導体エネルギー研究所 |
半導体装置、電子部品、及び電子機器
|
|
TWI657488B
(zh)
|
2014-03-20 |
2019-04-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置
|
|
WO2015145292A1
(en)
|
2014-03-28 |
2015-10-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and semiconductor device
|
|
JP6487738B2
(ja)
|
2014-03-31 |
2019-03-20 |
株式会社半導体エネルギー研究所 |
半導体装置、電子部品
|
|
TWI735206B
(zh)
|
2014-04-10 |
2021-08-01 |
日商半導體能源研究所股份有限公司 |
記憶體裝置及半導體裝置
|
|
TWI646782B
(zh)
|
2014-04-11 |
2019-01-01 |
日商半導體能源研究所股份有限公司 |
保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置
|
|
JP6635670B2
(ja)
|
2014-04-11 |
2020-01-29 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6541398B2
(ja)
|
2014-04-11 |
2019-07-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9674470B2
(en)
|
2014-04-11 |
2017-06-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for driving semiconductor device, and method for driving electronic device
|
|
KR20160144492A
(ko)
|
2014-04-18 |
2016-12-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 전자 장치
|
|
KR102318728B1
(ko)
|
2014-04-18 |
2021-10-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치와 이를 가지는 표시 장치
|
|
KR102511325B1
(ko)
|
2014-04-18 |
2023-03-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 그 동작 방법
|
|
JP6613044B2
(ja)
|
2014-04-22 |
2019-11-27 |
株式会社半導体エネルギー研究所 |
表示装置、表示モジュール、及び電子機器
|
|
KR102380829B1
(ko)
|
2014-04-23 |
2022-03-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
촬상 장치
|
|
TWI643457B
(zh)
|
2014-04-25 |
2018-12-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
KR102330412B1
(ko)
|
2014-04-25 |
2021-11-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 전자 부품, 및 전자 기기
|
|
JP6468686B2
(ja)
|
2014-04-25 |
2019-02-13 |
株式会社半導体エネルギー研究所 |
入出力装置
|
|
US9780226B2
(en)
|
2014-04-25 |
2017-10-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US10043913B2
(en)
|
2014-04-30 |
2018-08-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor film, semiconductor device, display device, module, and electronic device
|
|
US10656799B2
(en)
|
2014-05-02 |
2020-05-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and operation method thereof
|
|
TWI679624B
(zh)
|
2014-05-02 |
2019-12-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
JP6537341B2
(ja)
|
2014-05-07 |
2019-07-03 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6653997B2
(ja)
|
2014-05-09 |
2020-02-26 |
株式会社半導体エネルギー研究所 |
表示補正回路及び表示装置
|
|
KR102333604B1
(ko)
|
2014-05-15 |
2021-11-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 이 반도체 장치를 포함하는 표시 장치
|
|
JP2015233130A
(ja)
|
2014-05-16 |
2015-12-24 |
株式会社半導体エネルギー研究所 |
半導体基板および半導体装置の作製方法
|
|
JP6612056B2
(ja)
|
2014-05-16 |
2019-11-27 |
株式会社半導体エネルギー研究所 |
撮像装置、及び監視装置
|
|
JP6580863B2
(ja)
|
2014-05-22 |
2019-09-25 |
株式会社半導体エネルギー研究所 |
半導体装置、健康管理システム
|
|
TWI672804B
(zh)
|
2014-05-23 |
2019-09-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
|
JP6616102B2
(ja)
|
2014-05-23 |
2019-12-04 |
株式会社半導体エネルギー研究所 |
記憶装置及び電子機器
|
|
US10020403B2
(en)
|
2014-05-27 |
2018-07-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9874775B2
(en)
|
2014-05-28 |
2018-01-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and electronic device
|
|
KR20150138026A
(ko)
|
2014-05-29 |
2015-12-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
JP6615490B2
(ja)
|
2014-05-29 |
2019-12-04 |
株式会社半導体エネルギー研究所 |
半導体装置及び電子機器
|
|
KR102418666B1
(ko)
|
2014-05-29 |
2022-07-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
|
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(ja)
|
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記憶装置
|
|
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(ja)
|
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2019-06-05 |
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|
|
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(ko)
|
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반도체 장치 및 이를 제조하기 위한 방법
|
|
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(ja)
|
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2019-07-03 |
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半導体装置、及び電子機器
|
|
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(zh)
|
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|
|
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(ko)
|
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반도체 장치, 이의 제조 방법, 및 전자 장치
|
|
US9831238B2
(en)
|
2014-05-30 |
2017-11-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including insulating film having opening portion and conductive film in the opening portion
|
|
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(ja)
|
2014-05-30 |
2019-07-03 |
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半導体装置及び電子機器
|
|
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(zh)
|
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2019-01-01 |
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|
|
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(ko)
|
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입력 장치 및 입출력 장치
|
|
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(ja)
|
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|
|
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(ko)
|
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|
|
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(zh)
|
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|
|
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(zh)
|
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|
|
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(ko)
|
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|
|
US9722090B2
(en)
|
2014-06-23 |
2017-08-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including first gate oxide semiconductor film, and second gate
|
|
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(ja)
|
2014-06-25 |
2019-07-17 |
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撮像装置、監視装置、及び電子機器
|
|
US10002971B2
(en)
|
2014-07-03 |
2018-06-19 |
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Semiconductor device and display device including the semiconductor device
|
|
US9647129B2
(en)
|
2014-07-04 |
2017-05-09 |
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Semiconductor device
|
|
US9461179B2
(en)
|
2014-07-11 |
2016-10-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
|
|
CN112038410A
(zh)
|
2014-07-15 |
2020-12-04 |
株式会社半导体能源研究所 |
半导体装置及其制造方法以及包括半导体装置的显示装置
|
|
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(ja)
|
2014-07-18 |
2019-09-25 |
株式会社半導体エネルギー研究所 |
表示システム
|
|
JP2016029795A
(ja)
|
2014-07-18 |
2016-03-03 |
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半導体装置、撮像装置及び電子機器
|
|
WO2016012893A1
(en)
|
2014-07-25 |
2016-01-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Oscillator circuit and semiconductor device including the same
|
|
US9312280B2
(en)
|
2014-07-25 |
2016-04-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US10115830B2
(en)
|
2014-07-29 |
2018-10-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, manufacturing method thereof, and electronic device
|
|
JP6555956B2
(ja)
|
2014-07-31 |
2019-08-07 |
株式会社半導体エネルギー研究所 |
撮像装置、監視装置、及び電子機器
|
|
WO2016016765A1
(en)
|
2014-07-31 |
2016-02-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
|
US9705004B2
(en)
|
2014-08-01 |
2017-07-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US9595955B2
(en)
|
2014-08-08 |
2017-03-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including power storage elements and switches
|
|
JP6553444B2
(ja)
|
2014-08-08 |
2019-07-31 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6652342B2
(ja)
|
2014-08-08 |
2020-02-19 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US10147747B2
(en)
|
2014-08-21 |
2018-12-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, manufacturing method thereof, and electronic device
|
|
US10032888B2
(en)
|
2014-08-22 |
2018-07-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device
|
|
US10559667B2
(en)
|
2014-08-25 |
2020-02-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for measuring current of semiconductor device
|
|
KR102509203B1
(ko)
|
2014-08-29 |
2023-03-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
촬상 장치 및 전자 기기
|
|
KR102393272B1
(ko)
|
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2022-05-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
촬상 장치 및 전자 기기
|
|
KR102329498B1
(ko)
|
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2021-11-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
|
TW201614626A
(en)
|
2014-09-05 |
2016-04-16 |
Semiconductor Energy Lab |
Display device and electronic device
|
|
US9766517B2
(en)
|
2014-09-05 |
2017-09-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and display module
|
|
JP6676316B2
(ja)
|
2014-09-12 |
2020-04-08 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US9722091B2
(en)
|
2014-09-12 |
2017-08-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
JP2016066788A
(ja)
|
2014-09-19 |
2016-04-28 |
株式会社半導体エネルギー研究所 |
半導体膜の評価方法および半導体装置の作製方法
|
|
KR20160034200A
(ko)
|
2014-09-19 |
2016-03-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
|
WO2016042433A1
(en)
|
2014-09-19 |
2016-03-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
US9401364B2
(en)
|
2014-09-19 |
2016-07-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, electronic component, and electronic device
|
|
US10071904B2
(en)
|
2014-09-25 |
2018-09-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display module, and electronic device
|
|
JP2016111677A
(ja)
|
2014-09-26 |
2016-06-20 |
株式会社半導体エネルギー研究所 |
半導体装置、無線センサ、及び電子機器
|
|
WO2016046685A1
(en)
|
2014-09-26 |
2016-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device
|
|
JP6633330B2
(ja)
|
2014-09-26 |
2020-01-22 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US10170055B2
(en)
|
2014-09-26 |
2019-01-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and driving method thereof
|
|
US9450581B2
(en)
|
2014-09-30 |
2016-09-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit, semiconductor device, electronic component, and electronic device
|
|
WO2016055894A1
(en)
|
2014-10-06 |
2016-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
US9698170B2
(en)
|
2014-10-07 |
2017-07-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display module, and electronic device
|
|
WO2016055903A1
(en)
|
2014-10-10 |
2016-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, circuit board, and electronic device
|
|
DE112015004644T5
(de)
|
2014-10-10 |
2017-07-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Logikschaltung, Verarbeitungseinheit, elektronisches Bauelement und elektronische Vorrichtung
|
|
US9991393B2
(en)
|
2014-10-16 |
2018-06-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, module, and electronic device
|
|
JP6645793B2
(ja)
|
2014-10-17 |
2020-02-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
WO2016063159A1
(en)
|
2014-10-20 |
2016-04-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof, module, and electronic device
|
|
US10068927B2
(en)
|
2014-10-23 |
2018-09-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display module, and electronic device
|
|
JP6615565B2
(ja)
|
2014-10-24 |
2019-12-04 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
TWI652362B
(zh)
|
2014-10-28 |
2019-03-01 |
日商半導體能源研究所股份有限公司 |
氧化物及其製造方法
|
|
KR102439023B1
(ko)
|
2014-10-28 |
2022-08-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치, 표시 장치의 제작 방법, 및 전자 기기
|
|
US9704704B2
(en)
|
2014-10-28 |
2017-07-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the same
|
|
US9793905B2
(en)
|
2014-10-31 |
2017-10-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
US10680017B2
(en)
|
2014-11-07 |
2020-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
|
|
US9548327B2
(en)
|
2014-11-10 |
2017-01-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device having a selenium containing photoelectric conversion layer
|
|
US9584707B2
(en)
|
2014-11-10 |
2017-02-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
|
TWI711165B
(zh)
|
2014-11-21 |
2020-11-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置及電子裝置
|
|
US9438234B2
(en)
|
2014-11-21 |
2016-09-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit and semiconductor device including logic circuit
|
|
TWI691088B
(zh)
|
2014-11-21 |
2020-04-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
|
JP6563313B2
(ja)
|
2014-11-21 |
2019-08-21 |
株式会社半導体エネルギー研究所 |
半導体装置、及び電子機器
|
|
TWI669819B
(zh)
|
2014-11-28 |
2019-08-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置、模組以及電子裝置
|
|
JP6647841B2
(ja)
|
2014-12-01 |
2020-02-14 |
株式会社半導体エネルギー研究所 |
酸化物の作製方法
|
|
JP6613116B2
(ja)
|
2014-12-02 |
2019-11-27 |
株式会社半導体エネルギー研究所 |
半導体装置、及び半導体装置の作製方法
|
|
JP6667267B2
(ja)
|
2014-12-08 |
2020-03-18 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6647846B2
(ja)
|
2014-12-08 |
2020-02-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6833315B2
(ja)
|
2014-12-10 |
2021-02-24 |
株式会社半導体エネルギー研究所 |
半導体装置、及び電子機器
|
|
JP6689062B2
(ja)
|
2014-12-10 |
2020-04-28 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9773832B2
(en)
|
2014-12-10 |
2017-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
CN107004722A
(zh)
|
2014-12-10 |
2017-08-01 |
株式会社半导体能源研究所 |
半导体装置及其制造方法
|
|
WO2016092416A1
(en)
|
2014-12-11 |
2016-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, memory device, and electronic device
|
|
JP2016116220A
(ja)
|
2014-12-16 |
2016-06-23 |
株式会社半導体エネルギー研究所 |
半導体装置、及び電子機器
|
|
JP6676354B2
(ja)
|
2014-12-16 |
2020-04-08 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
KR102581808B1
(ko)
|
2014-12-18 |
2023-09-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 센서 장치, 및 전자 기기
|
|
KR20170101233A
(ko)
|
2014-12-26 |
2017-09-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
스퍼터링용 타깃의 제작 방법
|
|
US10396210B2
(en)
|
2014-12-26 |
2019-08-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device
|
|
TWI686874B
(zh)
|
2014-12-26 |
2020-03-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
|
|
KR20170098839A
(ko)
|
2014-12-29 |
2017-08-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치를 가지는 표시 장치
|
|
US10522693B2
(en)
|
2015-01-16 |
2019-12-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and electronic device
|
|
US9443564B2
(en)
|
2015-01-26 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, electronic component, and electronic device
|
|
US9954112B2
(en)
|
2015-01-26 |
2018-04-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9812587B2
(en)
|
2015-01-26 |
2017-11-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9647132B2
(en)
|
2015-01-30 |
2017-05-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and memory device
|
|
TWI710124B
(zh)
|
2015-01-30 |
2020-11-11 |
日商半導體能源研究所股份有限公司 |
成像裝置及電子裝置
|
|
WO2016125049A1
(en)
|
2015-02-02 |
2016-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide and manufacturing method thereof
|
|
KR102875870B1
(ko)
|
2015-02-04 |
2025-10-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 반도체 장치의 제조 방법, 또는 반도체 장치를 포함하는 표시 장치
|
|
US9660100B2
(en)
|
2015-02-06 |
2017-05-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
TWI683365B
(zh)
|
2015-02-06 |
2020-01-21 |
日商半導體能源研究所股份有限公司 |
裝置及其製造方法以及電子裝置
|
|
JP6717604B2
(ja)
|
2015-02-09 |
2020-07-01 |
株式会社半導体エネルギー研究所 |
半導体装置、中央処理装置及び電子機器
|
|
US9954113B2
(en)
|
2015-02-09 |
2018-04-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor including oxide semiconductor, semiconductor device including the transistor, and electronic device including the transistor
|
|
WO2016128859A1
(en)
|
2015-02-11 |
2016-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP2016154225A
(ja)
|
2015-02-12 |
2016-08-25 |
株式会社半導体エネルギー研究所 |
半導体装置およびその作製方法
|
|
US9818880B2
(en)
|
2015-02-12 |
2017-11-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the semiconductor device
|
|
KR102585396B1
(ko)
|
2015-02-12 |
2023-10-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막 및 반도체 장치
|
|
US10249644B2
(en)
|
2015-02-13 |
2019-04-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of the same
|
|
US9991394B2
(en)
|
2015-02-20 |
2018-06-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and fabrication method thereof
|
|
US9489988B2
(en)
|
2015-02-20 |
2016-11-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device
|
|
US10403646B2
(en)
|
2015-02-20 |
2019-09-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
|
JP6711642B2
(ja)
|
2015-02-25 |
2020-06-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6739185B2
(ja)
|
2015-02-26 |
2020-08-12 |
株式会社半導体エネルギー研究所 |
ストレージシステム、およびストレージ制御回路
|
|
US9653613B2
(en)
|
2015-02-27 |
2017-05-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US9685560B2
(en)
|
2015-03-02 |
2017-06-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, method for manufacturing transistor, semiconductor device, and electronic device
|
|
TWI718125B
(zh)
|
2015-03-03 |
2021-02-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
|
CN107408579B
(zh)
|
2015-03-03 |
2021-04-02 |
株式会社半导体能源研究所 |
半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置
|
|
KR102526654B1
(ko)
|
2015-03-03 |
2023-04-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막, 상기 산화물 반도체막을 포함하는 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
|
|
US9905700B2
(en)
|
2015-03-13 |
2018-02-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device or memory device and driving method thereof
|
|
WO2016147074A1
(en)
|
2015-03-17 |
2016-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Touch panel
|
|
US10008609B2
(en)
|
2015-03-17 |
2018-06-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for manufacturing the same, or display device including the same
|
|
US9964799B2
(en)
|
2015-03-17 |
2018-05-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module, and electronic device
|
|
JP2016225602A
(ja)
|
2015-03-17 |
2016-12-28 |
株式会社半導体エネルギー研究所 |
半導体装置およびその作製方法
|
|
JP2016177280A
(ja)
|
2015-03-18 |
2016-10-06 |
株式会社半導体エネルギー研究所 |
表示装置および電子機器、並びに表示装置の駆動方法
|
|
US10147823B2
(en)
|
2015-03-19 |
2018-12-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
KR102582523B1
(ko)
|
2015-03-19 |
2023-09-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 전자 기기
|
|
JP6662665B2
(ja)
|
2015-03-19 |
2020-03-11 |
株式会社半導体エネルギー研究所 |
液晶表示装置及び該液晶表示装置を用いた電子機器
|
|
US9634048B2
(en)
|
2015-03-24 |
2017-04-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
|
KR20160114511A
(ko)
|
2015-03-24 |
2016-10-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
|
US9842938B2
(en)
|
2015-03-24 |
2017-12-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including semiconductor device
|
|
US10096715B2
(en)
|
2015-03-26 |
2018-10-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for manufacturing the same, and electronic device
|
|
US10429704B2
(en)
|
2015-03-26 |
2019-10-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module including the display device, and electronic device including the display device or the display module
|
|
JP6736321B2
(ja)
|
2015-03-27 |
2020-08-05 |
株式会社半導体エネルギー研究所 |
半導体装置の製造方法
|
|
US9806200B2
(en)
|
2015-03-27 |
2017-10-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
TWI695513B
(zh)
|
2015-03-27 |
2020-06-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置及電子裝置
|
|
TW202316486A
(zh)
|
2015-03-30 |
2023-04-16 |
日商半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
|
US9716852B2
(en)
|
2015-04-03 |
2017-07-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Broadcast system
|
|
US10389961B2
(en)
|
2015-04-09 |
2019-08-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
|
WO2016166628A1
(en)
|
2015-04-13 |
2016-10-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of the same
|
|
US10372274B2
(en)
|
2015-04-13 |
2019-08-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and touch panel
|
|
US10056497B2
(en)
|
2015-04-15 |
2018-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US10460984B2
(en)
|
2015-04-15 |
2019-10-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for fabricating electrode and semiconductor device
|
|
JP2016206659A
(ja)
|
2015-04-16 |
2016-12-08 |
株式会社半導体エネルギー研究所 |
表示装置および電子機器、並びに表示装置の駆動方法
|
|
US10192995B2
(en)
|
2015-04-28 |
2019-01-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US10002970B2
(en)
|
2015-04-30 |
2018-06-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, manufacturing method of the same, or display device including the same
|
|
KR102549926B1
(ko)
|
2015-05-04 |
2023-06-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 반도체 장치의 제작 방법, 및 전자기기
|
|
US10671204B2
(en)
|
2015-05-04 |
2020-06-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Touch panel and data processor
|
|
JP6681780B2
(ja)
|
2015-05-07 |
2020-04-15 |
株式会社半導体エネルギー研究所 |
表示システムおよび電子機器
|
|
DE102016207737A1
(de)
|
2015-05-11 |
2016-11-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung, Verfahren zum Herstellen der Halbleitervorrichtung, Reifen und beweglicher Gegenstand
|
|
TWI693719B
(zh)
|
2015-05-11 |
2020-05-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
|
US11728356B2
(en)
|
2015-05-14 |
2023-08-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Photoelectric conversion element and imaging device
|
|
JP6935171B2
(ja)
|
2015-05-14 |
2021-09-15 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9627034B2
(en)
|
2015-05-15 |
2017-04-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Electronic device
|
|
US9837547B2
(en)
|
2015-05-22 |
2017-12-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising oxide conductor and display device including the semiconductor device
|
|
CN113990756A
(zh)
|
2015-05-22 |
2022-01-28 |
株式会社半导体能源研究所 |
半导体装置以及包括该半导体装置的显示装置
|
|
JP2016225614A
(ja)
|
2015-05-26 |
2016-12-28 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
JP6773453B2
(ja)
|
2015-05-26 |
2020-10-21 |
株式会社半導体エネルギー研究所 |
記憶装置及び電子機器
|
|
US10139663B2
(en)
|
2015-05-29 |
2018-11-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Input/output device and electronic device
|
|
KR102553553B1
(ko)
|
2015-06-12 |
2023-07-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
촬상 장치, 및 그 동작 방법 및 전자 기기
|
|
DE112016002769T5
(de)
|
2015-06-19 |
2018-03-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung, Herstellungsverfahren dafür und elektronisches Gerät
|
|
US9860465B2
(en)
|
2015-06-23 |
2018-01-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
|
US9935633B2
(en)
|
2015-06-30 |
2018-04-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit, semiconductor device, electronic component, and electronic device
|
|
US10290573B2
(en)
|
2015-07-02 |
2019-05-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
US9917209B2
(en)
|
2015-07-03 |
2018-03-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device including step of forming trench over semiconductor
|
|
WO2017006207A1
(en)
|
2015-07-08 |
2017-01-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP2017022377A
(ja)
|
2015-07-14 |
2017-01-26 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US10501003B2
(en)
|
2015-07-17 |
2019-12-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, lighting device, and vehicle
|
|
US10985278B2
(en)
|
2015-07-21 |
2021-04-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
US11189736B2
(en)
|
2015-07-24 |
2021-11-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
US11024725B2
(en)
|
2015-07-24 |
2021-06-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including metal oxide film
|
|
US10978489B2
(en)
|
2015-07-24 |
2021-04-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
|
|
US10424671B2
(en)
|
2015-07-29 |
2019-09-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, circuit board, and electronic device
|
|
US10585506B2
(en)
|
2015-07-30 |
2020-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device with high visibility regardless of illuminance of external light
|
|
US10019025B2
(en)
|
2015-07-30 |
2018-07-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
US9825177B2
(en)
|
2015-07-30 |
2017-11-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of a semiconductor device using multiple etching mask
|
|
CN106409919A
(zh)
|
2015-07-30 |
2017-02-15 |
株式会社半导体能源研究所 |
半导体装置以及包括该半导体装置的显示装置
|
|
JP6725357B2
(ja)
|
2015-08-03 |
2020-07-15 |
株式会社半導体エネルギー研究所 |
半導体装置、半導体装置の作製方法
|
|
US9876946B2
(en)
|
2015-08-03 |
2018-01-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
|
JP6791661B2
(ja)
|
2015-08-07 |
2020-11-25 |
株式会社半導体エネルギー研究所 |
表示パネル
|
|
WO2017029576A1
(en)
|
2015-08-19 |
2017-02-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
|
JP2017041877A
(ja)
|
2015-08-21 |
2017-02-23 |
株式会社半導体エネルギー研究所 |
半導体装置、電子部品、および電子機器
|
|
US9666606B2
(en)
|
2015-08-21 |
2017-05-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
US9773919B2
(en)
|
2015-08-26 |
2017-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
WO2017037564A1
(en)
|
2015-08-28 |
2017-03-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor, transistor, and semiconductor device
|
|
JP2017050537A
(ja)
|
2015-08-31 |
2017-03-09 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9911756B2
(en)
|
2015-08-31 |
2018-03-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
|
|
JP6807683B2
(ja)
|
2015-09-11 |
2021-01-06 |
株式会社半導体エネルギー研究所 |
入出力パネル
|
|
SG10201607278TA
(en)
|
2015-09-18 |
2017-04-27 |
Semiconductor Energy Lab Co Ltd |
Semiconductor device and electronic device
|
|
JP2017063420A
(ja)
|
2015-09-25 |
2017-03-30 |
株式会社半導体エネルギー研究所 |
半導体装置
|
|
US9935143B2
(en)
|
2015-09-30 |
2018-04-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
WO2017064590A1
(en)
|
2015-10-12 |
2017-04-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
|
WO2017064587A1
(en)
|
2015-10-12 |
2017-04-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Display panel, input/output device, data processor, and method for manufacturing display panel
|
|
US9852926B2
(en)
|
2015-10-20 |
2017-12-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method for semiconductor device
|
|
KR102763079B1
(ko)
|
2015-10-23 |
2025-02-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
모듈 및 전자 기기
|
|
JP2017102904A
(ja)
|
2015-10-23 |
2017-06-08 |
株式会社半導体エネルギー研究所 |
半導体装置および電子機器
|
|
US10007161B2
(en)
|
2015-10-26 |
2018-06-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
|
SG10201608814YA
(en)
|
2015-10-29 |
2017-05-30 |
Semiconductor Energy Lab Co Ltd |
Semiconductor device and method for manufacturing the semiconductor device
|
|
US9773787B2
(en)
|
2015-11-03 |
2017-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
|
|
US9741400B2
(en)
|
2015-11-05 |
2017-08-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
|
|
JP6796461B2
(ja)
|
2015-11-18 |
2020-12-09 |
株式会社半導体エネルギー研究所 |
半導体装置、コンピュータ及び電子機器
|
|
JP2018032839A
(ja)
|
2015-12-11 |
2018-03-01 |
株式会社半導体エネルギー研究所 |
トランジスタ、回路、半導体装置、表示装置および電子機器
|
|
JP6887243B2
(ja)
|
2015-12-11 |
2021-06-16 |
株式会社半導体エネルギー研究所 |
トランジスタ、半導体装置、電子機器及び半導ウエハ
|
|
US10050152B2
(en)
|
2015-12-16 |
2018-08-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, semiconductor device, and electronic device
|
|
US10177142B2
(en)
|
2015-12-25 |
2019-01-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Circuit, logic circuit, processor, electronic component, and electronic device
|
|
KR102595042B1
(ko)
|
2015-12-28 |
2023-10-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치를 포함하는 표시 장치
|
|
CN108473334B
(zh)
|
2015-12-29 |
2021-03-12 |
株式会社半导体能源研究所 |
金属氧化物膜以及半导体装置
|
|
JP2017135698A
(ja)
|
2015-12-29 |
2017-08-03 |
株式会社半導体エネルギー研究所 |
半導体装置、コンピュータ及び電子機器
|
|
JP6851814B2
(ja)
|
2015-12-29 |
2021-03-31 |
株式会社半導体エネルギー研究所 |
トランジスタ
|
|
JP6827328B2
(ja)
|
2016-01-15 |
2021-02-10 |
株式会社半導体エネルギー研究所 |
半導体装置及び電子機器
|
|
KR102419913B1
(ko)
|
2016-01-18 |
2022-07-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
금속 산화물막, 반도체 장치, 및 표시 장치
|
|
US9905657B2
(en)
|
2016-01-20 |
2018-02-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
|
JP6822853B2
(ja)
|
2016-01-21 |
2021-01-27 |
株式会社半導体エネルギー研究所 |
記憶装置及び記憶装置の駆動方法
|
|
US10411013B2
(en)
|
2016-01-22 |
2019-09-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and memory device
|
|
US10700212B2
(en)
|
2016-01-28 |
2020-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof
|
|
US10115741B2
(en)
|
2016-02-05 |
2018-10-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
|
US10250247B2
(en)
|
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|
|
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(ko)
|
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|
|
JP6970511B2
(ja)
|
2016-02-12 |
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トランジスタ
|
|
US9954003B2
(en)
|
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|
|
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(ko)
|
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|
|
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(en)
|
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|
|
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(en)
|
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|
|
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(ja)
|
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|
|
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(en)
|
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|
|
US10096720B2
(en)
|
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|
|
US10236875B2
(en)
|
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|
|
WO2017178923A1
(en)
|
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|
|
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(ko)
|
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|
|
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(ko)
|
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|
|
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(ko)
|
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|
|
JP6933359B2
(ja)
*
|
2017-04-21 |
2021-09-08 |
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|