JP5209177B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP5209177B2 JP5209177B2 JP2005328786A JP2005328786A JP5209177B2 JP 5209177 B2 JP5209177 B2 JP 5209177B2 JP 2005328786 A JP2005328786 A JP 2005328786A JP 2005328786 A JP2005328786 A JP 2005328786A JP 5209177 B2 JP5209177 B2 JP 5209177B2
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- 239000004065 semiconductor Substances 0.000 title claims description 93
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims description 87
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 49
- 230000005855 radiation Effects 0.000 claims description 14
- 230000017525 heat dissipation Effects 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000009434 installation Methods 0.000 claims description 2
- 238000011900 installation process Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 40
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 24
- 238000007747 plating Methods 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000020169 heat generation Effects 0.000 description 8
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
101,201 基板
102,202 発光素子
103,203 カバー
104,204 蛍光体膜
105,205 リフレクタ
106,108,109,111,206,208 バンプ
106A,109A,108A,111A,206A,208A 接続層
209,210 接合層
Claims (7)
- 基板に発光素子が実装されてなる半導体装置であって、
前記発光素子上には光透過性の平板状のカバーが設置され、
前記カバーには蛍光体膜が形成され、
前記基板には、前記発光素子を実装する凹部が形成され、該凹部の周囲に位置する前記基板の上面が前記カバーと接合されることで前記凹部の底面に実装された前記発光素子が封止される構造であり、
前記発光素子が封止された前記基板の凹部内の空間に、金属部材の表面に反射膜が形成されてなり前記発光素子の発光を反射するリフレクタが、前記凹部の側壁から離間した状態で前記凹部の底面の前記発光素子の周囲に第1バンプを介して設置され、
前記凹部の底面から前記基板を貫通するように形成されたビアプラグからなり、第2バンプを介して前記発光素子と電気的に接続された貫通配線を有し、
前記貫通配線の外側に前記凹部の底面から前記基板を貫通するように形成されたビアプラグからなり、前記第1バンプを介して前記リフレクタと熱的に接続された放熱配線を有することを特徴とする半導体装置。 - 前記カバーと前記凹部の周囲とが直接接触し、陽極接合により接合されていることを特徴とする請求項1記載の半導体装置。
- 前記基板はSiよりなることを特徴とする請求項1または2記載の半導体装置。
- 前記基板の表面には酸化膜が形成されていることを特徴とする請求項1乃至3のうち、いずれか1項記載の半導体装置。
- 前記発光素子はLEDよりなることを特徴とする請求項1乃至4のうち、いずれか1項記載の半導体装置。
- 基板に発光素子を実装する凹部を形成する凹部形成工程と、
前記基板に前記基板を貫通する貫通電極を形成する貫通電極形成工程と、
前記凹部の底面に発光素子を実装する発光素子実装工程と、
前記凹部内に、金属部材の表面に反射膜が形成されてなり前記発光素子の発光を反射するリフレクタを、前記凹部の側壁から離間した状態で前記凹部の底面の前記発光素子の周囲に第1バンプを介して設置するリフレクタ設置工程と、
前記凹部の周囲を光透過性の平板状のカバーと接合し、前記発光素子を封止する封止工程と、を有し、
前記カバーには蛍光体膜が形成されており、
前記貫通電極は、ビアプラグからなる貫通配線、及びビアプラグからなる放熱配線を含み、
前記貫通電極形成工程は、前記基板を貫通するように、第2バンプを介して前記発光素子と電気的に接続される貫通配線を形成する工程と、
前記貫通配線の外側に前記基板を貫通するように、前記第1バンプを介して前記リフレクタと熱的に接続される放熱配線を形成する工程と、を含むことを特徴とする半導体装置の製造方法。 - 前記凹部形成工程と前記貫通電極形成工程との間に、前記基板の表面に酸化膜を形成する酸化膜形成工程を更に有し、
前記貫通電極形成工程と前記発光素子実装工程との間に、前記凹部の周囲の表面に形成された前記酸化膜を除去する酸化膜除去工程を更に有し、
前記発光素子実装工程では、前記貫通電極と電気的に接続されるように前記発光素子を実装し、
前記リフレクタ設置工程では、前記貫通電極と電気的に接続されるように前記リフレクタを設置し、
前記封止工程では、前記カバーと前記凹部の周囲の表面とを直接接触させ、陽極接合により接合することを特徴とする請求項6記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005328786A JP5209177B2 (ja) | 2005-11-14 | 2005-11-14 | 半導体装置および半導体装置の製造方法 |
US11/598,030 US7750358B2 (en) | 2005-11-14 | 2006-11-13 | Semiconductor device and manufacturing method of semiconductor device |
TW095141885A TW200746457A (en) | 2005-11-14 | 2006-11-13 | Semiconductor device and manufacturing method of semiconductor device |
EP06023685A EP1786043A1 (en) | 2005-11-14 | 2006-11-14 | Semiconductor device and manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005328786A JP5209177B2 (ja) | 2005-11-14 | 2005-11-14 | 半導体装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007134645A JP2007134645A (ja) | 2007-05-31 |
JP5209177B2 true JP5209177B2 (ja) | 2013-06-12 |
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JP2005328786A Active JP5209177B2 (ja) | 2005-11-14 | 2005-11-14 | 半導体装置および半導体装置の製造方法 |
Country Status (4)
Country | Link |
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US (1) | US7750358B2 (ja) |
EP (1) | EP1786043A1 (ja) |
JP (1) | JP5209177B2 (ja) |
TW (1) | TW200746457A (ja) |
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-
2005
- 2005-11-14 JP JP2005328786A patent/JP5209177B2/ja active Active
-
2006
- 2006-11-13 TW TW095141885A patent/TW200746457A/zh unknown
- 2006-11-13 US US11/598,030 patent/US7750358B2/en active Active
- 2006-11-14 EP EP06023685A patent/EP1786043A1/en not_active Withdrawn
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Publication number | Publication date |
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JP2007134645A (ja) | 2007-05-31 |
EP1786043A1 (en) | 2007-05-16 |
TW200746457A (en) | 2007-12-16 |
US20070108461A1 (en) | 2007-05-17 |
US7750358B2 (en) | 2010-07-06 |
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