KR20060079262A - 발광 변환 소자를 포함하는 발광 반도체 소자 - Google Patents
발광 변환 소자를 포함하는 발광 반도체 소자 Download PDFInfo
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- KR20060079262A KR20060079262A KR1020067012234A KR20067012234A KR20060079262A KR 20060079262 A KR20060079262 A KR 20060079262A KR 1020067012234 A KR1020067012234 A KR 1020067012234A KR 20067012234 A KR20067012234 A KR 20067012234A KR 20060079262 A KR20060079262 A KR 20060079262A
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- light emitting
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- semiconductor device
- conversion element
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- KEUGBOBKFGXIOJ-UHFFFAOYSA-N CC1(CC2)C=C2CC1 Chemical compound CC1(CC2)C=C2CC1 KEUGBOBKFGXIOJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (30)
- 반도체 소자의 작동 중에 전자기 광선을 방출하는 반도체 바디(1), 상기 반도체 바디(1)와 도전 접속된 적어도 하나의 제 1 전기 단자 및 적어도 하나의 제 2 전기 단자(2, 3), 그리고 적어도 하나의 발광 물질을 포함하는 발광 변환 소자를 구비한, 발광 반도체 소자로서,상기 반도체 바디(1)는, 반도체 소자의 작동 중에 제 1 파장 범위의 전자기 광선을 방출하기에 적합한 반도체 연속층(7)을 포함하며,상기 발광 변환 소자는, 상기 반도체 소자가 제 1 파장 범위의 가시 전자기 광선 및 제 2 파장 범위의 가시 전자기 광선을 포함하는 혼색 광선을 방출하도록, 상기 제 1 파장 범위로부터 유래하는 광선을 상기 제 1 파장 범위와 상이한 제 2 파장 범위의 광선으로 변환시키며,상기 반도체 바디로부터 방출되는 광선은 청색 스펙트럼 영역에서 상대적인 최대 세기를 갖고, 상기 발광 변환 소자에 의해 스펙트럼상 선택적으로 흡수되는 파장 범위는 상기 최대 세기 밖에 있는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항에 있어서,상기 발광 변환 소자는, 상기 반도체 소자가 제 1 파장 범위의 가시 전자기 광선 및 제 2 파장 범위의 가시 전자기 광선을 방출하는 혼색 광선을 방출하도록, 상기 제 1 파장 범위의 광선을 서로 상이한 스펙트럼 부분 영역으로부터 유래하는 다수의 제 2 파장 범위의 광선으로 변환시키는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 발광 변환 소자는 상기 반도체 소자의 주(主) 발광 방향으로 볼 때 상기 반도체 바디(1) 뒤에 배치되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,발광 변환 소자로서 적어도 하나의 발광 변환층(4)이 상기 반도체 바디(1) 위에 또는 상에 제공되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 반도체 바디(1)의 적어도 한 부분 및 상기 전기 단자(2, 3)의 부분 영역들을 둘러싸는 하나의 발광 변환 커버링(5)이 발광 변환 소자로서 제공되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 제 2 파장 범위가 적어도 부분적으로는 상기 제 1 파장 범위보다 더 큰 파장(λ)을 갖는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항에 있어서,상기 혼색 광선의 제 1 파장 범위 및 제 2 파장 범위가 적어도 부분적으로는 상호 보색 스펙트럼 영역에 있음으로써, 백색광이 발생되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 2 항에 있어서,상기 반도체 소자의 작동 중에 상기 반도체 소자로부터 백색광이 방출되도록, 상기 반도체 바디로부터 방출되는 제 1 파장 범위 및 2개의 제 2 파장 범위가 부가적인 삼원색광(color triad)을 형성하는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 반도체 바디(1)로부터 방출된 광선은 420 nm 내지 460 nm 파장의 청색 스펙트럼 범위에서 발광-최대 세기를 갖는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 반도체 바디(1)는 베이스 하우징(8)의 리세스(9) 내에 배치되며,상기 리세스(9)에는 발광 변환 층(4)을 포함하는 커버층이 제공되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 반도체 바디(1)는 베이스 하우징(8)의 리세스(9) 내에 배치되며,상기 리세스(9)는 발광 변환 소자에 의해 적어도 부분적으로 충진되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 발광 변환 소자는 상이한 파장 변환 특성을 갖는 다수의 층을 포함하는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 발광 변환 소자(4, 5)가 적어도 하나의 무기 발광 물질(6)을 포함하는 것을 특징으로 하는, 발광 반도체 소자.
- 제 13 항에 있어서,상기 무기 발광 물질이 희토류로 도핑된 가넷(garnet), 희토류로 도핑된 알칼리토금속 황화물, 희토류로 도핑된 티오갈레이트, 희토류로 도핑된 알루미네이트, 및 희토류로 도핑된 오르토실리케이트로 이루어진 그룹으로부터 선택되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 14 항에 있어서,상기 무기 발광 물질이 Ce-도핑된 가넷 그룹으로부터 선택되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 14 항에 있어서,상기 무기 발광 물질이 YAG:Ce인 것을 특징으로 하는, 발광 반도체 소자.
- 제 14 항에 있어서,상기 무기 발광 물질이 에폭시수지 및 아크릴레이트수지와 같은 열가소성 재료 또는 열경화성 재료로 이루어지는 매트릭스 내에 매립되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 14 항에 있어서,상기 무기 발광 물질이 저용융 무기 유리로 이루어진 매트릭스 내에 매립되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 14 항에 있어서,상기 무기 발광 물질이 실리콘 재료로 이루어진 매트릭스 내에 매립되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 14 항에 있어서,상기 무기 발광 물질이 상기 반도체 바디(1) 상에 직접 제공되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 14 항에 있어서,상기 무기 발광 물질이 10 ㎛의 평균 입자 크기를 갖는 것을 특징으로 하는, 발광 반도체 소자.
- 제 19 항에 있어서,상기 무기 발광 물질이 10 ㎛의 평균 입자 크기를 갖는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 발광 변환 소자에 다수의 다양한 유기 발광 물질, 또는 무기 발광 물질, 또는 유기 발광 물질 및 무기 발광 물질이 제공되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 발광 변환 소자가 파장 변환 작용을 하는 유기 염료 분자, 또는 무기 염료 분자, 또는 유기 염료 분자 및 무기 염료 분자를 포함하고, 또한 상기 발광 변환 소자가 파장 변환 작용을 하지 않는 유기 염료 분자, 또는 무기 염료 분자, 또는 유기 염료 분자 및 무기 염료 분자를 포함하는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 발광 변환 소자, 또는 추가로 제공된 투과성 커버링(10, 15), 또는 발광 변환 소자 및 추가로 제공된 투과성 커버링이 빛을 산란시키는 입자를 포함하는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 발광 변환 소자에 하나 또는 다수의 발광하는 4f-유기 금속 화합물이 제공되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 있어서,상기 발광 변환 소자, 또는 투과성 커버링(10, 15), 또는 발광 변환 소자 및 투과성 커버링(10, 15)에 청색에서 발광하는 적어도 하나의 발광 물질이 제공되는 것을 특징으로 하는, 발광 반도체 소자.
- 제 1 항 또는 제 2 항에 따른 다수의 발광 반도체 소자를 구비한 LED-디스플레이 장치.
- 제 1 항 또는 제 2 항에 따른 다수의 발광 반도체 소자를 구비한 조명 장치.
- 제 1 항 또는 제 2 항에 따른 적어도 하나의 발광 반도체 소자를 구비한 액정 표시기의 조명.
Applications Claiming Priority (5)
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DE19625622A DE19625622A1 (de) | 1996-06-26 | 1996-06-26 | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE19625622.4 | 1996-06-26 | ||
DE19638667A DE19638667C2 (de) | 1996-09-20 | 1996-09-20 | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE19638667.5 | 1996-09-20 | ||
KR1020047019069A KR100734122B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
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KR1020047019069A Division KR100734122B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
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KR20060079262A true KR20060079262A (ko) | 2006-07-05 |
KR100808749B1 KR100808749B1 (ko) | 2008-02-29 |
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KR1020057009021A KR20050053798A (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020067012234A KR100808749B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020047019066A KR100662956B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1019980710985A KR100537349B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020057009020A KR100629544B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR20047019071A KR20040111701A (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020047019069A KR100734122B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020047019068A KR100662955B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020047019070A KR100702740B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020067012235A KR100751692B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020047019067A KR100643442B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
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KR1020047019066A KR100662956B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1019980710985A KR100537349B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020057009020A KR100629544B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR20047019071A KR20040111701A (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020047019069A KR100734122B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020047019068A KR100662955B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020047019070A KR100702740B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020067012235A KR100751692B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
KR1020047019067A KR100643442B1 (ko) | 1996-06-26 | 1997-06-26 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
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US (10) | US7078732B1 (ko) |
EP (12) | EP2282354B1 (ko) |
JP (10) | JP3773541B2 (ko) |
KR (11) | KR20050053798A (ko) |
CN (3) | CN1264228C (ko) |
BR (2) | BR9709998B1 (ko) |
DE (6) | DE29724848U1 (ko) |
HK (1) | HK1022564A1 (ko) |
WO (1) | WO1997050132A1 (ko) |
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2014133242A1 (ko) | 2013-02-28 | 2014-09-04 | 아이탑스오토모티브 주식회사 | 보행자 보호를 위한 화약식 후드 리프팅 모듈 및 이를 이용한 자동차 |
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