JP2012238830A - 発光ダイオード素子 - Google Patents
発光ダイオード素子 Download PDFInfo
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- JP2012238830A JP2012238830A JP2011277977A JP2011277977A JP2012238830A JP 2012238830 A JP2012238830 A JP 2012238830A JP 2011277977 A JP2011277977 A JP 2011277977A JP 2011277977 A JP2011277977 A JP 2011277977A JP 2012238830 A JP2012238830 A JP 2012238830A
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- lead frame
- emitting diode
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- 239000000057 synthetic resin Substances 0.000 claims abstract description 67
- 230000005855 radiation Effects 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 25
- 230000000994 depressogenic effect Effects 0.000 claims description 18
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 238000001579 optical reflectometry Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 5
- 229910052688 Gadolinium Inorganic materials 0.000 description 4
- 229920000106 Liquid crystal polymer Polymers 0.000 description 4
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 4
- 239000004954 Polyphthalamide Substances 0.000 description 4
- 229920006375 polyphtalamide Polymers 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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Abstract
【解決手段】本発明による発光ダイオード素子は、陰極リードフレーム10、前記陰極リードフレーム10と電気的に絶縁される状態で配置される陽極リードフレーム20、前記陰極リードフレーム10および前記陽極リードフレーム20に電気的に接続される発光ダイオードチップ30、前記発光ダイオードチップ30を収容する陥没部41を含み、前記陰極リードフレーム10と前記陽極リードフレーム20を固定する合成樹脂部材40、および前記陥没部41の内面の少なくとも一部を囲み、前記合成樹脂部材40の上面を覆うように延びる金属性放熱反射部材50を含む。
【選択図】 図4
Description
12:陰極リード
20:陽極リードフレーム
22:陽極リード
30:発光ダイオードチップ
40:合成樹脂部材
50:金属性放熱反射部材
60:レンズ
100:安着部
200:傾斜反射面
Claims (24)
- 陰極リードフレーム、
前記陰極リードフレームと電気的に絶縁される状態で配置される陽極リードフレーム、
前記陰極リードフレームおよび前記陽極リードフレームに電気的に接続される発光ダイオードチップ、
前記発光ダイオードチップを収容する陥没部を含み、前記陰極リードフレームと前記陽極リードフレームを固定する合成樹脂部材、および
前記陥没部の内面の少なくとも一部を囲み、前記合成樹脂部材の上面を覆うように延びる金属性放熱反射部材
を含む、発光ダイオード素子。 - 前記金属性放熱反射部材は、前記発光ダイオードチップで発散された光が反射される反射空間を形成するように前記陥没部の内面の少なくとも一部を囲む反射部、および前記反射部で延びて前記合成樹脂部材の上面を覆うように形成される放熱部を含む、請求項1に記載の発光ダイオード素子。
- 前記金属性放熱反射部材の放熱部は、前記合成樹脂部材の上面で前記合成樹脂部材の側面をすぎて底面まで延びるように形成される、請求項2に記載の発光ダイオード素子。
- 前記金属性放熱反射部材の放熱部は、前記陰極リードフレームおよび前記陽極リードフレームのうちのいずれか一つに接触するように形成される、請求項3に記載の発光ダイオード素子。
- 前記発光ダイオードチップは、前記陰極リードフレームおよび前記陽極リードフレームのうちのいずれか一つに設置され、
前記金属性放熱反射部材の放熱部は、前記陰極リードフレームおよび前記陽極リードフレームのうちの前記発光ダイオードチップが設置されているものに接触するように形成される、請求項4に記載の発光ダイオード素子。 - 前記陰極リードフレームと前記陽極リードフレームは、前記合成樹脂部材の底面まで延びる陰極リードと陽極リードをそれぞれ含み、
前記金属性放熱反射部材の放熱部は、前記陰極リードおよび前記陽極リードのうちのいずれか一つに接触するように形成される、請求項3に記載の発光ダイオード素子。 - 前記発光ダイオードチップは、前記陰極リードフレームおよび前記陽極リードフレームのうちのいずれか一つに設置され、
前記金属性放熱反射部材の放熱部は、前記陰極リードフレームおよび前記陽極リードフレームのうちの前記発光ダイオードチップが設置されているものに接触するように前記陰極リードおよび前記陽極リードのうちのいずれか一つに接触するように形成される、請求項6に記載の発光ダイオード素子。 - 前記金属性放熱反射部材の放熱部は、前記陰極リードフレームおよび前記陽極リードフレームのうちのいずれか一つに接触するように形成される、請求項2に記載の発光ダイオード素子。
- 前記発光ダイオードチップは、前記陰極リードフレームおよび前記陽極リードフレームのうちのいずれか一つに設置され、
前記金属性放熱反射部材の放熱部は、前記陰極リードフレームおよび前記陽極リードフレームのうちの前記発光ダイオードチップが設置されているものに接触するように形成される、請求項8に記載の発光ダイオード素子。 - 前記金属性放熱反射部材の反射部は、前記陥没部の内面の上部を囲むように形成され、
前記陥没部の内面の下部は、前記発光ダイオードチップで発散された光を反射することができるように反射面で形成される、請求項2に記載の発光ダイオード素子。 - 前記金属性放熱反射部材の反射部は、前記合成樹脂部材により前記陰極リードフレームおよび前記陽極リードフレームの上面から離隔される、請求項10に記載の発光ダイオード素子。
- 前記反射空間は、蛍光体が含有されたエポキシ樹脂またはシリコン樹脂で満たされる、請求項2に記載の発光ダイオード素子。
- 前記金属性放熱反射部材の反射部の表面は、光反射率を高める金属で塗布される、請求項2に記載の発光ダイオード素子。
- 前記反射空間は、空いて空気層が形成されるようにし、
前記反射空間の上面を覆うように前記金属性放熱反射部材の上面に設置され、蛍光体層を備えるレンズをさらに含む、請求項2に記載の発光ダイオード素子。 - 前記金属性放熱反射部材の反射部の表面は、蛍光体で塗布される、請求項14に記載の発光ダイオード素子。
- 前記レンズは、上方向に凸の曲面形態を有する、請求項14に記載の発光ダイオード素子。
- 前記レンズは、平坦な形態を有する、請求項14に記載の発光ダイオード素子。
- 前記金属性放熱反射部材は、前記陰極リードフレームと前記陽極リードフレームにより構成され、
前記陰極リードフレームと前記陽極リードフレームは、前記発光ダイオードチップが安着される安着部、および前記発光ダイオードチップで発散された光を反射することができるように前記安着部から上方外側に傾いて形成される傾斜反射面を形成して前記金属性放熱反射部材を構成する、請求項1に記載の発光ダイオード素子。 - 前記合成樹脂部材は、前記安着部の下面が露出しないように前記安着部の下面を囲むように形成される、請求項18に記載の発光ダイオード素子。
- 前記合成樹脂部材は、前記安着部の下面の少なくとも一部が露出するように形成される、請求項18に記載の発光ダイオード素子。
- 前記傾斜反射面は、傾斜角度が互いに異なる複数の傾斜反射面を含む、請求項18に記載の発光ダイオード素子。
- 前記傾斜反射面は、前記合成樹脂部材の上面まで形成され、
前記陰極リードフレームと前記陽極リードフレームは、前記合成樹脂部材の上面を覆うように形成されるアップセット部を含む、請求項18に記載の発光ダイオード素子。 - 前記陰極リードフレームと前記陽極リードフレームの上面は、平坦に形成される、請求項18に記載の発光ダイオード素子。
- 前記傾斜反射面は、円形または多角形形態を有する、請求項18に記載の発光ダイオード素子。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110043271A KR101053937B1 (ko) | 2011-05-09 | 2011-05-09 | 발광다이오드 소자 |
KR10-2011-0043271 | 2011-05-09 | ||
KR10-2011-0076503 | 2011-08-01 | ||
KR1020110076503A KR101226554B1 (ko) | 2011-08-01 | 2011-08-01 | 발광다이오드 소자 |
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Publication Number | Publication Date |
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JP2012238830A true JP2012238830A (ja) | 2012-12-06 |
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JP2011277977A Pending JP2012238830A (ja) | 2011-05-09 | 2011-12-20 | 発光ダイオード素子 |
Country Status (4)
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US (1) | US8648374B2 (ja) |
EP (1) | EP2523229A3 (ja) |
JP (1) | JP2012238830A (ja) |
CN (1) | CN102779934B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020092156A (ja) * | 2018-12-05 | 2020-06-11 | 株式会社ダイセル | 光半導体装置 |
JP2021106184A (ja) * | 2019-12-26 | 2021-07-26 | 日亜化学工業株式会社 | 発光装置 |
JP7512012B2 (ja) | 2018-12-05 | 2024-07-08 | 株式会社ダイセル | 光半導体装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8917010B2 (en) * | 2012-02-02 | 2014-12-23 | Citizen Electronics Co., Ltd. | Lighting device including phosphor layer and light-transmitting layer that is arranged in contact with the phosphor layer to release static charge to substrate |
JP6490932B2 (ja) * | 2013-09-16 | 2019-03-27 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
TWI543413B (zh) * | 2013-11-20 | 2016-07-21 | 隆達電子股份有限公司 | 發光二極體封裝支架及發光二極體封裝結構 |
JP6318844B2 (ja) | 2014-05-20 | 2018-05-09 | 日亜化学工業株式会社 | 発光装置 |
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Also Published As
Publication number | Publication date |
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CN102779934B (zh) | 2014-12-31 |
CN102779934A (zh) | 2012-11-14 |
US20120286310A1 (en) | 2012-11-15 |
EP2523229A2 (en) | 2012-11-14 |
EP2523229A3 (en) | 2012-12-19 |
US8648374B2 (en) | 2014-02-11 |
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